DE102021202174A1 - Power module, in particular for an inverter for electric machines - Google Patents

Abstract

The invention relates to a power module (1), in particular for an inverter for electrical machines, having a circuit carrier (10) and a plurality of semiconductor switches, with a plurality of first conductor structures (11), a plurality of second conductor structures (12), a third Conductor structure (13), several first contact structures (12.2) connected to the second conductor structures (12) and several second contact structures (13.2) connected to the third conductor structure (13) are formed, wherein the first conductor structures (11) and the second conductor structures (12 ) are arranged alternately in a first area of the first circuit carrier (10), and the third conductor structure (13) is arranged on an opposite second area of the first circuit carrier (10), the first conductor structures (11) each being between two second conductor structures (12 ) are arranged, with several first semiconductor switches (HS1 to HS6) via high-current lines ( 18) are connected to the second contact structures (13.2) and distributed to the first conductor structures (11), with several second semiconductor switches (LS1 to LS6) being connected to the first contact structures (12.2) via high-current lines (18) and being mounted on the third conductor structure (13 ) are arranged, the third conductor structure (13) having constrictions (13.3) which connect the third conductor structure (13) to the second contact structures (13.2), the constrictions (13.3) being formed at a crossing region (17) at which the third conductor structure (13) separates the second conductor structures (12) or the second conductor structures (12) separate the second contact structures (13.2) from the third conductor structure (13).

Description

The invention relates to a power module which can be used in particular in an inverter for electric machines. In addition, the invention relates to a three-phase AC converter for an electric machine with at least one such power module.

From the DE 10 2014 219 998 B4 a power module is known, in particular for providing a phase current for an electric motor. The power module includes a circuit carrier with a surface, at least two first contact areas on the surface and at least two first power transistors, each having a ground contact area. In each case a first power transistor of the at least two first power transistors is arranged directly on one of the first contact areas and is electrically conductively connected directly to the respective first contact area via its bottom contact area. In addition, the power module includes a second contact area on the surface and at least two second power transistors, each of which has a bottom contact area. The at least two second power transistors are arranged directly on the second contact surface and are electrically conductively connected directly to the second contact surface via their respective bottom contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, the at least two second power transistors each having a further contact surface on their sides facing away from the surface of the circuit carrier and one second power transistor of the at least two second power transistors each having a further contact surface one of the at least two third contact surfaces is electrically conductively connected. The at least two first contact areas and the at least two third contact areas are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact area is arranged next to the at least two first contact areas and the at least two third contact areas, with the second contact area having at least two contact areas, with one of the at least two contact areas is located next to one of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and each first power transistor of the at least two first power transistors is connected via its further contact surface to the one contact region of the at least two contact regions located next to it second contact area electrically conductively connected. In this case, the at least two contact regions of the second contact area and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

From the JP 2020-53622 A a power module is known which comprises a circuit carrier and power semiconductor switching elements which are arranged on the circuit carrier. The power module forms an inverter circuit, which includes a high-side path formed by a positive supply terminal, an AC terminal, and a high-side switch group, and a low-side path formed by a negative supply terminal, the AC terminal, and a low-side switch group is formed. The high-side switch group and the low-side switch group are switched alternately. At one end of the circuit carrier, busbars are provided for the direct current supply of conductor structures, which are arranged on an insulating substrate. In this case, a first busbar forms the positive supply connection, a second busbar forms the negative supply connection and a third busbar forms the AC connection. The conductor patterns and their contact pads for DC power, which are electrically connected to the corresponding bus bars, have a configuration in which a plurality of positive contact pads, each connected to a positive conductor pattern, and a plurality of negative contact pads, each connected to a negative conductor pattern are provided side by side in the X-direction along an end edge of the circuit carrier. In this case, the positive contact surfaces are each arranged between two negative contact surfaces, and at least one negative contact surface is arranged between two positive contact surfaces. An AC conductor structure is arranged on an opposite end edge of the circuit carrier and is connected to the third busbar via an AC contact area. The high-side switch group includes two semiconductor switches which are each arranged on the positive conductor structure and are connected to the AC conductor structure via bonding wires. The low-side switch group includes two semiconductor switches, each of which is arranged on its own conductor structure and is connected to one of the negative conductor structures via bonding wires. The conductor structures on which the two semiconductor switches of the low-side switch group are arranged are electrically connected to the AC conductor structure via bonding wires.

Disclosure of Invention

The power module with the features of independent patent claim 1 has the advantage that a current flow through the first semiconductor switch and the second semiconductor switch is brought together at the bottlenecks and then distributed evenly again. This leads to feedback which advantageously ensures that the semiconductor switch chips are loaded in an evenly distributed manner. The bottlenecks ensure that, if there is a fault among the second semiconductor switches, one of the first semiconductor switches arranged opposite can be prevented from burning out. If, for example, one of the second semiconductor switches had a short circuit so that a high current could flow through its chip, without the bottlenecks an asymmetrically high current would flow through one of the intact first semiconductor switches whose chip is arranged opposite the chip of the defective second semiconductor switch . Furthermore, the effects of component tolerances due to the bottlenecks at the crossing area are reduced. This in turn affects the performance of the components and ensures that the components age at the same rate.

Embodiments of the present invention provide a power module, in particular for an inverter for electric machines, which comprises a first circuit carrier and an even number of semiconductor switches arranged on the first circuit carrier. The first circuit carrier has an insulating surface. On this surface are several first conductor structures, which are or can be contacted via a first busbar with a positive supply connection, several second conductor structures, which are or can be contacted via a second busbar with a negative supply connection, a third conductor structure, which is connected via a third Conductor rail is contacted or contactable with a load terminal, a plurality of first contact structures which are electrically connected to the second conductor structures, and a plurality of second contact structures which are electrically connected to the third conductor structure. The first conductor structures and the second conductor structures are arranged alternately in a first area of the first circuit carrier, and the third conductor structure is arranged on an opposite second area of the first circuit carrier, the first conductor structures each being arranged between two second conductor structures. A number of first semiconductor switches are looped in electrically in parallel between the positive supply connection and the load connection and are connected to the second contact structures of the third conductor structure via high-current lines and distributed to the first conductor structures. An equal number of second semiconductor switches are looped in electrically in parallel between the negative supply terminal and the load terminal and are connected to the first contact structures of the second conductor structures via high-current lines and are arranged on the third conductor structure in such a way that the second semiconductor switches face the first semiconductor switches. In this case, the first contact structures and the second contact structures are arranged parallel to one another between the first semiconductor switches and the second semiconductor switches, the third conductor structure having constrictions which connect the third conductor structure to the second contact structures. The bottlenecks are formed at an intersection area at which the third conductor structure separates the second conductor structures and/or the second conductor structures separate the second contact structures from the third conductor structure.

In addition, an AC converter for an electrical AC machine is proposed, which is looped in between a DC voltage supply and the AC machine and includes at least one such power module. The AC converter can preferably be designed as a B6 three-phase AC converter for a three-phase motor and can include three power modules.

Stray inductances and EMC emissions can be significantly reduced by embodiments of the power module according to the invention in comparison with power module layouts known from the prior art. Since forward paths or first current paths and return paths or second current paths of the current run on the same side of the circuit carrier of the power module and spatially next to each other and flow in the same direction, the leakage inductance of the power module itself can be further reduced. This becomes clear from the current commutation between the first semiconductor switches and the second semiconductor switches. A current flow in the first current paths through the first semiconductor switches commutes to a current flow in the second current paths through the second semiconductor switches. The reduction in the current flow in the first current paths leads to an increase in the current flow in the second current paths. Since the currents in the first current path and in the second current path flow in the same direction on the same surface of the circuit carrier, this means that the magnetic field does not change and the leakage inductance is therefore greatly reduced. This enables the use of semiconductors with high switching frequencies.

Advantageous improvements of the power module specified in independent patent claim 1 and of the AC converter specified in independent patent claim 14 for an electrical AC machine are possible as a result of the measures and developments listed in the dependent claims.

It is particularly advantageous that a layout of the first circuit carrier can be mirror-symmetrical to a central axis. As a result, a symmetrical distribution of the current flow on the circuit carrier can be achieved.

In an advantageous embodiment of the power module, the bottlenecks can be designed as conductor structures, which separate the corresponding second conductor structures. In this case, the second conductor structures separated in the crossing area can be connected to one another via bonding wires which span the constrictions designed as conductor structures. Alternatively, the bottlenecks can each be in the form of bonding wires, which connect the corresponding second contact structures to the third conductor structure and span the interconnected second conductor structures in the crossing area. In addition, constrictions designed both as conductor structures and as bonding wires can be present. Due to the crossing of the first current path and the second current path in the crossing area, the forward path and the return path of the current are spatially almost on top of each other on the circuit carrier, which in turn further reduces the leakage inductance of the module.

In a further advantageous refinement of the power module, the conductor structures can each be contacted via contact surfaces with the corresponding busbar. Contact resistance can be reduced thanks to the flat connection to the busbars.

In a further advantageous configuration of the power module, first contact areas of the first conductor structures and second contact areas of the second conductor structures can be arranged alternately on a first edge of the first circuit carrier, and a third contact area of the third conductor structure can be arranged on an opposite second edge of the first circuit carrier. As a result, the first busbar for connecting the power module to the positive first supply connection and the second busbar for connecting the power module to the negative second supply connection can be placed on one and the same side of the circuit carrier, so that an enclosed area and thus also the leakage inductance of the busbar supply are reduced can become. In addition, it can be achieved that the busbars for connecting the conductor structures to the supply terminals of the DC voltage supply can be arranged one above the other.

In a further advantageous embodiment of the power module, the first busbar for contacting the first conductor structures and the second busbar for contacting the second conductor structures can be arranged spatially one above the other in two parallel planes in order to further reduce the enclosed area and thus also the leakage inductance of the busbar supply.

In a further advantageous configuration of the power module, a second circuit carrier, on which a driver circuit for the semiconductor switches is arranged, can be arranged spatially above the first circuit carrier. In this case, control connections of the semiconductor switches can be electrically contacted with the second circuit carrier via control lines. A control connection can be understood, for example, as a gate connection or a Kelvin source connection of a field effect transistor or a base connection of a bipolar transistor.

In a further advantageous configuration of the power module, the second semiconductor switches can be arranged rotated by 180° with respect to the first semiconductor switches. This means that the second power connections of the second semiconductor switches face the second power connections of the first semiconductor switches. As a result, the same current direction on the circuit carrier of the power module can be implemented easily in the first current path or forward path and in the second current path or return path.

In a further advantageous configuration of the power module, an even number of first semiconductor switches can be distributed over the first conductor structures and an equal even number of second semiconductor switches can be arranged opposite the first semiconductor switches on the third conductor structure. This enables the symmetrical layout of the first circuit carrier to be realized in a particularly simple manner.

In a further advantageous configuration of the power module, a second contact structure connected to the third conductor structure can be present for each of the first conductor structures. As a result, first semiconductor switches arranged on the corresponding conductor structure can be contacted with a common second contact structure. Alternatively, first semiconductor switches arranged on the corresponding conductor structure can be contacted with different second contact structures.

In a particularly advantageous exemplary embodiment of the power module, three second conductor structures and two first conductor structures can be arranged alternately in the first region of the first circuit carrier, so that the three second conductor structures laterally frame the two first conductor structures. In this case, a length of the third conductor structure in the second region of the first circuit carrier can be selected such that it corresponds to the length of the first and second conductor structures arranged next to one another. As a result, a layout with a particularly low leakage inductance can be implemented.

Embodiments of the invention are shown in the drawings and are explained in more detail in the following description. In the drawings, the same reference symbols denote components or elements that perform the same or analogous functions.

character list

• 1 shows a schematic circuit diagram of a first switching state of an exemplary embodiment of an AC converter according to the invention for an alternating current machine, with three power modules according to the invention.
• 2 shows a schematic circuit diagram of the AC converter according to the invention for an electrical AC machine 1 in a second switching state.
• 3 shows a schematic representation of a layout of a first embodiment of the power module according to the invention 1 and 2 with a first exemplary embodiment of a first circuit carrier.
• 4 shows a schematic representation of a layout of a second embodiment of the power module according to the invention 1 and 2 with a second exemplary embodiment of the first circuit carrier.
• 5 shows a schematic representation of a layout of a third exemplary embodiment of the first circuit carrier for a power module according to the invention.
• 6 shows a schematic representation of a layout of a fourth exemplary embodiment of the first circuit carrier for a power module according to the invention.

Embodiments of the invention

How out 1 and 2 As can be seen, the illustrated exemplary embodiment of an AC converter 100 according to the invention for an electrical AC machine 40 is looped in between a DC voltage supply U Bat and the AC machine 40 . In the illustrated embodiment, the AC converter 100 is designed as a B6 three-phase AC converter 100A for a three-phase motor 40A and includes three power modules 1. The three power modules 1 are each designed as half-bridges and are connected to a positive first supply connection T+ and a negative second supply connection T- of the DC voltage supply UBat . In this case, a first half-bridge provides a first phase U for the three-phase motor 40A at its load connection PH. A second half-bridge provides a second phase V for the three-phase motor 40A at its load connection PH. A third half-bridge provides a third phase W for the three-phase motor 40A at its load connection PH. How out 1 and 2 As can further be seen, the three-phase motor 40A comprises three inductances Lu, Lv, Lw, which act as loads for the corresponding power modules 1, respectively. A first inductor Lu acts as a load for the first half bridge and the first phase U. A second inductor Lv acts as a load for the second half bridge and the second phase V. A third inductor Lw acts as a load for the third half bridge and the third phase W. To smooth the output voltage of the DC voltage supply UBat, an intermediate circuit capacitor C is arranged in parallel with the DC voltage supply UBat, which comprises a capacitor in the exemplary embodiment shown.

How out 3 and 4 As can further be seen, the power module 1, 1A, 1B in the exemplary embodiments shown comprises a first circuit carrier 10, 10A, 10B and an even number of semiconductor switches LS1 to LS6, HS1 to HS6, which are arranged on the first circuit carrier 10, 10A, 10B is. The first circuit carrier 10, 10A, 10B has an insulating surface 10.1. On the surface 10.1 are several first conductor structures 11, 11A, 11B, which are contacted via a first busbar 3 with a positive supply connection T+, several second conductor structures 12, 12A, 12B, 12C, which are each connected via a second busbar 5 with a negative supply connection T- are contacted, a third conductor structure 13, which is contacted via a third busbar 7 with a load terminal PH, several first contact structures 12.2, which are electrically connected to the second conductor structures 12, 12A, 12B, 12C, and several second contact structures 13.2 are formed , which are electrically connected to the third conductor structure 13 . Here, the first conductor structures 11, 11A, 11B and the second conductor structures 12, 12A, 12B, 12C alternate in a first region of the first th circuit carrier 10, 10A, 10B is arranged, and the third conductor structure 13 is arranged on an opposite second region of the first circuit carrier 10, 10A, 10B. The first conductor structures 11, 11A, 11B are each arranged between two second conductor structures 12, 12A, 12B, 12C. In addition, an even number of first semiconductor switches HS1 to HS6 are looped in electrically in parallel between the positive supply connection T+ and the load connection PH and are connected to the second contact structures 13.2 of the third conductor structure 13 via high-current lines 18 and distributed to the first conductor structures 11, 11A, 11B. An equal number of second semiconductor switches LS1 to LS6 is looped in electrically in parallel between the negative supply connection T and the load connection PH and is connected via high-current lines 18 to the first contact structures 12.2 of the second conductor structures 12, 12A, 12B, 12C and so to the third conductor structure 13 arranged so that the second semiconductor switches LS1 to LS6 face the first semiconductor switches HS1 to HS6. The first contact structures 12.2 and the second contact structures 13.2 are arranged parallel to one another between the first semiconductor switches HS1 to HS6 and the second semiconductor switches LS1 to LS6. In this case, the third conductor structure 13 has constrictions 13.3, which connect the third conductor structure 13 to the second contact structures 13.2. The bottlenecks 13.3 are formed at a crossing area 17, at which the third conductor structure 13 separates the second conductor structures 12, 12A, 12B, 12C or the second conductor structures 12, 12A, 12B, 12C separate the second contact structures 13.2 from the third conductor structure 13.

How out 3 and 4 It can also be seen that in the illustrated exemplary embodiments of the power module 1, 1A, 1B, three second conductor structures 12A, 12B, 12C and two first conductor structures 11A, 11B are arranged alternately in the first region of the first circuit carrier 10A, 10B, which is the lower region in the illustration. so that the three second conductor structures 12A, 12B, 12C frame the two first conductor structures 11A, 11B laterally. A length of the third conductor structure 13 in the second region of the first circuit carrier 10A, 10B, which is at the top in the illustration, is selected such that it corresponds to the length of the first and second conductor structures 11A, 11B, 12A, 12B, 12C arranged next to one another.

How out 3 and 4 As can further be seen, the power modules 1, 1A, 1B in the illustrated exemplary embodiments each include six first semiconductor switches HS1 to HS6, which are in the 1 and 2 The alternating converter 100 shown are each combined to form a high-side switch HS_U, HS_V, HS_W, and six second semiconductor switches LS1 to LS6 which are in the in 1 and 2 illustrated inverter 100 are each combined to form a low-side switch LS_U, LS_V, LS_W. In addition, the six first semiconductor switches HS1 to HS6 are divided into two high-side switch groups 15, 15A, 15B. Three first semiconductor switches HS1, HS2, HS3 of a first high-side switch group 15A are arranged on a first conductor structure 11A, which is on the left in the illustration. Three further first semiconductor switches HS4, HS5, HS6 of a second high-side switch group 15B are arranged on a second first conductor structure 11B, which is on the right in the illustration. Furthermore, the six second semiconductor switches LS1 to LS6 are divided into two low-side switch groups 14, 14A, 14B and spaced apart from one another and correlating with the six first semiconductor switches HS1 to HS6 of the two high-side switch groups 15, 15A, 15B on the third conductor structure 13 arranged. Here, three second semiconductor switches LS1, LS2, LS3 of a first low-side switch group 14A are arranged opposite the three first semiconductor switches HS1, HS2, HS3 of the first high-side switch group 15A in the illustration on the left on the third conductor structure 13, and three further second semiconductor switches LS4, LS5, LS6 of a second low-side switch group 14B are arranged opposite the three first semiconductor switches HS4, HS5, HS6 of the second high-side switch group 15B in the illustration on the right on the third conductor structure 13. As a result, a first contact structure 12.2, on the left in the illustration, and a first second contact structure 13.2, on the left in the illustration, are parallel to one another between the first semiconductor switches HS1 to HS3 of the first high-side switch group 15A and the second semiconductor switches LS1 to LS3 of the first low -Side switch group 14A arranged. In addition, a second first contact structure 12.2, on the right in the illustration, and a second contact structure 13.2, on the right in the illustration, are parallel to one another between the first semiconductor switches HS4 to HS6 of the second high-side switch group 15B and the second semiconductor switches LS4 to LS6 of the second low -side switch group 14B arranged.

How out 5 and 6 It can also be seen that in the illustrated third and fourth exemplary embodiment of the first circuit carrier 10C, 10D, four second conductor structures 12A, 12B, 12C, 12D and three first conductor structures 11A, 11B, 11C alternate in the first region of the first circuit carrier, which is the lower region in the illustration 10C, 10D arranged so that the four second conductor structures 12A, 12B, 12C, 12D frame the three first conductor structures 11A, 11B, 11C laterally. A length of the third conductor structure 13 in the second region of the first circuit carrier 10C, 10D, which is at the top in the illustration, is selected such that it corresponds to the length of the first and two, which are arranged next to one another th conductor structures 11A, 11B, 11C, 12A, 12B, 12C, 12D.

How out 5 and 6 can further be seen, in the illustrated exemplary embodiments, the first circuit carriers 10C, 10D are analogous to those in 3 and 4 illustrated embodiments of the first circuit carrier 10A, 10B each have an even number of semiconductor switches LS1 to LS5, HS1 to HS5. In contrast to the first and second exemplary embodiment of the first circuit carrier 10A, 10B, the 5 and 6 illustrated exemplary embodiments of the first circuit carrier 10C, 10D each have an odd number of five first semiconductor switches HS1 to HS5, which each form a high-side switch HS_U, HS_V, HS_W of the in 1 and 2 illustrated changeover converter are combined, and an odd number of five second semiconductor switches LS1 to HL5, which each form a low-side switch LS_U, LS_V, LS_W of the in 1 and 2 illustrated converter are summarized. In addition, the five first semiconductor switches HS1 to HS5 are divided into three high-side switch groups 15, 15A, 15B, 15C. Two first semiconductor switches HS1, HS2 of a first high-side switch group 15A are arranged on a first conductor structure 11A, which is on the left in the illustration. Another first semiconductor switch HS3 of a second high-side switch group 15B is arranged on a second conductor structure 11B, which is in the middle in the illustration. Two further first semiconductor switches HS4, HS5 of a third high-side switch group 15C are arranged on a third, first conductor structure 11C on the right in the illustration. Furthermore, the five second semiconductor switches LS1 to LS5 are divided into three low-side switch groups 14, 14A, 14B, 14C and are arranged on the third conductor structure 13 at a distance from one another. In this case, two second semiconductor switches LS1, LS2 of a first low-side switch group 14A are arranged opposite the first high-side switch group 15A in the illustration on the left on the third conductor structure 13, and a further second semiconductor switch LS3 of a second low-side switch group 14B is arranged opposite the second high-side switch group 15B in the center of the third conductor structure 13 in the illustration, and two further second semiconductor switches LS4, LS5 of a third low-side switch group 14C are opposite the third high-side switch group 15B arranged on the third conductor structure 13 on the right in the illustration. As a result, a first contact structure 12.2, on the left in the illustration, and a first second contact structure 13.2, on the left in the illustration, are parallel to one another between the first semiconductor switches HS1, HS2 of the first high-side switch group 15A and the second semiconductor switches LS1, LS2 of the first low -Side switch group 14A arranged. Furthermore, a second first contact structure 12.2, middle in the illustration, and a second second contact structure 13.2, middle in the illustration, are parallel to one another between the first semiconductor switch HS3 of the second high-side switch group 15B and the second semiconductor switch LS3 of the second low-side switch Switch group 14B arranged. In addition, a third first contact structure 12.2, on the right in the illustration, and a third second contact structure 13.2, on the right in the illustration, are parallel to one another between the first semiconductor switches HS4, HS5 of the third high-side switch group 15C and the second semiconductor switches LS4, LS5 of the third low -Side switch group 14C arranged.

As already explained above, the individual power modules 1, 1A, 1B in the illustrated exemplary embodiments preferably form a half-bridge, with the first semiconductor switches HS1 to HS6 or HS1 to HS5 of the high-side switch groups 15 forming the half-bridge, and the second semiconductor switches LS1 to LS6 and LS1 to LS5 form the low-side switch groups 14 of the half-bridge, which are each driven alternately. This means that the second semiconductor switches LS1 to LS6 or LS1 to LS5 are turned off when the first semiconductor switches HS1 to HS6 or HS1 to HS5 are turned on and vice versa. In addition, first power connections of the first semiconductor switches HS1 to HS6 or HS1 to HS5 are electrically conductively connected to the corresponding first conductor structures 11, 11A, 11B, 11C and second power connections of the first semiconductor switches HS1 to HS6 or HS1 to HS5 are connected via the high-current lines 18, which are preferably embodied as bonding wires 18A, are electrically connected to the second contact structures 13.2 of the third conductor structure 13. Furthermore, first power terminals of the second semiconductor switches LS1 to LS6 or LS1 to LS5 are electrically conductively connected to the third conductor structure 13 and second power terminals of the second semiconductor switches LS1 to LS6 or LS1 to LS5 are electrically connected to the first contact structures 12.2 of the second conductor structure 12, 12A, 12B, 12C, 12D connected. The semiconductor switches HS1 to HS6 or HS1 to HS5, LS1 to LS6 or LS1 to LS5 are each designed as field effect transistors in the illustrated exemplary embodiments of the first circuit carrier 10A, 10B, 10C, 10D, so that drain connections of the semiconductor switches HS1 to HS6 or HS1 to HS5, LS1 to LS6 or LS1 to LS5 correspond to the first power connections. Source connections of the semiconductor switches HS1 to HS6 or HS1 to HS5, LS1 to LS6 or LS1 to LS5 correspond to the second power connections. When using bipolar transistors as semiconductor switches, the collector connections correspond to the first power connections and Emitter terminals the second power terminals of the semiconductor switch.

How out 3 until 6 It can also be seen that the conductor structures 11, 12, 13 in the illustrated exemplary embodiments of the first circuit carrier 10A, 10B, 10C, 10D are in contact with the corresponding busbar 3, 5, 7 via contact surfaces 11.1, 12.1, 13.1. At the in 3 and 4 In the illustrated exemplary embodiments, the first conductor structure 11A, on the left in the illustration, is connected to the first busbar 3 via a first contact surface 11.1A, on the left in the illustration. The second first conductor structure 11B, on the right in the illustration, is connected to the first busbar 3 via a second first contact area 11.1B, on the right in the illustration. In addition, the first, second conductor structure 12A, on the left in the illustration, is connected to the second busbar 5 via a first, second contact surface 12.1A, on the left in the illustration. The second conductor structure 12B, which is in the middle in the illustration, is connected to the second busbar 5 via a second contact area 12.1B, in the middle in the illustration. The third, second conductor structure 12C, on the right in the illustration, is connected to the second busbar 5 via a third, second contact area 12.1B, on the right in the illustration. The third conductor structure 13A is connected to the third busbar 7 via a centrally arranged third contact area 13.1. At the in 5 and 6 In the illustrated exemplary embodiments, the first conductor structure 11A, on the left in the illustration, is connected to the first busbar 3 via a first contact surface 11.1A, on the left in the illustration. The second first conductor structure 11B, which is in the middle in the illustration, is connected to the first busbar 3 via a second first contact area 11.1B, in the middle in the illustration. The third first conductor structure 11C, on the right in the illustration, is connected to the first busbar 3 via a third first contact area 11.IC, on the right in the illustration. In addition, the first, second conductor structure 12A, on the left in the illustration, is connected to the second busbar 5 via a first, second contact surface 12.1A, on the left in the illustration. The second conductor structure 12B, which is arranged between the left-hand first conductor structure 11A and the middle first conductor structure 11B in the illustration, is connected to the second busbar 5 via a second second contact area 12.1B.

The third second conductor structure 12C, which is arranged between the first conductor structure 11B in the middle and the first conductor structure 11C on the right in the illustration, is connected to the second busbar 5 via a third, second contact area 12.1C. The fourth second conductor structure 12D, on the right in the illustration, is connected to the second busbar 5 via a fourth second contact area 12.1D, on the right in the illustration. The third conductor structure 13A is connected to the third busbar 7 via a centrally arranged third contact area 13.1.

How out 3 until 6 It can further be seen that the first contact surfaces 11.1A, 11.1B, 11.1C of the first conductor structures 11A, 11B, 11C and the second contact surfaces 12.1A, 12.1B, 12.1C, 12.1D of the second conductor structures 12A, 12B, 12C, 12D alternate arranged on a first edge of the first circuit carrier 10, 10A, 10B, 10C, 10D, which is the lower edge in the illustration, and the third contact surface 13.1 of the third conductor structure 13 is on an opposite second edge, here the upper edge, of the first circuit carrier 10, 10A, 10B, 10C, 10D arranged. Furthermore, the first busbar 3 for contacting the first conductor structures 11A, 11B, 11C and the second busbar 5 for contacting the second conductor structures 12A, 12B, 12C, 12D are arranged spatially one above the other in two parallel planes. This results in a smaller area A1 enclosed by the two busbars 3, 5 than if the two busbars 3, 5 were arranged on opposite edges of the first circuit carrier 10, 10A, 10B, 10C, 10D.

How out 3 and 4 It can also be seen that a second circuit carrier 16, on which driver circuits (not shown in detail) for the semiconductor switches HS1 to HS6, LS1 to LS6 are arranged, is spatially arranged above the first circuit carrier 10. In this case, control connections of the semiconductor switches HS1 to HS6, LS1 to LS6 are electrically contacted to the second circuit carrier 16 via control lines 19, the control lines 19 preferably being in the form of bonding wires 19A. In addition, a temperature sensor 16.1 is arranged on the second circuit carrier 16 in order to measure the temperature in the power module 1, 1A, 1B. In the illustrated exemplary embodiments of the power modules 1, 1A, 1B, the semiconductor switches HS1 to HS6, LS1 to LS6 are each designed as field effect transistors with a Kelvin source. Therefore, the gate connections and Kelvin source connections of the semiconductor switches HS1 to HS6, LS1 to LS6 are each connected to the driver circuits on the second circuit carrier 16 via one of the control lines 19 . In addition, the second semiconductor switches LS1 to LS6 are arranged rotated by 180° with respect to the first semiconductor switches HS1 to HS6. This means that the second power connections of the second semiconductor switches LS1 to LS6 face the second power connections of the first semiconductor switches HS1 to HS6.

Analog is for the in 5 and 6 illustrated embodiments of the first circuit carrier 10C, 10D also such a spatial above the first circuit carrier 10 arranged not shown second circuit carrier 16 is provided, on which driver circuits for the semiconductor switches HS1 to HS5, LS1 to LS5 are arranged. In this case, control connections of the semiconductor switches HS1 to HS5, LS1 to LS5 make electrical contact with the second circuit carrier 16 via control lines 19, the control lines 19 preferably being in the form of bonding wires 19A. The semiconductor switches HS1 to HS5, LS1 to LS5 are also each designed as field effect transistors with a Kelvin source. Therefore, gate connections and Kelvin source connections of the semiconductor switches HS1 to HS5, LS1 to LS6 are each connected to the driver circuits on the second circuit carrier 16 via one of the control lines 19 . In addition, the second semiconductor switches LS1 to LS5 are arranged rotated by 180° with respect to the first semiconductor switches HS1 to HS5. This means that the second power connections of the second semiconductor switches LS1 to LS5 face the second power connections of the first semiconductor switches HS1 to HS5.

How out 3 It can also be seen that the bottlenecks 13.3 in the illustrated first exemplary embodiment of the first circuit carrier 10A are designed as conductor structures 13.3A, which separate the corresponding second conductor structures 12A, 12B, 12C from one another. A conductor structure 13.3A on the left in the illustration connects the third conductor structure 13 with the second contact structure 3.2 on the left in the illustration and a conductor structure 13.3A on the right in the illustration connects the third conductor structure 13 with the second contact structure 13.2 on the right in the illustration. The three second conductor structures 12A, 12B, 12C separated in the crossing area 17 are connected to one another via bonding wires 17A, which span the constrictions 13.3 designed as conductor structures 13.3A. How out 3 As can further be seen, first bonding wires 17A, only one of which is shown, connect the first, second conductor structure 12A on the left in the representation with the third, second conductor structure 12C on the right in the representation, and thereby span the two conductor structures 13.3A of the bottlenecks 13.3. Furthermore, second bonding wires 17A, only one of which is shown, connect the first, second conductor structure 12A on the left in the representation, to the second conductor structure 12B, in the middle in the representation, and thereby span the left of the two conductor structures 13.3A of the bottlenecks 13.3. In addition, third bonding wires 17A, only one of which is shown, connect the third, second conductor structure 12C on the right in the representation with the second conductor structure 12B, in the middle in the representation, and thereby span the right of the two conductor structures 13.3A of the bottlenecks 13.3.

How out 4 As can also be seen, the interconnected second conductor structures 12, 12A, 12B, 12C in the illustrated second exemplary embodiment of the first circuit carrier 10B separate the second contact structures 13.2 from the third conductor structure 13. The bottlenecks 13.3 are therefore each designed as bonding wires 13.3B, which connect the second contact structures 13.2 to the third conductor structure 13 and span the interconnected second conductor structures 12, 12A, 12B, 12C in the crossing region 17. In this case, several bonding wires 13.3B on the left in the illustration, of which two are shown, connect the second contact structure 13.2 on the left in the illustration with the third conductor structure 13. In addition, several bonding wires 13.3B on the right in the illustration, of which two are shown, connect the ones in the representation on the right second contact structure 13.2 with the third conductor structure 13.

How out 5 It can also be seen that the constrictions 13.3 between the third conductor structure 13 and the left and right second contact structure 13.2 are designed as conductor structures 13.3A in the illustrated third exemplary embodiment of the first circuit carrier 10C, which separate the left second conductor structure 12A and the right second conductor structure 12D from the middle separate second conductor structures 12B, 12C. A conductor structure 13.3A on the left in the illustration connects the third conductor structure 13 with the second contact structure 13.2 on the left in the illustration and a conductor structure 13.3A on the right in the illustration connects the third conductor structure 13 with the second contact structure 3.2 on the right in the illustration. The three second conductor structures 12A, 12B, 12C, 12D separated in the crossing region 17 are connected to one another via bonding wires 17A, which span the constrictions 13.3 designed as conductor structures 13.3A. How out 5 As can also be seen, first bonding wires 17A, only one of which is shown, connect the first, second conductor structure 12A, on the left in the representation, with the fourth, second conductor structure 12, on the right in the representation, and thereby span the two conductor structures 13.3A of the constrictions 13.3 and the two middle second conductor structures 12B, 12C. Furthermore, second bonding wires 17A, only one of which is shown, connect the first conductor structure 12A, which is on the left in the illustration, to the second second conductor structure 12B, and thereby span the left of the two conductor structures 13.3A of the bottlenecks 13.3. In addition, third bonding wires 17A, only one of which is shown, connect the fourth, second conductor structure 12D on the right in the representation with the third second conductor structure 12C and thereby span the right of the two conductor structures 13.3A of the bottlenecks 13.3. In addition, the second and third conductor structures 12B, 12C are connected to one another and form a common first contact structure 12.2. How out 5 further As can be seen, the second second conductor structure 12B and the third second conductor structure 12C separate the middle second contact structure 13.2 from the third conductor structure 13. Two further constrictions 13.3 are therefore designed as bonding wires 13.3B, which connect the middle second contact structure 13.2 to the left second contact structure 13.2 or connect to the right second contact structure 13.2. In an alternative exemplary embodiment of the first circuit carrier 10, which is not shown, the central second contact structure 13.2 can be dispensed with. In this embodiment, the power connections of the first semiconductor switch HS3 arranged on the middle first conductor structure 11B are then contacted symmetrically via high-current lines 18 designed as bonding wires 18A with the left and right second contact structure 13.2.

How out 6 As can also be seen, the interconnected second conductor structures 12A, 12B, 12C, 12D in the illustrated fourth exemplary embodiment of the first circuit carrier 10D separate the second contact structures 13.2 from the third conductor structure 13. The bottlenecks 13.3 are therefore each designed as bonding wires 13.3B, which the corresponding connect the second contact structures 13.2 to the third conductor structure 13 and span the interconnected second conductor structures 12, 12A, 12B, 12C in the crossing region 17. In this case, several bonding wires 13.3B on the left in the illustration, of which two are shown, connect the second contact structure 13.2 on the left in the illustration with the third conductor structure 13. In addition, several bonding wires 13.3B on the right in the illustration, of which two are shown, connect the ones in the representation right second contact structure 13.2 with the third conductor structure 13. In addition, the middle second contact structure is connected via bonding wires 13.3B, one of which is shown, with the left second contact structure 13.2 or with the right second contact structure 13.2. In an alternative exemplary embodiment of the first circuit carrier 10, which is not shown, the central second contact structure 13.2 can be dispensed with. In this embodiment, the power connections of the first semiconductor switch HS3 arranged on the middle first conductor structure 11B are then contacted symmetrically via high-current lines 18 designed as bonding wires 18A with the left and right second contact structure 13.2.

What all illustrated exemplary embodiments of the first circuit carrier 10A, 10B, 10C, 10D have in common is a mirror-symmetrical structure of the layout with respect to a central axis MA. Of course, other suitable exemplary embodiments of the first circuit carrier 10A with a different number of semiconductor switches or first and second conductor structures 11, 12 are also conceivable, as long as the symmetry of the layout is retained.

How out 1 can also be seen, in the first switching state of the AC converter 100 shown, the high-side switch HS_U for the first phase U, the low-side switch LS_V for the second phase V and the high-side switch HS_W for the third phase W conductively driven. In addition, the low-side switch LS_U for the first phase U, the high-side switch HS_V for the second phase V and the low-side switch LS_W for the third phase W are turned off. This forms a first current path IP1 from the positive first supply connection T+ via the high-side switch HS_U for the first phase U, the first inductor Lu, the second inductor Lv and the low-side switch LS_V for the second phase V to the negative second supply connection T-. In addition, a second current path IP2 forms from the positive first supply connection T+ via the high-side switch HS_W for the third phase W, the third inductor Lw, the second inductor Lv and the low-side switch LS_V for the second phase V to the negative second supply connection T-. How out 2 It can also be seen that after the high-side switch HS_U for the first phase U has switched to the blocking state and the low-side switch LS_U for the first phase U has switched to the conducting state, the first current path IP1 is interrupted and it is created a third current path IP3, whose current flow commutes the current flow of the first current path IP1 and driven by the first inductor Lu via the second inductor Lv and the low-side switch LS_V for the second phase V and the low-side switch LS_V for the first Phase U runs back to the first inductor Lv. The second current path IP2 remains in the in 2 The second switching state shown is further closed and runs from the positive first supply connection T+ via the high-side switch HS_W for the third phase W, the third inductance Lw, the second inductance Lv and the low-side switch LS_V for the second phase V to the negative second supply connection T-. The current directions in the AC converter 100 can also reverse depending on the switching states of the semiconductor switches HS1 to HS6, LS1 to LS6, a previously impressed current or an operating mode (motor or generator) of the electrical machine. 1 and 2 show an example of switching from the high-side switch HS_U for the first phase U to the low-side switch LS_U for the first phase U. In 1 until 4 the first current path IP1 is represented by solid arrows, the second current path IP2 by dotted arrows and the third current path IP3 by dashed arrows, where in 3 and 4 only the first current path IP1 and the third current path IP3 are shown, which are relevant for the first phase U.

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent Literature Cited

• DE 102014219998 B4 [0002]
• JP2020053622A [0003]

Claims (15)

Power module (1), in particular for an inverter (100) for electric machines (40), with a first circuit carrier (10) and an even number of semiconductor switches (LS1 to LS6, HS1 to HS6), which are arranged on the first circuit carrier (10). is, wherein the first circuit carrier (10) has an insulating surface (10.1), wherein on the surface (10.1) a plurality of first conductor structures (11) which are contacted via a first busbar (3) with a positive supply connection (T+) or can be contacted are, a plurality of second conductor structures (12) which are each contacted or can be contacted via a second busbar (5) with a negative supply connection (T-), a third conductor structure (13) which is connected via a third busbar (7) with a load connection (PH) is contacted or contactable, a plurality of first contact structures (12.2), which are electrically connected to the second conductor structures (12), and a plurality of second contact structure structures (13.2) are formed, which are electrically connected to the third conductor structure (13), the first conductor structures (11) and the second conductor structures (12) being arranged alternately in a first region of the first circuit carrier (10), and the third Conductor structure (13) is arranged on an opposite, second area of the first circuit carrier (10), the first conductor structures (11) each being arranged between two second conductor structures (12), a number of first semiconductor switches (HS1 to HS6) being electrically connected in parallel between looped into the positive supply connection (T+) and the load connection (PH) and connected to the second contact structures (13.2) of the third conductor structure (13) via high-current lines (18) and distributed to the first conductor structures (11), with an equal number of second Semiconductor switches (LS1 to LS6) electrically in parallel between the negative supply terminal (T-) and the Lasta Connection (PH) is looped in and connected to the first contact structures (12.2) of the second conductor structures (12) via high-current lines (18) and is arranged on the third conductor structure (13) in such a way that the second semiconductor switches (LS1 to LS6) correspond to the first semiconductor switches ( HS1 to HS6), the first contact structures (12.2) and the second contact structures (13.2) being arranged parallel to one another between the first semiconductor switches (HS1 to HS6) and the second semiconductor switches (LS1 to LS6), the third conductor structure (13) Has constrictions (13.3) which connect the third conductor structure (13) to the second contact structures (13.2), the constrictions (13.3) being formed at a crossing area (17) at which the third conductor structure (13) connects the second conductor structures (12 ) separates and/or the second conductor structures (12) separate the second contact structures (13.2) from the third conductor structure (13). Power module (1) after claim 1 , characterized in that a layout of the first circuit carrier (10) is mirror-symmetrical to a central axis (MA). Power module (1) after claim 1 or 2 , characterized in that the bottlenecks (13.3) are designed as conductor structures (13.3A) which separate the corresponding second conductor structures (12). Power module (1) after claim 3 , characterized in that the second conductor structures (12) separated in the crossing region (17) are connected to one another via bonding wires (17A) which span the constrictions (13.3) designed as conductor structures (13.3A). Power module (1) according to one of Claims 1 until 4 , characterized in that the bottlenecks (13.3) are each designed as bonding wires (13.3B) which connect the corresponding second contact structures (13.2) to the third conductor structure (13) and the interconnected second conductor structures (12) in the crossing area (17) span. Power module (1) according to one of Claims 1 until 5 , characterized in that the conductor structures (11, 12, 13) are each contacted via contact surfaces (11.1, 12.1, 13.1) with the corresponding conductor rail (3, 5, 7). Power module (1) after claim 6 , characterized in that first contact surfaces (11.1) of the first conductor structures (11) and second contact surfaces (12.1) of the second conductor structures (12) are arranged alternately on a first edge of the first circuit carrier (10) and a third contact surface (13.1) of the third Conductor structure (13) is arranged on an opposite second edge of the first circuit carrier (10). Power module (1) according to one of Claims 1 until 7 , characterized in that the first busbar (3) for contacting the first conductor structures (11) and the second busbar (5) for contacting the second conductor structures (12) are arranged spatially one above the other in two parallel planes. Power module (1) according to one of Claims 1 until 8th , characterized in that a second circuit carrier (16), on which a driver circuit for the semiconductor switches (HS1 to HS6, LS1 to LS6) is arranged spatially above is arranged on the first circuit carrier (10), control connections of the semiconductor switches (HS1 to HS6, LS1 to LS6) being electrically contacted to the second circuit carrier (16) via control lines (19). Power module (1) according to one of Claims 1 until 9 , characterized in that the second semiconductor switches (LS1 to LS6) rotated by 180 ° to the first semiconductor switches (HS1 to HS6) are arranged. Power module (1) according to one of Claims 1 until 10 , characterized in that a number of first semiconductor switches (HS1 to HS6) is distributed on the first conductor structures (11) and an equal number of second semiconductor switches (LS1 to LS6) opposite the first semiconductor switches (HS1 to HS6) on the third conductor structure (13) is arranged. Power module (1) according to one of Claims 1 until 11 , characterized in that for each of the first conductor structures (11) there is a second contact structure (13.2) connected to the third conductor structure (13). Power module (1) according to one of Claims 1 until 12 , characterized in that three second conductor structures (12) and two first conductor structures (11) are arranged alternately in the first region of the first circuit carrier (10), so that the three second conductor structures (12) frame the two first conductor structures laterally, with a length of the third conductor structure (13) in the second region of the first circuit carrier (10) is selected such that it corresponds to the length of the first and second conductor structures (11, 12) arranged next to one another. AC converter (100) for an electrical AC machine (40), which is looped in between a DC voltage supply (UBat) and the AC machine and comprises at least one power module (1) which, according to one of Claims 1 until 13 is trained. AC converter (100) after Claim 14 , characterized in that the AC converter (100) is designed as a B6 three-phase AC converter (100A) for a three-phase motor (40A) and comprises three power modules (1).

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