DE102024106249A1 - FLUOR SUBSTANCE, OPTOELECTRONIC COMPONENT, METHOD FOR PRODUCING A FLUOR SUBSTANCE - Google Patents

Abstract

A phosphor (1) is specified with the general formula M121-r+s-1/2t-1/2v+yM114+r-s-1/3u-l/3w-ySi27-r-t-u-x+yAlr+t+u+x-yN54-s-v-w-xOs+v+w+x:A, where- M1 is an element or a combination of elements from the group of divalent elements,- M11 is an element or a combination of elements from the group of trivalent elements,- A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations from this, 2*(21−r+s−1/2t−1/2v+y)+3*(4+r−s−1/3u−1/3w−y)+4*(27−r−t−u−x+y)+3*(r+t+u+x−y)−3*(54−s−v−w−x)−2*(s+v+w+x)=0;−21≤−r +s−1/2t−1/2v+y≤0;−4≤r−s−1/3u−1/3w−y≤0;−27≤−r−t−u−x+y≤0;−54≤−s−v−w−x≤0;0≤r≤21;0≤s≤4;0≤t≤27;0≤u≤12;0≤v≤42;0≤w≤12;0≤x≤27; and0≤y≤4.Furthermore, an optoelectronic component (10) and a method for producing a phosphor (1) are specified.

Description

A phosphor and an optoelectronic component are specified. Furthermore, a method for producing a phosphor is specified.

One object is to provide a phosphor with increased efficiency. The phosphor enables phosphor solutions/applications with improved light quality at high irradiance. Further objects include a method for producing such a phosphor with increased efficiency and an optoelectronic component with increased efficiency at high irradiances.

A phosphor is specified. According to at least one embodiment, the phosphor has the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x : A, where: $$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le \text{0;}$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le \text{0;}$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le 27\text{;}$$ $$0\le \text{u}\le 12\text{;}$$ $$0\le \text{v}\le 42\text{;}$$ $$0\le \text{w}\le 12\text{;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le 4.$$

According to at least one embodiment of the phosphor, M ^I is an element or a combination of elements from the group of divalent elements. M ^I is, for example, an element selected from the group of alkaline earth elements.

The term "valence" in relation to a specific element refers to how many elements with a singly opposite charge are needed in a chemical compound to achieve charge balance. Thus, the term "valence" encompasses the element's charge number.

Elements with a valence of two are called divalent elements. Divalent elements are often doubly positively charged in chemical compounds and have a charge number of +2. Charge balancing in a chemical compound can occur, for example, via two other elements that are singly negatively charged or another element that is doubly negatively charged.

According to at least one embodiment, M ^II is an element or a combination of elements from the group of trivalent elements.

Trivalent elements are elements with a valence of three. Trivalent elements are often positively charged three times in chemical compounds and have a charge number of +3. The same in a chemical compound can, for example, take place via an element that is triply negatively charged or via three elements that are singly negatively charged.

In particular, M ^II is selected from the group of trivalent rare earth elements or combinations thereof. Rare earth elements include the chemical elements of the third subgroup of the periodic table as well as the lanthanides. Rare earth elements are generally selected from the group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.

According to at least one embodiment, A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof.

According to at least one embodiment of the phosphor, A is an activator element. The activator element modifies the electronic structure of the host lattice in that electromagnetic radiation is absorbed by the phosphor and excites an electronic transition in the activator element, which returns to the ground state while emitting electromagnetic radiation with an emission spectrum. The activator element, which is incorporated into the host lattice, is thus responsible for the wavelength-converting properties of the phosphor.

The term "wavelength-converting" in this context means that radiated electromagnetic radiation of a specific wavelength range—in this case, the excitation spectrum or first wavelength range—is converted into electromagnetic radiation of another, preferably longer wavelength range—in this case, the emission spectrum or second wavelength range. Typically, a wavelength-converting component absorbs electromagnetic radiation of an radiated wavelength range, converts it through electronic processes at the atomic and/or molecular level into electromagnetic radiation of another wavelength range, and re-emits the converted electromagnetic radiation. In particular, pure scattering or pure absorption is not understood as wavelength-converting in this context.

Here and below, phosphors are described using molecular formulas. The elements listed in the molecular formulas are present in a charged form. Here and below, elements and/or atoms in relation to the molecular formulas of the phosphors therefore refer to ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols, which are given without a charge number for the sake of clarity.

With the given molecular formulas, it is possible that the phosphor contains additional elements, for example, in the form of impurities. These impurities together amount to a maximum of 5 mol%, in particular a maximum of 1 mol%, preferably a maximum of 0.1 mol%.

The phosphor is generally uncharged on the outside. This means that there can be complete charge balance between positive and negative charges within the phosphor. However, it is also possible that the phosphor formally lacks complete charge balance to a small extent. Reasons for this include impurities, for example.

According to at least one embodiment, the phosphor comprises a mixture. The mixture comprises, for example, among other things, a compound having the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A. Further constituents of the mixture can be, for example, reactants that did not react during the production of the phosphor, impurities, and/or secondary phases that were formed during the reaction.

• - M^Iein Element oder eine Kombination von Elementen aus der Gruppe der zweiwertigen Elemente,
• - M^II ein Element oder eine Kombination von Elementen aus der Gruppe der dreiwertigen Elemente,
• - A ausgewählt ist aus Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er oder Kombinationen daraus,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le \text{12;}$$ $$0\le \text{v}\le 42\text{;}$$ $$0\le \text{w}\le \text{12;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le 4.$$ According to at least one embodiment, the phosphor has the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A, where

• - M ^{I is} an element or a combination of elements from the group of divalent elements,
• - M ^II an element or a combination of elements from the group of trivalent elements,
• - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le \text{12;}$$ $$0\le \text{v}\le 42\text{;}$$ $$0\le \text{w}\le \text{12;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le 4.$$

The M ^I and M ^II positions can each be occupied by the other element, and vice versa. Mixed occupancy by the two elements M ^I and M ^II is also conceivable. Exchange or mixed occupancy with aluminum is also conceivable for the silicon positions. Exchange or mixed occupancy with oxygen is also conceivable for the nitrogen positions.

According to at least one embodiment of the phosphor, $$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$\begin{array}{l}-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;-27\le -\\ \text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;0\le \text{r}\le 21;0\le \text{s}\le 4;0\le \\ \text{t}\le 27;0\le \text{u}\le 12;0\le \text{v}\le 42;0\le \text{w}\le 12;0\le \text{x}\le 27;\text{ und}\\ \text{0}\le \text{y}\le \text{4}\text{.}\end{array}$$

• - M^I ein Element oder eine Kombination von Elementen aus der Gruppe der zweiwertigen Elemente,
• - M^II ein Element oder eine Kombination von Elementen aus der Gruppe der dreiwertigen Elemente,
• - A ausgewählt ist aus Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er oder Kombinationen daraus,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-\text{y}\right)+4*\left(27-\text{r}-\text{x}+\text{y}\right)+3*\left(\text{r}+\text{x}+\text{y}\right)-3*(54-\\ \text{s}-\text{x})-2*\left(\text{s}+\text{x}\right)=0;\end{array}$$ $$0\le -\text{r}+\text{s}+\text{y}\le 4;$$ $$0\le \text{r}+\text{x}-\text{y}\le 27;$$ $$0\le \text{r}\le 21;$$ $$0\le \text{s}\le \text{4;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le \text{4}\text{.}$$ According to at least one embodiment, the phosphor has the formula M ^I _21-r+s+y M ^II _4+rsy Si _27-r-x+y Al _r+xy N _54-sx O _s+x :A, where

• - M ^{I is} an element or a combination of elements from the group of divalent elements,
• - M ^II an element or a combination of elements from the group of trivalent elements,
• - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-\text{y}\right)+4*\left(27-\text{r}-\text{x}+\text{y}\right)+3*\left(\text{r}+\text{x}+\text{y}\right)-3*(54-\\ \text{s}-\text{x})-2*\left(\text{s}+\text{x}\right)=0;\end{array}$$ $$0\le -\text{r}+\text{s}+\text{y}\le 4;$$ $$0\le \text{r}+\text{x}-\text{y}\le 27;$$ $$0\le \text{r}\le 21;$$ $$0\le \text{s}\le \text{4;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le \text{4}\text{.}$$

According to at least one embodiment, M ^I comprises calcium, strontium, barium, zinc, or combinations thereof. In particular, M ^I comprises calcium or strontium. For example, M ^I consists of calcium or strontium.

According to at least one embodiment, M ^II comprises lanthanum, lutetium, yttrium, or combinations thereof. Preferably, M ^II represents the element lutetium or yttrium.

According to at least one embodiment, A comprises cerium, europium, or combinations thereof. In particular, A consists of one of these elements. Cerium is present in particular in the form Ce ³⁺ , and europium in the form Eu ²⁺ . Preferably, A represents the element cerium.

According to at least one embodiment, A comprises or consists of cerium.

According to at least one embodiment, A comprises or consists of europium.

In Eu-activated phosphors ^{, quenching} occurs even at low irradiances of around 100 mW/mm², which can lead to a reduction in quantum efficiency. Quenching here and in the following refers to the presence of processes that lead to the absorption of a photon in the first wavelength range, but without the subsequent emission of a photon in the second wavelength range or emission spectrum. The photon in the first wavelength range does not trigger a transition in the visible spectral range, but is converted into lattice vibrations. This leads to a reduction in efficiency. Quenching can be caused, for example, by internal conversion or energy transfer, for example, to the host lattice. Conventional applications of phosphors sometimes operate at significantly higher irradiances than 100 mW/ ^mm² . Phosphors that contain ^Ce³³ as an activator element exhibit lower quenching even at higher irradiances. Therefore, the use of ^Ce³³ as activator element A is advantageous. An excited state of Ce ³⁺ has a typical lifetime of less than 100 nanoseconds. The typical lifetime of the excited state of Eu ²⁺ , in contrast, is usually in the range of 1 to 10 microseconds. Due to the shorter lifetime of the excited state of Ce, a phosphor with Ce as the activator element exhibits lower quenching at high irradiances. For example, the conventional phosphor Y ₃ Al ₅ O ₁₂ :Ce ³⁺ only shows significant radiation-induced quenching above an irradiance of 10 W/mm ^2. The use of the conventional phosphors Tb ₃ Al ₅ O ₁₂ :Ce ³⁺ (TbAG) or Gd ₃ Al ₅ O ₁₂ :Ce ³⁺ (GdAG) is also limited to low temperatures. By using longer-wavelength Ce ³⁺ -doped phosphors, less Eu ²⁺ -doped phosphor can be used for a CRI (color rendering index) of 70. This can improve quenching behavior at high irradiances.

According to at least one embodiment of the phosphor, A has a molecular fraction of between 0.01% and 15% inclusive, based on M ^I and M ^II . In other words, between 0.01% and 15% inclusive of the atomic positions of M ^I and M ^II are occupied by the element A. Preferably, A has a molecular fraction of between 0.01% and 10% inclusive, based on M ^I and M ^II . Particularly preferably, A has a molecular fraction of between 0.01% and 5% inclusive, based on M ^I and M ^II .

According to at least one embodiment, the phosphor has the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ , (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ , (Lu,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Lu,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Lu,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ or (Lu,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ . The phosphor preferably has the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ^{3+ ,} (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ , or (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ . The crystallographic layers for calcium/strontium and the crystallographic layers for yttrium/lutetium can each be occupied by the other element, and vice versa. Mixed occupation by the two elements Ca and Y is also conceivable. An exchange or mixed occupation with aluminum is also conceivable for the silicon positions. An exchange or mixed occupation with oxygen is also conceivable for the nitrogen positions.

According to at least one embodiment, the phosphor has the formula (Lu,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ or (Lu,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ . The calcium positions or strontium positions, as well as the lutetium positions, can each be occupied by the other element and vice versa. Likewise, a mixed occupation by the two elements Ca/Sr and Lu is conceivable. For the silicon positions, an exchange or a mixed occupation with aluminum is also conceivable. For the nitrogen positions, a Exchange or a mixed composition with oxygen is conceivable. A mixed composition with all three elements is also conceivable.

The phosphor preferentially converts electromagnetic radiation in the UV to blue wavelength range into electromagnetic radiation in the green to yellow-orange wavelength range.

According to at least one embodiment, the phosphor crystallizes in the orthorhombic space group Pna2 ₁ . In particular, the phosphor comprises a crystalline host lattice. The phosphor is, for example, a ceramic material.

The crystalline host lattice is typically composed of a three-dimensional, periodically repeating unit cell. In other words, the unit cell is the smallest recurring unit of the crystalline host lattice, reflecting the symmetry of the crystal. The elements M ^I , M ^II , Al, N, Si, O, and A each preferentially occupy specific, symmetrical sites, so-called atomic positions, within the three-dimensional unit cell of the host lattice.

To describe the three-dimensional unit cell of the crystalline host lattice, six lattice parameters are required: three lengths a, b, and c, and three angles α, β, and γ. The three lattice parameters a, b, and c are the lengths of the lattice vectors that span the unit cell. The other three lattice parameters α, β, and γ are the angles between these lattice vectors. α is the angle between b and c, β is the angle between a and c, and γ is the angle between a and b.

The lattice parameters of the length are, for example, a = 15.401(1) Å, b = 21.719(1) Å, and c = 15.384(1) Å. The three angles α, β, and γ are 90°, which corresponds to an orthorhombic cell. The volume of the unit cell is preferably 5146 Å ³ .

According to at least one embodiment, a unit cell of the phosphor has 424 atoms. In other words, the unit cell has 4 formula units, each with 106 atoms in the unit cell. M ^I , M ^II , Si, Al, N, and O atoms occupy the general Wyckoff position 4a. The Wyckoff position, or point position, classifies all points of the unit cell with respect to the symmetry elements of their space group. In each space group, the point positions are divided into general and special positions. All atoms are preferably located in a general position.

According to at least one embodiment, a crystal structure of the host lattice of the phosphor comprises corner-sharing (Si,Al)(O,N) ₄ tetrahedra. In particular, the crystal structure of the host lattice of the phosphor is a framework silicate or belongs to the group of framework silicates. For example, the crystal structure comprises exclusively corner-sharing (Si,Al)(O,N) ₄ tetrahedra.

The (Si,Al)(O,N) ₄ tetrahedra typically exhibit a tetrahedral vacancy. The tetrahedral vacancy is a region within the respective tetrahedron. For example, the term "tetrahedral vacancy" refers to the region within the tetrahedron that remains free when touching spheres are placed at the vertices of the tetrahedron.

Preferably, the O atoms and/or N atoms span the (Si,Al)(O,N) ₄ tetrahedron, with the Si and/or Al atom located in the tetrahedral gap of the (Si,Al)(O,N) ₄ tetrahedron spanned by the O and/or N atoms. In other words, the tetrahedra are centered around the Si,Al atom. In particular, all atoms spanning the tetrahedron have a similar distance from the Si,Al atom located in the tetrahedral gap.

Corner-sharing means that at least two of the (Si,Al)(O,N) ₄ tetrahedra are linked via an O,N vertex. The two (Si,Al)(O,N) ₄ tetrahedra are corner-sharing. Preferably, the O,N atom is a common O,N atom of the corner-sharing (Si,Al)(O,N) ₄ tetrahedra. In other words, the O,N atom that links the (Si,Al)(O,N) ₄ tetrahedra is preferably part of both the (Si,Al)(O,N) ₄ tetrahedron and at least one other (Si,Al)(O,N) ₄ tetrahedron. In the present phosphor, the nitrogen/oxygen ions are exclusively doubly bridging. In other words, the nitrogen/oxygen ions are part of two (Si,Al)(O,N) ₄ tetrahedra. The (Si,Al)(O,N) ₄ tetrahedra are connected via vertices to other (Si,Al)(O,N) ₄ tetrahedra. The vertex-sharing (Si,Al)(O,N) ₄ tetrahedra form a tetrahedral network.

According to at least one embodiment, the (Si,Al)(O,N) ₄ tetrahedra are linked to further (Si,Al)(O,N) ₄ tetrahedra via corners and form infinite six-single chains along the crystallographic a-axis. After every six (Si,Al)(O,N) ₄ tetrahedra, the orientation of the (Si,Al)(O,N) ₄ tetrahedra repeats. A tetrahedral layer preferably forms orthogonally to the c-axis. The six-single chains are linked to one another in particular via further (Si,Al)(O,N) ₄ tetrahedral corners and form corrugated layers in the ab-plane. For this purpose, two superimposed tetrahedral layers are considered along the crystallographic c-axis. The corrugated layers are particularly clearly visible in the representation viewed along the crystallographic c-axis.

According to at least one embodiment, the corrugated layers form rings of six corner-sharing (Si,Al)(O,N) ₄ tetrahedra as the main structural motif in the ab plane. The corrugated tetrahedral layers are then in turn interconnected via shared corners, thus forming a three-dimensional network. In particular, interconnected six-rings are formed both within the ab plane and within the bc plane.

According to at least one embodiment, the (Si,Al)(O,N) ₄ tetrahedra form channels containing at least one M ^I atom and/or one M ^II atom and/or one A atom. The cations yttrium, lutetium, strontium, and/or calcium are preferably present in the channels. The channels are formed along the crystallographic c-axis and the crystallographic a-axis.

According to at least one embodiment, the phosphor absorbs electromagnetic radiation in the near UV to blue spectral range.

According to at least one embodiment, the phosphor is excitable between 350 nanometers and 500 nanometers inclusive, preferably between 400 nm and 470 nm inclusive.

According to at least one embodiment of the phosphor, the phosphor emits electromagnetic radiation. The emitted electromagnetic radiation can be described in the form of an emission spectrum. The emission spectrum has an emission peak with an emission maximum that lies between 500 nanometers and 600 nanometers, preferably between 520 nanometers and 570 nanometers. For example, the emission maximum of the phosphor is between 540 nm and 555 nm when excited at 448 nm. The emission maximum of the phosphor is approximately 547 nm at an excitation wavelength of 448 nm.

The emission spectrum is the intensity distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the first wavelength range. The emission spectrum is typically represented in the form of a diagram in which a spectral intensity or spectral radiant flux per wavelength interval ("spectral intensity/spectral radiant flux") of the electromagnetic radiation emitted by the phosphor is plotted as a function of the wavelength λ. In other words, the emission spectrum represents a curve with the wavelength on the x-axis and the spectral intensity or spectral radiant flux on the y-axis.

According to at least one embodiment, a dominant wavelength (A _Dom ) of the electromagnetic radiation emitted by the phosphor is between 530 nm and 600 nm inclusive, preferably between 550 nm and 580 nm inclusive.

According to at least one embodiment, a dominant wavelength (λ _Dom ) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is between 560 nanometers and 575 nanometers inclusive. For example, at an excitation wavelength of 448 nm, the dominant wavelength is approximately 567 nm or 568 nm.

The dominant wavelength is advantageous in the green to yellow-orange wavelength range.

To determine the dominant wavelength of the electromagnetic radiation emitted by the phosphor, a straight line is drawn in the CIE standard diagram, starting from the white point and passing through the chromaticity coordinate of the electromagnetic radiation. The intersection point of the straight line with the spectral color line delimiting the CIE standard diagram denotes the dominant wavelength of the electromagnetic radiation. In other words, the dominant wavelength is the monochromatic wavelength that produces the same color impression as a polychromatic light source. The dominant wavelength is therefore the wavelength perceived by the human eye. Generally, the dominant wavelength differs from the wavelength of the emission maximum.

According to at least one preferred embodiment, the half-width of the electromagnetic radiation emitted by the phosphor is between 120 nm and 160 nm inclusive, preferably between 130 nm and 155 nm inclusive. Particularly preferably, the half-width of the electromagnetic radiation emitted by the phosphor ranges from 135 nm to 145 nm inclusive. For example, the half-width is approximately 138 nm or 145 nm.

The term half-width refers to a curve with a maximum, such as the emission spectrum, where the half-width is the width of the region on the x-axis corresponding to the two y-values that are half of the maximum.

Furthermore, an optoelectronic component is specified. The phosphor is particularly suitable and intended for use in an optoelectronic component. Features and embodiments that are implemented solely in connection with the phosphor and/or the method can also be implemented in the optoelectronic component, and vice versa.

According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a semiconductor chip which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface.

The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip.

The semiconductor chip preferably comprises an epitaxially grown semiconductor layer sequence with an active zone configured to generate electromagnetic radiation. For this purpose, the active zone comprises, for example, a pn junction, a double heterostructure, a single quantum well, or particularly preferably a multiple quantum well structure. During operation, the semiconductor chip preferably emits electromagnetic radiation from the ultraviolet spectral range and/or the visible spectral range, particularly preferably from the blue spectral range.

According to a further embodiment, the optoelectronic component comprises a conversion element with a phosphor described here, which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum. Preferably, the first wavelength range lies within the excitation spectrum of the phosphor. The phosphor completely or partially converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum.

For example, in addition to the phosphor described here, the conversion element comprises a matrix material in which the phosphor is embedded in the form of particles. The matrix material is preferably selected from the group of silicones, polysiloxanes, epoxies, glasses, and hybrid materials. For example, another phosphor is embedded in the matrix material.

The other phosphors are, for example, silicates, SiAlONs, oxynitrides, halides, garnet phosphors and/or nitride phosphors. The garnet phosphor is particularly preferably a YAG phosphor with the chemical formula Y ₃ Al ₅ O ₁₂ :Ce ³⁺ , a YAGaG phosphor with the chemical formula Y ₃ (Al, Ga) ₅ O ₁₂ :Ce ³⁺ or a LuAG phosphor with the chemical formula Lu ₃ Al ₅ O ₁₂ :Ce ³⁺ . The nitride phosphors preferentially convert blue primary radiation into red secondary radiation. The nitride phosphor can be, for example, an alkaline earth metal silicon nitride, an oxynitride, an aluminum oxynitride, a silicon nitride or a sialon. For example, the nitride phosphor is (Ca,Sr)AlSiN ₃ :Eu ²⁺ (SCASN). For example, the other phosphors are Y ₃ Al ₅ O ₁₂ :Ce ³⁺ and Lu ₃ Al ₅ O ₁₂ :Ce ³⁺ .

• Ce³⁺ dotierte Granate wie YAG, YAGaG und LuAG, beispielsweise (Y,Lu,Gd,Tb)₃ (Al_1-xGa_x)₅O₁₂:Ce³⁺; Eu²⁺ dotierte Nitride, beispielsweise (Ca,Sr)AlSiN₃:Eu²⁺, Sr(Ca,Sr)Si₂Al₂N₆:Eu²⁺ (SCASN), (Sr,Ca)AlSiN₃*Si₂N₂O:Eu²⁺, (Ca,Ba,Sr)₂Si₅N₈:Eu²⁺, SrLiAl₃N₄:Eu²⁺, SrLi₂Al₂O₂N₂:Eu²⁺; Ce³⁺ dotierte Nitride, beispielsweise (Ca,Sr)Al_(1-4x/3)Si_(1+x)N₃:Ce; (x = 0,2 - 0,5); Eu²⁺ dotierte Sulfide, (Ba,Sr,Ca)Si₂O₂N₂:Eu²⁺, SiAlONe, Nitrido-Orthosilikate (z.B. AE_2-x-aRE_xEu_aSi_1-yO_4-x-2yN_x), Orthosilikate (Ba,Sr,Ca)₂SiO₄:Eu²⁺; Chlorosilikate (z.B. Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺); Mn⁴⁺ dotierte Fluoride, beispielsweise (K,Na)₂(Si,Ti)F₆:Mn⁴⁺; Eu²⁺ bzw Ce³⁺ dotierte Litho-Silikate, wie (Li,Na,K,Rb,Cs) (Li₃SiO₄) :E mit E als Eu²⁺, Ce³⁺,bzw. (Sr,Li)Li₃AlO₄:Eu²⁺ oder SrLi₃AlO₄:Eu²⁺.

The other phosphors are particularly preferably selected from the following group:

• Ce ³⁺ doped garnets such as YAG, YAGaG and LuAG, for example (Y,Lu,Gd,Tb) ₃ (Al _1-x Ga _x ) ₅ O ₁₂ :Ce ³⁺ ; Eu ²⁺ doped nitrides, for example (Ca,Sr)AlSiN ₃ :Eu ²⁺ , Sr(Ca,Sr)Si ₂ Al ₂ N ₆ :Eu ²⁺ (SCASN), (Sr,Ca)AlSiN ₃ *Si ₂ N ₂ O:Eu ²⁺ , (Ca,Ba,Sr) ₂ Si ₅ N ₈ :Eu ²⁺ , SrLiAl ₃ N ₄ :Eu ²⁺ , SrLi ₂ Al ₂ O ₂ N ₂ :Eu ²⁺ ; Ce ³⁺ doped nitrides, for example (Ca,Sr)Al _(1-4x/3) Si _(1+x) N ₃ :Ce; (x = 0.2 - 0.5); Eu ²⁺ doped sulfides, (Ba,Sr,Ca)Si ₂ O ₂ N ₂ :Eu ²⁺ , SiAlONe, nitrido-orthosilicates (e.g. AE _2-xa RE _x Eu _a Si _1-y O _4-x-2y N _x ), orthosilicates (Ba,Sr,Ca) ₂ SiO ₄ :Eu ²⁺ ; Chlorosilicates (e.g. Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu ²⁺ ); Mn ⁴⁺ doped fluorides, for example (K,Na) ₂ (Si,Ti)F ₆ :Mn ⁴⁺ ; Eu ²⁺ or Ce ³⁺ doped litho-silicates, such as (Li,Na,K,Rb,Cs) (Li ₃ SiO ₄ ) :E with E as Eu ²⁺ , Ce ³⁺ , or (Sr,Li)Li ₃ AlO ₄ :Eu ²⁺ or SrLi ₃ AlO ₄ :Eu ²⁺ .

• (Ba_1-x-ySr_xCa_y) SiO₄:Eu²⁺ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba_1-x-ySr_xCa_y) ₃SiO₅:Eu²⁺ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li₂SrSiO₄: Eu²⁺, Oxo-Nitride wie (Ba_1-x-ySr_xCa_y) Si₂O₂N₂: Eu²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl₂O₃N₂:Eu²⁺, Ba_4-xCa_xSi₆ON₁₀:Eu²⁺ (0 ≤ x ≤ 1), (Ba_1-xSr_x) Y₂Si₂Al₂O₂N₅:Eu²⁺ (0 ≤ x ≤ 1), Sr_xSi_(6-y)Al_yO_yN_(8-y) : Eu²⁺ (0,05 ≤ x ≤ 0,5; 0,001 ≤ y ≤ 0,5), Ba₃Si₆O₁₂N₂:Eu²⁺, Si_6-zAl_zO_zN_8-z:Eu²⁺ (0 ≤ z ≤ 0,42), M_xSi_12-m-nAl_m+nO_nN_16-n:Eu²⁺ (M = Li, Mg, Ca, Y; x = m/v; v = Wertigkeit von M, x ≤ 2), M_xSi_12-m-nAl_m+nO_nN_16-n:Ce³⁺, AE_2-x-aRE_xEu_aSi_1-yO_4-x-2yN_x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetallelemente), AE_2-x-aRE_xEu_aSi_1-yO_4-x-2yN_x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetallelemente) , Ba₃Si₆O₁₂N₂:Eu²⁺ oder Nitride wie La_3-xY_xSi₆N₁₁:Ce³⁺, (Ba_1-x-ySr_xCa_y)₂Si₅N₈:Eu²⁺, (Ca_1-xSr_x)AlSiN₃:Eu²⁺ (0 ≤ x ≤ 1), Sr(Sr_1-xCa_x)Al₂Si₂N₆:Eu²⁺ (0 ≤ x ≤ 0,2), Sr(Sr_1-xCa_x)Al₂Si₂N₆:Ce³⁺ (0 ≤ x ≤ 0,2) SrAlSi₄N₇:Eu²⁺, (Ba_1-x-ySr_xCa_y) SiN₂:Eu²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba_1-x-ySr_xCa_y) SiN₂:Ce³⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Sr_1-xCa_x) LiAl₃N₄:Eu²⁺ (0 ≤ x ≤ 1), (Ba_1-x-ySr_xCa_y)Mg₂Al₂N₄:Eu²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba_1-x-ySr_xCa_y)Mg₃SiN₄:Eu²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1) .

Other possible materials for the phosphors are in particular the following aluminum-containing and/or silicon-containing phosphor particles:

• (Ba _1-xy Sr _x Ca _y ) SiO ₄ :Eu ²⁺ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba _1-xy Sr _x Ca _y ) ₃ SiO ₅ :Eu ²⁺ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li ₂ SrSiO ₄ : Eu ²⁺ , oxo-nitrides such as (Ba _1-xy Sr _x Ca _y ) Si ₂ O ₂ N ₂ : Eu ²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl ₂ O ₃ N ₂ :Eu ²⁺ , Ba _4-x Ca _x Si ₆ ON ₁₀ :Eu ²⁺ (0 ≤ x ≤ 1), (Ba _1-x Sr _x ) Y ₂ Si ₂ Al ₂ O ₂ N ₅ :Eu ²⁺ (0 ≤ x ≤ 1), Sr _x Si _(6-y) Al _y O _y N _(8-y) : Eu ²⁺ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Ba ₃ Si ₆ O ₁₂ N ₂ :Eu ²⁺ , Si _6-z Al _z O _z N _8-z :Eu ²⁺ (0 ≤ z ≤ 0.42), M _x Si _12-mn Al _m+n O _n N _16-n :Eu ²⁺ (M = Li, Mg, Ca, Y; x = m/v; v = valence of M, x ≤ 2), M _x Si _12-mn Al _m+n O _n N _16-n :Ce ³⁺ , AE _2-xa RE _x Eu _a Si _1-y O _4-x-2y N _x (AE = Sr, Ba, Ca, Mg; RE = rare earth elements), AE _2-xa RE _x Eu _a Si _1-y O _4-x-2y N _x (AE = Sr, Ba, Ca, Mg; RE = rare earth metal elements), Ba ₃ Si ₆ O ₁₂ N ₂ :Eu ²⁺ or nitrides such as La _3-x Y _x Si ₆ N ₁₁ :Ce ³⁺ , (Ba _1-xy Sr _x Ca _y ) ₂ Si ₅ N ₈ :Eu ²⁺ , (Ca _1-x Sr _x )AlSiN ₃ :Eu ²⁺ (0 ≤ x ≤ 1), Sr ⁽ Sr _1-x Ca _x )Al ₂ Si ₂ N _{6 : Eu} ²⁺ ₍ 0 ≤ x ≤ 0.2) _{, Sr} ⁽ Sr _{1 - x Ca y} ) SiN ₂ :Eu ²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba _1-xy Sr _x Ca _y ) SiN ₂ :Ce ³⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Sr _1-x Ca _x ) LiAl ₃ N ₄ :Eu ²⁺ (0 ≤ x ≤ 1), (Ba _1-xy Sr _x Ca _y )Mg ₂ Al ₂ N ₄ :Eu ²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba _1-xy Sr _x Ca _y )Mg ₃ SiN ₄ :Eu ²⁺ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1).

According to at least one embodiment, the conversion element consists of the phosphor described here. For example, the phosphor is formed as a ceramic.

For example, the conversion element only partially converts the electromagnetic radiation from the semiconductor chip into electromagnetic radiation of the emission spectrum, while another portion of the semiconductor chip's electromagnetic radiation is transmitted by the conversion element. In this case, the optoelectronic component preferably emits mixed light composed of electromagnetic radiation of the first wavelength range and electromagnetic radiation of the emission spectrum. For example, the electromagnetic component emits white light.

The optoelectronic component can be used for various applications, such as single- or two-component white light solutions with a comparatively high color rendering index (CRI). More efficient and cost-effective optoelectronic components can be produced. Furthermore, the phosphor is suitable for use in optoelectronic components at higher irradiances due to its low flux quenching compared to Eu-doped phosphors.

According to at least one embodiment, the optoelectronic component is free of any additional phosphor. In particular, the optoelectronic component has a CRI of greater than or equal to 70, preferably 78, for a cool white color coordinate. The cool white color coordinate is located, for example, at the coordinates x _CIE = 0.316 and y _CIE = 0.327. The correlated color temperature CCT is 6355. This allows for the realization of a single-component white light solution with a high CRI.

According to at least one embodiment, the conversion element comprises at least one further phosphor which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range.

The additional phosphor can be located in the same conversion element as the first phosphor. Alternatively, the additional phosphor can also be arranged in a further conversion element located above/below the conversion element. The additional phosphor preferably converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the third wavelength range, which differs from the emission spectrum. In particular, the additional phosphor emits orange-red light.

According to a further embodiment, the optoelectronic component comprises a further phosphor that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range and has a CRI of greater than or equal to 70, preferably 78, at a color temperature of 4000 Kelvin. The color coordinates x _CIE are 0.380 and y _CIE are 0.377. The nitride phosphor (Sr,Ca) SiAlN ₃ :Eu ²⁺ is used as a further phosphor. This advantageously allows for a high CRI for two-component white light solutions.

The phosphor can be produced using the method described below. Features and embodiments that are implemented solely in conjunction with the phosphor and the optoelectronic component can also be implemented in the method, and vice versa.

• - M^I ein Element oder eine Kombination von Elementen aus der Gruppe der zweiwertigen Elemente,
• - M^II ein Element oder eine Kombination von Elementen aus der Gruppe der dreiwertigen Elemente,
• - A ausgewählt ist aus Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er oder Kombinationen daraus,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le \text{12;}$$ $$0\le \text{v}\le 42\text{;}$$ $$0\le \text{w}\le \text{12;}$$ $$0\le \text{x}\le 27\text{;}$$ $$0\le \text{y}\le 4$$ ist, umfassend die Schritte

• - Bereitstellen einer Zusammensetzung von Edukten,
• - Homogenisieren der Edukte zur Herstellung eines Reaktionsgemenges, und
• - Erhitzen des Reaktionsgemenges auf eine Temperatur zwischen einschließlich 1600 °C und einschließlich 2200 °C.

According to one embodiment of the process for producing a phosphor having the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A, where

• - M ^{I is} an element or a combination of elements from the group of divalent elements,
• - M ^II an element or a combination of elements from the group of trivalent elements,
• - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,

$$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le \text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le \text{12;}$$ $$0\le \text{v}\le 42\text{;}$$ $$0\le \text{w}\le \text{12;}$$ $$0\le \text{x}\le 27\text{;}$$ $$0\le \text{y}\le 4$$ is to comprehensively cover the steps

• - Providing a composition of reactants,
• - homogenizing the reactants to produce a reaction mixture, and
• - Heating the reaction mixture to a temperature between 1600 °C and 2200 °C inclusive.

According to at least one embodiment of the process, a composition of the reactants is homogenized in a first step of the process. The composition can be a stoichiometric composition or a non-stoichiometric composition of the reactants. This can be done, for example, in a hand mortar, a mortar mill, a ball mill, a multi-axis mixer, or the like.

According to one embodiment of the process, the resulting reaction mixture of reactants is transferred into a crucible. The crucible can be made of, for example, corundum, tungsten, molybdenum, or tantalum.

According to at least one embodiment, the reaction mixture is heated in a further step to a temperature between 1600 °C and 2200 °C, preferably between 1800 °C and 2200 °C, particularly preferably between 1900 °C and 2100 °C. The temperature is maintained for 1 hour up to and including 20 hours. Preferably, the temperature is maintained for 4 hours to 10 hours. takes place under a nitrogen or reducing atmosphere, such as forming gas, at normal or elevated pressure. The gas atmosphere, for example, contains a mixture of nitrogen or argon with up to 10% hydrogen, or is formed from such a mixture.

After the reaction has taken place and the product has cooled, it is ground in a hand mortar. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill. The reaction mixture is preferably heated under an _N2 atmosphere at 20 bar and a temperature of 2000 °C for four to 10 hours. The reaction mixture is then cooled and ground in a hand mortar.

According to at least one embodiment, the reactants are selected from the following group: yttrium compound, lutetium compound, strontium compound, calcium compound, silicon compound, cerium compound, aluminum compound and combinations thereof.

According to at least one embodiment, the reactants are selected from the following group: yttrium nitride, yttrium oxide, lutetium nitride, lutetium oxide, calcium nitride, calcium oxide, calcium carbonate, calcium nitrate, strontium nitride, strontium oxide, strontium carbonate, strontium nitrate, strontium subnitride, silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, aluminum carbonate, aluminum nitrate, cerium oxide, cerium nitride, cerium fluoride and combinations thereof.

According to at least one embodiment, the reaction mixture is heated at a pressure between 15 bar and 25 bar. For example, the reaction mixture is heated at 20 bar in a high-pressure furnace.

The present phosphor is particularly suitable for high irradiances, since only low quenching effects occur compared to Eu-doped phosphors.

The phosphor described here is very well suited for the green to yellow-orange spectral range and contributes to more efficient and/or simpler and thus cheaper solutions for the application.

The phosphor is suitable for use in fluorescent-converted LEDs and can be used for various applications, such as 1- or 2-component white light solutions with a comparatively high CRI.

Further advantageous embodiments and developments of the phosphor of the optoelectronic component and of the method emerge from the following embodiments described in conjunction with the figures.

• 1 einen schematischen Ausschnitt einer Kristallstruktur eines Wirtsgitters eines Leuchtstoffs gemäß einem Ausführungsbeispiel;
• 2 einen schematischen Ausschnitt einer Kristallstruktur eines Wirtsgitters eines Leuchtstoffs gemäß einem Ausführungsbeispiel;
• 3 einen schematischen Ausschnitt einer Kristallstruktur eines Wirtsgitters eines Leuchtstoffs gemäß einem Ausführungsbeispiel;
• 4 Emissionsspektren eines Leuchtstoffs gemäß einem Ausführungsbeispiel;
• Figure 5 ein Emissionsspektrum eines Leuchtstoffs gemäß einem Vergleichsbeispiel;
• 6, 7 und 8 jeweils eine schematische Schnittdarstellung eines optoelektronischen Bauelements gemäß jeweils einem Ausführungsbeispiel;
• 9 ein simuliertes LED-Emissionsspektrum mit dem Leuchtstoff gemäß jeweils einem Ausführungsbeispiel;
• Figure 10 ein simuliertes LED-Emissionsspektrum mit einem Leuchtstoff gemäß einem Vergleichsbeispiel;
• 11 ein simuliertes LED-Emissionsspektrum mit dem Leuchtstoff und dem Leuchtstoff (Sr,Ca)SiAlN₃:Eu²⁺ gemäß einem Ausführungsbeispiel;
• 12 ein simuliertes LED-Emissionsspektrum mit den Leuchtstoffen YAG:Ce³⁺ und (Sr,Ca)SiAlN₃:Eu²⁺ gemäß einem Vergleichsbeispiel; und
• 13 eine schematische Schnittdarstellung verschiedener Verfahrensstadien eines Verfahrens zur Herstellung eines Leuchtstoffs gemäß einem Ausführungsbeispiel.

They show:

• 1 a schematic section of a crystal structure of a host lattice of a phosphor according to an embodiment;
• 2 a schematic section of a crystal structure of a host lattice of a phosphor according to an embodiment;
• 3 a schematic section of a crystal structure of a host lattice of a phosphor according to an embodiment;
• 4 Emission spectra of a phosphor according to an embodiment;
• Figure 5 shows an emission spectrum of a phosphor according to a comparative example;
• 6 , 7 and 8 each shows a schematic sectional view of an optoelectronic component according to an embodiment;
• 9 a simulated LED emission spectrum with the phosphor according to one embodiment;
• Figure 10 shows a simulated LED emission spectrum with a phosphor according to a comparative example;
• 11 a simulated LED emission spectrum with the phosphor and the phosphor (Sr,Ca)SiAlN ₃ :Eu ²⁺ according to an embodiment;
• 12 a simulated LED emission spectrum with the phosphors YAG:Ce ³⁺ and (Sr,Ca)SiAlN ₃ :Eu ²⁺ according to a comparative example; and
• 13 a schematic sectional view of various process stages of a process for producing a phosphor according to an embodiment.

Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements, particularly layer thicknesses, may be exaggerated for clarity and/or clarity.

The phosphor 1 according to one embodiment is in the form of particles. For example, the particles have a grain size between 0.2 micrometers and 100 micrometers (not explicitly shown).

The phosphor 1 according to the embodiment of the 1 obeys the formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A, in particular the phosphor obeys the empirical formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C ₈ ³⁺ . The host lattice comprises a structure with an orthorhombic space group. The phosphor 1 crystallizes in the orthorhombic space group Pna2 ₁ . The crystal structure of the host lattice of the phosphor 1 comprises corner-sharing (Si,Al) (O,N) ₄ tetrahedra 2. In the 1 A section of the crystal structure is shown along the three crystallographic spatial directions. The M ^II ions 6, in particular yttrium, are represented by black spheres, the M ^I ions 5, in particular Ca, by white spheres. The (Si,Al) (O,N) ₄ tetrahedra 2 form channels 7 in which at least one M ^I ion 5 and/or one M ^II ion 6 and/or one A ion is located. The (Si,Al) (O,N) ₄ tetrahedra 2 are linked via vertices 3 to other (Si,Al) (O,N) ₄ tetrahedra 2. The N/O ions are exclusively doubly bridged.

The 2 shows a schematic section of the crystal structure of the phosphor 1 according to an exemplary embodiment. A formed six-ring 8 is shown as an example. The orientation of the (Si,Al)(O,N) ₄ tetrahedra 2 within the various six-rings 8 can vary. Rings, in this case six-ring 8, are formed from the six corner-sharing (Si,Al)(O,N) ₄ tetrahedra 2. These rings are corner-sharing among themselves, thereby forming corrugated layers in the ab plane.

In the 3 The structure of the phosphor 1, in this case (Y,Ca) ₂₅ (Si,Al) ₂₇ (N,O) ₅₄ :Ce ^{3+ ,} is shown according to an embodiment. The respective sections of the structure are shown along the three crystallographic axes. In each case, the view along the crystallographic b-axis is in the 3A , along the c-axis in the 3B and along the a-axis in the 3C . In the 3 For clarity, the entire 3-dimensional structure is shown, without the cations Y and Ca. In the 3B Layers are depicted from this structure, which consist of the 3C visible strands of (Si,Al) (O,N) ₄ tetrahedra 2 are formed.

The nitrogen/oxygen ions of the (Si,Al) (O,N) ₄ tetrahedron 2 are exclusively doubly bridging. The (Si,Al) (O,N) ₄ tetrahedra 2 are linked via vertices 3 to other (Si,Al) (N,O) ₄ tetrahedra 2. The (Si,Al) (O,N) ₄ tetrahedra 2 form infinite six-single chains along the crystallographic a-axis. After six (Si,Al) (O,N) ₄ tetrahedra 2, the alignment of the (Si,Al) (O,N) ₄ tetrahedra 2 repeats. 3C These are shown individually for each tetrahedral layer formed orthogonally to the c-axis. These six-chain single chains are linked to each other via further tetrahedral vertices and form corrugated layers in the ab-plane. For this purpose, two superimposed tetrahedral layers are considered along the crystallographic c-axis (see 3 ). The wave motif is particularly well visible in the view along the crystallographic c-axis. These wavy layers show as their main structural motif in the ab-plane rings of six corner-sharing (Si,Al) (O,N) ₄ -tetrahedra 2, which are arranged in 2 The corrugated tetrahedral layers are now linked to each other via common corners 3 and thus form a three-dimensional network, see 3A This creates interconnected six-membered rings 8 both in the ab-plane and the bc-plane. These form channels 7 along the crystallographic c-axis and along the crystallographic a-axis. The cations M ^I 5 and M ^II 6, in particular calcium/strontium or lutetium/yttrium, are present within these channels 7. The activator ion A occupies statistically distributed, identical positions as M ^I and M ^II ions. For example, the calcium positions can also be occupied by yttrium and vice versa. Mixed occupation by the two ions is also conceivable; for the silicon positions, an exchange or mixed occupation with aluminum is also conceivable. For the nitrogen position, an exchange or mixed occupation with oxygen is also conceivable.

The structure of the phosphor 1 M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _17-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A was determined from a single crystal by single-crystal X-ray diffraction. The lattice parameters, crystallographic data, and the basic quality parameters of the X-ray determination are summarized in Table 1. Table 1: Crystallographic data of (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ (Example 1). molecular formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ Crystal system Orthorhombic Space group Pna2 ₁ (No. 33) a / Å 15,401 (1) b / Å 21,719 (1) c / Å 15,384 (1) Cell volume/ Å ³ 5146 T / K 296 (2) radiation Cu-Kα (A = 1.542 Å) Measuring range 3.4 < θ < 72.3 -19 ≤ h ≤ 19 -26 ≤ k ≤ 26 -19 ≤ 1 ≤ 19 Number of all reflexes 10091 Independent reflexes 9374 Number of parameters 957 Δρ _max, Δρ _min /eÅ ^-3 2.64/-2.18 R ₁ (obs/all) 0.0914/0.0966 wR ₂ (obs/all) 0.2381/0.2452 GooF 1,072

For the phosphor 1 with the molecular formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _s4-svwx O _s+v+w+x :A, crystallographic position parameters are also known, which are shown in Table 2. Table 2: Crystallographic position parameters of (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N)5 ₄ :Ce ³⁺ (Example 1). Atom type Wyckoff location x y z U _iso Y001 Y 4α 0.13356(14) 0.03880(10) 0.47975(16) 0.0380(5) Y002 Y 4α 0.85122(17) 0.36644(10) 0.82237(19) 0.0469(6) Y003 Y 4α 0.03981(18) 0.44991(11) 0.82321(19) 0.0506(6) Y004 Y 4α 0.4926(2) 0.37062(14) 0.8370(2) 0.0570(7) Y005 Y 4α 0.0035(2) 0.13717(14) 0.1778(3) 0.0649(9) Ca01 Ca 4α 0.1475(2) 0.31828(16) 0.6801(3) 0.0237(7) Ca02 Ca 4α -0.3506(2) 0.13610(15) 0.1524(3) 0.0210(7) Ca03 Ca 4α 0.0002(3) 0.46055(16) 0.4816(3) 0.0239(8) Ca04 Ca 4α -0.1787(3) 0.37576(17) 0.4720(3) 0.0281(8) Ca05 Ca 4α 0.3412(3) 0.22815(19) 0.3205(3) 0.0297(8) Ca06 Ca 4α 0.3280(3) 0.21652(18) 0.6478(3) 0.0261(8) Ca07 Ca 4α 0.6656(3) 0.55343(19) 0.6579(3) 0.0323(9) Ca08 Ca 4α 0.2901(3) 0.43161(17) 0.8275(2) 0.0310(8) Ca09 Ca 4α 0.0097(3) 0.20247(18) 0.6476(3) 0.0287(9) Ca10 Ca 4α -0.0106(4) 0.4558(2) 0.1522(3) 0.0342(10) Call Ca 4α -0.1542(3) 0.6336(2) -0.0109(3) 0.0328(9) Ca12 Ca 4α 0.1698(3) 0.0375(2) 0.1814(3) 0.0375(10) Ca13 Ca 4α 0.6787(3) 0.4523(2) 0.8215(3) 0.0341(9) Approx. 14 Ca 4α 0.1336(4) 0.2722(3) 0.3282(4) 0.0579(17) Ca15 Ca 4α -0.1474(4) 0.2629(3) 0.9942(3) 0.0464(12) Ca16 Ca 4α -0.3172(4) 0.5365(2) 0.0026(3) 0.0399(11) Ca17 Ca 4α 0.1449(6) 0.2722(3) 0.9707(3) 0.068(2) Ca18 Ca 4α -0.1695(4) 0.3642(2) 0.1519(4) 0.0410(11) Ca19 Ca 4α -0.0301(4) 0.1430(3) 0.4617(5) 0.0595(17) Ca20 Ca 4α 0.0021(10) 0.2012(5) -0.0030(6) 0.102(4) Si01 Si/Al 4α -0.0173(4) 0.3759(3) 0.6481(4) 0.0246(11) Si02 Si/Al 4α -0.1554(4) 0.4581(2) -0.0217(4) 0.0232(10) Si03 Si/Al 4α -0.1587(4) 0.5356(2) 0.1446(4) 0.0228(10) Si04 Si/Al 4α -0.0137(4) 0.2925(2) 0.4889(4) 0.0255(11) Si05 Si/Al 4α 0.0088(4) 0.3688(2) 0.9822(4) 0.0233(10) Si06 Si/Al 4α -0.0064(4) 0.2900(2) 0.1549(4) 0.0211(10) Si07 Si/Al 4α 0.1548(4) 0.2070(3) 0.4939(4) 0.0230(10) Si08 Si/Al 4α -0.1778(3) 0.4563(2) 0.3276(4) 0.0219(10) Si09 Si/Al 4α 0.3280(3) 0.2907(2) 0.8216(4) 0.0219(10) Si10 Si/Al 4α 0.0018(3) 0.2867(2) 0.8121(3) 0.0203(10) Si11 Si/Al 4α -0.0156(4) 0.3765(2) 0.3200(4) 0.0240(10) Si12 Si/Al 4α -0.1463(4) 0.5365(2) 0.8191(4) 0.0254(11) Si13 Si/Al 4α 0.3107(4) 0.3813(2) 0.3252(3) 0.0230(10) Si14 Si/Al 4α 0.3233(4) 0.3760(2) 0.6562(4) 0.0216(10) Si15 Si/Al 4α 0.3124(4) 0.2893(2) 0.4994(3) 0.0230(10) Si16 Si/Al 4α 0.6630(4) 0.3865(2) 0.6566(3) 0.0209(10) Si17 Si/Al 4α 0.6729(3) 0.3013(2) 0.8171(3) 0.0208(9) Si18 Si/Al 4α 0.1700(4) 0.2079(2) 0.1534(4) 0.0235(10) Si19 Si/Al 4α -0.1735(4) 0.4614(2) 0.6529(4) 0.0262(12) Si20 Si/Al 4α 0.5141(4) 0.4574(2) 1.0077(4) 0.0218(10) Si21 Si/Al 4α 0.6808(4) 0.3750(2) 0.9874(3) 0.0229(10) Si22 Si/Al 4α 0.1689(3) 0.4554(2) -0.0075(3) 0.0212(10) Si23 Si/Al 4α 0.1571(4) 0.1247(2) 0.3302(4) 0.0230(10) Si24 Si/Al 4α 0.4926(4) 0.4587(2) 0.6690(3) 0.0203(10) Si25 Si/Al 4α -0.1799(3) 0.2027(2) 0.1652(3) 0.0204(10) Si26 Si/Al 4α 0.3402(3) 0.3793(2) -0.0006(3) 0.0212(10) Si27 Si/Al 4α 0.5146(4) 0.5378(2) 0.8347(4) 0.0242(11) N01 ^[2] O/N 4α 0.4903(12) 0.4726(8) 0.8962(10) 0.027(3) N02 ^[2] O/N 4α 0.2132(12) 0.0559(6) 0.3407(13) 0.032(4) N03 ^[2] O/N 4α -0.2162(11) 0.1631(10) 0.0732(11) 0.035(4) N04 ^[2] O/N 4α -0.1264(11) 0.3875(8) 0.3020(10) 0.027(3) N05 ^[2] O/N 4α 0.0173(16) 0.3158(10) 0.2561(11) 0.044(5) N06 ^[2] O/N 4α 0.2004(12) 0.1811(8) 0.3966(11) 0.032(3) N07 ^[2] O/N 4a 0.3896(11) 0.4319(8) 0.7009(12) 0.033(4) N08 ^[2] O/N 4a 0.2792(11) 0.3338(6) 0.7424(10) 0.023(3) N09 ^[2] O/N 4α 0.2318(12) 0.2623(8) 1.2068(10) 0.031(3) N10 ^[2] O/N 4α -0.0141(12) 0.3019(8) 0.9222(12) 0.031(4) N11 ^[2] O/N 4a 0.0559(12) 0.2353(9) 0.4586(13) 0.038(4) N12 ^[2] O/N 4α 0.1527(13) 0.1464(8) 0.2226(11) 0.032(4) N13 ^[2] O/N 4α 0.1161(12) 0.3871(8) 0.9619(13) 0.033(4) N14 ^[2] O/N 4α 0.6213(13) 0.4337(9) 1.0337(14) 0.038(4) N15 ^[2] O/N 4α 0.2822(11) 0.4467(7) -0.0203(11) 0.027(3) N16 ^[2] O/N 4α -0.1693(12) 0.4662(8) 0.0871(11) 0.028(3) N17 ^[2] O/N 4α 0.7210(11) 0.3442(7) 0.7350(10) 0.025(3) N18 ^[2] O/N 4a 0.2853(14) 0.3312(9) 0.4079(13) 0.037(4) N19 ^[2] O/N 4α -0.1706(13) 0.5179(8) 0.2513(11) 0.031(4) N20 ^[2] O/N 4α -0.0018(11) 0.3574(7) 0.7573(10) 0.024(3) N21 ^[2] O/N 4α 0.1387(12) 0.4719(8) 0.0961(10) 0.027(3) N22 ^[2] O/N 4α -0.1058(15) 0.2588(10) 0.1397(16) 0.049(5) N23 ^[2] O/N 4a 0.0738(14) 0.2409(10) 0.1220(15) 0.045(5) N24 ^[2] O/N 4α 0.0074(12) 0.3588(8) 0.4260(13) 0.034(4) N25 ^[2] O/N 4α -0.1628(18) 0.4662(10) 0.7636(13) 0.047(5) N26 ^[2] O/N 4α -0.1357(12) 0.4847(8) 0.4231(11) 0.029(3) N27 ^[21] O/N 4a 0.7600(11) 0.2646(8) 0.8669(10) 0.027(3) N28 ^[2] O/N 4α 0.6210(12) 0.5585(8) 0.8623(13) 0.034(4) N29 ^[2] ON 4a 0.4397(11) 0.4032(8) 1.0449(10) 0.027(3) N30 ^[2] O/N 4α 0.4460(11) 0.5988(7) 0.8593(10) 0.026(3) N31 ^[2] O/N 4α -0.1205(10) 0.2719(7) 0.4727(11) 0.028(3) N32 ^[2] O/N 4a 0.2172(10) 0.2632(7) 0.5475(11) 0.025(3) N33 ^[2] O/N 4α -0.1653(12) 0.5289(8) 0.9282(11) 0.029(3) N34 ^[2] O/N 4α -0.2294(13) 0.4087(9) -0.0639(12) 0.037(4) N35 ^[2] O/N 4α -0.1330(12) 0.1567(7) 0.2414(11) 0.027(3) N36 ^[2] O/N 4α 0.5082(13) 0.5284(9) 0.7227(12) 0.036(4) N37 ^[2] O/N 4α -0.1204(11) 0.3933(7) 0.6190(10) 0.026(3) N38 ^[2] O/N 4α 0.0106(10) 0.3089(7) 0.5947(11) 0.025(3) N39 ^[2] O/N 4α -0.0864(12) 0.2451(8) 0.7737(10) 0.030(3) N40 ^[2] O/N 4α -0.0518(12) 0.4332(7) -0.0511(13) 0.033(4) N41 ^[2] O/N 4α -0.0063(12) 0.3558(8) 1.0900(11) 0.028(3) N42 ^[2] O/N 4α 0.3620(12) 0.3390(7) -0.0966(12) 0.031(3) N43 ^[2] O/N 4α 0.2308(12) 0.4098(8) 0.6089(11) 0.029(3) N44 ^[2] O/N 4α -0.0370(11) 0.5537(8) 0.8006(11) 0.031(4) N45 ^[2] O/N 4α 0.5644(13) 0.4020(8) 0.7061(12) 0.035(4) N46 ^[2] O/N 4α -0.2853(14) 0.0930(10) 0.2778(11) 0.040(4) N47 ^[2] O/N 4α 0.6230(11) 0.3430(8) 0.8985(11) 0.028(3) N48 ^[2] O/N 4α 0.3741(10) 0.3306(7) 0.5791(11) 0.024(3) N49 ^[2] O/N 4a 0.7183(13) 0.3191(8) 1.0566(11) 0.034(4) N50 ^[2] O/N 4α -0.0533(12) 0.5629(8) 0.1267(11) 0.033(4) N51 ^[2] O/N 4a 0.5927(12) 0.2534(7) 0.7791(10) 0.027(3) N52 ^[2] O/N 4α -0.2843(13) 0.4545(10) 0.6312(19) 0.051(6) N53 ^[2] O/N 4α 0.4995(10) 0.4715(7) 0.5580(11) 0.022(3) N54 ^[2] O/N 4α 0.137(2) 0.1473(13) 0.5573(14) 0.063(9)

The 4 shows two emission spectra E1-AB1 and E1-AB2 of a phosphor 1 according to an embodiment, each excited with electromagnetic radiation in the UV or blue wavelength range. The phosphor 1 was excited at a wavelength of 448 nm.

The emission spectrum is the spectral intensity I of the electromagnetic radiation emitted by the phosphor 1 as a function of the wavelength λ. The emission spectrum is depicted in a wavelength range from 400 nm to 900 nm.

The emission spectrum E1-AB1 has a dominant wavelength λ _dom of 568 nm at an excitation wavelength of 448 nm. The spectral half-width for the emission spectrum E1-AB1 of the phosphor 1 (Y, Ca) ₂₅ (Si, Al) ₂₇ (O, N) ₅₄ : Ce ³⁺ according to embodiment 1 is 145 nm. The emission maximum λ _peak is 547 nm.

The emission spectrum E1-AB2 of the phosphor 1 (Y, Ca) ₂₅ (Si, Al) ₂₇ (O, N) ₅₄ : Ce ³⁺ according to Embodiment 2 has a dominant wavelength of 567 nm at an excitation wavelength of 448 nm. A spectral half-width is 138 nm, and an emission maximum λ _peak is 547 nm. The difference between Embodiments 1 and 2 is shown below.

In the 5 An emission spectrum E-VB of the phosphor YAG:Ce ³⁺ according to a comparative example is shown. The comparative example is excited at an excitation wavelength of 448 nm. The phosphor according to the comparative example emits at a dominant wavelength of λ _dom of 568 nm with a half-width of approximately 120 nm.

The above-mentioned spectral data are summarized in Table 3. A wider half-width is evident for phosphor 1 compared to the comparative example YAG:Ce ³⁺ . Furthermore, the x _CIE and y _CIE color coordinates are shifted. Table 3: Important spectral data of (YCa) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ when excited at λ _exc = 448 nm. Example 1 Example 2 Comparison example 1YAG: Ce ³⁺ x _CIE 0.410 0.406 0.424 y _CIE 0.525 0.530 0.545 λ _dom 568 nm 567 nm 568 nm λ _peak 547 nm 547 nm 547 nm FWHM 145 nm 138 nm 120 nm

According to one embodiment, the phosphor 1 has the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ . The phosphor 1 emits electromagnetic radiation in the orange-red wavelength range. The emission spectrum is compared to the emission spectrum of the phosphor 1 with the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C8 ³⁺ is narrower. The half-width lies between 70 nm and 120 nm, and the λ _peak lies between 590 nm and 660 nm.

6 shows a schematic sectional view of an optoelectronic component 10 according to an exemplary embodiment, which has a semiconductor chip 11 that, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 12. The semiconductor chip 11 comprises an active layer sequence and an active region (not explicitly shown here) that serves to generate the primary radiation. The primary radiation is electromagnetic radiation of a first wavelength range. Preferably, it is electromagnetic radiation with wavelengths in the visible range, for example, in the blue spectral range.

A conversion element 13 is arranged in the beam path of the electromagnetic radiation emitted by the semiconductor chip 11 in the first wavelength range. The conversion element 13 is configured to partially absorb the electromagnetic radiation of the first wavelength range and at least partially convert it into electromagnetic radiation of the emission spectrum. In particular, the emission spectrum has a longer wavelength than the absorbed first wavelength range.

The conversion element 13 comprises a phosphor 1 having the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-sv-w+x :A. In particular, the conversion element 13 can comprise the phosphor 1 having the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C8 ³⁺ .

The phosphor 1 can be embedded in a matrix material. The matrix material is, for example, a silicone, a polysiloxane, an epoxy resin, or a glass. Alternatively, the conversion element 13 can be free of a matrix material. In this case, the conversion element 13 can consist of the phosphor 1, for example, a ceramic of the phosphor 1. The conversion element 13 can also be free of any other phosphor. This means that the conversion element comprises the phosphor 1 and the matrix material.

Alternatively, the conversion element 13 can comprise at least one further phosphor 1. The further phosphor 1 converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. The further phosphor can, for example, convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the red wavelength range. The further phosphor can, for example, be a (Sr,Ca)AlSiN ₃ :Eu. Other phosphors or combinations of phosphors are conceivable.

The semiconductor chip 11 and the conversion element 13 are embedded in a recess 15 of a housing 14. For better stabilization and protection of the semiconductor chip 11 and the conversion element 13, the recess 15 of the housing 14 can be filled with a potting compound 16, and the semiconductor chip 11 and the conversion element 13 are completely encased by the potting compound 16.

The conversion element 13 can be as in 6 shown in direct mechanical contact on the semiconductor chip 11. In particular, the radiation exit surface 12 forms the common surface between the conversion element 13 and the semiconductor chip 11. Alternatively, further layers, such as adhesive layers, can be located between the semiconductor chip 11 and the conversion element 13.

According to the 7 In the illustrated embodiment, the conversion element 13 is arranged at a distance from the semiconductor chip 11. In this case, a potting compound 16 can be arranged between the semiconductor chip 11 and the conversion element 13. Alternatively, the recess 15 between the semiconductor chip 11 and the conversion element 13 can also be free of a potting compound 16 or other layers or components.

According to the 8 In the illustrated embodiment, the conversion element 13 is arranged in a recess 15. The semiconductor chip 11 is embedded in the conversion element 13. The conversion element 13 comprises the phosphor 1 and the matrix material, which is, for example, silicone. Additional phosphors can be incorporated into the conversion element 13.

The 9 , 10 , 11 and 12 show simulated LED emission spectra of phosphor solutions. The phosphor solution of the emission spectrum SE1 has the phosphor 1 present (Y, Ca) ₂₅ (Si, Al) ₂₇ (O, N) ₅₄ : Ce ³⁺ . The simulated LED emission spectrum SE1-VB according to a comparative example has the A phosphor solution made from the reference phosphor YAG:Ce was used. A semiconductor chip with a dominant wavelength of 448 nm was used as the blue semiconductor chip. The emission spectrum with the phosphor solution SE1 achieves a cool white color coordinate of x _CIE = 0.316 and y _CIE = 0.327 with a CRI of 78.

In the 10 The blue semiconductor chip also has a dominant wavelength of 448 nm. The color coordinate of the comparison example SE1-VB is x _CIE = 0.320, y _CIE = 0.326, and a CRI of 64 is achieved.

Table 4 shows the data for the simulated 1-component white light solutions. Table 4: Data for the simulated 1-component white light solutions. Application example 1 Comparison example 1 fluorescent (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ (Example 1) YAG:Ce ³⁺ LED chip Blue (λ _dom = 448 nm) Blue (λ _dom = 448 nm) CCT in K 6355 6136 x _CIE 0.316 0.320 y _CIE 0.327 0.326 CRI 78 64

In the 11 and 12 Simulated LED emission spectra of phosphor solutions are shown. The phosphor solution of the emission spectrum SE2 is a 2-component phosphor solution and has the present phosphor 1 (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C8 ³⁺ and the additional red phosphor (Sr,Ca)SiAlN ₃ :Eu ²⁺ . The simulated LED emission spectrum SE2-VB of the 12 The phosphor solution consists of the reference phosphors YAG:Ce ³⁺ and (Sr,Ca)SiAlN ₃ :Eu ²⁺ . The semiconductor chip has a dominant wavelength of 448 nm.

The color temperature of the simulated phosphor solution in the 11 According to one embodiment, the lamp has a temperature of 4000 Kelvin and a high CRI of 78. 12 According to the comparison example, a CRI of 66 is achieved at a color temperature of 4000 Kelvin.

Table 5 shows the data for the simulated two-component white light solutions at a CCT of 4000 Kelvin. Table 5: Data for the simulated two-component white light solutions at a CCT of 4000K. Application example 2 Comparison example 2 fluorescent (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ (Example 1)+ (Sr,Ca)SiAlN ₃ :Eu ²⁺ YAG:Ce ³⁺ + (Sr,Ca)SiAlN ₃ :Eu ²⁺ LED chip Blue (λ _dom = 448 nm) Blue (λ _dom = 448 nm) CCT in K 4000 4000 x _CIE 0.380 0.380 y _CIE 0.377 0.377 CRI 78 66

In the method according to the embodiment of the 13 In a first process step S1, a composition of reactants is provided. The reactants may comprise an yttrium source, for example, yttrium nitride, yttrium oxide; a lutetium source, for example, lutetium nitride, lutetium oxide; a calcium source, for example, calcium nitride, calcium oxide, calcium carbonate, calcium nitrate; a strontium source, for example, strontium nitride, strontium subnitride, strontium oxide, strontium nitrate, or strontium carbonate; a silicon source, for example, silicon nitride or silicon oxide; an aluminum source, for example, aluminum nitride, aluminum carbonate, aluminum nitrate, or aluminum oxide; an activator, for example, cerium in the form of cerium oxide, cerium nitride, or cerium fluoride. The reactants are weighed under a protective gas atmosphere. and thoroughly mixed. This can be done in a hand mortar, mortar grinder, ball mill, multi-axis mixer, or similar. The reactants are then transferred to a tungsten crucible.

In a next step S2, the reaction mixture is heated to a temperature between 1600°C and 2200°C inclusive. Preferably, the reaction mixture is heated to a temperature between 1900°C and 2100°C. The synthesis temperature is maintained for one hour to 20 hours, preferably four hours to 10 hours. Annealing takes place under a nitrogen or reducing atmosphere, for example, forming gas, at normal or elevated pressure. For example, the reactants are reacted under a forming gas atmosphere and elevated pressure of 20 bar and at 1900 to 2000°C.

For example, the reactants YN, Ca ₃ N ₂ , Si ₃ N ₄ , and CeO ₂ are used. The reactants are thoroughly mixed under a protective gas atmosphere and then transferred to a tungsten crucible. This crucible is annealed in a high-pressure furnace at 2000 °C for 4 to 10 hours under a forming gas atmosphere and at an elevated pressure of 20 bar.

The temperature is maintained for a period of 1 hour up to and including 20 hours. Preferably, the temperature is maintained for between 4 and 10 hours.

According to one embodiment, the reactants YN, Sr ₂ N, Si ₃ N ₄ , and CeO ₂ are used. The reactants are thoroughly mixed under a protective gas atmosphere and then transferred to a tungsten crucible. This crucible is annealed in a high-pressure furnace at 1900 °C for 4 to 10 hours under a forming gas atmosphere and elevated pressure (20 bar).

According to another embodiment, the reactants LuN, Ca ₃ N ₂ , Si ₃ N ₄ , AlN, and CeO ₂ are thoroughly mixed under a protective gas atmosphere and then transferred to a tungsten crucible. This crucible is annealed in a high-pressure furnace at 1900 °C for 4 to 10 hours under a forming gas atmosphere and elevated pressure (20 bar).

According to another embodiment, the reactants LuN, _Sr2N , _Si3N4 , AlN, and _CeO2 are thoroughly mixed in a protective _gas atmosphere and then transferred to a tungsten crucible. This crucible is annealed in a high-pressure furnace at 1900 °C for 4 to 10 hours under a forming gas atmosphere and elevated pressure (20 bar).

In the next step (S3), the reaction mixture is cooled and ground in a hand mortar. This can be done, for example, with a hand mortar, a mortar grinder, or a ball mill.

Table 6 summarizes the initial weights of the reactants used to produce a phosphor 1 with the molecular formula (Y, Ca) ₂₅ (Si, Al) ₂₇ (O, N) ₅₄ : Ce ³⁺ according to embodiments 1 and 2. Table 6: Initial weight for (Y, Ca) ₂₅ (Si, Al) ₂₇ (O, N) ₅₄ : Ce ³⁺ . Example 1 & 2 YN 6.267 g Ca ₃ N ₂ 6.064 g _{Si3N4 ​} 17,350 g _CeO2 0.319 g

Table 7 shows an EDX analysis of the working examples 1 and 2 and thus shows the presence of yttrium, calcium and silicon in the phosphor 1. The deviations from the general formula arise from errors in the EDX measurement. Table 7: EDX of the working examples 1 & 2 normalized to Si = 27. Ca Y Ce Si Example 1 16, 8 3, 4 0.1 27 Example 2 18.7 2.5 0.03 27

The features and exemplary embodiments described in conjunction with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in conjunction with the figures can alternatively or additionally comprise further features according to the description in the general part.

The invention is not limited to the embodiments by the description. Rather, the invention encompasses any novel feature and any combination of features, including, in particular, any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.

List of reference symbols

1

fluorescent

2

(Si,Al) (O,N) ₄ -tetrahedron

3

Corner

4

framework structure

5

M ^I ions

6

M ^II ions

7

channel

8

Six-ring

10

optoelectronic component

11

semiconductor chip

12

Radiation exit surface

13

Conversion element

14

Housing

15

recess

16

Casting

I

intensity

λ

wavelength

E1-AB1

Emission spectrum of (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C8 ³⁺ from Example 1, excitation with λ _exc = 448 nm

E1-AB2

Emission spectrum of (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :C8 ³⁺ from Example 2, excitation with λ _exc = 448 nm

E-VB

Emission spectrum comparison example YAG:Ce ³⁺ , excitation 448 nm

SE1

simulated LED spectrum with phosphor 1

SE1-VB

simulated LED spectrum with reference phosphor YAG:Ce ³⁺ ,

SE2

Simulated LED spectrum with phosphor 1 and (Sr,Ca) SiAlN ₃ :Eu ²⁺

SE2-VB

Simulated LED spectrum with YAG:Ce and (Sr,Ca)SiAlN ₃ :Eu ²⁺

S1

Process step 1

S2

Process step 2

S3

Process step 3

Claims (17)

Phosphor (1) with the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A, where - M ^I is an element or a combination of elements from the group of divalent elements, - M ^II is an element or a combination of elements from the group of trivalent elements, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, $$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le -\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le \text{21;}$$ $$0\le \text{s}\le 4\text{;}$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le \text{12;}$$ $$0\le \text{v}\le 4\text{2;}$$ $$0\le \text{w}\le \text{12;}$$ $$0\le \text{x}\le \text{27; und}$$ $$0\le \text{y}\le 4.$$ Phosphor (1) according to the preceding claim, wherein the phosphor (1) has the formula M ^I _21-r+s+y M ^II _4+rsy S _{27-r- x+y} Al _r+xy N _54-sx O _s+x :A, where - M ^I is an element or a combination of elements from the group of divalent elements, - M ^II is an element or a combination of elements from the group of trivalent elements, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, $$\begin{array}{l}2*\left(21-\text{r}+\text{s}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-\text{y}\right)+4*\left(27-\text{r}-\text{x}+\text{y}\right)+3*\left(\text{r}+\text{x}-\text{y}\right)-3*(54-\\ \text{s}-\text{x})-2*\left(\text{s}+\text{x}\right)=0;\end{array}$$ $$0\le -\text{r}+\text{s}+\text{y}\le 4;$$ $$0\le \text{r}+\text{x}-\text{y}\le 27;$$ $$0\le \text{r}\le 21;$$ $$0\le \text{s}\le 4;$$ $$0\le \text{x}\le 27;\text{ und}$$ $$0\le \text{y}\le 4.$$ Phosphor (1) according to one of the preceding claims, wherein M ^I comprises Ca, Sr, Ba, Zn or combinations thereof. Phosphor (1) according to one of the preceding claims, wherein M ^II comprises La, Lu, Y or combinations thereof. Phosphor (1) according to one of the preceding claims, wherein A comprises cerium. Phosphor (1) according to one of the preceding claims, wherein A comprises europium. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Y,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ , (Y,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ , (Lu,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ Ce ³⁺ , (Lu,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Ce ³⁺ , (Lu,Ca) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ or (Lu,Sr) ₂₅ (Si,Al) ₂₇ (O,N) ₅₄ :Eu ²⁺ . Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) crystallizes in the orthorhombic space group Pna2 ₁ . Phosphor (1) according to one of the preceding claims, wherein a unit cell of the phosphor has 424 atoms. Phosphor (1) according to one of the preceding claims, wherein a crystal structure of the host lattice of the phosphor (1) comprises corner-sharing (Si,Al) (O,N) ₄ tetrahedra (2). Phosphor (1) according to one of the preceding claims, in which the (Si,Al) (O,N) ₄ tetrahedra form channels in which at least one M ^I atom and/or one M ^II atom and/or one A atom is located. Phosphor (1) according to one of the preceding claims, in which a dominant wavelength (λ _Dom ) of the electromagnetic radiation emitted by the phosphor (1) at an excitation wavelength of 448 nm lies between 560 nm and 575 nm inclusive. Phosphor (1) according to one of the preceding claims, wherein a half-width of the electromagnetic radiation emitted by the phosphor (1) is between 120 nm and 160 nm inclusive. Optoelectronic component (10) comprising: - a semiconductor chip (11) which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface (12), and - a conversion element (13) comprising a phosphor (1) according to Claim 1 which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum. Optoelectronic component (10) according to the preceding claim, wherein the conversion element (13) comprises at least one further phosphor which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. Process for producing a phosphor (1) having the general formula M ^I _{21-r+s-1/2t-1/2v+y} M ^II _{4+rs-1/3u-1/3w-y} Si _27-rtu-x+y Al _r+t+u+xy N _54-svwx O _s+v+w+x :A, where - M ^I is an element or a combination of elements from the group of divalent elements, - M ^II is an element or a combination of elements from the group of trivalent elements, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, $$\begin{array}{l}2*\left(21-\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\right)+3*\left(4+\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\right)+4*(27-\text{r}-\text{t}-\text{u}-\\ \text{x}+\text{y})+3*\left(\text{r}+\text{t}+\text{u}+\text{x}-\text{y}\right)-3*\left(54-\text{s}-\text{v}-\text{w}-\text{x}\right)-2*\left(\text{s}+\text{v}+\text{w}+\text{x}\right)=0;\end{array}$$ $$-21\le -\text{r}+\text{s}-1/2\text{t}-1/2\text{v}+\text{y}\le 0;$$ $$-4\le -\text{r}-\text{s}-1/3\text{u}-1/3\text{w}-\text{y}\le 0;$$ $$-27\le -\text{r}-\text{t}-\text{u}-\text{x}+\text{y}\le 0;$$ $$-54\le -\text{s}-\text{v}-\text{w}-\text{x}\le 0;$$ $$0\le \text{r}\le 21;$$ $$0\le \text{s}\le 4;$$ $$0\le \text{t}\le \text{27;}$$ $$0\le \text{u}\le 12;$$ $$0\le \text{v}\le 42;$$ $$0\le \text{w}\le 12;$$ $$0\le \text{x}\le 27;$$ $$0\le \text{y}\le \mathrm{4,}$$ comprising the steps of - providing a composition of reactants, - homogenizing the reactants to produce a reaction mixture, and - heating the reaction mixture to a temperature between 1600 °C and 2200 °C inclusive. A method for producing a phosphor (1) according to the preceding claim, wherein the reactants are selected from the following group: yttrium nitride, yttrium oxide, lutetium nitride, lutetium oxide, calcium nitride, calcium oxide, calcium carbonate, calcium nitrate, strontium nitride, strontium subnitride, strontium oxide, strontium carbonate, strontium nitrate, silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, aluminum carbonate, aluminum nitrate, cerium oxide, cerium nitride, cerium fluoride, and combinations thereof.