DE102013216303A1 - Sputtering target, apparatus for attaching a sputtering target, method for detecting the release of a sputtering material and manufacturing method - Google Patents

Abstract

The invention relates to a sputtering target (1), in particular a round or angular planar target, with a carrier, in particular with a back plate (8), and a sputtering material (9), wherein the carrier is connected to the sputtering material (9). According to the invention, it is provided that at least the carrier has at least one hole (12, 12a) passing completely through the carrier so that a release of the connection between carrier and sputtering material (9) can be detected with the aid of the hole (12, 12a). Furthermore, the invention relates to a device (2, 2a) for fixing a sputtering target and a method for detecting the release of a sputtering material (9) from a carrier of a sputtering target (1) and a method for producing a sputtering target (1).

Description

The invention relates to a sputtering target, in particular round or angular Planar target, with a carrier, in particular with a back plate, and a sputtering material, wherein the carrier is connected to the sputtering material. Furthermore, the invention relates to a device for fastening a sputtering target to a holding plate, preferably to a cooling plate, wherein the holding plate or the sputtering target has at least two sealing grooves, in each of which a sealing ring is positioned. Furthermore, the invention relates to a device for fastening a sputtering target to a holding plate, preferably to a cooling plate, wherein the holding plate or sputtering target has at least one sealing groove in which a sealing ring is positioned. Furthermore, the invention relates to a method for detecting the release of a sputtering material from a carrier, in particular a backplate, of a sputtering target by means of a device. Furthermore, the invention relates to a method for producing a sputtering target for detecting the release of a sputtering material from a carrier, in particular a backplate, of a sputtering target.

From the DE 10 2008 046 443 A1 a sputtering target with a carrier body and a sputtering material is known, wherein the sputtering material is fixed on the carrier body by means of at least one connecting layer. Liquid starting materials, for example solders, adhesives or filling compounds, can be used to produce the solid bonding layer. Alternatively, it is according to the DE 10 2008 046 443 A1 possible that the compound layer contains as the main constituent of its binder phase at least one inorganic oxide and / or a silicate.

From the DE 44 26 751 A1 is a device for attaching a heatable, at least two mutually firmly bonded layers containing and preferably serving for use as a large-area cathode sputter target plate assembly known. The sputtering material and the carrier are detachably connected to a cooling plate with screws.

In the screw head itself, a circumferential groove is recessed, in which a sealing ring is located.

Generally, it is known from the prior art that in the back plate of a sputtering target or in the cooling plate of a device for sputtering at least one circumferential groove is recessed, in which there is a sealing ring.

A disadvantage of the prior art known today is that detachment of the sputtering target, triggered for example in the form of deformation of the surface of the sputtering material due to excessive cooling water pressure and / or incorrect process parameters, and / or falling off of a portion of the sputtering material or the entire sputtering of the carrier can be determined only with great effort. This effort is evident, for example, in that metrologically expensive additional devices must be used in a sputtering system that does not yet exist. At present, for example, in the electronics industry, such a system error in the form of a modified sputtering target is only delayed in time and detected in subsequent process steps, for example in temporally subsequent process steps after coating by sputtering on a wafer. As a result, a large number of wafers are produced as scrap before the change in the sputtering target is noticed.

The object of the invention is therefore to prevent or at least reduce above-mentioned disadvantages and furthermore to provide a simple, cost-effective and rapid possibility by means of which a change in the connection of sputtering material to carrier of the sputtering target can be ascertained.

The object of the invention is achieved, on the one hand, in that at least the carrier has at least one hole which passes completely through the carrier, so that a detachment of the connection between carrier and sputtering material can be detected with the aid of the hole. The function of the hole is thereby to provide a way of allowing gas to be interchangeable through the hole, this feature being absolutely necessary in the form of at least one hole and describing the sole function of this hole to allow gas exchange if the hole does not closed or covered. Consequently, with the help of the hole, a release of the connection between the carrier and sputtering material can be determined. Another or other function such as attachment function or the like of carrier with sputtering material or carrier with holding plate does not have this hole.

The object of the invention is further achieved by means of a device in that the holding plate has at least one hole passing completely through the holding plate, wherein the hole is positioned between the two sealing grooves.

Furthermore, the object of the invention by an alternative device is achieved in that the holding plate on the top of the holding plate at least one recess, preferably a recess for receiving gas, preferably ambient air.

Furthermore, the object of the invention is also achieved with the aid of a method according to the invention in that at least one hole in the carrier is exposed during complete or partial release of the sputter material from the carrier, so that between the underside of the carrier and the top of the carrier through the hole an exchange of gas is carried out.

Furthermore, the object of the invention is also achieved by means of a method according to the invention in that the carrier and the sputtering material by means of a bonding layer, preferably by means of a bonding layer comprising a component or comprising a combination of different components, preferably comprising a solder layer and having a coating in each case Area of the support and the sputtering material are joined together and then at least one hole in the connection layer or through the connection layer completely through and / or at least one cavity is introduced into the sputtering material, preferably by drilling at least one hole in the region of the support. By means of at least one hole in the region of the carrier means that another hole, for example as a variant embodiment, a hole is only introduced into the connecting layer through this hole in the area of the carrier. It is possible that the cavity is formed as the end of a blind hole of a bore.

In the dependent claims of the independent claims each preferred embodiments of the invention are claimed. Hereinafter, these preferred embodiments will be described.

It is advantageous that with the help of at least one hole in each case in the holding plate and the back plate and a part of the sputtering material, it is easy, inexpensive and quickly detectable that the sputtering material has partially or completely detached from the carrier of the sputtering target, the cave thereby forms part of the hole. The hole or holes are easily insertable into the backing plate, the tie layer, and / or the sputtering material during manufacture of the sputtering target or, if the back plate already has one or more holes, into the tie layer and / or the sputtering material. It is thus possible to produce new sputtering targets in each case and to recycle used backplates and then reuse them. In the reused back plates usually has the back plate already at least one hole, so that in the connection layer and / or in the exchanged sputtering material on the back plate, a hole is introduced in the form of a cave. In a new sputtering target, a completely continuous hole is preferably introduced into the support in a method step, and a hole is made in the connection layer and / or a hole in the form of a cavity is introduced into the sputtering material. It is thus possible to easily produce new sputtering targets and to recycle used backplates. Furthermore, there is no deterioration during sputtering due to the geometrical change in the shape of the hole or holes in the use of the sputtering target, so that consistent process quality is ensured continuously during sputtering. Furthermore, no metrologically complex units in a sputtering device, which is preferably operated in a vacuum, are necessary because when changing the state of the sputtering target, in particular in the form of dissolution of sputtering material from the carrier, the chamber state of the sputtering device is changed in such a way that an exchange of gas takes place between the environment and the sputtering chamber. This is simple, inexpensive and usually detectable without additional measuring device with the already existing system components of a sputtering system. It is thus also advantageously possible to use already used sputtering devices with the sputtering target claimed in the application, wherein the system components are optionally adapted to the detection of a pressure drop in the chamber of the device.

Hereinafter, a hole will be described unless otherwise or necessarily described in the plural as holes, for example, when using multiple holes such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12 Holes, arrives. It is thus possible that at least the back plate of the sputtering target has one or more holes.

It is known to use the word "opening" for the purposes of the invention instead of the word "hole".

In a preferred embodiment of the sputtering target, the hole is a bore. Such a bore can be produced for example by means of known production methods such as turning, milling or drilling.

In a further advantageous embodiment, the hole in the carrier is positioned perpendicular to the surface of the carrier underside or positioned at an angle between 0 ° and 90 °, preferably from 30 ° to 60 °, based on the surface of the carrier base. Depending on the geometric configuration of the sputtering target and / or the device for fastening a sputtering target, it is advantageous to arrange the hole either vertically or at a specific angle, for example 45 °. The underside of the carrier is the side of the carrier which is arranged in the direction of the holding plate.

In a further advantageous embodiment, the hole has a round, oval, elliptical, rectangular, square shape or a combination of previous shapes, for example a hole with a partially round and partially angular geometric shape. Alternatively or additionally, a tubular, strip-shaped, elongated or slot-shaped form or a combination of the aforementioned forms is also possible. The respective shape can be seen in the direction of the central axis of the hole.

In a further advantageous embodiment, the hole passes through the carrier with the same dimensions. As a result, a particularly simple and cost-effective production of the hole by means of a machining production method such as drilling or the like is possible.

In a further advantageous embodiment, the hole has a diameter of 0.1 mm to 30 mm, preferably from 0.5 mm to 1.5 mm, in particular from about 1 mm.

In a further advantageous embodiment, the carrier has four to twelve holes, preferably eight holes. Alternatively, it is possible that the carrier has only one hole or two or three holes. Alternatively, it is also possible that the carrier has more than twelve holes. Particularly preferably, the hole in the carrier protrudes in a small area into the sputtering material, wherein there is an entry into the respective hole. This makes it possible that in a partial or complete detachment of the sputtering material from the carrier gas between the carrier base and carrier top can be replaced, more preferably the gas on the carrier top between the area between teilabgelösten or completely detached sputtering material and carrier top after a partial or complete Solve flown by. In a peel gas thus enters the chamber of a sputtering, as in this a negative pressure for sputtering is present, so that ambient air flows from the outside into the chamber through at least one exposed hole in the chamber, for example, when a Teilablösen took place.

In a further advantageous embodiment, a bonding layer is additionally applied between the substrate and the sputtering material, wherein the bonding layer comprises a component or a combination of different components, preferably a solder layer and a coating respectively in the region of the substrate and the sputtering material, wherein the coating on the only Lotschicht each adjacent.

As the solder layer, it is possible to use an elastomeric adhesive that is electrically conductive, silver, a silver alloy, indium, an indium alloy, tin, a tin alloy or an electrically conductive two-component adhesive. The alloys, that is, the silver alloy, the tin alloy, or the indium alloy are also commonly referred to as solder alloys.

In a further advantageous embodiment, the hole from a support side edge with a distance of 0.3 cm to 40 cm, preferably from 0.5 cm to 2 cm, in particular about 0.8 cm, positioned. Depending on the dimensions of the sputtering target, the preferred spacing varies since, in particular, larger sputtering targets with a larger dimensioned attachment must be fastened in a sputtering apparatus, so that the spacing with a larger sputtering target, in particular from the lateral edge of the carrier, tends to be greater distance values. Alternatively, it is possible that with particularly large sputtering targets, the distance is greater than 40 cm.

In the case of a holding plate, for example a cooling plate in a sputtering apparatus, or a carrier of the sputtering target, wherein the holding plate or the carrier has at least two sealing grooves, the distance of the hole from the side edge of the carrier is preferably to small values, ie 0.5 cm to 2 cm, tending.

Alternatively, in a holding plate, such as a cooling plate in a sputtering apparatus, or a carrier of the sputtering target, wherein the holding plate or carrier has at least one sealing groove, it is possible for the distance of the hole to the side edge to be between about 0.3 cm a value corresponding to the distance from side edge to center of the carrier lies.

In a further advantageous embodiment, the sputtering material and / or the connecting layer also have the hole. In this case, the connection layer preferably has the hole or the holes completely, so that the hole or the holes pass completely through the connection layer. The sputtering material has the hole or holes only in a portion of the entire sputtering material so that the hole or holes does not pass completely through the sputtering material. It forms a kind of cave, so that the hole in the sputtering material thus does not pass through the sputtering material. The sputtering material thus seals the respective hole in the form of the associated cavity.

In a further preferred embodiment, the hole or the holes are designed such that they pass through the carrier and the connecting layer, wherein the connecting layer is a component or a combination of different ones Has components, completely pass through and extend into a portion of the sputtering material.

In a further advantageous embodiment, the round planar target has a diameter of 100 mm to 500 mm, preferably of about 310 mm. Alternatively, smaller diameter, that is smaller than 100 mm, or larger diameter, that is greater than 500 mm, possible. Alternatively, it is possible to use a square planar target according to the invention in which the dimensions of the planar target at the respective outer edge measured from corner to corner are between 100 mm and 500 mm, preferably between approximately 200 mm and 400 mm. It is possible to use square, rectangular or angular shape or even a combination of angular shape with round, oval or elliptical shapes in a planar target. It is possible that the corners of a square planarget are rounded.

It is possible that in the device for fixing a sputtering target with at least two sealing grooves, the hole in the holding plate with the hole in the carrier is not positioned positively or positively. Form-fitting means according to the invention corresponding to each other. However, regardless of the position of the hole or holes in the carrier and the holding plate, it is possible for gas to flow through the gap between the carrier and the holding plate in the form of a gap. As a rule, however, there is no gas flow in the gap when the carrier hole corresponds to the hole of the holding plate, corresponding to one another.

Namely, after peeling off a part of a sputtering material, it is possible for gas from the ambient air, which is located outside the device, to pass through the at least one hole in the holding plate into the area between holding plate and carrier through at least one exposed hole in the carrier Inside the device flows. This makes it possible for gas to be exchanged particularly easily between the interior of the device in which the area is sputtered, preferably in the region of the chamber of a device, and the environment. An exchange of gas is thus made possible in accordance with the foregoing by an at least exposed hole in the carrier in which the sputtering material has detached from the carrier in this area.

The gas, for example, ambient air, flows in the case of the presence of offset holes, that is, holes that do not correspond between the staggered holes in the holding plate and the carrier through the gap between the holding plate and the carrier, so that between the at least one hole in the holding plate and the At least one exposed hole after the detachment of sputtering material can take place or takes place a gas exchange.

When mounting a sputtering target in a sputtering apparatus having a chamber, preferably a vacuum chamber, it is particularly preferred to mount the sputtering target to the holding plate such that the at least one sputtering target hole does not correspond to the at least one hole in the holding plate. because this is easier and kostengüntiger, as a complex alignment of the two holes to each other. Complex is when these are precisely aligned.

In a further advantageous embodiment of the device, the holding plate on the top of the holding plate at least one recess, preferably a recess for receiving coolant, preferably cooling water, on. Preferably, cooling water circulates in the recess during the sputtering process to cool the sputtering target.

In the respective device according to the invention, in a preferred embodiment of the device, the carrier can be fastened independently of the sputtering material, preferably the carrier can be fastened to the holding plate independently of the sputtering material by means of at least one premount attachment or at least one screw connection. Alternatively or additionally, any other form of attachment, for example a detachable rivet connection or the like, is possible.

In a further advantageous embodiment of the respective device in the device, a pressure difference relative to an ambient pressure, preferably a vacuum in the chamber of the device can be generated, wherein the sputtering target with the aid of a sealing ring against the environment and the prevailing ambient pressure is sealed there, if the Pressure difference from the ambient pressure, preferably the vacuum in the chamber is generated in the device. Such a vacuum can be generated in the device, for example, by means of a pump, preferably a turbo-pump. Typical values for a vacuum for sputtering in a chamber of a device are about 10 ^-5 bar before and after sputtering and about 10 ^-3 bar in the chamber during sputtering. A known sputtering gas, which dissolves the material ions from the sputtering material and is present in the chamber next to the vacuum, is, for example, the noble gas argon.

It is possible that the sputtering material is made of a noble metal and its alloys. Generally, it is known to use any form of metal or nonmetal for the sputtering material. For example, it is possible silver, platinum, gold, nickel or to use an alloy of silver, platinum, gold and / or nickel for a sputtering material. The carrier, in particular the back plate, is preferably made of copper or its alloys. Alternatively, it is possible to use aluminum, titanium, molybdenum or an alloy of aluminum, titanium and / or molybdenum. At least one inert gas, in particular argon, is preferably used in a sputtering apparatus as gases for sputtering.

In the production of a sputtering target, before the hole is introduced into the connecting layer or through the connecting layer completely and / or prior to the introduction of the cavity into the carrier, preferably into the back plate, at least one hole is first introduced through the carrier, is preferably drilled, with this introduced hole extends into the subsequently introduced hole and / or in the subsequently introduced cave. The carrier thus initially has no hole in this embodiment for producing a sputtering target. After this hole has been introduced into the carrier, preferably during the introduction of this hole into the carrier, the hole in the connecting layer and / or the cavity is introduced into the sputtering material.

It is therefore possible to introduce a new hole in a carrier, which is also introduced later in the joining layer and / or the sputtering material during the introduction.

Alternatively, it is possible to use an existing hole in the support for inserting a hole in the bonding layer and / or a cavity in the sputtering material.

Alternatively, it is possible to introduce a new hole in the carrier, wherein the carrier already has at least one hole.

Preferably, the hole in the carrier, preferably in the back plate, closed by means of a sticker before joining by means of connecting layer, in particular covered. Alternatively, it is possible to use a rubber piece, a wax or the like for closing. A closing or covering by means of a sticker can be opened, for example, by drilling through the sticker, so that the hole is open again after drilling.

It is possible that the holding plate, preferably the cooling plate, has at least one hole or at least one opening which has a round, oval, elliptical, tubular, strip-shaped, slot-shaped, elongated, angular, square, rectangular shape or a combination of preceding shapes , Alternatively, an annular circulation of the hole in the holding plate relative to the center of the holding plate is possible. The respective shape can be seen in the direction of the central axis of the hole. The position of the hole with respect to a surface can be arranged perpendicular or at an angle to this surface, preferably an angle between 0 ° and 90 °.

In the figures, preferred embodiments of the invention are explained in more detail.

Show it:

1 a section of a device for fixing a sputtering target,

2 a detailed view of the sputtering target 1 .

3 an alternative embodiment of a device for fixing a sputtering target and

4 a simplified illustrated device for attaching a sputtering target in a preferred embodiment.

In the following figure descriptions the same components are provided with the same reference numerals and new components provided with new reference numerals.

In 1 is a section of a sputtering target 1 illustrated that in a fragmentary illustrated device 2 is attached. In this device 2 it is possible to sputter components and thus to coat.

The sputtering target 1 is in the device 2 on a holding plate, which in the embodiment according to 1 a cooling plate 3 is attached. The cooling plate 3 has two sealing grooves 4a . 4b on, in each of which a sealing ring 5a . 5b is positioned. The two sealing grooves 4a . 4b run radially through the cooling plate 3 through, giving a circular shape around the center of the cooling plate 3 results. The respective sealing rings 5a . 5b are each designed as an O-ring. In the area between the two sealing rings 5a . 5b according to 1 ambient pressure, regardless of whether the sputtering target 1 used for sputtering or not.

The cooling plate 3 points to the top 17 the cooling plate 3 at least one depression 6 on. In the embodiment, the recess 6 designed so that this cooling water 7 can record. The cooling water 7 is exemplary in 1 between sputtering target 1 and cooling plate 3 shown.

According to 1 has the sputtering target in the exemplary embodiment 1 a carrier in the form of a back plate 8th on, with the back plate 8th partly to the cooling plate 3 directly according to 1 borders. Between back plate 8th and cooling plate 3 there is a gap 26 through which ambient air or other gas, such as helium, can flow. The gap 26 runs in the embodiment at least in the form of a ring shape around the center of the cooling plate 3 in the area between the two sealing grooves 4a . 4b radially around.

On the back plate 8th is a sputtering material 9 positioned, with the back plate 8th with the sputtering material 9 connected is. The sputtering material 9 For example, a material of nickel, a nickel alloy, silver or a silver alloy and the back plate 8th is for example made of copper or a copper alloy. It is assumed by way of example that the sputtering material 9 made of nickel and the back plate 8th consist of copper.

The sputtering target 1 according to 1 is designed as a round Planar target in the manner of a flat, round disc, which in the embodiment in the region of the back plate 8th a diameter of about 310 mm and in the area of the sputtering material 9 has a diameter of 300 mm. It thus forms a circumferential, flat edge through the back plate 8th around the sputtering material 9 according to 1 around. The edge forms a support surface for attachment, for example, a Pratzbefestigung described below or alternatively a screw connection. The screw connection is in 1 not shown.

The thickness of the back plate 8th in the exemplary embodiment, for example, about 6 mm and the thickness of sputtering material not yet sputtered 9 is for example about 5 mm. During and after sputtering, the thickness of the sputtering material decreases 9 ,

Between back plate 8th and sputtering material 9 In addition, a bonding layer is applied. In 2 is shown in detail the connection layer, wherein 2 enlarges detail A 1 represents.

In the exemplary embodiment, the connecting layer consists of different components, namely a solder layer 10 and two coatings 11a . 11b , wherein the respective coating 11a . 11b to the only layer of solder 10 each adjacent and these according to 2 each surrounds.

According to previous embodiments is between sputtering material 9 and back plate 8th the connection layer according to 2 applied, which is constructed such that on the back plate 8th first a coating 11a spatially follows, then a Lotschicht 10 made of indium or an indium alloy followed by another coating 11b follows, taking on this further coating 11b the sputtering material 9 follows. Indium or an indium alloy are flexible, so that these materials can be used particularly well.

In the 1 and 2 is further shown that the back plate 8th of the sputtering target 1 one through the back plate 8th completely through hole 12a having. The hole 12a is designed as a bore and thus has a round shape. The hole 12a in the back plate 8th is designed as an oblique hole, with the angle between the bottom 14 the back plate 8th and center axis of the hole 12a is about 45 °.

The sputtering target 1 has several holes in the embodiment 12a on, of which in 1 only a single example is shown. Alternatively it is possible that the sputtering target 1 only a single hole 12a having.

According to 1 has the cooling plate 3 each in the area of the holes 12a corresponding holes 12b on. Consequently, the cooling plate also points 3 several holes 12b on that the number of holes 12a in the sputtering target 1 correspond in the embodiment. The respective hole 12a of the sputtering target 1 and the associated, respective hole 12b the cooling plate 3 together form a common hole 12 where the hole 12 continuously through cooling plate 3 and sputtering target 1 is, however, a bend according to 1 in the area of the respective transition hole 12a the back plate 8th to hole 12b the cooling plate 3 having.

The following description with respect to in 1 illustrated single hole 12 is on the other, not shown holes 12 in the embodiment according to 1 and 2 transferred to.

In the embodiment according to 1 and 2 thus has the back plate 8th related to the disc-shaped embodiment symmetrically and with the same distance relative to a circumferential radius arranged oblique holes 12a on.

Furthermore, the cooling plate 3 in the embodiment thus several holes 12b on. The respective hole 12b the cooling plate 3 is also in the cooling plate 3 arranged so that the respective, corresponding hole 12a the back plate 8th corresponds and completely through the cooling plate 3 goes through, wherein in the embodiment according to 1 the hole 12b between the two sealing grooves 4a . 4b is positioned in each case. Due to the geometric design of a through hole 12 through cooling plate 3 and back plate 8th is the respective, oblique hole 12a in the back plate 8th and the respective hole 12b the cooling plate 3 consequently, positively positioned as the diameter of the hole 12a in back plate 8th and the hole 12b the cooling plate 3 in the embodiment are the same and further having intersecting central axes.

From the side edge 13 the back plate 8th is the hole 12 positioned at a distance of about 0.8 cm in the embodiment, wherein the distance between side edge 13 and centerline of the hole 12 in the area of a cave described below 15 is measured. In the exemplary embodiment, the hole spacing A1 of approximately 8 mm is shown by way of example. The diameter of the hole 12 is about 1 mm in the embodiment. The hole 12 goes in the embodiment with the same dimensions, that is with a diameter of about 1 mm, through the back plate 8th and the cooling plate 3 completely through.

The hole 12 according to 1 is in the area of the cooling plate 3 perpendicular to the surface of the underside 14 the back plate 8th positioned. To the bottom 14 the back plate 8th borders according to the previous statements in partial areas the cooling water 7 that is in the depression 6 located. The depression 6 thus forms a kind of bowl-shaped basin, which is around the center of the sputtering target 1 around flat below the back plate 8th is trained.

According to 1 and 2 is the hole 12 doing so designed that the hole 12 also by the bonding layer, consisting of the solder layer 10 and the two coatings 11a . 11b completely as a hole 12c goes through and in a part of the sputtering material 9 extends. The hole 12c in the region of the connecting layer is in the embodiment still as part of the hole 12a Are defined. The submit is as a cave 15 in 1 and 2 indicated, with the hole 12 in this cave 15 ends.

Alternatively it is possible that the two holes 12a . 12b do not correspond spatially by the back plate 8th so on the cooling plate 3 has been mounted that the respective central axes of the holes 12a . 12b can not cut. They are thus each offset from one another. In such a common case, it is also possible for gas to get in between the hole 12a the back plate 8th and the hole 12b the cooling plate 3 can be exchanged by connecting the hole 12a and hole 12b each with the help of the gap 26 between cooling plate 3 and back plate 8th is possible. This staggered arrangement of the holes 12a . 12b Particularly preferably, since the back plate 8th and the sputtering material 9 can be easily positioned on top of each other without affecting the orientation of the holes 12a . 12b when positioning and connecting backplate 8th and sputtering material 9 to pay attention.

In the embodiment, such a frequently occurring case of the offset of the holes 12a . 12b not shown to the connection of hole 12a and hole 12b without a gap 26 to be able to describe. The gap 26 in 1 is therefore not used in the embodiment, as gas directly through the holes 12a . 12b without going through the gap 26 can flow. At an offset of the holes 12a . 12b the gas would still be detoured through the gap 26 flow through it.

According to 1 is the sputtering target in the embodiment 1 with the cooling plate 3 with the help of at least one Pratzbefestigung 16 on the cooling plate 3 attached, wherein the geometric design of the sputtering target 1 the Pratzbefestigung 16 only the back plate 8th according to 1 firmly clamped. Here is the Pratzbefestigung 16 in the area of the peripheral edge of the back plate 8th , in accordance with the preceding statements with respect to the sputtering material 9 protrudes.

As part of the production of the sputtering target 1 is on the top of the back plate 8th in the area of the respective hole 12a each one sticker positioned. It is thus a reused back plate 8th where only the sputtering material 9 is exchanged. The reused back plate 8th thus already has holes 12a which are masked for production by means of the respective sticker.

Subsequently, at the sputtering target 1 , which subsequently is a reused sputtering target 1 is on the top of the back panel 8th and the bottom of the sputtering material 9 each with its own coating 11a . 11b applied. According to 2 for example, on the back plate 8th the coating 11a and on the sputtering material 9 the coating 11b applied. Subsequently, on the sputtering material 9 and / or the back plate 8th the solder layer 10 made of indium or an indium alloy. Subsequently, the two surfaces of the respective the corresponding coating 11a . 11b merging side, so that an arrangement after 2 results. The top of the back plate 8th has at least the coating 11a after bonding with the sputtering material 9 on.

The respective sticker on a hole 12a is in 2 not shown. By means of the sticker prevents the liquid solder layer 10 and the coatings 11a . 11b into the respective hole 12a penetrate and through the respective hole 12a already existing hole channel by means of solder and / or coating material close.

Subsequently, the hole 12a the back plate 8th for example, pierced, with the drill through the hole 12a the back plate 8th through into the sputtering material 9 drills with the help of a drilling tool. It forms a cave 15 out. The respective sticker will also be in the area of a respective hole 12a with pierced.

Alternatively, with a new, not yet used sputtering target 1 that's from a new backplate 8th and a new sputtering material 9 There is no sticker necessary because the holes 12a in the back plate 8th preferably only after bonding by means of at least solder or the like of sputtering material 9 and back plate 8th introduced, preferably drilled, be. This sputtering target made 1 can then be reused by only the sputtering material 9 is renewed in accordance with the foregoing.

In the embodiment, drilling is made completely through the bonding layer and further into the sputtering material 9 so that the cave 15 at the hole 12 formed. Thereby, it is particularly preferably possible, a gas flow through the exposed hole 12 through when at least a portion of the sputtering material 9 from the back plate 8th at least has been replaced.

By means of this production method, it is thus possible that spent sputtering material 9 on a back plate 8th can be replaced by the spent sputtering material 9 through a new sputtering material 9 is replaced. For this purpose, according to the preceding embodiments, a new solder layer 10 and new coatings 11a . 11b on the respective side of back plate 8th and new sputter material 9 applied, these connected and connect the respective hole 12a drilled, so that in the end of each hole 12 one cave each 15 in the new sputtering material 9 forms, with the back plate 8th is reused and already holes 12a had. This in 3 illustrated hole 12c is drilled through the bonding layer, this area being in the context of re-drilling. The hole 12c is in the embodiment as part of the hole 12a Are defined. The side on which the coating 11a is applied as the top of the back plate 8th referred to in the embodiment. The side on which the coating 11b is applied is in the embodiment as the bottom of the sputtering material 9 designated.

In 3 is an alternative embodiment of a device 2a for attaching a sputtering target 1 shown. In the following, only the differences are described, with the sputtering target 1 according to 3 both in its dimensions and in its composition not from the sputtering target 1 out 1 and 2 different.

The in the device 2a used cooling plate 3a has only a single sealing groove 4c on, in which a sealing ring 5c is positioned in the form of an O-ring. The sealing groove 4c and the sealing ring 5c are radially equidistant from the central axis of the cooling plate 3a circulating around the center of the cooling plate 3a arranged. Furthermore, the cooling plate 3a on their top 17 a valley 18 in the form of a depression 6 for receiving gas, which is located between back plate 8th and cooling plate 3a in the valley 18 includes, if the back plate 8th with the cooling plate 3a for example, with the help of at least one screw connection 19 firmly connected. In the embodiment according to 1 is only a screw connection 19 exemplified. It is possible that for fixing the sputtering target 1 on the cooling plate 3a For example, 2, 3, 4, 5 or more screw connections 19 are used, which are preferably symmetrical and equidistant from the center of the round Planar target on a circumferential radius suitable in the edge region of the back plate 8th to distribute.

The valley 18 itself thus forms between back plate 8th and cooling plate 3a a shallow basin in the manner of an air gap around the center of the sputtering target 1 out after fixing the back plate 8th and cooling plate 3a is spatially completed in itself to the environment. In this valley 18 For example, ambient air is trapped.

The hole 12a in the back plate 8th is in the embodiment according to 3 designed so that the hole 12a into the valley 18 enough, leaving the hole 12a only in the back plate 8th located, that is through the back plate 8th passes completely and diagonally to the bottom 14 the back plate 8th is arranged at an angle of about 45 °. Also goes according to previous comments this hole 12a through the tie layer as a hole 12c as part of the hole 12a completely through. The hole 12a ends in the previously described cave 15 in the area of the sputtering material 9 , As previously described, the sputtering target 1 prefers several holes 12a on. The cooling plate 3 points in the exemplary embodiment 3 no holes on.

According to 3 has the in 3 illustrated hole 12a a distance, according to the embodiment 3 is shown as hole spacing A2, from about 0.8 cm from the edge of the sputtering target 1 on, so that the hole 12a on one side in the area of the sink 18 located. The hole spacing A2 is between side edge 13 and end of the hole 12a that is in the area of the cave 15 , measured.

In 4 is a simplified illustrated device 2 shown in which a sputtering target 1 according to the 1 and 2 was attached so that sputtering could be done.

First, the device 2 and their in 4 illustrated new components described in detail. It will be relative to the sputtering target 1 and the device 2 on the comments too 1 and 2 directed.

In the embodiment according to 1 used round cooling plate 3 each adjacent to its outside to an insulator 20 which forms a ring shape by. The insulator 20 is on its outside relative to the center of the cooling plate 3 from a first sign 21 surrounded, thus the insulator 20 and the cooling plate 3 according to 4 also surrounds annular. The first sign 21 so to speak, it embeds the insulator in detail 20 and the cooling plate 3 one. According to previous comments 1 and to 2 is on the cooling plate 3 the sputtering target 1 attached. The cooling plate 3 is part of the device 2 and stays in this one. Only the sputtering target used 1 is in the device 2 exchanged at certain intervals and by a sputtering target 1 with at least new sputtering material 9 replaced. Alternatively, a new, unused sputtering target 1 with new backplate 8th and new sputter material 9 used and in the device 2 replaced.

It becomes the geometric design of the sputtering target 1 on the cooling plate 3 on the comments too 1 and 2 directed. In 4 are two holes 12 and two caves 15 presented as an example.

Between back plate 8th and cooling plate 3 is located according to the previous versions of cooling water 7 continuously during the operation of the device 2 through the depression 6 flows through and is replaced, so that a cooling of the sputtering target 1 is possible.

The sputtering material 9 is in 4 before loosening from the back plate 8th on the back plate 8th indicated by dashed lines. Also during assembly and in optimal operation is the sputtering material 9 at this dashed line indicated position. The sputtering material 9 , which is used for sputtering, thus located in the dashed line indicated position in a position in which the sputtering target 1 can be used for sputtering.

To explain the idea of the invention is one of the back plate 8th completely detached sputtering material 9 exemplified, due to the complete detachment from the back plate 8th Consequently, since only the back plate 8th with the help of two exemplified Pratzbefestigungen 16 on the cooling plate 3 had been attached. The fallen sputtering material 9 can not after sputtering in the arrangement after 4 be used.

At the first sign 21 adjoins another second sign 22 with the second sign 22 due to its geometric design according to 4 in the device 2 creates a funnel shape into which the fallen sputtering material 9 fallen into it. This sign 22 Also runs annular around the center of the cooling plate 3 according to 4 ,

On the closer, by the second shield 22 formed hopper side is a product to be sputtered, for example, a wafer 23 , The wafer 23 is for example made of silicon and is intended in the device 2 be coated by nickel.

In a sputtering with nickel, the respective wafers are preferred 23 into the funnel area of the second shield 22 according to 4 for example, clocked led. The shield 22 each is from a chamber wall 24 surrounded, so that it is possible, the exemplary illustrated wafer 23 sputtering in a vacuum inside the chamber wall 24 is formed opposite the environment. The area where no chamber wall 24 is present is through the first sign 21 , the insulator 20 , the cooling plate 3 , the sputtering material 9 and the back plate 8th demarcated from the environment. The first sign 21 and the second sign 22 consist for example of aluminum or an aluminum alloy. The terms "shield" are also known by the English term "shield".

The chamber wall 24 and the first sign 21 , the insulator 20 , the cooling plate 3 , the sputtering material 9 and the back plate 8th form a closed chamber 25 in the device 2 ,

It is thus possible in the device 2 a pressure difference over the outside of the device 2 prevailing ambient pressure in one outside the chamber 25 lying environment to produce, in the embodiment, a vacuum in the chamber 25 the device 2 , where the sputtering target 1 with the help of the sealing ring 5a in the sealing groove 4a towards the environment outside the device 2 and the ambient pressure prevailing there is sealed when, for example by means of a vacuum pump, the pressure difference from the ambient pressure in the form of a generated vacuum in the chamber 25 the device 2 has been generated.

The in 4 shown further sealing ring 5b in the sealing groove 4b ensures that the cooling water 7 not in the device 2 penetration can, in which the sealing ring 5b the depression 6 with the cooling water 7 seals.

The sputtering material 9 Furthermore, also forms a kind of seal that the respective hole 12 in the sputtering target 1 seals so that at the generated vacuum in the chamber 25 the device 2 no gas in the chamber 25 through the hole 12 or the holes 12 can occur when the sputtering material 9 according to 1 on the back plate 8th by means of the compound of solder layer 10 and coating 11a . 11b is connected, that is not detached.

By means of the holes 12b in the cooling plate 3 can determine if that in the device 2 positioned sputtering target 1 gas-tight in the device 2 is attached. For example, it is well known from the prior art that by means of helium a leak detection in the region of the respective holes 12 after mounting the sputtering target 1 in the device 2 according to 4 is feasible.

The following is the coating of a wafer 23 described by way of example, in which state the sputtering material 9 not yet from the back plate 8th has fallen off.

In the device 2 is initially a sputtering target 1 according to 1 to the back plate 8th attached. The attached sputtering material 9 in the sputtering target 1 is shown in dashed lines.

After the back plate 8th between the insulator 20 has been used and then a vacuum in the closed device 2 is generated between wafers 23 and sputtering target 1 generates a voltage potential, so that the nickel ions from the sputtering material indicated by dashed lines 9 be generated on the wafer 23 , in particular the sputtering material 9 opposite surface of the wafer 23 to be sputtered.

It is well known that about 10 ^-3 bar are used as a vacuum for sputtering, wherein the ions for dissolving out the nickel ions from the sputtering material indicated by dashed lines 9 be generated by means of a gas in the chamber, such as argon.

These ions dissolve from the sputtered material indicated by dashed lines 9 Nickel ions according to the well-known from the prior art sputtering method, which then due to the voltage potential between wafer 23 and sputtering target 1 on the wafer 23 be accelerated and coat this. Before and after sputtering, the chamber points 25 in the embodiment, a vacuum pressure of about 10 ^-5 bar.

Due to technical events, such as overheating of the sputtering material 9 , falls during the process indicated by dashed lines sputter material 9 from the back plate 8th in the direction of wafers 23 and gets through the funnel-shaped second shield 22 intercepted, leaving it on the second shield 22 according to 4 rests. A sputtering of the wafer 23 is currently no longer in the device 2 possible. The above-described condition due to the dropping of the sputtering material 9 is usually in the system parameters and by means of the sensors of the system or device 2 not recognized. Consequence is that continue to wafer 23 be introduced in the system intermittently, and these can not be sputtered, since the sputtering material 9 has fallen off and no tension on this sputtering material 9 is applied. The idea of the invention is to prevent the previously described by carrying out the effect described below:
Through the respective holes 12 . 12a . 12b in the cooling plate 3 and the back plate 8th occurs at the moment where a detachment of the sputtering material 9 from the back plate 8th takes place, a gas inlet from the ambient air located outside the environment in the interior of the device 2 one. This pressure change is for example by a in the device 2 existing measuring device for measuring the vacuum pressure measured as a rapid increase in pressure, for example, from 10 ^-3 bar to 10 ^-2 bar due to the supplied ambient air through the at least one exposed hole 12 arises. In the final state, the ambient pressure will be about 1 bar in the chamber 25 set as the chamber 25 and the environment is in equilibrium by gas exchange. It can be assumed in the exemplary embodiment that the vacuum pump does not compensate for the pressure increase. Through the two arrows in 4 in the area of the holes 12 is exemplified by the gas inlet at each hole 12 in the chamber 25 shown.

It is thus according to the example in 4 illustrated device 2 possible, releasing a sputtering material 9 from a back plate 8th to recognize, in which the at least one hole 12a in the back plate 3 has been exposed so that between bottom of the back plate 8th and top of the back plate 8th through the respective hole 12 through an exchange of gas due to the negative pressure in the chamber 25 is carried out. This is a release of the connection between the back plate 8th and sputtering material 9 with the help of at least one exposed hole 12 ascertainable.

Not shown in 4 is a sputtering target 1 according to 3 , If such a sputtering target 1 according to 3 in a device according to 4 the sputtering material 9 it dissolves, with the help of the gas in the sink 18 a pressure change in the chamber 25 triggered as the gas in the sink 18 through the at least one hole 12a in the chamber 25 the device 2 according to 4 flows when the sputtering material 9 completely or partially from the back plate 8th replaces. If completely detached, the sputter material will fall 9 in the direction of the second sign 22 ,

LIST OF REFERENCE NUMBERS

1

sputtering Target

2, 2a

contraption

3, 3a

cooling plate

4a, 4b, 4c

seal groove

5a, 5b, 5c

sealing ring

6

deepening

7

cooling water

8th

backplate

9

sputter

10

solder layer

11a, 11b

coating

12

hole

12a (in the area of the back plate)

hole

12b (near the cooling plate)

hole

12c (in the region of the connecting layer as part of the hole 12a)

hole

13

side edge

14 (the back plate)

bottom

15

cave

16

Pratzbefestigung

17 (the cooling plate)

top

18

depression

19

screw connection

20

insulator

21

First sign

22

Second sign

23

wafer

24

chamber wall

25

chamber

26

gap

A1, A2

hole spacing

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 102008046443 A1 [0002, 0002]
• DE 4426751 A1 [0003]

Claims (20)

Sputtering target ( 1 ), in particular round or angular Planar target, with a carrier, in particular with a back plate ( 8th ), and a sputtering material ( 9 ), wherein the carrier with the sputtering material ( 9 ), characterized in that at least the support at least one through the support completely passing hole ( 12 . 12a ), so that by means of the hole ( 12 . 12a ) a release of the connection between carrier and sputtering material ( 9 ) is detectable. Sputtering target ( 1 ) according to claim 1, characterized in that the hole ( 12 ) is a bore. Sputtering target ( 1 ) according to claim 1 or claim 2, characterized in that the hole ( 12 . 12a ) is positioned in the carrier perpendicular to the surface of the carrier base or is positioned at an angle between 0 ° and 90 °, preferably from 30 ° to 60 °, relative to the surface of the carrier base. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the hole ( 12 . 12a ) has a round, oval, elliptical, rectangular, square shape or a combination of previous shapes. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the hole ( 12 . 12a ) passes through the carrier with the same dimensions. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the hole ( 12 . 12a ) has a diameter of 0.1 mm to 30 mm, preferably of 0.5 mm to 1.5 mm, in particular of about 1 mm. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the carrier has four to twelve holes, preferably eight holes. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that between carrier and sputtering material ( 9 ) is additionally applied a bonding layer, wherein the bonding layer, a component or a combination of different components, preferably a solder layer ( 10 ) and a coating ( 11a . 11b ) in each case in the region of the carrier and the sputtering material ( 9 ), wherein the coating ( 11a . 11b ) to the solder layer ( 10 ) each adjacent. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the hole ( 12 . 12a ) is positioned from a support side edge at a distance of 0.3 cm to 40 cm, preferably 0.5 cm to 2 cm, in particular about 0.8 cm. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the sputtering material ( 9 ) and / or the connecting layer also the hole ( 12 . 12a ) exhibit. Sputtering target ( 1 ) according to one of the preceding claims, characterized in that the round planar target has a diameter of 100 mm to 500 mm, preferably of about 310 mm. Contraption ( 2 ) for attaching a sputtering target ( 1 ) according to one of claims 1 to 11 on a holding plate, preferably on a cooling plate ( 3 ), wherein the holding plate or the sputtering target ( 1 ) at least two sealing grooves ( 4a . 4b ), in each of which a sealing ring ( 5a . 5b ), characterized in that the retaining plate at least one through the retaining plate completely through hole ( 12 . 12b ), wherein the hole ( 12 . 12b ) between the two sealing grooves ( 5a . 5b ) is positioned. Contraption ( 2 ) according to claim 12, characterized in that the retaining plate on the top ( 17 ) of the holding plate at least one recess ( 6 ), preferably a depression ( 6 ) for receiving coolant, preferably cooling water ( 7 ), having. Contraption ( 2a ) for attaching a sputtering target ( 1 ) according to one of claims 1 to 11 on a holding plate, preferably on a cooling plate ( 3a ), wherein the holding plate or the sputtering target ( 1 ) at least one sealing groove ( 4c ), in which a sealing ring ( 5c ), characterized in that the retaining plate on the upper side ( 17 ) of the holding plate at least one recess ( 6 ), preferably a sink ( 18 ) for receiving gas, preferably ambient air. Contraption ( 2 . 2a ) according to any one of claims 11 to 14, characterized in that in the device ( 2 . 2a ) the carrier independently of the sputtering material ( 9 ) is fastened, preferably the carrier by means of at least one Pratzbefestigung ( 16 ) or at least one screw connection ( 19 ) on the holding plate independently of the sputtering material ( 9 ) is attachable. Contraption ( 2 . 2a ) according to any one of claims 11 to 15, characterized in that in the device ( 2 . 2a ) a pressure difference relative to an ambient pressure, preferably a vacuum, can be generated, wherein the sputtering target ( 1 ) by means of a sealing ring ( 5a . 5c ) is sealed against an environment and the prevailing ambient pressure there, when the pressure difference with respect to the ambient pressure, preferably the vacuum, in the device ( 2 . 2a ) is generated. Method for detecting the detachment of a sputtering material ( 9 ) of a carrier, in particular a back plate ( 8th ), a sputtering target ( 1 ) according to one of claims 1 to 11 with the aid of a device ( 2 . 2a ) according to any one of claims 12 to 16, characterized in that when completely or partially releasing the sputtering material ( 9 ) from the support at least one hole ( 12 . 12a ) is exposed in the carrier, so that between underside ( 14 ) of the carrier and top of the carrier through the hole ( 12 . 12a ) is carried out through an exchange of gas. Method for producing a sputtering target ( 1 ) according to one of claims 1 to 11 for detecting the release of a sputtering material ( 9 ) of a carrier, in particular a back plate ( 8th ), a sputtering target ( 1 ), characterized in that the carrier and the sputtering material ( 9 ) by means of a bonding layer, preferably by means of a bonding layer comprising a component or comprising a combination of different components, preferably comprising a solder layer ( 10 ) and having a coating ( 11a . 11b ) in each case in the region of the carrier and the sputtering material ( 9 ), and then through at least one hole ( 12 . 12a ) in the area of the support at least one hole ( 12 . 12c ) into the tie layer or through the tie layer completely therethrough and / or at least one cavity ( 15 ) into the sputtering material ( 9 ) is introduced, is preferably drilled. Method for producing a sputtering target ( 1 ) according to claim 18, characterized in that before the introduction of the hole ( 12 . 12c ) in the tie layer or through the tie layer completely therethrough and / or the cavity ( 15 ) in the carrier, preferably in the back plate ( 8th ), first at least one hole completely through the support ( 12 . 12a ), is preferably drilled, this introduced hole ( 12 . 12a ) into the subsequently inserted hole ( 12 . 12c ) and / or in the subsequently introduced cave ( 15 ). Method for producing a sputtering target ( 1 ) according to claim 18 or claim 19, characterized in that the hole ( 12 . 12a ) in the carrier, preferably in the back plate ( 8th ) is closed by means of a sticker before joining by means of connecting layer, in particular is covered.

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