DE102013111906A1 - Optoelectronic component and method for operating an optoelectronic component - Google Patents

Abstract

In various embodiments, an optoelectronic device (100) is provided having the optoelectronic device comprising: a first electrode (110), a second electrode (114), an organic functional layer structure (112), and wherein the organic functional layer structure (112) is interposed between the the first electrode (110) and the second electrode (114) are formed, and wherein the organic functional layer structure (112) is adapted to convert an electrical current into an electromagnetic radiation and emit; and wherein at least the first electrode (110) has at least a first electrode region (110A) and a second electrode region (110B); and a control device (302) which is set up to provide (402) at least one first electrical current (412) in the first electrode region (110A) and / or to provide (402) at least one second electrical current to the second electrode region ( 110B), wherein the first electrical current (412) and / or the second electrical current (514) comprise current pulses (434, 438); and changing (404) the first electrical current (412) and / or the second electrical current (414) such that the total emission (416) of the electromagnetic radiation is time-varying.

Description

In various embodiments, an optoelectronic device and a method for operating an optoelectronic device are provided.

Organic-based optoelectronic components, for example organic light-emitting diodes (OLEDs), are finding widespread application in general lighting, for example as a surface light source.

An organic opto-electronic device, such as an OLED, may include an anode and a cathode having an organic functional layer system therebetween. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each consisting of two or more charge generating layers, CGL ) for charge carrier pair generation, as well as one or more electron block layer (s), also referred to as hole transport layer (HTL), and one or more hole block layer (s), also referred to as electron transport layer (s) (ETL) ) to direct the current flow.

In a conventional method for the targeted production of images. or inhomogeneities with organic light-emitting diodes, the first electrode is contacted by holes that pass through the entire OLED. This can be applied to each contacted point of the second electrode, a different voltage.

In a further conventional method for the targeted production of images or inhomogeneities electrical busbars (busbars) are used, which are applied at an uneven distance from each other.

In a further conventional method for the targeted generation of images or inhomogeneities, an organic light-emitting diode is formed as an OLED display. These are able to map any distributions. However, OLED displays are darker and more expensive than simple OLEDs.

In various embodiments, an optoelectronic component and a method for operating an optoelectronic component are provided, with which it is possible to represent temporally variable different homogeneous or deliberately inhomogeneous luminance distributions, which would not be reproducible without this method, for example.

In various embodiments, an optoelectronic device is provided, comprising the optoelectronic component: a first electrode, a second electrode, an organic functional layer structure, and wherein the organic functional layer structure is formed between the first electrode and the second electrode, and wherein the organic functional layer structure is configured to convert an electrical current into electromagnetic radiation and emit; and wherein at least the first electrode has at least a first electrode region and a second electrode region; and a control device configured to provide at least one first electrical current into the first electrode region and / or to provide at least one second electrical current to the second electrode region, wherein the first electrical current and / or the second electrical current has current pulses. s; and changing the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is temporally variable.

A first electric current and a second electric current may in various embodiments be understood as different currents at the electrode regions of the electrode, for example as two or more different electric currents at the two or more contacts or electrode regions of an electrode. These currents can be arbitrarily modulated, for example by means of pulse width modulation. In various embodiments, the electrode may have more than two electrode regions or contact for energizing and be energized with more than two electrical currents, for example, have three, four, five, six or more electrode areas and / or with three, four, five, six or more electrical currents are energized.

In one embodiment, the first electrode can be or be formed such that the first electrode region is at least partially electrically insulated from the second electrode region, for example by means of a dielectric layer or an air bridge.

In one configuration, the first electrode can be or be formed such that the first electrode region is electrically connected to the second electrode region by an electrical resistance.

In one embodiment, the electrical resistance may be the sheet resistance of the first electrode.

In one embodiment, the first electrode may be formed as an anode and the second electrode as a cathode or be.

In one embodiment, the first electrode may be formed as a cathode and the second electrode as an anode or be.

In one embodiment, the first electrode may comprise or be formed from a transparent electrically conductive oxide, for example an electron-conducting or hole-conducting transparent or translucent oxide.

In one embodiment, the first electrode can comprise or be formed from a metal, for example an electron-conducting or hole-conducting transparent or translucent metal oxide or an opaque metal.

In one embodiment, the first electrode may be formed on or above the organic functional layer structure.

In one embodiment, the organic functional layer structure may be formed on or above the first electrode.

In one embodiment, the first electrode may be formed in the organic functional layer structure, for example as an intermediate electrode.

In one embodiment, the first electrode can have vias through the organic functional layer structure or be electrically connected to vias, for example, in an optoelectronic device, which is designed as a so-called bottom emitter, in which the first electrode is transparent, the organic functional layer structure is formed of the first electrode and the first electrode is electrically contacted by means of the vias through the organic functional layer structure.

In one embodiment, at least one via can be formed in approximately the planar center of the planar organic functional layer structure. Thereby, a control of the center of the luminous area can be made possible, for example by an electrode contact with the one or more vias in the middle of the luminous area is electrically connected. The structure that provides electrical current to the via should have a smaller sheet resistance than the electrode region that is electrically connected to the via.

In one embodiment, the control device may comprise an electrical memory by means of which a plan for controlling the first electric current and the second electric current is stored.

In one embodiment, the control device can have an input connection by means of which a plan for controlling the first electric current and the second electric current can be entered.

In one embodiment, the control device may be configured such that the first electric current and / or the second electric current have a direct current and / or an alternating current.

In one embodiment, the control device may be configured such that the first electric current and the second electric current differ in at least one of the following characteristics; the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.

In one embodiment, the control device may be configured such that changing the first electrical current and / or the second electrical current has a pulse modulation, for example a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

In one embodiment, the control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the color locus of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component.

In an embodiment, the control device may be configured such that the first electrical current and / or the second electrical current is / are changed in such a way that the brightness of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component. The locally emitted electromagnetic radiation can affect the position on the luminous area, i. H. the optically active surface, the optoelectronic component, from which the electromagnetic radiation is emitted.

In an embodiment, the control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the color saturation of the emitted electromagnetic radiation is temporally variable from the optoelectronic component.

In various embodiments, there is provided a method of operating an optoelectronic device as described above, the method comprising: providing at least a first electrical current into the first electrode region and / or providing at least a second electrical current into the second electrode region, wherein the first electrical current and / or the second electric current has current pulses; and changing the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is temporally variable.

In various embodiments of the method, the first electric current and / or the second electrical current can / have a direct current and / or an alternating current.

In various embodiments of the method, the first electrical current and the second electrical current may differ in at least one of the following properties: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.

In various embodiments of the method, changing the first electrical current and / or the second electrical current may comprise a pulse modulation, for example a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

In various embodiments of the method, the first electrical current and / or the second electrical current can be changed such that the color locus of the emitted electromagnetic radiation is locally variable in time from the optoelectronic component.

In various embodiments of the method, the first electrical current and / or the second electrical current can be changed such that the brightness of the emitted electromagnetic radiation is locally variable in time from the optoelectronic component.

In various embodiments of the method, the first electrical current and / or the second electrical current can be changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time from the optoelectronic component.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A -D schematic representations of optoelectronic devices according to various embodiments;

2 a schematic representation of an optoelectronic component according to various embodiments;

3A B shows schematic representations of optoelectronic components according to various embodiments; and

4A -C schematic for a method for operating an optoelectronic component according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In various embodiments, optoelectronic components are described, wherein an optoelectronic component has an optically active region. The optically active region can emit electromagnetic radiation by means of an applied voltage to the optically active region. In various embodiments. can the electromagnetic radiation a Have wavelength range, the X-ray radiation, UV radiation (AC), visible light and / or infrared radiation (AC) has.

A sheet-like optoelectronic component which has two flat, optically active sides can, for example, be transparent or translucent in the connecting direction of the optically active sides, for example as a transparent or translucent organic light-emitting diode. A planar optoelectronic component can also be referred to as a planar optoelectronic component.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode which is set up as a so-called top emitter or bottom emitter. The optically inactive side may be transparent or translucent in various embodiments, or be provided with a mirror structure and / or an opaque substance or mixture of substances, for example for heat distribution. The beam path of the optoelectronic component can be directed, for example, on one side.

In the context of this description, provision of electromagnetic radiation can be understood as meaning emission of electromagnetic radiation. In other words, providing electromagnetic radiation may be understood as emitting electromagnetic radiation by means of an applied voltage to an optically active region.

A structure emitting electromagnetic radiation (optically active structure) may in various embodiments be an electromagnetic radiation emitting semiconductor structure and / or as an electromagnetic radiation emitting diode, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as an organic one be formed electromagnetic radiation emitting transistor. The electromagnetic radiation emitting device may, for example, as a light emitting diode (light emitting diode, LED), as an organic light emitting diode (organic light emitting diode, OLED), as a light emitting transistor or as an organic light emitting transistor, for example, an organic field effect transistor (organic field effect transistor OFET) and / or organic electronics. The organic field effect transistor may be a so-called "all-OFET" in which all layers are organic. The electromagnetic radiation emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of electromagnetic radiation emitting components may be provided, for example accommodated in one. common housing. An optoelectronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic functional layer structure may include or may be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a provided electrical current.

An organic light-emitting diode 200 may be configured as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active region through the carrier. In a top emitter, light is emitted from the top of the electrically active region and not by the carrier.

A top emitter and / or bottom emitter can also be optically transparent or optically translucent, for example, each of the layers or structures described below can be made transparent or translucent.

The optically active time of an optoelectronic component is the time in which an optically active structure emits electromagnetic radiation.

The optically inactive time of an optoelectronic component is the time in which an optically active structure does not emit electromagnetic radiation.

The duty cycle (MUX) indicates the ratio of the optically inactive time to the optically active time in a drive interval. For example, an optically active structure at a duty cycle of 2 (MUX = 2) per drive interval to 50% of the time of the drive interval optically inactive (unpowered) and emits electromagnetic radiation in 50% of the time of the drive interval.

In a pulsed control of the optoelectronic component, the optically active time can be determined, for example, by means of a mathematical convolution of the pulse widths and the pulse repetition frequency in a control interval.

The maximum pulse amplitude or pulse height can be understood as the location of a pulse of electromagnetic radiation at which the pulse has the highest luminance.

In various embodiments, an opto-electronic device 100 provided - illustrated in 1A to 1D , The optoelectronic component 100 can be a first electrode 110 , a second electrode 114 and an organic functional layer structure 112 on or over a carrier 102 exhibit.

The organic functional layer structure 112 can be between the first electrode 110 and the second electrode 114 be educated. The organic functional layer structure 112 may be configured to convert an electrical current into electromagnetic radiation and emit. Embodiments of the organic functional layer structure 112 , the electrodes 110 . 114 and the vehicle 102 are illustrated in the description below.

At least the first electrode 100 may be at least a first electrode area 110A and a second electrode area 110E exhibit.

The first electrode 110 can a structure 132 comprising the first electrode region 110A from the second electrode region 110E electrically and / or physically separated from each other. The structure 132 For example, it may be an electrical resistor and / or a dielectric. In other words: the first electrode 110 may be formed or be such that the first electrode region 110A is electrically isolated from the second electrode region 110B , for example by means of a dielectric structure 132 an air gap 132 and / or a glass structure 132 for example, by leaving a gap in the first electrode 110 is trained. The first electrode 110 may be formed or be such that the first electrode region 110A through an electrical resistance 132 with the second electrode area 110B electrically connected. The electrical resistance can be, for example, the sheet resistance of the first electrode 110 be.

The first electrode 110 can be used as anode and the second electrode 114 be formed as a cathode or be. The first electrode 110 however, can also act as a cathode and the second electrode 114 be designed as an anode or be. The first electrode 110 may comprise or be formed from a transparent electrically conductive oxide and / or a metal.

The first electrode 110 can be on or above the organic functional layer structure 112 be formed (illustrated in 3A -C) and / or the organic functional layer structure 112 can be on or above the first electrode 110 be formed (illustrated in 1D ), for example, the first electrode 110 be formed as an intermediate electrode (interlayer structure - see description below) in the organic functional layer structure. The first electrode 110 can make vias through the organic functional layered structure 112 have or be electrically connected to such. At least one via can, in one embodiment, be located in approximately a planar center of the planar organic functional layer structure 112 be educated.

The first electrode 110 can from the second electrode 114 by means of an electrical insulation 130 be electrically isolated. The electrical insulation may include, for example, a polyimide or be formed therefrom.

The optoelectronic component 100 can by means of a contact area 134A , B, for example in the form of a contact pad, a contact strip and / or an electrical busbar (busbar) to be electrically connected to a control device. The first electrode area 110A can, for example, with a first contact area 134A and the second electrode area 110B with a second contact area 134E be electrically connected.

The at least two contact areas 134A . 134B For example, they can be side by side and / or on opposite sides in edge regions of the first electrode 110 be arranged (illustrated in 1B , C). The first electrode 110 and the organic functional layer structure 112 may be formed such that the entire luminous area with each contact area 134A . 134B can be energized alone.

The first electrode 110 , the second electrode 114 and / or further electrodes, for example an intermediate electrode, can each have two or more electrode regions 110A , B and / or contact areas 110B have, for example, two to five, independently energizable electrode areas 110A , B. Independently from each other bestrombare electrode areas each have individual, electrically isolated contact terminals with a control device (see also description of 3 , below).

The two or more terminals of an electrode 110 . 114 can be energized with different currents, which can vary over time. The different currents can, for example, have different voltages, current strengths, current densities and / or pulse modulations. As a result, an adjustable luminance distribution can be formed. This adjustable luminance distribution and other luminance distributions, which correlate with other applied voltages, can be determined by means of a pulse modulation, for example a pulse width modulation (PWM), pulse amplitude modulation (PAM) and / or a pulse width modulation. Frequency modulation (PFM); be superimposed optically. As a result, an almost arbitrary luminance distribution can be generated. A luminance distribution can be characterized by means of the color location, the polarization, the brightness, the color saturation and / or the luminance gradient of an emitted electromagnetic radiation.

The electrode 110 . 114 with several electrode areas energized with different currents 110A . 110B Thus, an electrical voltage between the electrode areas 110A . 110B have, ie within the electrode 110 . 114 , As electrical voltage at an electrode area 110A . 110B the first electrode 110 For example, the electric potential can be understood that with respect to the second electrode 114 is trained.

The second electrode 114 can be at a fixed electrical potential. More precisely: the connections of the second electrode 114 can be at a fixed electrical potential. Due to the sheet resistance of the second electrode 114 can be formed in the second electrode, a current distribution. The same applies to the first electrode 110 , The potential at the electrode areas 110A . 110B may be different in time and with each other, for example, in that the time variation of the electrical voltages differs. It may be possible at a certain time at the electrode areas 110A . 110B the same voltage is applied, wherein the further change of the voltage applied to each other is different.

The respective time-varying electrical voltage of the electrode areas 110A . 110E can taking into account the sheet resistance 132 the first electrode 110A and the associated voltage drop in the first electrode 110 as a function of a distance from the external electrical contacts in the contact areas 134A , B cause a spatially and temporally varying current density distribution of the current. This current density distribution can be impressed into the organic functional layer structure, ie converted into a luminance distribution.

The different voltages at the at least two electrode areas 110A , B can cause different luminance in different surface and edge areas of the luminous area. The different luminances may vary from each other over time. As a result, a temporally and spatially varying luminance distribution over the luminous area of the optoelectronic component 100 be caused.

The temporal variation of the different electrical voltages can, during operation of the optoelectronic component, lead to a perceptible temporal and spatial variation of the luminance distribution of one of the optoelectronic component for an observer 100 emitted electromagnetic radiation.

The variation can be with the choice of electrical currents in the electrode areas 110A , B are varied so that they are perceptible or resolvable for the observer in their strength and frequency. This allows the optoelectronic component 100 a variable electromagnetic radiation, ie electromagnetic radiation with a temporally and spatially varying luminance distribution, are emitted. This can be more pleasant in lighting applications than a temporally and spatially homogeneous and constant luminance distribution.

For example, in the case of an observer, the impression of a wave or cloud movement or the flickering of candles or flames can be caused by means of the temporal change in the total emission of the optoelectronic component. For example, changes with a frequency of less than or equal to 10 Hz or less than or equal to 5 Hz and greater than or equal to 0.5 Hz may be suitable.

An optoelectronic component 100 in the form of an organic light-emitting diode may have a non-linear luminance-voltage characteristic. Furthermore, the optoelectronic component can have a complex geometric shape, for example, have a geometrically complex-shaped optically active surface. As a result, some luminance distributions, which correspond to different voltage values, can not be displayed in constant operation of the organic light-emitting diodes by means of a linear combination of voltages. However, these can be represented by means of an optical overlay of different images via pulse modulation. As a result, luminance distributions (PWM images) can be displayed that can not be displayed even with many different voltages applied. The resulting images can also be displayed in a temporal sequence. These can be different overlays and voltage distributions of a control device 302 (illustrated in 3 ) successively from the optoelectronic component 100 For example, in analogy to the terms of Fourier series, the terms of the superposition are not linearly independent as in Fourier series.

The first electrode 110 , the second electrode 114 and the organic functional layer structure 112 can each be designed over a large area. This allows the optoelectronic component 100 have a continuous luminous surface, which is not structured into functional subregions, for example a luminous surface segmented into functional regions, or a luminous surface which is formed by a plurality of pixels. As a result, a large-area radiation of electromagnetic radiation from the optoelectronic component can be made possible. "Large area" can mean that the optically active side has an area, for example a contiguous area, for example greater than or equal to a few square millimeters, for example greater than or equal to one square centimeter, for example greater than or equal to one square decimeter. For example, the optoelectronic component 100 have only a single contiguous luminous surface, by the large-scale and contiguous formation of the electrodes 110 . 114 and the organic functional layer structure 112 is effected.

In one embodiment, the optoelectronic component can have a large luminous area. A large luminous area may be, for example, a square area with an edge length of more than 10 cm or more than 20 cm or more than 25 cm or more than 50 cm. Furthermore, the large luminous area can also have a different shape, for example a rectangular or round shape, with a corresponding surface area.

The voltage drop in the electrode areas increases as a function of the distance to the contact areas 134A . 134B and is approximately proportional to the distance of the contact terminals at the electrode areas 134A , B. Thus, the voltage drop increases in proportion to the size of the luminous area. By means of an enlargement of the luminous area, an amplification of the luminance unambiguity on the luminous area can be achieved.

The organic functional layer structure 112 may be formed such that it has a high voltage sensitivity. Depending on the organic material used, a high voltage sensitivity can be achieved, for example, by virtue of the fact that the organic functional layer structure has two or more emitter layers, between which no interlayer structure (see description of FIG 2 , below) is formed.

The at least two emitter layers can be formed, for example, to emit electromagnetic radiation with the same color locus, that is, for example, both red, yellow, green or blue light. However, the emitter layers can also emit electromagnetic radiation having different properties, for example emit differently colored light, for example red and yellow light or red and green light.

For example, two emitter layers may be directly adjacent to each other and adjacent to each other. An intermediate layer can reduce the voltage sensitivity. Between one of the electrodes 110 . 114 and the emitter layers may be formed at least two energy barrier structures. The energy barrier structures can be designed as an energy barrier for charge carriers in the direction of the emitter layers, for example with an energy level of approximately 0.1 eV. Charge carriers may be on the way from the electrode 110 . 114 to overcome the energy barrier to the emitter layers. An organic functional layer structure with an energy barrier structure for charge carriers in the direction of the emitter layer can cause the organic functional layer structure to have a dependence of the color locus of the emitted electromagnetic radiation on the applied operating voltage. The color locus may be dependent on the number of photons generated in each of the at least two emitter layers. Charge carrier from one of the electrodes 110 . 114 overcome an energy barrier in the direction of the emitter layers. The number of charge carriers that overcome the energy barrier may be dependent on the operating voltage across the electrodes 110 . 114 , These charge carriers can recombine in the emitter layer closer to the energy barrier structure with oppositely charged charge carriers. As a result, fewer charge carriers can be available for recombination in an emitter layer further from the energy barrier structure.

When the operating voltage is increased, more charge carriers can pass from the energy barrier structure through the nearest emitter layer to an emitter layer arranged behind it. As a result, the emitter layer arranged behind it can produce more photons relative to the closer emitter layer.

For an organic functional layer structure 112 With emitter layers which emit electromagnetic radiation having a different color location, the relative intensity of the electromagnetic radiation emitted by the emitter layers can be varied by means of the variation of the current through the organic functional layer structure corresponding to the operating current density.

The variation may be, for example, by means of a voltage drop in the first electrode described above 110 and / or by a temporal Variation of the in the electrodes 110 . 114 provided electric power can be achieved. The organic functional layer structure 112 can thus be designed such that by means of changing the currents in the first electrode region 110A and / or in the second electrode area 110B a variation of a color gradient over the luminous area is achieved.

A suitable choice of surface resistances of the first electrode 110 and the second electrode 114 , the stress sensitivity of the organic functional layer stack 112 and the size of the luminous area or of the optoelectronic component can influence the intensity of the luminance inhomogeneity.

The optoelectronic component 100 can be a hermetically sealed substrate 228 , an active area 206 and an encapsulation structure 226 have (illustrated in 2 ).

The hermetically sealed substrate may be the carrier 102 and a first barrier layer 204 exhibit.

The active area 206 is an electrically active area 206 and / or an optically active region 206 , The active area 206 is, for example, the range of the optoelectronic component 100 in which electrical current for operation of the optoelectronic component 100 flows and / or generated and / or absorbed in the electromagnetic radiation.

The electrically active area 206 can be the first electrode 110 , the organic functional layer structure 112 and the second electrode 114 exhibit.

The organic functional layer structure 206 may comprise one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units. The organic functional layer structure 112 For example, a first organic functional layered structure unit 216 , an interlayer structure 218 and a second organic functional layer structure unit 220 exhibit.

The encapsulation structure 228 can be a second barrier layer 208 , a coherent connection layer 222 and a cover 224 exhibit.

The carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material. Furthermore, the carrier can 102 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN).

The carrier 102 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.

The carrier 102 can be opaque, translucent or even transparent.

The carrier 102 may be part of or form part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or may be formed in such a way, for example as a foil.

The carrier 102 may be formed as a waveguide for electromagnetic radiation, for example, be transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the optoelectronic component 100 ,

The first barrier layer 204 may be or comprise any of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantala, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

The first barrier layer 204 may be formed by one of the following methods: Atomic Layer Deposition (ALD), for example, Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma-less Atomic Layer Deposition (PLALD); a chemical vapor deposition (CVD) process, for example, plasma enhanced chemical vapor deposition (PECVD) or plasmaless plasma vapor deposition (PLCVD); or alternatively by other suitable deposition methods.

At a first barrier layer 204 having multiple sublayers, all sublayers can be formed by an atomic layer deposition method. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

At a first barrier layer 204 comprising a plurality of sublayers may include one or more sublayers of the first barrier layer 204 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The first barrier layer 204 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example, about 40 nm according to an embodiment.

The first barrier layer 204 may comprise one or more high refractive index materials, for example, one or more materials having a high refractive index, for example having a refractive index of at least 2.

Furthermore, it should be pointed out that in various embodiments also entirely on a first barrier layer 204 can be omitted, for example in the event that the carrier 102 hermetically sealed, for example, comprises glass, metal, metal oxide or is formed therefrom.

The first electrode 204 may be formed as an anode or as a cathode.

The first electrode 110 may comprise or be formed from one of the following electrically conductive material: a metal; a conductive transparent oxide (TCO); a network of metallic nanowires and particles, such as Ag, combined, for example, with conductive polymers; a network of carbon nanotubes combined, for example, with conductive polymers; Graphene particles and layers; a network of semiconducting nanowires; an electrically conductive polymer; a transition metal oxide; and / or their composites. The first electrode 110 of metal or metal may include or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials. The first electrode 110 For example, as the transparent conductive oxide, it may have any of the following materials: for example, metal oxides: for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds, such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

The first electrode 110 may comprise a layer or a layer stack of multiple layers of the same material or different materials. The first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

The first electrode 204 For example, it may have a layer thickness in a range from 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 110 may have a first electrical connection to which a first electrical potential can be applied. The first electrical potential may be provided by a power source, such as a power source or a voltage source. Alternatively, the first electrical potential to an electrically conductive carrier 102 be created and the first electrode 110 through the carrier 102 be fed indirectly electrically. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In 2 is an optoelectronic device 100 with a first organic functional layered structure unit 216 and a second organic functional layered structure unit 220 shown. In various embodiments, the organic functional layer structure 112 but also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70.

The first organic functional layered structure unit 216 and optionally further organic functional layer structures may be the same or different, for example, have a same or different emitter material. The second organic functional layered structure unit 220 , or the Further organic functional layer structure units may be like one of the embodiments of the first organic functional layer structure unit described below 216 be educated.

The first organic functional layered structure unit 216 may comprise a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and an electron injection layer.

In an organic functional layered structure unit 112 one or more of said layers may be provided, wherein like layers may have physical contact, may only be electrically connected to each other, or may even be formed electrically insulated from each other, for example, formed side by side. Individual layers of said layers may be optional.

A hole injection layer may be on or over the first electrode 110 be educated. The hole injection layer may include one or more of the following materials exhibit or can be formed therefrom: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

On or above the hole injection layer, a hole transport layer may be formed. The hole transport layer may comprise or be formed from one or more of the following materials: NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and N, N, N ', N'-tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conductive polyaniline and / or polyethylenedioxythiophene.

The hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer, an emitter layer may be formed. Each of the organic functional layered structure units 216 . 220 may each have one or more emitter layers, for example with fluorescent and / or phosphorescent emitters.

An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, small organic non-polymeric molecules, or a combination of these materials.

The optoelectronic component 100 may include or be formed from one or more of the following materials in an emitter layer: organic or organometallic compounds, such as derivatives of Polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl) (2-carboxypyridyl) -iridium III), green phosphorescent Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ * 2 (PF ₆ ) (Tris [4,4 '] di-tert-butyl- (2,2 ') - bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters.

Such: non-polymeric emitters are for example deposited by means of thermal evaporation. Furthermore, it is possible to use polymer emitters which can be deposited, for example, by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxide; or a silicone.

In various embodiments, the emitter layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials. Alternatively, the emitter layer may comprise a plurality of sub-layers which emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layered structure unit 216 may include one or more emitter layers configured as a hole transport layer.

Furthermore, the organic functional layer structure unit 216 have one or more emitter layers, which is / are designed as an electron transport layer.

On or above the emitter layer, an electron transport layer can be formed, for example deposited.

The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2,2 ', 2' '- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthraline (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiaza-5-yl] benzene; 4,7-diphenyl-1,10-phenanthraline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

An electron injection layer may be formed on or above the electron transport layer. The electron injection layer may include or be formed from one or more of the following materials: NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF; 2,2 ', 2''- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10- di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.

For an organic functional layer structure 112 with two or more organic functional layered structure units 216 . 220 , the second organic functional layered structure unit 220 above or next to the first functional layered structure units 216 be educated. Electrically between the organic functional layer structure units 216 . 220 can be an interlayer structure 218 be educated.

In various embodiments, the interlayer structure 218 as an intermediate electrode 218 be formed, for example according to one of the embodiments of the first electrode 110 , An intermediate electrode 218 can be electrically connected to an external voltage source. The external voltage source can be at the intermediate electrode 218 For example, provide a third electrical potential. The intermediate electrode 218 However, it can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

In various embodiments, the interlayer structure 218 as a carrier pair generation layered structure 218 (charge generation layer CGL) be formed. A carrier pair generation layered structure 218 may comprise one or more electron-conducting charge carrier pair generation layers and one or more hole-conducting charge carrier pair generation layers. The electron-conducting charge carrier pair generation layers and the hole-conducting charge carrier pair generation layer (s) may each be formed from an intrinsically conductive substance or a dopant in a matrix. The carrier pair generation layer structure 218 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) such that separation occurs at the interface of an electron-conducting charge carrier pair generation layer with a hole-conducting charge carrier generation layer can be done by electron and hole. The carrier pair generation layer structure 218 may further comprise a diffusion barrier between adjacent layers.

Each organic functional layered structure unit 216 . 220 For example, it may have a layer thickness of at most approximately 3 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of approximately approximately 300 nm.

The optoelectronic component 100 Optionally, it may further comprise other organic functional layers, for example, disposed on or over the one or more emitter layers or on or over the one or more electron transport layer (s). The further organic functional layers can be, for example, internal or external coupling-in / coupling-out structures that control the functionality and thus the efficiency of the optoelectronic component 100 improve further.

On or above the organic functional layer structure 112 or optionally on or over the one or more further of the organic functional layer structure and / or organic functional layers, the second electrode 114 be educated.

The second electrode 114 may according to one of the embodiments of the first electrode 110 be formed, wherein the first electrode 110 and the second electrode 114 may be the same or different. The second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 114 may have a second electrical connection to which a second electrical potential can be applied. The second electrical potential may be provided by the same or a different energy source as the first electrical potential and / or the optional third electrical potential. The second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential. The second electrical potential may, for example, have a value such that the difference to the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example a value in a range from approximately 2.5 V to about 15 V, for example, a value in a range of about 3 V to about 12 V.

On the second electrode 114 may be the second barrier layer 208 be educated.

The second barrier layer 208 may also be referred to as thin film encapsulation (TFE). The second barrier layer 208 may according to one of the embodiments of the first barrier layer 204 be educated.

It should also be pointed out that, in various exemplary embodiments, it is also entirely a matter of a second barrier layer 208 can be waived. In such an embodiment, the optoelectronic component 100 For example, have a further encapsulation structure, whereby a second barrier layer 208 can be optional, for example, a cover 224 For example, a Kavitätsglasverkapselung or metallic encapsulation.

Furthermore, in various exemplary embodiments, one or more input / output layers in the optoelectronic component can additionally be provided 100 be formed, for example, an external Auskoppelfolie on or above the carrier 102 (not shown) or an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 100 , The input / outcoupling layer may have a matrix and scattering centers distributed therein, the average refractive index of the input / outcoupling layer being greater or smaller than the average refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, in various exemplary embodiments, one or more antireflection layers (for example, combined with the second barrier layer 208 ) in the optoelectronic component 100 be provided. In various embodiments, on or above the second barrier layer 208 a coherent connection layer 222 be provided, for example, an adhesive or a paint. By means of the coherent connection layer 222 can a cover 224 on the second barrier layer 208 be connected conclusively, for example, be glued.

A coherent connection layer 222 For example, particles that diffuse electromagnetic radiation, for example light-scattering particles, can comprise a transparent material. This allows the coherent connection layer 222 act as a scattering layer and lead to an improvement of the color angle distortion and the Auskoppeleffizienz.

Dielectric scattering particles may be provided as light-scattering particles, for example of a metal oxide, for example silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), Gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable provided they have a refractive index that is different from the effective refractive index of the matrix of the coherent bonding layer 222 is different, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

The conclusive connection layer 222 may have a layer thickness of greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the conclusive tie layer 222 include or be a lamination adhesive.

The conclusive connection layer 222 may be configured to include an adhesive having a refractive index that is less than the refractive index of the cover 224 , Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. However, the adhesive may also be a high-refractive adhesive having, for example, high refractive index non-diffusing particles and having a layer thickness average refractive index approximately equal to the average refractive index of the organically functional layered structure 112 corresponds, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

In various embodiments, between the second electrode 114 and the coherent link layer 222 or an electrically insulating layer (not shown), for example SiN, for example with a layer thickness in a range from about 300 nm to about 1.5 μm, for example with a layer thickness in a range from about 500 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, a conclusive tie layer may be used 222 be optional, for example, if the cover 224 directly on the second barrier layer 208 is formed, for example, a cover 224 made of glass, which is formed by means of plasma spraying.

On or above the electrically active area 206 Furthermore, a so-called getter layer or getter structure, for example a laterally structured getter layer, can be arranged (not shown).

The getter layer may include or be formed from a material that is harmful to the electrically active region 206 are, absorbs and binds. For example, a getter layer may include or be formed from a zeolite derivative. The getter layer may be translucent, transparent or opaque and / or impermeable to the electromagnetic radiation emitted and / or absorbed in the optically active region.

The getter layer may have a layer thickness of greater than approximately 1 μm, for example a layer thickness of several μm.

In various embodiments, the getter layer may comprise a lamination adhesive or in the final tie layer 222 be embedded.

On or above the coherent connection layer 222 can a cover 224 be educated. The cover 224 can by means of the coherent connection layer 222 with the electrically active area 206 be coherently connected and protect it from harmful substances. The cover 224 For example, a glass cover 224 , a metal foil cover 224 or a sealed plastic film cover 224 be. The glass cover 224 For example, by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the second barrier layer 208 or the electrically active area 206 be connected conclusively.

The cover 224 and / or the conclusive tie layer 222 may have a refractive index (for example at a wavelength of 633 nm) of 1.55.

Furthermore, the above-described optoelectronic component 100 a control device 302 Illustrated as equivalent circuit diagrams for an optoelectronic component with two electrode regions in FIG 3A and four electrode areas in 3B , The control device 302 can be set up by means of a power supply 304 a first electrical current (having a first current and a first voltage) into the first electrode region 110A and / or a second electrical current (having a second current and a second voltage) in the second electrode region 110E provide. The first electric current and / or the second electric current may / may have current pulses. The power supply 304 may be formed such that it is connected to the first electrode region 110A can provide a different electrical current than the second electrode region 110B , For example, the power supply 304 for the first electrode area 110A independent of the second electrode area 110E be controllable, for example, have electrically isolated from each other current outputs. For example, the power supply 304 a first power supply 304A and at least a second power supply 304B have, wherein the second power supply 304A can be electrically isolated from the first power supply. In the optoelectronic component 100 with four electrode areas in 3B For example, the first electrode region can / can 110 and / or the second electrode area 114 have several independently energetrable areas, for example a first electrode area 110 with four electrode areas 110A -D; and / or, for example, a first electrode area 110 with two electrode areas 110A , B and a second electrode area 114 with two electrode areas 114A , B. An electrode 110 with three or more electrode areas may have multiple structures 132A -C have according to described embodiments. The power supply 304 can be analogous to the description of 3B several independently controllable power supplies 304A Furthermore, the control device can be set up to change the first electrical current and / or the second electrical current such that the total emission of the electromagnetic radiation is time-variable. The control device 302 may include an electrical memory by means of which a plan for controlling the first electric current and the second electric current is stored. The control device may have an input port by means of which a plan for controlling the first electric current and the second electric current can be input.

The control device 302 may be arranged such that the first electric current and / or the second electric current have a direct current and / or an alternating current / t.

The control device may be configured such that the first electric current and the second electric current differ in at least one of the following characteristics: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.

The control device 302 may be configured such that changing the first electrical current forms a reverse voltage across the first electrode region 110A and the second electrode 114 and / or over the second electrode area 110B and the second electrode 114 have / t, for example providing a backward pulse.

The control device 302 may be arranged such that the changing of the first electric current and / or the second electric current comprises a pulse modulation, for example a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

The control device 302 may be arranged such that the first electric current and / or the second electric current is / are changed such that the color locus, the brightness and / or the color saturation of the emitted electromagnetic radiation is locally variable in time from the optoelectronic component.

In various embodiments, a method 400 for operating an optoelectronic device described above.

The method may be providing 402 (illustrated in 4A ) of a first electric current 412 (illustrated in 4B , C) in the first electrode area 110A and / or providing 402 a second electric current 414 in the second electrode region. The first electric current 412 and / or the second electric current 414 can generate current pulses 434 . 438 exhibit.

An electrical property of the optoelectronic component 100 can be described with a characteristic r, with: r ~ dV / dj (I), where V is an operating voltage and j is an operating current density and dV / dj is the mathematical derivative of the operating voltage according to the operating current density. The unit of r is Q cm ² . The quantity r describes the differential electrical resistance of an optoelectronic component 100 with a certain optically active surface. An increase in the area of the optoelectronic component can correspond to a parallel connection of resistors, in which the reciprocal values of the electrical resistances add up. By the relationship between r and the operating current density j according to the characteristic of the organic light emitting device in the thus determined operating point is assigned to r = r _A a (on the luminescent area averaged) operating current density j _A.

For the design of the characteristic of the optoelectronic component 100 For example, a reference component with an organic functional layer structure between two electrodes can be used, which with the organic functional layer structure 112 of the optoelectronic component 100 matches, but has the smallest possible optically active surface. In the thermally steady state, the reference component dV / dj can be used to determine the operating point r to be determined. The thermally steady state is reached for example after an operating time of the reference device for a period of about 10 minutes.

For operation of the device 100 If an operating point r = r _{A can} be chosen such that: 0.75 ≤ U ≤ 1, with U = (1-x) / (1 + x) (II), H = cosh ^-1 (L / A) (III), L = 0.5 × d (IV); with d the width of the luminous area, ie the distance between two contact surfaces 134A . 143B ; and A = (r / R) ^1/2 (V), where R is the sheet resistance of the first electrode 110 is.

The relationships for U, H, and A can be derived from an analytic model. In the model, strip OLEDs can be considered. Comparisons with simulations have shown that the analytical model underlying the relationships described above describes the behavior of the organic light-emitting device with sufficient accuracy.

The size A denotes a characteristic length resulting from the sheet resistance R of the first electrode 110 and the operating point r.

The smaller the parameter H, the smaller the parameter U and the stronger the voltage drop across the luminous area and the greater the luminance gradient in the luminous area.

The following numerical values are to be understood as purely exemplary and not restrictive. At a sheet resistance R = 15 Q / □ of the first electrode 110 and a component width of d = 2.8 cm, for example, the first operating point r = r _A1 = 70 Qcm ² and the second operating point r = r _A2 = 35 Qcm ² selected. This results in the first operating point r = r _A1 for A = 2.16, H = 0.82 and U = 0.92, while for the second operating point r = r _A2 the values A = 1.53, H = 0 , 69 and U = 0.80. At the first operating point r _A1 is thus U = 0.92 while at elevated operating conditions at the second operating point r _A2 U is about 0.8. In the second operating point, the voltage drop across the luminous area is significantly higher than at the first operating point, so that a stronger luminance gradient can be achieved at the second operating point.

By means of the selected operating point r = r _{A, it} can be achieved that an acceptable homogeneity of the luminance in one direction is achieved via the optically active surface, for example via the luminous surface of an organic light-emitting component, while simultaneously achieving a luminance gradient in another direction ,

The optoelectronic component 100 can with a first stream 412 from the first electrode area 110A to the second electrode 114 and a second stream 414 from the second electrode region to the second electrode 114 be operated such that the averaged over the luminous surface current density in the first electrode region 110A another is than in the second electrode area 110B , The optoelectronic component 110 can thus be operated simultaneously with different operating current densities.

Furthermore, the method may change 404 of the first electric current 412 and / or the second electric current 414 have such that the total emission 416 the electromagnetic radiation is temporally variable. The total emission may relate to the luminance, the color location, the brightness, the color saturation, the luminance gradient and / or a polarization of the emitted electromagnetic radiation.

The first electric current 412 and / or the second electric current 414 may / may have a direct current and / or an alternating current, for example a direct current component, for example in which the first electrode region and / or the second electrode region are biased.

The first electric current 412 and the second electric current 414 may differ in at least one of the following properties (illustrated in FIG 4B , C): the pulse amplitude 442 . 444 ; the pulse rate; the pulse width 436 . 440 ; the duty cycle; the pulse shape; and / or the number of pulses per sample interval 432 ,

Change this 404 of the first electric current 412 and / or the second electric current 414 have a pulse modulation, for example, a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

The first electrode area 110A and the second electrode area 110B can be controlled so that in the operating time 408 at least the first electrode area 110A energized (illustrated in 4B with the reference number 422 ), at least the second electrode region 110E energized (illustrated in 4B with the reference number 424 ) or the first electrode area 110A and the second electrode area 110B be energized simultaneously (illustrated in 4B with the reference number 426 ).

The first electric current 412 and / or the second electric current 414 can be changed such that the color locus of the emitted electromagnetic radiation locally from the optoelectronic component 100 is temporally changeable. The first electric current 412 and / or the second electric current 414 can be changed such that the brightness of the emitted electromagnetic radiation locally from the optoelectronic component 100 is temporally changeable. The first electric current 412 and / or the second electric current 414 can be changed such that the color saturation of the emitted electromagnetic radiation locally from the optoelectronic component 100 is temporally changeable.

For adjusting the brightness of the luminous area in the electrode areas 110A . 110E at an equal luminance gradient, the operating current and thus the associated averaged over the luminous area average operating current density j _A by means of pulse width modulation (PWM) are modulated, the pulse length, pulse shape and / or the pulse height or pulse amplitude can be varied.

To set a maximum brightness of the luminous area in the operation of the optoelectronic component at the operating point r = r _A , the operating current density j _{A of} the first electric current 412 and / or the second electric current 414 have a constant current component.

For changing the luminance gradient of the optically active surface, the operating point r = r _A and thus the corresponding over the luminous area in the region of the first electrode region 110A and second electrode area 110B averaged operating current density j _{A can be} varied. For example, the first electric current 412 and / or the second electric current 414 a first operating point r = r _A1 with an operating current density j _A1 and a second operating point r = r _A2 with an operating current density j _A2 , where: j _A2 > j _A1 .

During operation of the optoelectronic component 100 can by means of a variation of between the electrode areas 110A , B and the second electrode 114 operating currents which are averaged over the luminous area are varied with j _A1 ≦ j ≦ j _A2 . As a result, the luminance gradient on the luminous area can be varied. At the higher operating current density j _A2 at the second operating point r = r _A2 , a greater voltage drop along the longitudinal direction to the contact surfaces 134A , B, so that in this way a greater luminance gradient can be achieved than in an operation at the first operating point r = r _A with an operating current density j _A1 .

Changing the operating current density j between the two operating points r _A1 and r _A2 can lead to a change in the luminance gradient in the luminous area. By means of a pulse width modulation, the first electric current 412 and / or the second electric current 414 The brightness of the illuminated area can be changed independently of the luminance gradient.

Furthermore, during operation of the optoelectronic component 100 also the strength of the luminance gradient are modulated, while the total luminance of the light emitted by the luminous surface is kept constant. In other words, the overall brightness of an organic light-emitting device 100 can be kept constant, while the intensity of the luminance gradient is varied or modulated over the luminous area. This can be achieved by, for example, selecting the first operating point r _{A1 in} such a way that a pronounced luminance gradient is present, and the optoelectronic component 100 with a pulsed first electric current 412 and / or a pulsed second electric current 414 be operated with an operating current density _amplitude corresponding to the operating current density j _A1 .

The first electric current 412 and the second electric current 414 may have the same or different operating current amplitude / n.

With a variation of the amplitude of the pulse modulated first electric current 412 and / or second electric current 414 the intensity of the luminance gradient can be varied. When changing the operating current density amplitude, the pulse length and / or the duty cycle can be adjusted so that averaged over the light area averaged operating current densities lead to a display of a given pattern.

By means of a pulse amplitudes and pulse width modulation, the first electric current 412 and / or the second electric current 414 For example, the brightness of the luminous area and the luminance gradient in the luminous area can be in the area of the first electrode area 110A and the second electrode region 110E be changed independently.

For setting a pattern to be displayed in the luminous area, the first electric current 412 and the second electric current 414 have a different pulse modulation. The individual pulses of the first electric current 412 and the second electric current 414 may have a non-linear relationship such that by means of a sequence of pulses and the optical superimposition of the individual pulses a pattern to be displayed can be displayed.

Furthermore, the organic functional layer structure can be designed such that, in addition to a variation of the luminance gradient, it is also possible to achieve a variation of a color gradient over the luminous area.

In one embodiment, the luminous surfaces of an optoelectronic component having a common cathode but different anodes can be homogenized by means of the method. These could light up homogeneously in stand-alone mode and glow inhomogeneously in common operation. Furthermore, inhomogeneous patterns can be represented, for example in the case of complex-shaped organic light-emitting diodes.

In various embodiments, an optoelectronic component and a method for operating an optoelectronic component are provided, with which it is possible to represent temporally variable different homogeneous or deliberately inhomogeneous luminance distributions, which could not be reproduced without this method, for example.

The method allows with relatively little effort to provide extremely many, different luminance distributions and time sequences thereof. For any desired luminance distribution, the respective pulse coefficients, for example pulse width modulation coefficients, can be calculated with which the desired luminance distribution can be reproduced. Furthermore, an inhomogeneous component can be homogenized thereby and by means of the complex geometry of the component with relatively little effort. By means of a central contacting of a flat component, the center of the component can also be controlled by the method described above.

Claims (12)

Optoelectronic component ( 100 ), comprising: • a first electrode ( 110 ), • a second electrode ( 114 ), • an organic functional layer structure ( 112 ), and - wherein the organic functional layer structure ( 112 ) between the first electrode ( 110 ) and the second electrode ( 114 ), and - wherein the organic functional layer structure ( 112 ) is adapted to convert an electrical current into an electromagnetic radiation and emit; and - wherein at least the first electrode ( 110 ) at least a first electrode area ( 110A ) and a second electrode area ( 110B ) having; and a control device ( 302 ), Which is set up to provide ( 402 ) at least a first electric current ( 412 ) in the first electrode area ( 110A ) and / or to provide ( 402 ) at least a second electrical current in the second electrode region ( 110B ), the first electric current ( 412 ) and / or the second electric current ( 514 ) Current pulses ( 434 . 438 ) has; and - for a change ( 404 ) of the first electric current ( 412 ) and / or the second electric current ( 414 ) such that the total emissions ( 416 ) of the electromagnetic radiation is temporally variable. Optoelectronic component ( 100 ) according to claim 1, wherein the control device ( 302 ) has an electrical memory by means of which a plan for controlling the first electric current ( 412 ) and the second electric current ( 414 ) is stored. Optoelectronic component ( 100 ) according to one of claims 1 or 2, wherein the control device ( 302 ) has an input terminal by means of which a plan for controlling the first electric current ( 412 ) and the second electric current ( 414 ) can be entered. Optoelectronic component ( 100 ) according to one of claims 1 to 3, wherein the first electric current ( 412 ) and the second electric current ( 514 ) differ from each other in at least one property from the group of properties: • the pulse amplitude; • the pulse rate; • the pulse width; • the duty cycle; • the pulse shape; and / or the number of pulses per sample interval. Optoelectronic component ( 100 ) according to one of claims 1 to 4, wherein the control device ( 302 ) is set up such that changing ( 404 ) of the first electric current ( 412 ) and / or the second electric current ( 414 ) has a pulse modulation, preferably a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation. Method for operating an optoelectronic component according to one of Claims 1 to 5, the method ( 400 ) comprising: • providing ( 402 ) of a first electric current ( 412 ) in the first electrode area ( 110A ) and / or providing ( 402 ) of a second electric current ( 414 ) into the second electrode area ( 110B ), the first electric current ( 412 ) and / or the second electric current ( 514 ) Current pulses ( 434 . 438 ) has; and • Change ( 404 ) of the first electric current ( 412 ) and / or the second electric current ( 414 ) such that the total emissions ( 416 ) of the electromagnetic radiation is temporally variable. Procedure ( 400 ) according to claim 6, wherein the first electric current ( 412 ) and / or the second electric current ( 514 ) has a direct current and / or an alternating current. Procedure ( 400 ) according to claim 6 or 7, wherein the first electric current ( 412 ) and the second electric current ( 514 ) differ from each other in at least one property from the group of properties: • the pulse amplitude; • the pulse rate; • the pulse width; • the duty cycle; • the pulse shape; and / or the number of pulses per sample interval. Procedure ( 400 ) according to one of claims 6 to 8, wherein said changing ( 404 ) of the first electric current ( 412 ) and / or the second electric current ( 414 ) has a pulse modulation, preferably a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation. Procedure ( 400 ) according to one of claims 6 to 9, wherein the first electric current ( 412 ) and / or the second electric current ( 514 ) are changed such that the color location of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component. Procedure ( 400 ) according to one of claims 6 to 10, wherein the first electric current ( 412 ) and / or the second electric current ( 514 ) are changed such that the brightness of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component. Procedure ( 400 ) according to one of claims 5 to 11, wherein the first electric current ( 412 ) and / or the second electric current ( 514 ) are changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component.

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