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DE102011050839A8 - Sensor und Verfahren zur Herstellung desselben - Google Patents

Sensor und Verfahren zur Herstellung desselben Download PDF

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Publication number
DE102011050839A8
DE102011050839A8 DE102011050839A DE102011050839A DE102011050839A8 DE 102011050839 A8 DE102011050839 A8 DE 102011050839A8 DE 102011050839 A DE102011050839 A DE 102011050839A DE 102011050839 A DE102011050839 A DE 102011050839A DE 102011050839 A8 DE102011050839 A8 DE 102011050839A8
Authority
DE
Germany
Prior art keywords
producing
sensor
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011050839A
Other languages
English (en)
Other versions
DE102011050839A1 (de
Inventor
Sisira Kankanam Gamage
Michael Klitzke
Naresh Venkata Mantravadi
Terry Lee Cookson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE102011050839A1 publication Critical patent/DE102011050839A1/de
Publication of DE102011050839A8 publication Critical patent/DE102011050839A8/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE102011050839A 2010-06-18 2011-06-03 Sensor und Verfahren zur Herstellung desselben Withdrawn DE102011050839A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/818,635 US8569851B2 (en) 2010-06-18 2010-06-18 Sensor and method for fabricating the same
US12/818,635 2010-06-18

Publications (2)

Publication Number Publication Date
DE102011050839A1 DE102011050839A1 (de) 2011-12-22
DE102011050839A8 true DE102011050839A8 (de) 2012-08-02

Family

ID=45091361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011050839A Withdrawn DE102011050839A1 (de) 2010-06-18 2011-06-03 Sensor und Verfahren zur Herstellung desselben

Country Status (6)

Country Link
US (1) US8569851B2 (de)
JP (1) JP5850650B2 (de)
CN (1) CN102313621B (de)
DE (1) DE102011050839A1 (de)
IE (1) IE86121B1 (de)
SG (1) SG177086A1 (de)

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DE102011005676A1 (de) * 2011-03-17 2012-09-20 Robert Bosch Gmbh Bauteil
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
DE102012222426B4 (de) 2012-12-06 2015-01-08 Robert Bosch Gmbh Herstellungsverfahren für ein mikromechanisches Bauelement
FI125958B (en) 2013-05-10 2016-04-29 Murata Manufacturing Co Improved pressure sensor
CH708708A1 (de) * 2013-10-03 2015-04-15 Kistler Holding Ag Messelement zum Messen eines Drucks und Druckmesssensor.
US10213107B2 (en) 2014-07-01 2019-02-26 Injectsense, Inc. Methods and devices for implantation of intraocular pressure sensors
EP3164059B1 (de) * 2014-07-01 2023-04-19 Injectsense, Inc. Hermetisch abgedichtete implantatsensoren mit senkrechter stapelarchitektur
CN104236787B (zh) * 2014-09-05 2017-03-15 龙微科技无锡有限公司 Mems差压传感器芯片及制作方法
GB2533084A (en) * 2014-12-02 2016-06-15 Melexis Tech N V Relative and absolute pressure sensor combined on chip
FR3030738B1 (fr) * 2014-12-19 2020-03-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur de pression adapte aux mesures de pression en milieu agressif
US9793427B1 (en) * 2016-07-25 2017-10-17 Stmicroelectronics Pte Ltd Air venting on proximity sensor
CN106168514A (zh) * 2016-08-28 2016-11-30 桂林市晶准测控技术有限公司 一种压力传感装置
US10036676B1 (en) * 2017-03-15 2018-07-31 Honeywell International Inc. Microelectromechanical systems (MEMS) force die with buried cavity vented to the edges
FR3108462B1 (fr) * 2020-03-23 2022-08-26 Commissariat Energie Atomique Microphone microelectromecanique a encombrement reduit
CN116202661B (zh) * 2023-01-10 2023-09-29 苏州锐光科技有限公司 压力传感器及其制作方法

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JPS627045U (de) * 1985-06-28 1987-01-16
US4975390A (en) 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US4785822A (en) 1987-04-01 1988-11-22 Utah Medical Products, Inc. Disposable intracompartmental pressure transducer
US5013396A (en) 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
JP2577038B2 (ja) 1988-04-01 1997-01-29 新技術事業団 圧力センサ
JPH04141139A (ja) 1990-10-03 1992-05-14 Aisin Seiki Co Ltd カテーテル
JPH06163940A (ja) * 1992-11-24 1994-06-10 Fujikura Ltd 半導体圧力センサ
CA2198909A1 (en) 1994-09-02 1996-03-14 Robert Z. Obara Ultra miniature pressure sensor and guidewire using the same and method
JPH0875582A (ja) 1994-09-08 1996-03-22 Omron Corp 静電容量型圧力センサ及び圧力測定方法並びに血圧計
JPH08247873A (ja) * 1995-03-13 1996-09-27 Tokai Rika Co Ltd 圧力センサ
JP3240901B2 (ja) * 1995-12-27 2001-12-25 オムロン株式会社 静電容量型センサ
FR2746919B1 (fr) * 1996-03-28 1998-04-24 Commissariat Energie Atomique Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication
JPH10107296A (ja) * 1996-09-30 1998-04-24 Matsushita Electric Works Ltd 半導体装置及びその製造方法
WO1998015807A1 (en) 1996-10-07 1998-04-16 Lucas Novasensor Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching
US6388279B1 (en) * 1997-06-11 2002-05-14 Denso Corporation Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US6277666B1 (en) 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
JP2001155976A (ja) * 1999-11-26 2001-06-08 Matsushita Electric Works Ltd シリコンウェハの接合方法
JP2001304995A (ja) 2000-04-25 2001-10-31 Matsushita Electric Works Ltd 半導体圧力センサおよびその製造方法
US6946314B2 (en) 2001-01-02 2005-09-20 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
JP2003004567A (ja) * 2001-06-19 2003-01-08 Omron Corp 圧力センサ及び血圧計
US6912759B2 (en) 2001-07-20 2005-07-05 Rosemount Aerospace Inc. Method of manufacturing a thin piezo resistive pressure sensor
US6959608B2 (en) 2002-05-23 2005-11-01 The Board Of Trustees Of The Leland Stanford Junior University Ultra-miniature pressure sensors and probes
JP2005221453A (ja) 2004-02-09 2005-08-18 Denso Corp 圧力センサ
US7214324B2 (en) 2005-04-15 2007-05-08 Delphi Technologies, Inc. Technique for manufacturing micro-electro mechanical structures
DE602007012995D1 (de) * 2007-01-31 2011-04-21 Infineon Technologies Ag Mikromechanischer Drucksensor
US8127618B1 (en) 2007-05-18 2012-03-06 Pacesetter, Inc. Implantable micro-electromechanical system sensor
JP2010281570A (ja) 2007-09-25 2010-12-16 Alps Electric Co Ltd 半導体圧力センサ
JP2009109347A (ja) * 2007-10-30 2009-05-21 Yamatake Corp 圧力センサ及びその製造方法
US7644625B2 (en) * 2007-12-14 2010-01-12 Honeywell International Inc. Differential pressure sense die based on silicon piezoresistive technology
DE102008021091A1 (de) * 2008-04-28 2009-10-29 Epcos Ag Drucksensor
JP5227730B2 (ja) * 2008-10-07 2013-07-03 アズビル株式会社 圧力センサ

Also Published As

Publication number Publication date
IE20110282A1 (en) 2011-12-21
IE86121B1 (en) 2013-01-02
SG177086A1 (en) 2012-01-30
US8569851B2 (en) 2013-10-29
JP5850650B2 (ja) 2016-02-03
CN102313621A (zh) 2012-01-11
CN102313621B (zh) 2015-11-25
US20110309458A1 (en) 2011-12-22
DE102011050839A1 (de) 2011-12-22
JP2012002810A (ja) 2012-01-05

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Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee