DE102011055115A1 - Carrier material useful e.g. for sorting polyelectrolyte materials, and as adhesive material for sorting e.g. cells, comprises semiconductor material, or ferro- or piezoelectric material, having optionally insulating covering layer - Google Patents

Abstract

Carrier material for sorting or manipulating polyelectrolyte materials, comprises a semiconductor material, or a ferro- or piezoelectric material, exhibiting an optionally insulating covering layer, where the source of the sorting or manipulating is chemically isolated from the environment. An independent claim is also included for manipulating polyelectrolyte materials and their binding using the carrier material, comprising resorting the carrier material, where the near-surface electrostatic forces of the carrier material acting on the polyelectrolyte materials, are specifically influenced.

Description

The invention relates to support materials (carriers) for structured, one-component polyelectrolyte layers, multicomponent polyelectrolyte multilayers or layers of preformed polyelectrolyte complexes, the production or the variants of these (unmodified and) polyelectrolyte-modified support materials and examples of the use of these support materials.

State of the art

The polyelectrolyte materials have local electric dipoles, see 1a) (or in other words) optionally positively or negatively charged functional groups and can be bound by attractive electrostatic forces to support materials (physisorption, adsorption).

The polyelectrolyte materials (PEL) [ Schmidt, M. (Editor): Polyelectrolytes with Defined Molecular Architecture I. Springer Berlin Heidelberg, 1st edition, 2004 ] include one-component polyelectrolyte (PEE) systems whose charges have only a sign or which contain only one type of polyelectrolyte (eg negatively charged polyacrylic acid), as well as polyelectrolyte mixing systems such. B. Polyelektrolytmultischichten (PEM) or preformed Polyelektrolytkomplexpartikel (PEC). The various polyelectrolyte materials are in 1a) outlined.

One-component PEL systems (PEE) are formed by simple adsorption from solutions of the respective PEL on the support materials in a suitable concentration. In conventional substrates (lower surface charge density than those described here), only inhomogeneous PEL layers (islands) form in this case due to the electrostatic self-repulsion between surface regions with already adsorbed PEL layers and residual PEL in solution

By contrast, PEMs are prepared by consecutive adsorption of polycations (PELs having positively charged functional groups or monomer units) with polyanions (PELs having negatively charged groups or monomer units) to a substrate, wherein the support material is, for example, a silicon support whose surface chemically and / or physically processes becomes [ WO 2010066432 A2 ]. In this case, the cause of adsorption and desorption is not chemically and physically isolated from the environment.

1a) shows on the left side the structure of the polyelectrolyte materials (PEL) with a positive excess charge and on the right side the structure of the PEL with a negative excess charge. These are represented in the further figures by an oval with a "+" or "-" according to their excess charge.

Polyelectrolyte complex particles (PEC) are first formed directly by mixing a polycation and polyanion solution in the nonstoichiometric ratio in the bulk phase [ US 20080058229 A1 ]. Depending on the mixing ratio, the particles which form a neutral core and have a positively or negatively charged shell can bind to the charged carrier material by physisorption, similar to the PEL.

PEM films can form nanostructures oriented on eg unidirectionally textured supports by using chain-rigid PELs [ Müller, M .: Orientation of α-helical poly (L-lysines) in Consecutively Adsorbed Polyelectrolyte Multilayers on Texturized Silicon Substrates. Biomacromolecules. 2 (1), 262-269 (2001) ].

Likewise, by using chain-rigid PELs Müller, M. et al.: Needle like and spherical polyelectrolyte complex nanoparticles of poly (L-lysine) and copolymer of maleic acid. Langmuir. 21 (1), 465-469 (2005) ] rod-shaped PEC particles are formed, which can also produce oriented nanostructures on unidirectionally textured supports.

Oriented PEM films or PEC films can influence cell growth and result in the replacement of plasma-modified support materials, which can only be produced with considerably more effort.

As one-component PEL materials or in PEM or in PEC also conductive PEL and polymers such as e.g. Polyaniline, polypyrrole, polythiophene or polyethylenedioxythiophene (PEDOT) and used as conductive adhesion promoters between indium tin oxide (ITO) and active dye layers for organic light emitting diodes (OLEDs).

Object of the invention

The object of the invention is to specify a structured carrier material for the locally controllable adsorption and desorption of polyelectrolyte materials. The polyelectrolyte material may consist of one-component polyelectrolyte systems, multicomponent polyelectrolyte multilayers or preformed polyelectrolyte complex particles. The preparation and possible embodiments of the carrier material will be described.

Main features of the solution

The starting point for the carrier material is a locally doped semiconductor material with an optional insulating covering layer on the surface, see 1b) , or a piezo or ferroelectric material with optional surface insulating layer, see 1c) ,

The support material provides a source of locally controllable, near-surface electrostatic forces. In contrast to the prior art, the cause of these forces is chemically isolated from the environment.

The polyelectrolyte materials (one-component, PEM, PEC, etc.) consist of local electric dipoles (or in other words) optionally positively or negatively charged functional groups and can be bound to them by attractive electrostatic interaction with the oppositely acting electrostatic forces or charge centers of the support materials (physisorption , Adsorption).

In the special case, even chain-rigid polyelectrolytes can align themselves by varying degrees of near-surface, electrostatic forces on or up to a few nanometers above a surface or on other electrolyte materials.

The high surface charge density of the substrates generally results in a higher adsorbed amount of one-part PEL materials compared to other substrates (e.g., silicon wafers). Similar adsorption-enhancing effects are also expected for PEM and PEC systems.

The choice of species (electrons or holes) and / or the concentration of the majority charge carriers in the locally doped semiconductor or the formation of domains in the piezo or ferroelectric material varies the direction and strength of the near-surface electrostatic forces on the surface of the support material. Doping achieves volume charge densities of 10 ¹⁵ to 10 ²¹ e / cm ³ and surface charge densities of 10 ¹⁰ to 10 ¹⁴ e / cm ² in the semiconductor. The surface charge density in piezo and ferroelectric materials is 10 ¹³ to 10 ¹⁵ e / cm ² .

The thickness of the insulating cover layer and / or the local charges in the insulating cover layer determine the strength of the near-surface, electrostatic forces. The range of the electrostatic forces is up to 100 nm above the surface of the substrate. Thus, the adsorbed amount of the PEL materials can be controlled via the thickness of this cover layer.

The structuring of the insulating cover layer and / or the underlying semiconductor or piezoelectric or ferroelectric material determines the direction and the extent of the near-surface, electrostatic forces. This allows PEL materials to be structured or deposited locally.

Structured one-part and PEL, multi-component PEM and PEC layers are manipulated, ie adsorbed or desorbed, by changing the direction and strength of near-surface electrostatic forces by applying a voltage to the backside electrode of the substrate.

Transition regions each having a reverse direction of the near-surface, electrostatic forces may be selectively formed in the substrate and used by applying a voltage to one or more backside electrodes of the substrate for differently manipulating the patterned one-component PEL and multi-component PEM and PEC layers.

By using the formation of intrinsic electric fields in the space charge zones (transition regions in the semiconductor) of local doping profiles, a different kind of manipulation of the near-surface, electrostatic forces can take place by applying a voltage to the backside electrode. Thus, the adsorption of the PEL materials can be controlled.

The generation of reverse-direction domains of near-surface electrostatic forces in the piezo or ferroelectric material (with intermediate transition regions) is accomplished by local structuring of the piezo or ferroelectric material.

As an insulating layer, as a semiconductor material or as a piezoelectric or ferroelectric material, an optically active material and / or as a charged impurity in the carrier material, a magnetizable material for the specific local adsorption of polyelectrolyte materials may be used.

By structuring the backside electrode as well as the implanted regions, a crossbar structure for local sorting and manipulation of structured polyelectrolyte materials can be achieved.

Generated benefits or improvements over the prior art

A major advantage is the compatibility of the substrate with microelectronics and the optional use of a chemically resistant and biocompatible insulating cover layer. As a result, the region of the carrier material from which the near-surface electrostatic forces emanate due to the redistribution of charges in the near-surface region of the carrier material is spatially and chemically completely separated from the adsorbed PEL material. That is, only the near-surface, electrostatic forces act; and there is no direct contact with the charges in the near-surface region of the carrier material.

The support materials according to the invention have significantly higher surface charge density. As a result, one-component PEL layers with significantly higher, beyond a monolayer going on occupancy level or lead to adsorbed PEL levels that differ significantly from those that were previously measured experimentally on highly charged substrates.

Another advantage is the availability of PEL materials and the use of simple wet-chemical processes with water as a solvent. Other solvents can also be used.

Another advantage is the infinitely variable surface charge density when substrate is a semiconductor, and the stepwise controllable surface charge density when the substrate is a piezo or ferroelectric material. Since the adsorption of PEL materials is directly dependent on the charge density, a controlled deposition of PEL materials can be achieved.

Another advantage is the temporally and / or spatially variable adsorption and desorption, d. H. With the carrier materials modified by the single-component PEL and multicomponent PEM and PEC layers, it is possible to filter components from liquids or mixtures by targeted attraction (adsorption) to the carrier material and subsequent repulsion (desorption) from the carrier material.

Another advantage is the exclusive structuring (control and definition) of the near-surface electrostatic forces by surface charge in terms of their sign and amplitude, without changing other surface properties such as roughness, morphology, wetting, concentration and composition of functional groups. The short-range van der Waals forces of the insulating covering layer and the long-range, near-surface, electrostatic forces of the surface charge have an effect on the PEL material. There is only one parameter in the quantitative and locally controlled deposition of PEL materials: the surface charge of the carrier material , must be considered.

In particular, unidirectionally oriented charge patterns can be generated via the support materials and used as templates for the selective adsorption and alignment of PEL materials from rigid PEL. Advantages over mechanical or mechanical stretching based texturing techniques are expected.

Such targeted unidirectional and after [0032] pattern controlled PEL material modified and structured surfaces of the support materials can lead to a unidirectionally directed or selective interaction or a similar growth of cells.

Due to the chemical isolation of the cause of the electrostatic forces from the environment, any chemical reactions and thus the influence of the electrostatic forces are avoided.

Polyelectrolyte materials can, due to their structural similarity or identity to biomaterials (proteins, polysaccharides, polynucleotides), in turn, be used as adhesive material for other materials, e.g. Biomolecules and biomaterials, serve. Controlled inert passivation layers (PEL-1) or actively binding layers (PEL-2) or even biocidal layers (for example bacteria) (PEL-3) for biomaterials, biofluids or cells can be formed.

A current research question is the determination of the rate, the strength and / or the specificity of the binding, as well as the determination of the concentration of active biomolecules and particles as well as the identification of new interaction partners ("ligand-fishing") on polyelectrolyte materials. Biomolecules may be hydrophobic or hydrophilic. Hydrophobic biomolecules are nonpolar. Hydrophilic biomolecules are polar and, when in contact with the solvent, may have either positively charged (base), negatively charged (acidic) charge centers (functional groups), or be electrostatically neutral. Some low molecular weight biomolecules such as amino acids, monosaccharides, and nucleotides provide reactive monomers for polymerization into high molecular weight biomolecules, biopolymers such as proteins (eg, collagen, serum albumin, insulin), polysaccharides (eg, glycogen, starch, cellulose, dextrans, chitin) and polynucleotides (eg, DNA , RNA).

Detailed description of the embodiments

1b) shows the use of the carrier material according to the invention as semiconducting, locally doped p-type semiconductor p and / or n-type semiconductor n preferably having locally different acceptor concentration N _A in the p-type semiconductor p and preferably with locally different donor concentration N _D in the n-type semiconductor n, wherein the semiconductor may also be undoped. On the semiconductor surface is preferably an insulating cover layer 1 , There are different occupied boundary states of the number G between the insulating cover layer 1 and the n-type semiconductor n and the p-type semiconductor p, respectively. Furthermore, in the near-surface region of the p-type semiconductor, G acceptors are unshielded and ionized (-) or, in the n-type semiconductor, G donors are unshielded and ionized (+). The occupied interface states and the unshielded acceptors or donors form an asymmetric electrostatic dipole 3 , The sense of direction of the near-surface, electrostatic forces 4 from the asymmetric electrostatic dipole 3 over a p-type semiconductor p and over an n-type semiconductor n is opposite. The strength of the near-surface, electrostatic force 4 above the p-type semiconductor p increases with decreasing acceptor concentration N _A and above n-type semiconductor n increases with decreasing donor concentration N _D.

The properties of the interface between the semiconductor material and the insulating cover layer with respect to the state density and time constant of the interface states can be adjusted in a targeted manner by physical, chemical or thermal pretreatment of the semiconductor surface prior to the application of the insulating cover layer. 1c) shows the use of the carrier material according to the invention as a piezoelectric or ferroelectric material with the polarization charge 9 at the top and bottom of the piezo or ferroelectric material. On the surface of the piezoelectric or ferroelectric material is preferably an insulating cover layer 1 , The sense of direction of the near-surface, electrostatic forces 4 is by the sign of the polarization charge 9 determined at the top and bottom of the piezo or ferroelectric material. The strength of near-surface, electrostatic forces 4 increases with the number of polarization charges 9 per unit area up to a material-dependent saturation value. The strength of near-surface, electrostatic forces 4 increases with increasing distance of the polarization charges 9 between the top and bottom of the piezoelectric and ferroelectric material to a material-dependent saturation value.

For the sorting of intrinsically structured polyelectrolyte materials, the electrostatic forces, in addition to the choice of species (p or n) and the concentration of the majority charge carriers (N _A or N _D ) by local variation of the thickness d _{i of} the insulating cover layer 1 be varied locally, see 2a) , The electrostatic forces 4 take with decreasing thickness d _{i of} the insulating cover layer 1 to. The local modification of the thickness d _{i of} the insulating cover layer 1 can be done by photolithography.

For the sorting of the intrinsically structured polyelectrolyte materials, the electrostatic forces above a carrier material with piezoelectric or ferroelectric material can be determined by local variation of the thickness d _{i of} the insulating covering layer 1 be varied locally, see 2 B) , The electrostatic forces 4 take with decreasing thickness d _{i of} the insulating cover layer 1 to. The local modification of the thickness d _{i of} the insulating cover layer 1 can be done by photolithography.

3a) and 3b) shows the use of charged impurity or Q ⁺ Q ^- in the insulating covering layer 1 to attenuate or reinforce the near-surface, electrostatic forces and thus for the targeted manipulation of the forces acting on the electrolyte particles attracting and repelling forces.

The near-surface, electrostatic forces 4 from the asymmetric electrostatic surface dipole 3 can by positive (+) charges Q ⁺ and / or negative (-) charges Q ^- , by so-called oxide charges in the insulating cover layer 1 weakened or strengthened, see 3a) , Thus, for example, when introducing negative charges Q ^- in the insulating cover layer 1 via a p-type semiconductor p, the near-surface, electrostatic forces 4 toned down, whereas positive charges Q ⁺ in the insulating cover layer 1 via a p-type semiconductor p, the near-surface, electrostatic forces 4 strengthen. On the other hand, when negative charges are introduced Q ^- in the insulating cover layer 1 via an n-type semiconductor n, the near-surface, electrostatic forces 4 while positive charges Q ⁺ in the insulating overcoat 1 via an n-type semiconductor n, the near-surface, electrostatic forces 4 weaken.

The near-surface, electrostatic forces 4 the polarization charge 9 On the top and bottom of the piezoelectric or ferroelectric material, positive (+) charges Q ⁺ and / or negative (-) charges Q ^- can be attenuated or amplified by so-called charged impurities in the carrier material, preferably in the insulating cover layer 3b) , So z. B. in the introduction of negative charges Q ^- in the insulating cover layer 1 over a piezoelectric or ferroelectric material with positive polarization charge 9 at the top of the piezo or ferroelectric material, the near-surface, electrostatic forces 4 attenuated, whereas positive charges Q ⁺ in the insulating cover layer 1 over a piezoelectric or ferroelectric material with positive polarization charge 9 at the top of the piezo or ferroelectric material, the near-surface, electrostatic forces 4 strengthen. The charged impurity used Q ⁺ and Q ^- can be introduced in addition to or optionally only in the semiconductor material or piezoelectric or ferroelectric material.

The charged impurities Q ⁺ and Q ^{- used} can additionally be magnetized and thus activated by an external magnetic field.

The direction of the near-surface, electrostatic forces 4 can by structuring the surface of the n-type semiconductor n and / or the p-type semiconductor p, for example by means of photo, electron beam and / or ion beam lithography, preferably before the application of the insulating cover layer 1 be modified, see 4a) , For a semiconductor surface, the near-surface, electrostatic force 4 aligned normal to the surface. In a structured surface are the electrostatic forces 4 not necessarily parallel to each other. The direction of the near-surface, electrostatic forces defined locally by the structuring 4 determines the orientation of the electrolyte materials on the surface.

The direction of the near-surface, electrostatic forces 4 can by structuring the surface of the piezoelectric or ferroelectric material, for example by means of photo-, electron beam and / or ion beam lithography, preferably before the application of the insulating cover layer 1 be modified, see 4b) , In a surface of the piezoelectric or ferroelectric material are the near-surface, electrostatic forces 4 aligned normal to the surface. In a structured surface are the electrostatic forces 4 not necessarily parallel to each other. The direction of the near-surface, electrostatic forces defined locally by the structuring 4 determines the orientation of the electrolyte materials on the surface.

For the manipulation of PEL ( 1a ) on the back surface of the doped semiconductor becomes a metallically conductive backside electrode 5 upset, see 5 , To the backside electrode 5 a DC voltage U _{K is} applied. Importantly, the near-surface, electrostatic forces 4 be minimized or nullified by the application of a suitable DC voltage U _K. For example, in the semiconductor material silicon, the suitable DC voltage U _K corresponds to the energy gap between the position of the Fermi level dependent on the donor concentration N _D and the conduction band edge E _C in the n-type semiconductor n and the energy gap between the position of the Fermi level dependent on the acceptor concentration N _A Valence band edge E _V in p-type semiconductor p. Preferably, the backside electrode 5 applied over a large area. With this arrangement, the near-surface, electrostatic forces can be extinguished.

The semiconductor is doped in this way, see 6a) in that differently doped regions of the semiconductor are at interfaces 7 meet. At such interfaces 7 an area (space charge zone) is formed which does not have any free charge carriers (only unshielded doping atoms) 10 ) contains. Perpendicular to the interface 7 an electric field forms, its maximum in the interface 7 is located and which is zero at the edge of the space charge zone. For a time-dependent manipulation, see 6a) , the electrolytic molecules at the surface becomes a metallically conductive backside electrode at the backside of the doped semiconductor 5 applied. To the backside electrode 5 a voltage U is applied. The voltage U is a superposition of an AC voltage and a DC voltage. The near-surface, electrostatic forces 4 are minimized and maximized by applying the voltage U time dependent. Preferably, the backside electrode 5 applied over a large area. The electric fields perpendicular to interface 7 do not necessarily run parallel / antiparallel to the electric field, which by applying the voltage U at the back electrode 5 between the backside electrode 5 and the surface of the semiconductor is formed. Importantly, a separate time-dependent manipulation of the electrolyte materials near interfaces 7 due to the near-surface, electrostatic forces in the transition region 6 is possible because the shift of free charge carriers is influenced by intrinsic electric fields.

The piezoelectric or ferroelectric material is structured in this way, see 6b) in that different regions of the piezoelectric or ferroelectric material with different polarization charge 9 (Domain) at the top and bottom of the piezo or ferroelectric material at interface 8th meet. The direction of the near-surface, electrostatic forces above-left and above-right of such interfaces 8th is opposite. The near-surface, electrostatic forces above such interfaces 8th do not necessarily run normal to the surface of the substrate, but they go continuously into each other.

For a highly time-dependent manipulation, see 7a) , the electrolytic molecules at the surface becomes a metallically conductive backside electrode at the backside of the doped semiconductor 5 applied. To the backside electrode 5 a voltage U is applied. The voltage U is a superposition of an AC voltage and a DC voltage. By applying the voltage U to the backside electrode 5 becomes the polarization charge 9 connected at the top and bottom of the piezo or ferroelectric material in the individual domains. Importantly, a separate time-dependent manipulation of the electrolyte materials near interfaces 8th due to the continuous merging into the near-surface, electrostatic forces is possible. For a strongly time-dependent manipulation, cf. 7a) , the surface polyelectrolyte material becomes a structured metallic back side electrode at the backside of the doped semiconductor 5 applied. To the structured backside electrode 5 is a voltage U _i with i = 1, ..., m, where m is the number of backside electrodes 5 indicates, created. The voltage U _i is a superposition of an AC voltage and a DC voltage. The near-surface, electrostatic forces 4 are controlled independently by applying the voltages U _i in the different areas.

The formation of local, near-surface, electrostatic forces 4 can be done by structured implantation of the semiconductor, for example by a 90 ° to each other rotated alignment (crossbar array) of stripe-shaped implanted semiconductor regions and strip-shaped structured back electrode regions 5 ,

For a highly time-dependent manipulation, see 7b) , the electrolytic molecules on the surface become a structured metallic-conducting backside electrode on the backside of the piezoelectric or ferroelectric material 5 applied. To the structured backside electrode 5 a voltage U _{i is} applied. The voltage U _i is a superposition of an AC voltage and a DC voltage. The near-surface, electrostatic forces 4 are controlled independently by applying the voltages U _i in the different areas.

The manipulation of the near-surface, electrostatic forces is in the transition region above the interface 8th especially strong, see 7b) , The carrier material, preferably with an insulating cover layer 1 , may be locally or over the entire surface designed such that it is optically active locally or over the entire surface, for example by using ZnO and TiO ₂ as the material for the insulating cover layer 1 , With very strong optical activation of the support material and the heat energy generated thereby, the polyelectrolyte material and any biomaterials and biomolecules (eg viruses or bacteria) absorbed thereon may also be destroyed. Important for the optical activation is that the photon or light energy is greater than the band gap of the semiconductor material, the ferroelectric or piezoelectric material or the material of the insulating cover layer of the carrier material.

Analogously, the activation of the magnetizable charged impurities in the carrier material can be effected by an external static or time-varying magnetic field and the heat energy thus generated can be passed on to the electrolyte material.

On the insulating cover layer 1 On a semiconductor material can be dispensed by using the optical activation of the support material or the activation of the magnetizable charged impurities in the substrate or when used under vacuum-like conditions. In all other cases it is recommended to use an insulating covering layer on the semiconductor material 1 applied.

For ferroelectric or piezoelectric material, it is recommended to use an insulating cover layer 1 apply to minimize disturbing influences from the environment.

With the support materials according to the invention it is possible that further insights into the theory of polyelectrolyte adsorption on solid surfaces can be gained or the theory can be brought into better agreement with experimental findings on the dependence of the adsorbed PEL amount on the surface charge density.

LIST OF REFERENCE NUMBERS

p, p ⁺

Semiconductors with holes as majority charge carriers, hole concentration p ⁺ > p

n, n ⁺

Semiconductors with electrons as majority charge carriers, electron concentration n ⁺ > n

N _A

 Acceptor concentration in p-type semiconductor

N _D

 Donor concentration in n-type semiconductor

PEE

 One-component polyelectrolyte systems

PEM

 polyelectrolyte multilayer

PEC

 Polyelektrolytkomplexartikel

PEL

polyelectrolyte

PEL 1

 controls inert passivation layer for biomaterials, fluids or cells

PEL-2

 active binding layer for biomaterials, fluids or cells

PEL-3

 biocidal layer for biomaterials, biofluids or cells

1

 insulating cover layer

2

 Interfacial charge

3

asymmetric electrostatic surface dipole

4

electrostatic force

5

 metallically conductive backside electrode

6

 Near-surface, electrostatic force in the transition region

7

 Border between p-type semiconductor p and n-type semiconductor n

8th

 Border between domains with different polarization charge

9

 polarization charge

d _i

 Thickness of the insulating cover layer i, i = 1, 2, ...

E _F

 Fermi

E _C

 Conduction band edge

E _V

 valence

U _K

 DC voltage (Kelvin voltage)

U, U ₁ , U ₂ , U _i

 Superimposed DC voltage and AC voltage

TM

support material

10

unshielded dopants in the semiconductor

Q ⁺ , Q ^-

 charged impurities in the carrier material, also magnetizable

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2010066432 A2 [0005]
• US 20080058229 A1 [0007]

Cited non-patent literature

• Schmidt, M. (Editor): Polyelectrolytes with Defined Molecular Architecture I. Springer Berlin Heidelberg, 1st Edition, 2004 [0003]
• Müller, M .: Orientation of α-helical poly (L-lysines) in Consecutively Adsorbed Polyelectrolyte Multilayers on Texturized Silicon Substrates. Biomacromolecules. 2 (1), 262-269 (2001) [0008]
• Müller, M. et al.: Needle like and spherical polyelectrolyte complex nanoparticles of poly (L-lysine) and copolymer of maleic acid. Langmuir. 21 (1), 465-469 (2005) [0009]

Claims (19)

A carrier material for sorting or manipulating polyelectrolyte materials, comprising a semiconductor material or a ferroelectric or piezoelectric material, each with an optional insulating cover layer 1 in which the cause of the sorting or manipulation is chemically isolated from the environment. Support material according to claim 1, characterized in that the insulating cover layer 1 less than 20 nm, preferably less than 5 nm, more preferably between 2 and 3 nm thick. Support material according to claim 1 or 2, characterized in that a metallically conductive backside electrode 5 is attached to the carrier material and this is additionally optionally made locally structured. Support material according to one of claims 1 to 3, characterized in that the surface of the carrier material is structured. Carrier material according to one of the preceding claims, characterized in that the carrier material comprises a semiconductor material and that the semiconductor material is locally undoped and / or doped, and / or individual or multiple shielding charge traps are introduced locally into the semiconductor and / or locally in the insulating cover layer to influence the near-surface, electrostatic forces. Support material according to one of the preceding claims, characterized in that the state density and time constant of the interface states of the boundary layer between the insulating cover layer 1 and semiconductor material is particularly large because the interface states determine the dynamics of the manipulation. The carrier material according to claim 1, characterized in that the carrier material comprises a ferroelectric or piezoelectric material and that optionally locally shielding charge traps are introduced into the ferroelectric or piezoelectric material and / or into the cover layer. Support material according to claim 4, characterized in that other surface properties such as roughness, morphology, wetting, concentration and composition of functional groups are not changed for structuring. Support material according to claim 4, characterized in that unidirectionally oriented charge patterns are generated, which can be used as a template for the selective adsorption and alignment of PEL materials of chain-rigid PEL. Manipulation of polyelectrolyte materials and their bonding by means of a carrier material according to one of the preceding claims, comprising a semiconductor material with optional insulating cover layer or a ferroelectric or piezoelectric material with optional insulating cover layer, wherein charge carriers are rearranged in the carrier material, characterized in that the on the polyelectrolyte materials acting near-surface, electrostatic forces of the carrier material can be influenced. Manipulation of polyelectrolyte materials and their bonding according to claim 10, characterized in that the carrier material comprises a ferro- or piezoelectric material and that optionally locally shielding charge traps are introduced into the ferro- or piezoelectric material and / or in the cover layer to the near-surface, electrostatic To influence forces. Manipulation of polyelectrolyte materials and their bonding by means of a carrier material according to claim 10, characterized in that the thickness of the cover layer determines the strength of the attraction and repulsion of the polyelectrolyte materials. Manipulation according to claim 8, characterized in that at least one transitional region between two regions, each with a reverse direction of the near-surface, electrostatic forces in the carrier material is formed in order to make the manipulation and the binding of polyelectrolyte material temporally and spatially variable. Manipulation according to claim 10, characterized in that a constant or time-varying voltage at the back contact of the carrier material is applied and thus the attraction and repulsion of the polyelectrolyte materials and a switching of attraction and repulsion can be controlled constantly and / or temporally variable. Manipulation according to claim 10, characterized in that a constant or temporally variable illumination of the substrate with a photo energy greater than the band gap of the semiconductor material, the ferroelectric or piezoelectric material or the material of the insulating cover layer for redistributing the free charge carriers in the semiconductor material or the polarization charges in the ferro- or piezoelectric material leads and thus the strength of the near-surface, electrostatic forces is manipulated. Manipulation according to claim 10, characterized in that an optical activation of the carrier material and / or a magnetic activation of the magnetizable impurities in the carrier material leads to local heat development and can be used to destroy the intrinsically structured polyelectrolyte materials. Use of the support material with polyelectrolyte material as adhesive material for the manipulation or sorting of biomolecules, biomaterials, biofluids or cells. Use according to claim 17, wherein the polyelectrolyte material as adhesive material forms a controlled inert passivation layer (PEL-1) or an actively binding layer (PEL-2) or a biocidal layer. Use of the carrier material structured according to Claim 8 or Claim 9 in order to produce targeted and pattern-controlled unidirectionally directed or selective interaction or the same growth of cells.

Images