DE102016123007A1 - Organic opto-electronic component - Google Patents

Abstract

An organic optoelectronic component (1) having an organic active layer (10), and a body (20) connected to the organic active layer (10), the body (20) comprising a carrier layer (21) and an oxide layer (22), the oxide layer (22) is formed with an oxide of at least one metal, the support layer (21) and the oxide layer (22) are bonded together, and the oxide layer (22) has pores (220).

Description

An organic optoelectronic component is specified.

One object to be solved is, inter alia, to provide an organic optoelectronic component which is particularly reliable and has improved efficiency.

The organic optoelectronic component is, for example, a radiation-emitting optoelectronic component. For example, the organic optoelectronic component may be an organic light-emitting diode. The organic optoelectronic component can generate and emit light during normal operation. It is possible that the organic optoelectronic component generates light in the spectral range of UV radiation to infrared radiation.

Furthermore, it is possible for the organic optoelectronic component to be a radiation-receiving component, such as a radiation detector or a solar cell.

In accordance with at least one embodiment of the organic optoelectronic component, the component comprises an organic active layer. The active layer is formed, for example, with an organic material. The active layer is configured to generate or receive electromagnetic radiation during normal operation. For a radiation-emitting component, the active layer can be made transparent, for example, for electromagnetic radiation in the visible wavelength range.

In accordance with at least one embodiment of the organic optoelectronic component, the component comprises a body that is connected to the organic active layer. By way of example, the body is the part of the organic optoelectronic component which gives the component its mechanical stability. The body can be further flexible. In particular, an organic optoelectronic component comprising a flexible body may be bendable.

For example, the organic active layer is disposed on a major surface of the body so that the main plane of extension of the organic active layer is parallel to the main plane of extension of the body.

In accordance with at least one embodiment of the organic optoelectronic component, the body comprises a carrier layer and an oxide layer. For example, the main extension planes of the carrier layer and the main extension plane of the oxide layer are parallel to the main extension plane of the body. For example, the oxide layer completely covers the carrier layer on its side facing the organic active layer. In particular, the organic active layer is arranged on the side of the oxide layer facing away from the carrier layer.

In accordance with at least one embodiment of the organic optoelectronic component, the oxide layer is formed with an oxide of at least one metal. For example, the metal is aluminum, tin, titanium, tantalum, niobium, magnesium or an alloy of the metals mentioned. In particular, the carrier layer may be formed with a material comprising a metal or an alloy of metals. For example, the oxide layer is formed with a material comprising an oxidized form of the material with which the carrier layer is formed.

In accordance with at least one embodiment of the organic optoelectronic component, the carrier layer and the oxide layer are connected to one another. For example, the carrier layer and the oxide layer are bonded together in a material-locking manner, wherein the connection partners are held together by atomic or molecular forces. In particular, it is a non-destructive releasable connection, so that the oxide layer and the support layer can be separated only by destroying one of the two layers. For example, the oxide layer is made with the material of the carrier layer. In particular, the oxide layer is produced on the carrier layer.

According to at least one embodiment of the organic optoelectronic component, the organic optoelectronic component comprises an organic active layer and a body which is connected to the organic active layer, wherein the body comprises a carrier layer and an oxide layer, the oxide layer is formed with an oxide of at least one metal is, and the carrier layer and the oxide layer are interconnected.

An organic optoelectronic component described here is based, inter alia, on the following considerations. In general, solid ceramic bodies are used as completely inorganic electrically insulating and good thermally conductive substrate. The solid ceramic bodies are hardly elastically deformable, so that can be produced with these ceramic solid bodies no flexible organic optoelectronic components. Alternatively, metal foils with an organic polymer coating as used electrically insulated and well thermally conductive substrate. Such a substrate may have flexible properties, however, organic polymer layers are only limitedly suitable for encapsulating organic optoelectronic devices since hermeticity to moisture and oxygen is limited. By diffusing moisture or oxygen, the organic active layer of the optoelectronic component can be damaged. Alternatively, metallic substrates can be coated with inorganic layers by atomic layer deposition (ALD), chemical vapor deposition (CVD) or by sputtering. In these deposition methods, however, either the process times are very long, for example longer than 60 minutes to produce a layer having a thickness of at least 1 .mu.m, or the layer thicknesses of the deposited material are low, for example less than 1 .mu.m.

The organic optoelectronic component described here now makes use, inter alia, of the idea of providing a body as substrate or cover layer. The body comprises a metal layer having, for example, flexible properties. The metal layer is formed with an electrically oxidizable material, so that, for example, by means of anodization, an oxide layer can be produced on the carrier layer of the body. In this context, anodizing is a method of surface technology for producing an oxide layer on an electrically oxidizable material by means of electrical oxidation or anodic oxidation. In the anodization process, an oxide or hydroxide is formed by conversion of the metal layer. The oxide layer is monolithically connected to the metal layer on which it is produced, in particular the carrier layer. In particular, the oxide layer is not formed on the workpiece by arranging an additional material, but by converting the material of the metal layer. For example, an oxide layer produced by means of anodizing has a particularly large thickness of at least 2 μm, such a thickness of the oxide layer being able to be produced within a moderate process time of, for example, 10 minutes, in particular less than 5 minutes. In particular, the thickness of a native oxide layer formed under normal atmospheric conditions is less than 100 nm, as opposed to an oxide layer made of anodized oxide of an electrically oxidizable metal. In other words, the oxide layer may be formed by anodizing a metal. This is also an objective feature that can be detected, for example, by electron microscopic investigations of the oxide layer. The oxide layer produced by anodizing, for example, has pores. In particular, the oxide layer is clearly distinguishable, for example, based on the shape, distribution and / or size of the pores of oxide layers, which are prepared by alternative methods.

Advantageously, therefore, the body can be produced both within moderate process times, has flexible mechanical properties and is formed with an inorganic material which has a high hermeticity to moisture and oxygen. Furthermore, the body has a carrier layer and an oxide layer, which are connected to one another in a material-tight manner via a particularly strong mechanical connection. The carrier layer is thus advantageously particularly well protected on its main surfaces from corrosion and other harmful environmental influences. For example, the oxide layer has a particularly high mechanical stability, so that the oxide layer advantageously also serves as scratch protection.

Advantageously, the oxide layer produced by means of anodization, for example, has a porous structure. In other words, pores are arranged in the oxide layer, which may be filled with a different material from the oxide layer. For example, the pores may be filled with a dye that affects the color appearance of the surface covered with the oxide layer. Further, the oxide layer may have areas in which the roughness of the surface varies. For example, the pores may be closed, so that the pores are completely surrounded on all sides by the material of the oxide layer. In other areas, the pores can be exposed to at least one side, so that the oxide layer, due to the recesses formed by the pores, has a roughened surface. In particular, adhesion properties of different materials on the surface of the oxide layer can be specifically influenced in certain areas. Further advantageously, for example, a dye can be particularly well protected from harmful environmental influences in closed pores and by means of the closing of the pores can be prevented particularly good outgassing of the dye or conversion material.

According to at least one embodiment of the organic optoelectronic component, the oxide layer has pores. For example, the pores are inclusions of a material that is different from the material of the oxide layer. In particular, the pores occupy at most 70% by volume, preferably less than 50% by volume, and at least 5% by volume, especially at least 10% by volume, of the oxide layer. In particular, the pores may be closed, so that the pores are completely bounded on all sides by the material of the oxide layer. Alternatively, at least some of the Be open pores, so that these pores are freely accessible from an area outside the oxide layer.

In accordance with at least one embodiment of the organic optoelectronic component, the body is the substrate of the optoelectronic component. For example, the organic active layer is made on the body. In particular, the organic active layer is produced on the side of the oxide layer facing away from the carrier layer. The body may, in particular during the production of the component, be a mechanically bearing component of the organic optoelectronic component. Advantageously, the body may be a particularly cost-producible, mechanically flexible and high hermeticity exhibiting substrate.

In accordance with at least one embodiment of the organic optoelectronic component, the carrier layer has a first main area and a second main area. In this case, the first main surface of the oxide layer and the second main surface is covered by a further oxide layer, and the support layer, the oxide layer and the further oxide layer are monolithically connected to each other. For example, both main surfaces of the carrier layer are completely covered by the oxide layer or the further oxide layer. In particular, the carrier layer is in direct contact both with the oxide layer and with the further oxide layer and is adhesively bonded to the oxide layer and the further oxide layer. In particular, the oxide layer and / or the further oxide layer also cover end faces of the carrier layer which connect the first main area and the second main area of the carrier layer to one another. By way of example, the oxide layer and the further oxide layer are in direct mechanical contact with one another in the region of the end faces. Advantageously, a body, which in each case has an oxide layer on the first and on the second main surface, is insulated on both main surfaces.

All features disclosed for the oxide layer are also disclosed for the further oxide layer. For example, the further oxide layer also has pores. Advantageously, the body with an oxide layer and a further oxide layer on both the first and on the second major surface on a particularly high hardness.

In accordance with at least one embodiment of the organic optoelectronic component, an adhesion layer is arranged between the carrier layer and the oxide layer. In this case, the adhesion layer is in direct contact with the carrier layer and the oxide layer. For example, the oxide layer may be formed by complete electrical oxidation of a metal layer. In particular, the metal layer, which is formed with the material to be oxidized, may be formed with a different metal from the carrier layer. Advantageously, in a body in which the oxide layer and the carrier layer are formed with different metals, it is also possible to use metals for the carrier layer which, for example, are not electrically oxidizable. For example, the oxide layer and the carrier layer are mechanically firmly bonded to the adhesion layer by means of bonding. In particular, the oxide layer and / or the carrier layer are firmly attached to the adhesion layer by means of eutectic bonding. In particular, the starting material of the oxide layer may be mechanically firmly bonded to the adhesion layer prior to its oxidation. This can be visible, for example, on the finished product since, in this case, the oxide layer has grown into the starting material for the oxide layer from the side facing away from the adhesion layer. Thus, a remainder of the starting material may be disposed on the side of the oxide layer facing the adhesion layer. Advantageously, in a connection by means of an adhesion layer between the oxide layer and the carrier layer, the material with which the carrier layer is formed can be selected independently of the material with which the oxide layer is formed.

In accordance with at least one embodiment of the organic optoelectronic component, the carrier layer is formed with a metal, and the oxide layer and / or the further oxide layer are formed with the oxide of the metal. For example, the body is made by oxidation of the exposed surfaces of a source material. Thus, the oxide layer and the further oxide layer can be produced in a common oxidation process, in particular an electrical oxidation process. Further, the starting material may be a film that can be processed in a roll-to-roll process so that the oxide layer and / or the further oxide layer can be produced in a roll-to-roll process. For example, the oxide layer and the further oxide layer have the same thickness. Advantageously, the oxide layer and the further oxide layer can be produced in a common process step. This allows a particularly time-saving manufacturing process of the body.

In accordance with at least one embodiment of the organic optoelectronic component, the oxide layer and / or the further oxide layer has a thickness of at least 2 μm, and the pores have a main extension direction which extends transversely to the first and / or second main surface. In particular, the oxide layer and / or the further oxide layer has a thickness of at least 5 μm, preferably at least 10 μm. The oxide layer is produced for example by means of electrical oxidation. Advantageously, by means of electrical oxidation particularly large layer thicknesses of the oxide layer can be produced in particularly short process times.

The pores do not extend into the material of the carrier layer, but are surrounded exclusively by the material of the oxide layer or the further oxide layer and are optionally exposed to the outside. The pores extend transversely, in particular perpendicular, to the main surface of the oxide layer and / or the further oxide layer.

According to at least one embodiment of the organic optoelectronic component, a non-gaseous material is arranged in at least some of the pores, which material differs from the material of the material surrounding the pores of the oxide layer and / or the further oxide layer with respect to the thermal properties. For example, a liquid or solid material is arranged in the pores, which has a particularly high thermal conductivity. The arrangement of a material advantageously makes it possible to provide a body with particularly high thermal conductivity in the pores of the oxide layer and / or the further oxide layer. Alternatively, a material with particularly low thermal conductivity may be arranged so that the oxide layer has a thermally insulating effect. Advantageously, by means of the arrangement of certain materials in the pores, the thermal conductivity of the oxide layer can be selectively influenced in certain areas.

In accordance with at least one embodiment of the organic optoelectronic component, a dye and / or a conversion material are arranged in at least some of the pores. By way of example, the conversion material is a material which is set up in the organic active layer to convert electromagnetic radiation into electromagnetic radiation of a longer wavelength range. In particular, the conversion material comprises a ceramic phosphor and / or quantum dots. The dye is, for example, a material which reflects electromagnetic radiation of different wavelengths with different intensity. For example, the dye and / or the conversion material are arranged in areas which are covered by the organic active layer. In particular, the dye can be visible from the outside when switched off. Furthermore, electromagnetic radiation emitted by the organic active layer during operation of the optoelectronic component can strike the dye and / or the conversion material. For example, therefore, a part of the optoelectronic radiation generated in the organic active layer can be converted by means of the conversion material or absorbed by means of the dye. For example, by means of a dye, the dominant wavelength of the emitted electromagnetic radiation can be shifted in the direction of longer wavelengths. Advantageously, dyes or conversion materials in the pores are particularly well protected against environmental influences, resulting in a particularly robust optoelectronic component.

In accordance with at least one embodiment of the organic optoelectronic component, at least some of the pores, which are arranged on the side of the carrier layer facing away from the organic active layer, are filled with a black dye. For example, the black dye particularly effectively prevents the leakage of the electromagnetic radiation generated in the organic active layer through the side of the body facing away from the organic active layer. Further, the thermal properties of the body can be influenced by means of the black dye, so that this advantageously allows a particularly efficient dissipation of the heat generated during operation of the optoelectronic component.

According to at least one embodiment of the organic optoelectronic component, other dyes and / or conversion materials are arranged in the pores of the oxide layer than in the pores of the further oxide layer. For example, the organic optoelectronic component can have a conversion material on the side facing the organic active layer or can have a dye which, during operation and / or in the switched-off state, influences the color of the optoelectronic component or the wavelength of the radiation emitted by the optoelectronic component. On the side facing away from the organic active layer, the further oxide layer may have pores which are filled, for example, with a material which has a particularly high thermal conductivity. Advantageously, this allows an adaptation of the properties of the body, which are optimized for different boundary conditions. For example, the properties of the side facing the organic active layer may be optimized with regard to their optical properties, and the side facing away from the organic active layer may be optimized with regard to their thermal properties.

In accordance with at least one embodiment of the organic optoelectronic component, the oxide layer and / or the further oxide layer are at least locally free of pores on their side remote from the carrier layer. For example, after the production of the oxide layer, the pores are closed by means of electrical oxidation in a further process step. In particular, the pores are made by means of steam or heated water locked. Thus, the pores are not freely accessible after closing from the outside, so that the pores are completely bounded on all sides by the material of the oxide layer or the further oxide layer. Advantageously, this allows a particularly reliable and robust integration of a dye or a conversion material in the pores. Further, despite the pores in the oxide layer, a low roughness of the main surface of the body can be generated.

In accordance with at least one embodiment of the organic optoelectronic component, the thickness of the oxide layer and / or the further oxide layer, measured perpendicular to the lateral plane, varies in the lateral direction. For example, the oxide layer is removed in places by means of a structuring method, in particular by means of laser structuring, so that the thickness of the oxide layer is reduced. In particular, the oxide layer may be completely removed in some areas, so that the carrier layer is exposed to the outside. Advantageously, by means of such structuring, a particularly robust structuring of the organic optoelectronic component can be generated so that it can be removed, in particular, only by destroying the organic optoelectronic component. Advantageously, this offers a simple possibility for generating security-relevant markings, which can be, for example, serial numbers or QR codes.

In accordance with at least one embodiment of the organic optoelectronic component, the roughness of the oxide layer and / or the further oxide layer varies in the lateral direction. For example, the pores of the oxide layer and / or the further oxide layer are closed only in certain areas. Alternatively, the layer from which the oxide layer and / or the further oxide layer are produced may already have a different roughness in regions before the oxidation. In particular, the thermal conductivity, the size of the contact surface or the optical appearance of the body can be selectively influenced by means of the different roughness in regions. For example, in regions in which further layers are to be applied to the surface of the oxide layer, have a particularly rough surface, so that a mechanically particularly stable connection between the oxide layer and the other material can be produced. Alternatively, the oxide layer may have a particularly smooth surface in areas which require particularly good thermal contacting. Advantageously, the roughness of the oxide layer can be locally adapted to adapt different properties, in particular adhesion properties, thermal properties and / or optical properties of the surfaces.

In accordance with at least one embodiment of the organic optoelectronic component, the body projects beyond the organic active layer in lateral directions. For example, the body projects beyond the organic active layer in all lateral directions, with lateral directions being directions that are parallel to the main extension plane of the optoelectronic device. In particular, in regions which laterally project beyond the organic active layer, the body may comprise a dye which is integrated into the pores of the oxide layer. By way of example, the dye may be lettering or a machine-readable code, for example a bar code or a so-called QR code. Alternatively, the area of the body projecting laterally beyond the organic active area may form a colored frame around the electromagnetic radiation emitting area. In particular, in this frame region, the body has a dye which has a color similar to that emitted by the organic optoelectronic component.

In accordance with at least one embodiment of the optoelectronic component, the carrier layer is laser-structured on its first and / or second main surface. For example, the carrier layer is already laser-structured before the oxide layer is produced, so that laser-structured regions have a different roughness from the surrounding regions. Accordingly, the surface of the oxide layer after the formation of the oxide layer on the support layer on areas with different roughness.

Alternatively, the surface of the carrier layer can be patterned after the oxide layer has been produced by means of a laser. In this case, the wavelength of the laser can be selected so that the oxide layer is transparent to the laser. Advantageously, such structuring enables a particularly scratch-resistant and robust structuring of the carrier layer. Advantageously, in such a laser structuring, the roughness of the oxide layer is unchanged compared to surrounding areas, but the roughness of the carrier layer, which is different from surrounding areas, is visible from the outside.

In accordance with at least one embodiment of the organic optoelectronic component, light emitted during operation strikes the oxide layer and is influenced by the dyes and / or conversion materials. For example, with the conversion materials, the light emitted during operation is converted into light of a longer wavelength range. Furthermore, dyes and / or conversion materials can be applied to the oxide layer laterally structured by means of a printing process become. Advantageously, the color appearance or the emitted light can thus be influenced in a targeted manner along defined lateral areas. For example, dyes and / or conversion materials can be applied by means of inkjet, gravure printing or pad printing.

In accordance with at least one embodiment of the organic optoelectronic device, in the region in which the body is connected to the organic active layer, the oxide layer is visible from outside. Advantageously, the color appearance of the oxide layer can be specifically influenced by means of a dye. By way of example, the oxide layer comprises a dye which has a color similar to that emitted during operation of the optoelectronic component, so that it is advantageously also visible in the switched-off state that light of which wavelength range the optoelectronic component emits.

• Es zeigen die 1A - 1G Schnittansichten verschiedener Ausführungsbeispiele eines Körpers eines organischen optoelektronischen Bauteils.
• Es zeigen die 2A - 2C Schnittansichten von Poren, die in einer Oxidschicht eines Körpers eines organischen optoelektronischen Bauteils angeordnet sind.
• Es zeigt die 3 eine schematische Draufsicht einer beispielhaften Ausgestaltung eines organischen optoelektronischen Bauteils.
• Es zeigen die 4A und 4B Schnittansichten beispielhafter Ausgestaltungen eines hier beschriebenen organischen optoelektronischen Bauteils.

Further advantages and advantageous embodiments and further developments of the organic optoelectronic component will become apparent from the following, in connection with the figures illustrated embodiments.

• It show the 1A - 1G Sectional views of various embodiments of a body of an organic optoelectronic device.
• It show the 2A - 2C Sectional views of pores, which are arranged in an oxide layer of a body of an organic optoelectronic device.
• It shows the 3 a schematic plan view of an exemplary embodiment of an organic optoelectronic device.
• It show the 4A and 4B Sectional views of exemplary embodiments of an organic optoelectronic device described here.

The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements may be exaggerated in size for better representability and / or better intelligibility.

The 1A shows a schematic sectional view of a body described here 20 an organic optoelectronic device 1 according to a first embodiment. The body 20 comprises a carrier layer 21 , an oxide layer 22 and an optional further oxide layer 23 , The oxide layer 22 is on a first major surface 21a the carrier layer 21 arranged. The further oxide layer 23 is at the oxide layer 22 remote second major surface 21b the carrier layer 21 arranged. For example, the carrier layer 21 completely at their major surfaces through the oxide layer 22 and the further oxide layer 23 covered. In particular, the oxide layer 22 and the carrier layer 21 in direct contact with each other and are connected monolithically. Next are the carrier layer 21 and the further oxide layer 23 in direct contact with each other and are connected monolithically. In particular, the oxide layer 22 and the further oxide layer 23 with the carrier layer 21 cohesively connected. For example, the connections between the oxide layer 22 and the carrier layer 21 and between the further oxide layer 23 and the carrier layer 21 can only be solved by destroying one of the layers.

The carrier layer is formed, for example, with a metal or an alloy of metals. In particular, the carrier layer is formed with at least one of the metals aluminum, tin, titanium, tantalum, niobium, magnesium or an alloy which contains at least one of these metals. For example, the oxide layer is formed with an oxidized form of one of the metals aluminum, tin, titanium, tantalum, niobium, magnesium or an oxidized form of an alloy containing at least one of these metals. In particular, the oxide layer is formed with an oxidized form of the metal or the alloy of metals, with the unoxidized form of which the carrier layer is formed. For example, the oxide layer 22 and / or the further oxide layer 23 formed by oxidation of a starting material. In particular, the oxide layer 22 and / or the further oxide layer produced by anodizing. In particular, the starting material is formed with the same material as the carrier layer. In particular, the carrier layer 21 Part of the starting material, its surface for the preparation of the oxide layer 22 and / or the further oxide layer 23 was oxidized. By way of example, the oxide layer, measured perpendicular to the first 21a or second 21b main surface, has a thickness of at least 2 μm, preferably at least 5 μm, in particular at least 10 μm.

The 1B shows a sectional view of a body 20 an organic optoelectronic device described here 1 according to a second embodiment. In this embodiment, the body has a carrier layer which is on the first main side 21a an oxide layer 22 having. At the oxide layer 22 facing away from the second main page 21b the carrier layer 21 is an optional further oxide layer 23 arranged. The oxide layers stand with the carrier layer 21 in direct contact and are with this cohesively connected. In contrast to the first embodiment, end faces are also in the second embodiment 21c the carrier layer 21 , which are the main surfaces of the carrier layer 21 connect together, from the oxide layer 22 or the further oxide layer 23 covered. In particular, the carrier layer 21 completely from all sides through the oxide layer 22 and the further oxide layer 23 covered. The oxide layer 22 and the further oxide layer 23 stand in the area of the faces 21c of the carrier 21 in direct mechanical contact with each other and are materially interconnected. In particular, the oxide layer 22 and the further oxide layer formed with the same material. For example, the oxide layer 22 and the further oxide layer 23 Within the manufacturing tolerances the same thickness.

The 1C shows a third embodiment of a body 20 an organic optoelectronic device described here 1 , The body 20 comprises a carrier layer 21 and an oxide layer 22 , The oxide layer 22 is on a major surface of the carrier layer 21 arranged. The carrier layer 21 and the oxide layer 22 are materially firmly bonded together mechanically. In contrast to the first and second embodiments, which in the 1A and 1B are shown, is the first major surface 21a the carrier layer 21 free from an oxide layer. For example, the carrier layer may be due to the production 21 only on the second main surface 21b have been oxidized.

The 1D shows a fourth embodiment of a body 20 an organic optoelectronic device described here 1 , The body 20 comprises a carrier layer 21 , an adhesion layer 24 and an oxide layer 22 , The adhesion layer 24 is at the second major surface 21b the carrier layer 21 arranged. On the carrier layer 21 opposite side of the adhesion layer 24 is the oxide layer 22 arranged. The adhesion layer 24 is cohesively mechanically fixed to the carrier layer 21 and the oxide layer 22 connected.

For example, the carrier layer 21 be formed in this embodiment with a ceramic material or a metal. In particular, the oxide layer 22 one from the carrier layer 21 different material on. In particular, the material is the oxide layer 22 not by oxidation of the material of the carrier layer 21 produced. Rather, the oxide layer 22 produced by the oxidation of another material. For example, the other material which was the starting material for the oxide layer 22 is, by means of the adhesion layer 24 attached to the carrier layer and then electrically oxidized in an anodizing process. In particular, the other material is completely electrically oxidized. Alternatively, the other material is partially electrically oxidized so that between the adhesion layer 24 and the oxide layer prepared by anodization 22 Remnants of the other material are arranged. In particular, the other material may be completely electrically oxidized by anodization, so that between the oxide layer 22 and the adhesion layer 24 no other material is arranged.

The 1E shows the sectional view of a body 20 an organic optoelectronic device described here 1 according to a fifth embodiment. The body 20 comprises a carrier layer 21 and two adhesion layers 24 respectively at the opposing first 21a and second 21b major surfaces of the carrier layer 21 are arranged. At opposite major surfaces of the adhesive layers 24 is an oxide layer 22 or a further oxide layer 23 arranged. The carrier layer is mechanically strong via a cohesive connection with the adhesion layer 24 connected. The adhesion layers 24 are mechanically strong via a cohesive connection with the oxide layer 22 or the further oxide layer 23 connected. For example, the carrier layer 21 be formed in this embodiment with a ceramic material or a metal. In particular, the oxide layer 22 and / or the further oxide layer 23 a different material from the carrier layer 21. In particular, the material is the oxide layer 22 not by oxidation of the material of the carrier layer 21 produced.

The 1F shows a sectional view of a body 20 an organic optoelectronic device 1 according to a sixth embodiment. The body 20 includes a carrier 25 , an adhesion layer 24 , a carrier layer 21 and an oxidation layer 22 , The adhesion layer 24 is on a major surface of the carrier 25 arranged. The adhesive layer and the carrier 25 are mechanically fixed to each other via a material connection. On the carrier 25 opposite side of the adhesion layer 24 is the carrier layer 21 arranged. The adhesion layer 24 and the carrier layer are in direct contact with each other and are connected to each other via a cohesive connection. On the adhesion layer 24 opposite side of the carrier layer 21 is the oxide layer 22 arranged. For example, the material is the oxide layer 22 by oxidation of the material of the carrier layer 21 produced. For example, the carrier layer 21 and the carrier 25 not formed with the same material. In particular, the material is the oxide layer 22 not by oxidation of the material of the carrier 25 produced. For example, the carrier 25 formed with a ceramic material and the oxide layer formed with a metal oxide

The 1G shows a seventh embodiment of a body 20 an organic optoelectronic device described here 1 , The body 20 includes a carrier 25 , on whose opposite main sides in each case an adhesion layer 24 is arranged. The adhesion layers 24 and the carrier 25 are in direct mechanical contact with each other and are materially interconnected via a non-detachable connection. The opposite sides of the adhesive layers 24 are each in direct contact with a carrier layer 21 , The carrier layers 21 are by means of a material connection in each case with the adhesion layer 24 mechanically firmly connected. On the opposite sides of the carrier layers 21 is an oxide layer 22 or a further oxide layer 23 arranged. The oxide layer 22 or the further oxide layer 23 are each in direct contact with the carrier layers 21 and are mechanically firmly connected via a material connection with these. In particular, the material is the oxide layer 22 and the further oxide layer 23 by oxidation of the adjacent carrier layers 21 each produced. In particular, the material is the oxide layer 22 and the material of the further oxide layer 23 not by oxidation of the material of the carrier 25 produced.

The following designs, features related to the oxide layer 22 and / or the further oxide layer 23 are implicitly applicable to both the oxide layer 22 as well as for the further oxide layer 23 ,

The 2A shows a sectional view of the pores 220 of a body 20 an organic optoelectronic device described here 1 according to a first embodiment. The oxide layer 22 has, for example, a thickness of at least 2 μm. In particular, the oxide layer 22 a thickness of at least 5 microns, preferably at least 10 microns, on. In the oxide layer 22 are pores 220 arranged from all sides completely through the material of the oxide layer 22 be limited. In the present embodiment, the pores 220 partly with a conversion material 202 filled. The conversion material is, for example, a ceramic phosphor, quantum dots or quantum electrodes. For example, a conversion material is only partially used along a lateral direction 202 in the pores of the oxidation layer 22 arranged. In addition, the oxidation layer may have areas in which the pores 220 not with a conversion material 202 are filled.

Alternatively or additionally, the pores are filled, for example, with a material which, with respect to the thermal properties, of the material of the oxide layer 22 and / or the further oxide layer 23 different. In particular, the material which is arranged in the pores is a non-gaseous material. Advantageously, the arrangement of a material with high thermal conductivity in the operation of the component 1 resulting heat to be derived particularly well. Alternatively, by means of the arrangement of materials in the pores 220, which have a low thermal conductivity, by means of the oxidation layer 22 Regions are thermally decoupled from each other.

The pores have a main extension direction perpendicular to the main surface of the carrier layer 21 runs. In particular, to the front page 21c the carrier layer adjacent oxide layers pores 220 have, whose main extension plane perpendicular to the end face 21c the carrier layer 21 runs.

The first main area 21a the carrier layer 21 is structured in certain areas. For example, the first major surface 21a by means of laser radiation after the production of the oxide layer 22 on the surface of the carrier layer 21 generated. In particular, the wavelength of the laser radiation is selected so that the material of the oxide layer is substantially transparent to the laser radiation. During the production of the structuring, the laser radiation, for example, passes through the oxide layer and becomes on the first main surface 21a the carrier layer 21 absorbed. Advantageously, it is thus possible to produce a pattern which is formed by the material of the oxide layer 22 is protected.

The 2 B shows a sectional view of a second embodiment of the pores 220 of a body 20 an organic optoelectronic device described here 1 , In this embodiment, the pores are 220 from the backing layer 21 opposite side partly freely accessible.

In other words, some pores 220 are not completely covered on all sides by the material of the oxide layer 22 limited. For example, unclogged pores that are freely accessible from the outside, the roughness of the carrier layer 21 opposite side of the oxide layer 22 influence. Advantageously, in areas of unclogged pores 220 especially good another material on the oxide layer 22 be arranged and with the oxide layer 22 make a particularly stable mechanical connection.

The 2C shows the sectional view of a third embodiment of the pores 220 of a body 20 an organic optoelectronic device described here 1 , In this embodiment, the carrier 21 facing away surface 22 partially roughened. For example, the surface in this area may be roughened, as the surface of the starting material from which the oxide layer 22 is already roughened regionally. Alternatively, the surface of the oxide layer 22 by means of an etching process or by means of laser structuring after the production of the oxide layer 22 roughened. For example, the thickness of the oxide layer varies 22 along a lateral direction measured perpendicular to the main extension plane of the oxide layer 22 ,

Next is in some of the pores 220 a dye 201 arranged. For example, the dye 201 from the backing layer 21 opposite side of the oxide layer 22 visible, noticeable. In particular, conversion materials 202 and / or dyes 201 only partially along a lateral direction in the pores 220 arranged. Lateral directions are parallel to the main direction of extension of the body 20 , For example, patterns or lettering on the body can be displayed in color.

The 3 shows a schematic plan view of an organic optoelectronic device described here 1 , The organic optoelectronic component 1 comprises an organic active layer 10 on a body 20 is arranged. The body 20 surmounts the organic active layer 10 in lateral directions. The organic active layer 10 is on the side of the oxide layer 20 of the body 20 is arranged. In particular, in the area where the body with the organic active layer 10 connected, the oxide layer 22 be visible from the outside.

The organic optoelectronic component 1 has two structuring 300 on. One of the structuring 300 is from the organic active layer 10 covered. The structuring 300 are due to a modification in the oxide layer 22 generated. For example, it is the structuring 300 order of a dye 201 or a conversion material 202 in the pores 220 in the oxide layer 22 of the body 20 , Alternatively, it is the structuring 300 around areas where the roughness of the surface of the body 20 is changed compared to the laterally surrounding areas. Alternatively, it is the structuring 300 around areas where the first main area 21a the carrier layer 21 , as in 2A represented, is structured.

Next, the oxide layer 22 of the body 20 a first emission range 11 in which a dye 201 in the pores 220 is arranged. This first emission area 11 is from the organic active layer 10 covered. Next, the oxide layer 22 an area in which a conversion material 202 in the pores 220 is arranged. In the area where the conversion material 202 from the organic active layer 10 is covered, the organic optoelectronic component has a second emission region 12 on. For example, the area where the conversion material is 202 is arranged, partially through the organic active layer 10 covered. For example, the organic active layer 10 transparent, leaving the dye 201 in the off state through the organic active layer 10 is visible. In particular, during operation of the organic optoelectronic device 1 in the organic active layer 10 generated electromagnetic radiation at least partially on the oxide layer 22 , In particular, the conversion material 202 adapted to the electromagnetic radiation generated in the operation, which on the conversion material 202 meets, to convert into radiation of a longer wavelength. Both with the conversion material 202 and with the dye 201 the color of the emitted light can be influenced.

Along a lateral direction parallel to the main plane of extent of the organic optoelectronic component, the oxide layer may have different regions in which, for example, they have a different roughness, pores which are freely accessible from the outside and which are not freely accessible from the outside 220 in which partially a conversion material 202 and / or a dye 201 is arranged. These areas can at least partially pass through the organic active layer 10 be covered.

The 4A shows a schematic sectional view of a first embodiment of an organic optoelectronic device described here 1 , The organic optoelectronic component 1 has a body 20 on. The body 20 For example, one of the in the 1A to 1G have described structures. In particular, combinations of the described structures are possible. Next, the body can be an oxide layer 22 or a further oxide layer 23 have their pores 220 in the 2A to 2C may have described structure.

On the oxide layer 22 of the body 20 is a first electrode 101 and a second electrode 102 partially overlapping. The first electrode 101 and the second electrode 102 are by means of an insulating material 105 electrically isolated from each other. Between the first electrode 101 and the second electrode 102 is an organic active layer 10 arranged.

In normal operation, the organic active layer 10 over the first electrode 101 and the second electrode 102 electrically conductive contacted and energized. The second electrode 102 is transparent to in the organic active layer 10 generated electromagnetic radiation. A portion of the generated electromagnetic radiation occurs during operation by the side facing away from the body of the optoelectronic device 1 straight from. Another part of the organic optoelectronic component 1 generated electromagnetic radiation first strikes the first electrode 101 which, for example, reflective to those in the organic active layer 10 generated electromagnetic radiation can be. For example, the first 101 and / or the second 102 electrode can be arranged in regions on the oxide layer, so that the surface of the oxide layer is partially visible.

Alternatively, the first electrode 101 be transparent to the generated electromagnetic radiation, so that the further part of the radiation through the first electrode 101 on the oxide layer 22 of the body 20 meets. The roughness of the oxide layer, one in the pores 220 arranged dye 201 and / or a conversion material 202 can interact with the electromagnetic radiation and so the emission properties of the organic optoelectronic device 1 influence.

An encapsulation 100 covers the first electrode 101 , the organic active layer 10 , the second electrode 102 and the insulating materials 105 at her the body 20 opposite side. The encapsulation 100 is formed, for example, with a material which is at least partially soluble in the organic active layer 10 generated electromagnetic radiation is transparent. In particular, the first electrode 101 and the second electrode 102 freely accessible from outside, so that the first 101 and the second 102 electrodes are electrically contactable from the outside.

For example, this is the body 20 around the mechanically bearing component. In particular, the body is 20 the substrate on which during the manufacture of the organic optoelectronic device 1 the said structures are applied one after the other. For example, it is the body 20 around a mechanically flexible substrate, which is bendable. In particular, the organic optoelectronic component 1 a flexible component.

The 4B shows the sectional view of a second embodiment of an organic optoelectronic device 1 , In contrast to the optoelectronic component 1, which in the 4A is shown, here is the body 20 not the substrate on which the other structures are made. The organic optoelectronic component 1 has a substrate 40. The substrate 40 is for the normal operation of the organic optoelectronic device 1 emitted electromagnetic radiation transparent. For example, during operation of the organic optoelectronic device 1 emitted electromagnetic radiation through the substrate 40. The substrate 40 is, for example, a mechanically supporting structure, on whose main surface the further structures of the organic optoelectronic component 1 are made.

On a main surface of the substrate 40 are a first electrode 101 and a second electrode 102 arranged. The first 101 and the second 102 electrodes are by means of an insulating material 105 electrically isolated from each other. Between the first electrode 101 and the second electrode 102 is an organic active layer 10 arranged. On the side facing away from the substrate of the first electrode 101 , the organic active layer 10 , the second electrode 102 and the insulating material 105 is an encapsulation 100 arranged. The encapsulation 100 For example, it is designed to be the organic active layer 10 to protect against environmental influences, especially moisture and oxygen.

On the side facing away from the substrate 40 of the encapsulation 100 is a body 20 arranged. For clarity, the pores are 220 the oxide layer 22 and the carrier layer 21 not shown here. For example, the body towers over 20 the organic active layer 10 in lateral directions.

In particular, such as in connection with the 2A . 2C and 3 described different dyes 201 or conversion materials 202 along a lateral direction in the pores 220 the oxide layer 22 of the body 20 be arranged. For example, so different emission regions can be defined in an organic optoelectronic component. Such emission regions may differ, for example, from one another by the color or intensity of the emitted electromagnetic radiation. In particular, by means of different concentrations of the dyes in different emission ranges 11 . 12 a different brightness of the emission areas 11 . 12 be achieved. Furthermore, the emission ranges differ 11 . 12 for example, by their color appearance in the off state.

In particular, the body can 20 on its side facing away from the encapsulation 100 another oxide layer 23 exhibit. The further oxide layer can, as in the 2A to 2C be designed described. For example, the pores of the further oxide layer may be filled with a black dye. In particular, the pores 220 the further oxide layer 23 filled with a material having a higher thermal conductivity than the material of the further oxide layer 23 having. In particular, in the pores 220 the further oxide layer 23 other materials arranged than in the pores 220 the oxide layer 22 ,

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

LIST OF REFERENCE NUMBERS

1

Organic opto-electronic component

10

organic active layer

11

first emission area

12

second emission area

100

encapsulation

101

first electrode

102

second electrode

105

insulating material

20

body

21

backing

21a

first main area

21b

second main surface

21c

face

22

oxide

23

further oxide layer

25

carrier

220

pore

201

dye

202

conversion material

24

adhesion

300

structuring

Claims (19)

Organic optoelectronic component (1) with an organic active layer (10), and - A body (20) which is connected to the organic active layer (10), wherein the body (20) comprises a carrier layer (21) and an oxide layer (22), - The oxide layer (22) is formed with an oxide of at least one metal, and - The support layer (21) and the oxide layer (22) are interconnected. An organic optoelectronic component (1) according to the preceding claim, wherein the oxide layer (22) has pores (220). Organic optoelectronic component (1) according to the preceding claim, in which the body (20) is the substrate (40) of the optoelectronic component (1). Organic optoelectronic component (1) according to one of the preceding claims, wherein the carrier layer (21) has a first major surface (21a) and a second major surface (21b), the first major surface (21a) being covered by the oxide layer and the second major surface (21b) being covered by another oxide layer (23), and the carrier layer (21) monolithically connects the oxide layer (22) and the further oxide layer (23). Organic optoelectronic component (1) according to one of Claims 1 or 2 in which an adhesion layer (23) is arranged between the carrier layer (21) and the oxide layer (22), wherein the adhesion layer (23) is in direct contact with the carrier layer (21) and the oxide layer (22). Organic optoelectronic component (1) according to one of the preceding claims, wherein the carrier layer (21) is formed with a metal, and the oxide layer (22) and / or the further oxide layer (23) is formed with the oxide of the metal. Organic optoelectronic component (1) according to one of the preceding claims, in which the oxide layer (22) and / or the further oxide layer (23) has a thickness of at least 2 μm and the pores (220) have a main extension direction (P) which is transverse to the first (21a) and / or second (21b). Main surface runs. Organic optoelectronic component (1) according to one of the preceding claims, in which at least in some of the pores (220) a non-gaseous material is arranged, which differs with respect to the thermal properties of the material of the pores (220) surrounding material of the oxide layer (22) and / or the further oxide layer (23) , Organic optoelectronic component (1) according to one of the preceding claims, in which at least in some of the pores (220) a dye (201) and / or a conversion material (202) is arranged. Organic optoelectronic component (1) according to one of the preceding claims, in which at least some of the pores (220) which are arranged on the side of the carrier layer (21) facing away from the organic active layer (10) are filled with a black dye (221) are. Organic optoelectronic component (1) according to one of Claims 8 to 9 in which other dyes (221) and / or conversion materials (222) are arranged in the pores (220) of the oxide layer (22) than in the pores (220) of the further oxide layer (23). Organic optoelectronic component (1) according to one of the preceding claims, wherein in a lateral direction the pores (220) are filled with different dyes (221) and / or conversion materials (222). Organic optoelectronic component (1) according to one of the preceding claims, in which the oxide layer (22) and / or the further oxide layer (23) is at least locally free of pores on its side remote from the carrier layer. Organic optoelectronic component (1) according to one of the preceding claims, in which the thickness of the oxide layer (22) and / or the further oxide layer (23), measured perpendicular to the lateral plane, varies in the lateral direction. Organic optoelectronic component (1) according to one of the preceding claims, in which the roughness (R) of the oxide layer (22) and / or the further oxide layer (23) varies in the lateral direction. Organic optoelectronic component (1) according to one of the preceding claims, in which the body (20) projects beyond the organic active layer (10) in lateral directions. Organic optoelectronic component (1) according to one of the preceding claims, in which the carrier layer (21) is laser-structured on its first (21a) and / or second (21b) main surface. An organic optoelectronic component (1) according to one of the preceding claims, wherein light emitted during operation strikes the oxide layer (22) and is influenced by the dyes (221) and / or conversion materials (222). Organic optoelectronic component (1) according to one of the preceding claims, in which, in the region in which the body is connected to the organic active layer (10), the oxide layer (22) is visible from outside.

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