DE102016111573B4 - MULTIFUNCTIONAL CONNECTING MODULE AND SUPPORT WITH MULTIFUNCTIONAL CONNECTING MODULE ATTACHED TO IT - Google Patents

Abstract

A connection module comprising:
a metal clip (702) comprising a first end portion (704), a second end portion (706) and a central portion (708) extending between the first and second end portions (704, 706), the first end portion ( 704) is configured for external attachment to a semiconductor die or semiconductor chip assembly attached to a carrier or to a metal region of the carrier, the second end portion (706) for external attachment to another metal region of the carrier or to a / another semiconductor die or semiconductor die assembly attached to the carrier is configured; and
a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) operating to sense a magnetic field produced by current flowing through the metal clip (702),
wherein the metal terminal (702) is embedded in an encapsulation (712) and wherein electrical contact points (714) are arranged on a side of the magnetic field sensor (104) which faces away from the metal terminal (702), the electrical contact points (714) in each case are designed for attaching a bonding wire, and
wherein a surface of the central portion (708) of the metal clip (702) facing away from the magnetic field sensor (104) is covered by the encapsulation (712).

Description

The present application relates to multifunctional connection modules for mounting on carriers, and in particular to multifunctional connection modules with integrated magnetic field sensors.

Power assemblies contain one or more power semiconductor chips such as, for example, power transistor and / or power diode chips, which are fastened to a substrate such as, for example, a leadframe or a ceramic substrate that has a structured metallized surface. In either case, accurate current and / or temperature measurements are required to ensure reliable and safe operation of the power assembly. Some current / temperature sensors are implemented using external components, such as shunt resistors, which are highly accurate but complicate the construction of the assembly. Other conventional approaches incorporate an electrical type sensor into the power semiconductor chip. This approach reduces the complexity of designing the assembly, but at the cost of reduced precision. Typical integrated sensors of the electrical type, such as a diode, the voltage of which is representative of temperature or current, have poor sensing accuracy, for example ± 28%. Sensing accuracy can be improved with custom calibration, for example to ± 2%, but this requires calibration effort, which increases costs. Some applications run with a defined safety margin or shutdown feature in order to avoid overcurrent / heat and damage to the power semiconductor devices. The same problems apply to carriers such as circuit boards such as PCBs (printed circuit boards), and sensing the current and / or temperature of components attached to a board can produce inaccurate results or require expensive solutions. the DE 10 2011 056 187 A1 discloses a connection module with a metal clamp and a magnetic field sensor attached to the metal clamp and designed to determine a current flow through the metal clamp. Other comparable connection modules can be found in the DE 10 2013 113 186 A1 disclosed.

It is an object of the invention to provide an improved connection module and carrier structure.

The object of the invention can be achieved by the features of the independent claims. Embodiments and further developments are specified in the dependent claims.

According to one embodiment of a connection module, the connection module comprises a metal clip having a first end section, a second end section and a central section extending between the first and second end sections. The first end portion is configured for external attachment to a semiconductor die or die assembly that is attached to a carrier or to a metal portion of the carrier. The second end portion is configured for external attachment to another metal region of the carrier or to another semiconductor die or semiconductor die assembly that is attached to the carrier. The connection module further comprises a magnetic field sensor which is attached to the metal clamp. The magnetic field sensor works to sense a magnetic field produced by current flowing through the metal clamp.

According to one embodiment of a carrier structure, the carrier structure comprises a carrier which has a plurality of metal regions that are embedded in an electrically insulating material or attached to it, a first semiconductor bare chip or semiconductor chip assembly, which is attached to a first one of the metal regions of the carrier is attached, and a first connection module. The first connection module includes a metal clip having a first end portion, a second end portion, and a central portion extending between the first and second end portions. The first end section is attached to the first metal region of the carrier or to the first semiconductor die or semiconductor chip assembly. The second end portion is attached to a second metal region of the carrier or to a second semiconductor die or semiconductor chip assembly attached to the carrier. The first connection module further comprises a magnetic field sensor which is attached to the metal clamp. The magnetic field sensor works to sense a magnetic field produced by current flowing through the metal clamp.

Those skilled in the art will recognize additional features and advantages after reading the following detailed description and viewing the accompanying drawings.

• 1A stellt eine Draufsicht von oben nach unten einer ersten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 1B stellt eine Querschnittsansicht der Baugruppe entlang der mit A-A' gekennzeichneten Linie in 1A dar.
• 2 stellt eine Draufsicht von oben nach unten einer zweiten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 3 stellt eine Draufsicht von oben nach unten einer dritten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 4 stellt eine Draufsicht von oben nach unten einer vierten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 5 stellt eine Draufsicht von oben nach unten einer fünften Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 6 stellt eine Draufsicht von oben nach unten einer sechsten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 7 stellt eine Draufsicht von oben nach unten einer siebten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 8 stellt eine Draufsicht von oben nach unten einer achten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 9A stellt eine Draufsicht von oben nach unten einer neunten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 9B stellt eine Querschnittsansicht der Baugruppe entlang der mit B-B' gekennzeichneten Linie in 9A dar.
• 10 stellt eine Draufsicht von oben nach unten einer zehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 11A stellt eine Draufsicht von oben nach unten einer elften Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 11B stellt eine Querschnittsansicht der Baugruppe entlang der mit C-C' gekennzeichneten Linie in 11A dar.
• 12 stellt eine Draufsicht von oben nach unten einer zwölften Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 13A stellt eine Draufsicht von oben nach unten einer dreizehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 13B stellt eine Querschnittsansicht der Baugruppe entlang der mit D-D' gekennzeichneten Linie in 13A dar.
• 14A stellt eine Draufsicht von oben nach unten einer vierzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 14B stellt eine Querschnittsansicht der Baugruppe entlang der mit E-E' gekennzeichneten Linie in 14A dar.
• 15A stellt Vektoren des Magnetfelds dar, das durch den Strom produziert wird, der durch eine U-förmige Metallklemme fließt.
• 15B stellt eine Schnittansicht der U-förmigen Metallklemme, die in 15A gezeigt ist, entlang der mit A-A gekennzeichneten Linie dar.
• 16A stellt eine Draufsicht von oben nach unten einer fünfzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 16B stellt eine vergrößerte Ansicht eines Bereichs der in 16A gezeigten Baugruppe dar.
• 17 stellt eine Draufsicht von oben nach unten einer sechzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 18 stellt eine Draufsicht von oben nach unten einer siebzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 19A stellt eine perspektivische Ansicht einer achtzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 19B stellt eine vergrößerte Schnittansicht eines Bereichs der in 19A gezeigten Baugruppe dar.
• 20 stellt eine Schnittansicht einer neunzehnten Ausführungsform einer Halbleiterbaugruppe dar, die einen integrierten Magnetfeldsensor aufweist.
• 21 bis 23 stellen jeweilige Schnittansichten von drei unterschiedlichen Ausführungsformen eines eigenständigen multifunktionalen Verbindungsmoduls dar, das einen Magnetfeldsensor enthält.
• 24 stellt eine Draufsicht der in 21 gezeigten Ausführungsform des multifunktionalen Verbindungsmodul dar.
• 25 stellt eine Draufsicht der in 22 und 23 gezeigten Ausführungsformen des multifunktionalen Verbindungsmodul dar.
• 26 und 27 stellen jeweils Draufsichten der in den 22 und 23 gezeigten Ausführungsformen der multifunktionalen Verbindungsmodule dar, wobei der Magnetfeldsensor arbeitet, um Differenzabfühlen zu implementieren.
• 28 stellt eine Draufsicht einer ersten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 29A stellt eine Draufsicht einer zweiten Ausführungsform eines Trägeraufbaus dar, der die in 21 gezeigte Version des multifunktionalen Verbindungsmoduls verwendet.
• 29B stellt eine Schnittansicht des Trägeraufbaus von 29A entlang der mit F-F' in 29A gekennzeichneten Linie dar.
• 29C stellt dieselbe Schnittansicht des Trägeraufbaus entlang der mit F-F' gekennzeichneten Linie in 29A dar, jedoch mit der in 22 gezeigten Version des multifunktionalen Verbindungsmoduls.
• 29D stellt dieselbe Schnittansicht des Trägeraufbaus entlang der mit F-F' gekennzeichneten Linie in 29A dar, jedoch mit der in 23 gezeigten Version des multifunktionalen Verbindungsmoduls.
• 30 stellt eine Draufsicht einer dritten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 31 stellt eine Draufsicht einer vierten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 32 stellt eine Draufsicht einer fünften Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 33 stellt eine Draufsicht einer sechsten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 34 stellt eine Draufsicht einer siebten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 35 stellt eine Draufsicht einer achten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 36 stellt eine Draufsicht einer neunten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.
• 37 stellt eine Draufsicht einer zehnten Ausführungsform eines Trägeraufbaus dar, der das multifunktionale Verbindungsmodul verwendet.

The elements of the drawings are not necessarily to scale relative to one another. The same reference numbers indicate corresponding, similar parts. The features of the various illustrated embodiments can be combined, provided that they are not mutually exclusive. Embodiments are shown in the drawings and described in detail in the following description.

• 1A FIG. 10 shows a top-down plan view of a first embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 1B FIG. 13 is a cross-sectional view of the assembly taken along the line marked AA 'in FIG 1A represent.
• 2 FIG. 10 shows a top-down plan view of a second embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 3 FIG. 10 shows a top-down plan view of a third embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 4th FIG. 10 shows a top-down plan view of a fourth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 5 shows a plan view from top to bottom of a fifth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 6th shows a plan view from top to bottom of a sixth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 7th shows a plan view from top to bottom of a seventh embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 8th FIG. 11 illustrates a top-down plan view of an eighth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 9A FIG. 10 shows a top-down plan view of a ninth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 9B FIG. 13 is a cross-sectional view of the assembly taken along the line marked BB 'in FIG 9A represent.
• 10 FIG. 10 shows a top-down plan view of a tenth embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 11A FIG. 10 shows a top-down plan view of an eleventh embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 11B FIG. 13 shows a cross-sectional view of the assembly along the line marked CC 'in FIG 11A represent.
• 12th FIG. 10 shows a top-down plan view of a twelfth embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 13A FIG. 10 shows a top-down plan view of a thirteenth embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 13B FIG. 13 is a cross-sectional view of the assembly taken along the line marked DD 'in FIG 13A represent.
• 14A shows a plan view from top to bottom of a fourteenth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 14B FIG. 13 is a cross-sectional view of the assembly taken along the line labeled EE 'in FIG 14A represent.
• 15A represents vectors of the magnetic field produced by the current flowing through a U-shaped metal clamp.
• 15B FIG. 10 is a sectional view of the U-shaped metal clip shown in FIG 15A along the line marked AA.
• 16A shows a plan view from top to bottom of a fifteenth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 16B FIG. 11 is an enlarged view of a portion of the FIG 16A assembly shown.
• 17th shows a plan view from top to bottom of a sixteenth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 18th shows a plan view from top to bottom of a seventeenth embodiment of a semiconductor assembly that has an integrated magnetic field sensor.
• 19A illustrates a perspective view of an eighteenth embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 19B FIG. 11 is an enlarged sectional view of a portion of FIG 19A assembly shown.
• 20th illustrates a sectional view of a nineteenth embodiment of a semiconductor assembly having an integrated magnetic field sensor.
• 21 until 23 represent respective sectional views of three different embodiments of a stand-alone multifunctional Connection module that contains a magnetic field sensor.
• 24 represents a top view of the in 21 shown embodiment of the multifunctional connection module.
• 25th represents a top view of the in 22nd and 23 shown embodiments of the multifunctional connection module.
• 26th and 27 represent top views of the in the 22nd and 23 The illustrated embodiments of the multifunctional interconnect modules, wherein the magnetic field sensor operates to implement differential sensing.
• 28 Figure 10 shows a top view of a first embodiment of a support structure using the multifunctional connection module.
• 29A FIG. 11 shows a top view of a second embodiment of a support structure which incorporates the one shown in FIG 21 shown version of the multifunctional connection module is used.
• 29B FIG. 13 is a sectional view of the support structure of FIG 29A along the with FF 'in 29A marked line.
• 29C FIG. 13 shows the same sectional view of the support structure along the line marked FF 'in FIG 29A dar, but with the in 22nd version of the multifunctional connection module shown.
• 29D FIG. 13 shows the same sectional view of the support structure along the line marked FF 'in FIG 29A dar, but with the in 23 version of the multifunctional connection module shown.
• 30th Figure 12 illustrates a top view of a third embodiment of a carrier assembly using the multifunctional interconnect module.
• 31 Figure 10 illustrates a top view of a fourth embodiment of a support structure using the multifunctional interconnect module.
• 32 Figure 10 shows a plan view of a fifth embodiment of a support structure using the multifunctional connection module.
• 33 Figure 12 shows a plan view of a sixth embodiment of a support structure using the multifunctional connection module.
• 34 Figure 12 shows a plan view of a seventh embodiment of a support structure using the multifunctional connection module.
• 35 Figure 10 shows a plan view of an eighth embodiment of a support structure using the multifunctional connection module.
• 36 Figure 12 illustrates a top view of a ninth embodiment of a support structure employing the multifunctional connection module.
• 37 Figure 3 illustrates a plan view of a tenth embodiment of a support structure using the multifunctional connection module.

Embodiments described here provide the integration of a magnetic field sensor such as a magnetoresistive sensor (XMR sensor) or a Hall sensor in a semiconductor assembly or an independent multifunctional connection module for integrated current and / or temperature measurement. The magnetic field sensor generates a signal in response to a magnetic field produced by current flowing in a current path of a semiconductor chip contained in the package or near the multifunctional interconnect module. The level of the signal is proportional to the amount of current that flows in the current path and indicates the current consumption of the semiconductor chip and / or the temperature of the assembly or of the multifunctional connection module. The semiconductor assembly or the multifunctional connection module can be provided with or without galvanic isolation between the magnetic field sensor and the semiconductor chip (in the case of an assembly) or the metal clamp (in the case of a multifunctional connection module).

The magnetic field sensor can be integrated in the same semiconductor assembly as the semiconductor chip for which current and / or temperature measurements are desired, arranged outside the assembly on the current-carrying connections of the assembly or contained in an independent multifunctional connection module that is separate from the assembly being. For example, the magnetic field sensor can be embedded in the semiconductor chip, arranged on the semiconductor chip, arranged on one or more of the lines of the assembly, arranged above or below a metal clamp that is used in the semiconductor assembly for electrically connecting one or more of the lines to the Semiconductor chip or with another of the lines is included, or be arranged above or below a metal clamp, which is contained in a multifunctional connection module that is separate from the chip assembly.

In the case of a stand-alone multifunctional interconnect module, a bare chip or chip assembly can be attached to a carrier such as a printed circuit board (e.g., a PCB), a ceramic substrate, a plastic module, a molded module, a lead frame, etc., and the multifunctional interconnect module can be used are to establish an electrical connection between the chip and a metal area of the carrier, between the chip and another chip that is connected to is attached to the carrier, or to be formed between two different metal areas of the carrier. In any event, the term “on” as used herein indicates a position in contact with or in close proximity to and supported by an external surface, or to indicate an origin for attachment or support.

1A FIG. 13 illustrates a top-down plan view of a first embodiment of a semiconductor package, and FIG 1B FIG. 13 is a cross-sectional view of the assembly taken along the line marked AA 'in FIG 1A material for attaching the chip and chip metallizations are in the 1A and 1B not shown to simplify the illustration.

The semiconductor assembly includes a substrate that has multiple metal lines 100 and a semiconductor chip 102 that on a first off the lines 100-1 is appropriate. The assembly can contain a single semiconductor chip or more than one semiconductor chip. Any standard substrate for semiconductor assemblies can be used. For example, the substrate can be a lead frame that has a chip “paddle” line 100-1 at which the semiconductor chip 102 attached, and multiple signal and power lines 100-2 until 100-8 for providing signal and power connections to the semiconductor chip 102 having. In another example, the substrate can be a ceramic-based substrate such as a DCB substrate (directly copper-bonded substrate), an ABM substrate (active metal-soldered substrate) or a DAB substrate (directly aluminum-bonded substrate) in which one or both main sides of a ceramic base have a structured metallized surface that supports the lines 100 for attaching the semiconductor chip 102 form and signal and power connections with the semiconductor chip 102 provide. In other examples, the substrate can be a structured metal substrate, a printed circuit board (PCB), and so on. The semiconductor assembly can be any type of standard semiconductor assembly, the leads 100 for attaching the semiconductor chip 102 and providing signal and power connections for the semiconductor chip 102 having. For example, the semiconductor package may be a molded package, an open cavity package with or without a lid, an encapsulated polymer package, a PCB-based package, and so on. In any event, as used herein, the term “lead” refers to any insulated electrical conductor that is physically or electrically connected to an electrical device.

A magnetic field sensor 104 is in the same assembly as the semiconductor chip 102 integrated and in close proximity to a current path of the semiconductor chip 102 positioned so that the sensor 104 sense the magnetic field produced by the current flowing through the electrical path. According to the 1A and 1B The illustrated embodiment is the magnetic field sensor 104 over a metal clamp 106 arranged, which is contained in the semiconductor assembly. The metal clamp 106 connects one or more of the lines 100 with the semiconductor chip 102 . In one case the metal clamp is 106 made of copper. The metal clamp 106 however, it can be made of other materials. In any case, the magnetic field sensor generates 104 a signal in response to a magnetic field produced by electricity flowing in a current path of the semiconductor chip 102 flows. The rung is in 1B represented by arrows.

The level of the signal that is sent by the magnetic field sensor 104 is proportional to the amount of current flowing in the current path, and gives the power consumption of the semiconductor chip 102 and / or the temperature of the assembly. For example, in the case of a Hall sensor, a transducer in the magnetic field sensor varies 104 included is its output voltage in response to the magnetic field. In the case of a magnetoresistive sensor (XMR sensor) such as an anisotropic magnetoresistive sensor (AMR sensor), a giant magnetoresistive sensor (GMR sensor) or tunnel magnetoresistive sensor (TMR sensor), the electrical resistance of a metal, semimetal or semiconductor changes that is in the magnetic field sensor 104 is contained under the influence of the magnetic field. The orientation and configuration of the magnetic field sensor 104 may vary according to the type of sensor device used. In each case the level of the signal that is sent by the magnetic field sensor 104 is generated, a monotonically dependent response to the amount of current that is in the current path of the semiconductor chip 102 flows. This allows the current to flow through the semiconductor chip 102 and the temperature within the assembly can be measured at the same time.

For example, in the case of a power MOSFET chip, the current flow through the source or drain of the power MOSFET can be controlled by positioning the magnetic field sensor 104 can be accurately measured in close proximity to the source or drain current path of the device. In the case of an IGBT chip, the current flow through the emitter or collector of the IGBT can be controlled by positioning the magnetic field sensor 104 can be accurately measured in close proximity to the emitter or collector current path of the device. In the case of a power diode chip, the current flow through the anode or cathode of the power diode can be controlled by positioning the magnetic field sensor 104 can be accurately measured in close proximity to the anode or cathode current path of the device. Even if the signal coming through the magnetic field sensor 104 is generated is non-linear, it can be corrected, e.g. with a microcontroller.

In some applications the magnetic field sensor 104 are supplied with a significantly lower voltage or carry signals at a significantly lower voltage (for example 5 V) compared to the semiconductor chip 102 (e.g. 500 V, 1000 V or even higher). The magnetic field sensor 104 from the metal clamp 106 and therefore from the semiconductor chip 102 be galvanically isolated. In one embodiment, the magnetic field sensor is 104 from the metal clamp 106 by a spacer 108 spaced. The spacer 108 can be electrically conductive or electrically insulating. For example, the spacer 108 a conductive adhesive, sintered material, solder, etc. for applications in the low to medium voltage range (e.g. up to 500 V). In another example, the material of the spacer 108 be chosen to provide galvanic isolation. A conductive adhesive can act as the spacer 108 be used in the case when the terminal voltage and the microcontroller have no voltage difference or the voltage spikes on the terminal 106 blocked by other components. Otherwise, the spacer provides 108 galvanic isolation ready, for example with non-conductive adhesive. The thickness of the adhesive affects the response of the magnetic field sensor 104 and the level of galvanic isolation. The material and dimensions of the spacer can be selected to optimize the smallest detected current, largest detected current, and level of galvanic isolation.

The thickness of the spacer 108 can be chosen so that the strength of the magnetic field that enters the magnetic field sensor 104 occurs, is reduced to a non-destructive level. A relatively thick spacer is particularly advantageous for high current applications. In one embodiment, the spacer is 108 a semiconductor chip such as a silicon chip placed between the magnetic field sensor 104 and the metal clamp 106 is inserted. In other embodiments, the spacer 108 a / e polymer, ceramic, non-conductive adhesive, non-conductive foil or any other single or multilayer material, the magnetic field sensor 104 from the metal clamp 106 separates. Alternatively, the magnetic field sensor 104 directly on the metal clamp 106 be attached, e.g. by soldering, if the sensor 104 has a solderable back, or by an electrically non-conductive adhesive.

Electrical connections to the magnetic field sensor can be made by electrical conductors 110 such as wire bonds, wire ribbons, etc. attached to the magnetic field sensor at one end 104 and at the opposite end on one or more of the conduits 100 attached to the assembly. An additional electrical conductor 112 connects a separate contact point 114 on top of the semiconductor chip 102 electrically with a corresponding cable 100-2 of the assembly, e.g. to form a gate connection for a transistor chip. The metal clamp 106 may provide the drain (MOSFET) or collector (IGBT) connection in the case of a power transistor or the anode or cathode connection in the case of a power diode. An electrical connection to the back of the semiconductor chip 102 is through the line 100-1 the assembly that is on that side of the chip 102 is attached, provided. This electrical connection can be the source (MOSFET) or emitter (IGBT) connection in the case of a power transistor or the cathode or anode connection in the case of a power diode.

The semiconductor assembly can be molded or encapsulated with a non-conductive material 117 such as a casting compound, an adhesive, silicone, silicone gel, etc. The non-conductive material 117 is in 1A not shown to simplify the illustration. In addition to the reliability afforded by such a molding / encapsulant 117 provided are the dielectric properties of the molding / encapsulant 117 also good electrical isolation between the sensor 104 working on a relatively low voltage (e.g. 5 V) and the semiconductor chip 102 working on a relatively high voltage (e.g. several hundred or thousand volts).

2 FIG. 10 shows a top-down plan view of a second embodiment of the semiconductor package 2 The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast to this, however, are other, passive components 118 such as resistors and / or capacitors that comprise part of the sensing circuitry that controls the magnetic field sensor 104 also in the same assembly as the sensor 104 and the semiconductor chip 102 integrated. The passive components 118 are on different lines 100 connected to the assembly. Electric conductors 110 such as wire bonds, wire bands, etc. connect the passive components 118 with the magnetic field sensor 104 electric.

3 FIG. 3 illustrates a top-down plan view of a third embodiment of the semiconductor package 3 The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast, however, is a logic device 120 to control the magnetic field sensor 104 on the same metal clamp 106 attached on which the sensor 104 is arranged. Any standard logic device such as a microcontroller, ASIC (application specific integrated circuit), etc., used to control the operation of the magnetic field sensor 104 is able can be used. Electric conductors 110 such as wire bonds, wire ribbons, etc. connect the logic device 120 with one or more lines of the assembly electrical to establish electrical connections with the logic device 120 provide. Additional electrical conductors 122 such as wire bonds, wire ribbons, etc. connect the logic device 120 electrically with the magnetic field sensor 104 .

4th FIG. 10 shows a top-down plan view of a fourth embodiment of the semiconductor package 4th The embodiment shown is similar to that in FIG 3 embodiment shown. In contrast to this, however, are other, passive components 118 such as resistors and / or capacitors that comprise part of the sensing circuitry that makes up the logic device 120 and the magnetic field sensor 104 also in the same assembly as the sensor 104 , the logic device 120 and the semiconductor chip 102 integrated. The passive components 118 are on different lines 100 connected to the assembly. Electric conductors 110 such as wire bonds, wire bands, etc. connect the passive components 118 electrically with the logic device 120 and / or the magnetic field sensor 104 . So are the passive components 118 with the magnetic field sensor 104 and the logic device 120 electrically connected to form the desired sensing circuit.

5 FIG. 10 shows a top-down plan view of a fifth embodiment of the semiconductor package 5 The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast, however, the metal clamp 106 a tapered area 124 on, for which the width of the metal clamp 106 to less than or the same width as the magnetic field sensor 104 is reduced and the sensor 104 above the tapered area 124 is positioned. The tapered area 124 is between the wider opposite end regions 126 , 128 the metal clamp 106 inserted. The section of the tapered area 124 that is under the magnetic field sensor 104 is arranged and has a narrower width than the sensor 104 , is in 5 shown in dashed lines as this is part of the tapered area 124 by the magnetic field sensor 104 covered and therefore not visible.

6th FIG. 11 shows a top-down plan view of a sixth embodiment of the semiconductor package 6th The embodiment shown is similar to that in FIG 5 embodiment shown. In contrast, the metal clamp contains 106 further lateral branches 130 , 132 that are parallel to the tapered area 124 between the opposite end regions 126 , 128 extend. The lateral branches 130 , 132 are from the tapered area 124 spaced apart and not from the magnetic field sensor 104 covered. Adding the side branches 130 , 132 allows the metal clamp 106 can handle more current than the terminal configuration included in 5 is shown. However, more additional calibration effort and offset values may be required because the entire current path is not under the magnetic field sensor 104 runs. Thus represents the magnetic field generated by the magnetic field sensor 104 is sensed, not all of the current flowing through the path, but instead only the portion of the current that is under the sensor 104 flows.

7th FIG. 10 shows a top-down plan view of a seventh embodiment of the semiconductor package 7th The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast to this, however, is the magnetic field sensor 104 on one line 100-3 the assembly arranged by the line 100-1 is different at which the semiconductor chip 102 is appropriate. The administration 100-3 on which the magnetic field sensor 104 is arranged, establishes an electrical connection with the semiconductor chip 102 by one or more electrical conductors 134 such as wire bonds, wire ribbons, etc., ready. One or more of these electrical conductors 134 are between the semiconductor chip 102 and the magnetic field sensor 104 inserted. The magnetic field sensor 104 works to sense the magnetic field produced by the current flowing in the current path that is through the line 100-3 on which the magnetic field sensor 104 is arranged, and each electrical conductor 134 who is with this lead 100-3 is connected and between the semiconductor chip 102 and the magnetic field sensor 104 is inserted, flows.

8th FIG. 10 shows a top-down plan view of an eighth embodiment of the semiconductor package 8th The embodiment shown is similar to that in FIG 7th embodiment shown. In contrast to this, however, is the electrical connection between the line 100-3 on which the magnetic field sensor 104 is arranged, and the semiconductor chip 102 by a metal clamp 106 provided in place of the wire bonds or ribbons. The magnetic field sensor 104 works to sense the magnetic field produced by the current running in the current path that runs through the line 100-3 on which the magnetic field sensor 104 is arranged, and the metal clamp 106 who have this line 100-3 with the semiconductor chip 102 connects, flows.

9A FIG. 11 shows a top-down plan view of a ninth embodiment of the semiconductor package, and FIG 9B FIG. 13 is a cross-sectional view of the assembly taken along the line marked BB 'in FIG 9A dar. The in 9A and 9B The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast to this, however, is the magnetic field sensor 104 under a metal clamp 106 arranged one of the lines 100-3 the assembly with the semiconductor chip 102 electrically connects. The magnetic field sensor 104 is in 9A shown as a dashed box because the sensor 104 in this view through the metal clamp 106 is covered. One or more of the lines 100 of the assembly extend under the metal clamp 106 to make electrical connections at the rear 103 of the magnetic field sensor 104 provide. Mechanical contact between the top 105 of the magnetic field sensor 104 and the metal clamp above 106 is not necessary because the sensor 104 through one or more of the underlying line (s) 100 the assembly is carried. The top 105 of the magnetic field sensor 104 can from the metal clamp above 106 be galvanically isolated, for example by an air gap 136 . Additionally or alternatively, a spacer (in 9B not shown) the magnetic field sensor 104 from the metal clamp 106 separate, such as in 1B shown. For example, the gap 136 be filled with a type of polymer such as casting compound, non-conductive adhesive or non-conductive film / tape. Alternatively, a conductive material can fill the gap 136 between the sensor 104 and the metal clamp above 106 fill in the case of low voltage devices. Different to 1B would be the spacer between the top 105 of the magnetic field sensor 104 and the metal clamp above 106 inserted.

10 FIG. 10 shows a top-down plan view of a tenth embodiment of the semiconductor package 10 The embodiment shown is similar to that in FIG 7th embodiment shown. In contrast to this, however, the magnetic field sensor 104 an opening 138 on, going through the sensor 104 extends. Various semiconductor technologies allow such an opening to be easily formed 138 e.g., masking and chemical etching processes, laser drilling processes, etc., and therefore no further explanation is provided in this regard. At least one electrical conductor 134-1 is on the line 100-3 on which the magnetic field sensor 104 is arranged through the opening 138 in the sensor 104 appropriate. The other end of that line 134-1 is on the semiconductor chip 102 attached to complete the appropriate electrical connection. The magnetic field sensor 104 works to sense the magnetic field produced by current flowing in the current path that goes through the line 100-3 on which the magnetic field sensor 104 is arranged, and the electrical conductor 134-1 who is on this line 100-3 through the opening 138 in the magnetic field sensor 104 is attached, flows.

11A FIG. 11 illustrates a top-down plan view of an eleventh embodiment of the semiconductor package, and FIG 11B FIG. 13 shows a cross-sectional view of the assembly along the line marked CC 'in FIG 11A dar. The in 11A and 11B The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast to this, however, is the magnetic field sensor 104 in the same chip 102 like the power semiconductor device (s) 140 embedded. The chip 102 contains a semiconductor body 140 comprising Si or a compound semiconductor such as SiC, GaAs, GaN, etc. The performance device (s) 138 are in the semiconductor body 140 educated. The magnetic field sensor 104 is in the same semiconductor body 140 like the power device (s) 138 arranged but by the power device (s) 138 galvanically isolated. The galvanic isolation can be in the semiconductor body 140 or as part of a bond line with the underlying line 100-1 be integrated into the assembly. In either case, the current flow path into the power device (s) 138 and from the power device (s) 138 to a PCB, a ceramic substrate, etc. (not shown) in FIG 11B represented by a series of arrows. As in 11B shown, some current is spreading under the magnetic field sensor 104 on the line 100-1 from where the chip 102 is appropriate. The magnetic field that is produced by the electricity flowing in that part of the line 100-1 flows through the integrated magnetic field sensor 104 felt. The level of the corresponding signal that is sent by the sensor 104 produced is proportional to the amount of current that flows in this part of the current path. The metal clamp 106 , in the 11A shown may be replaced by a different type of electrical conductor such as wire bonds, wire ribbons, etc.

12th FIG. 10 shows a top-down plan view of a twelfth embodiment of the semiconductor package 12th The embodiment shown is similar to that in FIG 7th embodiment shown. The difference is the magnetic field sensor 104 but on a third line 100-10 arranged. A first group 144 consisting of one or more electrical conductors such as wire bonds, wire bands, etc., each has a first end that is connected to a second line 100-3 attached, and a second end that attaches to the third conduit 100-10 is appropriate on. A second group 146 One or more electrical conductors such as wire bonds, wire bands, etc. each have a first end that is connected to the third line 100-10 attached, and a second end attached to the semiconductor chip 102 is attached to a first line 100-1 is appropriate on. The magnetic field sensor 104 is between the first group 144 and the second group 146 inserted from one or more electrical conductors and senses the magnetic field that is produced by the current that comes from the first group 144 from one or more electrical conductors to the second group 146 from one or more electrical conductors through the third line 100-10 flows.

13A FIG. 13 illustrates a top-down plan view of a thirteenth embodiment of the semiconductor package, and FIG 13B FIG. 13 is a cross-sectional view of the assembly taken along the line marked DD 'in FIG 13A dar. The in 13A and 13B The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast to this, however, is the magnetic field sensor 104 on the semiconductor chip 102 instead of the metal clamp 106 that the corresponding line 100-3 the assembly with the semiconductor chip 102 electrically connects, arranged. The magnetic field sensor 104 is from the semiconductor chip 102 galvanically isolated. In one embodiment, a spacer separates 108 the magnetic field sensor 104 from the semiconductor chip 102 . The spacer 108 can do both galvanic isolation and magnetic field reduction on the sensor 104 as described herein above.

The embodiments described above position the magnetic field sensor in such a way that the magnetic field strength of interest is measured in only one direction. With such a sensor configuration, additional signal processing must be carried out in order to suppress the influence of magnetic stray fields such as the earth's magnetic field on the measurement results. Accordingly, current measurement information derived from the sensor output may include contributions due to stray magnetic fields impinging on the magnetic field sensor, making the current measurement information less accurate if it is not further processed to cancel these contributions. The embodiments described below use a differential measurement method, the magnetic field sensor comprising at least two magnetic field sensor components that are positioned so that the magnetic field of interest hits the magnetic field sensor components in different directions, which makes it easier to determine the influence of the magnetic stray field such as the earth's magnetic field on the measurement results to suppress.

The level of the signal that is generated by each magnetic field sensor component is proportional to the amount of current that flows in the current path and indicates the current consumption of the semiconductor chip and / or the temperature of the assembly. For example, in the case of a Hall sensor, at least two transducers can be positioned so that the magnetic field of interest (vertically) hits the transducers in different vertical directions. Each transducer varies its output voltage in response to the magnetic field. In the case of magnetoresistive sensor components (XMR sensor components) such as anisotropic magnetoresistive sensor components (AMR sensor components), giant magnetoresistive sensor components (GMR sensor components) or tunnel magnetoresistive sensor components (TMR sensor components, the electrical resistance of a metal or semi-conductor) changes / contained in the XMR magnetic field sensor components, under the influence of the magnetic field that hits the XMR sensor components (laterally) in different lateral directions.

The orientation and configuration of the magnetic field sensor components can vary according to the type of magnetic field sensor used. For example, the magnetic field sensor components can be one-dimensional XMR or Hall devices, measuring only magnetic field strength, or can be three-dimensional devices that also output an electrical signal that is proportional to a distance between the current path and the three-dimensional magnetic field sensing component. In any case, the level of the signal generated by each magnetic field sensor component is proportional to the amount of current flowing in the current path of the semiconductor chip. However, the magnetic field sensor components are positioned so that the magnetic field of interest hits the magnetic field sensor components in different directions, which enables the influence of stray magnetic fields such as the earth's field to be suppressed, e.g. by using the difference in the electrical signal outputs of the sensor component. In this way, the current flow through the semiconductor chip and the temperature within the assembly can be measured more precisely.

14A FIG. 11 shows a top-down plan view of a fourteenth embodiment of the semiconductor package, and FIG 14B FIG. 13 is a cross-sectional view of the assembly taken along the line labeled EE 'in FIG 14A dar. The in 14A and 14B The embodiment shown is similar to that in FIGS 1A and 1B embodiment shown. In contrast, however, includes the magnetic field sensor 104 a first magnetic field sensing component 104a and a second magnetic field sensing component 104b . The second magnetic field sensing component 104b is through the metal clamp 106 covered and therefore in 14A not to see.

The first magnetic field sensing component 104a is adjacent to the top of the metal clip 106 and galvanically isolated from the current path. The second magnetic field sensing component 104b is adjacent to the bottom of the metal clip 106 and also galvanically isolated from the current path. The first and second magnetic field sensing components 104a , 104b of the magnetic field sensor 104 are arranged according to this embodiment in separate semiconductor chips because the sensor components 104a , 104b adjacent opposite sides of the same metal clip 106 are. In one embodiment, a spacer separates 108a , 108b any magnetic field sensor component 104a , 104b from the metal clamp 106 . The spacer 108 can provide both galvanic isolation and magnetic field reduction on each sensor component 104a , 104b as described herein above. The metal clamp 106 connects a line 100-3 the semiconductor assembly with a connection (eg emitter or source connection) of the semiconductor chip 102 .

With the in 14A and 14B The sensor component configuration shown is the first magnetic field sensing component 104a positioned so that the magnetic field produced by current flowing through the current path is applied to the first magnetic field sensing component 104a hits in a first direction. The second magnetic field sensing component 104b is positioned so that the magnetic field is incident on the second magnetic field sensing component 104b in a second direction that is different from the first direction. The rung is in 14B represented by arrows.

Electricity enters the line 100-3 one, passes through the metal clamp 106 from right to left, enters the semiconductor chip 102 enters and exits the assembly by conduction 100-1 out. 14B represents a few vectors of the resulting magnetic field that is in the plane of the drawing above the metal clamp 106 enters, represented by the symbol ⊗ and a few vectors of the magnetic field that emerges from the plane of the drawing below the metal clamp 106 exits, through the symbol 0 Thus, in this embodiment, the magnetic field of interest, ie the magnetic field produced by the current flowing in the current path, hits the first and second magnetic field sensing components in opposite directions 104a , 104b .

The magnetic field sensor 104 produces an electrical signal proportional to the sensed magnetic field. The electrical signal includes a first signal component generated by the first magnetic field sensing component 104a and a second signal component output by the second magnetic field sensing component. The difference in electrical signals produced by the magnetic field sensing components 104a , 104b output, suppresses (in this case cancels out) the influence of stray magnetic fields because all the stray magnetic fields that affect the magnetic field sensing components 104a , 104b the one in the same direction as that in the 14A and 14B sensor component configuration shown. The magnetic field of interest strikes the magnetic field sensing components 104a , 104b with the in the 14A and 14B sensor component configuration shown in opposite directions, and therefore the measured strength of the magnetic field of interest is constructively combined to give an accurate estimate of the current flowing in the current path without being influenced by stray magnetic fields.

15A represents vectors of a magnetic field produced by current passing through a metal clamp 200 that flows a first section 202 and a second section 204 which are spaced from one another and extend parallel to one another as part of the current path. A third section 206 extends perpendicularly between the first and second sections 202 , 204 and connects the first section 202 with the second section 204 . The ends 208 , 210 of the first and second sections 202 , 204 are not physically connected to each other. Electricity running in the metal clamp 200 flows, comes to an end 208 one and enters at the other end 210 out. The current flows in the opposite direction in the first section 202 compared to the second section 204 . As a result, the magnetic field produced by the current flowing in the metal clamp spreads 200 flows outward from the first section 202 in the opposite direction compared to the second section 204 out.

15B Figure 10 is a sectional view of the metal clip 200 , in the 15A is shown along the line labeled AA. Current flows in one direction in the first section 202 the metal clamp 200 , as indicated by symbol ⊗ in 15B is represented and flows in the opposite direction in the second section 204 the metal clamp 200 , as indicated by symbol 0 in 15B is represented. In 15B a stray magnetic field is also shown which is applied to each section 202 , 204 the metal clamp 200 hits in the same direction. 15B also shows a first vector 212 , 212 ' representing the magnetic field of interest, a second vector 214 , 214 ' representing the stray magnetic field and a third vector 216 , 216 ' representing the combination of the first and second vectors measured for the first and second sections 202 , 204 the metal clamp 200 . The influence of the magnetic stray field on the sensing result is in 15B clearly visible. The influence of the stray magnetic field can be reduced by inserting a Differential measurement method can be suppressed, wherein a first magnetic field sensing component 104a in close proximity to the first section 202 the metal clamp 200 and a second magnetic field sensing component 104b in close proximity to the second section 204 the metal clamp 200 is placed. By using the difference in the outputs of the sensor components (X1-X2), the influence of the homogeneous stray magnetic field is eliminated, as in the lower part of FIG 15B is specified.

16A FIG. 11 shows a top-down plan view of a fifteenth embodiment of the semiconductor package, and FIG 16B FIG. 10 is an exploded view of the area contained in the dashed box shown in FIG 16A is shown. In the 16A and 16B The embodiment shown is similar to that in FIGS 14A and 14B embodiment shown. In contrast, however, the first and second magnetic field sensing components are different 104a , 104b of the magnetic field sensor 104 in the same sensor chip 300 integrated and therefore fixed in the same plane. The sensor chip 300 is on different lines / metal clamps 100-3 , 100-4 / 106 attached to the semiconductor assembly. The first wire / metal clamp 100-3 is to a first connection (eg collector or drain) of the semiconductor chip 102 electrically connected, and the second metal terminal 100-3 is connected to a second connection (eg emitter or source) of the second semiconductor chip 102 electrically connected. Current flowing in the current path traverses a different direction along the first line / metal clip 100-4 / 106 than along the second line / metal clamp 100-3 . The first magnetic field sensing component 104a is adjacent to the first wire / metal clamp 100-4 / 106 , and the second magnetic field sensing component 104b is adjacent to the second wire / metal clip 100-3 . Electricity going into the semiconductor chip 102 enters, passes through the first line / metal clamp 100-4 / 106 in a first direction. Electricity coming from the semiconductor chip 102 exits, passes through the second line / metal clamp 100-3 in the opposite direction. As a result, the magnetic field produced by current flowing in the current path meets the first magnetic field sensing component 104a in the opposite direction as on the magnetic field sensing component 104a .

17th FIG. 10 shows a top-down plan view of a sixteenth embodiment of the semiconductor package 17th The embodiment shown is similar to that in FIGS 16A and 16B embodiment shown. In contrast, the sensor chip is responsible for the first and second magnetic field sensing components 104a , 104b contains, on the same wire / metal clamp 100-4 / 106 appropriate. The wire / metal clamp 100-4 / 106 is connected to a connection (e.g. emitter or source) of the semiconductor chip 102 electrically connected. The wire / metal clamp 100-4 / 106 includes a first section 400 and a second section 402 spaced apart and extending parallel to one another as part of the current path. A third section 404 the wire / metal clamp 100-4 / 106 extends perpendicularly between the first and second sections 400 , 402 and connects the first section 400 with the second section 402 . The ends of the first and second sections 400 , 402 are not physically connected to each other. Current flowing in the current path traverses a different direction along the first section 400 the wire / metal clamp 100-4 / 106 than along the second section 402 the wire / metal clamp 100-4 / 106 such as hereinbefore in connection with 15A and 15B described. The first magnetic field sensing component 104a is adjacent to the first section 400 the wire / metal clamp 100-4 / 106 , and the second magnetic field sensing component 104b is adjacent to the second section 402 the wire / metal clamp 100-4 / 106 . In this way, electricity hits the wire / metal clamp 100-4 / 106 flows onto the first magnetic field sensing component 104a in the opposite direction as on the second magnetic field sensing component 104b so that stray field contributions are canceled out by the difference sensing method described here.

In one embodiment, the first section extends 400 the wire / metal clamp 100-4 / 106 across the base of the semiconductor chip 102 addition, and the first magnetic field sensing component 104a is adjacent to the first section 400 outside the base area of the semiconductor chip 102 . The second magnetic field sensing component 104b is adjacent to the second section 402 within the base of the semiconductor chip 102 .

18th FIG. 10 shows a top-down plan view of a seventeenth embodiment of the semiconductor package 18th The embodiment shown is similar to that in FIG 17th embodiment shown. In contrast, however, the second section extends 402 the wire / metal clamp 100-4 / 106 also over the base area of the semiconductor chip 102 out. In this way, both are magnetic field sensing components 104a , 104b adjacent to the respective section 400 , 402 the wire / metal clamp 100-4 / 106 outside the base area of the semiconductor chip 102 . With this configuration, there are disturbances in the current flowing in the semiconductor chip 102 flows, has less effect on the magnetic field generated by the magnetic field sensing components 104a , 104b of the magnetic field sensor 104 is sensed because the magnetic field sensing components 104a , 104b not above or below the semiconductor chip 102 , instead it is laterally offset from the chip 102 are positioned in the vertical direction.

In one embodiment, the semiconductor chip contains 102 a power transistor that is controlled by a switching signal sent to the gate 116 of the power transistor is applied. The switching signal controls the switching of the power transistor, during which disturbances occur in the current flowing through the power transistor. A difference signal that is the difference between the electrical signals generated by the magnetic field sensing components 104a , 104b of the magnetic field sensor 104 can be processed to suppress the effect of the disturbances on the measured magnetic field based on timing information associated with the switching signal. For example, the switching signal can be a PWM signal (pulse width modulation signal) that is sent to the gate 116 of the power transistor is applied. In this example, the timing information corresponds to the duty cycle and / or the frequency of the PWM signal. A control unit (not shown) that provides the PWM signal knows the duty cycle and the frequency of the PWM signal. The control unit thus knows when the power transistor is switched on, when it is switched off and how long the power transistor remains switched on or off. Based on this timing information, the control unit knows when disturbances occur in the current flowing through the power transistor and can process the difference signal in order to determine the influence of these disturbances on the measurement results obtained by the sensor components 104a , 104b are produced, to remove or at least to reduce, for example by ignoring, filtering etc. the difference signal during known disturbance time periods.

19A FIG. 13 illustrates a perspective view of an eighteenth embodiment of the semiconductor package, and FIG 19B FIG. 10 shows a plan view in more detail of the FIG 19A assembly shown. The in 19A and 19B The embodiment shown is similar to that in FIGS 16A and 16B embodiment shown. The difference is the magnetic field sensor 104 but attached to the outside of the assembly on the live connections to sense the magnetic field. The semiconductor assembly can be, for example, an assembly with transistor dimensions (TO assembly) or another type of standard semiconductor assembly that has a first line 3 connected to a first connection (eg emitter or source) of the semiconductor chip 102 is electrically connected, a second line 2 connected to a second connection (e.g. collector or drain) of the semiconductor chip 102 is electrically connected, a third line 1 connected to a third connection (e.g. gate) of the semiconductor chip 102 is electrically connected, and an encapsulation 500 who have favourited the semiconductor chip 102 encased, having. The lines 1 , 2 , 3 stand out from the encapsulation 500 emerged. The first and second magnetic field sensing components 104a , 104b of the magnetic field sensor 104 are in the same sensor chip 502 integrated, and the sensor chip 502 is on the same side of at least two of the wires 1 , 2 , 3 outside of encapsulation 500 appropriate. The first magnetic field sensing component 104a extends along the first conduit 3 , and the second magnetic field sensing component 104b extends along the second conduit 2 . Current flowing through the current path traverses a different direction along the first line 3 (e.g. emitter or source line) than along the second line 2 (e.g. collector or drain line). In the in the 19A and 19B As shown in the configuration shown, the current flows in the opposite direction along the first and second lines 3 , 2 . This is how the magnetic field that is produced by the electricity that enters the semiconductor chip hits 102 along the first line 3 and from the semiconductor chip 102 along the second line 2 flows onto the first magnetic field sensing component 104a in the opposite direction as on the second magnetic field sensing component 104b .

The semiconductor assembly can also have an additional substrate 504 included that on the lines 1 , 2 , 3 outside of encapsulation 500 is attached, with the additional substrate on the opposite side of the leads 1 , 2 , 3 like the sensor chip 502 is appropriate. Connections of the sensor chip 502 are with the lines 506 , 508 , 510 , 512 of the additional substrate 504 electrically connected to points of external electrical contact for accessing the electrical signals generated by the magnetic field sensing components 104 , 104b of the magnetic field sensor 104 that is in the sensor chip 502 is included, to be issued.

20th FIG. 3 illustrates a sectional view of a nineteenth embodiment of the semiconductor package 20th The embodiment shown is similar to that in FIGS 19A and 19B embodiment shown. However, the type of assembly is different. According to the in 20th In the embodiment shown, the semiconductor package is a surface mount package. The emitter / source line 100-4 the semiconductor assembly stands out from the encapsulation 500 on the opposite side of the assembly as the collector / drain line 100-3 emerged. Current flowing in the current path traverses a different direction along the emitter / source line 100-4 than along the collector / drain line 100-3 . The magnetic field sensing components 104a , 104b of the magnetic field sensor 104 are in separate sensor chips 600 , 602 arranged. the Sensor chip 600 with the first magnetic field sensing component 104a is on the emitter / source line 100-4 attached, and the sensor chip 602 with the second magnetic field sensing component 104b is on the collector / drain line 100-3 appropriate.

The semiconductor assembly can also have an additional substrate 604 contained that by encapsulation 606 is sheathed. The same or a different encapsulation can be used to encapsulate the semiconductor chip 102 and the additional substrate 604 to sheath. Connections of the separated sensor chips 600 , 602 are with leads of the additional substrate 604 by electrical conductors 608 such as wire bonds, wire ribbons, etc. electrically connected to points of external electrical contact to access the electrical signals generated by the magnetic field sensing components 104a , 104b of the magnetic field sensor 104 are issued.

The in connection with the 14A until 20th Embodiments described enable current sensing in a semiconductor package that includes a semiconductor chip attached to a substrate, and a magnetic field sensor that is included as part of the same semiconductor package as the semiconductor chip and is positioned in close proximity to a current path of the semiconductor chip. The current sensing method includes producing a first electrical signal by a first magnetic field sensing component that is galvanically isolated from the current path and positioned such that a magnetic field produced by a current flowing in the current path is applied to the first magnetic field sensing component hits in a first direction, the electrical signal being proportional to the magnetic field. The current sensing method also includes producing a second electrical signal by a second magnetic field sensing component that is galvanically isolated from the current path and is positioned such that the magnetic field impinges on the second magnetic field sensing component in a direction other than the first, the second being electrical Signal is proportional to the magnetic field. The current sensing method further includes producing a third electrical signal as the difference between the first electrical signal and the second electrical signal.

The first and second magnetic field sensing components may be positioned such that the magnetic field hits the first magnetic field sensing component in the opposite direction as the second magnetic field sensing component, as described hereinabove. In this way, the strength of the magnetic field sensed by the first magnetic field sensing component is constructively combined with the strength of the magnetic field sensed by the second magnetic field sensing component, and any measurements of stray magnetic fields obtained by the first and the second magnetic field sensing components are canceled from the third electrical signal produced by the current sensing process.

In some cases, the semiconductor chip may contain one or more power transistors that are controlled by a switching signal that activates the switching of the power transistor (s), during which disturbances occur in the current flowing through the power transistor (s), controls. For these cases, the current sensing method may further include processing the third electrical signal to suppress the effect of the disturbances on the magnetic field based on timing information associated with the switching signal. For example, the switching signal can be a PWM signal (pulse width modulation signal), and the timing information corresponds to a relative switch-on duration and / or a frequency of the PWM signal. Based on this information, a control unit that generates the PWM signal knows when disturbances occur in the current flowing through the power transistor (s) and can process the third electrical signal in order to determine the influence of this disturbance on the measurement results, that are produced by the magnetic field sensing components, or at least reduce, e.g., by ignoring, filtering, etc., the third electrical signal during known disturbance periods of time, as described hereinabove.

The above in connection with the 1-20 The embodiments described provide the integration of the magnetic field sensor such as a magnetoresistive sensor (XMR sensor) or Hall sensor in a semiconductor assembly. The next in connection with the 21-37 The described embodiments belong to an independent multifunctional connection module that contains a magnetic field sensor such as an XMR sensor or a Hall sensor for current and / or temperature measurement. The magnetic field sensor functions as described hereinbefore and generates a signal in response to a magnetic field produced by current flowing in a current path of a metal clip contained in the self-contained multifunctional interconnect module. The self-contained multifunctional interconnect module may or may not include one or more magnetic field sensing components and may or may not be provided with galvanic isolation between the magnetic field sensor and the metal clip, as described hereinabove.

The stand-alone multifunctional connection module can be used to establish a direct electrical connection between components and / or to form metal areas of a support structure. As used herein, the term “carrier” generally refers to any type of substrate, structure, or package to which one or more semiconductor dies and / or semiconductor die assemblies are attached to or contained. For example, the term “carrier” can refer to a circuit board such as a PCB, a ceramic substrate, a plastic module, a cast module, a lead frame, or any other type of carrier. In one case, a semiconductor die or a semiconductor chip assembly such as a cast semiconductor chip can be attached to a carrier such as a PCB, and the multifunctional connection module can be used to establish an electrical connection between the bare chip / the chip assembly and a metal area of the carrier, between the bare chip / the chip assembly and another bare chip / chip assembly that is attached to the carrier, or between two different metal areas of the carrier, for example in a shunt configuration.

21 until 23 represent respective sectional views of three different embodiments of an independent multifunctional connection module 700 according to the in 21 The embodiment shown comprises the multifunctional connection module 700 a metal clamp 702 having a first end portion 704 , a second end portion 706 and a central section 708 extending between the first and second end portions 704 , 706 extends, includes. The metal clamp 702 can be of a single, continuous construction so that no physical boundaries or seams between the end sections 704 , 706 and the middle section 708 the metal clamp 702 available. The first end section 704 the metal clamp 702 is for external attachment to a semiconductor die or a semiconductor chip assembly which is attached to such a carrier or to a metal region of the carrier (in 21 not shown) configured. The second end section 706 the metal clamp 702 is similar to external attachment to another metal area of the carrier or to another semiconductor chip or semiconductor chip assembly that is attached to the carrier (also in 21 not shown) configured.

The multifunctional connection module 700 further comprises a magnetic field sensor 104 holding on to the metal clamp 702 is attached. The magnetic field sensor 104 is at the middle section 708 the metal clamp 702 at the top main surface in the 21 until 23 attached. In general, the magnetic field sensor 104 at any section 704 , 706 , 708 the metal clamp 702 either on the upper or lower major surface of the clamp 702 may be attached, for example as described hereinabove, and may be on the metal clip 702 be centered or even on the clamp 702 survive. The magnetic field sensor 104 works to sense a magnetic field produced by current passing through the metal clamp 702 flows as described hereinabove. For example, the magnetic field sensor 104 an XMR sensor, such as an anisotropic magnetoresistive sensor (AMR sensor), a giant magnetoresistive sensor (GMR sensor) or a tunnel magnetoresistive sensor (TMR sensor), or a Hall sensor that generates a signal in response to the Magnetic field produced by the current flowing in a current path of the metal clamp 702 flows.

The magnetic field sensor 104 can on the metal clamp 702 by an electrically conductive or non-conductive material or by a spacer 710 be attached. In some applications the magnetic field sensor 104 be supplied with a significantly lower voltage or carry signals at a significantly lower voltage (e.g. 5 V) compared to the semiconductor chip, which causes current to flow through the terminal 702 flows (e.g. 500 V, 1000 V or even higher). The magnetic field sensor 104 from the metal clamp 702 be galvanically isolated. In one embodiment, the magnetic field sensor is 104 from the metal clamp through a spacer 710 spaced. The spacer 710 can be electrically conductive or electrically insulating. For example, the spacer 710 a conductive adhesive, sintered material, solder, etc. for use in the low to medium voltage range (e.g. up to 500 V). In another example, the material of the spacer 710 be chosen to provide galvanic isolation. A conductive adhesive can be used in the case when the terminal voltage and the microcontroller for the sensor 104 show no voltage difference or the voltage peaks on the terminal 702 are blocked by other components than the spacer 710 be used. Otherwise, the spacer 710 Provide galvanic isolation, e.g. with non-conductive adhesive. The thickness of the adhesive affects the response of the magnetic field sensor 104 and the level of galvanic isolation. The material and dimensions of the spacer can be selected to optimize the smallest detected current, largest detected current, and level of galvanic isolation.

The thickness of the spacer 710 can be chosen so that the strength of the magnetic field that enters the magnetic field sensor 104 occurs, is reduced to a non-destructive level. A relatively thick spacer is particularly advantageous for high current applications. In one embodiment, the spacer is 710 a semiconductor chip such as a silicon chip placed between the magnetic field sensor 104 and the metal clamp 702 is inserted. In other embodiments, the spacer 710 a polymer, ceramic, non-conductive adhesive, non-conductive film or any other single or multi-layer material that the magnetic field sensor 104 from the metal clamp 702 separates. Alternatively, the magnetic field sensor 104 directly on the metal clamp 702 be attached, e.g. by soldering, if the sensor 104 has a solderable back, or by an electrically non-conductive adhesive.

For each of these configurations is the multifunctional connection module 700 an independent component. That is, the multifunctional connection module 700 does not contain the component that causes current to flow through the metal clamp 702 of the connection module 700 flows, ie the component, its current and / or temperature through the connection module 700 should be measured.

22nd shows a second embodiment of the multifunctional connection module 700 in which the metal clamp 702 in an encapsulation 712 is embedded. Any standard encapsulation material can be used, such as an adhesive, a molding compound, a laminate such as FR-4 or FR-5, a photoresist such as a solder mask material, glass, silicon, etc. In 22nd covers the encapsulation 712 the surface 703 the metal clamp 702 at which the magnetic field sensor 104 is attached. The magnetic field sensor 104 can also be in the encapsulation 712 be embedded, as in 22nd is shown. Electrical contact points 714 that are on the side of the magnetic field sensor 104 held by the metal clamp 702 shows away, are arranged, have an exposed surface 705 on that are not due to the encapsulation 712 is covered for subsequent electrical connection to the sensor 104 to enable.

23 shows a third embodiment of the multifunctional connection module 700 in which the surface 707 of the middle section 708 the metal clamp 702 by the magnetic field sensor 104 points away, also through the encapsulation 712 is covered. The first and second end sections 704 , 706 the metal clamp 702 each have an exposed surface 709 on that from the magnetic field sensor 104 points away and not from encapsulation 712 is covered in order to later attach to a semiconductor die or a semiconductor chip assembly that is attached to a carrier or to a metal area of the carrier (in 23 not shown) is mounted.

24 represents a top view of the in 21 shown embodiment of the multifunctional connection module, and 25th represents a top view of the in 22nd and 23 shown embodiments of the multifunctional connection module.

the 26th and 27 illustrate respective top views of embodiments of the multifunctional connection module shown in FIG 22nd and 23 are shown, the magnetic field sensor 104 works to address the above in connection with the 14-19 to implement the difference sensing method described. According to these embodiments, the magnetic field sensor comprises 104 a first magnetic field sensing component 104a and a second magnetic field sensing component 104b . Also includes the middle section 708 the metal clamp 702 a first branch 716 and a second branch 718 that of the first branch 716 is spaced. In the in 26th The embodiment shown are the first and the second branch line 716 , 718 at either end of the clamp 702 connected. In the in 27 The embodiment shown are the first and the second branch line 716 , 718 at one end 704 connected to the terminal. The first magnetic field sensing component 104a of the magnetic field sensor 104 is adjacent to the first branch 716 and positioned so that a magnetic field that is produced by electricity generated in the first branch 716 flows onto the first magnetic field sensing component 104a hits in a first direction. The second magnetic field sensing component 104b of the magnetic field sensor 104 is adjacent to the second branch 718 and positioned so that the magnetic field is incident on the second magnetic field sensing component 104b meets in a second direction that is different from the first direction.

In the in the 26th and 27 In the configurations shown, the first and second directions are opposite to each other. The electrical signal produced by the magnetic field sensor 104 is produced includes a first signal component generated by the first magnetic field sensing component 104a is output, and a second signal component generated by the second magnetic field sensing component 104b is issued. In this way, electricity hits the metal clamp 702 flows onto the first magnetic field sensing component 104a in the opposite direction as the second magnetic field sensing component 104b so that stray field contributions are canceled out by differential sensing, as described hereinbefore. The one in the 26-27 shown magnetic field sensor 104 can through the appropriate encapsulation 712 of the multifunctional connection module 700 be covered, as in the 22nd and 23 but is not shown in this manner in the 26-27 shown so that the position of the magnetic field sensing components 104a , 104b relative to the line branches 716 , 718 the metal clamp 702 are visible.

the 28-37 illustrate different embodiments for using one or more instances of the multifunctional connection module 700 represent to a direct electrical connection to form between components and / or metal areas of the support structure.

28 Figure 10 shows a top view of a first embodiment of a support structure 800 represent the multiple instances of the multifunctional connection module 700 used. According to this embodiment, the support structure comprises 800 a carrier 802 such as a printed circuit board, a ceramic substrate, a plastic module, a cast module, a lead frame, etc., which has multiple metal areas 804 has, which in an electrically insulating material 806 such as a laminate such as FR-4 or FR-5, a molding compound, a ceramic substrate, etc., are embedded or attached thereto. Semiconductor bare chips and / or semiconductor chip assemblies 808 are on different metal areas 804 of the wearer 802 appropriate. Several multifunctional connection modules 700 form direct electrical connections between the semiconductor dies / semiconductor chip assemblies 808 and / or metal areas 804 of the wearer 802 . Any connection module 700 includes a metal clamp 702 having a first end portion 704 , a second end portion 706 and a central section 708 extending between the first and second end portions 704 , 706 extends, has. The first end section 704 is on one of the semiconductor dies / semiconductor chip assemblies 808 attached to the carrier 802 are mounted. The second end section 706 is on one of the carrier metal areas 804 appropriate. In this way, each multifunctional connection module represents 700 a direct electrical connection between one of the semiconductor dies / semiconductor chip assemblies 808 and one of the metal areas 804 of the wearer 802 ready. These connections are in 28 not visible.

Any connection module 700 also includes a magnetic field sensor 104 on the respective metal clamp 702 is attached, as here above in connection with the 21-23 described. The metal clips 702 of the respective connection modules 700 can in an encapsulation 712 be embedded, also as above here in connection with the 22nd and 23 described. One or more of the semiconductor dies / semiconductor chip assemblies 808 attached to the carrier 802 attached, can be supplied or signals carry a significantly higher voltage (e.g. 500 V, 1000 V or even higher) than the neighboring magnetic field sensor 104 (e.g. 5 V). For these applications, galvanic isolation can be used between the magnetic field sensor 104 and the corresponding metal clamp 702 as described hereinabove.

29A Figure 3 shows a plan view of a second embodiment of the support structure 800 represents the version of the multifunctional connection module 700 used in 21 is shown, and 29B Figure 10 is a sectional view of the support structure 800 along the line marked FF 'in 29A represents. According to this embodiment, connect a plurality of electrical conductors 810 such as wire bonds, wire bands, etc. different from the metal areas 804 of the wearer 802 with electrical contact points 714 on one side of the magnetic field sensor 104 of the multifunctional connection module 700 held by the metal clamp 702 of this module 700 points away, are arranged. These connections allow signals from the magnetic field sensor 104 to the carrier 802 be guided. A spacer bolt 812 such as a metal block can be used to fill any gap between the second end portion 706 the metal clamp 702 and the wearer 802 resulting from attaching the first end section 704 on one of the semiconductor bare chips / semiconductor chip assemblies 808 result to adapt. Alternatively, the gap can be created by producing the second end section 706 the metal clamp 702 thicker (higher) than the first end portion 704 be adjusted.

29C Figure 3 shows the same sectional view of the support structure 800 along the line marked FF 'in 29A dar, but with the in 22nd version of the multifunctional connection module shown 700 .

29D also shows the same sectional view of the support structure 800 along the line marked FF 'in 29A dar, but with the in 23 version of the multifunctional connection module shown 700 .

30th Figure 10 shows a top view of a third embodiment of the support structure 800 represent the multifunctional connection module 700 used. In the 30th The embodiment shown is similar to that in FIG 29A embodiment shown. In contrast, however, comprises the connection module 700 also a metallic redistribution layer 720 that are in the same encapsulation 712 like the metal clamp 702 embedded and from the metal clamp 702 is separated. The metallic redistribution layer 720 can with contact points of the magnetic field sensor 104 that are on the front (which are not shown) and / or back (which are not visible) of the sensor 104 are arranged to be electrically connected. The top of the metal clamp 702 and the magnetic field sensor 104 can through encapsulation 712 be covered, as in the 22nd and 23 are shown in 30th however, not shown in this way, so the position of the magnetic field sensor 104 and the metal clamp 702 relative to the metallic redistribution layer 720 is visible. Multiple electrical conductors 810 such as wire bonds, wire bands, etc. connect different of the metal areas 804 of the wearer 802 with the metallic redistribution layer 720 of the connection module 700 .

31 Figure 3 shows a plan view of a fourth embodiment of the support structure 800 represent the multifunctional connection module 700 used. In the 31 The embodiment shown is similar to that in FIG 30th embodiment shown. In contrast, however, comprises the connection module 700 also a logic device 722 attached to the metal clamp 702 is attached and works to the magnetic field sensor 104 to control. The metal clamp 702 , the magnetic field sensor 104 and the logic device 722 can through encapsulation 712 be covered, but are in 31 not shown in this way, so the position of the magnetic field sensor 104 , the metal clamp 702 and the logic device 722 relative to the metallic redistribution layer 720 is visible. Multiple electrical conductors 810 such as wire bonds, wire bands, etc. connect different metal areas 804 of the wearer 802 with the metallic redistribution layer 720 of the connection module 700 , and other electrical conductors 814 can for direct electrical connection of the logic device 722 and / or the magnetic field sensor 104 with metal areas 804 of the wearer 802 and / or the metallic redistribution layer 720 be provided.

32 Figure 3 shows a plan view of a fifth embodiment of the support structure 800 represent the multifunctional connection module 700 used. In the 32 The embodiment shown is similar to that in FIG 31 embodiment shown. In contrast, however, comprises the connection module 700 also one or more passive devices 724 such as capacitors, resistors, etc. attached to the metallic redistribution layer 720 of the multifunctional connection module 700 are attached. The metal clamp 702 , the magnetic field sensor 104 , the logic device 722 and the passive devices 724 can through encapsulation 712 be covered, but are in 32 not shown in this way, so the position of the magnetic field sensor 104 , the metal clamp 702 , the logic device 722 and passive devices 724 relative to the metallic redistribution layer 720 is visible.

33 Figure 3 shows a plan view of a sixth embodiment of the support structure 800 that the in 27 Shown version of the multifunctional connection module 700 used. According to this embodiment, the middle section comprises 708 the metal clamp 702 of the connection module 700 a first branch 716 and a second branch 718 that of the first branch 716 is spaced. The magnetic field sensor 104 comprises a first magnetic field sensing component 104a adjacent to the first branch 716 the metal clamp 702 and positioned so that a magnetic field that is produced by electricity generated in the first branch 716 flows onto the first magnetic field sensing component 104a in a first direction, and a second magnetic field sensing component 104b adjacent to the second branch 718 the metal clamp 702 and positioned so that the magnetic field is incident on the second magnetic field sensing component 104b hits in a second direction that is different from the first direction. The main flow that flows between the semiconductor die / semiconductor chip assembly 808 and the corresponding carrier metal area 804 is guided, flows through the metal clamp 702 of the multifunctional connection module 700 and changes direction along the length of the metal clip 702 so that stray field contributions by differential sensing that in the magnetic field sensor 104 implemented, as described hereinbefore.

34 Figure 3 shows a plan view of a seventh embodiment of the support structure 800 that the in 26th Shown version of the multifunctional connection module 700 used. According to this embodiment, the semiconductor die / semiconductor chip assembly is / are 808 a lateral transistor device with all power connections on one side leading to the connection module 700 shows. The middle section 708 the metal clamp 702 of the connection module 700 comprises a first branch line 716 and a second branch 718 that of the first branch 716 is spaced. The first branch of the line 716 the metal clamp 702 provides a direct electrical connection between the first power connection 816 on top of the semiconductor die (s) / die assembly 808 and a metal area 804 of the wearer 802 ready. The second branch of the line 718 the metal clamp 702 provides a direct electrical connection between the second power connection 818 on top of the semiconductor die (s) / die assembly 808 and another metal area 804 of the wearer 802 ready. The magnetic field sensor 104 comprises a first magnetic field sensing component 104a adjacent to the first branch 716 the metal clamp 702 and positioned so that a magnetic field that is produced by electricity generated in the first branch 716 flows onto the first magnetic field sensing component 104a in a first direction, and a second magnetic field sensing component 104b adjacent to the second branch 718 the metal clamp 702 and positioned so that the magnetic field is incident on the second magnetic field sensing component 104b meets in a second direction that is different from the first direction.

35 Figure 3 shows a plan view of an eighth embodiment of the support structure 800 that the in 26th Shown version of the multifunctional connection module 700 used. According to this embodiment, the semiconductor die / semiconductor chip assembly is / are 808 a vertical transistor device having a first power connection (not visible) on its underside and to a first metal region 804 of the wearer 802 attached, and a second power connection 818 on the side that leads to the connection module 700 shows. The middle section 708 the metal clamp 702 of the connection module 700 comprises a first branch line 716 and a second branch 718 that of the first branch 716 is spaced. The first branch of the line 716 the metal clamp 702 provides a direct electrical connection between the first metal area 804 of the wearer 702 and a second metal area 804 of the wearer 802 ready. The second branch of the line 718 the metal clamp 702 provides a direct electrical connection between the (second) power connection 818 on top of the semiconductor die (s) / die assembly 808 and a third metal area 804 of the wearer 802 ready. The magnetic field sensor 104 comprises a first magnetic field sensing component 104a adjacent to the first branch 716 the metal clamp 702 and positioned so that a magnetic field that is produced by electricity generated in the first branch 716 flows onto the first magnetic field sensing component 104a in a first direction, and a second magnetic field sensing component 104b adjacent to the second branch 718 the metal clamp 702 and positioned so that the magnetic field is incident on the second magnetic field sensing component 104b meets in a second direction that is different from the first direction.

36 Figure 3 shows a plan view of a ninth embodiment of the support structure 800 represent that in one of the 21-27 Shown version of the multifunctional connection module 700 used. Although the multifunctional connection module 700 with an encapsulation 712 shown is how in conjunction with the 22-23 and 25-27 shown can encapsulation 712 be omitted, as in connection with the 21 and 24 is shown. In each case there are at least two semiconductor dies / semiconductor chip assemblies 808 on the respective metal areas 804 of the wearer 802 appropriate. The first end section 704 the metal clamp 702 (in 36 not visible) of the connection module 700 is on a first one of the semiconductor dies / semiconductor chip assemblies 808 attached, and the second end portion 706 the metal clamp 702 (also in 36 not visible) is on a second one of the semiconductor bare chips / semiconductor chip assemblies 808 attached to a direct electrical connection between two semiconductor dies / semiconductor chip assemblies 808 via the connection module 700 provide.

37 Figure 3 shows a plan view of a tenth embodiment of the support structure 800 represent that in one of the 21-27 Shown version of the multifunctional connection module 700 used. Although the multifunctional connection module 700 again with an encapsulation 712 shown is how in conjunction with the 22-23 and 25-27 shown can encapsulation 712 be omitted, as in connection with the 21 and 24 is shown. In any case, the in 37 The carrier structure shown is similar to that in 36 embodiment shown. In contrast to this, however, is the first end section 704 the metal clamp 702 (in 36 not visible) of the connection module 700 on a first metal area 804 of the wearer 802 attached, and the second end portion 706 the metal clamp 702 (in 36 also not visible) is on a second metal area 804 of the wearer 802 attached to a direct electrical connection between the two metal areas 804 of the wearer 802 provide. In some cases the two metal areas 804 be grounded to provide a source connection with the corresponding semiconductor dies / semiconductor chip assemblies 808 over the respective carrier metal areas 804 provide. In these cases, the magnetic field sensor 104 of the multifunctional connection module 700 used to sense temperature and / or current.

As used herein, the terms “have”, “include”, “contain”, “comprise” and the like are open-ended terms that indicate the presence of named elements or features, but do not exclude additional elements or features. The articles “a / e / r” and “der / die / das” are intended to contain both the plural and the singular, unless the context clearly indicates otherwise.

It is to be understood that the features of the various embodiments described here can be combined with one another, unless specifically noted otherwise.

Claims (21)

A connector module comprising: a metal clip (702) including a first end portion (704), a second end portion (706), and a central portion (708) extending between the first and second end portions (704, 706) wherein the first end portion (704) is configured for external attachment to a semiconductor die or semiconductor chip assembly attached to a carrier or to a metal region of the carrier, the second end portion (706) for external attachment to another metal region of the carrier or is configured on another semiconductor chip or semiconductor chip assembly attached to the carrier; and a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) operating to sense a magnetic field produced by current flowing through the metal clip (702), the metal clip (702) is embedded in an encapsulation (712) and wherein electrical contact points (714) are arranged on a side of the magnetic field sensor (104) which faces away from the metal terminal (702), wherein the electrical contact points (714) are each designed for attaching a bonding wire and wherein a surface of the central portion (708) of the metal clip (702) facing away from the magnetic field sensor (104) is covered by the encapsulation (712). Connection module after Claim 1 , wherein the magnetic field sensor (104) is galvanically isolated from the metal clamp (702). Connection module after Claim 1 or 2 wherein the encapsulation (712) is an adhesive, a molding compound, or a laminate. The interconnection module of any preceding claim, further comprising: a metallic redistribution layer (720) embedded in the encapsulation (712) and separated from the metal clip (702). A connection module comprising: a metal clip (702) comprising a first end portion (704), a second end portion (706), and a central portion (708) extending between the first and second end portions (704, 706), the first end portion ( 704) is configured for external attachment to a semiconductor die or semiconductor chip assembly attached to a carrier or to a metal region of the carrier, the second end portion (706) for external attachment to another metal region of the carrier or to a / another semiconductor die or semiconductor die assembly attached to the carrier is configured; and a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) operating to sense a magnetic field produced by current flowing through the metal clip (702), wherein the central portion (708) of the metal clip (702) comprises a first branch line (716) and a second branch line (718) separate from the first branch line (716) and wherein the magnetic field sensor (104) has a first magnetic field sensing component (104a) adjacent to the first branch conduit (716) and positioned such that a magnetic field produced by current flowing in the first branch conduit (716) impinges on the first magnetic field sensing component (104a) in a first direction and a second magnetic field sensing component (104b) adjacent to the second branch line (718) and positioned such that the magnetic field impinges on the second magnetic field sensing component (104b) in a second direction that is different from the first direction, and wherein the branches (716, 718) of the central portion (708) of the metal clip (702) are coplanar. Connection module after Claim 5 wherein the magnetic field sensor (104) operates to produce an electrical signal proportional to the magnetic field, and wherein the electrical signal comprises a first signal component output by the first magnetic field sensing component (104a) and a second signal component which output by the first magnetic field sensing component (104a). The interconnection module of any preceding claim, further comprising: a logic device (722) attached to the metal clip (106) and operative to control the magnetic field sensor (104). Connection module according to one of the preceding claims, wherein the magnetic field sensor (104) is attached to the metal clamp (106) by a spacer (710). Connection module after Claim 8 wherein the spacer (710) is selected from the group consisting of: a polymer; a ceramic; Silicon; Glass; a non-conductive film; and a slide. Connection module after Claim 8 or 9 wherein the spacer (710) has a thickness such that the strength of the magnetic field entering the magnetic field sensor (104) is reduced to a non-destructive level. A carrier assembly comprising: a carrier (802) comprising a plurality of metal regions (804) embedded in or attached to an electrically insulating material (806); a first semiconductor die or die assembly (808) attached to a first one of the metal regions (804) of the carrier (802); and a first connection module (700) comprising: a metal clip (702) having a first end portion (704), a second end portion (706), and a central portion (708) extending between the first and second end portions (704 , 706), wherein the first end portion (704) on the first metal region (804) of the carrier (802) or on the / the first semiconductor die or Semiconductor chip assembly (808) is attached, the second end portion (706) is attached to a second metal region (804) of the carrier (802) or to a / a second semiconductor die or semiconductor chip assembly (808) which is attached to the carrier (802) is; and a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) operating to sense a magnetic field produced by current flowing through the metal clip (702), wherein electrical contact points (714 ) are arranged on one side of the magnetic field sensor (104) which faces away from the metal terminal (702) and wherein the electrical contact points (714) are each connected to a bonding wire. Carrier structure according to Claim 11 , wherein the magnetic field sensor (104) is galvanically isolated from the metal clamp (702). Carrier structure according to Claim 11 or 12th wherein the first connection module (700) further comprises a metallic redistribution layer (720) embedded in the encapsulation (712) and separated from the metal clip (702), and wherein the carrier structure further comprises: a plurality of electrical conductors (810), which connect different areas (804) of the carrier (802) to the metallic rewiring layer (720) of the first connection module (700). A support structure comprising: a carrier (802) comprising a plurality of metal regions (804) embedded in or attached to an electrically insulating material (806); a first semiconductor die or die assembly (808) attached to a first one of the metal regions (804) of the carrier (802); and a first interconnection module (700) comprising: a metal clip (702) comprising a first end portion (704), a second end portion (706) and a central portion (708) extending between the first and second end portions (704, 706), the first end portion ( 704) is attached to the first metal region (804) of the carrier (802) or to the / the first semiconductor bare chip or semiconductor chip assembly (808), the second end section (706) to a second metal region (804) of the carrier (802) or to a a second semiconductor die or die assembly (808) attached to the carrier (802); and a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) operating to sense a magnetic field produced by current flowing through the metal clip (702), wherein the middle section (708) of the metal clamp (702) of the first connection module (700) comprises a first line branch (716) and a second line branch (718) separate from the first line branch (716) and wherein the magnetic field sensor (104) of the first connection module ( 700) a first magnetic field sensing component (104a) adjacent the first branch line (716) and positioned such that a magnetic field produced by current flowing in the first branch line (716) is applied to the first magnetic field sensing component (104a) in a first direction, and a second magnetic field sensing component (104b) adjacent the second branch line (718) and positioned so that the magnetic field hits the second magnetic field sensing component (104b) in a second direction that is different from the first direction , meets, includes, and wherein the branches (716, 718) of the central portion (708) of the metal clip (702) are coplanar. Carrier structure according to Claim 14 wherein the first semiconductor die or the first semiconductor chip assembly (808) is a lateral transistor device, with all power connections on a side facing the first connection module (700), the first branch (716) of the first connection module (700) being a direct provides electrical connection between a first of the power connections and the second metal area (804) of the carrier (802) and wherein the second branch (718) of the first connection module (700) provides a direct electrical connection between a second of the power connections and a third of the Metal areas (804) of the carrier (802) provides. Carrier structure according to Claim 14 or 15th wherein the first semiconductor die or semiconductor chip assembly (808) is a vertical transistor device having a first power terminal attached to the first metal region (804) of the carrier (802) and a second power terminal on one side leading to the first interconnect module (700), wherein the first branch (716) of the first connection module (700) provides a direct electrical connection between the first and the second metal area (804) of the carrier (802) and wherein the second branch (718) of the first connection module ( 700) provides a direct electrical connection between the second power connection and a third one of the metal areas (804) of the carrier (802). Carrier structure according to one of the Claims 11 until 16 wherein the first end portion (704) of the metal clip (702) of the first connection module (700) is attached to the first semiconductor die or semiconductor chip assembly (808), and the second end portion (706) of the metal clip (702) of the first connection module (700) ) on the second semiconductor die or die assembly (808) is attached to provide a direct electrical connection between the first semiconductor die or die assembly (808) and the second semiconductor die or die assembly (808). Carrier structure according to one of the Claims 11 until 17th wherein the first end portion (704) of the metal clamp (702) of the first connection module (700) is attached to the first metal region (804) of the carrier (802) and the second end portion (706) of the metal clamp (702) of the first connection module (700) ) attached to the second metal region (804) of the carrier (802) to provide a direct electrical connection between the first and second metal regions (804) of the carrier (802). Carrier structure according to one of the Claims 11 until 18th wherein the magnetic field sensor (104) of the first connection module (700) is attached to the metal clamp (702) by a spacer (710). Carrier structure according to one of the Claims 11 until 19th wherein the first end portion (704) of the metal clip (702) of the first connection module (700) is attached to the first semiconductor die or semiconductor chip assembly (808), and the second end portion (706) of the metal clip (702) of the first connection module (700) ) attached to the second metal region (804) of the carrier (802) to provide a direct electrical connection between the first semiconductor chip or semiconductor chip assembly (808) and the second metal region (804) of the carrier (802), and wherein the carrier structure further comprising: a second connection module (700) comprising: a metal clip (702) having a first end portion (704), a second end portion (706), and a central portion (708) extending between the first and second End portion (704, 706) extends, wherein the first end portion (704) is attached to the / the second semiconductor die or semiconductor chip assembly (808) and the second En the portion (706) is attached to a third metal region (804) of the carrier (802) to provide a direct electrical connection between the second semiconductor die or die assembly (808) and the third metal region (804) of the carrier (802); and a magnetic field sensor (104) attached to the metal clip (702), the magnetic field sensor (104) of the second connection module (700) operating to sense a magnetic field produced by current passing through the metal clip (702) of the second connection module (700) flows. Carrier structure according to one of the Claims 11 until 20th , which further comprises a plurality of electrical conductors (810), the different of the metal areas (804) of the carrier (802) with electrical contact points (714) on a side of the magnetic field sensor (104) facing away from the metal clamp (702), are arranged to connect.

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