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DE102008033511A8 - Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem - Google Patents

Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem Download PDF

Info

Publication number
DE102008033511A8
DE102008033511A8 DE102008033511A DE102008033511A DE102008033511A8 DE 102008033511 A8 DE102008033511 A8 DE 102008033511A8 DE 102008033511 A DE102008033511 A DE 102008033511A DE 102008033511 A DE102008033511 A DE 102008033511A DE 102008033511 A8 DE102008033511 A8 DE 102008033511A8
Authority
DE
Germany
Prior art keywords
flash memory
programming
memory system
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008033511A
Other languages
English (en)
Other versions
DE102008033511A1 (de
Inventor
Moo-Sung Yongin Kim
Young-Ho Yongin Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102008033511A1 publication Critical patent/DE102008033511A1/de
Publication of DE102008033511A8 publication Critical patent/DE102008033511A8/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE102008033511A 2007-07-10 2008-07-07 Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem Withdrawn DE102008033511A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2007-0069261 2007-07-10
FR10-2007-0069261 2007-07-10
KR1020070069261A KR101308014B1 (ko) 2007-07-10 2007-07-10 플래시 메모리 장치 및 그것의 프로그램 리커버리 방법

Publications (2)

Publication Number Publication Date
DE102008033511A1 DE102008033511A1 (de) 2009-01-29
DE102008033511A8 true DE102008033511A8 (de) 2009-04-30

Family

ID=40157611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008033511A Withdrawn DE102008033511A1 (de) 2007-07-10 2008-07-07 Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem

Country Status (4)

Country Link
US (2) US7804712B2 (de)
JP (1) JP5289845B2 (de)
KR (1) KR101308014B1 (de)
DE (1) DE102008033511A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101308014B1 (ko) * 2007-07-10 2013-09-12 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 리커버리 방법
KR101682662B1 (ko) * 2009-07-20 2016-12-06 삼성전자주식회사 3차원 메모리 장치 및 그것의 프로그램 방법
KR101119343B1 (ko) * 2010-04-29 2012-03-06 주식회사 하이닉스반도체 반도체 메모리 장치의 프로그램 방법
KR101734204B1 (ko) * 2010-06-01 2017-05-12 삼성전자주식회사 프로그램 시퀀서를 포함하는 플래시 메모리 장치 및 시스템, 그리고 그것의 프로그램 방법
US8374031B2 (en) * 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
KR101162000B1 (ko) * 2010-12-30 2012-07-03 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
TWI486955B (zh) * 2011-03-23 2015-06-01 Macronix Int Co Ltd 快閃記憶體裝置與其程式化方法
US8644081B2 (en) * 2011-03-23 2014-02-04 Macronix International Co., Ltd. Flash memory device and programming method thereof
KR101873548B1 (ko) * 2012-03-29 2018-07-02 삼성전자주식회사 공유 비트 라인 구조를 가지는 비휘발성 메모리 장치의 프로그램 방법
US9152497B2 (en) 2013-08-23 2015-10-06 Sandisk Technologies Inc. Data recovery from blocks with gate shorts
KR102333738B1 (ko) 2015-02-03 2021-12-01 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
KR102355580B1 (ko) * 2015-03-02 2022-01-28 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 저장 장치 및 그것의 동작 방법
KR102670996B1 (ko) * 2016-12-29 2024-05-30 삼성전자주식회사 비휘발성 메모리 장치 및 그 프로그램 방법
KR102775179B1 (ko) * 2017-01-20 2025-03-04 삼성전자주식회사 리커버리 구간을 가변하는 불휘발성 메모리 장치 및 그 동작방법
US10614886B2 (en) 2017-09-22 2020-04-07 Samsung Electronics Co., Ltd. Nonvolatile memory device and a method of programming the nonvolatile memory device
JP7293060B2 (ja) 2019-09-17 2023-06-19 キオクシア株式会社 半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07320487A (ja) 1994-05-20 1995-12-08 Sony Corp 半導体不揮発性記憶装置
TW365001B (en) * 1996-10-17 1999-07-21 Hitachi Ltd Non-volatile semiconductor memory apparatus and the operation method
JP3810985B2 (ja) * 2000-05-22 2006-08-16 株式会社東芝 不揮発性半導体メモリ
JP4059065B2 (ja) * 2002-11-14 2008-03-12 日本電信電話株式会社 メモリ回路及びデータ消去及び書き込み方法
US6829167B2 (en) 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
JP4203372B2 (ja) * 2003-08-26 2008-12-24 富士雄 舛岡 不揮発性半導体記憶装置及びそれを備えてなる液晶表示装置
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4157065B2 (ja) * 2004-03-29 2008-09-24 株式会社東芝 半導体記憶装置
JP4713873B2 (ja) * 2004-11-12 2011-06-29 株式会社東芝 半導体記憶装置
JP4690713B2 (ja) * 2004-12-08 2011-06-01 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
JP4284300B2 (ja) * 2005-05-02 2009-06-24 株式会社東芝 半導体記憶装置
JP4907925B2 (ja) * 2005-09-09 2012-04-04 株式会社東芝 不揮発性半導体記憶装置
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
KR100745554B1 (ko) 2005-12-28 2007-08-03 최종수 자동주사장치
KR101308014B1 (ko) * 2007-07-10 2013-09-12 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 리커버리 방법

Also Published As

Publication number Publication date
US20110002174A1 (en) 2011-01-06
US8085589B2 (en) 2011-12-27
JP5289845B2 (ja) 2013-09-11
KR20090005876A (ko) 2009-01-14
KR101308014B1 (ko) 2013-09-12
US7804712B2 (en) 2010-09-28
DE102008033511A1 (de) 2009-01-29
JP2009020995A (ja) 2009-01-29
US20090016111A1 (en) 2009-01-15

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Legal Events

Date Code Title Description
8196 Reprint of faulty title page (publication) german patentblatt: part 1a6
R005 Application deemed withdrawn due to failure to request examination