DE102006046499A1 - Information memory has layer, which consist of multiple conducting paths supplied with current, and conducting paths do not run parallel to each other and integrated organic sensors has bias layer magnetization - Google Patents

Abstract

The invention relates to an information store in which information is stored by magnetization of material of the information store, wherein the information is readable by detecting the magnetization, wherein a first layer (1) is present, which consists of a plurality of strip conductors (4, 5, 6 ), which can be acted upon by current, that this layer (1) at least one further layer (7) is assigned from a magnetizable material, said at least one further layer (7) of the information storage is used, said at least one further layer (7 ) is in turn associated with a layer (10) having a plurality of integrated organic sensors (11, 12), with which the magnetization states of the magnetizable material of the at least one further layer (7) can be read out.

Description

The The present invention relates to an information storage after Preamble of claim 1.

such Information stores are known in the context of computers. Such magnetic memory, for example, as so-called Floppy disks or as hard disks integrated in the computer used. The hard disks can also as independent Components can be connected to corresponding interfaces of a computer.

There are also theoretical approaches to the realization of volatile or non-volatile storage based on organic polymers and molecules (including organometallic) known. With regard to a technical realization, the materials based on PVDF (poly-vinylidene difluoride) are the most advanced. In particular, the copolymer with trifluoroethylene (PVDF-PtrFE; 70:30) exhibits the properties sufficient for medium to low density storage applications. The ferroelectricity of this class of material serves as the basis for the storage application. To the documentation is on the publications A. Bune, S. Ducharme, V. Fridkin, L. Blinov, S. Palto, N. Petukhova, S. Yudin in Appl. Phys. Lett. 67 (26) (1995) 3975 and to A. Bune, V. Fridkin, S. Ducharme, L. Blinov, S. Palto, AV Sorokin, S. Yudin, A. Zlatkin in Nature 391 (1998) 874 ,

Based on inorganic materials, concepts for changing the conductivity by phase transformation to chalcogenides or ion diffusion in glasses are used. With regard to the chalcogenides is currently on the website: http://www.ovonyx.com/ovonyxtech.html directed. Regarding internal diffusion in glasses, refer to the publication of the ASU Center for Solid State Research; Axon Technologies Corp. under http://www.eas.asu.edu/~ers/research/ersresearch/index.html such as http://intraweb.eas.asu.edu/research/award.cfm?awd=200338 directed.

analog Storage concepts are also found for organic materials. Of the Donor acceptor complex of 1,4-phenylenediamine and 3-nitrobenzalmalononitrile shows conductivity differences in amorphous or crystalline phase. Doping and Dedotation of a organic n-conjugated semiconductor by salt additives also results to change the conductivity of layers.

For example, let's look at the publications HJ Gao, K. Sohlberg, ZQ Xue, HY Chen, SM Hou, LP Ma, XW Fang, SJ Pang, SJ Pennycook in Phys. Rev. Lett. 84 (2000) 1780-1783 referenced as well HJ Krieger, SV Trubin, SB Vashenko, NF Yudanov in Syn. Met. 122 (2001) 199-202 ,

Circuit phenomena have also been observed in purely organic films of substantially dielectric character. The state of the art is on this K. Sakai, H. Matsuda, H. Kawada, K. Eguchi, T. Nakagiri in Appl. Phys. Lett. 53 (14) (1988) 1274-1276 referenced as well CP Collier, EW Wong, M. Belohradsky, FM Raymo, JF Stoddart, PJ Kuekes, RS Williams, JR Heath in Science 285 (1999) 391, and D. Ma, M. Aguiar, JA Freire, IA Hummelgen in Adv. Mater , 12 (14) (2000) 1063-1066 , There is mentioned, for example, that anthracene units that are attached to a polymethacrylate backbone, can serve as a sink for carriers (support). If these are filled by applying an electric field, current paths with increased charge carrier mobility arise. The conductivity is essentially determined by hole conduction.

Of the The present invention is based on the object, alternatives for the Design of an information store to propose.

These The object is achieved according to the present invention according to claim 1, by an information storage in which by a magnetization of Information store material is an information store takes place, the information being detected by a magnetization are readable, a first layer is present, which consists of several Conductor tracks exists, this layer at least one more Layer is assigned from a magnetizable material, wherein this at least one more layer of information storage serves, this at least one further layer turn a Layer is assigned to the several integrated organic sensors having, with which the magnetization states of the magnetizable material the at least one further layer can be read out.

The Another layer of the magnetizable material is from the first layer electrically decoupled.

Corresponding the arrangement of the conductor tracks in the first layer, the other Arrangement of an arrangement of thin ferromagnetic elements Layers exist (for example, alloys of NiFe or amorphous CoFeNi or composite layers of polymers and magnetic Particles). These elements are assigned to the printed conductors in this way, that the individual elements by energizing the individual Conductor tracks are magnetized differently.

alternative the further layer can also be continuous and have only local magnetization transitions (domains), which then cause a stray field ("memory cell array"). In this case have to the transitions accordingly be arranged the conductor tracks.

The individual elements of the magnetizable layer or regions, delimited by the magnetization transitions are associated with integrated organic sensors, which by means of the magnetoresistive effect the magnetization of the corresponding Detect area of the magnetizable layer.

at the embodiment according to claim 2, the first layer is in turn from several individual layers, which have interconnects in nonparallel Running towards each other, wherein the interconnects of the individual layers isolated from each other.

By the non-parallel direction of the tracks creates power matrices, over the by an appropriate energization of the conductor tracks to the individual Points corresponding magnetic fields are generated for magnetization can.

Especially Advantageously, the non-parallel conductor tracks are perpendicular to one another oriented. By doing so leaves advantageous one possible high precision at the local resolution reach the magnetic fields.

at The embodiment according to claim 3, the integrated organic Sensors on Biasschichtmagnetisierung on.

Corresponding The direction of bias magnetization becomes the magnetic field of information storage reinforced or toned down. This is advantageous signal quality in the resistance signals of the sensor improved.

at the embodiment according to claim 4, the Biasschichtmagnetisierung generated by integrated tracks.

Thereby let yourself Advantageously adjust the bias field comparatively precise.

at the embodiment according to claim 5, a readout of the magnetization states of the magnetizable Material, adding the characteristic of the integrated organic sensor is moved.

The single figure shows the structure of an information store in the individual layers.

It is a first shift 1 to see, in turn, several individual layers 2 . 3 having, wherein in these individual layers 2 . 3 each conductor tracks 4 . 5 . 6 available. These individual layers 2 . 3 and especially the tracks 4 . 5 . 6 these individual layers 2 . 3 are isolated from each other.

It can be seen that the tracks 4 . 5 the first single layer 2 are oriented perpendicular to the tracks 6 the second single layer 3 , In the illustrated embodiment, only one conductor track 6 to see. But it is in this second single layer 3 several tracks present, leading to the illustrated trace 6 run parallel.

With the tracks 4 . 5 . 6 can be a current matrix represent, with the appropriate energization of the individual tracks 4 . 5 . 6 Locally limited different magnetic fields can be displayed. This is because of the fact that at the intersection points of the superimposed interconnects 4 . 5 such as 6 the magnetic fields of the currents in the respective tracks 4 . 5 such as 6 overlap.

It is another layer 7 present, which consists of a magnetizable material. The material may, for example, consist of a matrix arrangement of thin ferromagnetic layers (for example NiFe alloy or amorphous CoFeNi alloy) or also of composite layers of polymers and magnetic particles. Due to the matrix arrangement, this further layer 7 in individual elements 8th . 9 divided.

The matrix arrangement with the individual elements 8th . 9 is the intersecting tracks 4 . 5 . 6 the first layer 1 assigned.

As an alternative to this matrix arrangement of the individual elements 8th . 9 can the further layer 7 be carried out continuously, with only local magnetization transitions are present, which then cause a stray field ("memory cell array").

Furthermore, a layer 10 present, consisting of integrated organic sensors 11 . 12 is constructed. These sensors are the matrix elements or the local magnetization transitions of the further layer 7 assigned. The sensors may be transistors, for example. The sensors can also be constructed such that their resistances are evaluated. The resistors in this case have an asymmetrical characteristic with respect to the field zero point.

It can be seen in the illustrated embodiment that the individual sensors 11 . 12 in turn are built up of individual layers. The lowest of these layers is a layer with a bias magnetization. Depending on the Ori entierung of the magnetic field, which arises due to the information storage, this magnetic field of the storage layer is amplified or attenuated. This results in different resistance signals of the integrated organic sensor.

alternative to this layer with the bias magnetization, the bias magnetic field also be produced by means of integrated tracks, through the one Electricity flows. By doing so leaves the bias field can be adjusted precisely with a good spatial resolution.

alternative In addition, the information can also be read by the integrated organic sensor (OMR sensor) is a transistor whose characteristic is moved.

Claims (5)

Information storage in which information is stored by a magnetization of material of the information store, the information being readable by a recognition of the magnetization, characterized in that a first layer ( 1 ), which consists of several tracks ( 4 . 5 . 6 ), which can be acted upon by electricity, that this layer ( 1 ) at least one further layer ( 7 ) is assigned from a magnetizable material, said at least one further layer ( 7 ) of the information storage, this at least one further layer ( 7 ) turn a layer ( 10 ), which has several integrated organic sensors ( 11 . 12 ), with which the magnetization states of the magnetisable material of the at least one further layer ( 7 ) are readable. Information store according to claim 1, characterized in that the first layer ( 1 ) again from several individual layers ( 2 . 3 ), the printed conductors ( 4 . 5 ; 6 ), which run in a non-parallel direction to each other, wherein the conductor tracks ( 4 . 5 ; 6 ) of the individual layers ( 2 . 3 ) are isolated from each other. Information store according to claim 1 or 2, characterized in that the integrated organic sensors ( 11 . 12 ) have a bias layer magnetization. Information store according to Claim 3, characterized that the bias layer magnetization of integrated interconnects is produced. Information memory according to claim 1 or 2, characterized in that a readout of the magnetization states of the magnetizable material takes place by the characteristic curve of the integrated organic sensor ( 11 . 12 ) is moved.