DE102004040504B4 - Test arrangement for molecular components - Google Patents

Abstract

Test arrangement for molecular components,
In which a first or lower contact device (14) is formed with a surface region (14a),
In which a second or upper contact device (18) is formed with a surface region (18a),
In which a test material region (16) is formed as an arrangement (16 ') of a plurality of molecules (16-1) between the first contact device (14) and the second contact device (18),
In which the first and the second contact device (14, 18) are in the form of first and second electrodes in direct electrical contact with the test material region (16),
- In which an upper probe device (30) in a Abgreifbereich (18A) of the second contact device (18) mechanically placed and thereby mechanically and electrically contacted with the second contact device (18),
In which an electrically insulating buffer material region (40) is formed on the surface region (14a) of the first contact device (14) with at least one recess (42),
- at which the ...

Description

The The present invention relates to a molecular assay Components.

newer Developments for use electronic components and electronic assemblies Increased number of arrangements with or from molecular layers of organic Materials. These offer a great deal of potential Applications. In addition to molecular semiconductor memories, in which the memory elements or memory cells based on organic Semiconductor materials are and will be, including sensor components in question.

Often occurs in the development of such electronic components or assemblies based on molecular layers of organic materials the problem on that appropriate molecular devices with regard to on their physical and in particular electrical / electronic Properties must be tested. These are z. B. between contact devices corresponding material areas a material to be tested introduced. To study the electrical and electronic properties of the between the contact devices introduced test materials, it is necessary to contact devices even contact with appropriate measuring probes. These will z. B. on respectively provided surfaces of the contact devices mechanically applied and with a certain force or with a certain pressure mechanically contacted with the surface areas. It is problematic that by the mechanical contacting also a pressure between the contact devices constructed and thus is exercised on the interposed test material. This can lead to a change of the test material provided between the contact devices and in particular to its destruction to lead. On the other hand, after a corresponding change or destruction of the test material locally also a touch between the contactors in a direct way the Be consequential, causing a short circuit between the contactors comes.

The US 2003/0139043 A1 relates to an apparatus and method for monitoring a plasma etch process in which a substrate is provided with a tester to contact it from the back side of the substrate to thereby receive measurement signals for monitoring the plasma process during the plasma process within a process chamber. The test device itself has, as an essential element, an antenna region which is provided by a doped polysilicon region, which is covered in a structured manner via a sequence of insulating material regions and via contacts. The antenna region is tapped via a field effect transistor arrangement.

The US Pat. No. 6,087,196 A relates to a manufacturing method for organic semiconductor devices, wherein individual bottom electrodes are provided on a substrate. These are spatially spaced from one another via isolation regions and are electrically insulated from one another. Above these electrodes are formed organic material regions which function as organic islands. A further provided top electrode covers the entire structure.

The US 2003/0194630 A1 relates to photoimageable molecular circuits in which the use of a photoresist is to be avoided in the structuring process. Nevertheless, it should be possible with this approach, the production of a crossing area or crossing point between two lines provided.

The Publication "Optimizing Polymer Field-Effect Devices ", The Ohio State University, Summer Physics REU, September 2003 by Carter et al. discloses field effect transistors on the basis organic materials for creating active material areas.

From the DE 101 47 954 A1 is a method for producing biocompatible structures using so-called chemically amplified photoresists known. In particular, the group of so-called CARL photoresists is described in connection with their synthesis. In this case, a first polymer is provided which has anchor groups for the attachment of a biocompatible compound. The result is a structurable photoresist in which the biocompatible compound is coordinated to the anchor groups of this first polymer.

Of the Invention is based on the object, a test arrangement for molecular To provide components in which appropriate test materials based on molecular material areas on particularly simple and yet reliable Way, while avoiding short circuits can be tested.

Is solved the task in a test arrangement for molecular devices according to the invention with the Characteristics of the independent Claim 1. Advantageous developments of the test arrangement according to the invention for molecular Components are the subject of the dependent claims.

proposed becomes a test arrangement for molecular Components in which a first or lower contact device with a surface area is formed, in which a second or upper contact device with a surface area is formed, in which a test material area as an arrangement a plurality of molecules between the first contact device and the second contact device is formed, wherein the first and the second contact device as first and second electrode in direct electrical contact formed with the test material area, in which an upper Measuring probe device in a Abgreifbereich the second contact device mechanically placed and thereby with the second contact device is formed mechanically and electrically contactable, in which an electrically insulating buffer material area on the surface area the first contact device is formed with at least one recess is where the buffer material area with or from a photoimageable or photostructured photoresist formed from a polymeric material is, in which the recess in the buffer material area respectively down to the surface area the first contact device is formed reaching, in which the test material area the surface area of the first contact device only in the region of the respective recess in the buffer material area in a contact region of the first contact device directly mechanically is formed and electrically contacting and in which the Tapping range of the second contact device to one for each Recess in the buffer material area and the respective contact area the first contact device corresponding contact area the second contact means laterally spaced in or on the surface area the second contact device is formed.

at the test arrangement according to the invention for molecular It is thus provided inter alia that a first or lower contact device is formed rich with a Oberflächenbe, that a second or upper contact device with a surface area is formed such that a test material area as an arrangement a plurality of molecules between the first contact device and the second contact device is formed, that an upper probe device in a Abgreifbereich the second contact device mechanically placed and thereby with the second contact device mechanically and electrically is formed contactable that an electrically insulating Buffer material area on the surface region of the first contact device with at least one recess is formed, that the recess in the buffer material area, except for the surface area the first contact device is designed reaching that the test material area the surface area the first contact device only in the region of the respective recess in the buffer material region in a contact region of the first contact device is formed directly mechanically and electrically contacting and that the tapping range of the second contact device to a to the respective recess in the buffer material area and to the respective Contact area of the first contact device corresponding Contact region of the second contact device laterally spaced is formed, in particular in or on the surface area the second contact device.

proposed So is a test arrangement for molecular components, in which therefore inter alia between a first contact device and a second contact device a test material area is provided as an array of a plurality of molecules is. Furthermore, a probe device is in a tapping range the second contact device mechanically and electrically contacted. For mechanical relief is an electrically insulating buffer area on the surface area the first Kontaktin direction provided with a recess so in that the tapping region is formed laterally spaced apart from Area of the recess, in which alone the test material area to a direct mechanical and electrical contact between the first contact device and the second contact device leads.

at a preferred embodiment The test arrangement is the buffer material area with or out of one formed photoimageable or photo-structured photoresist.

Further it can be provided that the buffer material area with or is formed from a silicon-containing photoresist, in particular with high silicon content, preferably in the range of about 3 wt .-% to about 20% by weight, more preferably in the range of about 7% by weight to about 10% by weight.

alternative or additionally it can be provided that the buffer material area with or is formed from a CARL photoresist.

Further Is it possible, that the buffer material area with or from a Einlagenfotolack is trained.

alternative For this purpose, it may be provided that the buffer material area with or is formed from a multilayer photoresist.

According to another preferred embodiment of the test arrangement according to the invention, it is provided that the underside of the second contact device with one of the topography of An order from the buffer material region and the first contact device and their surfaces fully complementary topography is formed and taking into account a layer thickness for the test material area in a positive manner.

Further it is conceivable that the underside of the second contact device is formed with a topography through which the test material area with one completely compliant course to the topography of the arrangement of buffer material area and first contact area and their surfaces is formed and under consideration a layer thickness for the Test material area in positive fit Way.

Furthermore Is it possible, that the respective contact region of the first contact device respectively with a projecting at the bottom of the first contact device Contact element for at least partial engagement in each case associated recess is formed in the buffer material area and considering a layer thickness for the Test material area in positive fit Way.

Conceivable is also that the contact element of the second contact device each with a shape of a respective associated recess is formed in the buffer material region complementary shape and considering a layer thickness for the Test material area in a positive manner and way.

alternative or additionally is it inventively provided that the monolayer is in each case as essentially self-organizing Monolayer or designed as a so-called self-assembled monolayer is.

Especially It is advantageous if the respective monolayer consists essentially same molecules is formed, because then in a particularly suitable way and Monolayer self-assembly and stable structure with coherent properties established.

Advantageous is in particular the use of organic molecules in the Formation of monolayers.

to Realization of the monolayers, it is particularly appropriate that the molecules are formed with at least a first functional group. This functional group is in particular an end group. It can However, it should also be remembered that at substantially linear extending molecules several functional groups are provided, in particular next to a first end group a second end group, wherein the two end groups at the molecules or end regions of the molecules are arranged and formed.

Especially It is advantageous if the functional group with the first or lower contact device, in particular with a surface area of which is formed in interaction, in particular in the form of a chemical bonding or the like. Additionally or alternatively a corresponding interaction with the second or upper Contact device conceivable. Particularly advantageous would be z. B., that two end groups are provided in a linear molecule, each the end groups each associated with one of the contact devices is and interacts with them. In this way can be a particularly stable self-organizing monolayer form as a test material area.

In another advantageous development of the test arrangement according to the invention, it is provided that the functional group can be used as thiol group or as SH group, as S-acetyl group or S-COCH ₃ group, as disulfide group or SS group and / or as trisulfide group or SSS- Group is trained.

at another advantageous embodiment of the test arrangement according to the invention it is envisaged that the first or lower contact device or a part thereof and / or the second or upper contact device or a part thereof formed with or from at least one precious metal is, in particular from or with gold, silver and / or platinum.

These and other aspects of the present invention are further explained below:
More particularly, the invention relates to a test device for molecular devices using the CARL method, and more particularly to a molecular device test device using silicon-containing photoresists.

Electronic devices based on organic molecular layers are of interest for a variety of applications. One example is molecular semiconductor memories, in which the individual memory cells are realized, for example, by a self-assembled monolayer (SAM) of organic molecules with corresponding electronic functionality. In the case of a molecular component, the electrical contacting of the electroactive molecules is effected by two electrically conductive electrodes, wherein the two electrodes are arranged below or above the molecular layer, as shown schematically in FIG 1 shown.

To electronic components, such as For example, to test molecular memory cells, that is, to test their electronic functionality during or after the manufacturing process, it is usually necessary to contact both electrodes simultaneously. This is done in the simplest case by placing metallic probes on the electrodes. In the case of the upper electrode, however, the considerable mechanical load by the measuring probe can lead to a destruction of the molecular layer in the region of the attached measuring probe. If the contacting by the upper measuring probe takes place directly on the component, that is to say in the region in which the lower electrode is located below the molecular layer, the destruction of the molecular layer inevitably leads to the destruction of the component and a short circuit between the upper and lower electrodes. A safe electrical measurement is then impossible.

The The present invention describes a test arrangement in which the molecular layer before the considerable mechanical stress through conventional Protected probes is, without structuring of the lower electrode is necessary. Another advantage of the test arrangement according to the invention is that the area of the molecular device targeted by photolithographic methods can be adjusted.

in principle is the electrical characterization of molecular layers by means of Scanning probe microscopy possible. For example, a scanning tunneling microscope ("STM") or an atomic force microscope ("atomic force microscope," AFM) by use an electrically conductive Probe can be configured to allow the device to take electrical measurements allowed molecular components. In the case of Scanning Probe Microscopy The mechanical stress of the molecular layer can be extremely low be held so that damage or destruction of the To test the device can usually be avoided. Indeed are the time and cost of scanning probe microscopy extremely high, especially when scanning probe microscopy communicates is operated with electrical measurements, and consequently is the possible Throughput of samples to be tested extremely low.

at scanning probe microscopy is the area on which the molecular Layer is contacted, theoretically by the cross section at the Tip of the scanning probe given. Although this generally has the advantage that extremely small areas (For example, a few square nanometers) contacted and electrically characterized can be. However, a targeted adjustment of different contact surfaces is difficult or impossible. For the Test of the electrical functionality of molecular devices is but it is usually required or desirable to use the electrical To investigate properties of the cells as a function of the contact surface.

The An alternative to scanning probe microscopy is the use of conventional metallic probes, as they are more common in the test, for example Silicon transistors are used. For this purpose, metal needles, where the measuring cables are connected, lowered mechanically and placed on the electrodes to be contacted. In this Case, however, the mechanical stress on the electrodes is relative high and can easily in case of testing on molecular layers to their destruction to lead. If the contacting takes place directly on the component, that is in the area the lower electrode, then leads the destruction The molecular layer inevitably leads to a short between the electrodes and for destruction the memory cell.

Basically, damage to molecular layers when using conventional metallic probes can be avoided if the lower electrode is patterned, as schematically illustrated in FIG 2 shown.

By structuring the lower electrode according to 2 In principle, it is possible to define in a targeted manner those areas in which the lower and upper electrodes directly oppose each other (ie overlap, these are the active areas of the components), and those areas in which possibly a molecular layer below the upper electrode, but no lower electrode is located (in these areas contacting the upper electrode with conventional metallic probes is possible without creating a short circuit).

A disadvantage of this arrangement is the need to structure the lower electrode. In principle, a structuring of the lower electrode is possible in many cases, but very expensive, which is why it is generally desirable for test purposes in particular if structuring of the lower electrode can be avoided. Another disadvantage of in 2 The arrangement shown is the fact that the area of the molecular device is defined by the overlap of the two electrodes. This overlap is defined by the targeted alignment of one lithography step (the definition of the upper electrode) with respect to another lithography step (the definition of the lower electrode). Although this is basically feasible in terms of process technology, it is usually desirable for test purposes to avoid the alignment of levels in order to simplify the process.

In the test arrangement according to the invention, the molecular layer before the mechanical Load by the probes protected by an inert, electrically insulating buffer layer. The buffer layer is deposited on the lower electrode and photolithographically patterned, thereby defining the active region of the molecular device. After defining the buffer layer and eventually cleaning the resulting contact hole, the molecular layer is deposited, followed by deposition of the top electrode (see 3 ). The contacting of the upper electrode can thus take place outside the active component (which is defined solely by the size of the contact hole), wherein the buffer layer absorbs the mechanical load by the measuring probe. A structuring of the lower electrode is possible, but not required. The area of the molecular component is clearly and reproducibly defined by the size of the contact hole (ie by the exposure process) and can be adjusted over a wide range.

A important requirement for the buffer layer is its chemical and mechanical stability across from organic solvents and opposite Sauerstoffplasmaätzschritten. This requirement stems from the fact that in many cases the surface the lower electrode cleaned after processing the buffer layer must be prepared to prepare the deposition of the molecular layer, since the formation of high quality molecular layers usually requires a sufficiently pure surface of the lower electrode.

In principle, the realization of molecular test arrangements according to 3 using buffer layers of inorganic, electrically insulating materials, such as alumina and silica, conceivable. However, the use of inorganic buffer layers has several disadvantages. On the one hand, a relatively complicated vacuum process is necessary for the deposition of the buffer layer; On the other hand, the structuring of the buffer layer for opening the contact holes requires the use of an etching process or optionally a lift-off process.

Instead of an inorganic buffer layer can in the test arrangement according to the invention in particular, a photo-structurable photoresist be used.

Of the Photoresist is z. B. applied by spin coating on the substrate and depending on the desired size of the contact hole either with ultraviolet light (wavelength for example 365 nm, minimum contact hole size approximately 1 μm), with deep ultraviolet light (wavelength for example 248 nm, minimum Contact hole size about 0.3 μm) or with electron beams (minimum contact hole size approximately 10 nm).

In particular, the so-called CARL photoresists may be used as photoresists (CARL: "chemical amplification of resist lines", see, for example, US Pat. EP 0 395 917 A2 and US 5 234 793 A ). These CARL photoresists are z. B. for the exposure at 365 nm or for the exposure at 248 nm can be used. For other types of exposure, such as electron beams, other variants of the CARL photoresist have been developed and optimized.

alternative or additionally can as photoresists also all silicon-containing single and multilayer photoresists be used. A photoresist with a high silicon content is preferred used (eg, with a photoresist polymer based on polysiloxane derivatives).

To the exposure at the appropriate wavelength and optionally necessary subsequent heating step ("post-exposure bake," PEB), the substrate is in a basic Developer bath dipped; while the exposed in CARL paint Areas solved and so the desired contact holes open.

Further processing of CARL photoresists

To The development of the CARL photoresist becomes the substrate with the reactive CARL-silylation treated. These are usually bis-amino-alkyl-siloxanes, which are dissolved, for example, in isopropanol or hexanol; these solutions are known as commercial CARL silylation reagents and, for example described in the above patents.

• 1) In den Fotolack wird Silizium durch eine Quervernetzungsreaktion chemisch fest eingebunden. Der Lack erhält in Abhängigkeit von der Silylierdauer, das heißt in Abhängigkeit von der zeitlichen Dauer des durchgeführten Silyierungsschritts, einen mit steigender Reaktionszeit größer werdenden Silicon-artigen Charakter. Damit erhöht sich gleichzeitig die Stabilität gegenüber Lösungsmitteln.
• 2) Durch den Einbau des Siliziums verändert sich der Fotolack auch in seiner Geometrie: Er weitet sich lateral aus, das heißt das erzeugte Kontaktloch wird – ebenfalls abhängig von der Silylierzeit – kontrolliert immer weiter verkleinert. Diese geometrische Verkleinerung ist in sehr weiten Bereichen linear von der Silylierdauer abhängig und somit gut kontrollierbar.

Treatment with the reactive CARL silylation solution affects the CARL photoresist on the substrate in two ways:

• 1) Silicon is firmly bound to the photoresist by a cross-linking reaction. Depending on the duration of silylation, that is, depending on the time duration of the silylation step carried out, the varnish acquires an increasing silicone-like character with increasing reaction time. This simultaneously increases the stability to solvents.
• 2) As a result of the incorporation of silicon, the photoresist also changes in its geometry: it expands laterally, meaning that the generated contact hole is continuously reduced in size, also depending on the silylation time. This geometric reduction is linearly dependent on the Silylierdauer in very wide ranges and thus easily controlled.

thanks excellent stability of the CARL photoresist after silylation allows the buffer layer according to the invention the targeted cleaning of the contact holes (eg by using aggressive organic solvent or by plasma etching) and the subsequent deposition of molecular layers from different ones organic solutions, without damaging the buffer layer.

Further processing with silicon-containing photoresist

To During development, the substrate is briefly exposed to an oxygen plasma become, leading to a controlled oxidation of the silicon in the range the paint surface leads. A high silicon content in the photoresist matrix is particular advantageous. As a result, a few forms on the surface Nanometer-thick silicon oxide layer containing an increased chemical and mechanical stability of the Buffer layer, for example against organic solvents in subsequent wet-chemical processes or over others plasma etching steps guaranteed.

thanks excellent stability of the silicon-containing paint allows the buffer layer according to the invention the targeted cleaning of the contact holes (eg by using aggressive organic solvent or by plasma etching) and the subsequent deposition of molecular layers from different ones organic solutions, without damaging the buffer layer

A The core idea of the invention is the use of a photo-structurable Polymer as a buffer layer for the production of test arrangements for safe electrical characterization molecular devices. The buffer layer according to the invention is photolithographic structurable and stable organic solvents and plasma cleaning processes. The area of the molecular device is determined by the size of the contact hole (ie only by the exposure process) clearly and reproducibly Are defined.

Embodiment using from CARL photoresists

Deposition of the lower electrode:

On a cleaned glass substrate is used as the lower electrode thermal evaporation first a 10 nm thick layer of aluminum as adhesion promoter followed by deposited a 20 nm thick layer of gold. To the liability of CARL photoresist on the gold surface to improve, if necessary, the deposition of a molecular coupling agent takes place.

Lacquering of the substrate:

One CARL photoresist is spin-coated at 2000 rpm Minute for Applied as a lacquer layer on the substrate for 20 seconds. Subsequent heating to 140 ° C for 60 seconds lets that go solvent evaporate; This results in a solid photoresist layer.

Structuring by electron beam lithography:

The contact holes are written on the coated substrate using an electron beam with an energy of 40 keV and a dose of 10 μC / cm ² , for example with dimensions of 100 to 400 nm diameter. Thereafter, the substrate is heated to 140 ° C for 60 seconds ("post-exposure bake"). In the following development step, the polar polymer chains or polymer fragments are dissolved out by the aqueous, alkaline developer. For this purpose, the exposed substrate is treated by immersion in a glass dish with a tetramethylammonium hydroxide based developer. The development time is 60 seconds. The substrate is then rinsed with water for 20 seconds and blown dry with nitrogen.

CARL silylation of the photoresist:

The Substrate is immersed in a dipping process for 60 seconds with a reaction solution consisting of 2 weight percent diaminopropyl (oligosiloxane) and 98 weight percent Hexanol, treated. Subsequently The substrate is rinsed for 20 seconds with isopropanol and then with Nitrogen blown dry. While This silylation step becomes an upper photoresist layer size Amount of silicon chemically stable, which the paint over subsequent processes gives a very high stability.

Generation of the molecular layer and the upper electrode:

Subsequently, will the substrate with a short oxygen plasma step, in one Solvent bath and optionally in a UV-ozone reactor to remove the gold surface for deposition to prepare the electroactive thiols. Latter Immediately after cleaning the gold surface a solution Applied so that it through spontaneous formation of gold-sulfur bonds to form a self-assembled monolayer in the contact holes comes. Finally For example, the top electrodes are made to be 10 nm thick by deposition Layer of gold produced.

embodiment using silicon-containing photoresist

 Deposition of the lower electrode:

On a cleaned glass substrate is used as the lower electrode thermal evaporation first a 10 nm thick layer of aluminum as adhesion promoter followed by deposited a 20 nm thick layer of gold. To the liability of Silicon-containing photoresist on the gold surface to improve takes place optionally the deposition of a molecular adhesion promoter.

Lacquering of the substrate:

One silicon-containing photoresist, which also includes bilayer or bimolecular layers is formed by spin coating at 2000 revolutions per minute for 20 seconds applied as a lacquer layer on the substrate: then heating to 130 ° C for 60 seconds lets that go solvent evaporate. The result is a solid photoresist layer with a layer thickness of about 130 nm.

Structuring by electron beam lithography:

The contact holes are written on the coated substrate using an electron beam with an energy of 40 keV and a dose of 10 μC / cm ² , for example with dimensions of 100 to 400 nm diameter. Thereafter, the substrate is heated to 140 ° C for 60 seconds ("post-exposure bake"). In the following development step, the polar polymer chains or polymer fragments are dissolved out by the aqueous, alkaline developer. For this purpose, the exposed substrate is treated by immersion in a glass dish with a tetramethylammonium hydroxide based developer. The development time is 60 seconds. The substrate is then rinsed with water for 20 seconds and blown dry with nitrogen.

surface modification by means of oxygen plasma:

To During development, the substrate is briefly exposed to an oxygen plasma become, leading to a controlled oxidation of the silicon in the range the paint surface leads. As a result, a few nanometers thick forms on the surface Silicon oxide layer.

Generation of the molecular layer and the upper electrode:

Subsequently, will the substrate in a solvent bath and optionally in a UV-ozone reactor to remove the gold surface for deposition to prepare the electroactive thiols. The latter are immediately after the cleaning of the gold surface a solution applied, so it by spontaneous formation of gold sulfur bonds to form a self-assembled monolayer in the contact holes comes. Finally For example, the top electrodes are made to be 10 nm thick by deposition Layer of gold produced.

These and further aspects of the present invention will be discussed below with the attached Figures explained, which exemplary embodiments of the invention show:

1 is a schematic and sectional side view of a test arrangement for molecular devices of the prior art.

2 FIG. 12 is a schematic and sectional side view of another prior art molecular device test assembly. FIG.

3 is a schematic and sectional side view of a preferred embodiment of the test device for molecular devices according to the invention.

4 is a schematic and sectional side view of a test material area, as it can be used in an embodiment of the test arrangement according to the invention.

5 Figure 3 is a schematic representation of a molecule as may be used to form test material regions, and in particular monolayers, in one embodiment of the test device of the invention.

following become structurally and / or functionally similar or equivalent Structures or method steps denoted by the same reference numerals. Not in every case of their appearance is a detailed description the structural elements or process steps repeated.

The 1 and 2 show in schematic and cut side view test arrangements 10 ' for molecular devices, as used in the prior art. These known test arrangements 10 ' are based essentially on the same principle.

On a provided substrate 20 with a surface area 20a will be on the surface area 20a first, a first or lower contact device 14 with a surface area 14a educated. On the surface area 14a the first contact 14 then becomes a molecular layer as a test material area 16 educated. The se molecular layer as a test material area 16 consists of an arrangement 16 ' of molecules 16-1 , On the surface area 16a of the test material area 16 then becomes a second or upper contact device 18 with a bottom 18b and a top 18a or a surface area 18a educated.

To the electrical properties of the test material area 16 the underlying material becomes an electrical measuring circuit 50 provided, which in the in 1 shown embodiment in addition to a first probe device 30 and a second probe device 32 a measuring device 52 , z. B. an ammeter and a power source device or voltage source device 54 having. The first measuring probe device 30 is in and with a reference area 18A the second contact device 18 contacted mechanically and electrically. Accordingly, the second probe device 32 in and with a tap range 14A the first contact device 14 contacted mechanically and electrically.

In operation must now for contacting, in particular the first probe device 30 on the tapping area 18A the second contact device 18 a certain mechanical pressure can be exercised or be. It may happen that the second contact device 18 due to the mechanical pressure, the material of the test material area 16 directly below the picking area 18A displaces it and thus it to a short circuit between the first contact area 14 and the second contact area 18 comes, in the in 1 circled indicated area.

In the embodiment of the 2 becomes such a Kurzschlusskontaktierung between the first contact device 14 and the second contact device 18 thereby avoiding that the first contact device 14 and the second contact device 18 be structured according to such that the Abgreifbereich 18A for the first probe device 30 on the second contact device 18 laterally offset to the first contact device 18 is arranged so that below the tapping range 18A for the first probe device 30 on the second contact device 18 below the test material area 16 excluding the non-conductive substrate 20 is present, so that it is at a mechanical loading in the range of Abgreifbereichs 18A at most to a mechanical contact between the second contact device 18 and the surface area 20a of the substrate 20 can come and thus not to an electrical short circuit between the first contact device 14 and the second contact device 18 ,

The embodiment of the 2 However, from the prior art requires a relatively higher effort in the manufacturing process and in handling, in particular with regard to the structuring of the first contact device 14 and the second contact device 18 in relation to each other.

3 shows a schematic and sectional side view of a preferred embodiment of the test arrangement according to the invention 10 for molecular devices.

The test arrangement 10 according to the 3 also has a substrate as essential components 20 with a surface area 20a on which a first or lower contact device 14 with a surface area 14a is trained. On the surface area 14a the first contact device 14 However, initially there is a buffer material area directly 40 with a surface area 40a , However, this does not affect the entire surface 14a through the buffer material area 14 covered. The buffer material area 40 namely, has at least one recess 42 on such that through the recess 42 a contact area 14K as part of the surface area 14a the first contact device 14 from the buffer material area 40 is or is exposed. This is followed by the test material area 16 based on a molecular layer or arrangement 16 ' of molecules 16-1 , This molecular layer of the test material area 16 covers the surface area 40a of the buffer material area 40 , Furthermore, the recess is also 42 in the buffer material area with the test material area 16 lined so that also the contact area 14K the first contact device 14 in the recess 42 of the buffer material area 40 from the material of the test material area 16 is covered. To the test material area 16 then joins the surface 16a in the usual form, the second contact device 18 with her bottom 18b in direct contact with the test material area 16 at.

A mediation of the electrical contact between the first or lower contact device 14 and the second or upper contact device 18 through the test material area 16 takes place exclusively in the area of the recess 42 in the buffer material area 40 and thus directly above the contact area 14K the first contact device 14 instead, resulting directly above the contact area 14K the first contact device 14 a contact area 18K for the second or upper contact device 18 is defined. This contact area 18K for the second contact device 18 in particular has a contact element 18E on. This contact element 18E is shaped overall so that the bottom 18b the second contact device 18 has a topography which is complementary to the topography formed by the buffer material area 14 and in particular its surface area 40a in connection with the recess 42 ,

According to the invention, the tapping area 18A for the first probe device 30 laterally offset by a distance X to the contact area 14K the first contact device 13 and the contact area 18K the second contact device 18 so that it is at a corresponding mechanical pressure by the probe device 30 in the area of the survey area 18A at most can come to a mechanical contact between the second contact device 18 and the buffer material area 40 directly below the tapping area 18A ,

In 5 is schematically and exemplified that the respective molecule 16-1 the arrangement 16 ' for the test material area 16 has a substantially linear extension, each molecule 16-1 a linear range 16-3 with functional groups 16-2 and 16-4 at the opposite ends of the linear region 16-3 having. The terminal groups or functional groups 16-2 and 16-4 may be provided alternatively or jointly.

At the in 4 shown in schematic and sectional side view arrangement 16 ' for the test material area 16 In one embodiment of the test arrangement according to the invention, the first end groups or functional groups interact 16-2 of the molecules 16-1 with the surface area 14a the first or lower contact device 14 whereas the second end groups or functional groups 16-4 with the bottom 18b the second or upper contact device 18 Interact, in such a way that a self-organizing monolayer 16-5 for the arrangement 16 ' of the molecules 16-1 of the test material area 16 results, in which the single molecules 16-1 densely packed, in particular two-dimensionally arranged quasi crystalline, and optionally a common inclination relative to the normal to the surface 14a or to the bottom 18b exhibit.

10

test arrangement for molecular Components according to the present invention

10 '

test arrangement for molecular Components of the prior art

14

first or lower contact device, first or lower contact

14a

surface area

14A

Abgreifbereich

14K

contact area

16

Test material area

16a

surface area

16 '

arrangement of molecules

16-1

molecule

16-2

first or lower end group, first or lower functional group

16-3

linear region of the molecule 16-1

16-4

second or upper end group, second or upper functional group

16-5

Monolayer monolayer

18

second or upper contactor, second or upper contact

18a

surface area

18b

bottom

18A

Abgreifbereich

18E

contact element

18K

substratum

20

substratum

20a

surface area

30

first probe

32

second probe

50

measuring circuit

52

measuring device

54

Power supply means

X

distance

Claims (16)

Test arrangement for molecular components, - in which a first or lower contact device ( 14 ) with a surface area ( 14a ) is formed, - in which a second or upper contact device ( 18 ) with a surface area ( 18a ), in which a test material area ( 16 ) as an arrangement ( 16 ' ) a plurality of molecules ( 16-1 ) between the first contact device ( 14 ) and the second contact device ( 18 ) is formed, - in which the first and the second contact device ( 14 . 18 ) as first and second electrodes in direct electrical contact with the test material region ( 16 ), in which an upper measuring probe device ( 30 ) in a reference range ( 18A ) of the second contact device ( 18 ) mechanically and thereby with the second contact device ( 18 ) is formed mechanically and electrically contactable, - in which an electrically insulating buffer material area ( 40 ) on the surface area ( 14a ) of the first contact device ( 14 ) with at least one recess ( 42 ) is formed, - in which the buffer material area ( 40 ) is formed with or from a photo-structurable or photo-structured photoresist of a polymer material, - in which the recess ( 42 ) in the buffer material area ( 40 ) except for the surface area ( 14a ) of the first contact device ( 14 ), in which the test material area ( 16 ) the upper area ( 14a ) of the first contact device ( 14 ) only in the region of the respective recess ( 42 ) in the buffer material area ( 40 ) in a contact area ( 14K ) of the first contact device ( 14 ) is formed directly mechanically and electrically contacting and - in which the Abgreifbereich ( 18A ) of the second contact device ( 18 ) to a respective recess ( 42 ) in the buffer material area ( 40 ) and the respective contact area ( 14K ) of the first contact device ( 14 ) corresponding contact area ( 18K ) of the second contact device ( 18 ) laterally spaced in or on the surface area ( 18a ) of the second contact device ( 18 ) is trained. Test arrangement according to claim 1, wherein the buffer material area ( 40 ) with or from a silicon-containing photoresist with a high silicon content in the range of about 3 wt .-% to about 20 wt .-%, more preferably in the range of about 7 wt .-% to about 10 wt .-%, is formed. Test arrangement according to claim 1 or 2, wherein the buffer material area ( 40 ) is formed with or from a formed for chemical amplification of photoresist photoresist. Test arrangement according to one of the preceding claims, in which the buffer material area ( 40 ) is formed with or from a Einlagenfotolack. Test arrangement according to one of the preceding claims 1 to 3, wherein the buffer material area ( 40 ) is formed with or from a multilayer photoresist. Test arrangement according to one of the preceding claims, in which the underside ( 18b ) of the second contact device ( 18 ) with one of the topography of the arrangement from the buffer material area ( 40 ) and the first contact device ( 14 ) and their surfaces ( 40a . 14a ) completely complementary topography is formed and taking into account a layer thickness for the test material area ( 16 ) in a positive manner. Test arrangement according to one of the preceding claims, in which the underside ( 18b ) of the second contact device ( 18 ) is formed with a topography through which the test material area ( 16 ) with a completely compliant profile to the topography of the array of buffer material area ( 40 ) and first contact area ( 14 ) and their surfaces ( 40a . 14a ) and taking into account a layer thickness for the test material area ( 16 ) in a positive manner. Test arrangement according to one of the preceding claims, in which the respective contact area ( 18K ) of the first contact device ( 18 ) each with one at the bottom ( 18b ) of the first contact device ( 18 ) projecting contact element ( 18E ) for at least partial engagement in a respective associated recess ( 42 ) in the buffer material area ( 40 ) and taking into account a layer thickness for the test material area ( 16 ) in a positive manner. Test arrangement according to Claim 8, in which the contact element ( 18E ) of the second contact device ( 18 ) each with a shape of a respective associated recess ( 42 ) in the buffer material area ( 40 ) is formed complementary shape and taking into account a layer thickness for the test material area ( 16 ) in a positive manner. Test arrangement according to one of the preceding claims, in which the arrangement ( 16 ' ) of the molecules ( 16-1 ) as monolayer ( 16-5 ) or as a sequence of a plurality of monolayers ( 16-5 ) is trained. Test arrangement according to one of the preceding claims, in which molecules ( 16-1 ) of the arrangement ( 16 ' ) having at least one first functional group ( 16-2 . 16-4 ) as end group ( 16-2 ) are formed. Test arrangement according to one of Claims 10 or 11, in which the at least one functional group ( 16-2 . 16-4 ) anchoring the arrangement ( 16 ' ) on the first contact device ( 14 ) or on the second contact device ( 18 ) is trained. Test arrangement according to one of Claims 10 to 12, in which the monolayer ( 16-5 ) is formed in each case as a self-organizing monolayer. Test arrangement according to one of Claims 10 to 13, in which the monolayer ( 16-5 ) each of the same molecules ( 16-1 ) is trained. Test arrangement according to one of the preceding claims, in which the molecules ( 16-1 ) are formed as organic molecules. Test arrangement according to one of Claims 11 to 15, in which the functional group ( 16-2 ) with the first or lower contact device ( 14 ) and with a surface area ( 14a ) of which is in the form of a chemical bond in interaction.