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DE102004035617B8 - Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge - Google Patents

Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge Download PDF

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Publication number
DE102004035617B8
DE102004035617B8 DE102004035617.3A DE102004035617A DE102004035617B8 DE 102004035617 B8 DE102004035617 B8 DE 102004035617B8 DE 102004035617 A DE102004035617 A DE 102004035617A DE 102004035617 B8 DE102004035617 B8 DE 102004035617B8
Authority
DE
Germany
Prior art keywords
photomask blanks
producing substrates
substrates
producing
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102004035617.3A
Other languages
English (en)
Other versions
DE102004035617B4 (de
DE102004035617A1 (de
Inventor
Tsuneo Numanami
Masayuki Nakatsu
Masayuki Mogi
Tsuneyuki Hagiwara
Naoto Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Nikon Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Nikon Corp filed Critical Shin Etsu Chemical Co Ltd
Publication of DE102004035617A1 publication Critical patent/DE102004035617A1/de
Application granted granted Critical
Publication of DE102004035617B4 publication Critical patent/DE102004035617B4/de
Publication of DE102004035617B8 publication Critical patent/DE102004035617B8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE102004035617.3A 2003-07-25 2004-07-22 Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge Expired - Lifetime DE102004035617B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003/280466 2003-07-25
JP2003280466A JP4314462B2 (ja) 2003-07-25 2003-07-25 フォトマスクブランク用基板の製造方法

Publications (3)

Publication Number Publication Date
DE102004035617A1 DE102004035617A1 (de) 2005-03-31
DE102004035617B4 DE102004035617B4 (de) 2018-06-21
DE102004035617B8 true DE102004035617B8 (de) 2018-09-20

Family

ID=34074782

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004064328.8A Expired - Lifetime DE102004064328B3 (de) 2003-07-25 2004-07-22 Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge
DE102004035617.3A Expired - Lifetime DE102004035617B8 (de) 2003-07-25 2004-07-22 Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004064328.8A Expired - Lifetime DE102004064328B3 (de) 2003-07-25 2004-07-22 Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge

Country Status (5)

Country Link
US (1) US7344808B2 (de)
JP (1) JP4314462B2 (de)
KR (1) KR101108562B1 (de)
DE (2) DE102004064328B3 (de)
TW (1) TWI336024B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005043836A (ja) 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
JP4488822B2 (ja) * 2004-07-27 2010-06-23 株式会社東芝 露光用マスクの製造方法、露光装置、半導体装置の製造方法およびマスクブランクス製品
KR100710960B1 (ko) * 2004-09-29 2007-04-24 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
JP4750531B2 (ja) * 2005-10-27 2011-08-17 富士通株式会社 形状シミュレーション方法、プログラム及び装置
JP5231918B2 (ja) * 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
DE112009002622T5 (de) 2008-11-26 2012-08-02 Hoya Corp. Maskenrohlingsubstrat
MY155168A (en) * 2009-12-11 2015-09-15 Shinetsu Chemical Co Photomask-forming glass substrate and making method
KR101343292B1 (ko) 2011-04-12 2013-12-18 호야 가부시키가이샤 포토마스크용 기판, 포토마스크 및 패턴 전사 방법
FR2997822B1 (fr) * 2012-11-12 2014-12-26 Dbapparel Operations Bonnet de soutien-gorge a effet amplificateur
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
JP6256422B2 (ja) * 2014-08-07 2018-01-10 旭硝子株式会社 マスクブランク用ガラス基板
WO2018020994A1 (ja) 2016-07-27 2018-02-01 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク
EP3376287A1 (de) 2017-03-14 2018-09-19 ASML Netherlands B.V. Verfahren zur bestimmung der korrekturen für ein strukturierungsverfahren, vorrichtungsherstellungsverfahren, steuerungssystem für lithografievorrichtung und lithografievorrichtung
US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same
US11402751B2 (en) 2020-09-24 2022-08-02 Shin-Etsu Chemical Co., Ltd. Imprint mold-forming synthetic quartz glass substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10314212A1 (de) 2002-03-29 2003-11-06 Hoya Corp Verfahren zur Bestimmung einer Ebenheit eines Substrats für elektronische Bauelemente, Verfahren zur Herstellung des Substrats, Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske, Polierverfahren, Substrat für elektronische Bauelemente, Maskenrohling, Transfermaske und Poliervorrichtung
DE112004000465T5 (de) 2003-03-20 2006-08-10 Hoya Corp. Retikelsubstrat, Verfahren zum Herstellen des Substrats, Maskenrohling und Verfahren zum Herstellen des Maskenrohlings

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4196675B2 (ja) 2001-02-13 2008-12-17 株式会社ニコン 保持装置、保持方法、露光装置、およびデバイス製造方法
US6537844B1 (en) 2001-05-31 2003-03-25 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
JP3572053B2 (ja) 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
JP2005043836A (ja) 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
JP4232018B2 (ja) 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
TWI329779B (en) 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10314212A1 (de) 2002-03-29 2003-11-06 Hoya Corp Verfahren zur Bestimmung einer Ebenheit eines Substrats für elektronische Bauelemente, Verfahren zur Herstellung des Substrats, Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske, Polierverfahren, Substrat für elektronische Bauelemente, Maskenrohling, Transfermaske und Poliervorrichtung
DE112004000465T5 (de) 2003-03-20 2006-08-10 Hoya Corp. Retikelsubstrat, Verfahren zum Herstellen des Substrats, Maskenrohling und Verfahren zum Herstellen des Maskenrohlings

Also Published As

Publication number Publication date
KR20050012689A (ko) 2005-02-02
DE102004035617B4 (de) 2018-06-21
DE102004064328B3 (de) 2022-02-17
KR101108562B1 (ko) 2012-06-01
US7344808B2 (en) 2008-03-18
US20050020083A1 (en) 2005-01-27
DE102004035617A1 (de) 2005-03-31
TWI336024B (en) 2011-01-11
JP4314462B2 (ja) 2009-08-19
JP2005043838A (ja) 2005-02-17
TW200517772A (en) 2005-06-01

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