DE102004004476B3 - Resin cover application to a system wafer, comprises applying a cover to a carrier via a connection layer, and then mechanically removing the carrier and connection layer - Google Patents
Resin cover application to a system wafer, comprises applying a cover to a carrier via a connection layer, and then mechanically removing the carrier and connection layer Download PDFInfo
- Publication number
- DE102004004476B3 DE102004004476B3 DE102004004476A DE102004004476A DE102004004476B3 DE 102004004476 B3 DE102004004476 B3 DE 102004004476B3 DE 102004004476 A DE102004004476 A DE 102004004476A DE 102004004476 A DE102004004476 A DE 102004004476A DE 102004004476 B3 DE102004004476 B3 DE 102004004476B3
- Authority
- DE
- Germany
- Prior art keywords
- carrier
- lids
- system wafer
- active components
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 8
- 239000011347 resin Substances 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 33
- 239000010410 layer Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Die vorliegende Erfindung betrifft gehäuste Bauelemente und insbesondere gehäuste Bauelemente, die aktive, mechanisch empfindliche Komponenten und/oder Komponenten aufweisen, deren Funktion durch die zur Herstellung eines Gehäuses typischerweise verwendete Pressmasse beeinträchtigt werden können, wie beispielsweise Bulk-Acoustic-Wave-Filter (BAW-Filter), Surface-Acoustic-Wave-Filter (SAW-Filter) bzw. Oberflächenwellen-Filter, oder mikromechanische Elemente wie Resonatoren, Sensoren oder Aktoren.The The present invention relates to packaged devices, and more particularly packaged Components, the active, mechanically sensitive components and / or Have components whose function by the manufacture a housing typically used molding compound impaired can be such as bulk acoustic wave filters (BAW filters), surface acoustic wave filters (SAW filter) or surface wave filter, or micromechanical Elements such as resonators, sensors or actuators.
Derartige aktive Komponenten werden verpackt, indem man direkt auf den Wafer vor dem Vereinzeln und Weiterverarbeiten der Halbleiterchips zum Schutz der aktiven Komponenten ein Gehäuse aufbringt, welches einen "Boden" und "Deckel" aufweist, wobei die aktive Komponente gegebenenfalls zuerst auf dem Boden befestigt und elektrisch kontaktiert wird und dann durch Aufbringen des Deckels gegen Umwelteinflüsse geschützt wird.such Active components are packaged by going directly to the wafer before the separation and further processing of the semiconductor chips for Protection of the active components a housing applies, which has a "bottom" and "lid", wherein optionally the active component first attached to the ground and electrically contacted and then by applying the lid against environmental influences protected becomes.
Aus
den Druckschriften
Aus
der
- – Bereitstellen eines Systemwafers mit aktiven Komponenten;
- – Bereitstellen eines Trägers mit Deckeln aus Harz, wobei die Deckel über eine Fügeschicht mit dem Träger verbunden sind;
- – Ausrichten und Aufbringen des Trägers auf den Systemwafer, wobei die Deckel auf Rahmenstrukturen angeordnet werden, welche die aktiven Komponenten umgeben;
- – Ablösen des Trägers und der Fügeschicht von den Deckeln;
- – Vereinzeln der mit einem Deckel versehenen Halbleiterchips des Systemwafers.
- Providing a system wafer with active components;
- - Providing a carrier with lids of resin, wherein the lids are connected via a bonding layer with the carrier;
- - Aligning and applying the carrier to the system wafer, wherein the lids are arranged on frame structures surrounding the active components;
- Detaching the carrier and the bonding layer from the covers;
- - Separating the lidded semiconductor chips of the system wafer.
Die Deckelgröße entspricht dabei in etwa der Größe der aktiven Oberfläche einer einzelnen aktiven Halbleiterchipstruktur auf dem Systemwafer. Um eine effiziente Handhabung dieser relativ kleinen Deckel zu ermöglichen, werden diese zuerst auf einen zweiten Wafer, den sogenannten "Träger", aufgebracht mittels einer später wieder durch Ätzen oder Auflösen zu entfernenden Fügeschicht, der sogenannten "Opferschicht".The Cover size corresponds about the size of the active surface a single active semiconductor chip structure on the system wafer. To allow efficient handling of these relatively small lids, These are first applied to a second wafer, the so-called "carrier", by means of one later again by etching or dissolve to be removed, the so-called "sacrificial layer".
Statt die Deckel also einzeln auf die jeweilige Rahmenstruktur aufzubringen, wird zuerst der mit den Deckeln versehene Träger auf den Systemwafer mit den Rahmenstrukturen aufgebracht und in einem zweiten Schritt der Träger durch Ablösen bzw. Abätzen der Opferschicht entfernt. Zurück bleibt – neben dem wiederverwendbaren Träger – der Systemwafer mit den verkapselten aktiven Komponenten.Instead of The lids so individually apply to the respective frame structure, First, the lidded carrier is carried along to the system wafer applied to the frame structures and in a second step of carrier by detachment or etching removed from the sacrificial layer. Back stays - next to that reusable carrier - the system wafer with the encapsulated active components.
Für das Ablösen des Trägers muss eine flüssige Reaktionslösung vom Rand des aus Systemwafer und Träger bestehenden Waferverbundes bis zu dessen Mitte hin vordringen. Der Transport des Ätz- oder Lösemittels and die Opferschicht erfolgt dabei durch Diffusion.For the detachment of the carrier must be a liquid reaction solution from the edge of the system wafer and carrier wafer composite penetrate to its center. The transport of the etching or solvent and the sacrificial layer takes place by diffusion.
Dieser Vorgang ist bei den üblichen Waferdimensionen sehr zeitaufwendig und damit unwirtschaftlich. Ätzversuche mit einem 6 Inch-Wafer und einer 5 μm Kupfer-Opferschicht ergaben beispielsweise Ätzzeiten von mehr als 14 Stunden.This Operation is at the usual Wafer dimensions very time consuming and therefore uneconomical. Etching with a 6 inch wafer and a 5 μm copper sacrificial layer for example, etching times of more than 14 hours.
Außerdem belasten die langen Reaktionszeiten die Schutzstrukturen, also die Deckel und Rahmenstrukturen, stark und es besteht außerdem die Gefahr, dass diese in ihren mechanischen und/oder chemischen Eigenschaften verändert werden.In addition, burden the long reaction times the protective structures, so the lid and framework structures, strong and there is also a risk that these be changed in their mechanical and / or chemical properties.
Aufgabe der vorliegenden Erfindung ist es daher, ein Verfahren zum Ablösen des Trägers von den Deckeln bereitzustellen, welches nicht mit den genannten Nachteilen behaftet ist und welches dennoch ein kosteneffizientes und dennoch sicheres Konzept zum Häusen von sensiblen Bauelementen zu schaffen.task The present invention is therefore a method for detaching the carrier to provide the lids, which does not comply with the said Disadvantages and which nevertheless a cost-efficient and yet safe concept for housing sensitive components too create.
Diese Aufgaben werden durch den Gegenstand des unabhängigen Patentanspruchs gelöst. Vorteilhafte Weiterbildungen ergeben sich aus den jeweiligen abhängigen Patentansprüchen.These Tasks are solved by the subject-matter of the independent patent claim. advantageous Further developments emerge from the respective dependent claims.
Ein
Verfahren mit den Merkmalen des Oberbegriffs des Anspruchs 1 ist
bekannt aus der
Der vorliegenden Erfindung liegt die Erkenntnis zugrunde, dass Deckel, welche mittels eines Trägers auf die aktiven Komponenten des Systemwafers aufgebracht wurden, kostengünstig, mit wenig Zeitaufwand, geringst möglicher Belastung von Deckel und Rahmenstrukturen sowie kompatibel mit dem sonstigen Herstellungsprozess vom Träger abgelöst werden können, wenn Träger sowie Fügeschicht zwischen Träger und Deckeln so ausgestaltet sind, dass sich der Träger unter mechanischem Ablösen der Deckel von der Fügeschicht, wie etwa durch Abziehen, entfernen lässt, so dass mit Deckeln versehene aktive Komponenten auf dem Systemwafer zurückbleiben.The present invention is based on the finding that lids, which were applied by means of a carrier to the active components of the system wafer, cost, with little expenditure of time, least possible load on the lid and frame structures and compatible with the can be detached from the carrier when carrier and joining layer between the carrier and covers are designed so that the carrier can be removed with mechanical detachment of the cover from the joining layer, such as by peeling, so that provided with capped active components on the System wafers remain behind.
Gemäß der vorliegenden Erfindung wird ein Träger verwendet, welcher aus einem Material besteht, und/oder welcher dünn genug ist, um ein leichtes Biegen des Trägers beim Abziehen zu ermöglichen. Als Trägermaterial eignen sich neben Silizium oder Quarz, welche entsprechend dünn hergestellt werden müssen, auch Kunststoffmaterialien, wie Epoxidharze, was einen erheblichen Kostenvorteil mit sich bringt.According to the present Invention becomes a carrier used, which consists of a material, and / or which thin enough is to allow a slight bending of the carrier when peeling. As a carrier material are next to silicon or quartz, which are made correspondingly thin have to, also plastic materials, such as epoxy resins, which is a considerable Cost advantage brings with it.
Durch ein Verzichten auf wie oben beschriebene Ätzvorgänge zum Ablösen des Trägers werden außerdem Deckel und/oder Rahmen strukturen nicht chemisch angegriffen, so dass sich deren Haftung auf dem Systemwafer nicht verschlechtert und somit die Ausbeute beim späteren Vergießen mit Pressmasse erhöht wird.By dispensing with the above-described etching processes for detaching the carrier also become lids and / or frame structures are not chemically attacked, so that themselves their adhesion to the system wafer does not deteriorate and thus the Yield at later Shed increased with molding compound becomes.
Die Fügeschicht haftet sowohl auf dem Träger, als auch auf den Deckeln. Die Haftkraft der Fügeschicht auf dem Deckelmaterial ist jedoch geringer als die Haftkraft der Fügeschicht auf dem Trägermaterial. Damit wird erreicht, dass die mechanische Trennung von Träger und Deckeln einfach und ohne Risiko einer Beschädigung der auf den Rahmenstrukturen aufgebrachten Deckeln durchgeführt werden kann.The Add layer sticks both on the carrier, as well as on the lids. The adhesive force of the bonding layer on the cover material However, it is less than the adhesive force of the bonding layer on the substrate. This ensures that the mechanical separation of the carrier and Cover easily and without risk of damage to the frame structures applied lids are performed can.
Die Deckel werden auf dem Träger erzeugt, indem auf diesem in einem ersten Schritt eine Schicht, welche ein photostrukturierbares Harz aufweist, wie beispielsweise ein Epoxidharz, über der Fügeschicht, welche z. B. Aluminium aufweisen kann, aufgebracht wird. Anschließend wird diese Schicht gemäß herkömmlicher photolithographischer Verfahren strukturiert, also selektiv belichtet und die nicht belichteten Bereiche durch Ablösen entfernt, so dass Deckel mit den gewünschten Dimensionen auf dem Träger zurückbleiben.The Lids are on the carrier generated by a layer in this, in a first step, which has a photopatternable resin, such as an epoxy resin, over the marriage story, which z. B. aluminum, is applied. Subsequently, will this layer according to conventional structured photolithographic process, that is selectively exposed and the unexposed areas are removed by peeling, leaving the lid with the desired Dimensions on the carrier remain.
Der so vorbereitete Träger mit den Deckeln wird auf dem Systemwafer über den aktiven Komponenten ausgerichtet und durch Bonden oder Kleben daran befestigt.Of the so prepared carrier with the lids being on the system wafer over the active components aligned and attached to it by bonding or gluing.
Die Erfindung wird im Folgenden anhand von Ausführungsbeispielen entsprechend der Zeichnung beschrieben.The Invention will be described below with reference to exemplary embodiments described the drawing.
Die
aktiven Komponenten
Die
Rahmenstruktur
Aufgabe
der Rahmenstruktur
Sowohl
für die
Rahmenstruktur
Auf
den Rahmenstrukturen
Die
in
Zur
einfachen Handhabung wird der Systemwafer
Nach
dem vollständigen
Ablösen
des Trägers
Zur
Fertigstellung der gehäusten
Bauelemente wird der Systemwafer
- 11
- HalbleiterchipSemiconductor chip
- 22
- Außenkontakteexternal contacts
- 33
- Deckelcover
- 44
- Rahmenstrukturframe structure
- 55
- Systemwafersystem wafer
- 66
- FügeschichtAdd layer
- 77
- Trägercarrier
- 88th
- aktive Komponenteactive component
- 99
- SägestrasseSägestrasse
- 1010
- Waferverbundwafer assembly
- ZZ
- Richtung der Abziehbewegungdirection the withdrawal movement
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004004476A DE102004004476B3 (en) | 2004-01-28 | 2004-01-28 | Resin cover application to a system wafer, comprises applying a cover to a carrier via a connection layer, and then mechanically removing the carrier and connection layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004004476A DE102004004476B3 (en) | 2004-01-28 | 2004-01-28 | Resin cover application to a system wafer, comprises applying a cover to a carrier via a connection layer, and then mechanically removing the carrier and connection layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004004476B3 true DE102004004476B3 (en) | 2005-07-07 |
Family
ID=34638797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004004476A Expired - Fee Related DE102004004476B3 (en) | 2004-01-28 | 2004-01-28 | Resin cover application to a system wafer, comprises applying a cover to a carrier via a connection layer, and then mechanically removing the carrier and connection layer |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102004004476B3 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007067453A3 (en) * | 2005-12-07 | 2007-08-30 | Honeywell Int Inc | Surface acoustic wave pressure sensors |
WO2007057814A3 (en) * | 2005-11-17 | 2007-10-11 | Koninkl Philips Electronics Nv | Electronic device comprising a mems element |
DE102006052693B4 (en) * | 2005-11-18 | 2009-04-16 | Denso Corporation, Kariya | Method for manufacturing a semiconductor sensor |
US8501534B2 (en) | 2008-07-16 | 2013-08-06 | Infineon Technologies Ag | Method for housing an electronic component in a device package and an electronic component housed in the device package |
DE102014109213A1 (en) * | 2014-07-01 | 2016-01-07 | Hochschule Furtwangen | Process for producing a composite of a perforated substrate and a polymer membrane for microsystem technology and corresponding composite |
US10435292B2 (en) | 2016-07-20 | 2019-10-08 | Infineon Technologies Ag | Method for producing a semiconductor module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19619921A1 (en) * | 1995-05-18 | 1996-12-05 | Nippon Denso Co | Mfg. semiconductor device having capped element |
EP0791616A1 (en) * | 1996-02-14 | 1997-08-27 | Mitsubishi Chemical Corporation | Process for producing polysuccinimide and use of said compound |
US6332568B1 (en) * | 2000-01-14 | 2001-12-25 | Sandia Corporation | Wafer scale micromachine assembly method |
WO2002056367A1 (en) * | 2001-01-10 | 2002-07-18 | Silverbrook Research Pty. Ltd. | Wafer scale molding of protective caps |
DE10206919A1 (en) * | 2002-02-19 | 2003-08-28 | Infineon Technologies Ag | Production of a cover for a region of a substrate used for a SAW or BAW filter or a micromechanical element comprises forming a frame structure in the region of the substrate, and applying a lid structure on the frame structure |
-
2004
- 2004-01-28 DE DE102004004476A patent/DE102004004476B3/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19619921A1 (en) * | 1995-05-18 | 1996-12-05 | Nippon Denso Co | Mfg. semiconductor device having capped element |
EP0791616A1 (en) * | 1996-02-14 | 1997-08-27 | Mitsubishi Chemical Corporation | Process for producing polysuccinimide and use of said compound |
US6332568B1 (en) * | 2000-01-14 | 2001-12-25 | Sandia Corporation | Wafer scale micromachine assembly method |
WO2002056367A1 (en) * | 2001-01-10 | 2002-07-18 | Silverbrook Research Pty. Ltd. | Wafer scale molding of protective caps |
DE10206919A1 (en) * | 2002-02-19 | 2003-08-28 | Infineon Technologies Ag | Production of a cover for a region of a substrate used for a SAW or BAW filter or a micromechanical element comprises forming a frame structure in the region of the substrate, and applying a lid structure on the frame structure |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007057814A3 (en) * | 2005-11-17 | 2007-10-11 | Koninkl Philips Electronics Nv | Electronic device comprising a mems element |
DE102006052693B4 (en) * | 2005-11-18 | 2009-04-16 | Denso Corporation, Kariya | Method for manufacturing a semiconductor sensor |
US7598118B2 (en) | 2005-11-18 | 2009-10-06 | Denso Corporation | Method of manufacturing semiconductor sensor |
WO2007067453A3 (en) * | 2005-12-07 | 2007-08-30 | Honeywell Int Inc | Surface acoustic wave pressure sensors |
US7651879B2 (en) | 2005-12-07 | 2010-01-26 | Honeywell International Inc. | Surface acoustic wave pressure sensors |
US8501534B2 (en) | 2008-07-16 | 2013-08-06 | Infineon Technologies Ag | Method for housing an electronic component in a device package and an electronic component housed in the device package |
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