[go: up one dir, main page]

DE10192100T1 - Abtastkarte und Verfahren zu deren Herstellung - Google Patents

Abtastkarte und Verfahren zu deren Herstellung

Info

Publication number
DE10192100T1
DE10192100T1 DE10192100T DE10192100T DE10192100T1 DE 10192100 T1 DE10192100 T1 DE 10192100T1 DE 10192100 T DE10192100 T DE 10192100T DE 10192100 T DE10192100 T DE 10192100T DE 10192100 T1 DE10192100 T1 DE 10192100T1
Authority
DE
Germany
Prior art keywords
manufacture
scanning card
scanning
card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10192100T
Other languages
English (en)
Inventor
Kouichi Wada
Takehisa Takoshima
Yasuhiro Maeda
Akira Shimokoube
Seiichi Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of DE10192100T1 publication Critical patent/DE10192100T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06744—Microprobes, i.e. having dimensions as IC details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06772—High frequency probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE10192100T 2000-05-18 2001-05-17 Abtastkarte und Verfahren zu deren Herstellung Withdrawn DE10192100T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000145975A JP3650722B2 (ja) 2000-05-18 2000-05-18 プローブカードおよびその製造方法
PCT/JP2001/004135 WO2001088551A1 (fr) 2000-05-18 2001-05-17 Carte a sondes et procede de fabrication

Publications (1)

Publication Number Publication Date
DE10192100T1 true DE10192100T1 (de) 2003-01-30

Family

ID=18652406

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10192100T Withdrawn DE10192100T1 (de) 2000-05-18 2001-05-17 Abtastkarte und Verfahren zu deren Herstellung

Country Status (7)

Country Link
US (1) US6809539B2 (de)
JP (1) JP3650722B2 (de)
KR (1) KR100588695B1 (de)
CN (1) CN1222776C (de)
DE (1) DE10192100T1 (de)
TW (1) TW508629B (de)
WO (1) WO2001088551A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261905B2 (en) * 1999-04-07 2007-08-28 Pure Bioscience Disinfectant and method of making
US6890953B2 (en) * 2000-04-06 2005-05-10 Innovative Medical Services Process for treating water
JP2003202350A (ja) * 2001-12-28 2003-07-18 Tokyo Cathode Laboratory Co Ltd プローブカード用探針、プローブカード用探針ユニット、プローブカード及びそれらの製造方法
US8080221B2 (en) 2002-08-05 2011-12-20 Palo Alto Research Center Incorporated Capillary-channel probes for liquid pickup, transportation and dispense using stressy metal
US7241420B2 (en) 2002-08-05 2007-07-10 Palo Alto Research Center Incorporated Capillary-channel probes for liquid pickup, transportation and dispense using stressy metal
US6924655B2 (en) * 2003-09-03 2005-08-02 Micron Technology, Inc. Probe card for use with microelectronic components, and methods for making same
US7627445B2 (en) * 2003-11-26 2009-12-01 Advantest Corporation Apparatus for testing a device with a high frequency signal
JP4233463B2 (ja) * 2004-02-06 2009-03-04 三菱電機株式会社 高周波特性の測定方法およびそれに用いる高周波特性測定装置
JP4382593B2 (ja) * 2004-06-29 2009-12-16 山一電機株式会社 プローブユニット及びその製造方法
US7390740B2 (en) * 2004-09-02 2008-06-24 Micron Technology, Inc. Sloped vias in a substrate, spring-like contacts, and methods of making
JP4955395B2 (ja) * 2004-09-06 2012-06-20 日本電気株式会社 テストキャリア
US7184193B2 (en) * 2004-10-05 2007-02-27 Hewlett-Packard Development Company, L.P. Systems and methods for amorphous flexures in micro-electro mechanical systems
JP4216823B2 (ja) * 2005-03-04 2009-01-28 田中貴金属工業株式会社 プローブピン及び該ブロ−ブビンを備えたブロ−ブカ−ド
JP4729348B2 (ja) * 2005-07-04 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7245135B2 (en) * 2005-08-01 2007-07-17 Touchdown Technologies, Inc. Post and tip design for a probe contact
US7362119B2 (en) * 2005-08-01 2008-04-22 Touchdown Technologies, Inc Torsion spring probe contactor design
US7628871B2 (en) * 2005-08-12 2009-12-08 Intel Corporation Bulk metallic glass solder material
JP5232382B2 (ja) * 2005-12-06 2013-07-10 株式会社エンプラス プローブチップ及びプローブカード
US7705458B2 (en) * 2006-06-20 2010-04-27 Intel Corporation Bulk metallic glass solders, foamed bulk metallic glass solders, foamed-solder bond pads in chip packages, methods of assembling same, and systems containing same
US7659790B2 (en) * 2006-08-22 2010-02-09 Lecroy Corporation High speed signal transmission line having reduced thickness regions
US7378832B2 (en) * 2006-08-22 2008-05-27 Lecroy Corporation Probing high-frequency signals
CN100552456C (zh) * 2006-08-29 2009-10-21 日月光半导体制造股份有限公司 具有多层弹性的微机电探针卡
JP2008155333A (ja) * 2006-12-25 2008-07-10 Japan Science & Technology Agency 金属ガラスを用いたマイクロマシン及びそれを用いたセンサ並びにその製造方法
US8138859B2 (en) * 2008-04-21 2012-03-20 Formfactor, Inc. Switch for use in microelectromechanical systems (MEMS) and MEMS devices incorporating same
KR101010671B1 (ko) * 2008-09-03 2011-01-24 윌테크놀러지(주) 프로브와 프로브의 제조 방법
KR101126690B1 (ko) 2009-07-02 2012-04-02 남재우 Ｍｅｍｓ 기술을 이용한 테스트 소켓 및 그 제조방법
US7857642B1 (en) * 2009-09-02 2010-12-28 Leviton Manufacturing Co., Inc. Inductive amplifier probe tip
WO2013134568A1 (en) * 2012-03-07 2013-09-12 Advantest Corporation Shielded probe array
US20130234746A1 (en) * 2012-03-07 2013-09-12 Advantest Corporation Shielded probe array
US9678108B1 (en) 2014-02-06 2017-06-13 Advantest America, Inc. Methods to manufacture semiconductor probe tips
CN106024667B (zh) * 2016-07-25 2018-08-03 深圳市信维通信股份有限公司 一种提高非晶测试效率的测试装置
US11262384B2 (en) 2016-12-23 2022-03-01 Intel Corporation Fine pitch probe card methods and systems
KR101962702B1 (ko) * 2017-06-28 2019-03-27 주식회사 아이에스시 포고핀용 탐침부재, 이의 제조 방법 및 이를 포함하는 포고핀
US11268983B2 (en) 2017-06-30 2022-03-08 Intel Corporation Chevron interconnect for very fine pitch probing
US10775414B2 (en) 2017-09-29 2020-09-15 Intel Corporation Low-profile gimbal platform for high-resolution in situ co-planarity adjustment
US11061068B2 (en) 2017-12-05 2021-07-13 Intel Corporation Multi-member test probe structure
US11204555B2 (en) 2017-12-28 2021-12-21 Intel Corporation Method and apparatus to develop lithographically defined high aspect ratio interconnects
US11073538B2 (en) 2018-01-03 2021-07-27 Intel Corporation Electrical testing apparatus with lateral movement of a probe support substrate
US10866264B2 (en) 2018-01-05 2020-12-15 Intel Corporation Interconnect structure with varying modulus of elasticity
US10488438B2 (en) 2018-01-05 2019-11-26 Intel Corporation High density and fine pitch interconnect structures in an electric test apparatus
US11543454B2 (en) 2018-09-25 2023-01-03 Intel Corporation Double-beam test probe
US10935573B2 (en) 2018-09-28 2021-03-02 Intel Corporation Slip-plane MEMS probe for high-density and fine pitch interconnects
WO2021069566A1 (en) 2019-10-09 2021-04-15 Federal Institute Of Metrology Metas Coaxial wafer probe and corresponding manufacturing method
JP7676231B2 (ja) * 2021-06-02 2025-05-14 株式会社日本マイクロニクス プローブユニット
FR3162523A1 (fr) 2024-05-21 2025-11-28 Institut Federal De Metrologie Metas Sonde de mesure pour le test de dispositifs semi-conducteurs sur une plaquette, et son procédé de fabrication
WO2025233253A1 (en) 2024-05-04 2025-11-13 Institut Federal De Metrologie Metas A measurement probe for on-wafer testing of semiconductor devices, and the manufacturing process thereof

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128381A (ja) * 1987-11-12 1989-05-22 Fujitsu Ltd Ｌｓｉウエハの試験方法
JPH01150862A (ja) * 1987-12-07 1989-06-13 Mitsubishi Electric Corp プローブカード
US4965865A (en) * 1989-10-11 1990-10-23 General Signal Corporation Probe card for integrated circuit chip
US5166774A (en) * 1990-10-05 1992-11-24 Motorola, Inc. Selectively releasing conductive runner and substrate assembly having non-planar areas
JP3031743B2 (ja) * 1991-05-31 2000-04-10 健 増本 非晶質合金材の成形加工方法
JP3276389B2 (ja) * 1992-03-06 2002-04-22 富士通株式会社 電圧測定装置
JPH06308158A (ja) * 1993-04-27 1994-11-04 Nitto Denko Corp 導通検査装置
JP3502875B2 (ja) * 1994-06-03 2004-03-02 株式会社ルネサステクノロジ 接続装置およびその製造方法
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
JPH09126833A (ja) * 1995-10-31 1997-05-16 Olympus Optical Co Ltd 非晶質合金製の梁構造体とその作製方法
JPH09196970A (ja) * 1996-01-24 1997-07-31 Advantest Corp プローブカード
JP3022312B2 (ja) 1996-04-15 2000-03-21 日本電気株式会社 プローブカードの製造方法
JP3028067B2 (ja) * 1997-01-16 2000-04-04 日本電気株式会社 多ピン高周波プローブ
US6245444B1 (en) * 1997-10-02 2001-06-12 New Jersey Institute Of Technology Micromachined element and method of fabrication thereof
JP3123483B2 (ja) * 1997-10-28 2001-01-09 日本電気株式会社 プローブカード及びプローブカード形成方法
JP3458684B2 (ja) * 1997-11-28 2003-10-20 三菱マテリアル株式会社 コンタクトプローブ
US6028436A (en) * 1997-12-02 2000-02-22 Micron Technology, Inc. Method for forming coaxial silicon interconnects
SG108210A1 (en) * 1998-06-19 2005-01-28 Advantest Corp Probe contactor formed by photolithography process
JP2000065852A (ja) 1998-08-24 2000-03-03 Nippon Signal Co Ltd:The 振動センサ
US6399900B1 (en) * 1999-04-30 2002-06-04 Advantest Corp. Contact structure formed over a groove
JP3099066B1 (ja) * 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法

Also Published As

Publication number Publication date
CN1380979A (zh) 2002-11-20
US20020163349A1 (en) 2002-11-07
JP3650722B2 (ja) 2005-05-25
WO2001088551A1 (fr) 2001-11-22
CN1222776C (zh) 2005-10-12
JP2001326259A (ja) 2001-11-22
KR100588695B1 (ko) 2006-06-12
TW508629B (en) 2002-11-01
KR20020035838A (ko) 2002-05-15
US6809539B2 (en) 2004-10-26

Similar Documents

Publication Publication Date Title
DE10192100T1 (de) Abtastkarte und Verfahren zu deren Herstellung
DE60131745D1 (de) Filtervorrichtung und verfahren zu deren herstellung
DE60134016D1 (de) Wabenstruktur und wabenfilter und verfahren zu deren herstellung
DE60104792D1 (de) Fe-Ni Permalloy und Verfahren zu deren Herstellung
ATE376098T1 (de) Vernetzte pulpe und verfahren zu deren herstellung
DE60221201D1 (de) Polyoxyalkylen-derivate und Verfahren zu ihrer Herstellung
DE60137117D1 (de) Kontaktlose ic-karte und verfahren zu ihrer herstellung
DE60115902D1 (de) Osteoimplantat und verfahren zu seiner herstellung
DE60228573D1 (de) Vernetztes elastin und verfahren zu deren herstellung
ATA10852001A (de) Bauelement und verfahren zu seiner herstellung
DE69937315D1 (de) Sicher zu öffnendes Dosenende und Verfahren zu seiner Herstellung
DE60117573D1 (de) Verschiedenartig gehärtete materialen und verfahren zur deren herstellung
DE60207327D1 (de) Spuleneinheit und Verfahren zu deren Herstellung
DE60131708D1 (de) Druckkopf und Verfahren zu dessen Herstellung
DE60114415D1 (de) Niob- und tantal-pulver und verfahren zu deren herstellung
ATE332997T1 (de) Celluloseether und verfahren zu deren herstellung
DE60111195D1 (de) Wässerige formulierungen und verfahren zu ihrer herstellung
DE60037325D1 (de) Eine optoelektronische anordnung und verfahren zu deren herstellung
DE60116486D1 (de) Gallengangstent und verfahren zu seiner herstellung
DE50107925D1 (de) Hochvolt-diode und verfahren zu deren herstellung
DE60226707D1 (de) Kunsthaare und verfahren zu deren herstellung
DE60014507D1 (de) Keramikfolie und Verfahren zu deren Herstellung
DE60106372D1 (de) Redox System und Verfahren
DE69928109D1 (de) Wässrige emulsion und verfahren zu deren herstellung
DE59913422D1 (de) Femfet-vorrichtung und verfahren zu deren herstellung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law

Ref document number: 10192100

Country of ref document: DE

Date of ref document: 20030130

Kind code of ref document: P

8125 Change of the main classification

Ipc: G01R 3128

8172 Supplementary division/partition in:

Ref document number: 10164967

Country of ref document: DE

Kind code of ref document: P

Q171 Divided out to:

Ref document number: 10164967

Country of ref document: DE

Kind code of ref document: P

8172 Supplementary division/partition in:

Ref document number: 10164995

Country of ref document: DE

Kind code of ref document: P

Q171 Divided out to:

Ref document number: 10164995

Country of ref document: DE

Kind code of ref document: P

8139 Disposal/non-payment of the annual fee