DE1005601B - Ground resistance - Google Patents
Ground resistanceInfo
- Publication number
- DE1005601B DE1005601B DEC6711A DEC0006711A DE1005601B DE 1005601 B DE1005601 B DE 1005601B DE C6711 A DEC6711 A DE C6711A DE C0006711 A DEC0006711 A DE C0006711A DE 1005601 B DE1005601 B DE 1005601B
- Authority
- DE
- Germany
- Prior art keywords
- ground resistance
- resistance
- resistors
- binding agent
- binders
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011230 binding agent Substances 0.000 claims description 8
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/001—Mass resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/307—Other macromolecular compounds
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Conductive Materials (AREA)
Description
Massewiderstand Die Erfindung betrifft Massewiderstände, die in der Elektrotechnik für die verschiedensten Zwecke verwendet «-erden. Diese sind in der Regel aus folgenden Komponenten zusammengesetzt: 1. Leiter- oder Halbleitermaterial, beispielsweise Kupfer-, Chrom-, Eisen-, Silber- oder anderes Metallpulver usw., oder deren. Oxyde, wie Fei 04, Cr. 03, Mn C2 usw. oder Kohlenstoff, Ruß, gemahlenen Koks oder Graphit, Karbide wie Bor- oder Siliciumcarbid, Borate oder Nitrite; 2. Isolier- oder Füllstoffe wie SiO2, Mg O, A12031 Speckstein, Porzellanmehl usw. ; 3. Bindemittel wie Wasserglas, Teer und Pech, Phosphorsäure, Zement, Glas, Harz oder Kunstharze. Besonders die mit Kunstharz gebundenen Widerstände werden in großem Umfang hergestellt, da die Fabrikation derartiger Widerstände einfach und billig ist und sie für viele Zwecke mit befriedigende Eigenschaften hergestellt werden können, ohne daß ein komplizierter Glühvorgang durchgeführt werden muß, der leicht eine große Streuung der Widerstandswerte mit sich bringt.Ground resistance The invention relates to ground resistors in the Electrical engineering used for a wide variety of purposes. These are in the Usually composed of the following components: 1. Conductor or semiconductor material, for example copper, chromium, iron, silver or other metal powder, etc., or their. Oxides such as Fei 04, Cr. 03, Mn C2 etc. or carbon, soot, ground Coke or graphite, carbides such as boron or silicon carbide, borates or nitrites; 2. Insulating or fillers such as SiO2, Mg O, A12031 soapstone, porcelain flour, etc.; 3. Binders such as water glass, tar and pitch, phosphoric acid, cement, glass, resin or synthetic resins. Resistances bonded with synthetic resin are particularly large Manufactured to a large extent, since the manufacture of such resistors is simple and cheap and they are manufactured with satisfactory properties for many purposes can without a complicated annealing process having to be carried out easily brings with it a large spread of the resistance values.
Allerdings weisen die mit Kunstharz gebundenen, Widerstände Nachteile auf, die sie für höherbeanispruchteVerwendungszwecke ausschließen. Außerdem ist die Einhaltung enger Widerstandsgrenzen, .schwierig, da die an das Pressen der Widerstände anschließende Trocknung und Kondensation sehr abhängig von verschiedenen Faktoren ist, die schwer genau unter Kontrolle gehalten werden können, z. B. Beschaffenheit des Kunstharzes, Kondensationsgrad, Polymerisationsstufe, Zeitdauer und Temperaturhöhe des Trockn.ungs- und. Härtungsprozesses.However, the resistors bound with synthetic resin have disadvantages which they exclude for more demanding uses. Also is adherence to narrow resistance limits, difficult, since the pressing of the resistors subsequent drying and condensation are very dependent on various factors that are difficult to keep precisely under control, e.g. B. Nature of the synthetic resin, degree of condensation, degree of polymerization, duration and temperature of the drying and. Hardening process.
Gegenstand der Erfindung ist die Verwendung eines Bindemittels für Massewiderstände, das sowohl hin, sichtlich der erzielten Widerstandseigenschaften als auch hinsichtlich der Vereinfachung des Herstellungsverfahrens der Widerstände außerordentliche Vorteile mit sich bringt. Derartige Bindemittel sind Polytrifluormonochloräthylen und Polytetrafluoräthylen, beides Stoffe, die heute im Handel als weißes Pulver erhältlich sind, bei Temperaturen über 250 und 300° erweichen und dabei zu festen Körpern. von sehr hoher Festigkeit verpreßt werden können.The invention relates to the use of a binder for Ground resistances, both in terms of the resistance properties achieved as well as with regard to the simplification of the manufacturing process of the resistors brings extraordinary advantages. Such binders are polytrifluoromonochlorethylene and polytetrafluoroethylene, both substances that are now commercially available as a white powder are available, soften at temperatures above 250 and 300 ° and thereby become solid Bodies. can be pressed with very high strength.
Der gegenüber dem Bekannten erzielte Fortschritt. liegt in. der Verbesserung folgender Eigenschaften: 1. Höhere Ternpera,turfestigkeit des Widerstandes. Während die kunstharzgebundenen Widerstände höchstens bis zu einer Temperatur von 150° C, solche mit Siliconharzen gebundenen mit 180 bis 200° C betrieben werden können, können die mit vorgeschlagenen Bindemitteln hergestellten Widerstände Termperaturen weit über 300° C ausgesetzt werdemD Die Widerstände sind damit spezifisch höher belastbar und können in den Abmessungen entsprechend kleiner gehalten werden.The progress made over the known. lies in improvement the following properties: 1. Higher temperature resistance of the resistor. While the synthetic resin-bonded resistors up to a temperature of 150 ° C, those bound with silicone resins can be operated at 180 to 200 ° C, the resistors produced with the proposed binders can achieve temperatures exposed to well over 300 ° C. The resistances are therefore specifically higher resilient and can be kept correspondingly smaller in size.
2. Die chemische Beständigkeit ist unvergleichlich besser, da das neue Bindemittel von keinen unter den üblichen Verwendungsbedingungen auftretenden chemischen Stoffen angegriffen werden, kann.2. The chemical resistance is incomparably better because that new binders of none that occur under normal conditions of use chemical substances can be attacked.
3. Widerstände mit den vorgeschlagenem. Bindemitteln weisen. bei Verwendung für Höchstspannungszwecke eine beträchtlich erhöhte Stoßfestigkeit auf.3. Resistors with the proposed. Binders. Using for extra high voltage purposes has a considerably increased shock resistance.
4. Die Herstellung ist bedeutend einfacher und hinsichtlich des Einhaltens. bestimmter Widerstandswerte beträchtlich sicherer, ebenso ist die Einstellung eines Widerstandswertes sehr viel einfacher, da nach dann Mischen und Pressen der endgültige Widerstandswert vorliegt, ohne daß eine mehr oder weniger lange Temperaturnachbehandlung erforderlich ist.4. The manufacture is significantly easier and in terms of compliance. certain resistance values are considerably safer, as is the setting of one Resistance value is much easier, since after mixing and pressing the final one Resistance value is present without a more or less long temperature post-treatment is required.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEC6711A DE1005601B (en) | 1952-11-26 | 1952-11-26 | Ground resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEC6711A DE1005601B (en) | 1952-11-26 | 1952-11-26 | Ground resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1005601B true DE1005601B (en) | 1957-04-04 |
Family
ID=7013972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEC6711A Pending DE1005601B (en) | 1952-11-26 | 1952-11-26 | Ground resistance |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1005601B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077306B (en) * | 1958-10-03 | 1960-03-10 | Conradty Fa C | Semiconductor body for voltage-dependent resistors |
| DE1282177B (en) * | 1967-08-02 | 1968-11-07 | Willy Gill | Voltage tester cartridge for use in a housing of a voltage tester made of translucent insulating material |
| DE1904223A1 (en) * | 1969-01-29 | 1970-08-06 | Okresni Stavebni P V Opave | Electrode for drying out damp walls |
| DE2740808A1 (en) * | 1976-09-13 | 1978-03-16 | Gen Electric | METAL OXYD VARISTOR |
| EP0038443A3 (en) * | 1980-04-21 | 1982-04-21 | International Business Machines Corporation | D.c. gas discharge display panel with internal memory |
| DE3216045A1 (en) * | 1981-04-30 | 1982-12-30 | Hitachi, Ltd., Tokyo | HIGH TEMPERATURE THERMISTOR |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2409948A (en) * | 1945-03-01 | 1946-10-22 | Du Pont | Polymeric materials |
| US2526059A (en) * | 1947-02-13 | 1950-10-17 | Allen Bradley Co | Fixed electrical resistor |
-
1952
- 1952-11-26 DE DEC6711A patent/DE1005601B/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2409948A (en) * | 1945-03-01 | 1946-10-22 | Du Pont | Polymeric materials |
| US2526059A (en) * | 1947-02-13 | 1950-10-17 | Allen Bradley Co | Fixed electrical resistor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077306B (en) * | 1958-10-03 | 1960-03-10 | Conradty Fa C | Semiconductor body for voltage-dependent resistors |
| DE1282177B (en) * | 1967-08-02 | 1968-11-07 | Willy Gill | Voltage tester cartridge for use in a housing of a voltage tester made of translucent insulating material |
| DE1904223A1 (en) * | 1969-01-29 | 1970-08-06 | Okresni Stavebni P V Opave | Electrode for drying out damp walls |
| DE2740808A1 (en) * | 1976-09-13 | 1978-03-16 | Gen Electric | METAL OXYD VARISTOR |
| EP0038443A3 (en) * | 1980-04-21 | 1982-04-21 | International Business Machines Corporation | D.c. gas discharge display panel with internal memory |
| DE3216045A1 (en) * | 1981-04-30 | 1982-12-30 | Hitachi, Ltd., Tokyo | HIGH TEMPERATURE THERMISTOR |
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