DD221206A1 - METHOD FOR PRODUCING SUBSTOECHIOMETRIC OXIDES ON SEMICONDUCTORS AND METALS - Google Patents
METHOD FOR PRODUCING SUBSTOECHIOMETRIC OXIDES ON SEMICONDUCTORS AND METALS Download PDFInfo
- Publication number
- DD221206A1 DD221206A1 DD25818983A DD25818983A DD221206A1 DD 221206 A1 DD221206 A1 DD 221206A1 DD 25818983 A DD25818983 A DD 25818983A DD 25818983 A DD25818983 A DD 25818983A DD 221206 A1 DD221206 A1 DD 221206A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- semiconductors
- layers
- metals
- substoechiometric
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 11
- 150000002739 metals Chemical class 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 3
- 229940021013 electrolyte solution Drugs 0.000 claims abstract description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 238000007743 anodising Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Die Erfindung betrifft ein Verfahren zur Oxydation von Halbleitern und Metallen, wobei substoechiometrische Oxidschichten erzeugt werden, die als Passivierungsschichten fuer elektronische Halbleiterbauelemente, Korrosionsschutzschichten zum Beispiel in elektrochemischen Solarzellen und als Antireflexionsschichten eingesetzt werden koennen. Es ist das Ziel der Erfindung, ein einfaches billiges Verfahren zur Herstellung duenner, substoechiometrischer Oxidschichten auf Halbleiter- oder Metallsubstraten bereitzustellen. Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren zu entwickeln, mit dem substoechiometrische Oxidschichten ohne Anwendung von Hochtemperatur- und Vakuumsprozessen in einfacher Weise auf Halbleiter- oder Metallsubstraten erzeugt werden koennen. Erfindungsgemaess wird die Aufgabe dadurch geloest, dass die Metalle und Halbleiter in nahezu wasserfreien Elektrolytloesungen (H2O-Gehalt 0,06 Vol.-%) anodisiert werden.The invention relates to a method for the oxidation of semiconductors and metals, wherein substoechiometric oxide layers are produced, which can be used as passivation layers for electronic semiconductor devices, corrosion protection layers, for example, in electrochemical solar cells and as antireflection layers. It is the object of the invention to provide a simple, inexpensive method for producing thin, sub-electriochord oxide layers on semiconductor or metal substrates. The invention has for its object to develop a method by which substoechiometrische oxide layers without application of high-temperature and vacuum processes can be easily generated on semiconductor or metal substrates. According to the invention, the object is achieved by anodizing the metals and semiconductors in virtually anhydrous electrolyte solutions (H2O content 0.06% by volume).
Description
Anwendungsgebiet der ErfindungField of application of the invention
Die Erfindung 'betrifft ein Verfahren, zur Oxydation von Halbleitern und Metallen, wobei substöchiometrische Oxidschichten erzeugt werden, die als Passivierungsschichten für elektronische Halbleiterbauelemente, ; Korrosionsschutzschichten zum Beispiel in elektrochemischen Solarzellen und als Antireflexionsschichten eingesetzt werden können.The invention relates to a method for the oxidation of semiconductors and metals, wherein sub-stoichiometric oxide layers are produced, which are used as passivation layers for electronic semiconductor components, Corrosion protection layers can be used for example in electrochemical solar cells and as antireflection layers.
Charakteristik der bekannten technischen LösungenCharacteristic of the known technical solutions
Es ist bekannt, zum Beispiel dünne SiO .-Schichten (i,5<x <2) durch eine Glimmentladungsreaktion von Silan oder Silan-Derivaten mit einem Oxydationsmittel wie sum Beispiel nitrose Gase oder O0 herzustellen /Priesley, F»B. and Gall, P.I. Thin Solid Films 69 (1980) 39/. Nachteilig ist hierbei der benötigte Plasma—Entladungsreaktor» SiO (1<x <2) kann auch durch Verdampfung von Siü-PulverIt is known, for example, to prepare thin SiO 2 layers (i, 5 <x <2) by a glow discharge reaction of silane or silane derivatives with an oxidizing agent such as, for example, nitrous gases or O 0 / Priesley, F »B. and Gall, PI Thin Solid Films 69 (1980) 39 /. The disadvantage here is the required plasma discharge reactor "SiO (1 <x <2) can also by evaporation of Siü powder
-6 -4 -6 -4
bei einem O9-Druck von 1 χ 10 - 1-χ 10 Torr und Ab-with an O 9 pressure of 1 χ 10 - 1-χ 10 Torr and
t —1t -1
scheidungsraten im Bereich von 20 A 5 erhalten werden /Pisarkiewicz, T. Thin Solid Films 67 (1980) 49/. Auch hier ist die benötigte Apparatur relativ aufwendig« Es ist bekannt, zum Beispiel TiO (x<2) durch reaktives Aufdampfen herzustellen /Biedermann, A0, Hacker, A·, Schirmer, G. und Walther, H.~G„ Thin Solid Films 85'.(19J31) 331/. Beim Atzen von Si in HF-HN1/--Gemischen können gefärbte ' Schichten entstehen, deren Zusammensetzung nach /Beckmann, K.H. Surface Science 3 (1965) 314/ zwischen H- SiO und H0SiO p. variiert, nach /Archer, R.Je J*PhyseChem«Solide 14 (i960) 104/ aber aus elementarem Si oder Si-Htyäriden bestehen könnte.Pisarkiewicz, T. Thin Solid Films 67 (1980) 49 /. Again, the required apparatus is relatively expensive. "It is known, for example, to produce TiO (x <2) by reactive vapor deposition / Biedermann, A 0 , Hacker, A *, Schirmer, G. and Walther, H. ~ G" Thin Solid Films 85 '. (19J31) 331 /. Etching of Si into HF-HN 1 / mixtures may result in colored layers whose composition is described by / Beckmann, KH Surface Science 3 (1965) 314 / between H-SiO and H 0 SiO p. varied to / Archer, RJ e * J Phys Chem e "Solid 14 (i960) 104 could / but for elemental Si or Si-H t consist yäriden.
« * HK i'. I; Λ; ί\ « HK i '. I; Λ ; ί \
Ziel der ErfindungObject of the invention
Es ist das Ziel der Erfindung,, ein einfaches, billiges Verfahren zur Herstellung dünner, substöchiometrischer~ Oxidschichten auf Halbleiter- oder Metallsubstraten bereitzustellen«It is the object of the invention to provide a simple, inexpensive process for the preparation of thin, sub-stoichiometric oxide films on semiconductor or metal substrates.
Darlegung des Wesens der ErfindungExplanation of the essence of the invention
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren zu entwickeln, mit dem substöchiometrische Oxidschichten ohne Anwendung von Hochtemperatur- und Vakuumprozessen in einfacher V/eise auf Halbleiter- oder Metallsubstraten erzeugt werden können.The invention has for its object to develop a method by which substoichiometric oxide layers without the use of high-temperature and vacuum processes can be easily generated on semiconductor or metal substrates.
Erfindungsgemäß wird die Aufgabe dadurch gelöst, daß die Metalle und Halbleiter in nahezu wasserfreien Elektrolytlösungen (H?0-Gehalt<0,06 Vo 1%) anodisiert werden«,According to the invention the object is achieved in that the metals and semiconductors are anodized in nearly anhydrous electrolyte solutions (H ? 0 content <0.06 Vo 1%),
Ausführungsbeispielembodiment
Die Erfindung soll nachstehend an einem Ausführung sbeispiel näher beschrieben werden»The invention will be described in more detail below with reference to an embodiment.
p-Si wird in einer galvanischen Zelle, die als Elektrolyt eine Lösung von KNO^ in Ethylenglykol « 0,06 Vol# H 0)p-Si is placed in a galvanic cell, which as electrolyte is a solution of KNO ^ in ethylene glycol «0.06 vol # H 0)
2 ?2?
enthält, bei einer Stromdichte von 7,0 mA/cm anoctisiert.contains anoctised at a current density of 7.0 mA / cm.
Nach einer Zeilspannungsänderung von 10 V wird die Anodisation abgebrochen.After a cell voltage change of 10 V, the anodization is stopped.
Anschließend.wird die entstandene Oxidschicht mit deionisiertem Wasser gespült« Danach ist an der Si-Oberfläche eine ca. 3 nm dicke SiB -Schicht (x<1,5) vorhanden. 'Subsequently, the resulting oxide layer is rinsed with deionized water. Thereafter, an approximately 3 nm thick SiB layer (x <1.5) is present on the Si surface. '
Jvjv
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD25818983A DD221206A1 (en) | 1983-12-20 | 1983-12-20 | METHOD FOR PRODUCING SUBSTOECHIOMETRIC OXIDES ON SEMICONDUCTORS AND METALS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD25818983A DD221206A1 (en) | 1983-12-20 | 1983-12-20 | METHOD FOR PRODUCING SUBSTOECHIOMETRIC OXIDES ON SEMICONDUCTORS AND METALS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD221206A1 true DD221206A1 (en) | 1985-04-17 |
Family
ID=5553141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD25818983A DD221206A1 (en) | 1983-12-20 | 1983-12-20 | METHOD FOR PRODUCING SUBSTOECHIOMETRIC OXIDES ON SEMICONDUCTORS AND METALS |
Country Status (1)
| Country | Link |
|---|---|
| DD (1) | DD221206A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1530065A1 (en) * | 2003-11-06 | 2005-05-11 | Rohm and Haas Electronic Materials, L.L.C. | Optical article |
-
1983
- 1983-12-20 DD DD25818983A patent/DD221206A1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1530065A1 (en) * | 2003-11-06 | 2005-05-11 | Rohm and Haas Electronic Materials, L.L.C. | Optical article |
| US8198120B2 (en) | 2003-11-06 | 2012-06-12 | Rohm And Haas Electronic Materials Llc | Optical article |
| US8716824B2 (en) | 2003-11-06 | 2014-05-06 | Rohm And Haas Electronic Materials Llc | Article having electrically conductive and selectively passivated patterns |
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