DD201462A1 - PROCESS FOR USING NICR RESISTANT LAYERS - Google Patents
PROCESS FOR USING NICR RESISTANT LAYERS Download PDFInfo
- Publication number
- DD201462A1 DD201462A1 DD23586981A DD23586981A DD201462A1 DD 201462 A1 DD201462 A1 DD 201462A1 DD 23586981 A DD23586981 A DD 23586981A DD 23586981 A DD23586981 A DD 23586981A DD 201462 A1 DD201462 A1 DD 201462A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- etching
- nicr
- sio
- layers
- copper
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 10
- 229910001120 nichrome Inorganic materials 0.000 abstract description 10
- 238000004090 dissolution Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Die Erfindung betrifft ein Verfahren zum Aetzen von NiCr-Widerstandsschichten, inbes. solchen, die mit SiO tief x dotiert sind, bei Anwesenheit von Kupfer. Die Aufgabe, ein im aktiven Aufloesungsbereich arbeitendes Aetzbad zu finden, wird durch die erfindungsgemaesse Verwendung einer Mischung aus Salzsaeure und Perchlorsaeure geloest.The invention relates to a method for etching of NiCr resistor layers, inbes. those doped with SiO x in the presence of copper. The task of finding an etching bath working in the active dissolution range is achieved by the use according to the invention of a mixture of hydrochloric acid and perchloric acid.
Description
235 86 9 8235 86 9 8
Lerm, Dr. Dipl. Phys. Albrecht C 23 P 1/02Lerm, dr. Dipl. Phys. Albrecht C 23 P 1/02
Pfeiffer, Dipl. Phys. Rolf-Gerd P 846/aPfeiffer, Dipl. Phys. Rolf-Gerd P 846 / a
Unger, Dr. Dipl. Chem. Sonja . 24.11.1981Unger, Dr. Dipl. Chem. Sonja. 24/11/1981
Verfahren zum Ätzen von NiCr - WiderstandsschichtenMethod of etching NiCr resistor layers
Die Erfindung betrifft ein Verfahren zum Ätzen von NiCr-Widerstandsschichten, insbs. solchen, die mit SiO do- : tiert sind, bei Anwesenheit von Kupfer· Die Erfindung findet bevorzugt Anwendung bei der Mikrostrukturierung von NiCr - Widerstandsschichten der Mikroelektronik.The invention relates to a method for etching NiCr resistor layers, insbs. those that do- with SiO: The advantage, in the presence of copper · The invention is preferably used in micro-structuring of NiCr - resistive layers of microelectronics.
Charakteristik der bekannten technischen Lösungen Bekannte Ätzlösungen für NiCr - Widerstandsschichten versagen bei der Anwesenheit von Kupfer. Die Anwesenheit von Kupfer bewirkt eine Verschlechterung bzw. völlige Verhinderung der Ätzung, so daß verbleibende NiCr - Schichtreste zu Kurzschlüssen im Bauelement führen können· In DE-AS 2.834.279 wird eine HCL - Ätzlösung, der K2S^. zugesetzt ist, zur Lösung dieses Problems vorgeschlagen» Bei den zur Verbesserung der elektrischen Eigenschaften mit SiO dotierten NiCr - Schichten zeigt dieses Bad jedoch keine Ätzwirkung bei SiO - Gehalten oberhalb 10$ bzw. es verbleiben Schichtrestbeläge bei geringeren Dotierungsgehalten· Characteristic of known technical solutions Known etching solutions for NiCr resistive layers fail in the presence of copper. The presence of copper causes a deterioration or complete prevention of the etching, so that remaining NiCr - layer residues can lead to short circuits in the device · In DE-AS 2,834,279 a HCL - etching solution, the K 2 S ^. However, in the case of the NiCr layers doped with SiO to improve the electrical properties, this bath does not show an etching effect at SiO contents above 10 $ or residual layer deposits remain at lower doping levels.
Es ist das Ziel der Erfindung, ein Verfahren und ein Ätzbad zum reproduzierbaren Ätzen von NiCr - Schichten, insbes. solchen, die mit SiO_ dotiert sind, bei Anwesenheit von Kupfer zu finden.It is the object of the invention to find a method and an etching bath for the reproducible etching of NiCr layers, in particular those doped with SiO 2, in the presence of copper.
17.P.F717.P.F7
235869 8235869 8
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren und ein Ätzmittel zum vollständigen selektiven, aktiven Ätzen von NiCr - Schichten, inbes. wenn diese mit SiO (1^x^2) dotiert sind, bei Anwesenheit von Kupfer anzugeben· Brfindungsgemäß wird die Aufgabe dadurch gelöst, daß eine Mischung aus Salzsäure und Perchlorsäure bei einer Temperatur von 300 - 35OK verwendet wird. Es hat sich gezeigt, daß in diesem Ätzmittel übliche Substratmaterialien, wie Glas, Keramik und oxidiertes Silizium und insbes. Kupfer, welches als Kontakt- oder Leitbahnschicht auf den ITiCr - Schichten aufgebracht ist, völlig inert sind· Die Herstellung der NiCrSiO - Struktüren erfolgt mittels bekannter fotolithografischer Mikrostrukturierung, wobei das naßchemische Ätzen mit Hilfe des erfindungsgemäßen Bades erfolgt. Durch Variation des Mischungsverhältnisses von Salzsäure und Perchlosäure und geeignete Verdünnung sind die Ätzzeiten entsprechend dem SiO - Gehalt der Schichten und der Schichtdicke an-The invention is based on the object, a method and an etchant for the complete selective active etching of NiCr - layers, inbes. If these are doped with SiO (1 ^ x ^ 2), indicate in the presence of copper According to the invention, the object is achieved in that a mixture of hydrochloric acid and perchloric acid at a temperature of 300 - 35OK is used. It has been found that conventional substrate materials, such as glass, ceramic and oxidized silicon, in particular copper, which is applied as a contact or interconnect layer on the ITiCr layers, are completely inert in this etchant. The production of the NiCrSiO structures is effected by means of known photolithographic microstructuring, wherein the wet-chemical etching is carried out using the bath according to the invention. By varying the mixing ratio of hydrochloric acid and perchloric acid and suitable dilution, the etching times are corresponding to the SiO content of the layers and the layer thickness.
Jl-JL
zupassen· Anwendbar ist das Bad bis zu einem SiO - Gehalt in den NiCr - Widerstandsschichten von 30%.· Applicable is the bath up to a SiO content in the NiCr resistive layers of 30%.
Ausführungsbeispiel ^n Zur näheren Illustration des erfindungsgemäßen Verfahrens soll folgendes Ausführungsbeispiel dienen· In das NiCrSiO / Cu - Schichtsystem werden zunächst die Cu - Strukturen durch fotolithografische Mikrostrukturierung übertragen mittels naßchemischen Ätzens in schwefelsaurer Kaliumdiehromatlösung, vorzugsweise 0,7mol KpCr2O7 und 1,3mol H3SO4 bei 32OK· Das Ätzen der 10/um dicken Kupferschicht erfolgt in drei Minuten· Dabei wird die freigelegte NiCrSiO - Widerstandsschicht nicht angegriffen. Die Her- Embodiment ^ n For a more detailed illustration of the process of the invention is to serve the following embodiment · In the NiCrSiO / Cu - layer system, first, the Cu - structures transmitted by photolithographic microstructuring by means of wet chemical etching in sulfuric acid Kaliumdiehromatlösung, preferably 0.7 mol kPCR 2 O 7 and 1,3mol H 3 SO 4 at 32OK · The etching of the 10 μm thick copper layer takes place in three minutes. · The exposed NiCrSiO resistor layer is not attacked. The
stellung der Lackmaske der Widerstandsstrukturen erfolgt fotolithographisch. Durch naßchemisches Ätzen werden die zu strukturierenden NiCrSiO - Schichten mit 2.0% SiO„ -"Position of the resist mask resist mask is photolithographically. By wet chemical etching, the NiCrSiO layers to be patterned with 2.0% SiO "-"
-Λ. Χ-Λ. Χ
Gehalt in ein Säuregemisch aus konz. HCL und konz. HCLO.Content in an acid mixture of conc. HCL and conc. HClO.
235 86 9 θ235 86 9 θ
eingebracht. Bei einem erfindungsgemäß verwendeten Mischungsverhältnis von 1:1 und einer Temperatur von 325K beträgt die Ätzzeit der 50nm dicken Widerstandsschicht 2,5min, Die Maßabweichung der geätzten Strukturen lag unterhalb 1/um. Es konnte kein Ätzangriff des Kupfers festgestellt werden.brought in. At a mixing ratio of 1: 1 used according to the invention and a temperature of 325 K, the etching time of the 50 nm thick resistive layer is 2.5 min. The dimensional deviation of the etched structures was below 1 μm. No etching attack of the copper could be detected.
Claims (2)
gekennzeichnet dadurch, daß eine Mischung aus Salzsäure und Perchlorsäure "bei einer Temperatur zwischen 300K bis 35OK verwendet wird.Method for etching NiGr resistor layers, in particular those doped with SiO, in the presence of copper with a hydrochloric acid solution,
characterized in that a mixture of hydrochloric acid and perchloric acid "at a temperature between 300K to 35OK is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD23586981A DD201462A1 (en) | 1981-12-17 | 1981-12-17 | PROCESS FOR USING NICR RESISTANT LAYERS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD23586981A DD201462A1 (en) | 1981-12-17 | 1981-12-17 | PROCESS FOR USING NICR RESISTANT LAYERS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD201462A1 true DD201462A1 (en) | 1983-07-20 |
Family
ID=5535505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD23586981A DD201462A1 (en) | 1981-12-17 | 1981-12-17 | PROCESS FOR USING NICR RESISTANT LAYERS |
Country Status (1)
| Country | Link |
|---|---|
| DD (1) | DD201462A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1474811A4 (en) * | 2002-02-11 | 2005-04-06 | Nikko Materials Usa Inc | MORDAN AGE SOLUTION TO FORM AN ENOUGH RESISTANCE |
-
1981
- 1981-12-17 DD DD23586981A patent/DD201462A1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1474811A4 (en) * | 2002-02-11 | 2005-04-06 | Nikko Materials Usa Inc | MORDAN AGE SOLUTION TO FORM AN ENOUGH RESISTANCE |
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