CN2886808Y - N type silicon solar battery - Google Patents
N type silicon solar battery Download PDFInfo
- Publication number
- CN2886808Y CN2886808Y CNU2006200688099U CN200620068809U CN2886808Y CN 2886808 Y CN2886808 Y CN 2886808Y CN U2006200688099 U CNU2006200688099 U CN U2006200688099U CN 200620068809 U CN200620068809 U CN 200620068809U CN 2886808 Y CN2886808 Y CN 2886808Y
- Authority
- CN
- China
- Prior art keywords
- type
- type silicon
- silicon solar
- solar cell
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses an N type silicon solar cell with the N type straight pulled mono-crystalline silicon (CZ) the basal body of the cell. Random regular pyramid knap surface structure layer is rooted on the front of the N type straight pulled mono-crystalline silicon and metal electrode printed in silk net is arranged on the structure layer. P type radiating layer is fixed onto the back surface of the N type straight pulled mono-crystalline silicon and metal electrode printed in silk net is arranged on the radiating layer. The utility model has the advantage of that the cell has a high value of photoelectrical conversion rate.
Description
Technical field
The utility model relates to a kind of solar cell, is a kind of N type silicon solar cell specifically.
Background technology
Current in the world at present is the silicon solar cell made from method for printing screen on P type silicon chip.The high optoelectronic conversion ratio that this battery gets the nod is about 16%.The space of further improving cost performance on this basis is very limited.And the minority carrier lifetime that the P type silicon that it is found that conventional used for solar batteries is in recent years cut Crouse's pulling of crystals (CZ) material can fail under illumination.Thereby attempting seeking other performance better material, as super magnetic pulling of crystals (MCZ), mix gallium pulling of crystals or the like, but can improve the cost of solar cell like this.
Present existing N type silicon solar cell is the N type back side point contact solar cell that U.S. SunPower company produces.Its structure be electrode, contacting metal all at cell backside, interconnected for the tiny diffusion region dot matrix of realizing 10 microns at the metal and the back side prevents short circuit between the back metal again, therefore to do repeatedly photoetching, oxidation and diffusion, structure is quite complicated, and manufacture difficulty is big, the cost height.
The utility model content
Goal of the invention of the present utility model is to remedy the defective that prior art exists, and provides a kind of and provides a kind of rational in infrastructure, and manufacture craft is simple, and cost is lower, the N type silicon solar cell that optoelectronic transformation efficiency is higher.
The utility model N type silicon solar cell, with N type pulling of crystals silicon chip (CZ) is matrix, it is characterized in that: the front of N type pulling of crystals silicon chip is provided with positive at random pyramid textured structure layer, sets up the metal electrode of silk screen printing on the positive at random pyramid textured structure layer; N type pulling of crystals silicon chip the back side be provided with the P type emitter junction layer of boron diffusion preparation, on P type emitter junction layer, set up the metal electrode of silk screen printing.
The utility model N type silicon solar cell, rational in infrastructure, manufacture craft is simple, and cost is lower, and optoelectronic transformation efficiency is higher.
Description of drawings
Fig. 1 is the utility model N type silicon solar battery structure (amplification) partial schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Embodiment: as shown in Figure 1, the utility model N type silicon solar cell, with N type pulling of crystals silicon chip (CZ) is matrix 1, and the front of N type pulling of crystals silicon chip is provided with positive at random pyramid textured structure layer 2, sets up the metal electrode 3 of silk screen printing on the positive at random pyramid textured structure layer; N type pulling of crystals silicon chip the back side be provided with the P type emitter junction layer 4 of boron diffusion preparation, on P type emitter junction layer, set up the metal electrode 3 of silk screen printing.
The utility model N type silicon solar cell prepares as follows:
N type silicon chip is carried out preceding Dow Chemical preliminary treatment, the positive at random pyramid textured structure layer of corrosion; Prepare the P type emitter junction at the back side in the back side boron diffusion of N type silicon chip, the growth oxide layer; The positive PECVD deposited oxide layer of N type silicon chip, silk screen printing front, back metal electrode; Sintering metal is an electrode metalization.Thereby obtain the utility model N type silicon solar cell.
Claims (1)
1, a kind of N type silicon solar cell, with N type pulling of crystals silicon chip (CZ) is matrix (1), it is characterized in that: the front of N type pulling of crystals silicon chip is provided with positive at random pyramid textured structure layer (2), sets up the metal electrode (3) of silk screen printing on the positive at random pyramid textured structure layer; N type pulling of crystals silicon chip the back side be provided with the P type emitter junction layer (4) of boron diffusion preparation, on P type emitter junction layer, set up the metal electrode (3) of silk screen printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200688099U CN2886808Y (en) | 2006-01-24 | 2006-01-24 | N type silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200688099U CN2886808Y (en) | 2006-01-24 | 2006-01-24 | N type silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2886808Y true CN2886808Y (en) | 2007-04-04 |
Family
ID=37961894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006200688099U Expired - Fee Related CN2886808Y (en) | 2006-01-24 | 2006-01-24 | N type silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2886808Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044582A (en) * | 2009-10-10 | 2011-05-04 | 中电电气(上海)太阳能科技有限公司 | High-efficiency N-type solar cell module |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Texture structure of a crystalline silicon solar cell and preparation method thereof |
-
2006
- 2006-01-24 CN CNU2006200688099U patent/CN2886808Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044582A (en) * | 2009-10-10 | 2011-05-04 | 中电电气(上海)太阳能科技有限公司 | High-efficiency N-type solar cell module |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Texture structure of a crystalline silicon solar cell and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070404 Termination date: 20120124 |