CN2848884Y - Device having symmetrical thermal field central axis - Google Patents
Device having symmetrical thermal field central axis Download PDFInfo
- Publication number
- CN2848884Y CN2848884Y CN 200520145338 CN200520145338U CN2848884Y CN 2848884 Y CN2848884 Y CN 2848884Y CN 200520145338 CN200520145338 CN 200520145338 CN 200520145338 U CN200520145338 U CN 200520145338U CN 2848884 Y CN2848884 Y CN 2848884Y
- Authority
- CN
- China
- Prior art keywords
- thermal field
- crucible
- central axis
- inner cylinder
- central axes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 4
- 239000010439 graphite Substances 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000010937 tungsten Substances 0.000 claims abstract description 4
- 238000011109 contamination Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 8
- 239000000155 melt Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a device with symmetrical thermal field central axes, which comprises a barrel-shaped heater and a crucible which is arranged at the center of the barrel-shaped heater. The utility model is characterized in that an inner cylinder with the well symmetrical central axes is arranged between the barrel-shaped heater and the crucible. The material of the inner cylinder is high temperature material, such as graphite or tungsten, etc. which has the advantages of good heat conductivity, high temperature resistance and no pollution to growing crystals. Because of the inner cylinder with the well symmetrical central axes which is arranged between the barrel-shaped heater and the crucible, the axial symmetry of a thermal field is enhanced; the inner cylinder can be used as a secondary heating element, and an isothermal surface is formed by the inner surface of a cylinder body of the inner cylinder, so the axial symmetry in the inner cylinder is enhanced and fusants in the crucible obtain the thermal field with the well symmetrical central axes. The utility model has the advantages of simple structure and easy use; the symmetry of the central axes of the thermal field where the crystals are grown can be enhanced, and the crystal forming rate and the quality of the crystals are enhanced.
Description
Technical field
The utility model relates to the crystal technique field, belongs to a kind of thermal field device that is used for growth in melt.
Background technology
Crystalline growth in the melt, the solid material thawing that thermal field central authorities crucible is equipped with is melt, the seed crystal that will be arranged on then on the thermal field central axis descends, insert in the melt, under the appropriate condition, seed crystal and melt excellent contact, crystal is grown by the seed crystal crystal orientation, the crystal mass of growth directly is subjected to the influence of thermal field central axis symmetry degree, and the cylinder heater that uses at present, the hot system that can not satisfy the high temperature crystal of growing such as employing heat-exchanging method from melt is to a temperature axisymmetric strict demand, so the crystal of growing high-quality need improve the axial symmetry of thermal field.
Summary of the invention
The purpose of this utility model provides the symmetric device of a kind of thermal field central shaft, and it can obviously improve the central shaft symmetry of thermal field in the well heater, forms the rotational symmetry temperature field that meets the crystal growth requirement, to improve the crystalline growth quality.
For achieving the above object, the utility model is taked following design:
The symmetric device of a kind of thermal field central axis, it includes the well heater of a tubular, is provided with a crucible in the central authorities of cartridge heater, it is characterized in that: be provided with a good inner core of central axis symmetry between cartridge heater and crucible.
The material of described inner core be thermal conductivity good, high temperature resistant, to the free of contamination material of the growing crystal in the crucible.
The material of described inner core is that elevated temperature heat such as graphite or tungsten are led material.
Owing between cartridge heater and crucible, be provided with a good inner core of central axis symmetry, the thermal field that inner core external shaft symmetry is bad, during by inner core, cylinder inner surface at inner core forms an isothermal surface, makes the melt in the crucible obtain a good thermal field of central axis symmetry.
The utility model has the advantages that: simple in structure, easy to use, the central axis symmetry of crystal growth thermal field be can improve, thereby crystalline crystal forming rate and crystalline quality improved.
Description of drawings
Fig. 1 is a main TV structure synoptic diagram of the present utility model
Fig. 2 is a plan structure synoptic diagram of the present utility model
Fig. 3 looks the sectional structure synoptic diagram for master of the present utility model
Embodiment
Referring to Fig. 1, Fig. 2, shown in Figure 3: the symmetric device of a kind of thermal field central axis, it includes the well heater 1 of a tubular, make with graphite material, at the two ends, bottom electrode contact 2 is arranged, be provided with a crucible 3 at the middle part of cartridge heater 1, between cartridge heater 1 and crucible 3, be provided with a good inner core 4 of central axis symmetry.
The material of described inner core 4 be thermal conductivity good, high temperature resistant, high-temperature materials such as free of contamination graphite of the growing crystal in the crucible or tungsten are made.
Owing between cartridge heater 1 and crucible 3, be provided with a good inner core 4 of central axis symmetry, make the bad thermal field of the not too all even central axis symmetry in inner core 4 outsides, during by inner core 4, in the cylindrical shell of inner core 4, form an isothermal surface, make the melt in the crucible obtain a good thermal field of central shaft symmetry, when crystal growth, the past melt 6 interior crystalline growths all around along the crystal orientation of seed crystal 5, thus improved crystalline crystal forming rate and crystalline quality.
Claims (3)
1, the symmetric device of a kind of thermal field central axis, it includes the well heater (1) of a tubular, be provided with a crucible (3) at the middle part of cartridge heater, it is characterized in that: between cartridge heater and crucible, be equipped with a good high thermal conductance inner core of central shaft symmetry (4).
2, the symmetric device of thermal field central axis according to claim 1 is characterized in that: the material of described inner core be thermal conductivity good, high temperature resistant, to the free of contamination material of the growing crystal in the crucible.
3, the symmetric device of thermal field central axis according to claim 2 is characterized in that: the material of described inner core is graphite or tungsten high temperature thermal conducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520145338 CN2848884Y (en) | 2005-12-21 | 2005-12-21 | Device having symmetrical thermal field central axis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520145338 CN2848884Y (en) | 2005-12-21 | 2005-12-21 | Device having symmetrical thermal field central axis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2848884Y true CN2848884Y (en) | 2006-12-20 |
Family
ID=37521365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520145338 Expired - Lifetime CN2848884Y (en) | 2005-12-21 | 2005-12-21 | Device having symmetrical thermal field central axis |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2848884Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668112A (en) * | 2010-06-17 | 2012-09-12 | 富士电机株式会社 | Photoelectric conversion element manufacturing apparatus |
| CN102732971A (en) * | 2012-07-16 | 2012-10-17 | 登封市蓝天石化光伏电力装备有限公司 | Heating device for crystal growing furnace and corundum single crystal growing furnace |
| CN103703170A (en) * | 2011-06-06 | 2014-04-02 | Gtat公司 | Heater assembly for crystal growth apparatus |
-
2005
- 2005-12-21 CN CN 200520145338 patent/CN2848884Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668112A (en) * | 2010-06-17 | 2012-09-12 | 富士电机株式会社 | Photoelectric conversion element manufacturing apparatus |
| CN103703170A (en) * | 2011-06-06 | 2014-04-02 | Gtat公司 | Heater assembly for crystal growth apparatus |
| CN103703170B (en) * | 2011-06-06 | 2017-04-26 | Gtat公司 | Heater assembly for crystal growth apparatus |
| CN102732971A (en) * | 2012-07-16 | 2012-10-17 | 登封市蓝天石化光伏电力装备有限公司 | Heating device for crystal growing furnace and corundum single crystal growing furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING GUOJING INFRARED OPTICAL TECHNOLOGY CO., L Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130802 Free format text: FORMER OWNER: BEIJING GUOJING INFRARED OPTICAL TECHNOLOGY CO., LTD. Effective date: 20130802 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130802 Address after: 100088, 2, Xinjie street, Beijing Patentee after: Beijing Guojing Infrared Optical Technology Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: General Research Institute for Nonferrous Metals Patentee before: Beijing Guojing Infrared Optical Technology Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20061220 |
|
| EXPY | Termination of patent right or utility model |