CN2775071Y - Large area zinc oxide transparent conductive film reactor of metal organic chemical vapour phase deposition - Google Patents

Abstract

The utility model relates to a preparation equipment for a zinc oxide transparent conductive film, in particular to a reactor for preparing a zinc oxide transparent conductive film by metal organic chemical vapor deposition (MOCVD), so as to realize large-area uniformity of the zinc oxide transparent conductive film . Various zinc oxide transparent conductive films prepared by MOCVD have the advantages of no bombardment and low substrate temperature (~ 150°C), especially suitable for low-temperature thin-film solar cell applications, and play an important role in improving cell efficiency. The technical scheme of the present utility model: the reactor for preparing zinc oxide transparent conductive film with this metal is to install heating wire, uniform heat plate, diethyl zinc and borane cloth air pipe, water cloth air pipe, etc. in a cylindrical reaction chamber , which is characterized in that: diethyl zinc and borane cloth trachea are comb-shaped, comb-shaped branch pipes are covered with micropores, and water-distribution trachea are in a cross shape. The beneficial effect of the invention is that the structure of the reactor is simple, the cost is low, and the non-uniformity of the film is less than 5% within the range of the 20cm×20cm substrate without rotation.

Description

Metal-Organic Chemical Vapor Deposition Large Area Zinc Oxide Transparent Conductive Film Reactor

technical field

The utility model relates to a preparation equipment for a zinc oxide transparent conductive film, in particular to a reactor for preparing a zinc oxide transparent conductive film by metal organic chemical vapor deposition (MOCVD), so as to realize large-area uniformity of the zinc oxide transparent conductive film .

Background technique

Zinc oxide transparent conductive film has important applications in thin film solar cells, light-emitting devices, and optoelectronic integration. The preparation of zinc oxide transparent conductive film by MOCVD has the advantages of no bombardment and low substrate temperature (~150°C), and is especially suitable for low-temperature thin films. Solar cell applications play an important role in improving cell efficiency. In addition, the MOCVD method can directly grow the textured ZnO transparent conductive film, which eliminates the pollution caused by the acid corrosion process that forms the textured surface in the sputtering method. The textured ZnO transparent conductive film can trap light in thin film solar cells, increase the light absorption of the absorbing layer, and have a significant effect on increasing the current density. The existing technology is mainly used for small-area material research in the laboratory, with a maximum area of 10cm*10cm. The reactor design is shown in Figure 1.

Contents of the invention

The principle of preparing ZnO transparent conductive film by MOCVD method is: water reacts with diethyl zinc (DEZ) to generate ZnO and water. The specific chemical reaction process is as follows:

1) Water molecules are first adsorbed on the substrate to form a reaction center

2) Diethylzinc molecules are also adsorbed on the substrate to form a reaction center

3) Diethyl zinc molecules react with water molecules to form zinc dihydroxide

            

4) Zinc dihydroxide decomposes into water and zinc oxide, water evaporates away from the substrate, and zinc oxide stays on the substrate to form a film

            

Technical scheme of the present utility model: this metal organic chemical vapor deposition method prepares the reactor of large-area zinc oxide transparent conductive film, and it is a cylindrical reaction chamber, and in the cylindrical reaction chamber, the heating wire is arranged on a fixed plate, Close to the heating wire is the uniform heat plate, and the substrate is closely attached to the uniform heat plate; parallel to the substrate, the diethyl zinc cloth air pipe and the water cloth air pipe are arranged in sequence; the distance between the uniform heat plate and the heating wire, the substrate and the two The distance between the ethyl zinc cloth air pipes, the distance between the diethyl zinc cloth air pipes and the water cloth air pipes can be adjusted; the substrate rotation axis is inserted from the middle of one side of the reactor, passed through the heating wire fixing plate and the heating wire, and then fixed vertically At the center of the uniform heat plate; an air outlet is arranged behind the heating wire fixing plate; an observation window is arranged on the side of the reaction chamber corresponding to the substrate surface; its characteristic is that diethylzinc and borane enter the two through the air inlet. Ethyl zinc and borane gas mixing pipes enter the 6 diethyl zinc air distribution pipes respectively, and then spray out from the jet holes on them, and mix and react with the water ejected from the water air distribution pipe. The relative positions of the diethyl zinc cloth air pipe and the water cloth air pipe can be adjusted when the air port enters.

The beneficial effects of the utility model: the reactor has simple structure and low cost, and the non-uniformity of the film is less than 5% within the range of the 20cm*20cm substrate without rotation.

Description of drawings

Figure 1: Schematic diagram of the reactor structure of Tokyo Institute of Technology, Japan

Figure 2: Reactor structure diagram of the utility model

Figure 3: Schematic diagram of the utility model reactor structure

Figure 4: Schematic diagram of diethyl zinc cloth gas pipe

Figure 5: Schematic diagram of water cloth trachea

In the figure: 1. Water inlet 2. Water cloth air pipe 3. Diethyl zinc and borane air inlet 4. Diethyl zinc cloth air pipe 5. Substrate 6. Even heat plate 7. Heating wire 8. Outlet Gas port 9, cavity 10, observation window 11, heating wire fixing plate 12, substrate rotation shaft 13, diethyl zinc and borane gas mixing pipe 14, diethyl zinc gas distribution pipe 15, jet hole 16, water gas distribution 17. Nozzle

Detailed ways

Below in conjunction with accompanying drawing, the structure of reactor of the present utility model is described in detail:

This metal-organic chemical vapor deposition method prepares a large-area zinc oxide (ZnO) transparent conductive film reactor, which is in a cylindrical reaction chamber 9, and the heating wire 7 is arranged on a fixed plate 11, close to the heating wire. The uniform heating plate 6 and the substrate 5 are closely attached to the uniform heating plate; the diethyl zinc cloth gas pipe 4 and the water distribution gas pipe 2 are arranged in sequence parallel to the substrate; the distance between the uniform heating plate and the heating wire, the distance between the substrate and the diethyl zinc The distance between the base zinc cloth air pipes, the distance between the diethyl zinc cloth air pipes and the water cloth air pipes can be adjusted; the substrate rotation axis 12 is inserted from the middle of one side of the reactor, passes through the heating wire fixing plate and the heating wire, and then fixed vertically At the center of the uniform heat plate; an air outlet 8 is arranged behind the heating wire fixing plate; an observation window 10 is arranged on the side of the reaction chamber corresponding to the substrate surface; its characteristic is that diethylzinc and borane flow from the air inlet 3 enter the gas mixing pipe 13 of diethyl zinc and borane, then enter 6 diethyl zinc gas distribution pipes 14 respectively, and then spray out from the gas injection holes 15 on it, and mix with the water ejected from the water distribution gas distribution pipe 16, Reaction, water enters from the water inlet 1, and the relative positions of the diethyl zinc cloth air pipe and the water cloth air pipe are adjustable.

The diethyl zinc cloth air pipe is comb-shaped, and the diethyl zinc air cloth branch pipes 14 on it are parallel to each other, and the air jet holes are punched on the pipe, vertical to the diethyl zinc and borane gas mixing pipe, and the diethyl zinc and borane gas mixing pipes are vertical. The diameter of the trachea is larger, and the diameter of the diethyl zinc gas distribution branch pipe 14 is smaller, and the gas is ejected from the jet holes on the gas distribution branch pipe to ensure sufficient mixing of diethyl zinc and borane gas and uniform distribution in space.

The water and gas distribution pipe is cross-shaped, and the four nozzles 17 are located at the 1/4 diagonal of the diethyl zinc gas distribution pipe to ensure the uniformity of water and gas spatial distribution and the uniform reaction with diethyl zinc.

In the reactor, the gas distribution pipe of diethylzinc (DEZ) is comb-shaped, and the gas injection holes are punched on the pipe to spray out DEZ, as shown in Figure 4.

In the reactor, the H ₂ O gas distribution pipe is in the shape of a cross, as shown in Figure 5 . The tubes are arranged in the diagonal direction of the substrate, and the nozzle is located at 1/4 of the diagonal of the substrate. The assembly position of H ₂ O and DEZ gas distribution pipes is shown in Figure 2

As designed above, H ₂ O and DEZ are evenly distributed in the cavity, so a large-area uniform ZnO transparent conductive film is obtained. The thickness non-uniformity of the ZnO transparent conductive film is less than 5% in the range of 20×20 cm ² .

The actual process is: H ₂ O and DEZ are respectively carried by argon (Ar) gas into the low-vacuum reaction chamber, and a chemical reaction occurs after the two meet in the chamber, and the generated ZnO is deposited on the heated substrate.

Claims (3)

1. A metal organic chemical vapor deposition large area zinc oxide transparent conductive film reactor is characterized in that: the device is a cylindrical reaction chamber, in the cylindrical reaction chamber (9), a heating wire (7) is arranged on a fixed flat plate (11), a uniform heating plate (6) is arranged close to the heating wire, and a substrate (5) is tightly attached to the uniform heating plate; a diethyl zinc gas distribution pipe (4) and a water gas distribution pipe (2) are arranged in sequence in parallel to the substrate; a substrate rotating shaft (12) is inserted from the middle of one side of the reactor, penetrates through a heating wire fixing plate and a heating wire and is vertically fixed at the central position of the uniform heating plate; an air outlet (8) is arranged behind the heating wire fixing plate; an observation window (10) is arranged on one side of the reaction chamber corresponding to the surface of the substrate.

2. The metal organic chemical vapor deposition large area zinc oxide transparent conductive film reactor of claim 1, wherein: the diethyl zinc gas distribution pipe is comb-shaped, the diethyl zinc gas distribution branch pipes (14) on the diethyl zinc gas distribution pipe are parallel to each other, the pipe is provided with gas injection holes and is vertical to the diethyl zinc and borane gas mixing pipe, and the diameter of the diethyl zinc and borane gas mixing pipe is larger than that of the diethyl zinc gas distribution branch pipes (14).

3. The metal organic chemical vapor deposition large area zinc oxide transparent conductive film reactor of claim 1, wherein: the water gas distribution branch pipe is in a cross shape, and 4 nozzles (17) are positioned at 1/4 diagonal lines of the diethyl zinc gas distribution branch pipe.

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