CN2535926Y - Light-emitting diode packaging structure - Google Patents

Abstract

The utility model discloses a light emitting diode packaging structure, which is composed of a crystal grain 41 with a unit photoelectric element 5 and a glass substrate 6, wherein, a pair of metal soldering sheets 7 is arranged on one end surface of the glass substrate 6, the metal soldering sheet 7 is provided with an inner lead metal soldering sheet part 71 and an outer lead metal soldering sheet part 72, the two metal soldering sheets are arranged oppositely by the inner lead metal soldering sheet part 71, a metal lug 17 is welded on the inner lead metal soldering sheet part 71, the crystal grain 41 is covered on the metal lug 17, the combined structure of the metal soldering sheet 7, the metal lug 17 and the crystal grain 41 is covered by an insulator 9, and the outer lead metal soldering sheet part 72 is exposed outside, the thickness of the crystal grain 41 of the utility model is 0.05-0.1 mm, and the thickness of the glass substrate 6 is about 0.3mm or thinner, therefore, the whole packaging structure has small volume, when being pasted on a mother board, the space between the light emitting diodes S is very small, about 0.5mm, the number of the light emitting diodes S per unit area on the mother substrate is relatively increased, and the resolution of the developed image is improved.

Description

Light-emitting diode packaging structure

technical field

The utility model relates to an electronic component, in particular to a light emitting diode packaging structure.

Background technique

At present, optoelectronic components have been widely used in various screen displays, indicators or other display devices, among which are closely related to people's lives, such as computer motherboards, light-emitting diode displays (LED), mobile phone display boards, power supply displays, etc. Both; as far as the industry manufactures optoelectronic components, there are two commonly used methods, but both of them must rely on the combination of the chip and the printed circuit board body to form a single optical component, and then stick it to the system motherboard circuit board with SMT; The manufacturing unit needs to be equipped with a diode chip 1 and a printed circuit board 2. The size of the die 11 is preset on the diode chip 1, and the die unit substrate 21 is also set on the printed circuit board 2, and the metal wire 22 is preset. , as shown in Figure 3, Figure 4, and Figure 5, the manufacturing process of its photoelectric element is:

The first step: testing, testing each single crystal grain 11 on the diode chip 1, if there is a defect, mark 12 with red ink or other methods, as shown in Figure 1;

The second step: fixation of the single crystal grain, and then cut the diode chip 1 into single crystal grains 11, and apply conductive silver glue 13 on each crystal grain substrate 21 on the printed circuit board body 2, as shown in Fig. 2 and Fig. 3, the crystal grain 11 is adhered on the unit substrate 21 by the conductive silver glue 13;

The third step: crystal bonding, after placing the crystal grains 11 of the entire printed circuit board body 2, put them into an oven to bake, generally at 130°C-150°C, so as to completely fix the conductive silver glue 13 and the crystal grains 11;

The fourth step: wire bonding, as shown in Figure 4, using a wire, such as a gold wire 14 from the electrode 15 leads to the internal metal wire 22 on the printed circuit board body 2;

The fifth step: glue sealing, as shown in FIG. 5 , use transparent glue 16 to cover each crystal grain 11 on the printed circuit board 2 by molding process;

The sixth step: cutting, cutting each packaged die 11 located on the printed circuit board 2;

The seventh step: test the packaging for the second time to avoid possible defects in the above steps, and then test again, and put the good products into the finishing tray for the manufacturer to use.

When in use, it is adhered to the preset tin point 31 on the mother board 3 of the system by SMT, as shown in Figure 6, the light-emitting diode S made in this way includes a unit substrate 21, a crystal grain 11, a transparent colloid 16. Therefore, not only is the volume large, but also the number of light-emitting diodes S placed per unit area of the motherboard 3 is limited, resulting in that the imaging resolution cannot be improved, and its manufacturing process is also troublesome.

As shown in Fig. 7, Fig. 8, Fig. 9, and Fig. 10, it is another kind of manufacturing process, which also has a chip 1 and a printed circuit board body 2. At first, soldering metal bumps 17 are provided on each crystal grain 11, As the intermediary between the flip chip and the printed circuit board (PCB) body 2, the chip 1 is then electrically tested, and the defective products are marked 12 with red ink, or the location of the defective products is recorded in the memory of the test bench, In order to automatically eliminate defective products in subsequent actions, the good products are fixed on the printed circuit board body 2 with the die 11 inverted, as shown in Figure 8, and then packaged with molded thermosetting transparent glue, as shown in Figure 9, and finally It is to cut into a single light emitting diode S, as shown in FIG. 10 . The light-emitting diode S produced by this process is also quite large in volume, as shown in Figure 10, its width W is about 2 mm, and its height Z is about 1.2 mm, while the distance X between the light-emitting diodes S is greater than 2 mm. It can be seen that, The number of light-emitting diodes S arranged on a certain area of the motherboard 3 cannot be increased, and its resolution cannot be effectively improved. It is not difficult to know from the above-mentioned manufacturing process that its height mainly includes the thickness of the chip 1 and the printed circuit board body 2. due to.

Utility model content

The utility model aims to solve the problem that the existing light-emitting diode packaging structure has a large volume and low resolution when used on the motherboard, and provides a small volume that can make the resolution of the image high when used on the motherboard. LED packaging structure.

The utility model comprises a crystal grain with a metal unit photoelectric element and a glass substrate, wherein a pair of metal soldering pieces are arranged on one end surface of the glass substrate, and the metal welding pieces have an inner metal welding piece part and an outer metal welding piece part, The two metal soldering pieces are arranged opposite to each other by the internal metal soldering piece, and the internal metal welding piece is welded with a metal bump, and the crystal grain is covered on the metal bump, and the combination of the metal soldering piece, the metal bump and the crystal grain The outside of the structure is covered with an insulator, and the external metal soldering piece is exposed. The thickness of the crystal grain of the utility model is 0.05-0.1mm, and the thickness of the glass substrate is about 0.3mm or thinner. Therefore, the entire packaging structure is small. , when pasted on the motherboard, the distance between the light emitting diodes is very small, about 0.5mm, so the number of light emitting diodes on the motherboard per unit area is relatively increased, so that the resolution of the image is improved.

Description of drawings

FIG. 1 is a schematic diagram of a conventional wafer.

FIG. 2 is a schematic diagram of a traditional printed circuit board body.

FIG. 3 is a schematic diagram of traditional die glue fixing on the printed circuit board body.

FIG. 4 is a schematic diagram of the wiring steps of the structure shown in FIG. 3 .

FIG. 5 is a schematic diagram of sealing steps of the structure shown in FIG. 3 .

FIG. 6 is a schematic diagram of a conventional light-emitting diode adhered to a motherboard.

FIG. 7 is a schematic diagram of another conventional method of spot-bonding metal bumps on a wafer.

FIG. 8 and FIG. 9 are schematic diagrams of the bonding and sealing steps of the light-emitting diode with the structure shown in FIG. 7 and the printed circuit board body.

FIG. 10 is a schematic diagram of the LED with the structure shown in FIG. 9 being adhered to the motherboard.

FIG. 11 is a structural schematic diagram of a flip chip and a glass substrate used in the present invention.

FIG. 12 is a schematic diagram of the steps of combining the flip chip and the glass substrate of the present invention.

FIG. 13 is a schematic view of the flip-chip wafer of the present invention after grinding.

Fig. 14 is a schematic diagram of etching steps of the present invention.

Fig. 15 is a schematic diagram of the coated insulator of the present invention.

Fig. 16 is a schematic diagram of the finished light-emitting diode of the present invention.

Fig. 17 is a schematic diagram of the light-emitting diode of the present invention adhered to the motherboard.

Detailed ways

Please refer to Fig. 16, the light-emitting diode S of the utility model includes a glass substrate 6, a crystal grain 41 with a unit photoelectric element 5, the thickness of the crystal grain 41 is about 0.05-0.1 mm, and the area is about 0.3-0.3 mm. 0.375 mm wide, in this embodiment, a pair of metal soldering pieces 7 are provided on one end surface of the glass substrate 6, and the metal welding pieces 7 are separated by a distance to form an inner metal welding piece part 71 and an outer metal welding piece part 72 The metal bumps 17 are welded on the inner metal soldering piece parts 71 of the two metal soldering pieces 7, the unit photoelectric element 5 on the crystal grain 41 is in close contact with the metal bump 17, and the metal soldering piece 7, the crystal grain 41 and the metal bump 17 are in close contact with each other. The outer layer of the block 17 is provided with an insulator 9 with a thickness of about 0.001-0.002mm, but the external metal soldering piece parts 72 of the two metal soldering pieces 7 are exposed from the insulator 9, as shown in Fig. 15 and Fig. 16 .

Please refer to shown in Fig. 17, when the utility model is used, it is adhered on the mother board 3 with SMT, and the glass substrate 6 is upwards and the tin point 31 of the lead metal soldering part 72 and the mother board 3 is welded together. The crystal grain 41 is downward, and the external lead metal soldering part 72 is located on the left and right sides, so the crystal grain 41 can be located within the height of the tin point 31, that is, it is at the same height as the tin point 31, thereby reducing the light-emitting diode S The height set on the motherboard 3, the light-emitting diode S of the present invention does not use the printed circuit board body 2, and the wafer is ground to a very thin sheet shape, which is about 0.05-0.1mm, and the glass substrate 6 used can be set at about 0.3mm Or thinner, so when sticking on the motherboard 3 with SMT, not only can shorten the distance P between the two, the distance P is about 0.5mm, and can greatly increase the layout density to improve the resolution of the image, at the same time The overall height can be reduced.

Wherein, the soldering metal bump 17 located at the inner metal soldering part 71 of the unit photoelectric element 5 and the metal soldering 7 can be directly pre-set on either side.

Therefore, the present invention can obtain the above-mentioned optical element, and its basically used unit is a flip-chip chip 4 and a glass substrate 6 with the same size, and the glass substrate 6 is provided with an array of metal soldering pieces 7, as shown in FIG. 11 , The glass substrate 6 can be etched to form the metal soldering piece 7 corresponding to the position of each unit photoelectric element 5 on the flip chip 4, and the metal welding piece 7 is formed with an internal metal soldering piece portion 71 and an external metal The packaging process of the soldering part 72 is as follows:

The first step: bonding, the flip chip 4 and the glass substrate 6 are relatively bonded, as shown in FIG. On the part 71, this can achieve the purpose of accurate fitting by automatic control;

The second step: grinding, grinding the wafer 4 to a thickness of 0.05-0.1mm, as shown in Figure 13, this step can not only save the time of the next etching step, but also reduce the height of the product;

The third step: etching, coating the photoresist liquid 8 on the wafer 4, using the method of exposure and development, as shown in Figure 14, with the method of selective etching, the etching liquid only etches the wafer 4 to the bottom layer or to the metal part, and each diode Define between, and finally wash off the photoresist liquid 8;

The fourth step: coating, vacuum evaporation or coating on a layer of insulator 9 on the metal part of the glass substrate 6, and then using photoresist solution and developing exposure method to expose the metal lead-in metal soldering part 72, As shown in Figure 15;

The fifth step: testing, electrical and optical characteristics testing and classification;

The sixth step: cutting, cutting each bonding area into a single LED S;

Wherein, the etching step can be omitted if the etching time and the height of the LED are not considered.

According to the above simple steps, a small photoelectric element can be completed, because the chip 4 has been ground to a certain thickness and there is no printed circuit board body, and the cut glass substrate 6 meets the requirements of the aforementioned metal soldering piece 7 and unit photoelectric element 5 Therefore, the number of light-emitting diodes S per unit area on the motherboard 3 can be increased, thereby improving the resolution of the screen. Since the crystal grain 41 is located between the tin points 31 of the motherboard 3, the overall combination of the motherboard 3 can be reduced. The height used in the utility model can also be applied to the packaging of general diodes or transistors.

Claims (4)

1, package structure for LED, include the crystal grain (41) of tool metallic flat photoelectric cell, it is characterized in that: also include glass substrate (6), wherein, glass substrate (6) one end faces are provided with pair of metal weld tabs (7), draw metal weld tabs portion (71) in this metal weld tabs (7) has and draw metal weld tabs portion (72) outward, two metal weld tabs (7) are oppositely arranged with the interior metal weld tabs portion of drawing, and draw in relative two to cover the crystal grain (41) with unit photoelectric cell (5) in the metal weld tabs portion (71); Metal weld tabs (7) coats with insulator (9) with the combining structure of crystal grain (41) is outer, exposes outside and draw metal weld tabs portion (72) outward.

2, according to the described package structure for LED of claim 1, it is characterized in that: in draw and be welded with metal coupling (17) in the metal weld tabs portion (71), the crystal grain (41) with unit photoelectric cell (5) covers on metal coupling (17).

3, according to the described package structure for LED of claim 1, it is characterized in that: the thickness of crystal grain (41) is 0.05～0.1mm.

4, according to the described package structure for LED of claim 1, it is characterized in that: the thickness of glass substrate (6) is 0.3mm.

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