CN2390280Y - In-line laminated amorphous silicon photocell - Google Patents
In-line laminated amorphous silicon photocell Download PDFInfo
- Publication number
- CN2390280Y CN2390280Y CN99244708U CN99244708U CN2390280Y CN 2390280 Y CN2390280 Y CN 2390280Y CN 99244708 U CN99244708 U CN 99244708U CN 99244708 U CN99244708 U CN 99244708U CN 2390280 Y CN2390280 Y CN 2390280Y
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- layer
- electrode
- back electrode
- photocell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 58
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000012528 membrane Substances 0.000 claims description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 15
- 239000002002 slurry Substances 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910004012 SiCx Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002519 antifouling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
An in-line stacked amorphous silicon photocell is composed of a glass substrate, a transparent electrode, an amorphous silicon layer and a conductive paste back electrode, as shown in figure 1. The amorphous silicon layer has P1－I1－N1/P2－I2－N2The double-junction laminated structure is characterized in that a transparent electrode is made of an ITO or tin dioxide transparent conductive film, the transparent electrode is connected with a conductive paste back electrode through a channel on an amorphous silicon layer, the back electrode is made of conductive paste on the amorphous silicon layer, the amorphous silicon double-junction laminated structure is adopted, the energy conversion efficiency of the battery is improved, the strong light performance and the stability of the battery are improved, and the conductive paste is adopted as the back electrode and has the characteristics of good appearance consistency and stable electrical performance.
Description
The utility model relates to a kind of inline lamination non-crystalline silicon photocell, belongs to photronic technical field.
Existing inline dyssophotic non-crystalline silicon photocell, its active working lining is an amorphous silicon unijunction P-I-N type structure, to sunlight or fluorescent absorption and insufficient, energy conversion efficiency is low, photronic series resistance is bigger, can only be applicable to the condition of the low light level, and under the high light condition, the light-induced degradation effect is comparatively serious.
Existing inline high light type non-crystalline silicon photocell, no matter its active working lining is the lamination amorphous silicon diode structure of unijunction or many knots, its back electrode all adopts the aluminium film.Because manufacturing process is perfect inadequately, make photronic unstable properties, and the outward appearance consistency is poor.
The purpose of this utility model is that a kind of inline lamination non-crystalline silicon photocell will be provided, and it can overcome above-mentioned shortcoming, and its conductive electrode adopts electrocondution slurry to make, and makes electric conductivity stable, and the outward appearance consistency is good; Amorphous silicon layer adopts double junction non-crystal silicon P
1-I
1-N
1/ P
2-I
2-N
2The type laminated construction, the energy conversion efficiency height, output voltage also improves, and can use under the high light condition, and the light-induced degradation effect is little, and the photocell cost is low, is easy to make.
The purpose of this utility model is achieved in that
A kind of inline lamination non-crystalline silicon photocell is characterized in that the surface sputtering deposition of transparent conductive film (2) in substrate of glass (1), covers one deck binode lamination-type amorphous silicon membrane (3) again, and back electrode (4) is covered on the amorphous silicon membrane (3).Transparency electrode has isolation channel A between (2), and isolation channel (C) is arranged between the amorphous silicon membrane (3), and the translation distance between the raceway groove (C) of transparency electrode (2) raceway groove A and amorphous silicon layer (3) is B.Raceway groove between the back electrode (4) is (E), with amorphous silicon membrane layer (3) raceway groove C at a distance of being D, form transparency electrode (2) thus, the cascaded structure of three mutual dislocation that amorphous silicon layer (3) and back electrode are (4) three layers.The fillet shape on back electrode (4) left side forms the positive electrode that battery is drawn, and the back electrode in the right constitutes the negative electrode of drawing.
Amorphous silicon membrane layer (3) is binode lamination P
1-I
1-N
1/ P
2-I
2-N
2Structure, P wherein
1P
2Be amorphous silicon carbon-coating a-SiCx:H, I
1Layer is the broad-band gap amorphous silicon layer a-Si:H that do not mix, N
1N
2Be N type a-Si:H, I
2Layer is the narrow band gap amorphous silicon germanium layer a-SiGe that do not mix
x: H (x=0-0.5.
Back electrode (4) is made as conduction carbon paste, silver slurry, copper slurry by electrocondution slurry.
The channel width of amorphous silicon membrane layer (3) is not more than 0.4mm.
Fig. 1 non-crystalline silicon photocell cutaway view;
Fig. 2 non-crystalline silicon photocell vertical view;
The cutaway view of Fig. 3 one batteries;
Fig. 4 transparency electrode schematic diagram;
The photronic amorphous silicon layer schematic diagram of Fig. 5;
Fig. 6 back electrode schematic diagram.
Now in conjunction with the accompanying drawings the structure of inline lamination-type non-crystalline silicon photocell is described in detail:
By Fig. 1,2, substrate of glass (1) is to be that the ultra-thin glass of 1.1mm is made by thickness, and its physical dimension for example is 12 * 30mm for the number sq
2Transparency electrode (2) at surface sputtering deposition one deck ITO of this substrate of glass (1) nesa coating, its thickness is 20-60nm, use the etch process method, just this layer nesa coating made transparency electrode (2), it can guarantee electric insulation between each cell electrode, utilize electric glow discharge method deposition PIN/PIN binode lamination-type amorphous silicon membrane (3) then, gross thickness is about 0.5 μ m, re-use laser and on amorphous silicon membrane (3), carve straight line transparent-channel (Fig. 1), width is 0.15mm, the back electrode of electrocondution slurry (4) is to be added on the amorphous silicon membrane (3) with the silk-screen method, back electrode (4) is covered on the raceway groove (E) of amorphous silicon membrane (5), guarantees electric insulation between the unit back electrode, form an inline lamination non-crystalline silicon photocell thus.Stamp protective paint, character at last on substrate, extraction electrode just obtains finished product.
Fig. 1 and Fig. 2 are the expression four batteries structures of series connection mutually, the back electrode of last batteries (4) is connected with the transparency electrode (2) of back one batteries, wherein the translation between the isolation channel A of transparency electrode (2) and the amorphous silicon isolation channel (C) is spaced apart B, and the translation between the isolation channel (C) of amorphous silicon (3) and the isolation channel E of back electrode (4) is spaced apart D.
By Fig. 3, each joint photocell all is transparency electrode (2) amorphous silicon (3) P
1-I
1-N
1/ P
2-I
2-N
2Binode laminated construction and back electrode (4) constitute, wherein P
1P
2Layer is a-SiCxH, x ≈ 0.50, and thickness is about 10-15nm, I
1Layer is the broad-band gap amorphous silicon a-Si:H layer that do not mix, and thickness is 80-150nm, I
2The layer narrow band gap amorphous silicon germanium a-siGex:H layer that do not mix, thickness is 200-350nm; X=0-0.50, N
1And N
2All be n type amorphous silicon a-Si:H layer, thickness is about 20-30mm, in order to realize that the tunnel between the P-I-N knot links N up and down
1And P
2The doping content of layer is up to 1%-5%.
By Fig. 4, transparency electrode (2) is to adopt ITO or electrically conducting transparent stannic oxide film to make, Fig. 4 is the figure of the non-crystalline silicon photocell transparency electrode (2) be made up of 4 element cells, it is made up of 4 rectangle nesa coatings, be that the raceway groove of A separates by width between the adjacent transparent electrode, guarantee reliable electric insulation.
By Fig. 5, amorphous silicon layer (3) evenly covers glass substrate (1) and above the transparency electrode (2), and on the position that is B, form the straight line raceway groove (C) of width less than 0.4mm in isolation channel (A) with transparency electrode (2), just form the straight line raceway groove C that misplaces with the transparency electrode isolation channel in same direction, and expose transparent conducting film (2), Fig. 5 represents the non-crystalline silicon photocell amorphous silicon film (3) be made up of 4 unit.
By Fig. 6, back electrode (4) is made by electrocondution slurry, for example conducts electricity carbon paste, electrocondution slurries such as silver slurry, copper slurry, and each unit back electrode is rectangle, and its isolation channel (E) is parallel with amorphous silicon raceway groove (C), and its spacing is D (Fig. 1).
Fig. 6 represents the back electrode (4) of the non-crystalline silicon photocell be made up of 4 unit, it has 5 back electrode pieces, the 1st the fillet shape in the left side covers transparency electrode (2) and amorphous silicon isolation channel E, form the positive electrode that photocell is drawn, 2nd, 3,4 back electrodes are bigger rectangle, equally also cover the raceway groove E of transparency electrode (2) and amorphous silicon (3), and the 5th back electrode (4) is formed on the 5th amorphous silicon film (3), on individual transparency electrode (2) figure, constitute the negative electrode that photocell is drawn.
Make photocell in this way, its transparency electrode (2) amorphous silicon (3) and back electrode (4) form three raceway groove A, C, E mutual dislocation cascaded structure, have formed the represented photocell of Fig. 1 thus.
Another embodiment, substrate of glass (1) thickness is 1.1mm still, but is of a size of 25 * 30mm
2, all the other transparency electrodes (2) amorphous silicon films (3) back electrodes (4) are no change all, also can be made into suitable photocell.
Compared with prior art, the inner coat layer non-crystalline silicon photocell has following advantages:
1, amorphous silicon layer adopts P1-I
1-N
1/P
2-I
2-N
2The binode laminated construction, the conversion efficiency height, The output voltage height is similar to 2 times of unijunction photocell voltage.
2, both be suitable for the low light level, and also be suitable for using under the high light environment, the light-induced degradation effect is little.
3, back electrode is made of electrocondution slurry, electric performance stablity, and the outward appearance uniformity is good.
4, manufacturing is simple and easy, and raw material and equipment investment expense are littler, make cost.
5, this photocell can be made up of m element cell, and m is the positive number greater than 1.
Claims (4)
1, a kind of inline lamination non-crystalline silicon photocell, it is characterized in that surface sputtering deposition of transparent conductive film (2) in substrate of glass (1), cover one deck binode lamination-type amorphous silicon membrane (3) again, back electrode (4) is covered on the amorphous silicon membrane (3), transparency electrode has isolation channel A between (2), isolation channel (C) is arranged between the amorphous silicon membrane (3), translation distance between transparency electrode (2) raceway groove A and amorphous silicon layer (3) raceway groove (C) is B, raceway groove between the back electrode (4) is (E), with amorphous silicon membrane layer (3) raceway groove C at a distance of being D, form transparency electrode (2) thus, the cascaded structure of three mutual dislocation that amorphous silicon layer (3) and back electrode are (4) three layers, the fillet shape on back electrode (4) left side forms the positive electrode that battery is drawn, and the back electrode in the right constitutes the negative electrode of drawing.
2, photocell according to claim 1 is characterized in that amorphous silicon membrane layer (3) is binode lamination P
1-I
1-N
1/ P
2-I
2-N
2Structure, P wherein
1P
2Be amorphous silicon carbon-coating a-SiCx:H, I
1Layer is the broad-band gap amorphous silicon layer a-Si:H that do not mix, N
1N
2Be N type a-Si:H, I
2Layer is the narrow band gap amorphous silicon germanium layer a-SiGe that do not mix
x: H (x=0-0.5).
3, photocell according to claim 1 is characterized in that back electrode (4) by electrocondution slurry, makes as conduction carbon paste, silver slurry, copper slurry.
4, photocell according to claim 1 is characterized in that the channel width of amorphous silicon membrane layer (3) is not more than 0.4mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99244708U CN2390280Y (en) | 1999-09-14 | 1999-09-14 | In-line laminated amorphous silicon photocell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99244708U CN2390280Y (en) | 1999-09-14 | 1999-09-14 | In-line laminated amorphous silicon photocell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2390280Y true CN2390280Y (en) | 2000-08-02 |
Family
ID=34030743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99244708U Expired - Lifetime CN2390280Y (en) | 1999-09-14 | 1999-09-14 | In-line laminated amorphous silicon photocell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2390280Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411229C (en) * | 2003-04-28 | 2008-08-13 | 株式会社大阪钛技术 | Negative electrode for lithium storage battery, lithium storage battery, film-forming material, and manufacturing method of negative electrode |
| CN103325856A (en) * | 2013-05-31 | 2013-09-25 | 深圳市圣龙特电子有限公司 | Copper electrode solar battery piece and manufacturing method thereof |
| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
-
1999
- 1999-09-14 CN CN99244708U patent/CN2390280Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411229C (en) * | 2003-04-28 | 2008-08-13 | 株式会社大阪钛技术 | Negative electrode for lithium storage battery, lithium storage battery, film-forming material, and manufacturing method of negative electrode |
| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN103325856A (en) * | 2013-05-31 | 2013-09-25 | 深圳市圣龙特电子有限公司 | Copper electrode solar battery piece and manufacturing method thereof |
| CN103325856B (en) * | 2013-05-31 | 2016-06-29 | 深圳市圣龙特电子有限公司 | A kind of copper electrode solar battery sheet and manufacture method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |