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CN2352975Y - Grating diffraction coaxial aligning device for submicron photoetching machine - Google Patents

Grating diffraction coaxial aligning device for submicron photoetching machine Download PDF

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Publication number
CN2352975Y
CN2352975Y CN 98229441 CN98229441U CN2352975Y CN 2352975 Y CN2352975 Y CN 2352975Y CN 98229441 CN98229441 CN 98229441 CN 98229441 U CN98229441 U CN 98229441U CN 2352975 Y CN2352975 Y CN 2352975Y
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China
Prior art keywords
light
diffraction
filtering
optical grating
grating diffraction
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Expired - Fee Related
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CN 98229441
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Chinese (zh)
Inventor
陈旭南
陈伟明
郭永洪
罗先刚
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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Priority to CN 98229441 priority Critical patent/CN2352975Y/en
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Publication of CN2352975Y publication Critical patent/CN2352975Y/en
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Abstract

A grating diffraction coaxial alignment device of a submicron photoetching machine belongs to the further improvement of a filtering and illuminating structure. The laser beam is made to pass through a spectroscope and horizontally incident on a small reflector and a reflecting prism connected to a filtering mechanism, and the photoetching light and the diffraction light of the grating mark of the photoetching machine are passed through filtering plates with different film systems to obtain high transmittance and complete filtering. It is convenient to install and adjust, overcomes the temperature influence, improves the alignment stability and the alignment signal quality, and improves the alignment precision and the alignment precision.

Description

Lithography machine of submicron optical grating diffraction coaxial alignment device
The utility model is a kind of lithography machine of submicron optical grating diffraction coaxial alignment device, belongs to the further improvement to filtering and light structures.Relate to the direct coaxial alignment technical field of lithography machine of submicron mask silicon chip optical grating diffraction.
Along with microelectric technique develops to high integration ultra micro refinement direction more, the microelectronic component lines are more and more thinner, require the alignment precision of photoetching Micropicture more and more higher.For lithography machine of submicron, alignment precision requires to be controlled in the 0.3 μ m (3 σ) generally speaking, and alignment precision mainly is by the alignment precision decision, and then alignment precision requires to reach 0.15 μ m (3 σ).The optical grating diffraction coaxial alignment structure that at present existing litho machine alignment system adopts has the following disadvantages:
1, aims at illumination reflector and be fixed on the object lens inwall, cause assembling to adjust difficulty, because temperature variation is brought thus and aimed at the optical axis drift, reduce the long-time stability of alignment precision on the other hand, thereby reduce the alignment precision of litho machine.
2, optical grating diffraction spatial filtering structure, its filtering film is two-way cut film, photoetching wave band and aligning wave band ± 1 order diffraction light transmission is poor, and senior diffraction light aiming at wave band also is difficult to take into account by situation, can not all reach the highest simultaneously, therefore both reduced the signal to noise ratio (S/N ratio) of registration signal, make alignment precision poor, so that alignment precision is also low, the while is poor owing to lithographic wavelength sees through, increase the photoetching time, also reduced photoetching throughput rate.
The purpose of this utility model is to avoid the deficiency of above-mentioned prior art and a kind of lithography machine of submicron optical grating diffraction coaxial alignment device is provided, to improve to quasi-stability and alignment precision, improve the transmitance of lithographic objective, satisfy the alignment of lithography machine of submicron and the needs that photoetching is produced.
The purpose of this utility model can reach by following measure: the linearly polarized light that laser instrument sends is behind spectroscope, transmission is injected the small reflector and the reflecting prism that glued joint into filtering mechanism one from the object lens outside with horizontal direction with reflection two light beams, the phase grating alignment mark W of illumination silicon chip 1And W 2, the diffraction light of generation returns in lithographic objective, be coated with the filter band of each film system by subregion after, obtain complete filtering ± 1 grade aim at diffraction light, imaging and interfering on the mask face EE of mask plate.
The purpose of this utility model can also reach by following measure: the optical grating diffraction spatial filtering mechanism of placing in the object lens, being gluedd joint by lenslet, filter band, small reflector and reflecting prism is a filtering mechanism integral body, isosceles triangle small reflector bottom surface is coated with total reflection film, its top rib is parallel with the filtering face of filter band, vertical and the filter band one side splicing of reflecting prism, and the right angle rib is parallel with small reflector top rib; The filtering face mask series of filter band is radially to be coated with the circumferencial direction subregion, and each district all is that the height that emphasizes particularly on different fields sees through and highly reflecting films; Aim at the linearly polarized light that the laser illuminator device sends, after the spectroscope beam split, transmission and reflection two light beams are with horizontal direction parallel inciding on small reflector and the reflecting prism outside the object lens.
Description of drawings:
Fig. 1 is an optical grating diffraction spatial filtering structure enlarged drawing.
Fig. 2 is the utility model structural drawing.
As shown in Figure 1: being gluedd joint by lenslet (1), filter band (2), small reflector (3) and reflecting prism (4) is a filtering mechanism integral body.Glued joint over against filter band (2) at lenslet (1) center, isosceles small reflector (3) bottom surface is coated with total reflection film, glued joint with the another side filtering face center of filter band (2) too its bottom surface, its top rib is parallel to the filtering face of filter band (2), reflecting prism (4) vertically is glued to a side of filter band (2), and the right angle rib that makes reflecting prism (4) is parallel to the top rib of small reflector (3), changes to be fixed on object lens inwall situation with catoptron originally.Filtering face mask series at filter band (2), be radially with circumferencial direction OA, AB, BC zones of different, subregion is coated with the high reflection of alignment wavelengths with emphasizing particularly on different fields respectively, the alignment wavelengths height sees through, and the high elegant system of different films with the high reflection of alignment wavelengths that sees through of lithographic wavelength, to reach 0 grade of complete elimination and senior inferior, only allow ± 1 order diffraction light passes through, reach object lens lithographic wavelength light simultaneously and see through height, photoetching is unaffected.
As shown in Figure 2: aim at linearly polarized laser that laser illuminator device (11) sends by spectroscope (12) beam splitting, transmitted beam and folded light beam are arranged in from lithographic objective (5) exterior lateral sides glancing incidence on the small reflector (3) and reflecting prism (4) of optical grating diffraction spatial filtering mechanism of object lens (5) pupil plane.Wherein transmitted beam group (8) behind condenser (13), small reflector (3) and object lens (5) goes up phase grating alignment mark W with the vertical evenly illumination silicon chip (6) of directional light 2Its folded light beam group (8) behind catoptron (10), condenser (9), reflecting prism (4), small reflector (3) and object lens (5) goes up phase grating alignment mark W with the vertical evenly illumination silicon chip (6) of directional light equally 1, W 2After evenly throwing light on, the directional light of vertical incidence produces diffraction, diffraction light returns in object lens (5) Central Plains direction, after filter band (2) filtering, 0 grade and the elimination fully of senior light quilt, behind lenslet (1), ± 1 order diffraction light is organized (14) and cutting board (15) in the lower surface mask face EE of mask plate (16) imaging before object lens, and interferes.Cutting board (15) is cut to orthogonal O light in polarization direction and e light to the light branch, and produces the shearing dislocation.The lower surface mask face EE of mask plate (16) goes up and does to have amplitude to aim at grating marker M 1, M 2, grid stroke is the printing opacity line.Grating marker W on silicon chip (6) 1Along with work stage (7) along certain scanning direction, marker image W 1' and the mask face on mask grating marker M 1Meeting occurs overlapping, interference image appearance bright entirely (or complete black), W 1And M 1Be marked on the direction of scanning and just aimed at, this moment, the work stage present position was the direct alignment coordinates of mask silicon chip position.Another direction is aimed at, and W 2And M 2Markers align with it in like manner.
The utility model is compared prior art and is had following advantage:
1, each part of space filtering mechanism of in object lens, placing: lenslet (1), filter band (2), small reflector (3) and reflecting prism (4) are mutually to glued joint the holistic filtering machine that is fixed as Structure has overcome because variations in temperature is brought the drift of aiming at optical axis, improves the length of alignment precision Time stability, thereby the alignment precision of raising litho machine.
2, owing in the filtering mechanism, adopted reflecting prism (4) as speculum, the while is little Speculum (3) has adopted non-90 ° of drift angle isosceles small reflector structures, makes two laser lighting light beams Can inject lithographic objective from horizontal direction parallel, make things convenient for the general assembly adjustment of lithographic objective, Both improve the adjustment precision, shortened again the general assembly time.
3, the filtering face mask series employing to filter band (2) radially is coated with the circumferencial direction subregion, respectively there is the emphasis of oneself transmission or reflection in each district, because at different levels diffraction light luminous points of alignment light occupy little, can effectively improve the photoetching transmitance of photoetching wave band with this filter band (2) of this method, improve complete machine photoetching production efficiency.High simultaneously ± 1 order diffraction light that sees through has improved the registration signal quality, thereby has improved alignment precision and alignment precision.

Claims (4)

1, the optical grating diffraction coaxial alignment device of lithography machine of submicron, include lithographic objective, optical grating diffraction spatial filtering mechanism, and aligning illumination, it is characterized in that linearly polarized light that laser instrument (11) sends is behind spectroscope (12), transmission and reflection two light beams are injected on small reflector (3) and the reflecting prism (4) with horizontal direction from object lens (5) outside, respectively with directional light vertical evenly the phase grating alignment mark W1 and the W2 of illumination silicon chip (6), the diffraction light that produces returns by former direction in lithographic objective (5), be coated with the filter band (2) of each film system by subregion after, obtain complete filtering ± 1 grade aim at diffraction light, go up imaging through cutting board (15) at the mask face EE of mask plate (16), and interfere.
2, lithography machine of submicron optical grating diffraction coaxial alignment loading amount as claimed in claim 1, it is characterized in that the optical grating diffraction spatial filtering mechanism of placing in the object lens, being gluedd joint by lenslet (1), filter band (2), small reflector (3) and reflecting prism (4) is a filtering mechanism integral body, small reflector (3) bottom surface is coated with total reflection film, its top rib is parallel with the filtering face of filter band (2), vertical and the filter band one side splicing of reflecting prism (4), and the right angle rib is parallel with small reflector (3) top rib.
3, lithography machine of submicron optical grating diffraction coaxial alignment device as claimed in claim 1 or 2, the filtering face mask series that it is characterized in that filter band (2) is radially to be coated with the circumferencial direction subregion, each district all is that the height that emphasizes particularly on different fields sees through or highly reflecting films.
4, lithography machine of submicron optical grating diffraction coaxial alignment device as claimed in claim 1 or 2, it is characterized in that aiming at the linearly polarized laser that laser illuminator device (11) penetrates, after spectroscope (12) beam split, transmission and reflection two light beams with horizontal direction from parallel the inciding on small reflector (3) and the reflecting prism (4) in object lens (5) outsides.
CN 98229441 1998-09-03 1998-09-03 Grating diffraction coaxial aligning device for submicron photoetching machine Expired - Fee Related CN2352975Y (en)

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Application Number Priority Date Filing Date Title
CN 98229441 CN2352975Y (en) 1998-09-03 1998-09-03 Grating diffraction coaxial aligning device for submicron photoetching machine

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Application Number Priority Date Filing Date Title
CN 98229441 CN2352975Y (en) 1998-09-03 1998-09-03 Grating diffraction coaxial aligning device for submicron photoetching machine

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CN2352975Y true CN2352975Y (en) 1999-12-08

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326204C (en) * 2003-10-17 2007-07-11 联华电子股份有限公司 Raster Alignment Method
CN1329766C (en) * 2005-06-17 2007-08-01 哈尔滨工业大学 Space aligning method of ultra-precision rotary shaft and direct writing optical axis of laser direct writing apparatus
CN1514306B (en) * 2002-12-16 2010-04-07 Asml荷兰有限公司 Lithographic apparatus, device manufacturing method and device manufactured thereby
CN1949087B (en) * 2006-11-03 2010-05-12 上海微电子装备有限公司 Aligning system of photoetching apparatus and steping combined system of said aligning system thereof
CN102096349A (en) * 2010-12-31 2011-06-15 中国科学院光电技术研究所 A dual-grating automatic alignment system for proximity nanolithography
CN104315997A (en) * 2014-11-06 2015-01-28 中国科学院光电技术研究所 Device and method for marking detection data coordinate system in plane mirror detection
CN106154765A (en) * 2015-04-23 2016-11-23 中芯国际集成电路制造(上海)有限公司 Alignment measurement apparatus
CN106154764A (en) * 2015-04-23 2016-11-23 中芯国际集成电路制造(上海)有限公司 Alignment measurement apparatus
CN110926380A (en) * 2019-12-30 2020-03-27 苏州迅镭激光科技有限公司 Method for measuring coaxiality of optical element of laser cutting head

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1514306B (en) * 2002-12-16 2010-04-07 Asml荷兰有限公司 Lithographic apparatus, device manufacturing method and device manufactured thereby
CN1326204C (en) * 2003-10-17 2007-07-11 联华电子股份有限公司 Raster Alignment Method
CN1329766C (en) * 2005-06-17 2007-08-01 哈尔滨工业大学 Space aligning method of ultra-precision rotary shaft and direct writing optical axis of laser direct writing apparatus
CN1949087B (en) * 2006-11-03 2010-05-12 上海微电子装备有限公司 Aligning system of photoetching apparatus and steping combined system of said aligning system thereof
CN102096349A (en) * 2010-12-31 2011-06-15 中国科学院光电技术研究所 A dual-grating automatic alignment system for proximity nanolithography
CN102096349B (en) * 2010-12-31 2012-05-30 中国科学院光电技术研究所 Double-grating automatic alignment system for proximity nano lithography
CN104315997A (en) * 2014-11-06 2015-01-28 中国科学院光电技术研究所 Device and method for marking detection data coordinate system in plane mirror detection
CN104315997B (en) * 2014-11-06 2017-02-15 中国科学院光电技术研究所 Device and method for marking detection data coordinate system in plane mirror detection
CN106154765A (en) * 2015-04-23 2016-11-23 中芯国际集成电路制造(上海)有限公司 Alignment measurement apparatus
CN106154764A (en) * 2015-04-23 2016-11-23 中芯国际集成电路制造(上海)有限公司 Alignment measurement apparatus
CN106154764B (en) * 2015-04-23 2018-03-30 中芯国际集成电路制造(上海)有限公司 Alignment measurement apparatus
US10042269B2 (en) 2015-04-23 2018-08-07 Semiconductor Manufacturing International (Shanghai) Corporation Apparatus and method for overlay measurement
CN106154765B (en) * 2015-04-23 2018-12-21 中芯国际集成电路制造(上海)有限公司 Alignment measuring device
CN110926380A (en) * 2019-12-30 2020-03-27 苏州迅镭激光科技有限公司 Method for measuring coaxiality of optical element of laser cutting head

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