CN223021253U - Photoelectric detection circuit and laser - Google Patents
Photoelectric detection circuit and laser Download PDFInfo
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- CN223021253U CN223021253U CN202422246866.2U CN202422246866U CN223021253U CN 223021253 U CN223021253 U CN 223021253U CN 202422246866 U CN202422246866 U CN 202422246866U CN 223021253 U CN223021253 U CN 223021253U
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Abstract
The utility model discloses a photoelectric detection circuit and a laser, wherein the photoelectric detection circuit comprises a current detection circuit, an optical path detection circuit and a controller, the current detection circuit is respectively connected with a photoelectric detection probe and the controller in the laser, the optical path detection circuit is connected with the photoelectric detection probe and the controller, the current detection circuit is used for detecting the detection current of the photoelectric detection probe and comparing the detection current with a threshold current, the current comparison result is transmitted to the controller, and the optical path detection circuit is used for collecting the output voltage detected by the photoelectric detection probe, comparing the output voltage with the threshold voltage and transmitting the voltage comparison result to the controller. The photoelectric detection circuit converts the optical signal into the voltage signal through the photoelectric detection probe, the voltage detected by the light path detection circuit is compared with the threshold voltage, the current detected by the current detection circuit is compared with the threshold current, and the controller judges the light path state according to the comparison result.
Description
Technical Field
The utility model relates to the technical field of light detection, in particular to a photoelectric detection circuit and a laser.
Background
At present, the internal light path of the picosecond Laser is a pure optical scheme, namely no light path detection exists, and as the Laser optical system is a light emitting Diode (LD) pumping source (seed source) +xenon lamp amplifying structure, in the light emitting process, the light intensities of all stages are different, wherein the seed light is weakest, the light energy amplified by the xenon lamp is strongest, but when the whole system operates, the light of each path lacks a photoelectric signal detection device, so that the light signals at all nodes cannot be collected in real time in the test process, and the state of the light path cannot be monitored.
Disclosure of utility model
The utility model mainly aims to provide a photoelectric detection circuit and a laser, which aim to solve the problem that optical signals at all nodes cannot be collected in real time, so that the state of an optical path cannot be monitored.
In order to achieve the above purpose, the photoelectric detection circuit provided by the utility model comprises a current detection circuit, an optical path detection circuit and a controller;
The current detection circuit is respectively connected with a photoelectric detection probe in the laser and the controller, and the light path detection circuit is respectively connected with the photoelectric detection probe and the controller;
the current detection circuit is used for detecting the detection current of the photoelectric detection probe, comparing the detection current with a threshold current and transmitting a current comparison result to the controller;
the optical path detection circuit is used for collecting output voltage detected by the photoelectric detection probe, comparing the output voltage with a threshold voltage and transmitting a voltage comparison result to the controller;
And the controller is used for determining the output state of the laser according to the current comparison result and the voltage comparison result.
In one embodiment, the optical path detection circuit comprises an upper limit detection circuit and a lower limit detection circuit, wherein the photoelectric detection probes comprise a first photoelectric detection probe and a second photoelectric detection probe, the first photoelectric detection probe is positioned on an optical path of light after amplification treatment, and the second photoelectric detection probe is positioned on an optical path of light without amplification treatment;
The upper limit detection circuit is respectively connected with the controller and the first photoelectric detection probe, and the lower limit detection circuit is respectively connected with the controller and the second photoelectric detection probe;
The upper limit detection circuit is used for collecting upper limit output voltage of the first photoelectric detection probe, comparing the upper limit output voltage with upper limit threshold voltage and transmitting an upper limit voltage comparison result to the controller;
The lower limit detection circuit is used for collecting the lower limit output voltage of the second photoelectric detection probe, comparing the lower limit output voltage with a lower limit threshold voltage and transmitting a lower limit voltage comparison result to the controller.
In one embodiment, the upper limit detection circuit comprises an upper limit amplifying circuit and an upper limit comparing circuit, wherein,
The upper limit amplifying circuit is respectively connected with the first photoelectric detection probe and the upper limit comparing circuit, and the upper limit comparing circuit is respectively connected with the upper limit amplifying circuit and the controller;
The upper limit amplifying circuit is used for collecting the upper limit output voltage of the second photoelectric detection probe, amplifying the upper limit output voltage to obtain upper limit amplified voltage, and transmitting the upper limit amplified voltage to the upper limit comparing circuit;
The upper limit comparison circuit is used for receiving the upper limit amplified voltage, comparing the upper limit amplified voltage with an upper limit threshold voltage and transmitting the upper limit voltage comparison result to the controller.
In one embodiment, the upper limit amplifying circuit comprises a first operational amplifier, a second operational amplifier, a first capacitor, a second capacitor, a third capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor and a first potentiometer;
The negative input end of the first operational amplifier is respectively connected with the first photoelectric detection probe, the first capacitor and the first resistor, the positive input end of the first operational amplifier is connected with the second resistor, the power supply positive electrode of the first operational amplifier is respectively connected with the third resistor and the second capacitor, the output end of the first operational amplifier is respectively connected with the other end of the first resistor, the other end of the first capacitor, the fourth resistor and the fixed pin of the first potentiometer, the other end of the fourth resistor is connected with the positive input end of the second operational amplifier and the fifth resistor, the sliding pin of the first potentiometer is connected with the third resistor, the other end of the second resistor, the other end of the third capacitor, the other fixed pin of the first potentiometer and the power supply negative electrode of the first operational amplifier are grounded, the other end of the third resistor is connected with the first power supply, the negative end of the second operational amplifier is respectively connected with the other end of the sixth resistor and the other end of the seventh operational amplifier is connected with the other end of the seventh resistor and the fifth resistor.
In one embodiment, the upper limit comparison circuit comprises an eighth resistor, a fourth capacitor, a fifth capacitor and a third operational amplifier;
One end of the eighth resistor is connected with the upper limit amplifying circuit, the other end of the eighth resistor is connected with the fourth capacitor and the positive input end of the third operational amplifier, the negative input end of the third operational amplifier is respectively connected with the fifth capacitor and the controller, the output end of the third operational amplifier is connected with the controller, and the other end of the fourth capacitor and the other end of the fifth capacitor are grounded.
In one embodiment, the lower limit detection circuit comprises a lower limit amplifying circuit and a lower limit calibration comparison circuit, wherein,
The lower limit amplifying circuit is respectively connected with the second photoelectric detection probe and the lower limit calibration comparison circuit, and the lower limit calibration comparison circuit is respectively connected with the lower limit calibration circuit and the controller;
The lower limit amplifying circuit is used for collecting the lower limit output voltage of the second photoelectric detection probe, amplifying the upper limit output voltage to obtain lower limit amplified voltage, and transmitting the lower limit amplified voltage to the lower limit calibration comparing circuit;
The lower limit calibration comparison circuit is used for receiving the lower limit amplified voltage, carrying out linear calibration on the lower limit amplified voltage to obtain a lower limit calibration voltage, comparing the lower limit calibration voltage with a lower limit threshold voltage, and transmitting the lower limit voltage comparison result to the controller.
In one embodiment, the lower limit amplifying circuit comprises a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a sixth capacitor, a seventh capacitor, an eighth capacitor, a fourth operational amplifier, a fifth operational amplifier and a second potentiometer;
The negative input end of the fourth operational amplifier is respectively connected with the second photoelectric detection probe, the fixed pin of the second potentiometer, the ninth resistor and the sixth capacitor, the positive input end of the fourth operational amplifier is connected with the tenth resistor, the positive electrode of the fourth operational amplifier is respectively connected with the eleventh resistor and the seventh capacitor, the other end of the eleventh resistor is connected with the first power supply, the output end of the fourth operational amplifier is respectively connected with the other end of the ninth resistor, the other end of the sixth resistor, the other fixed pin of the second potentiometer, the sliding pin of the second potentiometer and the twelfth resistor, the other end of the twelfth resistor is respectively connected with the positive input end of the fifth operational amplifier, the thirteenth resistor and the eighth capacitor, the other end of the seventh capacitor and the other end of the tenth resistor are grounded, the negative input end of the fifth operational amplifier is respectively connected with the other end of the fourteenth resistor and the other end of the fifteenth resistor, the other end of the thirteenth resistor is connected with the thirteenth resistor and the other end of the thirteenth resistor, and the other end of the fifteenth resistor is connected with the calibration circuit.
In one embodiment, the lower limit calibration comparison circuit comprises a sixteenth resistor, a seventeenth resistor, an eighteenth resistor, a nineteenth resistor, a ninth capacitor, a sixth operational amplifier, a third potentiometer, a twentieth resistor, a twenty first resistor, a twenty second resistor, a twenty third resistor, a seventh operational amplifier and a MOS tube;
One end of the sixteenth resistor is connected with the lower limit amplifying circuit, the other end of the sixteenth resistor is connected with the positive input ends of the ninth capacitor and the sixth operational amplifier, the negative input end of the sixth operational amplifier is connected with the sliding pin of the third potentiometer, the output end of the sixth operational amplifier is connected with the seventeenth resistor, the other end of the seventeenth resistor is connected with the eighteenth resistor and the fixed pin of the third potentiometer, the other end of the eighteenth resistor is connected with the other fixed pin of the nineteenth resistor and the third potentiometer, the other ends of the nineteenth resistor and the ninth capacitor are grounded, the twentieth resistor is connected with the positive input ends of the twenty first resistor and the seventh operational amplifier, the other end of the twenty first resistor is connected with the output end of the sixth operational amplifier, the negative input end of the seventh operational amplifier is connected with the controller, the output end of the seventh operational amplifier is connected with the twenty second resistor and the grid electrode of the third MOS transistor, the other ends of the twenty ninth resistor and the twenty MOS transistor are connected with the twenty second MOS transistor, and the twenty other ends of the twenty MOS transistor are connected with the twenty third MOS transistor and the twenty third MOS transistor.
In one embodiment, the current detection circuit comprises a twenty-fourth resistor, an eighth operational amplifier and a diode;
The second photoelectric detection probe is characterized in that the twenty-fourth resistor is connected with the positive input end of the eighth operational amplifier, the negative input end of the eighth operational amplifier is connected with the controller, the output end of the eighth operational amplifier is connected with the positive electrode of the diode, and the negative electrode of the diode is connected with the controller.
The utility model also proposes a laser comprising a photo detection circuit as described above.
The photoelectric detection circuit comprises a current detection circuit, an optical path detection circuit and a controller, wherein the current detection circuit is respectively connected with a photoelectric detection probe in a laser and the controller, the optical path detection circuit is respectively connected with the photoelectric detection probe and the controller, the current detection circuit is used for detecting detection current of the photoelectric detection probe and comparing the detection current with a threshold current and transmitting a current comparison result to the controller, the optical path detection circuit is used for collecting output voltage of the photoelectric detection probe, comparing the output voltage with the threshold voltage and transmitting a voltage comparison result to the controller, and the controller is used for determining the output state of the laser according to the current comparison result and the voltage comparison result. The photoelectric detection circuit converts an optical signal into a voltage signal through the photoelectric detection probe, the optical path detection circuit detects the voltage of the photoelectric detection probe and compares the voltage with a threshold voltage, the current detection circuit detects the current of the photoelectric detection probe and compares the current with the threshold current, and the controller combines the comparison result of the optical path detection circuit and the comparison result of the current detection circuit to judge the state of the optical path.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic block diagram of an embodiment of a photo-detection circuit according to the present utility model;
fig. 2 is a schematic structural diagram of a first embodiment of a photodetection circuit according to the present utility model;
FIG. 3 is a schematic diagram of a second embodiment of a photo detection circuit according to the present utility model;
FIG. 4 is a schematic diagram of a third embodiment of a photo-detection circuit according to the present utility model;
Fig. 5 is a schematic structural diagram of an embodiment of a photo-detection circuit provided by the present utility model.
Reference numerals illustrate:
the achievement of the objects, functional features and advantages of the present utility model will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear are referred to in the embodiments of the present utility model), the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture, and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present utility model, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, if "and/or" and/or "are used throughout, the meaning includes three parallel schemes, for example," a and/or B "including a scheme, or B scheme, or a scheme where a and B are satisfied simultaneously. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present utility model.
At present, the internal light path of the picosecond laser is a pure optical scheme, namely no light path detection exists, and because the laser optical system is an LD seed source (seed source) +xenon lamp amplifying structure, in the light emitting process, the light intensity of each stage is different, wherein the seed light (the light emitted by the seed source) is the weakest, the light energy amplified by the xenon lamp is the strongest, but when the whole system operates, the light of each path lacks a photoelectric signal detection device, so that the light signals at each node cannot be collected in real time in the test process, and the state of the light path cannot be monitored.
Because the internal light path of the laser is complex, certain difficulty is brought to light detection, and the picosecond laser is pulse laser, only the light of partial nodes in each laser needs to be collected, and the purpose of monitoring the light signals can be achieved. According to the optical structure of the currently used laser, referring to fig. 5, the path of the optical path is that light is emitted through a seed source, filtered by an isolator, amplified by a xenon lamp, and then passed through a YAG crystal to change the wavelength of the light, and reflected by a mirror to reach a treatment window. At this time, after the LD seed source, the output end of the isolator, the xenon lamp are amplified, and the positions of the reflecting mirrors are respectively provided with a Photodiode (PD) photoelectric detection probe 100, wherein the light amplified by the xenon lamp can be detected by using a large photosensitive PD, the rest positions are detected by using a small photosensitive PD, and the PD signal is amplified and transmitted to a controller (Field Programmable GATE ARRAY, FPGA) for processing through a signal acquisition board, so that when the light path of a certain point in the laser system is abnormal, the corresponding photosensitive PD can rapidly detect the light intensity at this time, and the light path abnormal point is rapidly positioned and real-time alarm is realized by comparing and judging the threshold value of the controller 400 and the upper computer, thereby improving the reliability of the laser system to a certain extent and protecting the laser and personal safety.
The utility model provides a photoelectric detection circuit.
Referring to fig. 1, in an embodiment of the present utility model, the photoelectric detection circuit includes a current detection circuit 300, an optical path detection circuit 200, and a controller 400, wherein the current detection circuit is respectively connected to a photoelectric detection probe 100 and the controller 400 in a laser, the optical path detection circuit 200 is respectively connected to the photoelectric detection probe 100 and the controller 400, the current detection circuit 300 is configured to detect a detection current of the photoelectric detection probe and compare the detection current with a threshold current, and transmit a current comparison result to the controller, the optical path detection circuit 200 is configured to collect an output voltage of the photoelectric detection probe, compare the output voltage with the threshold voltage, and transmit a voltage comparison result to the controller, and the controller 400 is configured to determine an output state of the laser according to the current comparison result and the voltage comparison result. The photoelectric detection circuit converts an optical signal into a voltage signal through the photoelectric detection probe, the optical path detection circuit detects the voltage of the photoelectric detection probe and compares the voltage with a threshold voltage, the current detection circuit detects the current of the photoelectric detection probe and compares the current with the threshold current, and the controller combines the comparison result of the optical path detection circuit and the comparison result of the current detection circuit to judge the state of the optical path.
It should be noted that, the photo-detection probe 100 is a photo-detector, the photo-detector is a PN junction with an external reverse bias, when incident light acts, stimulated absorption occurs to generate photo-generated electron-hole pairs, the electron-hole pairs form an elegant current under the action of an electric field built in the depletion layer, meanwhile, part of the electron-hole pairs at two sides of the depletion layer enter the depletion layer due to diffusion motion, and a diffusion current is formed under the action of the electric field, and the sum of the two currents is the photo-generated current. The photodetector includes a photomultiplier tube (PMT), a Photodiode (PD), an Avalanche Photodiode (APD), a silicon photomultiplier tube (MPPC/SiPM), and the like, and the photodetection probe 100 of the present application is exemplified by the Photodiode (PD).
Alternatively, the controller 400 refers to a master device that changes the wiring of a master circuit or a control circuit and changes the resistance value in the circuit in a predetermined order to control the starting, speed regulation, braking, and reversing of the motor. The computer system consists of program counter, instruction register, instruction decoder, time sequence generator and operation controller, and is a "decision mechanism" for issuing command, i.e. for completing the operation of coordinating and commanding the whole computer system. The controller 400 of the present application may be implemented by an ARM in view of cost, but has no advantage in terms of speed for a laser, and the controller 400 of the present application preferably uses an FPGA because the FPGA can process photoelectric small signals at high speed to meet the optical path detection requirements of current product applications.
The utility model relates to a light path detection circuit and a current detection circuit, which are used as judging conditions for judging whether the light path of the whole laser system normally operates, wherein the current detection circuit and the light path detection circuit form an AND gate relationship in a judging logic, namely after a certain time after the triggering of a current detection signal, if the signal of the light path detection circuit is also triggered, the current detection circuit can be used as a real photoelectric detection judgment at the moment.
In this embodiment, the photodiode PD of the photo-detection probe 100 detects an optical signal in the laser, the stronger the optical signal is, the higher the voltage of the photodiode PD is, the light signal intensity at the place where the PD photo-detection probe detects can be determined by detecting the voltage value of the PD photo-detection probe 100, the light path detection circuit 200 detects the voltage of the PD photo-detection probe as a detection voltage, the detection voltage can be compared with a threshold voltage to determine whether the detected optical signal is within the working range required by the laser, the voltage comparison result is transmitted to the controller 400, the detection current detected by the current detection circuit is compared with the threshold current and the current comparison result is transmitted to the controller 400, and the controller 400 combines the current comparison result and the voltage comparison result to determine whether the output light intensity of the LD seed source+xenon lamp amplifying structure of the laser is to be adjusted.
Fig. 2 is a circuit diagram of a first embodiment of a photodetection circuit according to an embodiment of the present utility model.
The optical path detection circuit comprises an upper limit detection circuit and a lower limit detection circuit, wherein the photoelectric detection probe 100 comprises a first photoelectric detection probe 110 and a second photoelectric detection probe 120, the first photoelectric detection probe 110 is positioned on an optical path of amplified light, the second photoelectric detection probe 120 is positioned on an optical path of non-amplified light, the upper limit detection circuit is respectively connected with a controller and the first photoelectric detection probe 110, the lower limit detection circuit is respectively connected with the controller and the second photoelectric detection probe 120, the upper limit detection circuit is used for collecting upper limit output voltage of the first photoelectric detection probe 110, comparing the upper limit output voltage with upper limit threshold voltage and transmitting an upper limit voltage comparison result to the controller, and the lower limit detection circuit is used for collecting lower limit output voltage of the second photoelectric detection probe 120, comparing the lower limit output voltage with lower limit threshold voltage and transmitting a lower limit voltage comparison result to the controller.
When the light is emitted from the seed source, the light is directly irradiated onto the photoelectric detection probe 100 without being amplified by the xenon lamp, and at this time, the corresponding voltage of the photoelectric detection probe 100 after being irradiated is relatively low. In one embodiment, the energy of the laser light before being amplified is less than 100mJ (millijoules), and the corresponding voltage after being irradiated by the photo detection probe 100 is less than or equal to 2.5V. When the light is amplified by the xenon lamp, the energy of the light can reach 20J (joule), and the corresponding voltage can reach 10V when the light irradiates the photoelectric detection probe 100. The level difference between the two is larger. Therefore, if the same optical path detection circuit is used to determine whether the voltages of the two meet the preset standard, a large error exists. Thus, when laser light of different energies is irradiated on the photo detection probe 100, different detection circuits and different types of photo detection probes are employed to determine the output states of the lasers on the corresponding optical paths. In other specific embodiments, there may be a difference between the voltages corresponding to the photoelectric detection probes before and after the optical amplification and the above embodiments, but in the same embodiment, the voltage values corresponding to the photoelectric detection probes of the same type before and after the optical amplification respectively certainly have a multiple or even more than 20 times difference.
It should be noted that, fig. 2 is an upper limit detection circuit, fig. 3 is a lower limit detection circuit, the first photoelectric detection probe 110 is a large photosensitive PD, and the second photoelectric detection probe 120 is a small photosensitive PD, where the large photosensitive PD is installed at the output end of the second and third amplification stages of the strong light node xenon lamp and the light outlet reflector, and the small photosensitive PD is installed at the output end of the weak light node laser LD seed source and the isolator output end.
It can be understood that taking the example before and after the xenon lamp amplification in the laser, the intensity of the amplified xenon lamp is very large, the large photosensitive PD needs to be placed for detection, whether the intensity of the amplified xenon lamp exceeds the intensity required by the normal operation of the laser is detected, and meanwhile, an upper limit detection circuit is connected to the large photosensitive PD, and is used for detecting whether the optical signal amplified by the optical xenon lamp is too strong.
The upper limit detection circuit comprises an upper limit amplification circuit 211 and an upper limit comparison circuit 212, wherein the upper limit amplification circuit 211 is respectively connected with the first photoelectric detection probe 110 and the upper limit comparison circuit 212, the upper limit comparison circuit 212 is respectively connected with the upper limit amplification circuit 211 and the controller 400, the upper limit amplification circuit 211 is used for collecting upper limit output voltage of the first photoelectric detection probe 110, amplifying the upper limit output voltage to obtain upper limit amplified voltage and transmitting the upper limit amplified voltage to the upper limit comparison circuit, and the upper limit comparison circuit 212 is used for receiving the upper limit amplified voltage, comparing the upper limit amplified voltage with an upper limit threshold voltage and transmitting an upper limit voltage comparison result to the controller.
It should be noted that, the voltage detected by the first photoelectric detection probe 110 is very small, and needs to be amplified, and the upper limit amplified voltage obtained after the upper limit output voltage is amplified by the upper limit amplifying circuit 211 is compared with the upper limit threshold voltage, when the upper limit amplified voltage is greater than the upper limit threshold voltage, the controller determines that the light intensity at the large photosensitive PD is too strong, and needs to adjust the optical signal output of the laser, and when the upper limit amplified voltage is less than the upper limit threshold voltage, the controller 400 determines that the light intensity at the large photosensitive PD is normal, and the large photosensitive PD continues to detect the light intensity.
The upper limit amplifying circuit 211 comprises a first operational amplifier A1, a second operational amplifier A2, a first capacitor C1, a second capacitor C2, a third capacitor C3, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and a first potentiometer B1; the negative input end of the first operational amplifier is respectively connected with the first photoelectric detection probe 110, the first capacitor and the first resistor, the positive input end of the first operational amplifier is connected with the second resistor, the power positive electrode of the first operational amplifier is respectively connected with the third resistor and the second capacitor, the output end of the first operational amplifier is respectively connected with the other end of the first resistor, the other end of the first capacitor, the fourth resistor and the fixed pin of the first potentiometer, the other end of the fourth resistor is connected with the positive input end of the second operational amplifier and the fifth resistor, the sliding pin of the first potentiometer is connected with the third resistor, the other end of the second capacitor, the other end of the third capacitor, the other fixed pin of the first potentiometer and the power negative electrode of the first operational amplifier are grounded, the other end of the third resistor is connected with the first power VCC1, the other end of the second operational amplifier is connected with the negative end of the seventh operational amplifier, the negative end of the third resistor is connected with the other end of the seventh operational amplifier is connected with the other end of the seventh resistor, and the other end of the seventh operational amplifier is connected with the other end of the seventh resistor is connected with the output end of the seventh resistor is connected with the seventh resistor.
It should be noted that, the voltage of the first power supply VCC1 is 5V, the voltage of the second power supply VCC2 is 3.3V, specific types of the first operational amplifier A1 and the second operational amplifier A2 may be set according to actual detection requirements of the circuit, pd_up is the upper limit output voltage of the first photoelectric detection probe 110, specific types of the first potentiometer B1 may be set according to actual detection requirements of the circuit, and data is stored in the EEPROM independently, so that the data is not easy to be lost.
It can be understood that pd_up is amplified by the first operational amplifier A1 to obtain a first amplified voltage up_out1, the first amplified voltage up_out1 is amplified by the second operational amplifier A2 to obtain an upper amplified voltage up_out2, up_out2= (1+r7/R6) up_out1, and the upper amplified voltage up_out2 is output to the upper limit comparison circuit 212.
The upper limit comparison circuit 212 comprises an eighth resistor R8, a fourth capacitor C4, a fifth capacitor C5 and a third operational amplifier A3, one end of the eighth resistor is connected with the upper limit amplification circuit, the other end of the eighth resistor is connected with the fourth capacitor and the positive input end of the third operational amplifier, the negative input end of the third operational amplifier is respectively connected with the fifth capacitor and the controller, the output end of the third operational amplifier is connected with the controller, and the other end of the fourth capacitor and the other end of the fifth capacitor are grounded.
Note that, set_up is an upper voltage threshold, and the upper voltage threshold set_up may be SET by a controller or may be SET by a digital-to-analog converter.
It can be understood that the third operational amplifier A3 compares the upper limit amplified voltage up_out2 with the upper limit voltage threshold set_up, and transmits the comparison result to the controller 400, when the upper limit amplified voltage up_out2 is greater than the upper limit threshold voltage set_up, the controller 400 receives a high level, the controller 400 determines that the light intensity at the large photosensitive PD is too strong and needs to adjust the light signal output of the laser, when the upper limit amplified voltage up_out2 is less than the upper limit threshold voltage set_up, the controller 400 receives a low level, the controller 400 determines that the light intensity at the large photosensitive PD is normal, and the large photosensitive PD continues to detect the light intensity.
Optionally, the resistor is used as a circuit protection element, the resistor divides the power supply voltage into different grades so as to meet the working requirements of different circuit elements, and the resistor can be replaced by iron wires and copper wires, and the capacitor is used for filtering and voltage stabilization.
In this embodiment, the first photoelectric detection probe 110 is a large photosensitive PD, the large photosensitive PD converts an optical signal into an upper limit output voltage pd_up, the upper limit output voltage pd_up collected by the upper limit amplifying circuit 211 in real time is used as an input signal of the first operational amplifier A1, the first level amplification voltage up_out1 is obtained through amplification of the first operational amplifier A1, the first level amplification voltage up_out1 is connected to an output end of the first operational amplifier A1 through the first potentiometer B1 to be regulated, data is stored in an EEPROM independently and is not easy to be lost, the first level amplification voltage up_out1 is amplified by the second operational amplifier A2 to obtain an upper limit amplification voltage up_out2, and the upper limit amplification voltage up_out2 is output to the third operational amplifier A3 to be compared with the upper limit threshold voltage set_up to be output to the controller 400.
As shown in fig. 3, a circuit structure diagram of a second embodiment of the photodetection circuit according to an embodiment of the present utility model is shown.
Based on the above-described first embodiment, a second embodiment of the photodetection circuit of the present utility model is proposed.
It can be understood that the optical path detecting circuit 200 further includes a lower limit detecting circuit, fig. 3 is a lower limit detecting circuit, the second photoelectric detecting probe 120 is a small photosensitive PD, and the small photosensitive PD is installed at the seed source output end of the low-light node laser LD and the output end of the isolator.
Taking the isolator output end as an example, the light intensity of the isolator output end inside the laser is weak, so that a small photosensitive PD needs to be placed to detect the optical signal, and the small photosensitive PD is used for checking the optical signal of the isolator output end. The small photosensitive PD is connected with the lower limit detection circuit, the small photosensitive PD converts the optical signal of the output end of the isolator into lower limit output voltage and transmits the lower limit output voltage to the lower limit detection circuit, the lower limit detection circuit is used for comparing the lower limit output voltage with the lower limit threshold voltage and transmitting a comparison result to the controller, when the lower limit output voltage is larger than the lower limit threshold voltage, the controller 400 judges that the optical signal of the output end of the isolator is normal, and when the lower limit output voltage is smaller than the lower limit threshold voltage, the controller 400 judges that the optical signal of the output end of the isolator is abnormal and too dark.
The lower limit detection circuit comprises a lower limit amplification circuit 221 and a lower limit calibration comparison circuit 222, wherein the lower limit amplification circuit 221 is respectively connected with the second photoelectric detection probe 120 and the lower limit calibration comparison circuit 222, the lower limit calibration comparison circuit is respectively connected with the lower limit calibration comparison circuit and the controller 400, the lower limit amplification circuit 221 is used for collecting lower limit output voltage of the second photoelectric detection probe 120, amplifying the upper limit output voltage to obtain lower limit amplification voltage, transmitting the lower limit amplification voltage to the lower limit calibration comparison circuit, and the lower limit calibration comparison circuit 222 is used for receiving the lower limit amplification voltage, performing linear calibration on the lower limit amplification voltage to obtain lower limit calibration voltage, comparing the lower limit calibration voltage with a lower limit threshold voltage, and transmitting the lower limit voltage comparison result to the controller.
It can be understood that the voltage of the small photo-sensitive PD of the second photoelectric detection probe 120 is very small, and needs to be amplified, and because the optical signal is too weak, the situation that the detection of the small photo-sensitive PD is inaccurate may occur, so that calibration is also needed, the lower limit amplified voltage is divided and follows as an actual voltage, and the voltage is related to the corresponding linear power and energy, that is, the lower limit calibrated voltage, and is compared with the lower limit threshold voltage according to the lower limit calibrated voltage and output to the controller 400 to determine, when the lower limit calibrated voltage is greater than the lower limit threshold voltage, the controller 400 determines that the optical signal at the output end of the isolator is normal, and when the lower limit calibrated voltage is less than the lower limit threshold voltage, the controller 400 determines that the optical signal at the output end of the isolator is abnormal.
It should be noted that, the controller 400 determines that the optical signal at the output end of the isolator is abnormal, and also needs to combine with the current detection circuit to determine whether to adjust the light source at the output end of the isolator.
The lower limit amplifying circuit comprises a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a fourth operational amplifier A4, a fifth operational amplifier A5 and a second potentiometer B2, wherein the negative input end of the fourth operational amplifier A4 is respectively connected with the fixed pin of the second photoelectric detection probe 120, the second potentiometer B2, the positive input end of the ninth resistor R9 and the sixth resistor R12, the positive input end of the fourth operational amplifier A4 is connected with the tenth resistor R10, the other end of the eleventh resistor A11 is connected with the seventh capacitor C7, the output end of the eleventh resistor R11 is respectively connected with the fixed pin of the ninth resistor A4, the other end of the fifth resistor A5 is connected with the fifth resistor B2, the other end of the fifth resistor A2 is connected with the fixed pin of the thirteenth resistor B12, the other end of the eighth resistor A2 is connected with the thirteenth resistor C14, the other end of the thirteenth resistor A4 is connected with the thirteenth resistor C7, the other end of the thirteenth resistor A4 is connected with the thirteenth resistor C12, the other end of the thirteenth resistor A4 is connected with the thirteenth resistor C7, the other end of the thirteenth resistor A is connected with the thirteenth resistor C7, the other end of the thirteenth resistor C is connected with the thirteenth resistor C12, the other end of the thirteenth resistor C is connected with the thirteenth resistor C7, the fifth resistor C is connected with the thirteenth resistor C3, the other end is connected with the thirteenth resistor C other end.
The pd_down is the lower limit output voltage of the small photosensitive PD.
It can be understood that the lower limit output voltage pd_down is amplified by the fourth operational amplifier A4 to obtain a first-stage lower limit amplified voltage out1_down, the first-stage lower limit amplified voltage out1_down is amplified by the fifth operational amplifier A5 to obtain a lower limit amplified voltage out2_down, and out2_down=out1_down (1+r15/R14), and the lower limit amplified voltage out2_down is transmitted to the lower limit calibration comparison circuit.
The lower limit calibration comparison circuit comprises a sixteenth resistor R16, a seventeenth resistor R17, an eighteenth resistor R18, a nineteenth resistor R19, a ninth capacitor C9, a sixth operational amplifier A6, a third potentiometer B3, a twentieth resistor R20, a twenty-first resistor R21, a twenty-second resistor R22, a twenty-third resistor R23, a seventh operational amplifier A7 and a MOS tube Q1; one end of the sixteenth resistor R16 is connected with the lower limit amplifying circuit, the other end of the sixteenth resistor R16 is connected with the ninth capacitor and the positive input end of the sixth operational amplifier, the negative input end of the sixth operational amplifier is connected with the sliding pin of the third potentiometer, the output end of the sixth operational amplifier is connected with the seventeenth resistor R17, the other end of the seventeenth resistor R17 is connected with the eighteenth resistor and the fixed pin of the third potentiometer, the other end of the eighteenth resistor R18 is connected with the nineteenth resistor R19 and the other fixed pin of the third potentiometer B3, the other ends of the nineteenth resistor and the ninth capacitor are grounded, the twenty-first resistor R21 and the positive input end of the seventh operational amplifier A7 are connected with the other end of the twenty-first resistor R20, the negative input end of the seventh operational amplifier A7 is connected with the controller, the twenty-first resistor R22 is connected with the other end of the twenty-first resistor A7, the twenty-second MOS transistor R22 is connected with the other end of the twenty-first resistor R2, the twenty-second MOS transistor R22 is connected with the drain electrode of the twenty-first MOS transistor R1 The source electrode of the MOS tube Q1 and the other end of the twenty-first resistor R21 are grounded.
It can be appreciated that the MOS transistor is an NMOS transistor, and SET_DOWN is the lower threshold voltage.
The lower limit amplified voltage OUT2 DOWN is divided by the sixth operational amplifier A6 and is stabilized at the lower limit calibration voltage, because the optical signal at the output end of the isolator is too weak, the lower limit output voltage detected by the small photosensitive PD is unstable, the amplified lower limit amplified voltage OUT2 DOWN is also unstable, and may be high or low, the sixth operational amplifier calibrates the lower limit amplified voltage OUT2 DOWN to the lower limit calibration voltage, the seventh operational amplifier A7 compares the lower limit calibration voltage with the lower limit threshold voltage, the seventh operational amplifier outputs a high voltage, the MOS transistor Q1 is turned on, the controller receives a low level, the controller 400 determines that the optical signal at the output end of the isolator is normal, the seventh operational amplifier A7 outputs a low voltage when the lower limit calibration voltage is less than the lower limit threshold voltage, the MOS transistor Q1 is turned off, and the controller 400 receives a high level, the controller 400 determines that the optical signal at the output end of the isolator is abnormal.
Alternatively, the lower threshold voltage SET_DOWN may be connected to the controller setting or to the digital-to-analog converter setting.
In this embodiment, the lower limit output voltage collected by the small photosensitive PD in real time is used as the input signal of the fourth operational amplifier A4, and is bridged across two ends of the fourth operational amplifier A4 through the second potentiometer B2, that is, the input and output ends are adjusted, the output of the fourth operational amplifier A4 is amplified by the fifth operational amplifier A5 at the rear stage to obtain the lower limit amplified voltage, which is used as the normal input of the sixth operational amplifier A6 at the next stage, and the inverted input voltage is set through the third potentiometer B3, so that the lower limit amplified voltage is divided and follows the actual voltage as pd_down, and the voltage is related to the corresponding linear power and energy, that is, the lower limit calibration voltage, and is compared with the lower limit voltage threshold according to the value and output to the controller 400 for judgment.
As shown in fig. 4, a circuit configuration diagram of a third embodiment of a photodetection circuit according to an embodiment of the present utility model is provided.
Based on the above-described second embodiment, a third embodiment of the photodetection circuit of the present utility model is proposed.
The current detection circuit comprises a twenty-fourth resistor R24, an eighth operational amplifier A8 and a diode Q2, wherein the twenty-fourth resistor R24 is connected with the second photoelectric detection probe 120, the other end of the twenty-fourth resistor R24 is connected with the positive input end of the eighth operational amplifier A8, the negative input end of the eighth operational amplifier is connected with the controller 400, the output end of the eighth operational amplifier A8 is connected with the positive electrode of the diode Q2, and the negative electrode of the diode Q2 is connected with the controller.
It will be appreciated that the second photodetector 120 is a small photo-detector PD, and the diode Q2 is to prevent the controller from flowing backward, and oc_set is a threshold current.
Alternatively, the threshold current oc_set is SET in connection with the digital-to-analog converter, and may also be SET by the controller.
It should be noted that, when the detected current is greater than the threshold current oc_set, the eighth operational amplifier A8 outputs a high level, and the controller determines that the optical signal received by the small photosensitive PD is normal, when the detected current is less than the threshold current oc_set, the eighth operational amplifier A8 outputs a low level, and the controller determines that the small photosensitive PD is abnormal, and after a certain time after the current detection signal is triggered, if the lower limit detection circuit signal is also triggered, the controller 400 receives a high level signal output by the lower limit detection circuit, then the controller can be used as a real photoelectric detection determination, and the controller determines that the light intensity at the output end of the isolator is too weak, so that the brightness of the LD seed source needs to be adjusted.
In this embodiment, the lower limit detection circuit is connected with the current detection circuit, and after a certain time after the current detection circuit signal is triggered, if the signal of the lower limit detection circuit is also triggered, it can be determined that the light intensity of the small photosensitive PD is too weak at this time, and the light source inside the laser needs to be adjusted. Because the light intensity of the small photosensitive PD is too weak, the small photosensitive PD can possibly generate the condition that the detection can not be carried out or the detection is wrong.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The utility model also provides a laser which comprises a photoelectric detection circuit, and the specific structure of the photoelectric detection circuit refers to the embodiment, and as the laser adopts all the technical schemes of all the embodiments, the laser at least has all the beneficial effects brought by the technical schemes of the embodiments, and the detailed description is omitted.
The foregoing description is only exemplary embodiments of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structural changes made by the description of the present utility model and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the present utility model.
Claims (10)
1. The photoelectric detection circuit is characterized by comprising a current detection circuit, an optical path detection circuit and a controller;
The current detection circuit is respectively connected with a photoelectric detection probe in the laser and the controller, and the light path detection circuit is respectively connected with the photoelectric detection probe and the controller;
the current detection circuit is used for detecting the detection current of the photoelectric detection probe, comparing the detection current with a threshold current and transmitting a current comparison result to the controller;
the optical path detection circuit is used for collecting output voltage detected by the photoelectric detection probe, comparing the output voltage with a threshold voltage and transmitting a voltage comparison result to the controller;
And the controller is used for determining the output state of the laser according to the current comparison result and the voltage comparison result.
2. The photoelectric detection circuit according to claim 1, wherein the optical path detection circuit includes an upper limit detection circuit and a lower limit detection circuit, wherein the photoelectric detection probe includes a first photoelectric detection probe and a second photoelectric detection probe, the first photoelectric detection probe is located on an optical path of light after the amplification treatment, and the second photoelectric detection probe is located on an optical path of light without the amplification treatment;
The upper limit detection circuit is respectively connected with the controller and the first photoelectric detection probe, and the lower limit detection circuit is respectively connected with the controller and the second photoelectric detection probe;
The upper limit detection circuit is used for collecting upper limit output voltage of the first photoelectric detection probe, comparing the upper limit output voltage with upper limit threshold voltage and transmitting an upper limit voltage comparison result to the controller;
The lower limit detection circuit is used for collecting the lower limit output voltage of the second photoelectric detection probe, comparing the lower limit output voltage with a lower limit threshold voltage and transmitting a lower limit voltage comparison result to the controller.
3. The photodetection circuit according to claim 2, wherein the upper limit detection circuit comprises an upper limit amplification circuit and an upper limit comparison circuit, wherein,
The upper limit amplifying circuit is respectively connected with the first photoelectric detection probe and the upper limit comparing circuit, and the upper limit comparing circuit is respectively connected with the upper limit amplifying circuit and the controller;
The upper limit amplifying circuit is used for collecting the upper limit output voltage of the first photoelectric detection probe, amplifying the upper limit output voltage to obtain upper limit amplified voltage, and transmitting the upper limit amplified voltage to the upper limit comparing circuit;
The upper limit comparison circuit is used for receiving the upper limit amplified voltage, comparing the upper limit amplified voltage with an upper limit threshold voltage and transmitting the upper limit voltage comparison result to the controller.
4. The photodetection circuit according to claim 3, wherein the upper limit amplification circuit comprises a first operational amplifier, a second operational amplifier, a first capacitor, a second capacitor, a third capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, and a first potentiometer;
The negative input end of the first operational amplifier is respectively connected with the first photoelectric detection probe, the first capacitor and the first resistor, the positive input end of the first operational amplifier is connected with the second resistor, the power supply positive electrode of the first operational amplifier is respectively connected with the third resistor and the second capacitor, the output end of the first operational amplifier is respectively connected with the other end of the first resistor, the other end of the first capacitor, the fourth resistor and the fixed pin of the first potentiometer, the other end of the fourth resistor is connected with the positive input end of the second operational amplifier and the fifth resistor, the sliding pin of the first potentiometer is connected with the third resistor, the other end of the second resistor, the other end of the third capacitor, the other fixed pin of the first potentiometer and the power supply negative electrode of the first operational amplifier are grounded, the other end of the third resistor is connected with the first power supply, the negative end of the second operational amplifier is respectively connected with the other end of the sixth resistor and the other end of the seventh operational amplifier is connected with the other end of the seventh resistor and the fifth resistor.
5. The photodetecting circuit according to claim 3, wherein the upper limit comparing circuit comprises an eighth resistor, a fourth capacitor, a fifth capacitor, and a third operational amplifier;
One end of the eighth resistor is connected with the upper limit amplifying circuit, the other end of the eighth resistor is connected with the fourth capacitor and the positive input end of the third operational amplifier, the negative input end of the third operational amplifier is respectively connected with the fifth capacitor and the controller, the output end of the third operational amplifier is connected with the controller, and the other end of the fourth capacitor and the other end of the fifth capacitor are grounded.
6. The photodetection circuit according to claim 2, wherein the lower limit detection circuit comprises a lower limit amplification circuit and a lower limit calibration comparison circuit, wherein,
The lower limit amplifying circuit is respectively connected with the second photoelectric detection probe and the lower limit calibration comparison circuit, and the lower limit calibration comparison circuit is respectively connected with the lower limit calibration comparison circuit and the controller;
The lower limit amplifying circuit is used for collecting the lower limit output voltage of the second photoelectric detection probe, amplifying the upper limit output voltage to obtain lower limit amplified voltage, and transmitting the lower limit amplified voltage to the lower limit calibration comparing circuit;
The lower limit calibration comparison circuit is used for receiving the lower limit amplified voltage, carrying out linear calibration on the lower limit amplified voltage to obtain a lower limit calibration voltage, comparing the lower limit calibration voltage with a lower limit threshold voltage, and transmitting the lower limit voltage comparison result to the controller.
7. The photodetecting circuit according to claim 6, wherein the lower limit amplifying circuit comprises a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a sixth capacitor, a seventh capacitor, an eighth capacitor, a fourth operational amplifier, a fifth operational amplifier, and a second potentiometer;
The negative input end of the fourth operational amplifier is respectively connected with the second photoelectric detection probe, the fixed pin of the second potentiometer, the ninth resistor and the sixth capacitor, the positive input end of the fourth operational amplifier is connected with the tenth resistor, the positive electrode of the fourth operational amplifier is respectively connected with the eleventh resistor and the seventh capacitor, the other end of the eleventh resistor is connected with the first power supply, the output end of the fourth operational amplifier is respectively connected with the other end of the ninth resistor, the other end of the sixth resistor, the other fixed pin of the second potentiometer, the sliding pin of the second potentiometer and the twelfth resistor, the other end of the twelfth resistor is respectively connected with the positive input end of the fifth operational amplifier, the thirteenth resistor and the eighth capacitor, the other end of the seventh capacitor and the other end of the tenth resistor are grounded, the negative input end of the fifth operational amplifier is respectively connected with the other end of the fourteenth resistor and the other end of the fifteenth resistor, the other end of the thirteenth resistor is connected with the thirteenth resistor and the other end of the thirteenth resistor, and the other end of the fifteenth resistor is connected with the calibration circuit.
8. The photodetection circuit according to claim 6, wherein the lower limit calibration comparison circuit comprises a sixteenth resistor, a seventeenth resistor, an eighteenth resistor, a nineteenth resistor, a ninth capacitor, a sixth operational amplifier, a third potentiometer, a twentieth resistor, a twenty first resistor, a twenty second resistor, a twenty third resistor, a seventh operational amplifier, and a MOS transistor;
One end of the sixteenth resistor is connected with the lower limit amplifying circuit, the other end of the sixteenth resistor is connected with the positive input ends of the ninth capacitor and the sixth operational amplifier, the negative input end of the sixth operational amplifier is connected with the sliding pin of the third potentiometer, the output end of the sixth operational amplifier is connected with the seventeenth resistor, the other end of the seventeenth resistor is connected with the eighteenth resistor and the fixed pin of the third potentiometer, the other end of the eighteenth resistor is connected with the other fixed pin of the nineteenth resistor and the third potentiometer, the other ends of the nineteenth resistor and the ninth capacitor are grounded, the twentieth resistor is connected with the positive input ends of the twenty first resistor and the seventh operational amplifier, the other end of the twenty first resistor is connected with the output end of the sixth operational amplifier, the negative input end of the seventh operational amplifier is connected with the controller, the output end of the seventh operational amplifier is connected with the twenty second resistor and the grid electrode of the third MOS transistor, the other ends of the twenty ninth resistor and the twenty MOS transistor are connected with the twenty second MOS transistor, and the twenty other ends of the twenty MOS transistor are connected with the twenty third MOS transistor and the twenty third MOS transistor.
9. The photodetecting circuit according to claim 2, wherein the current detecting circuit comprises a twenty-fourth resistor, an eighth operational amplifier, and a diode;
The twenty-fourth resistor is connected with the second photoelectric detection probe, the other end of the twenty-fourth resistor is connected with the positive input end of the eighth operational amplifier, the negative input end of the eighth operational amplifier is connected with the controller, the output end of the eighth operational amplifier is connected with the positive electrode of the diode, and the negative electrode of the diode is connected with the controller.
10. A laser, characterized in that it comprises a photodetection circuit according to any of claims 1 to 9.
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| CN202422246866.2U CN223021253U (en) | 2024-09-12 | 2024-09-12 | Photoelectric detection circuit and laser |
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| CN202422246866.2U CN223021253U (en) | 2024-09-12 | 2024-09-12 | Photoelectric detection circuit and laser |
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