CN222965296U

CN222965296U - Wafer inspection probe card

Info

Publication number: CN222965296U
Application number: CN202421634672.3U
Authority: CN
Inventors: 梅森
Original assignee: One Tech Wuxi Co ltd
Current assignee: One Tech Wuxi Co ltd
Priority date: 2024-07-11
Filing date: 2024-07-11
Publication date: 2025-06-10
Anticipated expiration: 2034-07-11

Abstract

The present application discloses a wafer detection probe card, comprising a substrate and a probe, wherein the surface of the substrate comprises an inner circular area and an outer circular area, wherein a ring-shaped soldering needle disk is provided in the middle portion of the inner circular area, wherein one end of the probe is connected to the soldering needle disk, and the other end is used to contact the wafer for detecting the wafer, wherein a plurality of connecting parts are provided in the outer circular area, wherein the connecting parts comprise independently arranged contact point 1 and contact point 2, wherein the contact point 1 and the contact point 2 are electrically connected to the soldering needle disk via a Kelvin connection method, thereby ensuring that the voltage drop on the wire is eliminated during the test, thereby improving the test accuracy.

Description

Wafer inspection probe card

Technical Field

The application relates to the technical field of semiconductor testing, in particular to a wafer detection probe card.

Background

The probe card is used for testing the wafer in industry, and the function of the probe card is to realize signal transmission between the testing instrument and the wafer, namely, one end of the probe is contacted with the contact point through a probe contact point arranged on the probe card, the other end of the probe is contacted with a metal pad on a chip to be tested, the testing instrument and related software are matched for completion, and the method for measuring the wafer through the probe card in the semiconductor industry mainly comprises a two-end measuring method.

As shown in fig. 1, the contacts in the connection part of the existing probe card are connected together and tested by adopting a two-end measurement method, but the voltage difference of the cable connected with the measurement unit accounts for the internal pressure drop of the system to cause measurement errors, which can lead to unrealistic measurement results and has a certain limitation in measuring high-precision small resistance values.

Disclosure of utility model

The application provides a wafer detection probe card, which solves the problem of measurement errors in the prior art and adopts the following technical scheme:

the wafer detection probe card comprises a substrate and a probe, wherein the surface of the substrate comprises an inner circle area and an outer circle area, a ring-shaped one-circle welding needle disc is arranged in the middle of the inner circle area, one end of the probe is connected with the welding needle disc, the other end of the probe is used for contacting with a wafer to detect the wafer, the outer circle area is provided with a plurality of connecting parts, each connecting part comprises a first contact and a second contact which are independently arranged, and the first contact and the second contact are electrically connected with the welding needle disc through a Kelvin connection method.

Preferably, the inner circle area is also provided with a plurality of connecting parts, and the connecting parts of the inner circle area comprise the contact I and the contact II which are independently arranged.

Preferably, the first contact and the second contact are connected with the soldering pin pad through a coaxial line in the substrate, and two ends of the coaxial line are grounded.

Preferably, the soldering device further comprises a grounding area, wherein the grounding area comprises a first grounding area surrounding the connecting part and a second grounding area arranged on the periphery of the soldering pin pad.

Preferably, the connecting portions are circumferentially distributed along the axis of the base plate in the inner circular region and the outer circular region.

Preferably, the coaxial line includes a first wire connecting the first contact with the bonding pad and a second wire connecting the second contact with the bonding pad.

Compared with the prior art, the application has the beneficial effects that:

The contacts in the connecting part are divided into the independent first contact and the independent second contact, so that the test by the Kelvin test method can be realized, the voltage drop on the wire can be eliminated in the test process, and the test precision is improved.

Drawings

FIG. 1 is a schematic diagram of a prior art probe card;

FIG. 2 is a schematic diagram of a probe card according to the present application;

FIG. 3 is a schematic view of a portion of the structure of a probe card of the present application;

FIG. 4 is a schematic diagram of a probe card connection of the present application;

In the figure:

1. The substrate, 5, the second grounding area, 6, the welding needle disc, 8, the probe, 9 and the coaxial line;

10. The connecting part, 30, an inner circular area, 40, an outer circular area, 50, a first grounding area, 110, a first contact, 120 and a second contact.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, and it is apparent that the described embodiments of the present application are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

Referring to fig. 2 to 4, the wafer detecting probe card further includes a substrate 1 and a probe 8, the surface of the substrate 1 includes an inner circle area 30 and an outer circle area 40, a ring-shaped circle of bonding pad 6 is disposed in the middle of the inner circle area 30, one end of the probe 8 is connected with the bonding pad 6, the other end is used for contacting a wafer to detect the wafer, the outer circle area 40 is provided with a plurality of connection parts 10, the connection parts 10 are connected with the bonding pad 6 through coaxial lines 9 in the substrate, the connection parts 10 include a first contact 110 and a second contact 120 which are independently disposed, and the first contact 110 and the second contact 120 are electrically connected with the bonding pad 6 through a kelvin connection method.

The improvement compared with the prior art is that the first contact 110 and the second contact 120 in the connecting part 10 are divided into two independent contacts, and the first contact 110 is a Force terminal (Force line) and the second contact 120 is a Sense terminal (Sense line) and is externally connected with a test board respectively, so that the voltage drop on the lead can be eliminated in the test process, and the test precision is improved.

Referring to fig. 2, the inner circular area 30 may also be provided with a plurality of connection portions 10, where the connection portions of the inner circular area and the connection portions of the outer circular area have the same structure, the connection portions of the inner circular area 30 include a contact one and a contact two that are independently arranged, the connection portions of the inner circular area 30 are located between the bonding pad 6 and the outer circular area 40, and the connection portions 10 are circumferentially distributed along the axis of the substrate 1 in the inner circular area 30 and the outer circular area 40, where the number of the connection portions 10 is not limited.

Referring to fig. 4, the coaxial line 9 of the present application includes a first wire and a second wire, the first contact 110 is connected to the bonding pad 6 through the first wire, the second contact 120 is connected to the bonding pad 6 through the second wire to connect the probe 8, and the two ends of the coaxial line 9 are grounded, specifically, the grounding area includes a first grounding area 50 and a second grounding area 5, the first grounding area 50 is disposed at the periphery of the connection portion 10, the second grounding area 5 is disposed at the periphery of the bonding pad, and the first grounding area 50 and the second grounding area 5 are both connected to a grounding connection point on the test board to prevent leakage of the probe card.

Claims

1. The wafer detection probe card comprises a substrate and a probe, wherein the surface of the substrate comprises an inner circle area and an outer circle area, a circle of circular welding needle disc is arranged in the middle of the inner circle area, one end of the probe is connected with the welding needle disc, the other end of the probe is used for contacting with a wafer to detect the wafer, and the wafer detection probe card is characterized in that the outer circle area is provided with a plurality of connecting parts, each connecting part comprises a first contact and a second contact which are independently arranged, and the first contact and the second contact are electrically connected with the welding needle disc through a Kelvin connection method.

2. The wafer inspection probe card of claim 1, wherein said inner circular area is also provided with a plurality of connection portions, said connection portions of said inner circular area including said first contact and said second contact independently disposed.

3. The wafer inspection probe card of claim 1 or 2, wherein said first contact and said second contact are connected to said bonding pad via a coaxial line in said substrate, said coaxial line being grounded at both ends.

4. The wafer inspection probe card of claim 1, further comprising a ground region including a first ground region disposed around the connection portion and a second ground region disposed around the periphery of the bonding pad.

5. The wafer inspection probe card of claim 1, wherein said connection portions are circumferentially distributed along an axis of said substrate in said inner circular region and said outer circular region.

6. The wafer inspection probe card of claim 3, wherein said coaxial line includes a first wire and a second wire, said first wire connecting said first contact with said bonding pad, said second wire connecting said second contact with said bonding pad.