CN221748193U - A three-level four-quadrant topology power module and inverter - Google Patents

Abstract

The utility model discloses a three-level four-quadrant topological power module and a frequency converter, wherein the three-level four-quadrant topological power module comprises a rectifying module, an inversion module and an absorption capacitor; the rectification module and the inversion module comprise a plurality of IGBT modules and laminated copper bars, each IGBT module is provided with a plurality of electric connection ends, and each laminated copper bar is respectively arranged on each IGBT module and electrically connects the plurality of electric connection ends; the absorption capacitor is respectively arranged on the rectifying module and the inverting module, wherein the absorption capacitor is electrically connected with the electrical connection end of each IGBT module to form a three-level topological loop, and compared with the traditional three-level topological loop connection structure of the frequency converter, the three-level topological loop current conversion loop formed by the utility model is shorter, the stray inductance in the loop is lower, the output voltage harmonic wave is reduced, and the waveform is more similar to a standard sine wave.

Description

A three-level four-quadrant topology power module and inverter

Technical Field

The utility model relates to the technical field of frequency converters, and in particular to a three-level four-quadrant topology power module and a frequency converter.

Background Art

With the continuous improvement of the degree of automation in my country's coal production, mining inverters play a good role in speed regulation performance and energy saving in the speed regulation applications of mechanical equipment such as underground mining, excavation, and transportation in coal mines, and the four major equipment such as communication, compression, discharge, and lifting on the well. The NPC (Neutral Point Clamped) three-level topology is the most widely used multi-level topology. The voltage borne by the power devices of the three-level topology is half of the voltage borne by the power devices of the traditional two-level topology, that is, when using power tubes of the same voltage level, the three-level topology can use a higher voltage level than the two-level topology. The circuit of the three-level topology structure is mainly formed by connecting IGBT modules, capacitors and other devices. The traditional inverter has a three-level topology inside. When designing the components of each module in the structure, the direct connection method of the wire is adopted. The stray inductance in the circuit is high, and the power module formed is difficult to meet the requirements of some high-level voltages. There are many limitations in practical applications.

Utility Model Content

The embodiment of the utility model provides a three-level four-quadrant topology power module, which solves the problem of high stray inductance in the three-level topology loop of the existing inverter.

In a first aspect, an embodiment of the utility model provides a three-level four-quadrant topology power module, which includes:

A rectifier module and an inverter module, each of which comprises a plurality of IGBT modules and a laminated copper busbar, each of which is provided with a plurality of electrical connection terminals, and each of which is provided on each of the IGBT modules and electrically connects the plurality of electrical connection terminals;

Absorption capacitors are respectively arranged on the rectifier module and the inverter module, wherein the absorption capacitors are electrically connected to the electrical connection end of each IGBT module to form a three-level topology structure.

In the three-level four-quadrant topology power module provided in an embodiment of the utility model, each of the IGBT modules includes multiple IGBT modules, the electrical connection end is arranged on the IGBT module, and the stacked copper busbar includes multiple stacked busbars, and the multiple stacked busbars overlap with each other and are connected to the electrical connection end.

In the three-level four-quadrant topology power module provided in an embodiment of the utility model, the multiple stacked busbars include a first busbar and a second busbar, the second busbar is stacked on top of the first busbar, the multiple electrical connection ends include a first voltage end and a second voltage end, the first busbar and the second busbar are electrically connected to the first voltage end and the second voltage end respectively.

In the three-level four-quadrant topology power module provided in an embodiment of the utility model, the stacked copper busbar also includes a third busbar, which is stacked on top of the second busbar, and the multiple electrical connection ends also include a third voltage end, and the third busbar is electrically connected to the third voltage end.

In the three-level four-quadrant topology power module provided in an embodiment of the utility model, the absorption capacitor is arranged on the side of the laminated copper busbar facing away from the IGBT module, the laminated copper busbar is provided with a through hole, the electrical connection end is exposed in the through hole, and the pin of the absorption capacitor is electrically connected to the electrical connection end after passing through the through hole.

In the three-level four-quadrant topology power module provided in an embodiment of the utility model, the three-level four-quadrant topology power module further includes a grading resistor, which is arranged on a side of the laminated copper busbar facing away from the IGBT module and is electrically connected to the laminated copper busbar.

In the three-level four-quadrant topology power module provided in the embodiment of the utility model, the number of the IGBT modules and the number of the IGBT modules are both three.

In a second aspect, an embodiment of the utility model further provides a frequency converter, which includes any one of the three-level four-quadrant topology power modules provided by the embodiments of the utility model.

In the inverter provided by an embodiment of the utility model, the inverter also includes a radiator substrate, a capacitor module, a chassis and a weak-current component, the chassis is arranged on the radiator substrate, the three-level four-quadrant topology power module is arranged on the radiator substrate and accommodated in the chassis, the capacitor module is arranged outside the chassis and is electrically connected to the three-level four-quadrant topology power module, and the weak-current component is arranged on the chassis and is electrically connected to the three-level four-quadrant topology power module.

In the inverter provided in the embodiment of the utility model, the chassis includes a box body and a cover plate, the box body is arranged on the radiator substrate, the cover plate is rotatably installed on the top of the box body to open or close the box body, and the weak current component is arranged on the cover plate.

An embodiment of the utility model provides a three-level four-quadrant topology power module and a frequency converter, the module comprising a rectifier module, an inverter module and an absorption capacitor; the rectifier module and the inverter module both comprise a plurality of IGBT modules and a laminated copper bus, each of the IGBT modules being provided with a plurality of electrical connection terminals, each of the laminated copper bus being respectively arranged on each of the IGBT modules and electrically connecting the plurality of electrical connection terminals; the absorption capacitor is respectively arranged on the rectifier module and the inverter module, wherein the absorption capacitor is electrically connected to the electrical connection terminal of each of the IGBT modules to form a three-level topology loop. In the present application, both the rectifier and inverter modules use laminated copper busbars to electrically connect multiple electrical connection ends of each IGBT module, and then the absorption capacitor is electrically connected to the electrical connection end of each IGBT module to form a three-level topology circuit with a shorter current commutation circuit. The overall structure constitutes a four-quadrant three-level topology layout structure with low stray inductance. In actual applications, the output voltage harmonics are reduced and the waveform is closer to a standard sine wave.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

FIG1 is an exploded structural diagram of a three-level four-quadrant topology power module provided by an embodiment of the utility model;

FIG2 is an enlarged view of portion A of FIG1 ;

FIG3 is an isometric diagram of a three-level four-quadrant topology power module provided by an embodiment of the utility model;

FIG4 is an exploded view of a three-level four-quadrant topology power module provided by an embodiment of the utility model;

FIG5 is a circuit diagram of a type I three-level topology structure provided by an embodiment of the utility model;

FIG6 is a schematic diagram of the structure of a frequency converter provided in an embodiment of the present utility model;

FIG7 is an isometric view of a frequency converter provided by an embodiment of the utility model;

The reference numerals in the figures are:

100. Three-level four-quadrant topology power module; 10. Radiator substrate; 11. Rectifier module; 12. Inverter module; 20. IGBT module; 201. IGBT module; 200. Electrical connection terminal; 30. Laminated copper busbar; 31. First busbar; 32. Second busbar; 33. Third busbar; 301. Through hole; 40. Absorption capacitor; 41. Equalizing resistor; 50. Chassis; 51. Box; 52. Cover; 60. Weak-current component; 601. Unit drive board; 602. Power board.

DETAILED DESCRIPTION

The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only for reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

Referring to Figures 1 to 5, and specifically to Figures 1 and 2, an embodiment of a three-level four-quadrant topology power module provided by the utility model is shown. The structure and working principle of the three-level four-quadrant topology power module are described in detail below in conjunction with the drawings of the specification. The three-level four-quadrant topology power module includes a rectifier module 11, an inverter module 12, and an absorption capacitor 40; the rectifier module 11 and the inverter module 12 both include a plurality of IGBT modules 20 and a laminated copper bus 30, each of the IGBT modules 20 is provided with a plurality of electrical connection terminals 200, each of the laminated copper bus 30 is respectively arranged on each of the IGBT modules 20 and the plurality of electrical connection terminals 200 are electrically connected; the absorption capacitor 40 is respectively arranged on the rectifier module 11 and the inverter module 12, wherein the absorption capacitor 40 is electrically connected to the electrical connection terminal 200 of each of the IGBT modules 20 to form a three-level topology loop.

In specific implementation, the three-level four-quadrant topology power module can adopt an I-type three-level topology structure. The I-type three-level topology structure circuit diagram is shown in Figure 5. T1, T2, T3, and T4 are IGBT devices, D5 and D6 are diodes, R1 is a voltage-equalizing resistor, and C1, C2, C3, C4, C5, and C6 are capacitors used to absorb the on-off voltage spikes of the IGBT device. Taking one phase as an example, one phase contains module A, module B, and module C; module A, module B, and module C each represent a two-unit IGBT module, that is, module A integrates two devices T1 and D5 in each phase; module B integrates two devices T2 and T3 in each phase; module C integrates two devices T4 and D6 in each phase. The rectifier module 11 and the inverter module 12 are power modules for rectifying and inverting current. Both the rectifier module 11 and the inverter module 12 include multiple IGBT modules 20 and laminated copper busbars 30. Each IGBT module 20 represents one phase of a three-level topology loop. Each IGBT module 20 is specifically a combination array of multiple IGBT modules. In actual design, the number of IGBT modules 201 in each IGBT module 20 can be arbitrary and can be set according to requirements. As shown in FIG5, an IGBT module 20 is composed of three IGBT modules, namely, module A, module B, and module C. The multiple electrical connection terminals 200 of the IGBT module 20 are specifically multiple connection nodes in the three-level topology loop, such as the "﹢", "﹣", "M", "01", and "02" nodes in FIG5, and the R/S/T/U/V/W nodes are output nodes. In fact, the electrical connection terminals 200 of the IGBT module 20 are not limited to the above nodes and can be set according to the requirements of device connection. The laminated copper busbar 30 is arranged on the IGBT module 20, and electrically connects the multiple electrical connection terminals 200 on the IGBT module 20. The electrical connection terminals 200 connected by the laminated copper busbar 30 specifically include the nodes where two IGBT modules 201 are connected to each other in the three-level topology loop, such as the node "M" where the A module is connected to the B module, the node "01" where the A module is connected to the C module, and the node "02" where the B module is connected to the C module in FIG5. The laminated copper busbar 30 is equivalent to replacing the wire to electrically connect the corresponding nodes in the three-level topology loop. The absorption capacitor 40 is arranged on the rectifier module and the inverter module, and is mainly used to eliminate the peak voltage caused by the on-off process of the power tube in the three-level topology loop. The absorption capacitor 40 is specifically the capacitors C1 to C6 shown in FIG5. The absorption capacitor 40 is electrically connected to the corresponding electrical connection terminal 200 of each IGBT module 20, specifically the connection node of the capacitor in the three-level topology loop, such as the "+", "-", and "M" nodes connected to the capacitors C1 to C6 in FIG5 . The laminated copper busbar 30 electrically connects the corresponding electrical connection nodes on the IGBT module 20, and the absorption capacitor 40 is connected to the corresponding electrical connection nodes on the IGBT module 20, so that a three-level topology loop is formed. The connection of the laminated copper busbar 30 shortens the current commutation loop. Compared with the connection of the wire, the stray inductance is reduced. On the whole, the absorption capacitor 40 and the rectifier module 11 together constitute a two-quadrant three-level topology structure with a shorter commutation loop. Similarly, the absorption capacitor 40 and the inverter module 12 also together constitute a two-quadrant three-level topology structure with a shorter commutation loop, forming a four-quadrant three-level topology structure power module with a shorter current commutation loop on the whole. When the power module is actually used, a higher output power level can be achieved through the four-quadrant three-level topology loop.

In this embodiment, both the rectifier and inverter modules use laminated copper busbars to electrically connect multiple electrical connection ends of each IGBT module, and then the absorption capacitor is electrically connected to the electrical connection end of each IGBT module to form a three-level topology circuit with a shorter current commutation circuit. The rectifier and inverter modules as a whole form a four-quadrant three-level topology structure layout with lower stray inductance. In actual applications, the output voltage harmonics are reduced, the waveform is closer to a standard sine wave, and the scenario prospects are broader.

In one embodiment, referring to FIG. 1 and FIG. 4 , each of the IGBT modules 20 includes a plurality of IGBT modules 201, the electrical connection end 200 is arranged on the IGBT module 201, and the laminated copper busbar 30 includes a plurality of laminated busbars, and the plurality of laminated busbars overlap each other and are connected to the electrical connection end 200. In a specific implementation, each IGBT module 20 is composed of a plurality of IGBT modules 201, and the number of IGBT modules 201 constituting each IGBT module 20 can be set according to the output power requirement. In the three-level topology circuit shown in FIG. 5 , an IGBT module 20 is composed of three IGBT modules 201, namely, module A, module B and module C. The electrical connection end 200 of the IGBT module 20 is specifically a connection node on each IGBT module, and the electrical connection end 200 on each IGBT module is mainly used to connect with other IGBT modules, power devices or input signals. Normally, the stray inductance in the three-level topology loop is mainly presented by the equivalent inductance of the conductors in the loop, such as the connecting wires, component leads, and component bodies. The presence of stray inductance will cause a higher voltage spike between the collector and emitter of the IGBT, which is easy to cause greater electromagnetic interference and even damage to the IGBT device. In this embodiment, the laminated copper busbar 30 is formed by overlapping a plurality of laminated busbars, and the side of each two mutually laminated busbars in contact is insulated, specifically, the insulating material coating is designed to isolate the electrical property. The laminated busbar is in the form of a sheet and is designed with metal copper with good conductive properties. Each laminated busbar has a certain area, and the area of the laminated busbar can be appropriately designed to be larger. Each laminated busbar is electrically connected to the corresponding voltage access terminal on the IGBT module 201, so that the IGBT modules 201 in each IGBT module 20 can be connected to form an electrical loop, and the corresponding electrical connection terminal 200 of the IGBT module 201 can also be led out to facilitate the connection of the output signal. When the three-level topology loop is working, the current in the loop is circulated and exchanged with the voltage access terminal on the IGBT module 201 through multiple overlapping laminated busbars, the current commutation loop becomes shorter, the stray inductance in the loop is reduced, and the laminated busbar has a larger current flow area, which can achieve higher output power.

Further, referring to Figures 4 and 5, the plurality of laminated busbars include a first busbar 31 and a second busbar 32, the second busbar 32 is stacked above the first busbar 31, and the plurality of electrical connection terminals 200 include a first voltage terminal and a second voltage terminal, the first busbar 31 and the second busbar 32 are electrically connected to the first voltage terminal and the second voltage terminal, respectively. In a specific implementation, the second busbar 32 overlaps the second busbar 32, the first voltage terminal mainly includes the positive bus voltage terminal (+) in the three-level topology loop, and the second voltage terminal mainly includes the midpoint voltage terminal (M) in the three-level topology loop. The first busbar 31 is electrically connected to the first voltage terminal, i.e., the positive bus voltage terminal (+), and the second busbar 32 is electrically connected to the second voltage terminal, i.e., the midpoint voltage terminal (M). In the three-level topology loop, the positive bus voltage terminal (+) and the midpoint voltage terminal (M) need to be connected to the corresponding pins of the IGBT module 201. As shown in FIG5 , the positive bus voltage terminal (+) is specifically the drain of the IGBT device T1 in the A module, and the midpoint voltage terminal (M) is specifically the anode of the diode D1 in the A module and the cathode of the diode D2 in the C module. When the three-level topology loop is working, due to the electromagnetic induction phenomenon, the current flowing in the conductor will generate a magnetic field. The magnetic field generated by the first busbar 31 loop and the magnetic field generated by the second busbar 32 loop offset each other, which reduces the stray inductance in the loop to a certain extent, and can effectively suppress the voltage spike generated by the power tube in the IGBT module 20 when it is turned off, and the performance of the inverter is effectively improved.

Further, referring to Figures 4 and 5, the plurality of laminated busbars also include a third busbar 33, the third busbar 33 is stacked above the second busbar 32, and the plurality of electrical connection terminals 200 also include a third voltage terminal, the third busbar 33 is electrically connected to the third voltage terminal. In a specific implementation, the third busbar 33 overlaps the second busbar 32, the third voltage terminal mainly includes the negative bus voltage terminal (-) in the loop, and the third busbar 33 is electrically connected to the third voltage terminal, i.e., the negative bus voltage terminal (-). As shown in Figure 5, the negative bus voltage terminal (-) is specifically the source of the IGBT device T4 in the C module. When the three-level topology loop is working normally, the magnetic field generated by the third busbar 33 loop and the magnetic field generated by the second busbar 32 loop cancel each other out, further reducing the stray inductance in the loop, effectively suppressing the voltage spike generated by the power tube in the IGBT module 20 when shutting down, and improving the performance of the inverter.

In one embodiment, referring to FIG. 4 , the absorption capacitor 40 is arranged on the side of the laminated copper busbar 30 facing away from the IGBT module 20 , and a through hole 301 is provided on the laminated copper busbar 30 , and the electrical connection end 200 is exposed in the through hole 301 , and the pin of the absorption capacitor 40 is electrically connected to the electrical connection end 200 after being passed through the through hole 301 . In a specific implementation, in order to enable the absorption capacitor 40 to better absorb the voltage spike when the IGBT device is turned off, the absorption capacitor 40 is directly connected to the corresponding electrical connection end 200 on the IGBT module 20 , and the electrical connection end 200 to which the absorption capacitor 40 is connected here is mainly the node to which the absorption capacitor 40 is connected in the three-level topology loop, such as the nodes connected at both ends of the absorption capacitors C1 to C6 shown in FIG. 5 : the positive bus voltage end (+), the negative bus voltage end (-) and the midpoint voltage end (M). A through hole 301 is opened on the laminated copper busbar 30, specifically by opening aligned through holes 301 on a plurality of laminated busbars, the specific position of the through hole 301 is determined according to the position of the voltage access point to be connected on the IGBT module 20, so that the through hole 301 on the laminated copper busbar 30 is aligned with the voltage access point to be connected on the IGBT module 20, and the pin of the absorption capacitor 40 can be directly passed through the through hole 301 on the laminated copper busbar 30 and connected to the corresponding electrical connection terminal 200 on the IGBT module 20 to achieve electrical connection, or a screw made of a conductive material can be first connected to the pin of the absorption capacitor 40, and then the screw is passed through the through hole 301 on the laminated copper busbar 30 and driven into the corresponding electrical connection terminal 200 on the IGBT module 20, so that the absorption capacitor 40 is directly connected to the corresponding electrical connection terminal 200 on the IGBT module 20, thereby reducing unnecessary current loops, suppressing the turn-off peak voltage of the IGBT to a greater extent, and protecting the safety of the IGBT device.

In one embodiment, referring to FIG. 1 , the three-level four-quadrant topology power module further includes a voltage-equalizing resistor 41, which is disposed on the side of the laminated copper busbar 30 facing away from the IGBT module 20 and is electrically connected to the laminated busbar. In a specific implementation, the voltage-equalizing resistor 41 is disposed on the side of the laminated copper busbar 30 facing away from the IGBT module 20, that is, the side of the laminated copper busbar 30 facing upward, and the pins of the voltage-equalizing resistor 41 are connected to the corresponding laminated busbar. By opening connecting through holes 301 on the laminated busbars of different layers, it is possible to connect to the laminated busbar of any layer, so that a three-level topology loop is formed. The voltage-equalizing resistor 41 is mainly used to control the stability of the output voltage of the loop to avoid the influence of input voltage fluctuations on the loop. By increasing or decreasing the resistance value of the voltage-equalizing resistor 41, the stability of the output voltage of the loop can be adjusted to reach a predetermined value.

In one embodiment, referring to FIG. 1 to FIG. 4 , the number of the IGBT modules 20 and the number of the IGBT modules 201 are both 3. In a specific implementation, the 3 IGBT modules 20 are evenly spaced along the first horizontal direction x, and each IGBT module 20 is one phase, forming a three-phase IGBT module 20. Each phase of the IGBT module 20 is composed of 3 IGBT modules 201, and the 3 IGBT modules 201 are evenly spaced along the second horizontal direction y perpendicular to the first horizontal direction x, forming a regular 3×3 array layout as a whole. The rectifier module 11 and the inverter module 12 are both 3×3 array layouts, and the layout is simple and orderly, reducing the volume of the overall module.

In one embodiment, with reference to FIG. 6 and FIG. 7 , a frequency converter is provided, which includes a three-level four-quadrant topology power module 100 and other components. The frequency converter can realize functions such as controlling the power of the motor and realizing variable speed operation of the motor through the three-level four-quadrant topology power module 100. Among them, the three-level four-quadrant topology power module 100 in this embodiment can adopt any three-level four-quadrant topology power module provided by the utility model. Since the specific structure and working principle of the three-level four-quadrant topology power module have been introduced in detail in the previous description, they will not be repeated here for the sake of brevity of the description.

Further, the frequency converter also includes a radiator substrate 10, a chassis 50, a capacitor module (not shown) and a weak current component 60, the chassis 50 is arranged on the radiator substrate 10, the three-level four-quadrant topology power module 100 is arranged on the radiator substrate 10 and is accommodated in the chassis 50, the capacitor module is arranged outside the chassis 50 and is electrically connected to the three-level four-quadrant topology power module 100, and the weak current component 60 is arranged on the chassis 50 and is electrically connected to the three-level four-quadrant topology power module 100. Specifically, the radiator substrate 10 is flat, usually designed in the form of a copper substrate or an aluminum substrate, for heat dissipation. The chassis 50 is mounted on the radiator substrate 10, and the three-level four-quadrant topology power module 100 is installed and accommodated on the radiator substrate 10 as the power module of the entire inverter, specifically the rectifier module 11 and the inverter module 12 of the three-level four-quadrant topology power module 100 are installed on the radiator substrate 10 according to the pre-selected designed layout. The capacitor module is usually composed of a plurality of cylindrical capacitors and a sheet metal kit, and a plurality of cylindrical capacitors are accommodated in the sheet metal kit. The capacitor module is independently designed outside the chassis 50 due to its large volume and is electrically connected to the three-level four-quadrant topology power module 100 in the chassis 50. The capacitor module is specifically electrically connected to the three-level four-quadrant topology power module 100 through a busbar copper bar, which is mainly used for filtering. The weak current component 60 is mounted on the chassis 50, which mainly includes some components such as a unit drive board 601 and a power board 602. The weak current component 60 is electrically connected to the three-level four-quadrant topology power module 100, which can realize the control of the inverter as a whole. The output of the rectifier module 11 of the three-level four-quadrant topology power module 100 in the chassis 50 is connected to the input of the inverter module 12. The AC power can be rectified into DC power through the rectifier module 11 and output to the inverter module 12. The inverter module 12 can invert the input DC power into AC power for output to meet actual application requirements. As a whole, the rectifier module 11 and the inverter module 12 of the inverter adopt the same three-level four-quadrant topology power module structure, and the overall performance is further improved.

Furthermore, the chassis includes a box body 51 and a cover plate 52, wherein the box body 51 is arranged on the radiator substrate 10, the cover plate 52 is rotatably mounted on the top of the box body 51 to open or close the box body 51, and the weak current component 60 is arranged on the cover plate 52. In a specific implementation, the box body 51 is fixed on the radiator substrate 10, the box body 51 is open at the top, and the cover plate 52 is connected to one side of the top of the box body 51 by a hinge or other hinge structure, so as to realize the rotation to open or close the box body 51, and facilitate maintenance. The weak current component 60 can be installed on the upper side or the lower side of the cover plate 52, and is preferably installed on the upper side of the cover plate 52, so that after the cover plate 52 closes the box body 51, the weak current component 60 is located outside the box body 51, and forms strong and weak current isolation with the power module in the box body 51, which can effectively avoid the mutual interference of strong and weak current.

The inverter in this embodiment has improved overall performance due to the adoption of the three-level four-quadrant topology power module provided by the embodiment of the utility model. It can use a higher voltage level during operation and achieve higher quality voltage and current output.

The above is only a specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the utility model, and these modifications or replacements should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims (10)

1. A three-level four-quadrant topology power module, characterized by comprising: A rectifier module and an inverter module, each of which comprises a plurality of IGBT modules and a laminated copper busbar, each of which is provided with a plurality of electrical connection terminals, and each of which is provided on each of the IGBT modules and electrically connects the plurality of electrical connection terminals; Absorption capacitors are respectively arranged on the rectifier module and the inverter module, wherein the absorption capacitor is electrically connected to the electrical connection end of each IGBT module to form a three-level topology loop. 2. The three-level four-quadrant topology power module according to claim 1 is characterized in that each of the IGBT modules includes multiple IGBT modules, the electrical connection end is arranged on the IGBT module, and the laminated copper busbar includes multiple laminated busbars, and the multiple laminated busbars overlap with each other and are connected to the electrical connection end. 3. The three-level four-quadrant topology power module according to claim 2 is characterized in that the multiple stacked busbars include a first busbar and a second busbar, the second busbar is stacked on top of the first busbar, the multiple electrical connection ends include a first voltage end and a second voltage end, and the first busbar and the second busbar are electrically connected to the first voltage end and the second voltage end respectively. 4. The three-level four-quadrant topology power module according to claim 3 is characterized in that the laminated copper busbar also includes a third busbar, the third busbar is stacked on top of the second busbar, the multiple electrical connection terminals also include a third voltage terminal, and the third busbar is electrically connected to the third voltage terminal. 5. The three-level four-quadrant topology power module according to claim 1 is characterized in that the absorption capacitor is arranged on a side of the laminated copper busbar facing away from the IGBT module, the laminated copper busbar is provided with a through hole, the electrical connection end is exposed in the through hole, and the pin of the absorption capacitor is electrically connected to the electrical connection end after passing through the through hole. 6. The three-level four-quadrant topology power module according to claim 1 is characterized in that the three-level four-quadrant topology power module also includes a voltage-equalizing resistor, which is arranged on a side of the laminated copper busbar facing away from the IGBT module and is electrically connected to the laminated copper busbar. 7 . The three-level four-quadrant topology power module according to claim 2 , wherein the number of the IGBT modules and the number of the IGBT modules are both 3. 8. A frequency converter, characterized by comprising the three-level four-quadrant topology power module according to any one of claims 1 to 7. 9. The inverter according to claim 8 is characterized in that the inverter also includes a radiator substrate, a capacitor module, a chassis and a weak current component, the chassis is arranged on the radiator substrate, the three-level four-quadrant topology power module is arranged on the radiator substrate and accommodated in the chassis, the capacitor module is arranged outside the chassis and is electrically connected to the three-level four-quadrant topology power module, and the weak current component is arranged on the chassis and is electrically connected to the three-level four-quadrant topology power module. 10. The inverter according to claim 9 is characterized in that the chassis includes a box body and a cover plate, the box body is arranged on the radiator substrate, the cover plate is rotatably installed on the top of the box body to open or close the box body, and the low-voltage component is arranged on the cover plate.