CN212905164U - S parameter measuring device - Google Patents
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- CN212905164U CN212905164U CN202022215777.3U CN202022215777U CN212905164U CN 212905164 U CN212905164 U CN 212905164U CN 202022215777 U CN202022215777 U CN 202022215777U CN 212905164 U CN212905164 U CN 212905164U
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Abstract
本实用新型实施例公开了一种S参数测量装置。该S参数测量装置包括：脉冲信号源，用于产生入射电信号；信号采样模块，所述信号采样模块通过耦合器与所述脉冲信号源相连；其中，所述耦合器用于将所述入射电信号一分二作为被测设备的测试输入信号和采样入射信号，所述信号采样模块用于采集所述采样入射信号和所述被测设备基于所述测试输入信号产生的第一测试输出信号，以输出第一时域信号；S参数处理模块，所述S参数处理模块与所述信号采样模块相连，用于控制所述第一时域信号变换为对应的S参数。本实用新型实施例的技术方案，以实现同时对时域、频域、阻抗域的电信号特性测试测量，且测量速度快。
The embodiment of the utility model discloses an S parameter measuring device. The S-parameter measurement device includes: a pulse signal source for generating an incident electrical signal; a signal sampling module, the signal sampling module is connected to the pulse signal source through a coupler; wherein the coupler is used for the incident electrical signal The signal is divided into two as the test input signal and the sampled incident signal of the device under test, and the signal sampling module is used to collect the sampled incident signal and the first test output signal generated by the device under test based on the test input signal, to output a first time-domain signal; an S-parameter processing module, the S-parameter processing module is connected to the signal sampling module, and is used to control the transformation of the first time-domain signal into a corresponding S-parameter. The technical solution of the embodiment of the present invention is to realize the test and measurement of the electrical signal characteristics in the time domain, the frequency domain and the impedance domain at the same time, and the measurement speed is fast.
Description
Technical Field
The embodiment of the utility model provides an relate to electronic circuit technical field, especially relate to a S parameter measurement device.
Background
The S-parameter, i.e. the scattering parameter, is an important parameter in microwave transmission. S12 is the reverse transmission coefficient, i.e., isolation, S21 is the forward transmission coefficient, i.e., gain, S11 is the input reflection coefficient, i.e., input return loss, and S22 is the output reflection coefficient, i.e., output return loss. The S parameter is widely applied to signal integrity analysis and simulation of devices and circuits.
The S-parameter is typically measured using a network analyzer (VNA) or a sampling oscilloscope. The VNA is a special frequency domain measuring instrument, generally, a sine wave is directly loaded to a DUT, S parameter measurement is directly performed in a frequency sweep manner, and the VNA has a full S parameter measurement function, low noise, and a large dynamic range, but is generally very expensive and cannot perform low frequency signal measurement. The sampling oscilloscope performs time domain and frequency domain change based on the TDR technology, so that S parameters can be obtained, the sampling oscilloscope has high sampling pulse rise time, and can realize very high bandwidth and resolution ratio and generally realize dozens of GHz bandwidth by a multi-sampling averaging technology.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a S parameter measuring device to the realization is measured the signal of telecommunication characteristic test of time domain, frequency domain, impedance domain simultaneously, and measuring speed is fast.
The embodiment of the utility model provides a S parameter measuring device, this S parameter measuring device includes:
a pulse signal source for generating an incident electrical signal;
the signal sampling module is connected with the pulse signal source through a coupler; the coupler is used for dividing the incident electric signal into two parts to serve as a sampling incident signal and a test input signal of the tested device, and the signal sampling module is used for collecting the sampling incident signal and a first test output signal generated by the tested device based on the test input signal to output a first time domain signal;
and the S parameter processing module is connected with the signal sampling module and is used for controlling the first time domain signal to be converted into a corresponding S parameter.
Further, the signal sampling module is further configured to collect a second test output signal generated by the device under test based on the test input signal to output a second time domain signal;
the S parameter processing module is further configured to control the second time domain signal to be transformed into a corresponding S parameter.
Further, the S parameter measuring device also comprises a display module;
and the display module is connected with the S parameter processing module and is used for simultaneously displaying the first time domain signal, the second time domain signal and at least two signals in the S parameter curve.
Further, the S parameter measuring device further includes a clock module;
the clock module is respectively connected with the pulse signal source and the signal sampling module.
Further, the pulse signal source comprises a first pulse signal source and a second pulse signal source, the coupler comprises a first coupler and a second coupler, and the signal sampling module comprises a first signal sampling module and a second signal sampling module;
the first signal sampling module is connected with the first pulse signal source through the first coupler, and the first coupler is connected with a first port of the tested device;
the second signal sampling module is connected with the second pulse signal source through the second coupler, and the second coupler is connected with the second port of the tested device.
Further, the pulse signal source comprises a first pulse signal source and a second pulse signal source, the coupler comprises a first coupler, a second coupler, a third coupler and a fourth coupler, and the signal sampling module comprises a first signal sampling module, a second signal sampling module, a third signal sampling module and a fourth signal sampling module;
the first signal sampling module is connected with the first pulse signal source through the first coupler, and the first coupler is connected with a first port of the tested device;
the second signal sampling module is connected with the first pulse signal source through the second coupler, and the second coupler is connected with a second port of the tested device;
the third signal sampling module is connected with the second pulse signal source through the third coupler, and the third coupler is connected with a third port of the tested device;
the fourth signal sampling module is connected with the second pulse signal source through the fourth coupler, and the fourth coupler is connected with the fourth port of the tested device.
Further, the coupler is arranged inside the S parameter measuring device;
and the signal output end of the pulse signal source is connected with the signal input end of the coupler.
Further, the coupler is disposed outside the S parameter measuring device;
and the signal output end of the S parameter measuring device is connected with the signal input end of the coupler, and the signal output end of the S parameter measuring device is used for outputting the incident electric signal generated by the pulse signal source.
Furthermore, a first signal output end of the coupler is connected with a signal input end of the tested device, and a second signal output end of the coupler is connected with the signal sampling module.
Further, the S parameter measuring device is an oscilloscope.
The utility model discloses technical scheme, this S parameter measurement device includes: a pulse signal source for generating an incident electrical signal; the signal sampling module is connected with the pulse signal source through a coupler; the coupler is used for dividing the incident electric signal into two parts to serve as a sampling incident signal and a test input signal of the tested device, and the signal sampling module is used for collecting the sampling incident signal and a first test output signal generated by the tested device based on the test input signal to output a first time domain signal; and the S parameter processing module is connected with the signal sampling module and is used for controlling the first time domain signal to be converted into a corresponding S parameter. The problems that in the prior art, low-frequency signals cannot be measured, cost is high, and testing technology difficulty is high are solved, so that the electric signal characteristics of a time domain, a frequency domain and an impedance domain can be tested and measured simultaneously, and the measuring speed is high.
Drawings
Fig. 1 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention;
fig. 2 is a schematic waveform diagram of an impulse response signal provided by an embodiment of the present invention;
fig. 3 is a schematic diagram of a S11 parameter curve provided by the embodiment of the present invention;
fig. 4 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention;
fig. 5 is a schematic waveform diagram of a step response signal provided by an embodiment of the present invention;
fig. 6 is a schematic diagram of an impact response curve provided by an embodiment of the present invention;
fig. 7 is a schematic diagram of an S21 parameter curve provided by an embodiment of the present invention;
fig. 8 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the following describes in detail specific embodiments of the present invention with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention.
Fig. 1 is the embodiment of the utility model provides a pair of S parameter measuring device 'S schematic structure diagram, this embodiment is applicable to the S parameter measuring' S of passive devices such as test coaxial line, PCB, wave filter the condition.
The S parameter measuring device comprises the following specific structure:
a pulse signal source 110 for generating an incident electrical signal;
a signal sampling module 120, wherein the signal sampling module 120 is connected to the pulse signal source 110 through a coupler 140; wherein the coupler 140 is configured to divide the incident electrical signal into two parts as a sampled incident signal and a test input signal of the device under test 150, and the signal sampling module 120 is configured to collect the sampled incident signal and a first test output signal generated by the device under test 150 based on the test input signal to output a first time domain signal;
an S-parameter processing module 130, where the S-parameter processing module 130 is connected to the signal sampling module 120, and is configured to control the first time domain signal to be converted into a corresponding S-parameter.
The pulse signal source 110 serves as an incident signal source of the S-parameter measuring device, and is configured to generate an incident electrical signal, which may be a step signal or a pulse signal, and has a fast rising edge, i.e., a very short signal edge rising time, and for example, the edge rising time of the incident electrical signal is about 30 picoseconds.
It should be noted that, in this embodiment, the rise time of the incident electrical signal determines the bandwidth and resolution of the time domain signal or the S parameter, and generally a high-speed step signal (fast edge signal) or a pulse signal is adopted, where the rise time is generally less than 1 nanosecond, and the time domain signal includes the first time domain signal and/or the second time domain signal.
Further, the pulse signal source 110 is implemented by using a two-stage high-speed digital logic comparator, and the output impedance of the pulse signal source 110 is 50 ohms.
The signal sampling module 120 is a channel for an analog signal of the S parameter measuring device, the signal sampling module 120 is configured to collect a sampling incident signal generated by the pulse signal source 110 and a first test output signal generated by the device under test 150 based on the test input signal, the signal sampling module 120 outputs a first time domain signal, the output first time domain signal is a signal obtained by superimposing the sampling incident signal and the first test output signal, and in this embodiment, the time domain signal may be a TDR signal.
The coupler 140 may be built in the S parameter measuring device or may be externally installed on the S parameter measuring device, and after the coupler 140 fans out the incident electrical signal by one to two, one path is used as an input signal of the device under test 150, i.e., a test input signal, and the other path is used as a reference signal, i.e., a sampling incident signal, and is connected to the signal sampling module 120.
On the basis of the above embodiments, the coupler 140 is one of a power divider, a directional coupler, a standing-wave ratio bridge, or an operational amplifier, and the two common resistive power dividers are respectively a star-type power divider and a triangular resistive power divider, which is not limited in this embodiment.
Based on the above embodiment, the signal sampling module 120 performs a difference between the first test output signal and the sampling incident signal to obtain a first time domain signal (here, a TDR signal), and further obtains a DUT impedance curve through reflection coefficient calculation.
The S parameter processing module 130 is configured to perform time domain to frequency domain transformation on the first time domain signal, that is, perform time domain to frequency domain transformation on the TDR signal, so as to obtain an S11 parameter curve, that is, a return loss coefficient.
Fig. 2 is a schematic waveform diagram of an impulse response signal provided by an embodiment of the present invention, and fig. 3 is a schematic diagram of an S11 parameter curve provided by an embodiment of the present invention. Referring to fig. 2 and 3, based on the above embodiments, it can be understood that a common time domain to frequency domain variation is FFT operation, in this embodiment, a TDR curve may be differentiated first to obtain an impulse response, as shown in fig. 2, and then FFT operation is performed to obtain an amplitude and frequency curve, i.e., an S11 (return loss) parameter curve, as shown in fig. 3, since an S11 parameter is transformed from a first time domain signal, the first time domain signal and the S parameter curve may be displayed simultaneously, and an S parameter curve may be obtained by calculating once according to an acquired signal, so that the speed is high, and a fast refresh display may be realized at the same time.
Further, on the basis of the above embodiment, the S parameter measuring device may be an oscilloscope having a built-in pulse source. The device under test 150 may be a circuit board or other component requiring an impedance test, which is not limited in this embodiment.
The utility model discloses technical scheme, this S parameter measurement device includes: a pulse signal source for generating an incident electrical signal; the signal sampling module is connected with the pulse signal source through a coupler; the coupler is used for dividing the incident electric signal into two parts to serve as a sampling incident signal and a test input signal of the tested device, and the signal sampling module is used for collecting the sampling incident signal and a first test output signal generated by the tested device based on the test input signal to output a first time domain signal; and the S parameter processing module is connected with the signal sampling module and is used for controlling the first time domain signal to be converted into a corresponding S parameter. The method solves the problems that the S parameter of the low-frequency signal can not be measured, the cost is high, and the testing technology difficulty is high in the prior art, further realizes the testing and measuring of the electrical signal characteristics of a time domain, a frequency domain and an impedance domain at the same time, and is high in measuring speed.
Fig. 4 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention. Referring to fig. 4, the signal sampling module 120 is further configured to collect a second test output signal generated by the device under test 150 based on the test input signal to output a second time domain signal.
The signal sampling module 120 is a channel for analog signals with the same function on the S parameter measuring device.
Specifically, with continued reference to fig. 4, the signal sampling module 120 may include a first signal sampling channel and a second signal sampling channel, where the first signal sampling channel collects the sampled incident signal and a first test output signal generated by the device under test based on the test input signal to output a first time domain signal (for example, may be a TDR signal), and the second signal sampling channel collects a second test output signal generated by the device under test 150 based on the test input signal to output a second time domain signal (for example, may be a TDT signal).
Of course, the first time domain signal and the second time domain signal may also be a TDT signal and a TDR signal, respectively, and the above embodiments are merely examples, and do not limit specific contents of the first time domain signal and the second time domain signal.
Fig. 5 is a schematic waveform diagram of a step response signal provided by an embodiment of the present invention, fig. 6 is a schematic diagram of an impact response curve provided by an embodiment of the present invention, and fig. 7 is a schematic diagram of an S21 parameter curve provided by an embodiment of the present invention. Referring to fig. 5, 6 and 7, based on the above embodiment, the waveform of the response signal of the device under test 150 is a TDT (time domain transmission) waveform in the time domain, where the TDT curve is a step response signal (see fig. 5), the step response curve is differentiated to obtain an impulse response curve (see fig. 6), and then the impulse response curve is subjected to FFT operation to obtain a frequency response function of the device under test 150, i.e., an S21 (insertion loss) parameter curve.
On the basis of the above embodiment, the S parameter measuring device further includes a display module;
the display module is connected with the S parameter processing module and is used for simultaneously displaying the first time domain signal, the second time domain signal and at least two signals in the S parameter curve, wherein the first time domain signal and/or the second time domain signal are TDR signals and/or TDT signals.
The display module may be a display device integrated on the S parameter measuring device, for example, when the S parameter measuring device is an oscilloscope, the display module may be a display screen of the oscilloscope, and the display module may also be a display device separately connected to the S parameter measuring device for use, for example, the display device is an independent display screen or a terminal device with a display screen. The embodiment does not limit the specific type and the placement position of the display module at all, and can be any device capable of realizing the display function in the prior art.
In this embodiment, the display module can simultaneously display the time domain waveform, the impedance domain waveform and the S domain waveform, can display better low-frequency characteristics, and has a fast measurement speed.
With continued reference to fig. 1, on the basis of the above embodiment, the S parameter measuring apparatus further includes a clock module 160;
the clock module 160 is connected to the pulse signal source 110 and the signal sampling module 120, respectively.
The clock module 160 is configured to generate a sampling clock of the signal sampling module 120 and a sampling clock of the pulse signal source 110, and the clock module 160 may generate the sampling clock by using a Phase Locked Loop (PLL), an FPGA, a clock chip, or the like.
The clock module 160 is used to ensure that the outputs are in the same clock domain, for example, the pulse signal source 110 and the signal sampling module 120 have the same clock domain and have a fixed phase relationship, although a certain phase difference is inevitable due to the circuit design, but can be eliminated by calibration, and in this embodiment, the optimal phase relationship is a phase difference of 0.
Fig. 8 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention. Referring to fig. 8, on the basis of the above embodiment, the pulse signal source includes a first pulse signal source 111 and a second pulse signal source 112, the coupler includes a first coupler 141 and a second coupler 142, and the signal sampling module includes a first signal sampling module 121 and a second signal sampling module 122;
the first signal sampling module 121 is connected to the first pulse signal source 111 through the first coupler 141, and the first coupler 141 is connected to a first port of the device under test 150;
the second signal sampling module 122 is connected to the second pulse signal source 112 through the second coupler 142, and the second coupler 142 is connected to the second port of the device under test 150.
In the present embodiment, a complete 2-port S parameter measurement can be achieved, referring to fig. 8, the second signal sampling module 122 is connected to the second port of the device under test 150 through the second coupler 142, the second coupler 142 is further connected to the second pulse signal source 112, and likewise, the second pulse signal source 112 is also connected to the clock module 160, and has a fixed phase relationship with the second signal sampling module 122.
The second pulse signal source 112 outputs, and the first pulse signal source 111 does not output, so that the measurements of the S22 (reflection coefficient) parameter and the S12 (crosstalk) parameter can be obtained. The complete dual-port S parameter measurement items S11, S12, S21 and S22 can be realized by combining the measurement when the first pulse signal source 111 outputs alone.
Fig. 9 is a schematic structural diagram of an S parameter measuring device according to an embodiment of the present invention. Referring to fig. 9, on the basis of the above embodiment, the pulse signal source includes a first pulse signal source 111 and a second pulse signal source 112, the couplers include a first coupler 141, a second coupler 142, a third coupler 143, and a fourth coupler 144, and the signal sampling module includes a first signal sampling module 121, a second signal sampling module 122, a third signal sampling module 123, and a fourth signal sampling module 124;
the first signal sampling module 121 is connected to the first pulse signal source 111 through the first coupler 141, and the first coupler 141 is connected to a first port of the device under test 150;
the second signal sampling module 122 is connected to the first pulse signal source 111 through the second coupler 142, and the second coupler 142 is connected to the second port of the device under test 150;
the third signal sampling module 123 is connected to the second pulse signal source 112 through the third coupler 143, and the third coupler 143 is connected to a third port of the device under test 150;
the fourth signal sampling module 124 is connected to the second pulse signal source 112 through the fourth coupler 144, and the fourth coupler 144 is connected to the fourth port of the device under test 150.
In this embodiment, a complete 4-port S parameter measurement can be realized, referring to fig. 9, the S parameter measurement apparatus includes 4 signal sampling modules, 4 couplers, and 2 pulse signal sources, and the pulse signal source may be a differential pulse signal source, that is, the first pulse signal source 111 and the second pulse signal source 112 are differential pulse signal sources.
By controlling the first pulse signal source 111 and the second pulse signal source 112 to generate incident electrical signals respectively and analyzing the signals of the first signal sampling module 121, the second signal sampling module 122, the third signal sampling module 123 and the fourth signal sampling module 124, complete 4-port S parameter measurement results of S11, S12, S13, S14, S21, S22, S23, S24, S31, S32, S33, S34, S41, S42, S43 and S44 can be obtained.
It is understood that the first pulse signal source 111 is connected to the clock module 160, and has a fixed phase relationship with the first signal sampling module 121 and the second signal sampling module 122; the second pulse signal source 112 is also connected to the clock module 160, and the third signal sampling module 123 and the fourth signal sampling module 124 have a fixed phase relationship.
With continued reference to fig. 1, on the basis of the above-described embodiment, the coupler is disposed inside the S-parameter measuring device;
a signal output terminal of the pulse signal source 110 is connected to a signal input terminal of the coupler 140.
In this embodiment, when the coupler 140 is inside the electrical signal measuring apparatus, the coupler 140 has two output terminals, a first signal output terminal of the coupler 140 is connected to a signal input terminal of the device under test 150 by using a delay cable, and a second signal output terminal of the coupler 140 is connected to the signal sampling module 120 by using a delay cable with the same specification.
Specifically, the S parameter measuring device triggers a signal input to the signal sampling module 120, and then the S parameter measuring device controls a signal split from the coupler 140 inside the S parameter measuring device, that is, a sampling incident signal, and when the signal passes through the coupler 140 inside the S parameter measuring device to fan out a test input signal and goes along a delay line to the device under test 150, the device under test 150 generates a first test output signal according to the output impedance of the test input signal, and after the first test output signal is reflected from the device under test 150 to the coupler 140 inside the S parameter measuring device, the first test output signal flows into the signal sampling module 120 of the S parameter measuring device through the coupler 140 inside the S parameter measuring device. At this time, the signal sampled by the S parameter measuring device is the sampling incident signal and the first test output signal of the device under test 150.
It is understood that in the above-described embodiment, the coupler 140 is disposed inside the S-parameter measuring device, and the transmission of the signal is completed inside the S-parameter measuring device.
With continued reference to fig. 1, on the basis of the above embodiment, the coupler is disposed outside the S-parameter measuring device;
the signal output end of the S parameter measuring device is connected to the signal input end of the coupler 140, and the signal output end of the S parameter measuring device is used for outputting the incident electrical signal generated by the pulse signal source 110.
In this embodiment, when the coupler 140 is outside the S parameter measuring device, the signal output end of the S parameter measuring device is connected to the signal input end of the coupler 140, the coupler 140 has two output terminals, the first signal output end of the coupler 140 is connected to the signal input end of the device under test 150 by using a delay cable, and the second signal output end of the coupler 140 is connected to the signal sampling module 120 by using a delay cable with the same specification.
Specifically, the S parameter measuring device triggers a signal input to the signal sampling module 120, and then the S parameter measuring device outputs a signal split from the external coupler 140, that is, an incident electrical signal, and when the test input signal fanned out by the external coupler 140 is routed to the device under test 150 along a delay line, the device under test 150 generates a first test output signal according to an output impedance of the test input signal, and after the first test output signal is reflected from the device under test 150 to the external coupler 140, the first test output signal flows into the signal sampling module 120 of the S parameter measuring device through the external coupler 140. At this time, the signal sampled by the S parameter measuring device is the sampling incident signal and the first test output signal of the device under test 150.
It is understood that in the above embodiments, the coupler 140 is disposed outside the S parameter measuring device, and the transmission of the signal is completed by the interaction of the S parameter measuring device and the external coupler 140.
It should be noted that, when coupler 140 is arranged inside S parameter measurement device, then will lead to S parameter measurement device 'S sampling channel to need to increase the switching, or fix S parameter measurement device into time domain reflection measuring apparatu (TDR appearance), can't realize the embodiment of the utility model provides an S parameter measurement device both can carry out TDR TDT function and use, can regard as oscilloscope again to use, and simultaneously, the operation is more troublesome, and coupler 140 arranges S parameter measurement device outside more nimble in, and not only can realize TDR TDT 'S function, can realize oscilloscope' S function again to this can realize more functions.
The utility model discloses technical scheme, this S parameter measurement device, incident signal, reflected signal and transmission signal through sampling each port of equipment under test, through the time domain frequency domain change, realize the measurement of S parameter, can also realize the S parameter measurement of N port, N is greater than or equal to 1.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
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