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CN212011029U - A photovoltaic cell structure - Google Patents

A photovoltaic cell structure Download PDF

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CN212011029U
CN212011029U CN202020706153.9U CN202020706153U CN212011029U CN 212011029 U CN212011029 U CN 212011029U CN 202020706153 U CN202020706153 U CN 202020706153U CN 212011029 U CN212011029 U CN 212011029U
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photovoltaic cell
cell structure
etching grooves
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张裕洋
丁定国
刘修铭
黄松建
陈耀宗
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Nanobit Tech Co ltd
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Abstract

一种光伏电池结构,包含:一透明导电基板、一电子传递层、一主动层、多条第一蚀刻槽、多条第二蚀刻槽、多条第三蚀刻槽、多个绝缘层、一电洞传递层及多个串接导电层。以该些蚀刻槽阻隔构成光伏单元,并在该些蚀刻槽填满铺设有多个绝缘层。另以其一蚀刻槽填满铺设与该电洞传递层相同材料,以串接该电洞传递层与该下导电层电性连接,以构成光伏电池结构的制作。在省去现有以金属为导电层的制作,可以增加光伏材料涂层的受光面积,并且以蚀刻槽间隙并结合绝缘层的填补设计,增加光伏电池作业裕度,提升良率及光电转换有效区域的利用。

Figure 202020706153

A photovoltaic cell structure includes: a transparent conductive substrate, an electron transfer layer, an active layer, a plurality of first etching grooves, a plurality of second etching grooves, a plurality of third etching grooves, a plurality of insulating layers, a hole transfer layer and a plurality of series-connected conductive layers. The etching grooves are used to block and form a photovoltaic unit, and the etching grooves are filled with a plurality of insulating layers. In addition, one of the etching grooves is filled with the same material as the hole transfer layer, and the hole transfer layer is connected in series and electrically connected to the lower conductive layer to form a photovoltaic cell structure. By eliminating the existing production of metal as a conductive layer, the light-receiving area of the photovoltaic material coating can be increased, and the etching groove gap is filled with an insulating layer to increase the operating margin of the photovoltaic cell, improve the yield and the utilization of the effective area of photoelectric conversion.

Figure 202020706153

Description

一种光伏电池结构A photovoltaic cell structure

技术领域technical field

本实用新型涉及一种光伏电池结构,尤其涉及一种关于电极结构的光伏电池结构。The utility model relates to a photovoltaic cell structure, in particular to a photovoltaic cell structure related to an electrode structure.

背景技术Background technique

光伏电池的研究是再生能源中受众人期待的一个方向。虽然现今已商业化的多数产品是以硅为其主要材料,不过使用高分子材料所开发的有机光伏电池因其工艺简单、造价便宜、材质轻盈、可挠曲等特性而受到业界与学术界的瞩目。Photovoltaic cell research is an expected direction in renewable energy. Although most of the commercialized products today use silicon as the main material, organic photovoltaic cells developed using polymer materials have been favored by the industry and academia due to their simple process, low cost, lightness, flexibility and other characteristics. Attention.

目前在制备有机光伏电池时,其多是通过涂布(Coating)为制备光伏电池薄膜的技术手段,其优点在于能够使得该薄膜具有较佳的平整性与均匀性。而进一步可以R2R工艺即是一种具有潜力用以大面积制备有机光伏电池的技术,其在产业界已有配合,R2R工艺即可良好地配合其运作,得以在较低成本之下生产这些具有可塑性、重量轻、耐冲击等优点。At present, in the preparation of organic photovoltaic cells, coating is mostly used as a technical means for preparing photovoltaic cell thin films, which has the advantage of enabling the thin film to have better flatness and uniformity. Furthermore, the R2R process is a potential technology for large-area preparation of organic photovoltaic cells. It has already cooperated in the industry, and the R2R process can cooperate with its operation well, and can produce these organic photovoltaic cells at a lower cost. Plasticity, light weight, impact resistance and other advantages.

近来更有将光伏电池制作为可以双面照光及具有透光的半透明结构,以做为更多的产品应用,如建物的窗户等应用,不过结构中材料的颜色限制及其上下导电层金属材料作为电性连接的线路制作,都会影响该光伏电池透光性甚至影响照光的光电传换效率。Recently, photovoltaic cells have been made into a translucent structure that can illuminate on both sides and have light transmission for more product applications, such as building windows, etc. However, the color of the materials in the structure is limited and the metal of the upper and lower conductive layers is limited. The material used as an electrical connection circuit will affect the light transmittance of the photovoltaic cell and even affect the photoelectric conversion efficiency of illumination.

进一步探讨光伏电池的光电转换装置在结构上有很多种,其中一种称为光伏电池的光电转换装置,如有机光伏电池或者是钙钛矿光伏电池,其中该光伏电池由多个光伏单元串、并联而成,而各该光伏单元包含电子传递层、主动层(在OPV中吸光层称为BHJ layer(bulk-heterojunction layer),在Perovskite solar cell中就称为Perovskite layer)、电洞传递层,进一步再由上下层的电极导线线性连接达成光电转换及电子传递的效果。There are many types of photoelectric conversion devices for further discussion of photovoltaic cells, one of which is a photoelectric conversion device called photovoltaic cells, such as organic photovoltaic cells or perovskite photovoltaic cells, in which the photovoltaic cell consists of a plurality of photovoltaic cell strings, In parallel, each photovoltaic unit includes an electron transport layer, an active layer (the light absorbing layer is called BHJ layer (bulk-heterojunction layer) in OPV, and it is called Perovskite layer in Perovskite solar cell), hole transport layer, Further, the electrode wires of the upper and lower layers are linearly connected to achieve the effects of photoelectric conversion and electron transfer.

其中以有机光伏电池为例,电子传递层可以是PEI为主成分构成,主动层可以是溶剂稀释的P3HT/PCBM、PCPDTBT/PCBM,其中P3HT/PCBM为有多个聚3-己烷基噻吩(poly(3-hexylthiophene),P3HT(p型材料))聚合物半导体及多个苯基-C61丁酸甲酯(phenyl-C61-butyric acid methylester,PCBM(n型材料))混合而成,至于电洞传递层可以是经溶剂稀释的PEDOT:PSS为主成分(PEDOT:PSS),包含有多个EDOT(3,4-亚乙二氧噻吩单体)的聚合物及多个聚苯乙烯磺酸钠(sodium-p-styrenesulfonate,PSS)混合而成。Taking an organic photovoltaic cell as an example, the electron transport layer can be composed of PEI as the main component, and the active layer can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is a poly-3-hexylthiophene ( Poly(3-hexylthiophene), P3HT (p-type material)) polymer semiconductor and a plurality of phenyl-C61-butyric acid methylester (phenyl-C61-butyric acid methylester, PCBM (n-type material)) are mixed. The hole transfer layer can be a solvent-diluted PEDOT:PSS main component (PEDOT:PSS), a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) and a plurality of polystyrene sulfonic acid Sodium (sodium-p-styrenesulfonate, PSS) is mixed.

其中前述的电洞传递层(HTL)除具备电洞移转的功能性需求外,因为该PEDOT:PSS也可具导电性,因此本实用新型利用电洞传递层具有导电特性而提出一种新颖的光伏电池结构设计,来改善传统光伏电池结构及简化工艺并降低制作成本,更可提高光电转换效率。The aforementioned hole transport layer (HTL) not only has the functional requirement of hole transfer, because the PEDOT:PSS can also have conductivity, so the present invention proposes a novel method by utilizing the conductive properties of the hole transport layer. The photovoltaic cell structure design can improve the traditional photovoltaic cell structure, simplify the process and reduce the production cost, and can also improve the photoelectric conversion efficiency.

实用新型内容Utility model content

因此,本实用新型的主要目的,在于提供一种改良的光伏电池结构,其中采用电洞(空穴)传递层(HTL)以具高导电性的材料构成阻抗100Ω/□(常见单位“欧姆平方”表示为Ω□,或“每平方欧姆”表示为Ω/□)以下,透光率50%以上,该电洞传递层同时兼具导电功能,省去上导电层的制作,以简化工艺降低制作成本的光伏电池结构,并可增加该光伏电池的透光性以及增加光电转换效率。Therefore, the main purpose of the present invention is to provide an improved photovoltaic cell structure, wherein a hole (hole) transport layer (HTL) is used to form an impedance of 100Ω/□ (common unit "ohm square") with a material with high conductivity ” is expressed as Ω□, or “per square ohm” is expressed as Ω/□) or less, the light transmittance is more than 50%, the hole transfer layer also has a conductive function, and the production of the upper conductive layer is omitted to simplify the process. The cost-effective photovoltaic cell structure can increase the light transmittance and photoelectric conversion efficiency of the photovoltaic cell.

本实用新型的另一目的,在于光伏电池结构上结合多个蚀刻槽,其中以该些蚀刻槽以阻隔构成光伏单元,并在该些蚀刻槽填满铺设有多个绝缘层。另外以其一蚀刻槽当作贯通孔填满铺设与该电洞传递层相同材料,以串接该电洞传递层与该下导电层电性连接,以构成光伏电池结构的制作。在本实用新型结构省去现有以金属为导电层的制作,可以增加光伏材料涂层的受光面积,并且以蚀刻槽间隙并结合绝缘层的填补设计,增加光伏电池作业裕度,提升良率及光电转换有效区域的利用。Another object of the present invention is to combine a plurality of etching grooves on the photovoltaic cell structure, wherein the etching grooves are used to form photovoltaic cells, and the etching grooves are filled with a plurality of insulating layers. In addition, an etching groove is used as a through hole to be filled with the same material as the hole transfer layer, so as to connect the hole transfer layer and the lower conductive layer in series, so as to form a photovoltaic cell structure. The structure of the utility model omits the fabrication of the existing metal as the conductive layer, which can increase the light-receiving area of the photovoltaic material coating, and the gap between the etching grooves and the filling design of the insulating layer are used to increase the operating margin of the photovoltaic cell and improve the yield. And the utilization of photoelectric conversion effective area.

为达上述目的,本实用新型提供一种光伏电池结构,其包含:In order to achieve the above purpose, the present invention provides a photovoltaic cell structure, which comprises:

一透明导电基板,包含有一透明基板及一下导电层,该下导电层设于该透明基板一侧面上﹔a transparent conductive substrate, including a transparent substrate and a lower conductive layer, the lower conductive layer is disposed on one side of the transparent substrate;

一电子传递层,设于该下导电层的一侧面上﹔an electron transport layer, disposed on one side of the lower conductive layer;

一主动层,设于该电子传递层的一侧面上﹔an active layer, disposed on one side of the electron transport layer;

多条第一蚀刻槽,以贯穿该主动层、该电子传递层及该下导电层,以形成多个光伏单元﹔a plurality of first etching grooves to penetrate the active layer, the electron transport layer and the lower conductive layer to form a plurality of photovoltaic units;

多条第二蚀刻槽,以贯穿该主动层及该电子传递层﹔a plurality of second etching grooves to penetrate through the active layer and the electron transport layer;

多条第三蚀刻槽,以纵向及横向的贯穿该主动层及该电子传递层﹔A plurality of third etching grooves penetrate the active layer and the electron transport layer longitudinally and laterally;

多个绝缘层,设于该些第一蚀刻槽及该些第三蚀刻槽的内部﹔a plurality of insulating layers disposed inside the first etching grooves and the third etching grooves;

一电洞传递层,分别设于已被蚀刻多个小单元的该主动层表面的特定区域上﹔a hole transport layer, respectively disposed on a specific area of the surface of the active layer where a plurality of small cells have been etched;

多个串接导电层,设于该些第二蚀刻槽内部,使该电洞传递层与该下导电层电性连接。A plurality of series-connected conductive layers are arranged inside the second etching grooves, so that the hole transfer layer is electrically connected to the lower conductive layer.

上述的光伏电池结构,其中该电子传递层的结构层厚度为0.5nm-10nm。In the above photovoltaic cell structure, the thickness of the structure layer of the electron transport layer is 0.5nm-10nm.

上述的光伏电池结构,其中该主动层的结构层厚度为100nm-500nm。In the above photovoltaic cell structure, the structure layer thickness of the active layer is 100nm-500nm.

上述的光伏电池结构,其中该电洞传递层的结构层厚度为100nm-1um。In the above photovoltaic cell structure, the structural layer thickness of the hole transport layer is 100nm-1um.

上述的光伏电池结构,其中该电洞传递层的阻抗为1-100Ω/□。In the above photovoltaic cell structure, the impedance of the hole transport layer is 1-100Ω/□.

上述的光伏电池结构,其中该电洞传递层表面上更包含有一反光层。In the above photovoltaic cell structure, the hole transport layer further includes a reflective layer on the surface.

上述的光伏电池结构,其中该些第一蚀刻槽为10um-500um。In the above photovoltaic cell structure, the first etching grooves are 10um-500um.

上述的光伏电池结构,其中该些第二蚀刻槽及该些第三蚀刻槽宽距为10um-500um。In the above photovoltaic cell structure, the widths of the second etching grooves and the third etching grooves are 10um-500um.

上述的光伏电池结构,其中该电洞传递层及该下导电层各电性连接一银浆为材料的引线与外部电性连接,该引线经印刷制作为一排线接线区而成。In the above photovoltaic cell structure, the hole transfer layer and the lower conductive layer are each electrically connected to a lead wire made of silver paste and electrically connected to the outside, and the lead wire is printed to form a wiring area.

上述的光伏电池结构,其中该透明导电基板为透明导电层卷材。In the above photovoltaic cell structure, the transparent conductive substrate is a transparent conductive layer coil.

上述的光伏电池结构,其中该透明基板一侧或两侧设置一缓冲层,以增加该透明基板的强度或与该下导电层的附着力。In the above photovoltaic cell structure, a buffer layer is provided on one side or both sides of the transparent substrate to increase the strength of the transparent substrate or the adhesion with the lower conductive layer.

上述的光伏电池结构,其中该透明基板为透光塑料或透光玻璃基板。In the above photovoltaic cell structure, the transparent substrate is a transparent plastic or a transparent glass substrate.

上述的光伏电池结构,其中该透明基板的厚度为10um-500um。In the above photovoltaic cell structure, the thickness of the transparent substrate is 10um-500um.

上述的光伏电池结构,其中该下导电层透光率是70%-95%。In the above photovoltaic cell structure, the light transmittance of the lower conductive layer is 70%-95%.

上述的光伏电池结构,其中该光伏电池结构的上下贴附的阻水阻气材料层进行封装,以构成光伏电池元件。The above photovoltaic cell structure, wherein the upper and lower water-blocking and gas-blocking material layers of the photovoltaic cell structure are encapsulated to form a photovoltaic cell element.

上述的光伏电池结构,其中该阻水阻气材料层包含一阻水阻气层、一阻水阻气层。In the above photovoltaic cell structure, the water and gas barrier material layer comprises a water and gas barrier layer and a water and gas barrier layer.

上述的光伏电池结构,其中该阻水阻气层的厚度50um-500um。In the above photovoltaic cell structure, the thickness of the water blocking gas blocking layer is 50um-500um.

以下结合附图和具体实施例对本实用新型进行详细描述,但不作为对本实用新型的限定。The present utility model will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but it is not intended to limit the present utility model.

附图说明Description of drawings

图1a,本实用新型的光伏电池结构的光伏层示意图;Figure 1a is a schematic diagram of the photovoltaic layer of the photovoltaic cell structure of the present invention;

图1b,为图1a俯视示意图﹔Fig. 1b is a schematic top view of Fig. 1a;

图2a,为图1a在光伏层的电子传递层、主动层及下导电层进行第一蚀刻槽、第二蚀刻槽及第三蚀刻槽的切割侧视示意图﹔FIG. 2a is a schematic side view of cutting the first etching groove, the second etching groove and the third etching groove in the electron transport layer, the active layer and the lower conductive layer of the photovoltaic layer in FIG. 1a;

图2b,为图2a的俯视示意图﹔Fig. 2b is a schematic top view of Fig. 2a;

图3a,为图2a在第一蚀刻槽及第三蚀刻槽内部制作绝缘层侧视示意图﹔Fig. 3a is a schematic side view of the insulating layer formed inside the first etching groove and the third etching groove in Fig. 2a;

图3b,为图3a的俯视示意图﹔Fig. 3b is a schematic top view of Fig. 3a;

图4a,为图3a在主动层上进行电洞传递层、串接导电层制作的侧视示意图﹔FIG. 4a is a schematic side view of the hole transfer layer and the series-connected conductive layer on the active layer in FIG. 3a;

图4b,为图4a的俯视示意图﹔Fig. 4b is a schematic top view of Fig. 4a;

图5,为本实用新型的另一光伏电池结构实施例示意图。FIG. 5 is a schematic diagram of another photovoltaic cell structure embodiment of the present invention.

其中,附图标记where the reference number

光伏层 10Photovoltaic layer 10

透明导电基板 1Transparent Conductive Substrate 1

透明基板 11Transparent substrate 11

下导电层 12lower conductive layer 12

电子传递层 2Electron Transport Layer 2

主动层 3Active Layer 3

电洞传递层 4hole transport layer 4

绝缘层 5Insulation layer 5

串接导电层 6Series conductive layer 6

阻水阻气材料层 7Water and gas barrier material layer 7

阻水阻气层 71Water and Air Barrier 71

阻水阻气层 72Water and Air Barrier 72

阻水阻气胶 73Water blocking and air blocking glue 73

第一蚀刻槽 20first etching groove 20

第二蚀刻槽 30Second etching groove 30

第三蚀刻槽 40The third etching groove 40

具体实施方式Detailed ways

兹有关本实用新型的技术内容及详细说明,现配合附图说明如下:Hereby, the technical content and detailed description of the present utility model are described as follows in conjunction with the accompanying drawings:

请参阅图1a、1b,本实用新型的光伏电池结构的光伏层及图1a的俯视示意图。如图所示:本实用新型一种光伏电池结构,依序先将光伏层10,包含一电子传递层2、一主动层3,依序涂布于一透明导电基板(或透明导电层卷材)1上。其中,该光伏层10的电子传递层2以聚乙烯亚胺(Polyethylenimine,PEI)为主成分经狭缝涂布后,结构层厚度以0.5nm-10nm为佳﹔该光伏层10的主动层3可以是溶剂稀释的P3HT/PCBM、PCPDTBT/PCBM,其中P3HT/PCBM为有多个聚3-己烷基噻吩(poly(3-hexylthiophene),P3HT(p型材料))聚合物半导体及多个苯基-C61丁酸甲酯(phenyl-C61-butyric acid methylester,PCBM(n型材料))混合而成,以临二甲苯稀释后经狭缝涂布后,结构层厚度以100nm-500nm为佳。Please refer to FIGS. 1 a and 1 b , the photovoltaic layer of the photovoltaic cell structure of the present invention and the top view of FIG. 1 a . As shown in the figure: a photovoltaic cell structure of the present invention, the photovoltaic layer 10, including an electron transfer layer 2 and an active layer 3, are sequentially coated on a transparent conductive substrate (or a transparent conductive layer coil material) in sequence. )1 on. Wherein, the electron transport layer 2 of the photovoltaic layer 10 is coated with polyethyleneimine (PEI) as the main component, and the thickness of the structural layer is preferably 0.5nm-10nm; the active layer 3 of the photovoltaic layer 10 It can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is a polymer semiconductor with multiple poly(3-hexylthiophene), P3HT (p-type material)) and multiple benzene It is prepared by mixing phenyl-C61-butyric acid methylester (PCBM (n-type material)), and the thickness of the structural layer is preferably 100nm-500nm after being diluted with xylene and then slit coating.

另,该透明导电基板1包含有一透明基板11及一设于该透明基板11一侧面的下导电层12。其中该透明基板(或透明卷材)11任一侧或两侧更可设置一缓冲层(图中未示)以增加该透明基板11的强度或与该下导电层12的附着力。该缓冲层为亚克力、环氧树脂、二氧化硅或以上两种材料的组合。该透明基板11为透光塑料或透光玻璃基板,其中该透光塑料为酚醛树脂(Phenol Novolac,PN)、聚酰胺(Polyamide,PA)、聚酰亚胺(Polyimide,PI)、聚氨酯(Polyurethanes,PU)、聚乙烯(Polyethylene,PE)、聚乙烯对苯二甲酸酯(PolyethyleneTerephthalate,PET)、亚克力塑料等。在本图中,该透明基板11的厚度为10um-500um。In addition, the transparent conductive substrate 1 includes a transparent substrate 11 and a lower conductive layer 12 disposed on one side of the transparent substrate 11 . A buffer layer (not shown in the figure) can be provided on either side or both sides of the transparent substrate (or transparent roll material) 11 to increase the strength of the transparent substrate 11 or the adhesion with the lower conductive layer 12 . The buffer layer is acrylic, epoxy resin, silicon dioxide or a combination of the above two materials. The transparent substrate 11 is a transparent plastic or a transparent glass substrate, wherein the transparent plastic is phenolic resin (Phenol Novolac, PN), polyamide (Polyamide, PA), polyimide (Polyimide, PI), polyurethane (Polyurethanes) , PU), polyethylene (Polyethylene, PE), polyethylene terephthalate (PolyethyleneTerephthalate, PET), acrylic plastic and so on. In this figure, the thickness of the transparent substrate 11 is 10um-500um.

又,该下导电层12可经涂布、溅镀或蒸镀制成,该下导电层12为金属或金属氧化物,或是金属氧化物、金属和金属氧化物的多层组合,且该下导电层12透光率可以是70%-95%。又,在本图中,该下导电层12以利用一银浆为材料的引线(图中未示)与外部电性连接,该引线可经印刷制作为一排线接线区(图中未示)而成。In addition, the lower conductive layer 12 can be made by coating, sputtering or evaporation, the lower conductive layer 12 is metal or metal oxide, or a multi-layer combination of metal oxide, metal and metal oxide, and the The light transmittance of the lower conductive layer 12 may be 70%-95%. In addition, in this figure, the lower conductive layer 12 is electrically connected to the outside by a lead (not shown in the figure) made of silver paste, and the lead can be printed to form a wiring area (not shown in the figure). ) is made.

请参阅图2a、2b,为图1a在光伏层的电子传递层、主动层及下导电层进行第一蚀刻槽、第二蚀刻槽及第三蚀刻槽的切割侧视及图2a的俯视示意图。如图所示﹕本实用新型以一特定激光能量不破坏透明基板11方式,进行多条第一蚀刻槽(线)20的激光蚀刻,蚀刻该主动层3、该电子传递层2及下导电层12,以形成各该光伏单元,该些第一蚀刻槽20宽距为10um-500um。Please refer to FIGS. 2 a and 2 b , which are a side view of cutting the first etching groove, the second etching groove and the third etching groove in the electron transport layer, the active layer and the lower conductive layer of the photovoltaic layer in FIG. 1 a and the top view of FIG. 2 a . As shown in the figure: the present invention performs laser etching of a plurality of first etching grooves (lines) 20 in a manner that a specific laser energy does not damage the transparent substrate 11 to etch the active layer 3, the electron transfer layer 2 and the lower conductive layer 12. To form each of the photovoltaic units, the width of the first etching grooves 20 is 10um-500um.

再以,一特定激光能量不破坏该下导电层12方式,进行多条第二蚀刻槽(线)30及多条第三蚀刻槽(线)40的激光蚀刻,蚀刻该主动层3及该电子传递层2,以该第二蚀刻槽30所形成的贯通孔提供将来铺设电洞(空穴)传递层(上导电层)与该下导电层12电性连接,该些第二蚀刻槽30及该第三蚀刻槽40的宽距为10um-500um。在本图中,该第二蚀刻槽30为贯穿孔,该第三蚀刻槽40除了纵向切割外,也同时进行横向切割。Furthermore, in a manner that a specific laser energy does not damage the lower conductive layer 12, laser etching of a plurality of second etching grooves (lines) 30 and a plurality of third etching grooves (lines) 40 is performed to etch the active layer 3 and the electrons. The transfer layer 2 is provided with through holes formed by the second etching grooves 30 to provide electrical connection between the hole (hole) transfer layer (upper conductive layer) and the lower conductive layer 12 to be laid in the future. The second etching grooves 30 and The width of the third etching groove 40 is 10um-500um. In this figure, the second etching groove 30 is a through hole, and the third etching groove 40 is not only longitudinally cut, but also laterally cut.

请参阅图3a、3b,为图2a在第一蚀刻槽及第三蚀刻槽内部作绝缘层侧视及图3a的俯视示意图。如图所示﹕本实用新型于该些第一蚀刻槽20与该些第三蚀刻槽40内部各填充有一绝缘层5。在本图中,该些绝缘层5为UV胶、环氧树脂或蓝胶。Please refer to FIGS. 3 a and 3 b , which are a side view of the insulating layer in the first etching groove and the third etching groove in FIG. 2 a and a top view of FIG. 3 a . As shown in the figure, according to the present invention, an insulating layer 5 is filled in each of the first etching grooves 20 and the third etching grooves 40 . In this figure, the insulating layers 5 are UV glue, epoxy resin or blue glue.

请参阅图4a、4b,为图3a在主动层进行电洞传递层、串接导电层制作的侧视及图4a的俯视示意图。如图所示﹕本实用新型接着以印刷或遮罩的方式于前述已被蚀刻成多个小单元的该主动层3表面的特定区域上制作有一电洞传递层4,并且该电洞传递层4的材料可以经过第二蚀刻槽30填充后形成一串接导电层6,使该电洞传递层4、该串接导电层6与该下导电层12与下一个光伏单元电性连接。在图中,该电洞传递层4可以是经溶剂稀释的聚(3,4-亚乙基二氧噻吩)/聚对苯乙烯磺酸(PEDOT/PSS)为主成分,包含有多个EDOT(3,4-亚乙二氧噻吩单体)的聚合物及多个聚苯乙烯磺酸钠(sodium-p-styrenesulfonate,PSS)混合而成,如以醇类或极性溶剂(如乙醇)稀释后,结构层厚度以100nm-1um为佳,阻抗1-100Ω/□为佳。Please refer to FIGS. 4 a and 4 b , which are a side view of the hole transfer layer and a series-connected conductive layer in the active layer of FIG. 3 a and a top view of FIG. 4 a . As shown in the figure: the present invention then forms a hole transport layer 4 on a specific area of the surface of the active layer 3 that has been etched into a plurality of small units by printing or masking, and the hole transport layer The material of 4 can be filled by the second etching groove 30 to form a series conductive layer 6, so that the hole transfer layer 4, the series conductive layer 6 and the lower conductive layer 12 are electrically connected to the next photovoltaic unit. In the figure, the hole transport layer 4 can be a solvent-diluted poly(3,4-ethylenedioxythiophene)/poly-p-styrenesulfonic acid (PEDOT/PSS) as the main component, and contains a plurality of EDOTs (3,4-ethylenedioxythiophene monomer) polymer and multiple sodium-p-styrenesulfonate (PSS) mixed, such as alcohol or polar solvent (such as ethanol) After dilution, the thickness of the structural layer is preferably 100nm-1um, and the impedance is preferably 1-100Ω/□.

进一步,在于本实用新型可以于该电洞传递层6印刷局部的银浆材料为引线,以利与排线贴合电性连接。Further, in the present invention, the local silver paste material printed on the hole transfer layer 6 can be used as a lead, so as to facilitate the electrical connection with the wire.

再进一步,在本实用新型的该电洞传递层6表面上具光泽性或提供光反射、折射效果的反光层(图中未示)。Still further, on the surface of the hole transport layer 6 of the present invention, there is a glossy or reflective layer (not shown in the figure) that provides light reflection and refraction effects.

如此完成串接的光伏单元结构。串接的光伏单元结构可依各该产品元件需求再进一步裁切使用。据此本实用新型以电洞传递层4来取代过于传统上导电层的制作,可以减少在制作上导电层的相关工艺的繁复。如此可以缩小蚀刻槽的间隙设计,并且增加光电转换有效面积的利用,也可以没有电极导线的光遮蔽,增加光电反应区域。The photovoltaic cell structure connected in series is thus completed. The photovoltaic unit structure connected in series can be further cut and used according to the requirements of each product element. Accordingly, the present invention uses the hole transfer layer 4 to replace the traditional fabrication of the conductive layer, which can reduce the complexity of the related process of fabricating the conductive layer. In this way, the gap design of the etching groove can be narrowed, the utilization of the photoelectric conversion effective area can be increased, and the photoelectric reaction area can be increased without the light shielding of the electrode wires.

请参阅图5,为本实用新型的另一光伏电池封装结构实施例示意图。如图所示﹕本实用新型于该光电池封装结构的上下贴附有阻水阻气材料层7,该阻水阻气材料层7包含有一上阻水阻气层71、一下阻水阻气层72及一阻水阻气胶73,该上阻水阻气层71、72有50um-500um进行封装,以构成光伏电池元件。在本图中,该阻水阻气层71、72为透明塑料或玻璃基板。Please refer to FIG. 5 , which is a schematic diagram of another embodiment of the photovoltaic cell packaging structure of the present invention. As shown in the figure: the utility model is attached with a water and gas barrier material layer 7 on the top and bottom of the photovoltaic cell packaging structure, and the water and gas barrier material layer 7 includes an upper water and gas barrier layer 71 and a lower water and gas barrier layer. 72 and a water-blocking and gas-blocking adhesive 73, the upper water-blocking and gas-blocking layers 71 and 72 are encapsulated with 50um-500um to form photovoltaic cell elements. In this figure, the water and gas barrier layers 71 and 72 are transparent plastic or glass substrates.

当然,本实用新型还可有其它多种实施例,在不背离本实用新型精神及其实质的情况下,熟悉本领域的技术人员当可根据本实用新型作出各种相应的改变和变形,但这些相应的改变和变形都应属于本实用新型所附的权利要求的保护范围。Of course, the present utility model can also have other various embodiments, without departing from the spirit and essence of the present utility model, those skilled in the art can make various corresponding changes and deformations according to the present utility model, but These corresponding changes and deformations should all belong to the protection scope of the appended claims of the present invention.

Claims (17)

1. A photovoltaic cell structure, comprising:
a transparent conductive substrate including a transparent substrate and a lower conductive layer disposed on one side of the transparent substrate
An electronic transfer layer arranged on one side of the lower conductive layer
An active layer arranged on one side of the electronic transfer layer
Multiple first etching grooves penetrating the active layer, the electron transfer layer and the lower conductive layer to form multiple photovoltaic cells
Multiple second etching grooves penetrating the active layer and the electronic transfer layer
Multiple third etching grooves running longitudinally and transversely through the active layer and the electronic transfer layer
Multiple insulation layers arranged inside the first and third etching grooves
A hole transfer layer respectively disposed on specific areas of the surface of the active layer of the plurality of small cells etched
Multiple series-connected conductive layers arranged inside the second etching grooves for electrically connecting the hole transfer layer and the lower conductive layer.
2. The photovoltaic cell structure of claim 1, wherein the electron transport layer has a structural layer thickness of 0.5nm to 10 nm.
3. The photovoltaic cell structure of claim 1, wherein the active layer has a structure layer thickness of 100nm to 500 nm.
4. The photovoltaic cell structure of claim 1, wherein the thickness of the structural layer of the hole transport layer is between 100nm and 1 um.
5. The photovoltaic cell structure of claim 1, wherein the resistance of the hole transport layer is 1-100 Ω/□.
6. The photovoltaic cell structure of claim 1, wherein the surface of the hole transport layer further comprises a light reflecting layer.
7. The photovoltaic cell structure of claim 1, wherein the first etching trenches are 10um to 500 um.
8. The photovoltaic cell structure of claim 1, wherein the width of the second etching grooves and the width of the third etching grooves are 10um to 500 um.
9. The structure of claim 1, wherein the hole transport layer and the bottom conductive layer are electrically connected to a lead made of silver paste and an external electrical connection, and the lead is printed to form a wiring region.
10. The photovoltaic cell structure of claim 1, wherein the transparent conductive substrate is a roll of transparent conductive layer.
11. The photovoltaic cell structure of claim 1, wherein a buffer layer is disposed on one or both sides of the transparent substrate to increase the strength of the transparent substrate or the adhesion with the lower conductive layer.
12. The photovoltaic cell structure of claim 1, wherein the transparent substrate is a light-transmissive plastic or glass substrate.
13. The photovoltaic cell structure of claim 1, wherein the transparent substrate has a thickness of 10um to 500 um.
14. The photovoltaic cell structure of claim 1, wherein the lower conductive layer has a light transmittance of 70% to 95%.
15. The photovoltaic cell structure of claim 1, wherein the photovoltaic cell structure is packaged by attaching water-blocking and gas-blocking material layers on top and bottom of the photovoltaic cell structure to form a photovoltaic cell device.
16. The photovoltaic cell structure of claim 15, wherein the water-blocking gas barrier material layer comprises a water-blocking gas barrier layer, a water-blocking gas barrier layer.
17. The photovoltaic cell structure of claim 15, wherein the water-blocking gas barrier layer has a thickness of 50um to 500 um.
CN202020706153.9U 2020-04-23 2020-04-30 A photovoltaic cell structure Active CN212011029U (en)

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