CN218812077U

CN218812077U - Chemical vapor deposition system

Info

Publication number: CN218812077U
Application number: CN202222595527.6U
Authority: CN
Inventors: 刘丹增
Original assignee: Hangzhou Fuxin Semiconductor Co Ltd
Current assignee: Hangzhou Fuxin Semiconductor Co Ltd
Priority date: 2022-09-29
Filing date: 2022-09-29
Publication date: 2023-04-07
Anticipated expiration: 2032-09-29

Abstract

The embodiment of the application discloses chemical vapor deposition system, including host computer platform and driver board, the host computer platform is used for carrying out chemical vapor deposition, the driver board is used for moving the wafer extremely the host computer platform. The chemical vapor deposition system further comprises a wafer bearing chamber and a heating device. The wafer bearing cavity is used for containing wafers, and the heating device is used for heating the wafer bearing cavity, so that the surface condensation of the wafers in the wafer bearing cavity is prevented. According to the method, the heating device is additionally arranged on the upper wafer bearing cavity of the chemical vapor deposition system, so that the defect problem caused by condensation on the surface of the wafer can be greatly improved.

Description

Chemical vapor deposition system

Technical Field

The present application relates to the field of chemical vapor deposition, and more particularly to an improved chemical vapor deposition system.

Background

As thin films become thinner in sophisticated equipment, cvd systems must become faster and more efficient to maximize fab utilization, and new cvd systems, such as commercially available Producer GT stations, increase the ability to produce silicon wafers to a new level. The product can process up to 150 silicon wafers per hour, and the productivity is greatly improved, so that the production cost is reduced.

However, in the process of coating a wafer by using a chemical vapor deposition system, the wafer needs to be transferred to an upper layer of a Load lock (Load lock) after the coating of the reaction chamber (400 degrees celsius) is completed, and since the temperature of the surface of the wafer is rapidly reduced, the film on the surface of the wafer is easily condensed to cause defects, which affects the yield and is prone to cause downtime.

Disclosure of Invention

In view of the above problems, the embodiment of the present application adopts an improved chemical vapor deposition system, and reduces the defect problem caused by condensation on the surface of a wafer by adding a heating device to the upper wafer bearing chamber of the chemical vapor deposition system, thereby well improving the problems of the prior art.

Specifically, an embodiment of the present application provides a chemical vapor deposition system, which includes a main machine table, a driving machine table, and a heating device. The main machine table is used for carrying out chemical vapor deposition and is provided with a wafer bearing cavity for accommodating wafers; the driving machine is used for moving the wafer to the main machine; the heating device is used for heating the wafer bearing cavity, so that the surface of the wafer in the wafer bearing cavity is prevented from being condensed.

Optionally, in some embodiments of the present application, the heating device is disposed on the upper cover of the wafer carrying chamber.

Optionally, in some embodiments of the present application, the heating device is a heating plate.

Optionally, in some embodiments of the present application, the heating device is disposed inside the upper cover of the wafer carrying chamber.

Optionally, in some embodiments of the present application, the heating device is a heating wire.

Optionally, in some embodiments of the present application, the heating device is externally connected to the wafer carrying chamber through a conveying pipe, and the conveying pipe communicates the heating device and the wafer carrying chamber.

Optionally, in some embodiments of the present application, the heating device provides gas to the wafer carrying chamber.

Optionally, in some embodiments of the present application, the gas is nitrogen.

Optionally, in some embodiments of the present application, the temperature of the gas is between 70 degrees celsius and 120 degrees celsius.

Optionally, in some embodiments of the present application, the driving stage includes a robot arm for moving the wafer to the wafer carrying chamber.

In summary, the present application effectively solves the problems of the prior art through the above novel scheme, and does not increase much cost, and well improves the problem of the condensation on the wafer surface in accordance with the economic benefits, providing better efficiency in production.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following drawings in the description of the embodiments, which are used as needed, will be briefly introduced, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a top view of a chemical vapor deposition system according to a first embodiment of the present application.

FIG. 2 isbase:Sub>A cross-sectional view of the CVD system taken along line A-A of FIG. 1.

FIG. 3 is a top view of a chemical vapor deposition system according to a second embodiment of the present application.

FIG. 4 isbase:Sub>A cross-sectional view of the chemical vapor deposition system taken along line A-A of FIG. 3.

FIG. 5 is a top view of a chemical vapor deposition system according to a third embodiment of the present application.

FIG. 6 isbase:Sub>A cross-sectional view of the CVD system taken along line A-A of FIG. 5.

Description of reference numerals:

10: main machine table

12: upper cover

14. 26, 29: heating device

20: wafer bearing cavity

22: wafer

28: delivery pipe

30: driving machine table

32: mechanical arm

34: pivot part

100. 200 and 300: chemical vapor deposition system

Detailed Description

The disclosure has been described in detail with reference to the following examples, which are intended to be illustrative only, since various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the disclosure, and it is intended that the disclosure encompass all such modifications as fall within the true scope of the disclosure as defined by the appended claims. Throughout the specification and claims, unless the context clearly dictates otherwise, the words "a" and "an" include the word "a" or "an" and the like, including the word "a" or "an" and the word "the component or element. In addition, as used in this disclosure, the singular articles "a," "an," and "the" include plural referents or components unless the context clearly dictates otherwise. Also, as used in this description and throughout the claims that follow, the meaning of "in" may include "in" and "on" unless the content clearly dictates otherwise. The words used in the specification and claims have the ordinary meaning as is accorded to such words in the art, in the context of the disclosure herein and in the specific context unless otherwise indicated. Certain terms used to describe the disclosure are discussed below or elsewhere in this specification to provide additional guidance to the practitioner in describing the disclosure. The use of examples anywhere throughout the specification, including any examples of words discussed herein, is intended merely to be illustrative, and certainly not to limit the scope or meaning of the disclosure or any exemplary words. As such, the present disclosure is not limited to the various embodiments set forth in this specification.

As used herein, the term "about" or "approximately" shall generally mean within 20%, and preferably within 10%, of a given value or error. Further, the amounts provided herein can be approximate, meaning that the word "about" or "approximately" can be used if not expressly stated. When an amount, concentration, or other value or parameter is given a range, preferred range or table listing upper and lower desired values, it is to be understood that all ranges formed from any upper and lower pair of values or desired values is specifically disclosed, regardless of whether ranges are separately disclosed. For example, if a range of lengths from X cm to Y cm is disclosed, it should be understood that lengths of H cm are disclosed and H can be any real number in between X and Y.

Further, "electrically coupled" or "electrically connected" herein includes any direct and indirect electrical connection means. For example, if a first device is electrically coupled to a second device, that connection may be through a direct connection, or through an indirect connection via other devices and connections. In addition, if transmission and provision of electrical signals are described, persons skilled in the art should understand that attenuation or other non-ideal changes may be accompanied in the transmission process of electrical signals, but the source of electrical signal transmission or provision and the receiving end are not specifically described, and essentially the same signal should be considered. For example, if an electrical signal S is transmitted (or provided) from a terminal a of an electronic circuit to a terminal B of the electronic circuit, wherein a voltage drop may occur across the source and drain of a transistor switch and/or a possible stray capacitance, but this design is intended to achieve certain specific technical effects without deliberately using attenuation or other non-ideal changes that occur during transmission, the electrical signal S should be considered to be substantially the same signal at the terminals a and B of the electronic circuit.

It is understood that the terms "including," "having," "containing," and the like, as used herein, are open-ended terms that mean including, but not limited to. Furthermore, not all objects or advantages or features disclosed herein are necessarily achieved in any one embodiment or claim of the present application. In addition, the abstract and the title of the application are provided to assist the searching of the patent document and are not intended to limit the scope of the application.

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In this application, where the contrary is not intended, the use of directional words such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, particularly in the direction of the drawing figures, and "inner" and "outer" are relative to the outline of the device.

Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.

Referring to fig. 1 and 2 together, fig. 1 isbase:Sub>A top view ofbase:Sub>A chemical vapor deposition system 100 according tobase:Sub>A first embodiment of the present application, and fig. 2 isbase:Sub>A cross-sectional view of the chemical vapor deposition system 100 taken along linebase:Sub>A-base:Sub>A of fig. 1. As shown in fig. 1, the chemical vapor deposition system 100 includes a main stage 10, a driving stage 30, and a heating device 14. The main machine 10 is used for chemical vapor deposition, the driving machine 30 is used for moving the wafer 22 to the main machine 10, especially to a wafer Load lock (Load lock) 20 in the main machine 10, and the chemical vapor deposition system further includes a heating device 14. As shown in fig. 2, the wafer carrying chamber 20 is located inside the main machine table 10 and is used for accommodating a wafer 22. The heating device 14 is used to heat the wafer carrying chamber 20, so as to prevent the surface of the wafer located in the wafer carrying chamber 20 from being condensed. According to the method, the heating device is additionally arranged on the upper wafer bearing cavity of the chemical vapor deposition system, so that the defect problem caused by condensation on the surface of the wafer can be greatly improved. In the present embodiment, the heating device 14 is disposed on the lid 12 of the wafer carrying chamber 20, and may be a heating plate.

In addition, the driving platform 30 includes a robot 32 for moving the wafer 22 to the wafer loading chamber 20, and the robot 32 is pivotally connected to the driving platform 30 through a pivot 34. The driving machine 30 may be coupled to the commercial power to drive the robot 32. The robot 32 can transfer multiple silicon wafers simultaneously, thereby maximizing the throughput of chemical vapor deposition. The present application is directed to a silicon wafer transport component design that reduces defects while maintaining high throughput with a substantial reduction in particle contamination from mechanical motion. The chemical vapor deposition system 10 is redesigned to greatly improve product applicability and greatly reduce preventive maintenance time.

In another embodiment, the heating device 14 may include a controller and a heating unit, the controller may set a heating time of the heating unit, and the heating unit may be an electrical heating tube or a ceramic fiber electrical heating element for heating the wafer carrying chamber 20. Further, the controller may set the heating time and the constant temperature time of the heating unit such that the wafer carrying chamber 20 is maintained at the predetermined temperature for a period of time. For example, the preset temperature is 100 ℃, the controller sets the heating time to 15 minutes and the constant temperature time to 20 minutes, and controls the heating unit to heat to 100 ℃ within 15 minutes and maintain at 100 ℃ for 20 minutes.

The chemical vapor deposition system can support Plasma Enhanced Chemical Vapor Deposition (PECVD) of applied materials, and is suitable for the same type of CVD equipment, including the application of PECVD and SACVD technologies of AMAT, LAM and Tupiste. In addition, the robot 32 can transport at least four wafers simultaneously, which peaks the throughput of the CVD system. The paired chip bearing chambers can shorten the wafer operation time and improve the utilization rate of the reaction chamber. The design of the new system minimizes defects in the wafer handling assembly, achieving superior performance with reduced mechanical particles while maintaining high productivity.

According to the chemical vapor deposition system, the heating device is additionally arranged on the upper layer of the wafer bearing cavity of the chemical vapor deposition system, so that the temperature of the wafer bearing cavity is continuously kept at about 100 ℃. After the film coating of the reaction cavity is finished, the wafer is required to be transferred to the upper layer of the wafer bearing cavity and is not cooled rapidly, so that the formation of condensation defects on the surface of the wafer is effectively prevented.

Referring to fig. 3 and 4 together, fig. 3 isbase:Sub>A top view ofbase:Sub>A chemical vapor deposition system 200 according tobase:Sub>A second embodiment of the present application, and fig. 4 isbase:Sub>A cross-sectional view of the chemical vapor deposition system 200 taken along linebase:Sub>A-base:Sub>A of fig. 3. The difference between the present embodiment and the previous embodiments is that in the present embodiment, the heating device 29 is disposed inside the upper lid 12 of the wafer carrying chamber 20, and the heating device 29 may be a heating wire.

Referring to fig. 5 and 6 together, fig. 5 isbase:Sub>A top view ofbase:Sub>A chemical vapor deposition system 300 according tobase:Sub>A third embodiment of the present application, and fig. 6 isbase:Sub>A cross-sectional view of the chemical vapor deposition system 300 taken along linebase:Sub>A-base:Sub>A of fig. 5. The present embodiment differs from the previous embodiments in that in the present embodiment, the heating device 26 is externally connected to the wafer carrying chamber 20 through the delivery pipe 28, wherein the delivery pipe 28 communicates the heating device 26 and the wafer carrying chamber 20. Optionally, in some embodiments of the present application, the heating device 26 provides gas to the wafer carrying chamber 20. In some embodiments of the present application, the gas is nitrogen. Furthermore, in some embodiments of the present application, the temperature of the gas is between 70 and 120 degrees celsius, preferably 100 degrees celsius.

In summary, the heating device is additionally arranged on the upper layer of the wafer bearing chamber of the chemical vapor deposition system, so that the heating device continuously keeps the temperature of about 100 ℃. After the film coating of the reaction cavity is finished, the wafer is required to be transferred to the upper layer of the wafer bearing cavity and is not cooled rapidly, so that the formation of condensation defects on the surface of the wafer is effectively prevented. In particular, the heating device of the present application can be realized by the following three schemes: continuously supplying hot nitrogen to the wafer bearing chamber; a heating plate is additionally arranged on an upper cover of the wafer bearing cavity; and a heating wire is arranged in the upper cover of the wafer bearing chamber.

By additionally arranging the simple heating device on the upper layer of the wafer bearing cavity, the condensation defect caused by sudden drop of the surface temperature of the wafer can be effectively reduced, so that the wafer scrapping and downtime risks are reduced, and the huge loss in the production process can be avoided by only increasing the minimum equipment cost.

In summary, the present application effectively solves the above problems by the above novel scheme, without increasing much cost, and improves the efficiency of the chemical vapor deposition system well in accordance with economic benefits, providing better experience for users.

In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to the related descriptions of other embodiments. The embodiments described above are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present application, except for the design of the embodiments in the present application, which is consistent with the embodiments in the present application, belong to the protection scope of the present application.

The foregoing embodiments of the present application have been described in detail, and the principles and implementations of the present application are described herein with reference to specific examples, which are provided only to help understand the technical solutions and their core ideas of the present application. Those of ordinary skill in the art will understand that: it is to be understood that modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof, without departing from the scope of the technical solutions of the embodiments of the present application.

In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.

Claims

1. A chemical vapor deposition system, comprising:

a main machine table (10), wherein the main machine table (10) is used for carrying out chemical vapor deposition, and the main machine table (10) is provided with a wafer bearing chamber (20) for accommodating a wafer (22);

a drive station (30), the drive station (30) configured to move a wafer (22) to the main station (10); and

heating means for heating the wafer carrying chamber (20) so as to prevent condensation on the surface of a wafer (22) located in the wafer carrying chamber (20).

2. The chemical vapor deposition system of claim 1, wherein the heating device is disposed on a lid (12) of the wafer-carrying chamber (20).

3. The chemical vapor deposition system of claim 2, wherein the heating device is a heating plate.

4. The chemical vapor deposition system of claim 1, wherein the heating device is disposed inside a lid (12) of the wafer support chamber (20).

5. The chemical vapor deposition system of claim 4, wherein the heating device is a heating wire.

6. The chemical vapor deposition system of claim 1, wherein the heating device is externally connected to the wafer-holding chamber (20) by a duct (28), the duct (28) communicating the heating device with the wafer-holding chamber (20).

7. The chemical vapor deposition system of claim 6, wherein the heating device provides a gas to the wafer support chamber (20).

8. The chemical vapor deposition system of claim 7, wherein the gas is nitrogen.

9. The chemical vapor deposition system of claim 7, wherein the temperature of the gas is between 70 degrees Celsius and 120 degrees Celsius.

10. The chemical vapor deposition system of claim 1, wherein the drive stage (30) includes a robot arm (32) configured to move a wafer (22) to the wafer support chamber (20).