CN217903448U - Novel high temperature resistant frequency selection super surface structure - Google Patents

Abstract

The utility model discloses a novel high-temperature-resistant frequency-selective metasurface structure, which belongs to the technical field of new artificial electromagnetic materials, and includes a metal structure layer and a medium layer, the medium layer includes a medium upper layer and a medium lower layer, and the medium upper layer and the medium lower layer are arranged in parallel with each other. The metal structure layer is arranged between the upper layer of the medium and the lower layer of the medium, and the metal structure layer is respectively connected with the upper layer of the medium and the lower layer of the medium, and the metal structure layer is a Jerusalem cross structure. The novel high-temperature-resistant frequency-selective metasurface structure provided by the utility model can solve the technical problem that the dielectric properties of the frequency-selective metasurface structure cannot be maintained in a high-temperature environment, thereby failing to fully meet the requirements of the actual working environment.

Description

A Novel High Temperature Resistant Frequency Selective Metasurface Structure

technical field

The utility model belongs to the technical field of new artificial electromagnetic materials, and in particular relates to a novel high-temperature-resistant frequency-selective metasurface structure.

Background technique

Electromagnetic metasurface is the product of two-dimensional and planarization of electromagnetic metamaterials. It is composed of periodic or quasi-periodic sub-wavelength unit structures. It has efficient and flexible electromagnetic control capabilities and can be widely used in microwave, infrared, optical and other fields. . The frequency-selective wave-transparent surface is a kind of electromagnetic metasurface. For the regulation of the wave-transmission frequency, the frequency-selective wave-transparent surface has a transmission frequency selection function, which can transmit the electromagnetic wave in the required working band through the surface structure, reflect or absorb the work. Out-of-band electromagnetic waves are widely used in radome, spatial filter, reflector and other devices.

At present, the electromagnetic metasurface design technology is developing rapidly, and the electromagnetic control technology at room temperature has been gradually improved. However, the currently commonly used frequency-selective wave-transparent surface materials will undergo changes such as melting and deformation with the increase of temperature, so that the metasurface structure loses its original electromagnetic properties and cannot fully meet the needs of the actual working environment. Therefore, it is necessary to design a novel high-temperature-resistant frequency-selective metasurface structure.

Utility model content

The utility model provides a novel high-temperature-resistant frequency-selective metasurface structure, aiming at solving the technical problem that the dielectric properties of the existing frequency-selective metasurface structure cannot be maintained in a high-temperature environment, thereby failing to fully meet the requirements of the actual working environment.

For realizing above-mentioned object, the technical scheme that the utility model adopts is:

A novel high-temperature-resistant frequency-selective metasurface structure, including a metal structure layer and a dielectric layer, the dielectric layer includes a dielectric upper layer and a dielectric lower layer, the upper dielectric layer and the lower dielectric layer are arranged parallel to each other, and the metal structure layer is arranged between the upper dielectric layer and the lower dielectric layer, And the metal structure layer is respectively connected with the medium upper layer and the medium lower layer, and the metal structure layer is a Jerusalem cross structure.

Preferably, the unit structure period length of the metal structure layer is p=6mm, the thickness d=0.4mm, the length a of the Jerusalem cross structure is a=5mm, the width b=2.2mm, the metal line width w=0.3mm, and the thickness of the metal structure layer is t = 0.02mm.

Preferably, the thickness d1 of the upper layer of the medium is the same as the thickness of the lower layer d2 of the medium.

Further preferably, d1=d2=0.2mm.

Preferably, the material of the metal structure layer is solid metal tungsten.

Preferably, the upper dielectric layer and the lower dielectric layer are made of aluminum nitride ceramics.

Compared with the prior art, the utility model has the beneficial effects of:

(1) The novel high-temperature-resistant frequency-selective metasurface structure provided by the utility model can realize The movement of working frequency and the change of working intensity are highly adjustable for frequency and efficiency.

(2) The structure of the utility model has high temperature resistance, and the X-band reflection performance and K-band transmission performance are stable in the environment of room temperature to 900°C.

(3) The structure of the utility model has anti-oxidation ability, and the electromagnetic parameters remain stable after the temperature is reduced for 10 minutes at 900°C.

Description of drawings

Fig. 1 is a schematic structural diagram of a high-temperature-resistant frequency-selective metasurface structure in a decomposed state provided by an embodiment of the present invention.

FIG. 2 is a schematic structural diagram of a metal layer in an embodiment of the present invention.

Fig. 3 is a right side sectional view of the high temperature resistant frequency selective metasurface structure provided by the embodiment of the present invention.

Fig. 4 is a sample diagram of a 20×20 structural unit of the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the utility model.

Fig. 5 is a simulation curve diagram of S parameters at different temperatures for the high temperature resistant frequency selective metasurface structure provided by the embodiment of the present invention.

Fig. 6 is a test curve of transmittance at different temperatures of the high temperature resistant frequency selective metasurface structure provided by the embodiment of the present invention.

Fig. 7 is the current distribution diagram of the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the present invention at different frequencies under the environment of 900°C and the incidence of y-polarized electromagnetic waves;

Among them, Figure 7(a) is a distribution diagram of the current at 9.45GHz along the y component; Figure 7(b) is a distribution diagram of the current at 15.10GHz along the y component;

In the figure: 1. The upper layer of the medium; 2. The metal structure layer; 3. The lower layer of the medium.

Detailed ways

In order to illustrate the embodiment of the utility model and its design scheme more clearly, the accompanying drawings required by the embodiment will be briefly introduced below. The drawings in the following description are only part of the embodiments of the present utility model, and those skilled in the art can also obtain other drawings according to these drawings without creative work.

Example 1

As shown in Figures 1 to 4, the novel high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the present invention includes a metal structure layer 2 and a dielectric layer, the dielectric layer includes a dielectric upper layer 1 and a dielectric lower layer 3, and a dielectric upper layer 1 and a dielectric layer The lower layers 3 are arranged parallel to each other, the metal structure layer 2 is arranged between the upper dielectric layer 1 and the lower dielectric layer 3, and the metal structure layer 2 is connected to the upper dielectric layer 1 and the lower dielectric layer 3 respectively, and the metal structure layer 2 is Jerusalem cross structure, the embodiment of the utility model designs the metal structure layer as a special Jerusalem cross structure. Since the equivalent circuit model of the metal Jerusalem cross structure has capacitance, inductance and resistance, the special size parameters of the Jerusalem cross structure The design can change the equivalent capacitance value and inductance value of the metasurface structure to realize the control of frequency selective resonance frequency.

The preparation method of the novel high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the utility model includes the following steps:

(1) Forming the dielectric lower layer 3 by laminating green ceramic sheets;

(2) Printing the metal structure layer 2 on the surface of the medium lower layer 3 through a printing screen process;

(3) The upper dielectric layer 1 is obtained by laminating and covering the surface of the metal structure layer 2 and the lower dielectric layer 3 with green ceramic sheets, and finally sintered to obtain a new high-temperature-resistant frequency-selective metasurface structure. In the novel high-temperature-resistant frequency-selective metasurface structure obtained in the embodiment of the present utility model, there is no gap between the upper dielectric layer 1 and the lower dielectric layer 3, which is an integrated structure, and the metal structure layer 2 is arranged in the interlayer between the upper dielectric layer 1 and the lower dielectric layer 3 middle.

The above-mentioned preparation process of the embodiment of the utility model is an existing process, and for details, reference may be made to the preparation process of co-fired ceramics in the invention patent with publication number CN109053196B.

The unit structure period length of the metal structure layer 2 is p=6mm, the thickness d=0.4mm, the length a=5mm of the Jerusalem cross structure, the width b=2.2mm, the metal line width w=0.3mm, and the thickness t of the metal structure layer 2= 0.02mm.

The thickness d1 of the dielectric upper layer 1 is the same as the thickness d2 of the dielectric lower layer 3 . d1 = d2 = 0.2 mm.

The material of the metal structure layer 2 is solid metal tungsten. The melting point of solid metal tungsten is greater than 3000°C, and the conductivity is 1.88×10 ⁷ S/m. Within 900°C, the sandwich structure can resist oxidation and maintain good metal conductivity.

The materials of the upper dielectric layer 1 and the lower dielectric layer 3 are aluminum nitride ceramics.

The embodiment of the utility model tests the electromagnetic properties of the upper dielectric layer 1 and the lower dielectric layer 3 at different temperatures. It is obtained by cutting into the dimensions required by the X and Ku bands for waveguide testing. The test results are:

The dielectric upper layer 1 and the dielectric lower layer 3 have a relative permittivity of 7.8±0.1 and a dielectric loss tangent of 0.006±0.002 at room temperature within the range of 8-18GHz.

The dielectric upper layer 1 and the dielectric lower layer 3 have a relative permittivity of 7.8±0.1 and a dielectric loss tangent of 0.012±0.002 in the range of 300°C and 8-18GHz.

The dielectric upper layer 1 and the dielectric lower layer 3 have a relative permittivity of 7.8±0.1 and a dielectric loss tangent of 0.014±0.003 in the range of 600° C. and 8-18 GHz.

The dielectric upper layer 1 and the dielectric lower layer 3 have a relative permittivity of 7.8±0.1 and a dielectric loss tangent of 0.027±0.003 in the range of 900°C and 8-18GHz.

The test results of the above electromagnetic properties show that the dielectric parameters of the medium remain relatively stable with temperature changes.

In order to verify the effect of the novel high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the utility model, simulation and experimental verification are carried out below.

Fig. 5 is the S-parameter curves of the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the present invention at different temperatures when linearly polarized waves are incident. The simulation process is carried out in the CST microwave studio, where S11 represents the reflection curve, and S21 represents the transmission curve. During the change process from room temperature to 900°C, the S parameter curve does not change significantly, which illustrates the stability of the frequency selection of the high temperature resistant frequency selection metasurface structure provided by the embodiment of the present invention at high temperature, that is, the X-band reflection and the K-band transmission.

Fig. 6 is a test curve of transmittance of y-polarized wave incidence at different temperatures of the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the present invention. During the test, the structural sample was placed in a quartz heating box, and the transmittance test was performed at room temperature, 300°C, 600°C and 900°C temperature test points for 10 minutes, and the test curve results at different temperatures were similar, which verified the The simulation results and the design theory prove that the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the utility model has anti-oxidation ability, and the electromagnetic parameters remain stable in a high-temperature environment.

In addition, as shown in Figure 7, the current distribution results at different frequencies of the high-temperature-resistant frequency-selective metasurface structure provided by the embodiment of the utility model are shown in Figure 7 under the environment of 900 ° C and the incidence of y-polarized electromagnetic waves. It can be seen that when the frequency is 15.1GHz (operating frequency), the surface current distribution of the high-temperature-resistant frequency-selective metasurface structure is strong, reflecting a strong resonance effect; and when the frequency is 9.45GHz (non-operating frequency), the high-temperature-resistant The surface current distribution of the frequency selective metasurface structure is weak, and the metasurface has no wave-transmitting effect at this time. At the same time, when the frequency is 15.1 GHz, the current is mainly distributed on the y-axis, corresponding to the y-polarized incident (no current on the x-axis), indicating that the high-temperature-resistant frequency-selective metasurface structure plays a good role in transmission.

Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and modifications, the scope of the present invention is defined by the claims and their equivalents.

Claims (6)

1. A new type of high temperature resistant frequency selective metasurface structure, including a metal structure layer (2) and a dielectric layer, the dielectric layer includes a dielectric upper layer (1) and a dielectric lower layer (3), a dielectric upper layer (1) and a dielectric lower layer (3) Arranged parallel to each other, the metal structure layer (2) is arranged between the upper dielectric layer (1) and the lower dielectric layer (3), and the metal structure layer (2) is connected to the upper dielectric layer (1) and the lower dielectric layer (3) respectively, the The feature is that the metal structure layer (2) is a Jerusalem cross structure. 2. novel high-temperature resistant frequency selective metasurface structure as claimed in claim 1, is characterized in that, the unit structure periodic length p=6mm of described metal structure layer (2), thickness d=0.4mm, the length of Jerusalem cross structure a=5mm, width b=2.2mm, metal line width w=0.3mm, thickness t=0.02mm of the metal structure layer (2). 3. The novel high temperature resistant frequency selective metasurface structure according to claim 1, characterized in that the thickness d1 of the upper dielectric layer (1) is the same as the thickness d2 of the lower dielectric layer (3). 4. The novel high temperature resistant frequency selective metasurface structure according to claim 3, characterized in that d1=d2=0.2mm. 5. The novel high temperature resistant frequency selective metasurface structure according to claim 1, characterized in that the metal structure layer (2) is made of solid metal tungsten. 6. The novel high-temperature-resistant frequency-selective metasurface structure according to claim 1, characterized in that the materials of the upper dielectric layer (1) and the lower dielectric layer (3) are aluminum nitride ceramics.

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