Detailed Description
An embodiment provides a package, comprising: a stack in the upper layer, the stack comprising an insulating layer and a conductive element; an element made of plastic resting on the stack and defining a first cavity; and an antenna comprising a first conductive track in the stack and a second conductive track on a sidewall of the first cavity of the element.
Another embodiment provides a method for manufacturing a package, the method including, in order to form an upper layer: forming a stack comprising an insulating layer and a conductive element, and comprising a first conductive track forming part of an antenna; forming an element made of plastic, the element resting on said stack and defining a first cavity between the element and the stack; and forming a second electrically conductive track resting on the wall of the element.
According to one embodiment, the first cavity is filled with a first material having a dielectric constant of less than 20.
According to one embodiment, the package defines a second cavity surrounding the first cavity.
According to one embodiment, the second cavity is separated from the first cavity by a wall that extends the full height of the first cavity and rests on the stack.
According to one embodiment, the second cavity comprises a third conductive track extending along at least one sidewall of the second cavity.
According to one embodiment, the third electrically conductive track comprises a first portion extending from the stack on the second wall of the element and a second portion extending on the bottom of the second cavity.
According to one embodiment, the second portion of the third conductive track is coplanar with the plane of the second conductive track.
According to one embodiment, the second portion of the third conductive track extends in a different plane to the plane of the second conductive track.
According to one embodiment, the third electrically conductive track is electrically coupled to the first electrically conductive track.
According to one embodiment, the second cavity is filled with a second material different from the first material filling the first cavity.
According to one embodiment, the method comprises, after forming the component, filling the first cavity and the second cavity with a first material and a second material, respectively.
According to one embodiment, the package comprises a lower layer attached to the upper layer and defining a third cavity between the upper layer and the lower layer.
According to an embodiment, the package comprises a fourth electrically conductive track extending into the stack between the first electrically conductive track and the third cavity.
According to one embodiment, the element is made of a thermoplastic material doped with a non-conductive inorganic metal compound.
According to one embodiment, the element is formed by a laser direct structuring method.
Like features are denoted by like reference numerals throughout the various figures. In particular, structural and/or functional features that are common in various embodiments may have the same references and may be arranged with the same structural, dimensional, and material characteristics.
For the sake of clarity, only the operations and elements useful for understanding the embodiments described herein are shown and described in detail.
Unless otherwise specified, when two elements are referred to as being connected together, this means no direct connection of any intervening elements other than conductors, and when two elements are referred to as being coupled together, this means that the two elements may be connected or that they may be coupled via one or more other elements.
In the following disclosure, unless otherwise indicated, when referring to absolute positional qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative positional qualifiers, such as the terms "above", "below", "higher", "lower", etc., or to orientation qualifiers, such as "horizontal", "vertical", etc., reference is made to the orientation shown in the drawings.
Unless otherwise indicated, the expressions "about", "approximately", "substantially" and "approximately" mean within 10%, and preferably within 5%.
FIG. 1 is a cross-sectional view of one embodiment of an electronic device 10. The device 10 is an antenna device, more specifically an antenna in a package ("AiP").
Device 10 includes an integrated circuit chip 12. The chip 12 is located in a package. Thus, the chip 12 is protected by the package. An antenna 14 is coupled to the chip 12 to allow the chip to transmit or receive signals through the antenna 14.
The package includes, for example, a support (lower layer) 16. The support 16 is, for example, a semiconductor substrate comprising, for example, electronic components or a stack of insulating layers comprising electrically conductive tracks.
The package also includes an upper layer 18. The upper layer 18 and the lower layer 16 are attached to each other by a conductive element 20. For example, the upper layer 18 and the lower layer 16 are soldered together by solder balls to form the sidewalls of the package. The solder balls allow, for example, electrical connection of the lower layer to the upper layer. Thus, a cavity 22 in which the chip 12 is located is defined between the lower and upper layers and within the metal ring formed by the conductive element 20.
Alternatively, the chip 12 may be located at another location in the package. For example, the chip 12 may be located in the stack 24, in other words, consist of the layers of the stack 24.
The upper layer 18 includes a stack 24 of layers. For example, the stack 24 constitutes an interconnection network comprising insulating layers and conductive tracks. For example, the stack 24 includes insulating or dielectric layers, such as insulating or dielectric layers of different dielectric materials. For example, the stack 24 includes a lower layer 26 of a first dielectric material, i.e., closest to the lower layer 16. The stack 24 includes an intermediate layer 28 that rests on the layer 26 of the second dielectric material. The second material is preferably different from the first material. The stack 24 includes an upper layer 30 that rests on, for example, the layer 28 of the first dielectric material.
For example, the stack 24 includes a metal post 32 that is flush with the underside of the insulating layer closest to the support 16, i.e., the layer closest to the cavity 22. The support 16 includes a metal post 34 flush with its upper surface (i.e., the face closest to the cavity 22), the metal post 34 being located opposite the post 32. Studs 32 and 34 allow electrical connection of the upper and lower layers via balls 20. For example, a ball 20 is located between each post 32 and a corresponding post 34.
The antenna 14 includes an antenna structure including, for example, one or more metal layers 36 or metal tracks in the stack 24, preferably between the upper layers 30. In the example shown in fig. 1, only one layer 36 is shown. The layer 36 is coupled to the chip 12, for example via conductive tracks 38 located in the stack 24. This allows the chip 12 to activate the layer 36 to transmit or receive signals. Layer 36 is also coupled to ground, for example, via rails 38.
For example, the stack 24 comprises a metal track 40 surrounded by the lower layer 26, the metal track 40 extending opposite the chip 12, preferably opposite the entire chip 12. The tracks 40 form a protective shield for the chip 12. Track 40 is located between layer 36 and chip 12. According to another embodiment, where the chip 12 is not located opposite the layer 36, the track 40 may not be present.
The upper layer 18 also includes an upper element 42. The element 42 rests on the stack 24. The element 42 includes a base 50. The base 50 is for example planar. The base 50 extends opposite the stack 24, preferably opposite the entire stack 24. Element 42 also includes walls 48 and 52. Walls 48 and 52 are located between base 50 and stack 24. More specifically, base 50 rests on walls 48 and 52. Thus, the base is supported by the walls 48 and 52, and the walls 48 and 52 rest on the stack 24.
The element 42 is made of a plastic material. The element 42 is made, for example, of a thermoplastic material doped with a non-conductive metallic inorganic compound. The element 42 is made of a hard plastic based on epoxy, for example. The element 42 includes a base 50 and walls 48 and 52 and is preferably formed as a single unit constituting a cover.
The element 42 defines an internal cavity 44. Once the element 42 is attached to the stack, the cavity 44 is a closed cavity, i.e. a cavity that is enclosed on all sides. The cavity 44 is preferably central. The cavity 44 preferably faces the protective layer 40. Layer 40 is preferably between chip 12 and cavity 44. The cavity 44 preferably faces the layer 36.
The cavity 44 is defined by the base 50 and the stack 24 in a first direction (e.g., a vertical direction) and by the wall 48 in a plane orthogonal to a first dimension (e.g., a horizontal plane). The base 50 forms the bottom of the cavity. The wall 48 surrounds the cavity 44.
In the embodiment of fig. 1, the element 42 also defines a closed cavity 46. The cavity 46 preferably extends around the cavity 44. The cavity 46 preferably forms a ring around the cavity 44. The cavity 46 is separated from the cavity 44 by a wall 48.
The cavity 46 is defined by the base 42 and the stack 24 in a first direction (e.g., a vertical direction) and by walls 48 and 52 in a plane orthogonal to a first dimension (e.g., a horizontal plane). The wall 52 surrounds the cavity 46. The base 50 forms the bottom of the cavity. The cavity 46 surrounds a wall 48. The wall 52 thus forms an outer side wall of the element 42. The wall 52 is preferably coplanar with the side walls of the stack 24.
In the example of fig. 1, the base 50 has a substantially constant thickness. Thus, according to the embodiment of FIG. 1, the heights of cavities 44 and 46 are substantially equal.
The element 42 is attached to the stack 24. For example, the element 42 is attached to the stack 24 by a not shown adhesive layer.
In addition to layer 36, antenna 14 includes a conductive layer or track (patch) 54 located on base 50 in cavity 44. Layer 54 is preferably made of metal. Layer 54 is located opposite a portion of layer 36 or, more generally, the collection of layers 36 forms the excitation portion of the antenna. Layer 54 allows the transmission of the antenna's signal obtained by excitation of layer 36. Layer 54 is electrically isolated, particularly from layer 36. In other words, layer 54 is not in contact with any conductive elements, and in particular is not electrically coupled with layer 36.
According to the embodiment of fig. 1, the antenna 14 includes a secondary partially conductive layer or track 58 that participates in antenna excitation. Secondary portion 58 is preferably a metal layer, preferably the same metal as layer 36. The secondary portion 58 extends above the element 42 into the cavity 46. The secondary portion 58 forms a conductive ring around the cavity 44. Thus, the secondary portion 58 extends above the wall of the cavity 46. The secondary portion 58 extends from the stack 24 the height of one of the walls 48, 52, preferably the entire height of the wall 52. The secondary portion 58 preferably extends into the cavity 46 over at least a portion of the base 50 (i.e., the bottom of the cavity 46, preferably in the plane of the layer 54). Thus, the cross-sectional view of the secondary portion 58 is preferably L-shaped. Thus, the secondary portion preferably includes a leg (leg) directed toward the stack 24, and a leg directed toward the layer 54, e.g., coplanar with the layer 54.
The secondary portion 58 is coupled to the layer 36 by at least one conductive element 60 (e.g., at least one conductive via or conductive ring). At least one conductive element 60 extends through one or more insulating layers of stack 24 so as to reach layer 36. In other words, at least one conductive element 60 is in contact with layer 36 and extends to the upper surface of stack 24. The secondary portion 58 rests in contact with an element 60, which element 60 is flush with the upper surface of the stack 24.
The cavity 44 is filled with a material 56. The material has a dielectric constant of, for example, less than 20, preferably less than 10, more preferably less than 3, for example greater than 1. The material 56 is, for example, air.
The cavity 46 is filled with a second material 47, preferably different from the first material filling the cavity 44. The dielectric constant of the second material is for example less than 20, preferably less than 10, more preferably less than 3, for example more than 1. The material 47 is, for example, air. Alternatively, material 47 may be the same material as material 56. Alternatively, material 47 may be a conductive material.
The substrate 50 preferably has a thickness of less than 100 μm, preferably less than 50 μm. Preferably, the base 50 is as thin as possible while avoiding deformation of the element 42. The wall 48 extending from the base 50 to the stack 24 provides a stabilizer and ensures that the base 50 does not deform.
The layer 54 has a thickness of, for example, between 5 μm and 30 μm. Layer 58 has, for example, the same thickness as layer 54. Layer 58 has a thickness of, for example, between 20 μm and 50 μm.
Layer 36 and layer 40 are separated by a distance of between 250 μm and 400 μm, for example, substantially equal to 350 μm. The distance between layer 54 and layer 36 depends, for example, on the wavelength range transmitted or received by antenna 14. For example, for a signal having a frequency substantially equal to 60GHz, the distance between layer 54 and layer 36 is substantially equal to 400 μm. Preferably, the distance between layer 54 and layer 36 is greater than 150 μm, for example greater than 200 μm.
The distance between layer 54 and layer 36 is an important characteristic of the antenna package. In practice, the distance between layer 54 and layer 36 must be sufficiently high to allow layer 54 to radiate the transmission signal. Layer 54 and layer 36 are further separated by a material having properties, particularly dielectric constant, to allow for efficient signal routing.
The material layer filling the cavity 44 on the stack may be selected and a layer 54 formed on the layer. However, it may not be possible to precisely select the thickness of the layer depending on the manner of use.
Fig. 2 is a cross-sectional view of another embodiment of an electronic device 61.
The device 61 differs from the device 10 of fig. 1 in that the thickness of the base 50 facing the cavity 46 is different from the thickness of the base 50 facing the cavity 44, preferably greater than the thickness of the base 50 facing the cavity 44. In other words, the height of the cavity 46 is less than the height of the cavity 44. The upper surface of base 50, i.e., the surface furthest from cavities 44 and 46, is planar.
Layers 54 and 58 are located in their respective cavities as described in connection with fig. 1. Layer 58 includes legs that extend above wall 52 and legs that extend above base 50 and therefore are not in the same plane as layer 54.
According to another embodiment, the legs of layer 58 extending above base 50 are coplanar with layer 54, and the thickness of cavity-facing 46 of base 50 is different from the thickness of cavity-facing 44 of base 50, preferably greater than the thickness of cavity-facing 44 of base 50.
Fig. 3 is a cross-sectional view of another embodiment of an electronic device 70.
The device 70 differs from the embodiment of fig. 1 and 2 in that the device 70 does not include the cavity 46. Thus, the elements 42 form a single cavity 44. The cavity 44 includes a layer 54 and a material 56, as described with respect to fig. 1. The walls 48 that laterally surround the cavities 44 form the sidewalls of the elements 42 and, thus, a portion of the sidewalls of the upper layer 18. Thus, element 42 corresponds to a block comprising a single cavity corresponding to cavity 44. The wall 48 is thus coplanar with the sidewalls of the stack 24.
The stack 24 preferably does not include the conductive element 60. The antenna 14 does not include the secondary portion 58.
Fig. 4 is a cross-sectional view of another embodiment of an electronic device 80.
The device 80 differs from the embodiment of fig. 1 in that the secondary portion 58 is not present in the cavity 46. Thus, the cavity 46 only comprises the material 47.
As in the embodiment of fig. 3, the conductive element 60 is not present.
Fig. 5 is a cross-sectional view of another embodiment of an electronic device 90.
The device 90 differs from the embodiment of fig. 1 in that the layer 54 is located on the upper surface of the base 50, i.e. the upper surface of the element 42. Layer 54 is located opposite cavity 44. The layer 54 has a size, for example in a horizontal plane, that is less than or equal to the size of the cavity 44. Thus, the cavity 44 is filled only with the material 56. Thus, the secondary portion 58 lies in a plane different from the plane comprising the layer 54. In particular, the legs of the secondary portion 58 resting on the base 50 are not coplanar with the layer 54.
FIG. 6 illustrates an example method for making a portion of the embodiment of FIG. 1. More specifically, FIG. 6 includes four cross-sectional views A, B, C and D, each illustrating a step in a method for making a portion of the embodiment of FIG. 1. The steps shown by views A, B, C and D are preferably continuous.
View a of fig. 6 shows the step of forming the element 42 or cap. Preferably, the element 42 is formed by injecting the material comprising the element 42 into a mold having the desired shape of the element 42. The injection is accomplished, for example, by a syringe or by a suitable element, for example, as part of the machine used to manufacture the element 42. The material of which the element 42 is comprised is preferably in liquid form during injection. The material is then brought to the solid phase, for example by heat treatment, i.e. by increasing its temperature. The mold is then removed.
The material of which the element 42 is made is plastic. The material constituting the element 42 is preferably a material compatible with a Laser Direct Structuring (LDS) method, in other words, a thermoplastic material doped with a non-conductive metallic inorganic compound.
View B of fig. 6 shows laser activation of layer locations 54 and 58 to produce a metallized substrate for these locations.
During the step shown in view C of fig. 6, the component 42 is placed in an electroless plating bath composition. As a result, layers 54 and 58 are formed at the locations activated in the step of view B of fig. 6.
Alternatively, the activated position is larger than layers 54 and 58 in view B of the step of fig. 6. Thus, the step of view C of fig. 6 allows for the formation of a metal layer having dimensions greater than the dimensions of layers 54 and 58. These layers are then etched to form layers 54 and 58.
In the step of view D of fig. 6, cavities 44 and 46 are filled with materials 56 and 47, respectively. For example, the material is deposited in the chamber in liquid form and solidified, for example, by a thermal treatment (annealing) step.
In a subsequent step, not shown, the element 42 is attached to the stack 24.
Fig. 6 illustrates the fabrication of the embodiment of fig. 1. However, the described method is applicable to the embodiments of fig. 2 to 5 by modifying the shape of the mold shown in view a of fig. 6 and by modifying the laser activation position of the step in view B of fig. 6.
Steps B and C of fig. 6, which correspond to the direct laser structuring method, can be replaced by other metal layer deposition steps, such as sputtering steps or spraying steps. The material of the element 42 may then be different from the material discussed in connection with view a of fig. 6. The element 42 may then be made of any plastic material suitable for forming the element 42 and for depositing a metal layer.
An advantage of the described embodiment is that the distance between the radiating conductive layer 54 (otherwise referred to as a "patch") and the active layer 36 can be better controlled. It is therefore advantageously possible to reduce this distance in order to reduce the size of the package, while maintaining a sufficient distance for the operation of the antenna.
Another advantage of the described embodiment is that it allows the layers 54 and 36 to be separated by the material 56 independent of the type of structure. In fact, the structure is retained by the plastic element or cap 42 and the strength of the material 56 does not affect the strength of the package.
Another advantage of the described embodiment is that the material 47 surrounding layer 58 and the material 56 surrounding layer 54 can be chosen to be different from each other.
Various embodiments and modifications have been described. Those skilled in the art will appreciate that certain features of these embodiments may be combined, and that other variations will readily occur to those skilled in the art.
Finally, the practical implementation of the embodiments and variants described herein is within the abilities of one of ordinary skill in the art based on the functional description provided above.