CN215818097U

CN215818097U - Radio frequency power amplifying circuit, transmitting module, communication equipment and communication system

Info

Publication number: CN215818097U
Application number: CN202121930892.7U
Authority: CN
Inventors: 祁威; 龙华
Original assignee: Shenzhen Volans Technology Co Ltd
Current assignee: Shenzhen Volans Technology Co Ltd
Priority date: 2021-08-17
Filing date: 2021-08-17
Publication date: 2022-02-11
Anticipated expiration: 2031-08-17
Also published as: WO2023020095A1

Abstract

The application relates to a radio frequency power amplifying circuit, a transmitting module, communication equipment and a communication system. Wherein the radio frequency power amplification circuit includes: the primary side of the transformer comprises a first power amplifier end, a second power amplifier end and a middle tap, the middle tap is connected with a power supply, and the secondary side of the transformer comprises a power output end and a reference end; the first capacitor module is bridged between the reference end and the ground, and the capacitance variation range of the first capacitor module comprises a first capacitance value and a second capacitance value; and the second capacitor module is bridged between the power output end and the ground, and the capacitance variation range of the second capacitor module comprises a third capacitance value and a fourth capacitance value.

Description

Radio frequency power amplifying circuit, transmitting module, communication equipment and communication system

Technical Field

The application belongs to the field of communication equipment, and particularly relates to a radio frequency power amplifying circuit, a transmitting module, communication equipment and a communication system.

Background

5GNR is short for 5G New Radio, and is the most popular research and development focus in the communication industry today. The integration of radio frequency devices in 5G communication is an important development trend, and a module with higher integration level is the core of a 5G radio frequency scheme. The radio frequency front end module integrates two or more than two discrete devices such as a radio frequency power amplifier, a switch, a low noise amplifier, a filter, a duplexer and the like into one module, thereby improving the integration level and performance and miniaturizing the volume.

Currently, in general, different frequency ranges such as MB: 1.7GHz-2.1GHz, HB: 2.3GHz-2.7GHz, two different complete power amplification circuits are required. Thus, the area is large, and integration is not facilitated.

Disclosure of Invention

Based on this, the present application provides a radio frequency power amplifying circuit, comprising: the primary side of the transformer comprises a first power amplifier end, a second power amplifier end and a middle tap, the middle tap is connected with a power supply, and the secondary side of the transformer comprises a power output end and a reference end; the first capacitor module is bridged between the reference end and the ground, and the capacitance variation range of the first capacitor module comprises a first capacitance value and a second capacitance value; and the second capacitor module is bridged between the power output end and the ground, and the capacitance variation range of the second capacitor module comprises a third capacitance value and a fourth capacitance value.

Optionally, the first capacitor module may include: a first capacitor having the first capacitance value; a second capacitor having the second capacitance value; the second capacitance module comprises: a third capacitor having a capacitance value of the third capacitance value; and the capacitance value of the fourth capacitor is the fourth capacitance value.

Optionally, the radio frequency power amplifying circuit further includes: a first selection switch connected to the first capacitor and the second capacitor; a second selection switch connected to the third capacitor and the fourth capacitor.

Further, the radio frequency power amplifying circuit further includes: the first power amplifier is connected with the first power amplifier end; a second power amplifier. And the second power amplifier end is connected with the first power amplifier end.

Further, when the radio frequency power amplifying circuit works under a first frequency, the capacitance value of the first capacitor module is controlled to be a first capacitance value, and the capacitance value of the second capacitor module is controlled to be a third capacitance value; when the circuit works at the second frequency, the capacitance value of the first capacitor module is controlled to be the second capacitance value, and the capacitance value of the second capacitor module is controlled to be the fourth capacitance value.

Further, the first frequency is within a range of 1.7GHz-2.1 GHz; the second frequency is within a range of 2.3GHz-2.7 GHz.

Further, the radio frequency power amplifying circuit is used for 5G communication.

The application also provides a transmitting module which comprises any one of the radio frequency power amplifying circuits.

The application also provides a communication device, which comprises any one of the radio frequency power amplifying circuits or any one of the transmitting modules.

The application also provides a communication system, which comprises any one of the radio frequency power amplifying circuits or any one of the transmitting modules.

The radio frequency power amplifying circuit, the transmitting module, the communication equipment and the communication system are utilized. The capacitance module with variable capacitance can be connected to the secondary coil of the transformer. And when the radio frequency power amplifying circuit works in different frequency ranges, the capacitance value of the capacitor module can be controlled to be matched with the working frequency. The radio frequency power amplifying circuit can adapt to different working frequencies. It may not be necessary to configure multiple rf power amplification circuits for different operating frequencies. Furthermore, the topological structure of the radio frequency power amplifying circuit can be simplified, the volume of the radio frequency power amplifying circuit is reduced, and the integration level of equipment is improved. The production cost of the radio frequency power amplifying circuit is reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without exceeding the protection scope of the present application.

Fig. 1 shows a topology diagram of a radio frequency power amplifying circuit in the prior art.

Fig. 2 is a diagram illustrating a transmission gain curve of the circuit shown in fig. 1 according to the MB frequency band configuration parameter.

Fig. 3 is a diagram illustrating a transmission gain curve of the circuit shown in fig. 1 according to the MB frequency band configuration parameter.

Fig. 4 shows a schematic of a topology of a radio frequency power amplification circuit according to an embodiment of the present application.

Fig. 5 shows a schematic diagram of a transmission gain curve of the circuit shown in fig. 4.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Fig. 1 shows a topology diagram of a radio frequency power amplifying circuit in the prior art. Currently available rf power amplifier circuits generally include the circuit portion shown in fig. 1.

As shown in fig. 1, the circuit 1000 includes a transformer TF. The transformer TF includes a primary side and a secondary side. Wherein the primary side is used for accessing a radio frequency differential signal. The secondary side is used for radio frequency signal output. Capacitors C1 and C3 are typically provided on the secondary side as output frequency-selective capacitors. Capacitors C1 and C3 may resonate with TF and together determine the operating frequency of circuit 1000.

As shown in fig. 2, when the parameters of the capacitors C1 and C2 are configured according to the MB band. At frequency m 1-1.700 GHz, the gain of circuit 1000 is-0.912 dB; at a frequency of 2.100GHz at m2, the gain of circuit 1000 is-0.959 dB. It can be seen that for frequency bands MB: for signals in the range of 1.7GHz-2.1GHz, the circuit 1000 has good transmission characteristics with low attenuation. However, at a frequency of 2.300GHz at m3, the gain of circuit 1000 is-2.124 dB; at frequency m 4-2.700 GHz, the gain of circuit 1000 is-6.024 GHz. It can be seen that in frequency band HB: within the range of 2.3GHz-2.7GHz, the attenuation of the circuit 1000 is large and difficult to meet requirements.

As shown in fig. 3, when the parameters of the capacitors C1 and C2 are configured according to the HB band.

At a frequency of 2.300GHz at m3, the gain of circuit 1000 is-0.669 dB; at frequency m 4-2.700 GHz, the gain of circuit 1000 is-0.799 GHz. It can be seen that in frequency band HB: within the range of 2.3GHz-2.7GHz, the circuit 1000 has less attenuation and good transmission characteristics. However, at frequency m1 ═ 1.700GHz, the gain of circuit 1000 is-2.364 dB; at a frequency of 2.100GHz at m2, the gain of circuit 1000 is-1.051 dB. It can be seen that for frequency bands MB: signals in the range of 1.7GHz-2.1GHz, the circuit 1000 has large attenuation and is difficult to meet the requirements.

As can be seen from fig. 2 and 3, it is difficult for the circuit 1000 to simultaneously take into account the frequency bands MB: 1.7GHz-2.1GHz and band HB: 2.3GHz-2.7 GHz. The current communication needs often need to compromise the two frequency bands. For this reason, the existing design generally uses two circuits as shown in fig. 1, which are respectively adapted to the two frequency bands. By the mode, the topological structure of the circuit of the mobile communication equipment is relatively complex, the wiring area is large, and the system integration level of the communication equipment is reduced.

As shown in fig. 4, the circuit 2000 may include a transformer TF and

capacitive modules

211, 212.

As shown in fig. 4, the transformer TF may include a primary side and a secondary side. Wherein the primary side can be connected to a differential signal of the radio frequency input signal. The secondary side of the transformer TF may be used as an output terminal of the circuit 2000. The primary winding of transformer TF comprises terminal PAI1, terminal PAI2 and a center tap. The center tap can be connected to a power supply VCC. The terminal PAI1 and the terminal PAI2 may be connected to two ends of the radio frequency differential signal, respectively. At least one of the two ends PAO1 and PAO2 of the secondary winding may serve as a signal output terminal. For example, terminal PAO2 may be used for signal output terminals, connected to an antenna.

As shown in fig. 4, the

capacitor modules

211 and 212 may be respectively connected to two ends of the secondary winding of the transformer TF. For example, the capacitor module 211 may be connected across the terminal PAO1 of the secondary winding of the transformer and the ground, and the capacitor module 212 may be connected across the terminal PAO2 of the secondary winding of the transformer and the ground.

The

capacitor modules

211 and 212 may be used as frequency-selective capacitors of the circuit 2000, and resonate with the transformer TF to determine the operating range of the circuit 2000. Wherein the capacitance values of the

capacitive modules

211 and 212 can be controllably varied. The capacitance variation range of the capacitor module 211 includes a first capacitance and a second capacitance. The capacitance variation range of the capacitance module 212 includes a third capacitance and a fourth capacitance.

As shown in fig. 4, the capacitive module 211 may include capacitors C1 and C2. Alternatively, the capacitance value of the capacitor C1 may be a first capacitance value and the capacitance value of the capacitor C2 may be a second capacitance value. Alternatively, the capacitive module may include selection switches connected to the capacitor C1 and the capacitor C2, respectively. The capacitance value of the capacitor module can be controlled by controlling the connection of the capacitor C1 and/or the capacitor C2 through controlling the selection switch. Alternatively, the selection Switch may be two switches connected to the capacitor C1 and the capacitor C2, respectively, or may be a single pole double throw Switch1 as shown in the exemplary embodiment.

As shown in fig. 4, the capacitive module 212 may include capacitors C3 and C4. Alternatively, the capacitance value of the capacitor C3 may be a third capacitance value and the capacitance value of the capacitor C4 may be a fourth capacitance value. Alternatively, the capacitive module may include selection switches connected to the capacitor C3 and the capacitor C4, respectively. The capacitance value of the capacitor module can be controlled by controlling the connection of the capacitor C3 and/or the capacitor C4 through controlling the selection switch. Alternatively, the selection Switch may be two switches connected to the capacitor C3 and the capacitor C4, respectively, or may be a single pole double throw Switch2 as shown in the exemplary embodiment.

Alternatively, the operating frequency range of the circuit 2000 may include a first frequency and a second frequency. When the circuit 2000 operates near the first frequency, the capacitance of the capacitor module 211 can be controlled to be the first capacitance, and the capacitance of the capacitor module 212 can be controlled to be the third capacitance. When the circuit 2000 operates around the second frequency, the capacitance of the capacitor module 211 can be controlled to be the second capacitance, and the capacitance of the capacitor module 212 can be controlled to be the fourth capacitance. Alternatively, the first frequency may be at MB: within the range of 1.7GHz-2.1 GHz; the second frequency may be at HB: within the range of 2.3GHz-2.7 GHz. Alternatively, the circuit 2000 may be used for 5G mobile communications.

Optionally, the circuit 2000 may further include a power amplifier (not shown). Further, the circuit 2000 may include a differential power amplifier. A pair of differential outputs of the power amplifier may be connected to terminals PAI1 and PAI2, respectively. Alternatively, the circuit 2000 may also include a differential circuit of two or more power amplifiers for differential signal processing. The output terminals thereof are connected to the terminals PAI1 and PAI2, respectively.

As shown in fig. 5, when the single pole double throw switches Switch1 and Switch2 are controlled so that the capacitors C1 and C3 are connected to ground and the capacitors C2 and C4 are disconnected from ground, respectively. The transmission gain curve of the circuit 2000 may be the bold line in fig. 5. The curve may be similar to the curve shown in fig. 2. In this case, the circuit 2000 performs for the frequency band MB: the signal in the range of 1.7GHz-2.1GHz has good transmission characteristic.

As shown in fig. 5, when the single pole double throw switches Switch1 and Switch2 are controlled so that the capacitors C1 and C3 are respectively disconnected from ground and the capacitors C2 and C4 are respectively connected to ground. The transmission gain curve of the circuit 2000 may be the thin line in fig. 5. The curve may be similar to the curve shown in fig. 3. At this time, the circuit 2000 has a frequency band HB: the signal in the range of 2.3GHz-2.7GHz has good transmission characteristic.

In this way, the circuit 2000 can be used while taking into account the frequency bands MB: 1.7GHz-2.1GHz and band HB: 2.3GHz-2.7 GHz. Therefore, the complexity of the circuit topological structure of the mobile communication equipment can be reduced, the wiring area is reduced, and the system integration level of the communication equipment is improved.

The application also provides an embodiment transmission module. The transmitting module comprises any one of the radio frequency power amplifying circuits. Optionally, the transmitting module can be used for 5G mobile communication.

The present application further provides an embodiment communication device. The communication device comprises any one of the radio frequency power amplifying circuits or any one of the transmitting modules. Alternatively, the communication device may be a portable mobile communication device. Such as a cell phone, laptop or tablet, and other portable devices that may access a mobile communications network. Alternatively, the communication device may be a 5G mobile communication device.

The present application further provides an embodiment communication system. The communication system comprises any one of the radio frequency power amplifying circuits or any one of the transmitting modules. The communication system may comprise at least one of the aforementioned communication devices. Alternatively, the communication system may communicate using a 5G communication protocol.

The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the description of the embodiments is only intended to facilitate the understanding of the methods and their core concepts of the present application. Meanwhile, a person skilled in the art should, according to the idea of the present application, change or modify the embodiments and applications of the present application based on the scope of the present application. In view of the above, the description should not be taken as limiting the application.

Claims

1. A radio frequency power amplification circuit, comprising:

a transformer for transforming the voltage of the power source,

the primary side of the transformer comprises a first power amplifier end, a second power amplifier end and a middle tap, the middle tap is connected with a power supply,

the secondary side of the transformer comprises a power output end and a reference end;

the first capacitor module is bridged between the reference end and the ground, and the capacitance variation range of the first capacitor module comprises a first capacitance value and a second capacitance value;

and the second capacitor module is bridged between the power output end and the ground, and the capacitance variation range of the second capacitor module comprises a third capacitance value and a fourth capacitance value.

2. The circuit of claim 1,

the first capacitor module comprises:

a first capacitor having the first capacitance value;

a second capacitor having the second capacitance value;

the second capacitance module comprises:

a third capacitor having a capacitance value of the third capacitance value;

and the capacitance value of the fourth capacitor is the fourth capacitance value.

3. The circuit of claim 2, further comprising:

a first selection switch connected to the first capacitor and the second capacitor;

a second selection switch connected to the third capacitor and the fourth capacitor.

4. The circuit of claim 3, further comprising:

the first power amplifier is connected with the first power amplifier end;

and the second power amplifier is connected with the second power amplifier end.

5. The circuit of claim 1,

when the circuit works at a first frequency, the capacitance value of the first capacitor module is controlled to be a first capacitance value, and the capacitance value of the second capacitor module is controlled to be a third capacitance value;

when the circuit works at the second frequency, the capacitance value of the first capacitor module is controlled to be the second capacitance value, and the capacitance value of the second capacitor module is controlled to be the fourth capacitance value.

6. The circuit of claim 5,

the first frequency is within the range of 1.7GHz-2.1 GHz;

the second frequency is within a range of 2.3GHz-2.7 GHz.

7. The circuit of claim 1, wherein the circuit is used for 5G communications.

8. A transmitter module comprising the circuit of any one of claims 1-7.

9. A communication device comprising the circuit of any one of claims 1-7, or the transmit module of claim 8.

10. A communication system comprising the circuit of any one of claims 1 to 7, or the transmit module of claim 8.