CN203932092U - A kind of four-element LED - Google Patents
A kind of four-element LED Download PDFInfo
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- CN203932092U CN203932092U CN201420308163.1U CN201420308163U CN203932092U CN 203932092 U CN203932092 U CN 203932092U CN 201420308163 U CN201420308163 U CN 201420308163U CN 203932092 U CN203932092 U CN 203932092U
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- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 21
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- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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Abstract
The utility model proposes a kind of four-element LED, comprise successively substrate, resilient coating, Bragg reflector, lower coating layer, luminescent layer, upper coating layer, local doping saltation zone, extension Window layer, top electrode and bottom electrode from bottom to top, local doping saltation zone be positioned at top electrode under, on substrate, form successively resilient coating, Bragg reflector, lower coating layer, luminescent layer and upper coating layer by epitaxial growth for the first time, form extension Window layer by epitaxial growth for the second time.The utility model is by structure optimization, be not only the part doping saltation zone of making by extension means below electrode, reduce charge carrier compound under electrode, in conjunction with oxidation Bragg reflector outer peripheral areas, make the light extraction efficiency of light-emitting diode obtain effective raising simultaneously.
Description
Technical field
The utility model relates to LED field, refers to especially a kind of four-element LED.
Background technology
What at present, red yellow light LED used is all the III-V group iii v compound semiconductor material based on GaAs; Under forward voltage orders about, electronics injects P district by N district, and N district is injected by P district in hole, enters the minority carrier part and majority carrier recombination luminescence in the other side region.Quaternary system Light-Emitting Diode luminous efficiency is mainly subject to the impact of extinction substrate GaAs, secondly also has the barrier effect of metal electrode to light, causes light not send from LED surface, thereby affects light extraction efficiency.
For this reason, the research that improves LED luminous efficiency is comparatively active, major technique has the graph substrate of employing technology, distributed current barrier layer, distributed Bragg reflecting layer (English is Distributed Bragg Reflector, is called for short DBR) structure, transparent substrates, surface coarsening, photonic crystal technology etc.Wherein adopt distributed current barrier layer to improve LED luminous efficiency, at present general common way is to plate insulating material under P electrode, as silicon dioxide (SiO
2), silicon nitride (Si
3n
4) etc., but because electrode material is metal, when light sends from multiple quantum trap, 10% the light loss of still can having an appointment while arriving electrode.
It is to utilize insulating medium layer or schottky junction to realize that tradition reduces electric current crowded method under electrode, realizes technique comparatively complicated.The utility model has directly been realized and has been reduced crowded below electrode of electric current by epitaxy technology, and electric current is in effective expansion of active area.Bragg reflector is applied light-emitting diode from aspects such as material system, structural design and reduction string resistive method and development, therefore introduces local high reflectance Bragg reflector simultaneously, improves its light extraction efficiency.
Utility model content
The utility model proposes a kind of four-element LED and manufacture method thereof, solved the crowded problem under electrode of electric current in prior art.
The technical solution of the utility model is achieved in that a kind of four-element LED, comprise successively substrate, resilient coating, Bragg reflector, lower coating layer, luminescent layer, upper coating layer, local doping saltation zone, extension Window layer, top electrode and bottom electrode from bottom to top, local doping saltation zone be positioned at top electrode under, on substrate, form successively resilient coating, Bragg reflector, lower coating layer, luminescent layer and upper coating layer by epitaxial growth for the first time, form extension Window layer by epitaxial growth for the second time.
Preferably, the central area of Bragg reflector be positioned at local doping saltation zone under.
The area of preferably, the area of the central area of Bragg reflector >=part doping saltation zone.
Preferably, the outer peripheral areas of Bragg reflector is Bragg reflector zoneofoxidation.
Preferably, Bragg reflector comprises high aluminium content layer and low-aluminum-content layer.
Preferably, high aluminium content layer is specially the AlGaAs layer of high aluminium content or the AlGaInP layer of high aluminium content, aluminium content range is 80%～100%, and low-aluminum-content layer is specially the AlGaAs layer of low-aluminum-content or the AlGaInP layer of low-aluminum-content, and aluminium content range is 0%～80%.
Preferably, Bragg reflector is made up of the repetitive of AlGaAs/AlGaAs, AlGaAs/AlGaInP, AlGaInP/AlGaInP or AlGaInP/AlGaAs.
Preferably, substrate is identical with resilient coating material therefor, and material is specially GaAs; Local doping saltation zone is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially P type semiconductor material, and P type semiconductor material is specially GaP.
Preferably, top electrode material therefor is Au/BeAu/Au, and bottom electrode material therefor is GeAu/Au.
The beneficial effects of the utility model are:
The utility model is a kind of NEW TYPE OF COMPOSITE blast light-emitting diode of optimizing structure, by structure optimization, it is compound under electrode that the part doping saltation zone of not only making by extension means below electrode has reduced charge carrier, in conjunction with oxidation Bragg reflector outer peripheral areas, make the light extraction efficiency of light-emitting diode obtain effective raising simultaneously.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of an embodiment of a kind of four-element LED of the utility model;
Fig. 2 is the structural representation of a kind of another embodiment of four-element LED of the utility model.
In figure:
1, substrate; 2, resilient coating; 3, Bragg reflector; 4, lower coating layer; 5, luminescent layer; 6, upper coating layer; 7, local doping saltation zone; 8, extension Window layer; 9, top electrode; 10, bottom electrode; 11, Bragg reflector zoneofoxidation.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment 1
As shown in Figure 1, a kind of four-element LED of the utility model, comprise successively substrate 1, resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5, upper coating layer 6, local doping saltation zone 7, extension Window layer 8, top electrode 9 and bottom electrode 10 from bottom to top, local doping saltation zone 7 be positioned at top electrode 9 under, on substrate 1, form successively resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5 and upper coating layer 6 by epitaxial growth for the first time, form extension Window layer 8 by epitaxial growth for the second time.
The central area of Bragg reflector 3 be positioned at local doping saltation zone 7 under.The area of area >=part doping saltation zone 7 of the central area of Bragg reflector 3.Substrate 1 is identical with resilient coating 2 material therefors, and material is specially GaAs.Bragg reflector 3 is made up of the repetitive of AlGaAs/AlGaAs.Local doping saltation zone 7 is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially P type semiconductor material.Top electrode 9 material therefors are Au/BeAu/Au, and bottom electrode 10 material therefors are GeAu/Au.
May there is defect in substrate 1 surface, direct growth Bragg reflector 3 and follow-up each layer may cause defect to increase; It is shielding substrate 1 blemish that resilient coating 2 objects are set, for follow-up each grown layer provides desirable GaAs surface.
Embodiment 2
As shown in Figure 1, a kind of four-element LED of the utility model, comprise successively substrate 1, resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5, upper coating layer 6, local doping saltation zone 7, extension Window layer 8, top electrode 9 and bottom electrode 10 from bottom to top, local doping saltation zone 7 be positioned at top electrode 9 under, on substrate 1, form successively resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5 and upper coating layer 6 by epitaxial growth for the first time, form extension Window layer 8 by epitaxial growth for the second time.
The central area of Bragg reflector 3 be positioned at local doping saltation zone 7 under.The area of area >=part doping saltation zone 7 of the central area of Bragg reflector 3.Substrate 1 is identical with resilient coating 2 material therefors, and material is specially GaAs.Bragg reflector 3 is made up of the repetitive of AlGaAs/AlGaInP.Local doping saltation zone 7 is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially GaP.Top electrode 9 material therefors are Au/BeAu/Au, and bottom electrode 10 material therefors are GeAu/Au.
May there is defect in substrate 1 surface, direct growth Bragg reflector 3 and follow-up each layer may cause defect to increase; Forming resilient coating 2 objects is shielding substrate 1 blemish, for follow-up each grown layer provides desirable GaAs surface.
Embodiment 3
As depicted in figs. 1 and 2, a kind of four-element LED of the utility model, comprise successively substrate 1, resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5, upper coating layer 6, local doping saltation zone 7, extension Window layer 8, top electrode 9 and bottom electrode 10 from bottom to top, local doping saltation zone 7 be positioned at top electrode 9 under, on substrate 1, form successively resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5 and upper coating layer 6 by epitaxial growth for the first time, form extension Window layer 8 by epitaxial growth for the second time.
The central area of Bragg reflector 3 be positioned at local doping saltation zone 7 under.The area of area >=part doping saltation zone 7 of the central area of Bragg reflector 3.Substrate 1 is identical with resilient coating 2 material therefors, and material is specially GaAs.Bragg reflector 3 is made up of the repetitive of AlGaInP/AlGaInP.Local doping saltation zone 7 is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially P type semiconductor material, and P type semiconductor material is specially GaP.Top electrode 9 material therefors are Au/BeAu/Au, and bottom electrode 10 material therefors are GeAu/Au.
The outer peripheral areas of Bragg reflector 3 is Bragg reflector zoneofoxidation 11.Bragg reflector 3 comprises high aluminium content layer and low-aluminum-content layer.High aluminium content layer is specially the AlGaInP layer of high aluminium content, and aluminium content is 80%, and low-aluminum-content layer is specially the AlGaInP layer of low-aluminum-content, and aluminium content is 50%.
Embodiment 4
As depicted in figs. 1 and 2, a kind of four-element LED of the utility model, comprise successively substrate 1, resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5, upper coating layer 6, local doping saltation zone 7, extension Window layer 8, top electrode 9 and bottom electrode 10 from bottom to top, local doping saltation zone 7 be positioned at top electrode 9 under, on substrate 1, form successively resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5 and upper coating layer 6 by epitaxial growth for the first time, form extension Window layer 8 by epitaxial growth for the second time.
The central area of Bragg reflector 3 be positioned at local doping saltation zone 7 under.The area of area >=part doping saltation zone 7 of the central area of Bragg reflector 3.Substrate 1 is identical with resilient coating 2 material therefors, and material is specially GaAs.Bragg reflector 3 is made up of the repetitive of AlGaInP/AlGaAs.Local doping saltation zone 7 is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially P type semiconductor material, and P type semiconductor material is specially GaP.Top electrode 9 material therefors are Au/BeAu/Au, and bottom electrode 10 material therefors are GeAu/Au.
The outer peripheral areas of Bragg reflector 3 is Bragg reflector zoneofoxidation 11.Bragg reflector 3 comprises high aluminium content layer and low-aluminum-content layer.High aluminium content layer is specially the AlGaInP layer of high aluminium content, and aluminium content is 100%, and low-aluminum-content layer is specially the AlGaAs layer of low-aluminum-content, and aluminium content is 80%.
Embodiment 5
As depicted in figs. 1 and 2, a kind of four-element LED of the utility model, comprise successively substrate 1, resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5, upper coating layer 6, local doping saltation zone 7, extension Window layer 8, top electrode 9 and bottom electrode 10 from bottom to top, local doping saltation zone 7 be positioned at top electrode 9 under, on substrate 1, form successively resilient coating 2, Bragg reflector 3, lower coating layer 4, luminescent layer 5 and upper coating layer 6 by epitaxial growth for the first time, form extension Window layer 8 by epitaxial growth for the second time.
The central area of Bragg reflector 3 be positioned at local doping saltation zone 7 under.The area of area >=part doping saltation zone 7 of the central area of Bragg reflector 3.Substrate 1 is identical with resilient coating 2 material therefors, and material is specially GaAs.Bragg reflector 3 is made up of the repetitive of AlGaAs/AlGaAs.Local doping saltation zone 7 is made up of the semi-conducting material of identical conduction type, and semi-conducting material is specially P type semiconductor material.Top electrode 9 material therefors are Au/BeAu/Au, and bottom electrode 10 material therefors are GeAu/Au.
The outer peripheral areas of Bragg reflector 3 is Bragg reflector zoneofoxidation 11.Bragg reflector 3 comprises high aluminium content layer and low-aluminum-content layer.High aluminium content layer is specially the AlGaAs layer of high aluminium content, and aluminium content is 90%, and low-aluminum-content layer is specially the AlGaAs layer of low-aluminum-content, and aluminium content is 0%.
May there is defect in substrate 1 surface, direct growth Bragg reflector 3 and follow-up each layer may cause defect to increase; The object that forms resilient coating 2 is shielding substrate 1 blemish, for follow-up each grown layer provides desirable GaAs surface.
Upper coating layer 6 is identical with extension Window layer 8 materials, and local doping saltation zone 7 comprises low doped layer and heavily doped layer; Low doped layer forms by upper coating layer 6 being carried out to photoetching and etching, and the upper surface of upper coating layer 6 belongs to heavily doped layer, and approximately several thousand
thickness, the entirety of extension Window layer 8 is heavily doped layer, i.e. the doping of extension Window layer 8 is identical or close with the doping of upper coating layer 6 upper surfaces.Luminous zone 5 undopes, and initial doping content is identical, and concentration is discontinuous, and high-concentration and low-concentration junctional area i.e. local doping saltation zone 7.Top electrode 9 to be arranged on local doping saltation zone 7 directly over, when cutting, to ensure that top electrode 9 is positioned at chip center position.Local doping saltation zone 7 is current barrier layer, mainly plays the effect of current blocking.Bottom electrode 10 is prepared by the mode of vacuum coating, i.e. evaporation operation.
Bragg reflector 3 is applied good technical advantage from aspects such as material system, structural design and reduction string resistive method light-emitting diode.Bragg reflector 3 can be multiple or multilayer.The overlapping distribution of high aluminium content layer and low-aluminum-content layer forms Bragg reflector 3.The oxidized formation Bragg reflector of the outer peripheral areas zoneofoxidation 11 of Bragg reflector 3, the central area oxygen-freeization aluminium of Bragg reflector 3.Aluminium oxide is high with semi-conducting material phase specific refractivity, strengthens the refractive index difference of high low-index material by the high-index material that aluminium oxide makees Bragg reflector 3, improve the reflection coefficient of Bragg reflector 3, but aluminium oxide is non-conductive.
The square resistance in local doping saltation zone 7 regions is greater than peripheral region, in electric current is from electrode injection to semi-conducting material time, electric current nature is to the low area extension of square resistance, thereby reduce the probability of charge carrier radiation recombination under electrode, reduce the electrode light loss causing of being in the light, introduce local high reflectance Bragg reflector 3 simultaneously, saltation zone 7 is organic coordinates with part doping, the light extraction efficiency that greatly improves device, approximately doubles.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (9)
1. a four-element LED, it is characterized in that, comprise successively substrate (1) from bottom to top, resilient coating (2), Bragg reflector (3), lower coating layer (4), luminescent layer (5), upper coating layer (6), local doping saltation zone (7), extension Window layer (8), top electrode (9) and bottom electrode (10), described local doping saltation zone (7) be positioned at described top electrode (9) under, above form successively described resilient coating (2) by epitaxial growth for the first time at described substrate (1), described Bragg reflector (3), described lower coating layer (4), described luminescent layer (5) and described upper coating layer (6), form described extension Window layer (8) by epitaxial growth for the second time.
2. a kind of four-element LED according to claim 1, is characterized in that, the central area of described Bragg reflector (3) be positioned at described local doping saltation zone (7) under.
3. a kind of four-element LED according to claim 2, is characterized in that, the area of the area >=described local doping saltation zone (7) of the central area of described Bragg reflector (3).
4. a kind of four-element LED according to claim 1, is characterized in that, the outer peripheral areas of described Bragg reflector (3) is Bragg reflector zoneofoxidation (11).
5. a kind of four-element LED according to claim 4, is characterized in that, described Bragg reflector (3) comprises high aluminium content layer and low-aluminum-content layer.
6. a kind of four-element LED according to claim 5, it is characterized in that, described high aluminium content layer is specially the AlGaAs layer of high aluminium content or the AlGaInP layer of high aluminium content, aluminium content range is 80%～100%, described low-aluminum-content layer is specially the AlGaAs layer of low-aluminum-content or the AlGaInP layer of low-aluminum-content, and aluminium content range is 0%～80%.
7. a kind of four-element LED according to claim 6, is characterized in that, described Bragg reflector (3) is made up of the repetitive of AlGaAs/AlGaAs, AlGaAs/AlGaInP, AlGaInP/AlGaInP or AlGaInP/AlGaAs.
8. according to a kind of four-element LED described in claim 1～7 any one, it is characterized in that, described substrate (1) is identical with described resilient coating (2) material therefor, and described material is specially GaAs; Described local doping saltation zone (7) is made up of the semi-conducting material of identical conduction type, and described semi-conducting material is specially P type semiconductor material, and described P type semiconductor material is specially GaP.
9. a kind of four-element LED according to claim 8, is characterized in that, described top electrode (9) material therefor is Au/BeAu/Au, and described bottom electrode (10) material therefor is GeAu/Au.
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|---|---|---|---|
| CN201420308163.1U CN203932092U (en) | 2014-06-10 | 2014-06-10 | A kind of four-element LED |
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| CN201420308163.1U CN203932092U (en) | 2014-06-10 | 2014-06-10 | A kind of four-element LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311024A (en) * | 2015-02-17 | 2019-10-08 | 新世纪光电股份有限公司 | led |
| US11508877B2 (en) | 2019-03-22 | 2022-11-22 | Genesis Photonics Inc. | Red light emitting diode and manufacturing method thereof |
-
2014
- 2014-06-10 CN CN201420308163.1U patent/CN203932092U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311024A (en) * | 2015-02-17 | 2019-10-08 | 新世纪光电股份有限公司 | led |
| US11508877B2 (en) | 2019-03-22 | 2022-11-22 | Genesis Photonics Inc. | Red light emitting diode and manufacturing method thereof |
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Effective date of registration: 20180502 Address after: 243000 Ma'anshan, Anhui province to undertake industrial transfer Demonstration Park (north of Longshan Avenue) Patentee after: MA'ANSHAN TAISHI XINGUANG TECHNOLOGY CO.,LTD. Address before: 100176 Beijing Daxing District economic and Technological Development Zone, No.1, ground north street. Patentee before: Beijing Taishi Xinguang Technology Co.,Ltd. |
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