CN203851109U - Composite substrate - Google Patents
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- CN203851109U CN203851109U CN201320884800.5U CN201320884800U CN203851109U CN 203851109 U CN203851109 U CN 203851109U CN 201320884800 U CN201320884800 U CN 201320884800U CN 203851109 U CN203851109 U CN 203851109U
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- supporting substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 289
- 239000002131 composite material Substances 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 80
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 29
- 230000008646 thermal stress Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
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- 239000012535 impurity Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 235000019687 Lamb Nutrition 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
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- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The utility model relates to a composite substrate (10), and the composite substrate (10) is provided with a piezoelectric substrate (12) and a supporting substrate (14). The mutual positioning planes (12a, 14a) of the piezoelectric substrate (12) and the supporting substrate (14) form an angle theta which is within a range from 2 degrees to 60 degrees. In addition, the direction of the positioning plane (12a) of the piezoelectric substrate (12) is set as a first direction in a direction along a mutual connecting plane. A direction perpendicular to the first direction is set as a second direction. The distance between mutual centers (12b, 14b) in the first direction is a first distance D1, and the distance between mutual centers (12b, 14b) in the second direction is a second distance D2, wherein one of the first and second distances D1 and D2 exceeds 0% of the diameter of the piezoelectric substrate (12) and is less than 1% of the diameter of the piezoelectric substrate (12), and the other distance is greater than 0% of the of the diameter of the piezoelectric substrate (12) and less than 1% of the diameter of the piezoelectric substrate (12). The piezoelectric substrate (12) and the supporting substrate (14) are connected through a non-crystal layer containing Ar. The supporting substrate (14) is made of silicon, and is connected with the piezoelectric substrate (12) on an orientation plane (111).
Description
Technical field
The utility model relates to composite base plate.
Background technology
In the past, can be as the elastic surface wave device of the filter element using on mobile phone etc. and oscillator performance function, use the elastic wave device of Lamb wave element and the film harmonic oscillator (FBAR:Film Bulk Acoustic Resonator) etc. of piezoelectric membrane to be known by people.As such elastic wave device, knownly a kind ofly like this will propagate that the piezoelectric substrate of elastic wave is connected with the supporting substrate with the thermal linear expansion coefficient less than this piezoelectric substrate (being designated hereinafter simply as " thermal coefficient of expansion ") and the composite base plate of several inches big or small that obtains making, and this composite base plate is adopted photoetching technique and after being provided with a large amount of comb electrodes, cuts out the device obtaining by cutting.By utilizing such composite base plate, thus the size variation of the piezoelectric substrate while being changed by supporting substrate inhibition temperature, so be able to stabilisation as the frequency characteristic of elastic wave device.For example, in patent documentation 1, having proposed by a kind of structure is the adhesive layer that consists of epoxy adhesive using as the LT substrate (LT is the abbreviation of lithium tantalate) of piezoelectric substrate with as the elastic wave device of the silicon substrate laminating of supporting substrate.In addition, in patent documentation 2, proposing to have a kind of structure is on the joint face of piezoelectric substrate and supporting substrate, to irradiate ion beam to make its activation, makes the direct-connected elastic wave device of piezoelectric substrate and support substrate on joint face.
Prior art document
Patent documentation
[patent documentation 1] Japanese Patent Laid-Open 2007-150931 communique
[patent documentation 2] Japanese Patent Laid-Open 2004-343359 communique
Utility model content
[utility model technical problem to be solved]
But, because the composite base plate of above-mentioned patent documentation 1,2 is not high enough because of thermal endurance, can there is the problem that cracking occurs and peel off in the heat treated under wafer state.
The utility model is to propose in view of the above problems, and main purpose is, a kind of good stable on heating composite base plate that possesses is provided.
[technological means of dealing with problems]
Composite base plate of the present utility model comprises: piezoelectric substrate, and described piezoelectric substrate possesses plane of orientation, and at least one in thermal linear expansion coefficient and Young's modulus has anisotropy; And supporting substrate, described supporting substrate possesses plane of orientation, and is connected with described piezoelectric substrate, and at least one in thermal linear expansion coefficient and Young's modulus has anisotropy.Described piezoelectric substrate is connected in the following manner with described supporting substrate: in the direction of the joint face along mutual, the direction of the plane of orientation along described piezoelectric substrate is made as to the 1st direction, when the direction vertical with the 1st direction is made as to the 2nd direction, the distance of mutual center in described the 1st direction the 1st distance B 1, distance in described the 2nd direction one of them of the 2nd distance B 2 be exceed piezoelectric substrate diameter 0% and below 1%, more than 0% below 1% of another diameter that is piezoelectric substrate.
According to composite base plate of the present utility model, be described scope by the 1st distance B the 1, the 2nd distance B 2 that makes piezoelectric substrate and supporting substrate, thereby improved thermal endurance.Although reason indefinite, in the composite base plate being in fact connected at least one in the 1st distance B the 1, the 2nd distance B 2 of piezoelectric substrate and supporting substrate staggered, the negligible amounts that generation is ftractureed and peeled off.From the evaluation that method is carried out by experiment, think that the thermal stress of composite base plate of such connection has diminished.The scope that thermal stress is little refer to the 1st distance B 1 and the 2nd distance B 2 one of them be exceed piezoelectric substrate diameter 0% and below 1%, another is more than 0% below 1% of diameter of piezoelectric substrate 12.
In composite base plate of the present utility model, described the 1st distance B 1 and described the 2nd distance B 2 are all preferably more than 0.3% below 1.0% of diameter of described piezoelectric substrate.Like this, because the intersection point of the excircle of piezoelectric substrate and supporting substrate tails off, so the thermal stress can make to heat time further reduces.
In composite base plate of the present utility model, the angle θ that described piezoelectric substrate can be by mutual plane of orientation with described supporting substrate is that the mode of 2 °～60 ° is connected.Thus, can improve the thermal endurance of composite base plate.
In composite base plate of the present utility model, described piezoelectric substrate can be connected by the amorphous layer that contains Ar with described supporting substrate.Do like this, because amorphous layer in the time that composite base plate heats has played the effect of resilient coating as padded coaming, so the thermal stress can alleviate heating time.Thus, can improve further the thermal endurance of composite base plate.
In composite base plate of the present utility model, described supporting substrate can be silicon system, and is connected with described piezoelectric substrate on orientation (111) face.By like this, thermal stress when heating is distributed on XYZ direction of principal axis by 3, so component separately diminishes.In addition, if (111) face, crystal structure is closest packing, and therefore, from the viewpoint of crystal structure, the contact area of supporting substrate when connection has become maximum.Therefore, bonding strength is improved, and supporting substrate will be difficult to peel off.Thus, can improve further the thermal endurance of composite base plate.
Brief description of the drawings
Fig. 1 is the stereogram of composite base plate 10.
Fig. 2 is the figure of the A line of vision of Fig. 1.
Fig. 3 is the sectional view (partial cross section figure) of the B – B in Fig. 1.
Fig. 4 is the amplification sectional view of the amorphous layer 13 in the situation that amorphous layer 13 forms by 3 layers.
Fig. 5 is the key diagram that schematically shows the manufacturing process of composite base plate 10.
Fig. 6 shows the key diagram of the situation when composite base plate 10 is made as the aggregate as elastic surface wave device's single port SAW harmonic oscillator 30.
[symbol description]
10 composite base plates,
12 piezoelectric substrates,
12a plane of orientation (OF),
12b center,
13 amorphous layer,
The 1st layer～the 3rd layer of 13a～13c,
14 supporting substrates,
14a plane of orientation (OF),
14b center,
20 adhesive substrates,
22 piezoelectric substrates,
22a plane of orientation (OF),
22b center,
30 single port SAW harmonic oscillators,
32,34IDT(Interdigital Transducer: interdigital transducer) electrode,
36 reflecting electrodes
Embodiment
Next, use accompanying drawing to describe execution mode of the present utility model.Fig. 1 is the stereogram as the composite base plate 10 of 1 execution mode of the present utility model.Fig. 2 is the figure (vertical view of Fig. 1) of the A line of vision of Fig. 1.Fig. 3 is the sectional view (partial cross section figure) of the B – B of Fig. 1.Composite base plate 10 possesses piezoelectric substrate 12 and supporting substrate 14.In addition, composite base plate 10 possesses amorphous layer 13, and piezoelectric substrate 12 is connected by this amorphous layer 13 with supporting substrate 14.
Piezoelectric substrate 12 is for having the roughly substrate in the form of annular discs of plane of orientation (OF) 12a, and at least one in thermal coefficient of expansion and Young's modulus has anisotropy.For piezoelectric substrate 12, there is no particular limitation, for example be preferably, lithium tantalate (LT), lithium niobate (LN), lithium niobate-lithium tantalate sosoloid monocrystal body, crystal, lithium borate, zinc oxide, aluminium nitride, LGS (LGS) or tantalic acid gallium lanthanum (LGT), wherein, more preferably LT or LN.Its reason is: LT and LN are because elastic surface velocity of wave propagation is fast, and electromechanical coupling factor is larger, so be applicable to the elastic surface wave device of high-frequency and broadband frequency.For the size of piezoelectric substrate 12, there is no particular limitation, and for example diameter is 50～150mm, and thickness is 10～50 μ m
Supporting substrate 14 is the roughly substrates in the form of annular discs with plane of orientation (OF) 14a, and at least one in thermal coefficient of expansion and Young's modulus has anisotropy.Supporting substrate 14 is preferably compares piezoelectric substrate 12 and thermal coefficient of expansion is little.In addition, the coefficient of thermal expansion differences of piezoelectric substrate 12 and supporting substrate 14 can be also more than 10ppm/K.Its reason is: in such situation, because both coefficient of thermal expansion differences are larger, so easily ftracture while heating, apply meaning of the present utility model higher.For this supporting substrate 14, there is no particular limitation, is preferably for example silicon, sapphire, GaAs, gallium nitride or crystal, wherein, and more preferably silicon or sapphire.Its reason is, silicon and sapphire are applied to semiconductor device manufacture widely.In addition, as in the embodiment described in, the in the situation that of connection with piezoelectric substrate 12 by amorphous layer 13 at supporting substrate 14, supporting substrate 14 is preferably silicon.Supporting substrate 14 is preferably silicon system, on orientation (111) face, is connected with piezoelectric substrate 12.That is, be preferably: supporting substrate 14 is silicon system, and the face of piezoelectric substrate 12 1 sides is orientation (111) face.For the size of supporting substrate 14, there is no particular limitation, and for example, diameter is 50～150mm, thickness 100～500 μ m.In addition, in present embodiment, piezoelectric substrate 12 is the same with the diameter of supporting substrate 14, also comprises OF12a and OF14a, and the shape of piezoelectric substrate 12 and supporting substrate 14 is at least the same except thickness.But, being also not limited only to this, the diameter of for example piezoelectric substrate 12 and supporting substrate 14 also can be different.
The layer of amorphous layer 13 for containing Ar, and for being present between piezoelectric substrate 12 and supporting substrate 14 layer of both bondings.Amorphous layer 13 preferred thickness are 4nm～12nm.By like this, can guarantee for example 300 DEG C of above thermal endurances etc., can further make the thermal endurance of composite base plate 10 be improved.
This amorphous layer 13 both can be made up of 1 layer as illustrated in fig. 3, also can form by 2 layers or 3 layers.In addition, in the situation that amorphous layer 13 is made up of 1 layer, the containing ratio of the Ar of amorphous layer 13 inside, such as changing etc., can be also that the containing ratio of the Ar of amorphous layer 13 inside changes continuously thickness direction Smooth.That is to say, the containing ratio of amorphous layer 13 interior Ar can not be constant, and the line of demarcation of 2 layers, 3 layers etc. each layer also can be defined ambiguously.Similarly, in amorphous layer 13, by more than 2 layers form in the situation that, the containing ratio of the Ar of the inside of each layer can for example change thickness direction Smooth.
Fig. 4 is the amplification sectional view of the amorphous layer 13 in the situation that amorphous layer 13 forms by 3 layers.In Fig. 4, amorphous layer 13 has the 1st layer of 13a, the 2nd layer of 13b and the 3rd layer of 13c from piezoelectric substrate 12 towards supporting substrate 14.Now, be preferably the 1st layer of 13a compared to the 2nd layer of 13b and the 3rd layer of 13c, the element that contains more formation piezoelectric substrate 12.In addition, be preferably the 3rd layer of 13c compared to being the 1st layer of 13a and the 2nd layer of 13b, the element that contains more formation supporting substrate 14.Be preferably the 2nd layer of 13b compared to the 1st layer of 13a and the 3rd layer of 13c and contain more Ar.Forming by such 3 layers in amorphous layer 13, by compared with 2 layers of situation about forming, can make the bonding strength of piezoelectric substrate 12 and supporting substrate 14 enough high with amorphous layer 13 for example.In addition, in the situation that amorphous layer 13 forms by 3 layers, be preferably the 3rd layer of 13c compared to the 1st layer of 13a and the 2nd layer of 13b and thickness is thicker.Under these circumstances, the thickness 13a that the 3rd layer of 13c can be than the 1st layer and the thickness sum of the 2nd layer of 13c are thicker.
The Ar containing in amorphous layer 13 is preferably 3atm%～10atm%.In addition, in amorphous layer 13, by more than 2 layers form in the situation that, the content of the Ar in whole amorphous layer 13 is also preferably 3atm%～10atm%.
In this composite base plate 10, piezoelectric substrate 12 and support substrate 14 as shown in Figure 1, 2, relatively rotation in the upper liftoff connection of skew of the direction of the joint face along mutual (along the direction of the paper of Fig. 2).More particularly, the state that piezoelectric substrate 12 has relatively rotated taking the angle θ that OF1a, OF14a were by mutual as the mode of 2 °～60 ° with support substrate 14 is connected (Fig. 2).In addition, in Fig. 2, although be that support substrate 14 has counterclockwise rotated angle θ with respect to piezoelectric substrate 12, can be also clockwise direction anglec of rotation θ.In addition, piezoelectric substrate 12 and support substrate 14 exceed by one of them that makes the 1st distance B 1 and the 2nd distance B 2 piezoelectric substrate 12 diameter (diameter wafer) 0% and below 1%, more than 0% mode below 1% of another diameter that is piezoelectric substrate 12 connects (amplifier section in Fig. 2).At this, the 1st distance B 1 refers to: in the time that the direction of the OF12a along piezoelectric substrate 12 in the direction of the joint face along piezoelectric substrate 12 and support substrate 14 (left and right directions in Fig. 2) is made as to the 1st direction, piezoelectric substrate 12 center 12b and support substrate 14 center 14b are in the distance of the 1st direction.In addition, the 2nd distance B 2 refers to: in the time that direction (above-below direction in Fig. 2) vertical the OF12a with piezoelectric substrate 12 in the direction along piezoelectric substrate 12 and the joint face of support substrate 14 is made as to the 2nd direction, piezoelectric substrate 12 center 12b and support substrate 14 center 14b are in the distance of the 2nd direction.That is to say, in this example, about piezoelectric substrate 12 and support substrate 14,12bYu center, center 14b has been offset the 1st distance B 1 in the 1st direction, and in the 2nd direction, has been offset the 2nd distance B 2.In addition, due to the 1st distance B 1 as above and the 2nd distance B 2 one of them likely its value for 0mm(0%), so also can make only skew in a first direction of center 12b and support substrate 14b, or only in the 2nd direction, depart from.In addition, in Fig. 2, center 14b with respect to center 12b and left to and below upwards skew, but both can in right, depart from, also can upwards be offset up.
12bHe center, center 14b is by making in this wise the 1st distance B the 1, the 2nd distance B 2 mode in prescribed limit and being separated respectively, and has been separated from each other distance
in addition, because piezoelectric substrate 12 is discoid, therefore, piezoelectric substrate 12 center 12b is positioned at the center of the circle (ignoring OF12a) of the excircle of piezoelectric substrate 12.For supporting substrate 14 center 14b, be also the same.In addition, in the case of the diameter of piezoelectric substrate 12 and supporting substrate 14 is as the present embodiment identical, observe composite base plate 10 when the vertical direction in the surface with piezoelectric substrate 12 from as shown in Figure 2, supporting substrate 14 has exposed distance B with respect to piezoelectric substrate 12 in diametric(al).
Be connected in the mode of above-mentioned scope by the angle θ according to making piezoelectric substrate 12 with supporting substrate 14, the 1st distance B 1 and the 2nd distance B 2, thereby the thermal stress while heating can become less.The 1st distance B 1 and the 2nd distance B 2 are all preferably more than 0.3% below 1% of diameter of piezoelectric substrate 12.Although thermal stress when heating, also because material or the grain arrangement of angle θ, the 1st distance B the 1, the 2nd distance B 2, piezoelectric substrate 12 and supporting substrate 14 change, also can be carried out for example following experimental evaluation.As mentioned above, by using angle θ, the 1st distance B the 1, the 2nd distance B 2, whether be formed with the composite base plate that the grain arrangement of amorphous layer and supporting substrate 14 makes as parameter, prepare 20 according to standard is different, in the baking oven of 350 DEG C, heat 1 hour.Investigate rate of finished products according to the cracking of the wafer causing due to heating and the generation quantity peeled off, try to achieve the size of thermal stress.In addition, about the composite base plate of high-fire resistance, need to be heated to further high temperature, and the mode that can manifest by the gap of the rate of finished products of the composite base plate of various criterion is set heating-up temperature.
About the manufacture method of such composite base plate 10, use Fig. 5 to carry out following explanation.Fig. 5 is the key diagram that schematically shows the manufacturing process of composite base plate 10.First, be ready to piezoelectric substrate 22 and supporting substrate 14(as Fig. 5 (a)).Piezoelectric substrate 22 is the substrates that become piezoelectric substrate 12 by grinding, the same with piezoelectric substrate 12 except thickness.
Then, supporting substrate 14 is rotated and locate (with reference to Fig. 5 (b)), so that the orientation of the OF14a of supporting substrate 14 is with respect to the orientation of plane of orientation (OF) 22a of piezoelectric substrate 22 and be angle θ.Angle θ is the value in the scope of 2 °～60 ° as above.Thus, the mutual OF22a of piezoelectric substrate 22 and supporting substrate 14, angle θ that OF14a is are 2 °～60 °.
Next, be the 1st direction by the direction setting of the OF22a along piezoelectric substrate 22 in the direction of the joint face along piezoelectric substrate 22 and the supporting substrate 14 surperficial direction of supporting substrate 14 (=along), and be the 2nd direction by the direction setting perpendicular to OF22a, supporting substrate 14 is moved to the 1st distance B the 1, the 2nd distance B 2 with respect to piezoelectric substrate 22 and locate.The 1st distance B the 1, the 2nd distance B 2 is described above, one of them for exceed piezoelectric substrate 22 diameters (wafer diameter) 0% and below 1%, another is the value of more than 0% scope below 1% of the diameter of piezoelectric substrate 22.Thus, mutual 22bHe center, the center 14b of piezoelectric substrate 22 and supporting substrate 14 has departed from the 1st distance B 1 and the 2nd distance B 2, and 22bYu center, center 14b has separated distance B (as Fig. 5 (c)) in the direction of piezoelectric substrate 22 and the joint face of supporting substrate 14.In addition, in the time making supporting substrate 14 move the 1st distance B 1, the 2nd distance B 2, make OF22a and OF14a and angle θ constant.
Then, in the case of keeping as former state the position relationship of piezoelectric substrate 22 and supporting substrate 14 (angle θ, the 1st distance B the 1, the 2nd distance B 2), the surface of the back side of piezoelectric substrate 22 and supporting substrate 14 is directly connected and obtains adhesive substrates 20(as Fig. 5 (d)).As by direct-connected two substrates method, exemplify following method.That is, first, the joint face of two substrates is cleaned up, remove the impurity (oxide and adsorbate etc.) adhering on joint face.Next,, by the joint face to two substrates by the ion beam irradiation of the inert gases such as Ar, remove residual impurity and make joint face activation.Afterwards, for example, by cooling two substrates (20～50 DEG C, 20～30 DEG C, normal temperature etc.), pressurize in a vacuum two substrates is fitted.In addition, in the amorphous layer 13 by containing Ar piezoelectric substrate 22 is connected with supporting substrate 14, be preferably in a vacuum the joint face of two plates is irradiated to Ar beam of neutral atoms or Ar ion beam, pressurize after two substrates is cooling and two substrates is connected.Because amorphous layer 13 easily becomes 3-tier architecture, so more preferably use Ar beam of neutral atoms.
Then, by grinder, the surface of the piezoelectric substrate 22 in adhesive substrates 20 is ground.As grinder, use be first by the thickness attenuation of piezoelectric substrate 22, after this carry out the grinder of mirror ultrafinish.Its result, the piezoelectric substrate 22 before grinding becomes the piezoelectric substrate 12 after grinding, has completed above-mentioned composite base plate 10(as Fig. 5 (e)).
About the composite base plate 10 obtaining like this, after this, adopt general photoetching technique and make it to become multiple elastic surface wave devices' aggregate, afterwards, by cutting the elastic surface wave device who cuts out one by one.Situation while making composite base plate 10 become elastic surface wave device's the aggregate of single port SAW harmonic oscillator 30 as shown in Figure 6.Single port SAW harmonic oscillator 30 is on the surface of piezoelectric substrate 12, to have formed a pair of IDT(Interdigital Transducer that can encourage elastic surface wave by photoetching technique: interdigital transducer) electrode 32,34(be also referred to as comb electrode, bamboo curtain splint shape electrode) and reflecting electrode 36 obtain.In addition, in cutting when composite base plate 10, as shown in Figure 6, be preferably using piezoelectric substrate 12 as benchmark (for example, using OF12a as benchmark) and carry out.
According to the composite base plate 10 of the present embodiment of above detailed description, it is 2 °～60 ° by making the angle θ of piezoelectric substrate 12 and supporting substrate 14, one of them of the 1st distance B 1 and the 2nd distance B 2 is for exceeding piezoelectric substrate 12 diameters 0% and below 1%, another is more than 0% below 1% of diameter of piezoelectric substrate 12, thereby compared with the composite base plate of making in scope outside it, the thermal stress can make the heating of composite base plate 10 time further reduces.Therefore, suppressed the cracking occurring when composite base plate 10 heats and peeled off, thermal endurance is improved.In addition, by making more than 0.3% below 1% of diameter that more than 0.3% below 1% of diameter that the 1st distance B 1 is piezoelectric substrate 12, the 2nd distance B 2 are piezoelectric substrate 12, thereby the intersection point of the piezoelectric substrate 12 in Fig. 2 of the A line of vision as Fig. 1 and the wafer excircle of supporting substrate 14 tails off, so the thermal stress can make the heating of composite base plate 10 time further reduces.That is, for example in Fig. 2, the intersection point of the wafer excircle of piezoelectric substrate 12 and supporting substrate 14 is 2 places (each 1 places of the upside of Fig. 2 and downside), but also having intersection point according to the position relationship of piezoelectric substrate 12 and supporting substrate 14 is the situation at 4 places.Such intersection point of the wafer excircle of piezoelectric substrate 12 and supporting substrate 14 is fewer, and the thermal stress just can make the heating of composite base plate 10 time is less.
In addition, in composite base plate 10, piezoelectric substrate 12 is connected by the amorphous layer 13 that contains Ar with supporting substrate 14.Therefore,, in the time of heating composite base plate 10, amorphous layer 13 becomes padded coaming and brings into play the effect of resilient coating, so the thermal stress can make to heat time is alleviated.Thus, can make the thermal endurance of composite base plate 10 be further enhanced.
And in composite base plate 10, if supporting substrate 14 is made as to silicon system, supporting substrate 14 is connected with piezoelectric substrate 12 on orientation (111) face, the thermal stress can make to heat time further reduces.Its reason is: in the time that supporting substrate 14 is connected with piezoelectric substrate 12 on (100) face or (110) face, to apply thermal stress on X-direction or XY direction of principal axis, and while connecting on (111) face, be that thermal stress 3 is distributed on XYZ direction of principal axis, each component is diminished.In addition, if at (111) face, crystal structure is closest packing, and therefore, the contact area of the supporting substrate 14 when connection reaches maximum from the viewpoint of crystal structure.Situation about being therefore connected on (100) face or (110) face with supporting substrate 14 is compared, and bonding strength is improved, peeling off can further restrain grinding, cutting, heat treated time.
In addition, the utility model is not limited by above-mentioned execution mode completely, says nothing of, and can in the limit that belongs to technical scope of the present utility model, implement in various modes.
For example, in the above-described embodiment, although being arranged to make the angle θ of piezoelectric substrate 12 and supporting substrate 14 is 2 °～60 °, one of them of the 1st distance B 1 and the 2nd distance B 2 is for exceeding piezoelectric substrate 12 diameters 0% and below 1%, another is more than 0% below 1% of diameter of piezoelectric substrate 12, but as long as the 1st distance B 1 and the 2nd distance B 2 meet this number range, angle θ also can not be 2 °～60 °.Even in this case, compare with the composite base plate that the 2nd distance B 2 does not meet this number range with the 1st distance B 1, also can make the thermal endurance of composite base plate 10 be further enhanced.But angle θ is more preferably 2 °～60 °.
For example, in the above-described embodiment, be directly connected by amorphous layer 13 with supporting substrate 14 although be arranged to piezoelectric substrate 12, also can directly do not connect by amorphous layer 13.In addition, piezoelectric substrate 12 also can be connected by organic adhesive layer indirectly with supporting substrate 14.As the method indirectly connecting by organic adhesive layer, exemplify following method.That is, first, the joint face of piezoelectric substrate and supporting substrate two substrates is cleaned up, remove the impurity adhering on this joint face.Next, even coating organic bond at least one of the joint face of two substrates.Afterwards, two substrates is fit together, in the situation that organic bond is thermosetting resin, heating make its sclerosis, in the situation that organic bond is ray hardening resin, light irradiation and make it sclerosis.
In the above-described embodiment, although be arranged to: in the manufacturing process of the composite base plate 10 that uses Fig. 5 to illustrate, in order to adjust angle θ, supporting substrate 14 is rotated, then for adjusting the 1st distance B 1 and the 2nd distance B 2, supporting substrate 14 is located, but be also not limited only to this.For example, can be also after the 1st distance B 1 and the 2nd distance B 2 are adjusted, adjust angle θ, can be also they to be adjusted simultaneously.In addition, in the above-described embodiment, although position taking piezoelectric substrate 12 as benchmark movable support substrate 14,, also can, taking supporting substrate 14 as the mobile piezoelectric substrate 12 of benchmark positions, can be also that common mobile piezoelectric substrate 12 and supporting substrate 14 position.
[embodiment]
Embodiment 1]
Made the composite base plate 10 of embodiment 1 according to the manufacture method of above-mentioned composite base plate 10.Specifically, carry out as described below.First, prepared respectively two-sided lapping thickness t be 230 μ m, diameter are the LT plate (piezoelectric substrate 12) of 4 inches, and thickness t is that 250 μ m, diameter are the silicon substrate (supporting substrate 14) that the joint face of 4 inches is (111) face.In addition, LT substrate is centered by the X-axis as elastic surface direction of wave travel, has rotated 42 ° from Y-axis Z axis, becomes the LT plate (42Y-XLT) that 42 ° of Y cutting X propagate.In addition, the orientation of the OF12a of LT substrate is the orientation that represents elastic surface direction of wave travel (X-axis).Secondly, these substrates are directed into the vacuum chamber that keeps 10-6Pa left and right vacuum degree, joint face is relatively kept.Now, silicon substrate rotates taking LT substrate as benchmark, and the 1st direction and the 2nd direction keep with staggering.Rotation amount is made as in the counterclockwise direction to (counter clockwise direction in Fig. 2) upper 10 °, the amount of movement of the 1st direction and the 2nd direction is for going up 0.5mm to (direction on Fig. 2) up.That is, make angle θ=10 °, the diameter of the 1st distance B 1=0mm(LT substrate is 0%), the diameter of the 2nd distance B 2=0.5mm(LT substrate 0.5%).Next, the joint face of two substrates is irradiated to the time of Ar light beam 120sec, remove surperficial inert layer and make its activation.Then, make mutual substrate contacts, apply the load of 500kgf and connect.After this, with grinder, LT substrate surface being ground to thickness is 15 μ m, and (it is 2.5 μ m that particle diameter 1 μ m) is ground to thickness to recycling diamond slurry.After packing, using colloidal silica to be ground to thickness is 1 μ m, obtains the composite base plate 10 of embodiment 1.By TEM(transmission electron microscope) section is observed to discovery, the linkage interface of this composite base plate 10 formed contain Ar by 3 layers of amorphous layer forming.
Embodiment 2]
Embodiment 2 is: by using the ion beam of the ion beyond Ar to remove surperficial inert layer and making it activation, manufacture the composite base plate being formed by the amorphous layer that does not contain Ar at linkage interface, except this point, made in the same manner as in Example 1 composite base plate 10.That is to say, in embodiment 2, make angle θ=10 °, the diameter of the 1st distance B 1=0mm(LT substrate 0%), the diameter of the 2nd distance B 2=0.5mm(LT substrate 0.5%), connect by the amorphous layer that does not contain Ar, the joint face of supporting substrate is made as to (111) face.
［ embodiment 3 ］
Embodiment 3 is: make joint face as 45 ° of (clockwise direction of Fig. 2) the upper rotations in the clockwise direction of the silicon substrate of (100) face taking LT substrate as benchmark, at left to (in Fig. 2 left to) upper mobile 0.5mm, under the state of the upper mobile 0.5mm of lower direction (the lower direction in Fig. 2), two substrates is connected, except this point, make in the same manner as in Example 2 composite base plate 10.That is to say, in embodiment 3, make angle θ=45 °, the diameter of the 1st distance B 1=0.5mm(LT substrate 0.5%), the diameter of the 2nd distance B 2=0.5mm(LT substrate 0.5%), contain amorphous layer by Ar not and connect, the joint face of supporting substrate is made as to (100) face.
Embodiment 4]
Embodiment 4 is: do not make joint face as the silicon substrate of (100) face is rotatably at upwards (left in Fig. 2 to) mobile 0.5mm of left taking LT substrate as benchmark, below upwards under the state of (the lower direction in Fig. 2) mobile 0.5mm, two substrates is connected, except this point, make in the same manner as in Example 3 composite base plate 10.That is to say, in embodiment 4, make angle θ=0 °, the diameter of the 1st distance B 1=0.5mm(LT substrate 0.5%), the diameter of the 2nd distance B 2=0.5mm(LT substrate 0.5%), connect by the amorphous layer that does not contain Ar, the joint face of supporting substrate is made as to (100) face.
Embodiment 5]
Embodiment 5 is: make silicon substrate at upwards (left in Fig. 2 to) mobile 0.5mm of left taking LT substrate as benchmark, under the state of the upper mobile 0.2mm of lower direction (the lower direction in Fig. 2), two substrates is connected, except this point, make in the same manner as in Example 3 composite base plate 10.That is to say, in embodiment 5, make angle θ=45 °, the diameter of the 1st distance B 1=0.5mm(LT substrate 0.5%), the diameter of the 2nd distance B 2=0.2mm(LT substrate 0.2%), connect by the amorphous layer that does not contain Ar, the joint face of supporting substrate is made as to (100) face.
［ comparative example 1 ］
Comparative example 1 is: in the 1st, the 2nd direction of silicon substrate, do not make movably the connection of two substrates taking LT substrate as benchmark, except this point, made in the same manner as in Example 4 composite base plate 10.,, in comparative example 1, make angle θ=0 °, the diameter of the 1st distance B 1=0mm(LT substrate 0%), the diameter of the 2nd distance B 2=0mm(LT substrate 0%), connect by the amorphous layer that does not contain Ar, the joint face of supporting substrate is made as to (100) face.
［ Evaluation of Heat Tolerance ］
Each 20 of the composite base plate that is ready to respectively embodiment 1～5 and comparative example 1 has heated 1 hour by the baking oven of 350 DEG C under the state of wafer.From the cracking of the wafer that causes due to heating and the generation quantity of peeling off, the result of the rate of finished products of embodiment 1～5 and comparative example 1 is as follows.The rate of finished products of embodiment 1 is 100%, embodiment 2 is 70%, embodiment 3 is 40%, embodiment 4 is 30%, embodiment 5 is 20%, comparative example 1 is 10%.Thus, can confirm: angle θ, the 1st distance B 1 and the 2nd distance B 2 are set as to above-mentioned scope, connect by the amorphous layer that contains Ar, and the joint face of supporting substrate is set as to (111) face, to make rate of finished products improve, improve thermal endurance.
[availability in industry]
Composite base plate of the present utility model, for example, except can serve as filter element or the elastic surface wave device of oscillator performance function etc. who uses on mobile phone etc., also can utilize at the Lamb wave element of use piezoelectric membrane and use equally on the elastic wave device such as film harmonic oscillator (FBAR) of piezoelectric membrane.
Claims (6)
1. a composite base plate, is characterized in that, comprising:
Piezoelectric substrate, described piezoelectric substrate possesses plane of orientation, and at least one in its thermal linear expansion coefficient and Young's modulus has anisotropy; And
Supporting substrate, described supporting substrate possesses plane of orientation, and is connected with described piezoelectric substrate, and at least one in its thermal linear expansion coefficient and Young's modulus has anisotropy,
Described piezoelectric substrate is connected in the following manner with described supporting substrate: in the direction of the joint face along mutual, the direction of the plane of orientation along described piezoelectric substrate is made as to the 1st direction, when the direction vertical with the 1st direction is made as to the 2nd direction, the distance of various centers in described the 1st direction the 1st distance B 1 and distance in described the 2nd direction one of them in the 2nd distance B 2 be exceed piezoelectric substrate diameter 0% and below 1%, more than 0% below 1% of another diameter that is piezoelectric substrate.
2. composite base plate according to claim 1, is characterized in that,
More than 0.3% below 1% of the diameter that described the 1st distance B 1 and described the 2nd distance B 2 are all described piezoelectric substrate.
3. according to the composite base plate described in claim 1 or 2, it is characterized in that,
Described piezoelectric substrate is connected with described supporting substrate, and making the angle θ that mutual plane of orientation is is 2 °～60 °.
4. according to the composite base plate described in claim 1 or 2, it is characterized in that,
Described piezoelectric substrate is connected by the amorphous layer that contains Ar with described supporting substrate.
5. according to the composite base plate described in claim 1 or 2, it is characterized in that,
Described supporting substrate is silicon system, and is connected with described piezoelectric substrate on orientation (111) face.
6. composite base plate according to claim 1, is characterized in that,
More than 0.3% below 1.0% of the diameter that described the 1st distance B 1 and described the 2nd distance B 2 are all described piezoelectric substrate, it is 2 °～60 ° that described piezoelectric substrate and described supporting substrate are connected to the angle θ that mutual plane of orientation is, described piezoelectric substrate is connected by the amorphous layer that contains Ar with described supporting substrate, described supporting substrate is silicon system, and is connected with described piezoelectric substrate on orientation (111) face.
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| JP2013005146U JP3187231U (en) | 2013-09-05 | 2013-09-05 | Composite board |
| JP2013-005146 | 2013-09-05 |
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| CN203851109U true CN203851109U (en) | 2014-09-24 |
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- 2013-09-05 JP JP2013005146U patent/JP3187231U/en not_active Expired - Lifetime
- 2013-12-30 CN CN201320884800.5U patent/CN203851109U/en not_active Expired - Lifetime
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