CN203846096U - Sputtering equipment and target thickness measuring system - Google Patents
Sputtering equipment and target thickness measuring system Download PDFInfo
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- CN203846096U CN203846096U CN201420234194.7U CN201420234194U CN203846096U CN 203846096 U CN203846096 U CN 203846096U CN 201420234194 U CN201420234194 U CN 201420234194U CN 203846096 U CN203846096 U CN 203846096U
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 38
- 239000000523 sample Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 25
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The utility model provides sputtering equipment. The equipment comprises a cavity, a backboard arranged at one side of the cavity, a baseplate carrier which can be axially rotated in the cavity, rotating shafts comprising support pillars arranged at two ends of the rotating shafts and laser distance measuring sensors which are arranged on the rotating shafts and comprise probes. The sputtering equipment provided by the utility model is long in service life and has the advantage that the cost is reduced.
Description
Technical field
The utility model relates to a kind of sputtering equipment, in particular, relates in particular to a kind of sputtering equipment and system of measuring target thickness.
Background technology
Sputtering technology is a kind of method of metal film forming, and sputtering technology is utilized the dissociation of high-energy electron,
Make sputter gas ionization form plasma body, if d.c. sputtering, at this time occur with glow discharge phenomenon, described plasma body bombards target under the booster action of electric field, target atom is sputtered transfer to substrate surface to form fine and close film.The advantage of sputtering technology is that gas is less on membranous impact, has that film forming homogeneity is good, high repeatability and other advantages, so applied widely in semiconductor production field.
In sputtering technology process, target is constantly consumed, also attenuate thereupon of its thickness.The variation of target thickness not only exerts an influence to product performance, is also the important evidence that sputtering technology is adjusted simultaneously.And, once target local excessive is used, can cause the bad and structure deteriorate of product, so must be monitored the Expenditure Levels of target.
At present, measuring target thickness special tool is target thickness measurement equipment, and the application documents that publication number is CN103644836A disclose a kind of for measuring the survey meter of target thickness.Survey meter by microscope carrier, be supported horizontally inside the supporter on microscope carrier and can on supporter, form by the range unit of free horizontal slip.When measurement, first target is dismantled in the cavity of sputtering equipment, lies on a fixed bearing stage, then by supporter horizontal support on microscope carrier, by slip range unit, the thickness of target different zones is measured.This kind of apparatus structure complexity, in cannot being placed in the cavity of sputtering equipment, detection need be opened the cavity of sputtering chamber equipment, after being dismantled, target can carry out, the action of answering a pager's call after dismounting, Measure and test complete is all consuming time longer, affect equipment mobility, be unsuitable for detecting in real time and management and control; Owing to can not carrying out Real-Time Monitoring, thickness measurement has hysteresis quality again, easily causes target excessively use and puncture, and causes the bad and structure deteriorate of product.On the other hand, the hysteresis quality of thickness measurement, causes target utilization low, is about 35%, the problem of having brought thus cost to increase.
Utility model content
In view of this, the utility model provides a kind of sputtering equipment, it is characterized in that, comprising:
Cavity;
Backboard, described backboard is arranged at the one side of described cavity;
Baseplate carrier, described baseplate carrier can be in described cavity axial-rotation;
Rotation axis, described rotation axis comprises pillar, described pillar is located at the two ends of described rotation axis;
Laser range sensor, described laser sensor is arranged on described rotation axis, also comprises a probe.
Preferably, described rotation axis is at least two.
Preferably, described rotation axis comprises described in several and popping one's head in.
Preferably, described rotation axis can be along clockwise or counterclockwise 360 ° of rotations.
Preferably, described laser sensor and described rotation axis rotate jointly.
Preferably, a kind ofly comprise described sputtering equipment for measuring the system of target thickness, also comprise a planar target.
Preferably, described target is arranged at described backboard top.
Preferably, the residual thickness Δ T of described target and the deflection angle θ of described laser sensor comprise following relation:
ΔT＝T
0–dsinθ
Wherein, T
0for the axle center of described rotation axis 404 is to the horizontal throw of described backboard 403;
θ is the angle that described laser range sensor 405 rotates;
D is the distance of described laser range sensor 405 to described target 406.
Preferably, describedly also comprise glass substrate for the system of measuring target thickness, described glass substrate is arranged on described baseplate carrier, is oppositely arranged with described target.
The sputtering equipment that the utility model provides, by add laser range sensor and rotation axis in the process cavity of sputtering equipment, by the angle of the continuous rotation transformation of laser range sensor, continuously Laser Measurement distance measuring sensor is to the target distance on surface everywhere, and calculate the actual (real) thickness of this place's target, and then reach and measure accurately the target object of actual consumption amount in process of production.In effectively avoiding target generation punch-through, the utilization ratio of target is risen to 50% by 35%.Thereby in the work-ing life that extends target, reduce costs expenditure.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The schematic diagram of the sputtering equipment that Fig. 1 provides for the utility model embodiment;
The schematic diagram of the sputter unit that Fig. 2 provides for the utility model embodiment;
The principle schematic of the laser range sensor that Fig. 3 provides for prior art;
The distance of the laser ranging that Fig. 4 provides for the utility model embodiment is calculated schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme in embodiment of the present utility model is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
Please refer to Fig. 1 and Fig. 2, the schematic diagram of the sputtering equipment that Fig. 1 provides for the utility model embodiment, the schematic diagram of the sputter unit that Fig. 2 provides for the utility model embodiment.As shown in Figure 1, described sputtering equipment comprises: cavity 101, baseplate carrier 102, backboard 103, rotation axis 104 and laser range sensor 105, below introduce in detail the effect of each parts and position relationship each other.
Described cavity 101 comprises transfer unit 1011 and sputter unit 1012.
Described baseplate carrier 102 initial levels are positioned in described transfer unit 1012, also can vertically be positioned in described sputter unit 1012, for bearing glass substrate 107, and can vacuum suck fixing glass substrate 107 on baseplate carrier 102, in the time of sputtering equipment preparation work described in baseplate carrier 102 drive glass substrate 107 by the level attitude rotation in transfer unit 1011 to the vertical position to sputter unit 1012.
Described backboard 103 is positioned at 1012 inside, described sputter unit, described backboard 103 is tabular and is affixed on the one side setting of described cavity 101, on described backboard 103 for carrying target 106, and can vacuum suck target 106 on backboard 103, be oppositely arranged with the glass substrate 107 of vertical position.
Described rotation axis 104 is at least two, can be oppositely arranged on the both sides of sputter unit 1012, also can be arranged at respectively the surrounding of sputter unit 1012, and can be along clockwise direction or counterclockwise 360 ° of rotations, and the two ends of described rotation axis 104 be individually fixed in the sidewall of described sputter unit 1102.Described rotation axis 104 is for the position of fixed laser distance measuring sensor 105, and described laser range sensor 105 can rotate jointly with described rotation axis 104.
Laser range sensor 105, described laser range sensor 105 also comprises a probe 1051, and described laser sensor 105 can rotate jointly with described rotation axis 104, for also receiving to target 106 Emission Lasers signals the laser signal reflecting, equally spaced several laser range sensors 105 that is distributed with on described rotation axis 104, along with rotation axis 104 drives the common rotation of laser range sensor 105, can be used to monitor the residual thickness of target 106 different positionss.
The principle of work of the sputtering equipment that embodiment provides is described below in conjunction with Fig. 1:
In the time of sputtering equipment preparation work, described backboard 103 vacuum suck targets 106 also make it to be fixed on backboard 103, described backboard 103 and target 106 are arranged in sputter unit 1012, described baseplate carrier 102 is placed horizontally in transfer unit 1011, described glass substrate 107 enters transfer unit 1011 by the family of power and influence 1013, and described glass substrate 107 is fixed on described baseplate carrier 102 tops by vacuum suck, baseplate carrier 102 drives glass substrate 107 together by extremely described sputter unit 1012 of described transfer unit 1011 axial rotation subsequently, become vertical placement from horizontal positioned, final described glass substrate 107 is oppositely arranged with described target 106.
In the time that sputtering equipment is started working, pass into process gas and switch on power to sputter unit 1012 by gas inlet 1014, described sputtering equipment is started working.Process gas after energising is isolated gaseous ion and is bombarded described target 106, has high-octane incident ion and target atom and produces collision, and after the transmission ofenergy by incident ion and target atom, target atom obtains certain kinetic energy disengaging target 106 surfaces and splashes out.The deposited particles sputtering out from target 106 is sputtered onto the surface of described glass substrate 107, deposited particles forms after adatom on glass substrate 107 surfaces, just lost along the kinetic energy of glass substrate 107 normal to a surface directions, only there is the kinetic energy that parallels motion with the surface level direction of glass substrate 107.Rely on this kinetic energy, adatom does the diffusion motion of different directions on the surface of glass substrate 107.In the surface diffusion process of glass substrate 107, between single adatom, after mutual collision formation atom pairs, could produce and condense.Adatom through adsorbing, condense, after surface diffusion migration, collision process in conjunction with forming stable nucleus.Then nucleus is grown up into island by absorption again, and island connects mutually coalescent after growing up, finally form continuous shape film on the surface of glass substrate 107.After described glass substrate 107 film forming are even, baseplate carrier 102 drive glass substrate 107 by vertical position axial-rotation to level attitude, glass substrate 107 separates and is removed from the family of power and influence 1013 with described baseplate carrier 102, completes thus the spatter film forming process of a slice glass substrate 107.
The sputtering equipment that the utility model embodiment provides passes through the as above residual thickness of laser sensor measurement target, can realize the accurate monitoring to target residual thickness, can accurately control the Expenditure Levels of target simultaneously, can effectively avoid damaging with backboard because the target product that excessively use causes is bad, and improve target utilization and production efficiency.
The explanation of the target thickness measurement system providing for the utility model embodiment mono-below, the above-mentioned equipment providing is provided described system, also comprises the glass substrate 107 being arranged on baseplate carrier 102, is arranged on the target 106 on backboard.
In the film process of glass substrate 107, described laser range sensor 105 is along with described rotation axis 104 rotates jointly, described laser range sensor 105 is to target 106 Emission Lasers bundles 108 and receive the laser beam 108 reflecting, come and go the distance between definite laser range sensor 105 of required time of target target 106 and target target 106 by Laser Measurement bundle 108, several laser range sensors 105 are distributing on rotation axis 104 simultaneously, therefore can measure the distance of laser range sensor 105 to each point on target 106, calculate the residual thickness of this target 106 in conjunction with information such as angles.Residual thickness to target 106 arranges low alarm limit, once arrive, triggers pre-alarm, stops in advance producing and changing target.
Please refer to Fig. 3, the principle schematic of the laser range sensor that Fig. 3 provides for prior art.Described laser range sensor comprises: the first eyeglass 309, semiconductor laser 310, the second eyeglass 311, Linear CMOS array 312 (linear complementary MOS array) and signal processor 313.Described semiconductor laser 310 is for Emission Lasers bundle, the laser beam 3081 of semiconductor laser 310 being launched by the first eyeglass 309 focuses on a bit outside described laser range sensor, need the object place of range finding, described the second eyeglass 311 is for collecting the laser beam 3082 of reflection, and the laser beam of collecting is projected on Linear CMOS array 312, signal processor 313 is calculated the light spot position on Linear CMOS array 312 and is obtained the distance apart from object by trigonometrical function subsequently.Because the angle of the laser beam 3081 of incident and the laser beam 3082 of reflection is very approaching, and be all launch and receive by laser range sensor 305, interval time is extremely short, therefore in Fig. 4, the laser beam 3082 of the laser beam of incident 3081 and reflection is considered as to same beam of laser.
Please refer to Fig. 4, the distance of the laser ranging that Fig. 4 provides for the utility model embodiment is calculated schematic diagram.
The residual thickness Δ T of described target 406 and the rotational angle θ of described laser sensor meet following formula (1):
Δ T=T
0– dsin θ formula (1)
Wherein, T
0for the axle center of described rotation axis 404 is to the horizontal throw of described backboard 403;
θ is described laser range sensor 405 rotational angles;
D is the distance of described laser range sensor 405 to described target 406.
Below in conjunction with Fig. 4, formula is specifically described.When sputtering equipment is started working, described laser range sensor 405 is from starting position rotation θ angle, and to target 406 direction Emission Lasers bundles 408, described laser beam 408 contacts target 406 rear section light reflections and returns laser range sensor 405.Δ T is the residual thickness of target 406, T
0for the axle center of described rotation axis 404 is to the horizontal throw of described backboard 403, T is the horizontal throw of described target 406 to the axle center of described rotation axis 404.Relation between three meets following formula (2):
Δ T=T
0– T formula (2)
θ is the angle that described laser range sensor 405 rotates, d is the distance of described laser range sensor 405 to described target 406, α be after described laser range sensor 405 deflection θ angles with the deflection angle of vertical direction, β is laser beam 408 and the deflection angle of vertical direction
According to right-angle triangle theorem, please refer to formula (3), (4), (5):
Alpha+beta=90 ° formula (3)
α+θ=90 ° formula (4)
T=dsin β formula (5)
Can be calculated β=θ through formula (3), (4), bring calculation result β=θ into formula (5), can obtain following equation:
T＝dsinθ
Bring T=dsin θ into formula (2), can obtain following formula:
Δ T=T
0– dsin θ formula (1)
Be formula (1), from this formula, we can find out, the residual thickness Δ T of target is relevant with the angle θ that laser range sensor 405 rotates to distance d and the distance measuring sensor 405 of described target 406.
The target thickness measurement system that the utility model embodiment provides is exactly the residual thickness of measuring target by the mode of employing laser ranging as above, by being arranged at the residual thickness of the real-time control measurement target of laser range sensor of inside cavity, remind staff to change target in limited time reaching under use, can realize the accurate monitoring to target residual thickness, can accurately control the Expenditure Levels of target simultaneously, can solve common sputtering equipment and measure the target thickness problem detecting that need quit work and begin to speak, and solve the problem that causes backboard to puncture due to the excessive use of target when film forming.
To sum up, the sputtering equipment that the utility model provides and system, by the combination of laser range sensor and target equipment, can improve the utilization ratio of target, extend the life-span of target, have improved production efficiency, and the expenditure reducing costs.
Obviously, those skilled in the art can carry out various changes and modification and not depart from spirit and scope of the present utility model utility model.Like this, if these amendments of the present utility model and within modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model is also intended to including these changes and modification.
Claims (9)
1. a sputtering equipment, is characterized in that, comprising:
Cavity;
Backboard, described backboard is arranged at the one side of described cavity;
Baseplate carrier, described baseplate carrier can be in described cavity axial-rotation;
Rotation axis, described rotation axis comprises pillar, described pillar is located at the two ends of described rotation axis;
Laser range sensor, described laser sensor is arranged on described rotation axis, also comprises a probe.
2. sputtering equipment as claimed in claim 1, is characterized in that, described rotation axis is at least two.
3. sputtering equipment as claimed in claim 1, is characterized in that, described rotation axis comprises laser range sensor described in several.
4. sputtering equipment as claimed in claim 1, is characterized in that, described rotation axis can be along clockwise or counterclockwise 360 ° of rotations.
5. sputtering equipment as claimed in claim 1, is characterized in that, described laser sensor and described rotation axis rotate jointly.
6. for measuring a system for target thickness, it is characterized in that, comprise as weighed the sputtering equipment as described in 1, also comprise a planar target.
7. as claimed in claim 6ly it is characterized in that for measuring the system of target thickness, described target is arranged at described backboard top.
8. as claimed in claim 6ly it is characterized in that for measuring the system of target thickness, the residual thickness Δ T of described target and the deflection angle θ of described laser sensor comprise following relation:
ΔT＝T
0–dsinθ
Wherein, T
0for the axle center of described rotation axis (404) is to the horizontal throw of described backboard (403);
θ is the angle that described laser range sensor (405) rotates;
D is the distance of described laser range sensor (405) to described target (406).
9. as claimed in claim 6ly it is characterized in that for measuring the system of target thickness, describedly also comprise glass substrate for the system of measuring target thickness, described glass substrate is arranged on described baseplate carrier, is oppositely arranged with described target.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420234194.7U CN203846096U (en) | 2014-05-08 | 2014-05-08 | Sputtering equipment and target thickness measuring system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420234194.7U CN203846096U (en) | 2014-05-08 | 2014-05-08 | Sputtering equipment and target thickness measuring system |
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| CN203846096U true CN203846096U (en) | 2014-09-24 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951052A (en) * | 2016-06-29 | 2016-09-21 | 昆山国显光电有限公司 | Magnetron sputtering device |
| CN109913838A (en) * | 2019-04-29 | 2019-06-21 | 河南东微电子材料有限公司 | A kind of magnetic control sputtering device extending target service life |
| CN112663015A (en) * | 2020-12-14 | 2021-04-16 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target walking method thereof |
| CN112902888A (en) * | 2021-01-19 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Thickness evaluation method of target assembly |
| CN116904954A (en) * | 2023-07-24 | 2023-10-20 | 江苏先导微电子科技有限公司 | Online film thickness measuring device and online film thickness measuring method |
-
2014
- 2014-05-08 CN CN201420234194.7U patent/CN203846096U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951052A (en) * | 2016-06-29 | 2016-09-21 | 昆山国显光电有限公司 | Magnetron sputtering device |
| CN105951052B (en) * | 2016-06-29 | 2018-10-12 | 昆山国显光电有限公司 | Magnetic control sputtering device |
| CN109913838A (en) * | 2019-04-29 | 2019-06-21 | 河南东微电子材料有限公司 | A kind of magnetic control sputtering device extending target service life |
| CN112663015A (en) * | 2020-12-14 | 2021-04-16 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target walking method thereof |
| CN112902888A (en) * | 2021-01-19 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Thickness evaluation method of target assembly |
| CN116904954A (en) * | 2023-07-24 | 2023-10-20 | 江苏先导微电子科技有限公司 | Online film thickness measuring device and online film thickness measuring method |
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Effective date of registration: 20220104 Address after: No.8, liufangyuanheng Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430074 Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: 201201, 889, Qing Qing Road, Shanghai, Pudong New Area Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |
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Granted publication date: 20140924 |
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