CN203699921U - Device for removing oxygen impurity in polycrystalline silicon by electron beam continuous melting - Google Patents
Device for removing oxygen impurity in polycrystalline silicon by electron beam continuous melting Download PDFInfo
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- CN203699921U CN203699921U CN201320745518.9U CN201320745518U CN203699921U CN 203699921 U CN203699921 U CN 203699921U CN 201320745518 U CN201320745518 U CN 201320745518U CN 203699921 U CN203699921 U CN 203699921U
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 65
- 239000001301 oxygen Substances 0.000 title claims abstract description 65
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 45
- 238000002844 melting Methods 0.000 title claims abstract description 39
- 230000008018 melting Effects 0.000 title claims abstract description 39
- 239000012535 impurity Substances 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 238000003723 Smelting Methods 0.000 claims description 41
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 229910001018 Cast iron Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910001868 water Inorganic materials 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010924 continuous production Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract description 2
- 230000007306 turnover Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 26
- 238000006392 deoxygenation reaction Methods 0.000 description 17
- 239000002210 silicon-based material Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 13
- 238000011161 development Methods 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005272 metallurgy Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004949 mass spectrometry Methods 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model belongs to the field of polycrystalline silicon purification and in particular relates to a device for removing oxygen impurity in polycrystalline silicon by electron beam continuous melting. According to the utility model, a traditional oxygen removal pattern is broken, so that oxygen removal is carried out by electron beam melting to solve the difficulty in removing oxygen impurity in polycrystalline silicon. A turnover mechanism and a loading crucible are added to ensure the semi-continuous production of the electron beam melting oxygen removal, and thus the yield of a single furnace is high. The device disclosed by the utility model has the advantage that (1) the oxygen content can be reduced below 0.0571ppmw and the requirement of the solar cells for the oxygen content of polycrystalline silicon ingots is met after electron beam bombardment melting is carried out for 5-15 minutes; (2) the photoelectric conversion efficiency of solar cells is improved by more than 0.1% compared with polycrystalline silicon without oxygen removal technology; (3) continuous production can be achieved and the production efficiency is improved by above 35%.
Description
Technical field
The utility model belongs to polycrystalline silicon purifying field, is specifically related to the device of oxygen impurities in a kind of electron beam continuous smelting removal polysilicon.
Background technology
At present, China has become world energy sources production and consumption big country, but energy expenditure level is also very low per capita.Along with economical and social development, China's energy demand is by sustainable growth, for current energy shortage situation, deep thinking is all being carried out in countries in the world, and effort improves efficiency of energy utilization, promote the development and application of renewable energy source, reduce the dependence to Imported oil, strengthen energy security.
Solar energy power generating development in recent years as one of important development direction of renewable energy source is swift and violent, and its proportion is increasing.According to " planning of renewable energy source Long-and Medium-term Development ", to the year two thousand twenty, China strives making solar electrical energy generation installed capacity to reach 1.8GW(gigawatt), will reach 600GW to the year two thousand fifty.Expect the year two thousand fifty, the electric power installation of Chinese renewable energy source will account for 25% of national electric power installation, and wherein photovoltaic generation installation will account for 5%.Before estimating the year two thousand thirty, the compound growth rate of Chinese sun power installed capacity will be up to more than 25%.
The development of photovoltaic industry depends on the purification to polycrystalline silicon raw material.The purifying technique of polycrystalline silicon raw material is several technique below main dependence at present: Siemens Method, silane thermal decomposition process, gas fluidized bed method and metallurgy method.Metallurgy method is prepared solar-grade polysilicon technology the only way which must be passed as development low cost, eco-friendly solar-grade polysilicon technology of preparing, has obtained at present tremendous development, and has realized suitability for industrialized production.Metallurgy method purifying polycrystalline silicon refers to the physical metallurgy means that adopt, in the situation that silicon does not participate in chemical reaction occurs, remove successively the method for the various impurity elements (phosphorus, boron and metal) in silicon, it is not single preparation method, but a kind of Integration Method mainly utilizes saturated vapor pressure principle, segregation principle and oxidisability difference principle, adopts respectively different processing methodes, the impurity element of making a return journey in silica removal, thus be met the silicon material of solar energy polycrystalline silicon purity requirement.
In metallurgy method technique, the phosphorus of silicon material, boron, metal impurities all can be removed by effective process means, have reached comparatively ideal effect.But, in to the research of polysilicon solar battery slice electricity conversion, find in recent years, the content of oxygen element produces material impact to the electricity conversion of cell piece, and general oxygen is in the time of interstitial site, conventionally aobvious electroactive, however in casting polycrystalline silicon oxygen concn conventionally 3 × 10
17～1.4 × 10
18cm
-3between, the interstitial oxygen concentration of high density, in device fabrication process subsequently, experiences the thermal treatment of all temps, and meeting segregation and precipitation in silicon crystal form oxygen and close the defects such as alms giver, oxygen precipitation.Simultaneously, in silicon crystal material growth, cooling process because the solubility with temperature of oxygen reduces and declines rapidly, oversaturated oxygen will form primary oxygen precipitation in casting polycrystalline silicon, also may form various complex bodys with other impurity, as N-O, C-O complex body.These oxygen precipitations and complex body thereof not only can reduce the effect of the outer gettering of phosphorus, even directly become the short-channel of battery.
These oxygen defects have the impact of favourable and unfavorable two aspects on silicon materials and device, it can form intrinsic gettering in conjunction with device technology, absorb metallic impurity, all right pinning dislocation, the physical strength of raising silicon chip, but in the time that oxygen precipitation is excessive, can induce again other lattice defect, introduce a large amount of secondary defects, also can attract the metallic elements such as iron, form iron oxygen precipitation complex body, there is very strong few sub-compound ability, can significantly reduce the conversion efficiency of solar cell of material.
In the technique such as directional freeze, ingot casting of metallurgy method, the oxygen element in crucible or the oxygen element passing in gas inevitably can enter into silicon material, are the major causes that oxygen impurities produces.In traditional test silicon, the common method of oxygen level is infrared spectra, respectively HIGH-PURITY SILICON material and batch mixing (scrap stock after casting casting mix with high-purity material) are detected with infrared spectra, in two kinds of material, the content of oxygen is more or less the same, and this has also caused the oxygen impurities of introducing in metallurgy method technique not come into one's own.
In fact, in silicon, oxygen element has two states: substitute position, oxo has been replaced the position of silicon; Gap digit, oxygen is in the gap of Siliciumatom.The oxygen level that in traditional test silicon, the infrared spectra of oxygen level can only detector gap position, can not truly reflect two kinds of oxygen levels in silicon material.Through applicant's experiment test, the oxygen that substitutes position can discharge electronics, similar to the effect that foreign matter of phosphor in silicon produces, and can affect polycrystalline silicon battery plate electricity conversion.Applicant is by sims repeated detection, and in above-mentioned two kinds of silicon material, oxygen element content differs greatly, and is mainly the difference that substitutes the oxygen element content of position.Therefore, can not ignore for the impurity oxygen of introducing in the techniques such as ingot casting, must seek the content of impurity oxygen in effective means reduction silicon.
But, in prior art, not good to the removal effect of oxygen element.For the removal method of oxygen impurities, retrieve the method that mono-kind of utility model patent CN200810070925 reduces oxygen in Pure Silicon Metal, carbon content, this utility model adopts and in silicon liquid, is blown into oxygen, hydrogen and water vapour, hydrogen and oxygen are reacted in silicon liquid and produce localized hyperthermia, oxygen, carbon in silicon liquid are removed with gaseous emission, but the method need to pass into oxygen and hydrogen under silicon molten state, operation easier is large, dangerous high, the removal effect of oxygen is not good.
Utility model content
According to above the deficiencies in the prior art, the utility model proposes a kind of electron beam continuous smelting and remove the device of oxygen impurities in polysilicon, effectively remove impurity oxygen in polysilicon by the mode of electron beam melting, improve the photoelectric transformation efficiency of cell piece with this.
The device of oxygen impurities in polysilicon is removed in electron beam continuous smelting described in the utility model, comprise body of heater, body of heater internal upper part is communicated with feed mechanism and electron beam gun is installed with upper bell, the feeding port below that is positioned at the feed mechanism of body of heater is provided with smelting pot, this smelting pot bottom is provided with switching mechanism, switching mechanism and lower bell interlink, and are positioned at body of heater switching mechanism one side and are mounted with loaded crucible.
Wherein, smelting pot is preferably the water jacketed copper crucible with spill melting pool.Because electron beam melting energy is very high, can easily puncture non-metal kind crucible, therefore selecting metallic copper is the smelting pot that material adds water-cooled again.
Loaded crucible can be water jacketed copper crucible, can be also cast iron die.For loaded crucible, fully take into account silicon liquid and from up to down topple over formed thermal shocking power, prevent loaded crucible to impact damage, therefore select water jacketed copper crucible or cast iron grinding tool.When elected cylinder iron mould, cast iron die can be split-type structural, and surrounding and bottom are formed by connecting by web member, get ingot while conveniently coming out of the stove.
Utilize said apparatus to carry out electron beam continuous smelting and remove oxygen impurities in polysilicon, in electron beam melting furnace, treat deoxygenation polycrystalline silicon material by feed mechanism to sending in smelting pot, and adopt electron beam to form silicon liquid to its fusing, carry out melting deoxygenation, in the time that smelting pot reaches bearing capacity, utilize switching mechanism to pour the silicon liquid in smelting pot into be positioned at electron beam melting furnace inner bottom part loaded crucible, then repeat to treat the melting deoxygenation of deoxygenation polycrystalline silicon material in smelting pot, until reach bearing capacity in loaded crucible, after cooling, can blow-on take out the silicon ingot in loaded crucible.
Preferably carry out according to following steps:
(1) get the raw materials ready: be that to be 10～30mm put into the feed mechanism of electron beam melting furnace until deoxygenation polycrystalline silicon material after cleaning, drying for 4～8ppmw, particle diameter by oxygen level;
(2) pre-treatment: cooling water circulation to electron beam melting furnace unlatching, to vacuumizing processing in electron beam melting furnace, be evacuated to below 0.05Pa; Electron beam gun is vacuumized to processing, be evacuated to below 0.005Pa, then carry out preheating, after pre-thermionic electron guns 10～15min, close preheating;
(3) melting is purified: start feed mechanism, continue, to feeding in smelting pot, in the time that the bearing capacity in smelting pot reaches 1/4～1/3, to close feed mechanism; Start electron beam gun, setting electron beam gun line is 200～1200mA, and the beam energy of controlling electron beam gun distributes, and the deoxygenation polycrystalline silicon material for the treatment of adding is fused into silicon liquid, then continues bombardment melting; Start switching mechanism, pour the silicon liquid in smelting pot into be positioned at electron beam melting furnace inner bottom part loaded crucible, then smelting pot resets;
(4) repeating step (3) until reach bearing capacity in loaded crucible, is closed electron beam gun, through cooling to below 200 ℃, closes vacuum system, takes out the silicon ingot in loaded crucible to blow-on after inflation in electron beam melting furnace.
Wherein, the time of the bombardment melting in step (3) is 5～15min, guarantees that melting is abundant, and deaerating effect is high.
In the utility model, break traditional deoxygenation pattern, but adopted electron beam melting to carry out deoxygenation, solved the difficult problem that in polysilicon, impurity oxygen is removed.Adding of switching mechanism and loaded crucible, has guaranteed the semi-continuous production of e-book melting deoxygenation, and single stove yield is high.
The utility model has the advantage of: (1) is through the beam bombardment melting of 5～15min, polysilicon after deoxygenation detects through second ion mass spectroscopy (SIMS), its oxygen level is lower than second ion mass spectroscopy limit of detection, lower than 0.0571ppmw, meet the requirement of solar cell to polycrystalline silicon ingot casting oxygen level; (2), compared with not carrying out the polysilicon of deoxygenation technology, improve the photoelectric transformation efficiency of cell piece more than 0.1%; (3) can realize serialization and produce, enhance productivity more than 35%.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
In figure: 1, body of heater 2, feed mechanism 3, electron beam gun 4, smelting pot 5, switching mechanism 6, loaded crucible.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described further.
Embodiment 1:
As shown in Figure 1, the device of oxygen impurities in polysilicon is removed in a kind of electron beam continuous smelting, comprise body of heater 1, body of heater 1 internal upper part is communicated with upper bell feed mechanism 2 and electron beam gun 3 is installed, the feeding port below that is positioned at the feed mechanism 2 of body of heater 1 is provided with smelting pot 4, these smelting pot 4 bottoms are provided with switching mechanism 5, and switching mechanism 5 interlinks with lower bell, is positioned at body of heater 1 switching mechanism one side and is mounted with loaded crucible 6.
Wherein, smelting pot 4 is the water jacketed copper crucible with spill melting pool.Because electron beam melting energy is very high, can easily puncture non-metal kind crucible, therefore selecting metallic copper is the smelting pot 4 that material adds water-cooled again.
Loaded crucible 6 is cast iron die.For loaded crucible 6, fully take into account silicon liquid and from up to down topple over formed thermal shocking power, prevent loaded crucible 6 to impact damage, therefore select cast iron grinding tool.Cast iron die is split-type structural, and surrounding and bottom are formed by connecting by web member, gets ingot while conveniently coming out of the stove.
Embodiment 2:
Adopt the device of embodiment 1, carry out electron beam continuous smelting and remove oxygen impurities in polysilicon, carry out in accordance with the following methods:
(1) get the raw materials ready: be that to be 10～30mm put into the feed mechanism 2 of electron beam melting furnace until deoxygenation polycrystalline silicon material after cleaning, drying for 4～8ppmw, particle diameter by oxygen level;
(2) pre-treatment: cooling water circulation to electron beam melting furnace unlatching, to vacuumizing processing in electron beam melting furnace, be evacuated to below 0.05Pa; Electron beam gun 3 is vacuumized to processing, be evacuated to below 0.005Pa, then carry out preheating, pre-thermionic electron guns 3, after 10min, is closed preheating;
(3) melting is purified: start feed mechanism 2, continue, to the interior feeding of smelting pot 4, in the time that the bearing capacity in smelting pot 4 reaches 1/4, to close feed mechanism; Start electron beam gun 3, setting electron beam gun 3 lines is 800mA, and the beam energy of controlling electron beam gun 3 distributes, and only strafes the region of silicon material, and the deoxygenation polycrystalline silicon material for the treatment of adding is fused into silicon liquid, then continues bombardment 10min; Start switching mechanism 5, the silicon liquid in smelting pot 4 is poured into the loaded crucible 6 that is positioned at electron beam melting furnace inner bottom part, then smelting pot 4 resets;
(4) repeating step (3) until reach bearing capacity in loaded crucible 6, is closed electron beam gun 3, through cooling to below 200 ℃, closes vacuum system, takes out the silicon ingot in loaded crucible 6 to blow-on after inflation in electron beam melting furnace.Polysilicon after deoxygenation detects through second ion mass spectroscopy (SIMS), and its oxygen level is lower than second ion mass spectroscopy limit of detection, lower than 0.0571ppmw.
Embodiment 3:
Adopt the device of embodiment 1, carry out electron beam continuous smelting and remove oxygen impurities in polysilicon, carry out in accordance with the following methods:
(1) get the raw materials ready: be that to be 10～30mm put into the feed mechanism 2 of electron beam melting furnace until deoxygenation polycrystalline silicon material after cleaning, drying for 4～8ppmw, particle diameter by oxygen level;
(2) pre-treatment: cooling water circulation to electron beam melting furnace unlatching, to vacuumizing processing in electron beam melting furnace, be evacuated to below 0.05Pa; Electron beam gun 3 is vacuumized to processing, be evacuated to below 0.005Pa, then carry out preheating, pre-thermionic electron guns 3, after 15min, is closed preheating;
(3) melting is purified: start feed mechanism 2, continue, to the interior feeding of smelting pot 4, in the time that the bearing capacity in smelting pot 4 reaches 1/3, to close feed mechanism; Start electron beam gun 3, setting electron beam gun 3 lines is 1000mA, and the beam energy of controlling electron beam gun 3 distributes, and only strafes the region of silicon material, and the deoxygenation polycrystalline silicon material for the treatment of adding is fused into silicon liquid, then continues bombardment 15min; Start switching mechanism 5, the silicon liquid in smelting pot 4 is poured into the loaded crucible 6 that is positioned at electron beam melting furnace inner bottom part, then smelting pot 4 resets;
(4) repeating step (3) until reach bearing capacity in loaded crucible 6, is closed electron beam gun 3, through cooling to below 200 ℃, closes vacuum system, takes out the silicon ingot in loaded crucible 6 to blow-on after inflation in electron beam melting furnace.Polysilicon after deoxygenation detects through second ion mass spectroscopy (SIMS), and its oxygen level is lower than second ion mass spectroscopy limit of detection, lower than 0.0571ppmw.
Claims (5)
1. the device of oxygen impurities in an electron beam continuous smelting removal polysilicon, comprise body of heater, it is characterized in that body of heater internal upper part is communicated with feed mechanism and electron beam gun are installed with upper bell, the feeding port below that is positioned at the feed mechanism of body of heater is provided with smelting pot, this smelting pot bottom is provided with switching mechanism, switching mechanism and lower bell interlink, and are positioned at body of heater switching mechanism one side and are mounted with loaded crucible.
2. the device of oxygen impurities in polysilicon is removed in electron beam continuous smelting according to claim 1, it is characterized in that smelting pot is the water jacketed copper crucible with spill melting pool.
3. the device of oxygen impurities in polysilicon is removed in electron beam continuous smelting according to claim 1, it is characterized in that loaded crucible is water jacketed copper crucible.
4. the device of oxygen impurities in polysilicon is removed in electron beam continuous smelting according to claim 1, it is characterized in that loaded crucible is cast iron die.
5. the device of oxygen impurities in polysilicon is removed in electron beam continuous smelting according to claim 4, it is characterized in that cast iron die is split-type structural, and surrounding and bottom are formed by connecting by web member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320745518.9U CN203699921U (en) | 2013-11-22 | 2013-11-22 | Device for removing oxygen impurity in polycrystalline silicon by electron beam continuous melting |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320745518.9U CN203699921U (en) | 2013-11-22 | 2013-11-22 | Device for removing oxygen impurity in polycrystalline silicon by electron beam continuous melting |
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| CN203699921U true CN203699921U (en) | 2014-07-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104649274A (en) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | Method for removing oxygen impurities in polysilicon through electron beam continuous melting, and apparatus thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104649274A (en) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | Method for removing oxygen impurities in polysilicon through electron beam continuous melting, and apparatus thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171117 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266234 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171206 Address after: Miao road Laoshan District 266000 Shandong city of Qingdao Province, No. 52 906 Patentee after: Qingdao Changsheng Electric Design Institute Co. Ltd. Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140709 Termination date: 20191122 |
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| CF01 | Termination of patent right due to non-payment of annual fee |