CN203660051U - High-frequency micro-strip antenna with high-resistance silicon substrate - Google Patents
High-frequency micro-strip antenna with high-resistance silicon substrate Download PDFInfo
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- CN203660051U CN203660051U CN201320830533.3U CN201320830533U CN203660051U CN 203660051 U CN203660051 U CN 203660051U CN 201320830533 U CN201320830533 U CN 201320830533U CN 203660051 U CN203660051 U CN 203660051U
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000001039 wet etching Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 4
- 230000000873 masking effect Effects 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 239000002699 waste material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 101100110009 Caenorhabditis elegans asd-2 gene Proteins 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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Abstract
该实用新型属于天线技术领域中采用高阻硅作基底的微带天线，该高阻硅基底高频微带天线包括高阻硅基底及设于其底部的正四棱锥台形凹槽，设于基底上表面的带简并单元的辐射贴片及其馈线，接地片。该实用新型由于将高阻硅基底背面的空气槽设计成正四棱锥台形凹槽，因而可采用MEMS湿法刻蚀，自动将四棱锥台形凹槽的锥面刻蚀成与该材料晶向界面角相同角度的锥形面，且不会产生废弃物掩蔽层，其刻蚀的速率及凹槽顶面的平整度分别较是背景技术提高20倍及10倍左右。因而具有器件结构设计先进、生产工艺简便，生产效率高、成品率高，微波损耗低、辐射效率高，器件性能优异，易于集成组成阵列式微带天线，而且生产成本低并可满足规模化生产的要求等特点。
The utility model belongs to the microstrip antenna using high-resistance silicon as a substrate in the field of antenna technology. Radiating patch with degenerate elements on the surface and its feeder, grounding patch. Since the utility model designs the air groove on the back of the high-resistance silicon substrate as a regular truncated pyramidal groove, it can use MEMS wet etching to automatically etch the tapered surface of the truncated pyramidal groove to the interface angle with the crystal direction of the material. The tapered surface with the same angle does not produce a waste masking layer, and the etching rate and the flatness of the top surface of the groove are respectively increased by about 20 times and 10 times compared with the background technology. Therefore, it has advanced device structure design, simple production process, high production efficiency, high yield, low microwave loss, high radiation efficiency, excellent device performance, easy integration to form an array microstrip antenna, and low production cost and can meet the requirements of large-scale production. requirements etc.
Description
Technical field
The utility model belongs to microstrip antenna technical field, particularly a kind of X-band microstrip antenna that adopts High Resistivity Si to do substrate, backside of substrate to be provided with positive tetragonous cone table shape air groove; This antenna had both had high efficiency, high-gain, high power, was easy to again integrated composition array microstrip antenna, can be widely used in the technical fields such as fishing boat navigation, deep space communication, conventional ammunition intellectualized reconstruction.
Background technology
At present at aspects such as conventional deep space communication, the navigation of civilian fishing boat, ammunition intellectualized reconstruction, UAV Communications, lightness to equipment, small size, lightweight, low in energy consumption, digital technology etc. all have higher requirement.From the proposition of nineteen fifties microstrip antenna concept, to the research and development manufacture of the practical microstrip antenna of the seventies, to the eighties microstrip antenna further developing in theoretical and application.So far, due to the development of MEMS technology, microstrip antenna rely on its thin profile, volume little, lightweight, have outside planar structure, low cost and other advantages, can also integrate with radio-frequency front-end, stability and the reliability of the system improving, be easy to the advantages such as production in enormous quantities; And in aerospace flight vehicle, mobile communication equipment, hand-hold communication appliance, there is good performance.
The substrate of conventional microstrip antenna generally adopts the making of the material such as polytetrafluoroethylene, pottery, adopts these materials to do substrate, and the one, efficiency is low, can not make high power microstrip antenna, and the 2nd, be difficult to miniaturization, be also not easy to the defects such as integrated; If adopt High Resistivity Si to do the substrate of microstrip antenna, although High Resistivity Si microstrip antenna has high power than the paster antenna of doing substrate (as polytetrafluoroethylene etc.) with low-k, highly integrated, the advantage of Miniaturizable.But the dielectric constant of High Resistivity Si material is high, be positioned at the suprabasil paster antenna of high-k because the loss of surface wave is large, radiation efficiency is very low, and frequency bandwidth is extremely narrow, and this situation is more outstanding in the time of frequency gets higher, thereby cause gain and the decrease in efficiency of paster antenna, this has also just hindered High Resistivity Si effective application in microstrip antenna as base material.The applicant is the high power that the micro-strip paster antenna of substrate has in order to make full use of High Resistivity Si, high integration, the advantage of miniaturization; And the loss that overcomes its surface wave is large, radiation efficiency is very low, the defect such as frequency bandwidth is extremely narrow.On the basis of furtheing investigate at the micro-strip paster antenna that is substrate to employing High Resistivity Si, " the Mechanicac Engineering and Automation international conference " held in Japan on August 4th, 2013 is upper, has delivered the paper that name is called " The Inversion law in MEMS Microstrip Array Antenna Manufacturing " (Chinese name: take MEMS as manufacturing the inverting rule of basic array microstrip antenna).This paper discloses one and has been operated in 4.5GHz(C wave band) microstrip antenna.It is that the High Resistivity Si that 20000ohmcm, dielectric constant are 11.9 is done substrate that this microstrip antenna adopts resistivity, and thickness is 500 μ m; In order to reduce the dielectric constant of radiation patch below medium substrate, this article is square for radiation patch, and adopt ICP lithographic technique just the back-etching of radiation patch below High Resistivity Si substrate to be gone out to the square air groove that a degree of depth is 250 μ m and radiation patch form fit, thereby make radiation patch and the formation of the substrate in interior region " air-High Resistivity Si " composite substrate containing air groove, its dielectric constant is air, both compound dielectrics of High Resistivity Si; This technology is owing to having set up air groove in just to the substrate under radiation patch, thereby makes radiation patch and be reduced to 1.84 at the dielectric constant of interior substrate by 11.9 containing air groove; Voltage standing wave ratio VSWR=1.26 when this antenna is operated in 4.5GHz frequency range, gain are that 8.134dB, radiation efficiency are 0.683, and can form flexibly and easily array.But to go out the square air groove mating with radiation patch at the back-etching of High Resistivity Si substrate, can only adopt comparatively advanced at present ICP lithographic method (being dry etching).But because High Resistivity Si resistivity is too high, the parameter of equipment is wayward, generally etch into 40 μ m and cause etching to be difficult to carry out smoothly because etching discarded object is piled into masking layer after above, and etching complete after the evenness of air groove end face also very poor; Production practices prove to adopt the High Resistivity Si of ICP etching 6.20mm × 6.20mm plane, when etching depth reaches 100 μ m when above, its difference in height (unevenness) reaches 10 μ m(± 5 μ m), shows that through electric performance test this unevenness has had a strong impact on the performance of microstrip antenna; In addition ICP etching also exist etch rate (only 3 μ m/min) and productivity ratio low, rate of finished products is low, processing cost is high, the defect such as cannot accomplish scale production.
Summary of the invention
The purpose of this utility model is the defect existing for background technology; improve a kind of High Resistivity Si substrate high-frequency microstrip antenna of design; effectively improving on the basis of the electrical properties such as microstrip antenna gain and radiation efficiency to reach; simplified processing process, raising crudy, productivity ratio and rate of finished products; and reduce production costs, fully meet the objects such as the requirement of large-scale production.
Solution of the present utility model is according to the structure of High Resistivity Si material (crystal orientation) feature and performance, by just the air groove of radiation patch below High Resistivity Si backside of substrate being designed to positive tetragonous cone table connected in star, to adapt to MEMS wet-etching technology; The utility model utilizes High Resistivity Si in MEMS wet etching process, can successfully etch its face angle tetragonous cone table connected in star consistent with corresponding High Resistivity Si crystal orientation interfacial angle, in etching process, can not produce discarded object masking layer yet, thereby can increase substantially productivity ratio, rate of finished products, reduce production costs; The evenness of end face that simultaneously improves air groove by wet etching is to improve the performance such as radiation efficiency of microstrip antenna; The utility model realizes its goal of the invention with this.Thereby the utility model High Resistivity Si substrate high-frequency microstrip antenna comprises High Resistivity Si substrate and is located at the groove of substrate bottom, be located at the radiation patch with degeneracy unit and the feeder line thereof of upper surface of substrate, ground strip, the groove that key is to be located at substrate bottom is positive tetragonous cone table connected in star, and ground strip offers the square hole equating with the positive tetragonous cone table connected in star infraoral length of side in the position that just aligns tetragonous cone table connected in star; Radiation patch with degeneracy unit and feeder line thereof are anchored on the upper surface of substrate, the bottom surface that wherein radiation patch is just aligning tetragonous cone table connected in star, ground strip and High Resistivity Si substrate is tightened to one, the center of radiation patch, the positive center of tetragonous cone table connected in star and being centered close on same axis of ground strip square hole.
Above-mentioned positive tetragonous cone table connected in star, the face angle (being the angle of the each side of groove and bottom surface) of the each side of groove is 45 °-54.7 °, the number of degrees of its face angle determine according to the crystal orientation of adopted High Resistivity Si base material.In the time that described high-frequency microstrip antenna is array microstrip antenna, the feed side of feeder line and power division section are carried out power division to each radiation patch in the lump.
The utility model is owing to the air groove of High Resistivity Si backside of substrate being designed to positive tetragonous cone table connected in star, according to the structure of High Resistivity Si material (crystal orientation) feature and performance, in the time adopting MEMS wet etching, under the effect of etching liquid, automatically the conical surface of taper type groove is etched into the taper surface with this material crystal orientation interfacial angle equal angular, and in etching process, can not produce discarded object masking layer yet, the speed of etching can reach 60 μ m/min, be 20 times of ICP etch rate 3 μ m/min, thereby production efficiency is high; And the end face of groove is smooth, smooth, its unevenness only ± 0.5 μ, compared with background technology ± evenness of 5 μ m, groove end face improved 10 times, greatly reduced the lossy microwave of High Resistivity Si substrate, voltage standing wave ratio VSWR=1.07, declines nearly 0.2 compared with background technology.Thereby, the utlity model has device structure design advanced person, production technology is easy, production efficiency is high, rate of finished products is high; lossy microwave is low, radiation efficiency is high; device performance excellence, is easy to integrated composition array microstrip antenna, and production cost is low and can meet the features such as the requirement of large-scale production.
Accompanying drawing explanation
Fig. 1 is the utility model and embodiment 1 microstrip antenna vertical view;
Fig. 2 is the utility model and embodiment 1 microstrip antenna cutaway view;
Fig. 3 is the utility model embodiment 2 microstrip antenna vertical views;
Fig. 4 is the utility model embodiment 2 microstrip antenna cutaway views;
Fig. 5 is the gain pattern of the utility model embodiment 2 microstrip antennas;
Fig. 6 is the return loss S11 curve chart of the utility model embodiment 2 microstrip antennas;
Fig. 7 is the VSWR figure of the utility model embodiment 2 microstrip antennas.
In figure: 1. High Resistivity Si substrate, 2. positive tetragonous cone table connected in star, 3. radiation patch, 3-1. degeneracy be from unit, and 4,4-1,4-2,4-3: feeder line, 5. ground strip.
Embodiment
The present embodiment is take single card sheet microstrip antenna as example: High Resistivity Si substrate 1 relative dielectric constant as 11.9, resistivity 20000 Ω cm, loss angle tangent 0.005, crystal orientation are [111], volume (long × wide × thick) 11.2mm × 11.2mm × 300 μ m, the face angle of positive tetragonous cone table connected in star 2 is end face (long × wide) 6.426 × 6.426mm on 45 °, groove, infraoral (long × wide) 6.726 × 6.726mm, the dark 150 μ m of groove; Radiation patch 3(is long × wide) 6.20 × 6.20mm, degeneracy on it be to clip respectively two length of sides in the lower right corner of radiation patch 3 and the upper left corner and be the isosceles triangle gained of 0.7mm from this length of the long 0.9899mm(of unit 3-1), in feed line impedance 50 Ω, feeder line: 4(is long × wide) 2.5 × 0.072mm, 4-1(grow × wide) 0.290 × 0.280mm; Ground strip 5(is long × wide) 11.2 × 11.2mm, offer the square hole of one (long × wide) 6.726 × 6.726mm in the position that just aligns tetragonous cone table connected in star 2; The material of radiation patch 3, feeder line 4,4-1 and ground strip 5 is gold, thickness is 0.015mm.
It is that 60 μ m/min(adopt ICP etching to improve 20 times that positive tetragonous cone table connected in star 2 in the present embodiment High Resistivity Si substrate 1 adopts KOH solution wet etching, etch rate), can natural shape in etching process face angle at 45 °, after etching, two groove end face unevenness are ± 0.5 μ, are only 1/10th of background technology ICP etching.
Embodiment 2
The two-element antenna device of the present embodiment take operating frequency as 12GHz is example: High Resistivity Si substrate 1 adopt resistivity as 20000 Ω cm, relative dielectric constant as 11.9, loss angle tangent 0.005, crystal orientation be the High Resistivity Si of [100], substrate (long × wide × thick) 21.0mm × 15.4mm × 500 μ m, the positive tetragonous cone table connected in star 2 in bottom are symmetrical arranged the positive tetragonous cone table connected in star of two upper bottom surfaces for (long × wide) 6.426 × 6.426mm, lower bottom opening (long × wide) 6.780 × 6.780mm, the dark 250 μ m of groove; Each radiation patch 3(is long × wide) 6.20 × 6.20mm, on it, each degeneracy is to clip respectively two length of sides in the lower right corner of two radiation patch 3 and the upper left corner and be the isosceles triangle gained of 0.7mm from this length of the long 0.9899mm(of unit 3-1); The impedance of feeder line and each radiation patch 3 linkage sections is 50 Ω, in its feeder line: 4-1(is long × wide) 0.290 × 0.280mm, 4-2(length × wide) 2.5 × 0.064mm, the feed side 4 of the wide 0.2mm of being of power division section 4-3, overall length (6.8mm × 2) 13.6mm, feeder line is connected and coordinates and carry out power division with power division section 4-3 with its middle part, and feed side 4(is long × wide) 2.504 × 0.524mm; Ground strip 5(is long × wide) position of 21.0 × 15.4mm, corresponding two positive tetragonous cone table connected in stars 2 respectively offers the square hole of one (growing × wide) 6.780 × 6.780mm; The material of radiation patch 3, feeder line 4,4-1,4-2,4-3 and ground strip 5 is gold, thickness is 0.015mm.
It is that 60 μ m/min(have improved 20 times compared with background technology ICP etching that the positive tetragonous cone table connected in star 2 of in High Resistivity Si substrate 1 two adopts the present embodiment KOH solution wet etching, etch rate), can self-assembling formation in etching process the face angle of 54.7 °, after etching, two groove end face unevenness are ± 0.5 μ, are only 1/10th of background technology ICP etching.
The present embodiment, in the time that the operating frequency of X-wave band autenna is 12GHz, gains as 7.8399dB, and radiation efficiency is 0.941, S
11=-28.91, VSWR=1.07; Fig. 5, Fig. 6, Fig. 7 are respectively the VSWR figure of gain pattern, return loss S11 curve chart and the antenna of the present embodiment emulation experiment gained microstrip antenna.
Claims (3)
1. a High Resistivity Si substrate high-frequency microstrip antenna, comprise High Resistivity Si substrate and be located at the groove of substrate bottom, be located at the radiation patch with degeneracy unit and the feeder line thereof of upper surface of substrate, ground strip, the groove that it is characterized in that being located at substrate bottom is positive tetragonous cone table connected in star; Radiation patch with degeneracy unit and feeder line thereof are close to the upper surface of substrate, the bottom surface that wherein radiation patch is just aligning tetragonous cone table connected in star, ground strip and High Resistivity Si substrate is tightened to one, the center of radiation patch, the positive center of tetragonous cone table connected in star and being centered close on same axis of ground strip square hole.
2. by High Resistivity Si substrate high-frequency microstrip antenna described in claim 1, the face angle that it is characterized in that the each side of described positive tetragonous cone table connected in star is 45 °-54.7 °, and the number of degrees of face angle determine according to the crystal orientation of adopted High Resistivity Si base material.
3. by High Resistivity Si substrate high-frequency microstrip antenna described in claim 1, it is characterized in that, in the time that described high-frequency microstrip antenna is array microstrip antenna, the feed side of feeder line and power division section are carried out power division to each radiation patch in the lump.
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| CN201320830533.3U CN203660051U (en) | 2013-12-16 | 2013-12-16 | High-frequency micro-strip antenna with high-resistance silicon substrate |
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| CN201320830533.3U CN203660051U (en) | 2013-12-16 | 2013-12-16 | High-frequency micro-strip antenna with high-resistance silicon substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730725A (en) * | 2013-12-16 | 2014-04-16 | 电子科技大学 | High-frequency micro-strip antenna with substrate made of high resistance silicon |
| CN106044702A (en) * | 2016-04-29 | 2016-10-26 | 电子科技大学 | An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device |
| CN108400435A (en) * | 2018-02-12 | 2018-08-14 | 上海矽杰微电子有限公司 | A kind of printed circuit board of millimeter wave micro-strip antenna |
| CN109075437A (en) * | 2016-05-10 | 2018-12-21 | 诺瓦特公司 | Use the stack paster antenna of the dielectric base plate with patterned cavity |
| CN110474159A (en) * | 2019-09-02 | 2019-11-19 | 上海南麟电子股份有限公司 | A kind of miniature spherical-reflector antenna and array antenna and preparation method thereof based on MEMS technology |
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2013
- 2013-12-16 CN CN201320830533.3U patent/CN203660051U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730725A (en) * | 2013-12-16 | 2014-04-16 | 电子科技大学 | High-frequency micro-strip antenna with substrate made of high resistance silicon |
| CN103730725B (en) * | 2013-12-16 | 2016-04-20 | 电子科技大学 | A kind of high-frequency micro-strip antenna with substrate made of high resistance silicon |
| CN106044702A (en) * | 2016-04-29 | 2016-10-26 | 电子科技大学 | An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device |
| CN109075437A (en) * | 2016-05-10 | 2018-12-21 | 诺瓦特公司 | Use the stack paster antenna of the dielectric base plate with patterned cavity |
| US10985467B2 (en) | 2016-05-10 | 2021-04-20 | Novatel Inc. | Stacked patch antennas using dielectric substrates with patterned cavities |
| US11888242B2 (en) | 2016-05-10 | 2024-01-30 | Novatel Inc. | Stacked patch antennas using dielectric substrates with patterned cavities |
| CN108400435A (en) * | 2018-02-12 | 2018-08-14 | 上海矽杰微电子有限公司 | A kind of printed circuit board of millimeter wave micro-strip antenna |
| CN108400435B (en) * | 2018-02-12 | 2020-11-03 | 浙江芯力微电子股份有限公司 | Printed circuit board of millimeter wave microstrip antenna |
| CN110474159A (en) * | 2019-09-02 | 2019-11-19 | 上海南麟电子股份有限公司 | A kind of miniature spherical-reflector antenna and array antenna and preparation method thereof based on MEMS technology |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 Termination date: 20161216 |