CN203562415U

CN203562415U - A new wafer carrier device

Info

Publication number: CN203562415U
Application number: CN201320687868.4U
Authority: CN
Inventors: 凌复华; 吴凤丽; 国建花
Original assignee: Piotech Shenyang Co Ltd
Current assignee: Piotech Inc
Priority date: 2013-11-01
Filing date: 2013-11-01
Publication date: 2014-04-23
Anticipated expiration: 2023-11-01

Abstract

The utility model provides a novel wafer carrier, which aims at solving the problems that a present wafer carrier cannot stably carry a wafer and leads to technical failure. The novel wafer carrier comprises an aluminum heating plate, a ring is inlaid into the outer edge of the aluminum heating plate, and internally provided with a groove, the edge of the groove of the ring makes direct contact with the lower surface of the outermost circumference of the wafer to support the wafer, and a ball is mounted at the center of the heating plate or multiple balls are uniformly mounted at the same circumference of the plate, wherein the ring is made of aluminum or ceramic, and the ball is made of sapphire or aluminum or ceramic. The novel wafer carrier is improved based on an original heating plate, and a simple and reliable inlaid structure is used, so that both the ring and heating plate are convenient to process and install, the cost is greatly saved, and the technical effect of the novel wafer carrier is better than that of an original purely-aluminum heating plate.

Description

A kind of Novel wafer bogey

Technical field

The utility model relates to a kind of semiconductor coated film equipment wafer bearing device, is exactly a kind of new structure that utilizes the edge of ring to realize the support to wafer, belongs to semiconductive thin film deposition applications and manufacturing technology field.

Background technology

Semiconductor coated film equipment is in technical process, in order to prevent Particle(granularity) produce, utilization is placed multiple sapphire balls and is realized the carrying to wafer below wafer.Sapphire ball is positioned on heating plate, is distributed on the circumference of different-diameter, exceeds heating plate equal height, and they realize the support to wafer jointly.But because the material of heating plate is generally aluminium, jewel ball hole can exist deformation under long term high temperature state, causes jewel ball not take out, or the height of jewel ball is no longer consistent, or high or low, entirety height is uneven.In the time of will causing like this wafer to drop on jewel ball, no longer in the same plane, or tilt or occur slide plate, thereby cause technique failure.In addition, due to when the high temperature, jewel ball hole has deformation tendency bigger than normal.Thereby causing having in technical process the phenomenon that jewel ball taken out of occurs.Can cause like this jewel ball fall in card or fall in chamber.If jewel ball is fallen in card, after wafer falls, this place can be local raised, causes the slip of wafer.If jewel ball is fallen in chamber, need to begin to speak to take out, in order to avoid tumble other mechanism places, affect the normal use of other mechanisms.Because jewel ball height exceeds card, between wafer rear and card, there is certain gap, when process gas enters, have portion gas can enter into wafer rear, thereby cause rainbow film or Particle(granularity) produce.In any case, all can cause technique normally to carry out, have influence on the normal operation of equipment.

Summary of the invention

The utility model to be to address the above problem as object, mainly solves realization that existing wafer bearing device can not be the well stable carrying to wafer, causes the problem of technique failure.

For achieving the above object, the utility model adopts following technical proposals: this novel wafer bearing device is by inlaying a ring in aluminium heating plate outer rim, the inside of ring arranges a groove, the recess edge of ring directly contacts with the outermost circumference lower surface of wafer, thereby realizes the support to wafer.Meanwhile, in heating plate center, a ball is installed, or in the card that is positioned at same circumference, multiple uniform balls is installed.When wafer deforms, wafer can will be held by ball, and can directly not touch heating plate.

Above-mentioned ring, its material can be that aluminium can be also pottery.Consider the stability of serviceability, if adopt aluminium, the surface of this ring will process, and as hard anodized, plating one deck pottery, or surface fluorination processing, generate one deck aluminum fluoride.

Above-mentioned ball, the material of employing can be sapphire, can be aluminium, pottery or other resistant to elevated temperatures materials.

Ring is embedded in the outer rim of heating plate, and the contact-making surface of it and heating plate is plane.The upper surface of ring is provided with concave station rank in the inner part.These concave station rank are a little more than the boss of heating plate.Even if placed ball on heating plate, its total height also can not exceed the height on the concave station rank of ring.Be that the maximum height of ball is all the time lower than the recessed ledge surface encircling.Thereby it is upper to guarantee that the wafer of placing drops on ring completely, can not have directly and contact with heating plate.Meanwhile, the upper surface of wafer in groove, can not exceed the upper surface of ring all the time.The diameter on ring concave table rank is slightly larger than brilliant diameter of a circle, and the degree of depth is slightly larger than the thickness of wafer.Because considering thermal expansion, therefore the minimum diameter place of ring is less than brilliant diameter of a circle, but slightly larger than the boss diameter of heating plate.Guarantee when mounted, can and the boss of heating plate between keep certain gap., guarantee under technological temperature, the two is in concentric meanwhile, and between do not have contact.During use, ring is concentric installation with heating plate, is embedded in the edge of heating plate.The external diameter of this ring is larger than the external diameter of heating plate, being heated to 400 while spending, still can cover heating plate comprehensively, can avoid the edge exposure of heating plate, to protect heating plate.No matter, in normal temperature state or the condition of high temperature, wafer outer rim below is pottery or the surface of processing all the time, there is no exposed aluminium, thereby has avoided sparking (Arcing) appearance.Because the edge of wafer periphery and ring is one week contact-making surface, the contact area of the two is not too large, and one-side contact face is within 2mm.So when process gas enters, do not have gas and enter into wafer rear, just can not produce rainbow film or deposition Particle(granularity at wafer rear yet).

The beneficial effects of the utility model and feature: on the basis of original heating plate, improve, adopt simple and reliable embedded structure, make ring and the processing of heating plate, install all very convenient.Whole process operation is simple, quick.And realizing under the prerequisite of its basic function demand, that is: can realize completely original heating plate to the carrying of wafer outside, can also avoid the appearance of the spark phenomenon causing because aluminium is exposed, thereby well guarantee validity, the accuracy of process results, guarantee the normal production capacity of equipment.Meanwhile, ring, ball and the heating plate that this wafer carrying is used all can reuse, and greatly provides cost savings, and reaches the object that is better than original simple aluminum heating plate technological effect.

Accompanying drawing explanation

Fig. 1 is structural representation of the present utility model.

Fig. 2 is the vertical view of Fig. 1.

Fig. 3 is the cutaway view of Fig. 1.

Fig. 4 is that the utility model is used view.

Fig. 5 is another embodiment of the present utility model.

Embodiment

Embodiment mono-

With reference to Fig. 1-4, a kind of novel wafer bearing device is to inlay the ring 1 of an inner side with concave station rank 10 at heating plate 2 peripheries, and the concave station rank 10 of ring 1 are higher than the upper surface of heating plate.A ball 8 is placed in center at the upper surface 6 of heating plate 2.When high temperature, if wafer 15 can be held by ball 8 after deforming, and can directly not contact with the upper surface of heating plate 26.

Ring 1 is embedded in the outer rim of heating plate 2, and it is by lower surface 12 and heating plate groove table top 5 contact-making surfaces.The upper surface 9 of ring 1 is provided with concave station rank 11 in the inner part.These concave station rank 11 are a little more than the upper surface 6 of heating plate 2.Even if placed ball 8 on heating plate 2, its total height can not exceed the concave station rank 11 of ring 1 yet, and the peak 7 of ball 8 is all the time lower than the concave station rank 11 of encircling.Thereby guarantee that the wafer 16 of placing drops on ring 1 completely, can not have any direct contact with heating plate 2.Meanwhile, the upper surface 17 of wafer 16 in groove, can not exceed the upper surface 9 of ring all the time.The diameter 3 that encircles 1 concave station rank 11 is slightly larger than the diameter of wafer 16 15, and the degree of depth is slightly larger than the thickness of wafer 16.Because considering thermal expansion, therefore the minimum diameter place 4 of ring 1 is less than brilliant diameter of a circle 15, but slightly larger than the boss of heating plate 2 10 diameters.Guarantee when mounted, can and the boss 10 of heating plate 2 between keep certain gap., guarantee under technological temperature, the two is in concentric meanwhile, and between do not have contact.During use, ring 1 is concentric installation with heating plate 2, inlays the edge that calorifies dish 2.Ring 1 maximum outside diameter 13 is larger than the external diameter of heating plate 2 14, being heated to 400 while spending, still can cover heating plate 2 comprehensively, can avoid the edge exposure of heating plate 2, to protect heating plate 2.No matter, in normal temperature state or the condition of high temperature, wafer 16 outer rims belows are pottery or the surface of processing all the time, there is no exposed aluminium, thereby have avoided sparking (Arcing) appearance.Because the edge of wafer periphery and ring is one week contact-making surface, the contact area of the two is not too large, and one-side contact face is within 2mm.So when process gas enters, do not have gas and enter into wafer rear 18, just can not produce rainbow film or deposition Particle(granularity yet on wafer rear 18).

In a word, this utility model patent is simple in structure, is easy to processing, installs and operation, and each can reuse simultaneously, greatly reduces cost and input.Meanwhile, in whole technical process, the bearing function to wafer can well be realized, the validity of technique can be well guaranteed again.

Embodiment bis-

With reference to Fig. 5, the upper surface 6 that is only heating plate 2 with the difference in embodiment mono-is along placing multiple uniform balls 8 on same circumference, and remaining structure is identical.

Claims

1. A new type of wafer carrying device, comprising an aluminum heating plate, characterized in that: a ring is inlaid on the outer edge of the aluminum heating plate, a groove is arranged inside the ring, and the edge of the groove of the ring is aligned with the outer edge of the wafer. The lower surface of the outer circumference is in direct contact, so as to support the wafer. A ball is installed at the center of the heating plate, or a plurality of evenly distributed balls are installed on the same circumference of the plate.

2. The novel wafer carrying device according to claim 1, wherein the ring is made of aluminum or ceramics; the ball is made of sapphire, aluminum or ceramics.

3. The novel wafer carrier device according to claim 1, characterized in that: the contact surface between the ring and the heating plate is flat, and a concave step is provided on the inner side of the upper surface of the ring, and the concave step is slightly higher than the heating plate. The boss of the disc; the maximum height of the ball is always below the concave step surface of the ring.

4. The novel wafer carrying device as claimed in claim 2, wherein the ring is made of aluminum, and the surface of the ring is hard anodized.

5. The novel wafer carrier device according to claim 2, characterized in that: the surface of the ball is coated with a layer of ceramics, or the surface is fluorinated to form a layer of aluminum fluoride.