CN203456467U

CN203456467U - Barrier layer, thin film transistor, and array substrate

Info

Publication number: CN203456467U
Application number: CN201320547456.0U
Authority: CN
Inventors: 刘翔
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2013-09-04
Filing date: 2013-09-04
Publication date: 2014-02-26
Anticipated expiration: 2023-09-04

Abstract

The utility model provides a barrier layer, a thin film transistor, and an array substrate, and relates to the technical field of display. When the barrier layer is used for the thin film transistor, diffusion of Cu atoms to other layers is stopped, thereby reducing damage of performance of the thin film transistor. The barrier layer comprises at least two layers of conductive films, wherein crystal boundary in any conductive film and crystal boundary in the conductive film in the other contacted layer are arranged in a dislocation manner.

Description

A kind of barrier layer, thin-film transistor and array base palte

Technical field

The utility model relates to Display Technique field, relates in particular to a kind of barrier layer, thin-film transistor and array base palte.

Background technology

In recent years, large scale, high-resolution LCD TV become Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display gradually, TFT-LCD) a main flow trend of development, this just need to adopt the drive circuit of higher frequency to improve display quality, makes the delay phenomenon of picture signal in TFT-LCD become even more serious.The delay of TFT-LCD signal is mainly decided by T=RC, and wherein, T is signal transmission rate, and R is signal resistance, and C is relevant capacitor.

At present, generally adopt the metals such as the tantalum that chemical property is relatively stable, resistivity is relatively high (Ta), chromium (Cr), molybdenum (Mo) or its alloy as the material of metal electrode.Raising along with TFT-LCD size, gated sweep line length is also along with increase, also increase signal delay time thereupon, signal delay is increased to certain degree, some pixels can not get sufficient charging, cause brightness irregularities, the contrast of TFT-LCD is declined, seriously affected the display quality of image.

For this reason, usining at present low-resistance metallic copper (Cu) can address this problem as the source-drain electrode of thin-film transistor.Yet, because Cu atom is under the effect of high temperature or extra electric field, very easily in semiconductor active layer, gate insulation layer and passivation layer, spread, the performance degradation of device was even lost efficacy, therefore, generally before deposition Cu metallic film, need first to deposit one deck barrier layer (Buffer Layer).

For barrier layer, should there is the characteristics such as good thermal stability, conductivity.Therefore, barrier material is generally selected metal simple-substance that high-melting-point, conductivity are good or their alloy, as alloy of molybdenum (Mo), titanium (Ti), Mo-Ti alloy, Ti etc.

From structure, best barrier layer should be monocrystal material, yet due to monocrystalline material growth difficulty, cost is higher, is difficult to use in use of large-scale production.The film that the alloy of metal or metal forms is conventionally polycrystal film, has the grain boundary defects of some in film, often becomes the passage of Cu atom diffusion, even the Cu atom of trace also can impact the device performance of thin-film transistor.

The metal simple-substance Mo of take below describes as example as barrier layer, as shown in Figure 1, in barrier layer 40, crystal grain longitudinal growth forms crystal boundary 70, in the source of metal Cu, leak between metal level 50 and semiconductor active layer 30 and formed diffusion admittance, when Cu atom 60 heated or extra electric field do the used time, part Cu atom 60 just can pass crystal boundary, be diffused in semiconductor layer active layer 30, affected the performance of thin-film transistor.

Utility model content

Embodiment of the present utility model provides a kind of barrier layer, thin-film transistor and array base palte, can stop the diffusion of Cu atom.

For achieving the above object, embodiment of the present utility model adopts following technical scheme:

On the one hand, the utility model embodiment provides ，Gai barrier layer, a kind of barrier layer to comprise at least two-layer conductive film; Wherein, the crystal boundary in the described conductive film of arbitrary layer and the mutual Heterogeneous Permutation of crystal boundary in another layer that contacts described conductive film.

Preferably, described at least two-layer conductive film at least comprises ground floor conductive film and second layer conductive film; Described ground floor conductive film and described second layer conductive film include the metal simple-substance of high thermal stability and low-resistivity.

Further preferred, described at least two-layer conductive film at least comprises ground floor conductive film and second layer conductive film; Described ground floor conductive film comprises the metal simple-substance of high thermal stability and low-resistivity;

Described second layer conductive film comprises compound or the alloy that the metal simple-substance by described high thermal stability and low-resistivity forms; Wherein, described compound comprises oxide or nitride or the oxynitrides that the metal simple-substance by described high thermal stability and low-resistivity forms.

Optionally, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.

Preferably, the thickness of described layer of conductive film is

On the other hand, the utility model embodiment also provides ，Gai barrier layer, a kind of barrier layer to comprise at least one blocking unit, and any blocking unit includes on one deck conductive film under conductive film and one deck; Wherein said upper conductive film comprises without crystal boundary conductive film.

Optionally, described lower conductive film comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity.

Further alternative, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.

Preferably, the thickness of described any blocking unit is

Again on the one hand, the utility model embodiment also provides ，Gai barrier layer, a kind of barrier layer to comprise that one deck has the 3rd conductive film of crystal boundary, also comprises crystal boundary obstacle, for filling up the crystal boundary of described the 3rd conductive film at the grain boundaries of described the 3rd conductive film.

Optionally, described the 3rd conductive film comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity;

Described crystal boundary obstacle comprises oxide or nitride or the oxynitrides that the metal simple-substance by described high thermal stability and low-resistivity forms.

Preferably, the thickness of described the 3rd conductive film is

Another aspect, the utility model embodiment also provides a kind of thin-film transistor, comprises gate electrode, gate insulation layer, semiconductor active layer, source leakage metal level, also comprises any above-mentioned barrier layer.

On the one hand, the utility model embodiment also provides a kind of array base palte, comprises substrate and is arranged on the above-mentioned thin-film transistor on substrate again.

On the other hand, the utility model embodiment provides a kind of preparation method of barrier layer, and the method comprises: on underlay substrate, form at least two-layer conductive film; Wherein, the crystal boundary in the described conductive film of arbitrary layer and the mutual Heterogeneous Permutation of crystal boundary in another layer that contacts described conductive film.

Optionally, on described underlay substrate, at least form ground floor conductive film and the second layer conductive film of the metal simple-substance that includes high thermal stability and low-resistivity.

Optionally, on described underlay substrate, at least form the ground floor conductive film of the metal simple-substance comprise high thermal stability and low-resistivity and comprise compound that the metal simple-substance by described high thermal stability and low-resistivity forms or the second layer conductive film of alloy.

Further preferred, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.

Preferably, the thickness of described layer of conductive film is

Another aspect, the utility model embodiment provides a kind of preparation method of barrier layer, and the method comprises: on underlay substrate, form at least one blocking unit, any blocking unit includes on one deck conductive film under conductive film and one deck; Wherein, described upper conductive film comprises without crystal boundary conductive film.

Optionally, form conductive film under one deck on underlay substrate, described lower conductive film comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity;

On the surface of the relatively described underlay substrate of described lower conductive film, pass into the mist of oxygen or nitrogen or oxygen and nitrogen, form conductive film on one deck, described upper conductive film is without crystal boundary conductive film.

Preferably, the thickness of described any blocking unit is

Again on the one hand, the utility model embodiment provides a kind of preparation method of barrier layer, the method comprises: on underlay substrate, form the 3rd conductive film that one deck has crystal boundary, and forming the crystal boundary obstacle of the grain boundaries be positioned at described the 3rd conductive film, described crystal boundary obstacle is for filling up the crystal boundary of described the 3rd conductive film.

Optionally, form the 3rd conductive film that one deck has crystal boundary on underlay substrate, described the 3rd conductive film comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity;

On the surface of the relatively described underlay substrate of described the 3rd conductive film, pass into the mist of oxygen or nitrogen or oxygen and nitrogen, formation is positioned at the crystal boundary obstacle of the grain boundaries of described the 3rd conductive film, and described crystal boundary obstacle is for filling up the crystal boundary of described the 3rd conductive film; Wherein, described crystal boundary obstacle comprises oxide or nitride or the oxynitrides that the metal simple-substance by described high thermal stability and low-resistivity forms.

Preferably, the thickness of described the 3rd conductive film is

The utility model embodiment provides a kind of barrier layer, thin-film transistor and array base palte, when above-mentioned barrier layer is during for the thin-film transistor of the metal electrode made by Cu, can stop that Cu atom is to the diffusion of other layers, thereby reduce the infringement to thin-film transistor performance.

Accompanying drawing explanation

In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.

The structural representation on a kind of barrier layer that Fig. 1 provides for prior art;

The structural representation one on a kind of barrier layer that Fig. 2 provides for the utility model embodiment;

The structural representation two on a kind of barrier layer that Fig. 3 provides for the utility model embodiment;

The structural representation three on a kind of barrier layer that Fig. 4 provides for the utility model embodiment;

The structural representation of a kind of thin-film transistor that Fig. 5 provides for the utility model embodiment;

The structural representation one of a kind of array base palte that Fig. 6 provides for the utility model embodiment;

The structural representation two of a kind of array base palte that Fig. 7 provides for the utility model embodiment.

Accompanying drawing explanation:

10-gate electrode; 20-gate insulation layer; 30-semiconductor active layer; 40-barrier layer; 401-ground floor conductive film; 402-second layer conductive film; 403-blocking unit; The upper conductive film of 4031-; Conductive film under 4032-; 404-the 3rd conductive film; Metal level is leaked in 50-source; 501-source electrode; 502-drain electrode; 60-Cu atom; 70-crystal boundary; 80-crystal boundary filler; 90-pixel electrode; 100-passivation layer; 110-public electrode.

Embodiment

Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Embodiment based in the utility model, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.

The utility model embodiment provides a kind of barrier layer 40, as shown in Figure 2, comprises at least two-layer conductive film; Wherein, the crystal boundary 70 in the described conductive film of arbitrary layer is arranged with crystal boundary 70 mutual dislocation in another layer that contacts described conductive film.

It should be noted that, first, due at present in field of display, using Cu is in order to solve the problem of signal delay as metal electrode, therefore, the described barrier application providing as the utility model embodiment, when comprising the display of thin-film transistor, needs still can solve the problem of signal delay, therefore, the material of low-resistivity need be selected in described barrier layer.In addition, owing to preparing metal electrode with Cu, its work flow temperature is higher can reach 200～450 ℃, and therefore, barrier material also must have good thermal stability.

The second, the number of plies of the conductive film described barrier layer 40 specifically not being comprised in the utility model embodiment limits, and according to actual conditions, sets.

A kind of barrier layer that the utility model embodiment provides, because the crystal boundary 70 in it described conductive film of arbitrary layer comprising is arranged with crystal boundary 70 mutual dislocation in another layer that contacts described conductive film, on the contact-making surface of the two-layer conductive film contacting arbitrarily, can form the staggered floor construction of crystal boundary, thereby when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, can stop the diffusion of Cu atom, for example can stop that Cu atom is to semiconductor active layer 30 diffusions, and then reduce the infringement to film transistor device performance.

Optionally, described at least two-layer conductive film comprises two-layer conductive film, and described two-layer conductive film comprises ground floor conductive film 401 and second layer conductive film 402.Like this, on the one hand, by this two-layer conductive film, can stop the diffusion of Cu atom, on the other hand, can reduce technique number of times, save cost.

Here, " ground floor " and " second layer " is only for the description to described conductive film title, on relative position, described ground floor conductive film 401 and described second layer conductive film 402 are not limited, that is: described ground floor conductive film 401 can be arranged on described second layer conductive film 402, also can be arranged under described second layer conductive film 402.

Further, while considering the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, the thickness of the resistivity on this barrier layer 40, transparency, thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore, preferably, the thickness of described layer of conductive film is

Here, consider that to form the thickness on barrier layer too thick, resistivity can become greatly, so in the utility model embodiment, and preferably, while comprising the conductive film more than two-layer on described barrier layer 40, its thickness is no more than

On this basis, optional, described ground floor conductive film 401 and described second layer conductive film 402 include the metal simple-substance of high thermal stability and low-resistivity.

Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum (Mo) or titanium (Ti) or tungsten (W) or tantalum (Ta) or zirconium (Zr) or cobalt (Co) or hafnium (Hf) etc.

It should be noted that, herein, the described high thermal stability and the low resistivity metal simple substance that form described ground floor conductive film 401 and the described second layer conductive film 402 of formation can be above-mentioned same metal simple-substances, can be also above-mentioned metal simple-substances not of the same race.

Pass through said structure, can obtain by two-layer and there is the barrier layer 40 that conductive film that different crystal boundaries 70 arrange forms, on the contact-making surface of described two-layer conductive film, can form the staggered floor construction of crystal boundary 70, when above-mentioned barrier layer 40 is during for the thin-film transistor of the metal electrode made by Cu, just can stop the diffusion of Cu atom 60, thereby reduce the infringement to thin-film transistor performance.In addition, because described metal simple-substance molybdenum, titanium, tungsten, tantalum, zirconium, cobalt, hafnium all have lower resistivity, when it is applied to thin-film transistor, yet can there is not considerable influence and cause using the display of this thin-film transistor to occur the problem of signal delay the resistance of the metal electrode of Cu material.

Or optional, described ground floor conductive film 401 comprises the metal simple-substance of high thermal stability and low-resistivity; Described second layer conductive film 402 comprises compound or the alloy that the metal simple-substance by described high thermal stability and low-resistivity forms.

Wherein, the described compound consisting of described high thermal stability and low resistivity metal simple substance, comprises oxide, nitride, oxynitrides.

The metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.On this basis, the described compound consisting of described high thermal stability and low resistivity metal simple substance is such as thinking molybdenum oxide, molybdenum nitride, nitrogen molybdenum oxide, tungsten oxide, hafnium oxide, tantalum nitride, zirconium nitride etc.

Because described metal simple-substance molybdenum, titanium, tungsten, tantalum, zirconium, cobalt, hafnium all have lower resistivity, although the compound consisting of it or alloy resistivity are higher, but while forming barrier layer by described metal simple-substance and the compound being formed by this metal simple-substance or alloy simultaneously, when the thin-film transistor of its metal electrode that is applied to be made by Cu, yet can there is not considerable influence and cause using the display of this thin-film transistor to occur the problem of signal delay the resistance of the metal electrode of Cu material.

Provide 3 specific embodiments below, to describe above-mentioned barrier layer in detail.

Embodiment mono-, and the utility model embodiment provides a kind of barrier layer 40, as shown in Figure 2, comprises the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is

the thickness of described second layer conductive film is described ground floor conductive film 401 is the conductive film of molybdenum simple substance, the serve as reasons conductive film of the molybdenum oxide that described molybdenum simple substance forms of described second layer conductive film 402, and crystal boundary 70 mutual dislocation of the molybdenum oxide in the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and described second layer conductive film 402 are arranged.

Here, the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the molybdenum oxide in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method or thermal evaporation deposit thickness on substrate to be about

metal molybdenum simple substance as ground floor conductive film 401; The described ground floor conductive film 401 of take is substrate, when splash-proofing sputtering metal molybdenum, passes into the oxygen of condition of plasma, thereby correspondingly obtain thickness on described ground floor conductive film 401, is about

molybdenum oxide conductive film as second layer conductive film 402.

Because described molybdenum oxide is different with the direction of growth of described metal simple-substance molybdenum, therefore, at the contact interface place of described ground floor conductive film 401 and described second layer conductive film 402, crystal boundary 70 forms staggered floor construction.

It should be noted that, the thin-film transistor of the metal electrode that is applied to be made by Cu when described barrier layer 40, and described barrier layer 40 is arranged at when for example the source of semiconductor active layer and Cu material is leaked between metal level, consider that described semiconductor active layer is that metal-oxide semiconductor (MOS) is as the indium gallium zinc oxide of amorphous (Indium Gallium Zinc Oxide, IGZO) during active layer, some above-mentioned metal simple-substance for example Mo can react with described IGZO, in the interface contacting, generates molybdenum oxide and causes the performance of thin-film transistor to worsen.

Therefore, in order to address this problem and to keep stopping the diffusion of Cu atom, the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the molybdenum oxide in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method or thermal evaporation, the described metal-oxide semiconductor (MOS) active layer of take is substrate, when splash-proofing sputtering metal molybdenum, pass into the oxygen of condition of plasma, thereby obtain thickness on described metal-oxide semiconductor (MOS) active layer, be about

molybdenum oxide conductive film as second layer conductive film 402, then take second layer conductive film 402 as substrate, deposit thickness is about

metal molybdenum simple substance as ground floor conductive film 401.

Embodiment bis-, and the utility model embodiment provides a kind of barrier layer 40, as shown in Figure 2, comprise the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is

the thickness of described second layer conductive film is

described ground floor conductive film 401 and described second layer conductive film 402 are the conductive film of tantalum simple substance, and the crystal boundary 70 of the tantalum simple substance in described ground floor conductive film 401 and the 70 mutual dislocation arrangements of the crystal boundary of the tantalum simple substance in described second layer conductive film 402.

Here, the crystal boundary 70 of the tantalum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the tantalum simple substance in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method or thermal evaporation deposit thickness on substrate to be about

metal tantalum simple substance as ground floor conductive film 401; The described ground floor conductive film 401 of take is substrate, when splash-proofing sputtering metal tantalum, by changing the process conditions such as sputtering power, rate of film build, obtains thickness and be about on described ground floor conductive film 401 the second layer conductive film 402 of another layer of metal tantalum simple substance.

Because the ground floor conductive film 401 of described metal tantalum simple substance is different with the membrance casting condition of second layer conductive film 402, correspondingly, in the ground floor conductive film 401 and second layer conductive film of described metal simple-substance, the direction of growth of tantalum is also different, in the interface of its contact, crystal boundary forms staggered floor construction.

Embodiment tri-, and the utility model embodiment provides a kind of barrier layer 40, as shown in Figure 2, comprise the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is

the thickness of described second layer conductive film is

described ground floor conductive film 401 is the conductive film of molybdenum simple substance, the conductive film that described second layer conductive film 402 is molybdenum-titanium alloy of consisting of metal molybdenum, and crystal boundary 70 mutual dislocation of the molybdenum-titanium alloy in the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and described second layer conductive film 402 are arranged.

Here, the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the molybdenum-titanium alloy in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method deposit thickness on substrate to be about

metal molybdenum simple substance as ground floor conductive film 401; The described ground floor conductive film 401 of take is substrate, then sputter molybdenum-titanium alloy, obtains thickness and be about on described ground floor conductive film 401 the second layer conductive film 402 of another layer of molybdenum-titanium alloy.

Because the crystal growth direction of the ground floor conductive film 401 of described metal molybdenum simple substance and the second layer conductive film 402 of described metal molybdenum-titanium alloy is different, at the contact interface place of described ground floor conductive film 401 and described second layer conductive film 402, crystal boundary forms staggered floor construction.

The utility model embodiment also provides another kind of barrier layer 40, as shown in Figure 3, comprises at least one blocking unit 403, and any blocking unit 403 includes on one deck conductive film 4032 under conductive film 4031 and one deck; Wherein, described upper conductive film 4031 comprises without crystal boundary conductive film.

It should be noted that, first, due at present in field of display, using Cu is in order to solve the problem of signal delay as metal electrode, the described barrier application providing as the utility model embodiment is when comprising the display of thin-film transistor, need still can solve the problem of signal delay, therefore, the material of low-resistivity need be selected in described barrier layer; In addition, owing to preparing metal electrode with Cu, its work flow temperature is higher can reach 200～450 ℃, and therefore, barrier material also must have good thermal stability.

The second, the number of the blocking unit described barrier layer 40 specifically not being comprised in the utility model embodiment limits, and according to actual conditions, sets.

A kind of barrier layer that the utility model embodiment provides, because described upper conductive film 4031 is without crystal boundary conductive film, can cover the crystal boundary passage of described lower conductive film 4032, when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, can stop the diffusion of Cu atom 60, for example can stop that Cu atom is to semiconductor active layer 30 diffusions, and reduce the infringement to film transistor device performance.

Further, while considering the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, the thickness of the resistance on this barrier layer 40, transparency, thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore, preferably, the thickness of described any blocking unit is

Optionally, described lower conductive film 4032 comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity.

Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.On this basis, the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity can be for example molybdenum-titanium alloy, molybdenum-tungsten alloy etc.

Because described upper conductive film 4031 is without crystal boundary conductive film, can cover the crystal boundary passage of described lower conductive film 4032, when above-mentioned barrier layer 40 is during for the thin-film transistor of the metal electrode made by Cu, just can stop the diffusion of Cu atom 60, thereby reduce the infringement to thin-film transistor performance.In addition, because described metal simple-substance molybdenum, titanium, tungsten, tantalum, zirconium, cobalt, hafnium all have lower resistivity, when it is applied to thin-film transistor, yet can there is not considerable influence and cause using the display of this thin-film transistor to occur the problem of signal delay the resistance of the metal electrode of Cu material.

Provide a specific embodiment below, to describe above-mentioned barrier layer in detail.

Embodiment tetra-, and a kind of barrier layer 40 is provided, and as shown in Figure 3, comprise a blocking unit 403; The thickness of described blocking unit 403 is 30～300; Wherein, described blocking unit 403 comprises without the upper conductive film 4031 of crystal boundary and the lower conductive film 4032 of metal simple-substance zirconium.

Here, described blocking unit 403 can for example be realized by the following method, that is: adopt sputtering method on substrate plated metal zirconium simple substance as lower conductive film 4032; Under metal simple-substance zirconium, conductive film 4032 surfaces pass into the nitrogen of condition of plasma, and the zirconium atom on described lower conductive film 4031 surfaces reacts with the nitrogen of described condition of plasma, generate one deck without the upper conductive film 4031 of crystal boundary.

It is pointed out that said process can repeatedly repeat, finally obtain comprising the barrier layer 40 of a plurality of blocking units 403.When the barrier layer 40 that comprises a plurality of blocking units 403 is during for the thin-film transistor of the metal electrode made by Cu, consider resistance, the transparency on this barrier layer 40, the thickness of thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore, in order to guarantee transparency and the low-resistivity on

barrier layer

40,40 thickness of the barrier layer with a plurality of blocking units 403 that finally obtain should be less than or equal to

Because upper conductive film 4031 is without crystal boundary conductive film, can cover lower conductive film 4032 and by lower conductive film with comprise that the electrode isolation of Cu material opens, thereby stop the diffusion of Cu atom 60.

The utility model embodiment also provides another kind of barrier layer 40, as shown in Figure 4, this barrier layer 40 comprises that one deck has the 3rd conductive film 404 of crystal boundary, crystal boundary 70 places at described the 3rd conductive film 404 also comprise crystal boundary obstacle 80, and described crystal boundary obstacle 80 is for filling up the crystal boundary of described the 3rd conductive film.

It should be noted that, due at present in field of display, using Cu is in order to solve the problem of signal delay as metal electrode, the described barrier application providing as the utility model embodiment is when comprising the display of thin-film transistor, need still can solve the problem of signal delay, therefore, the material of low-resistivity need be selected in described barrier layer; In addition, owing to preparing metal electrode with Cu, its work flow temperature is higher can reach 200～450 ℃, and therefore, barrier material also must have good thermal stability.

A kind of barrier layer that the utility model embodiment provides, by crystal boundary 70 places at described the 3rd conductive film, described crystal boundary obstacle 80 is set, filled up the crystal boundary 70 of described the 3rd conductive film 404, thereby when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, just can stop the diffusion of Cu atom 60, for example can stop that Cu atom 60 is to the diffusion of semiconductor active layer 30, and then reduce the infringement to film transistor device performance.

Further, while considering the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, the thickness of the resistance on this barrier layer 40, transparency, thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore, preferably, the thickness of described the 3rd conductive film 404 is

Optionally, described the 3rd conductive film 404 comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity; Described crystal boundary obstacle comprises oxide or nitride or the oxynitrides that the metal simple-substance by described high thermal stability and low-resistivity forms.

Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium etc.On this basis, the oxide or nitride or the oxynitrides that the metal simple-substance of described high thermal stability and low-resistivity, consist of, such as thinking molybdenum oxide, molybdenum nitride, nitrogen molybdenum oxide, tungsten oxide, hafnium oxide, tantalum nitride, zirconium nitride etc.

Because described metal simple-substance molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium all have lower resistivity, when it is applied to thin-film transistor, yet can there is not considerable influence and cause using the display of this thin-film transistor to occur the problem of signal delay the resistance of the metal electrode of Cu material.

Embodiment five, and a kind of barrier layer 40 is provided, and as shown in Figure 4, this barrier layer 40 comprises the 3rd conductive film 404 of layer of metal simple substance hafnium, and described the 3rd conductive film 404 thickness are

crystal boundary 70 places at described the 3rd conductive film 404 also comprise crystal boundary obstacle 80, described crystal boundary obstacle 80 is the oxynitrides of described metal simple-substance hafnium, be nitrogen hafnium oxide, for filling up the crystal boundary 70 of the 3rd conductive film 404 being formed by described metal simple-substance hafnium.

Here, crystal boundary 70 places of the 3rd conductive film 404 of described metal simple-substance hafnium comprise that crystal boundary obstacle 80 for example can realize by the following method, that is: adopt sputtering method thermal evaporation on substrate plated metal hafnium simple substance as the 3rd conductive film 404, the 3rd conductive film 404 surfaces at metal simple-substance hafnium pass into the nitrogen of condition of plasma and the mist of oxygen, the hafnium atom on described the 3rd conductive film 404 surfaces and the nitrogen of described condition of plasma and the mixed gas reaction of oxygen, generate the crystal boundary obstacle 80 of nitrogen hafnium oxide, the crystal boundary obstacle 80 of nitrogen hafnium oxide is under the high speed nitrogen of condition of plasma and the drive of the mist of oxygen, can move to crystal boundary 70 places on the 3rd conductive film 404 surfaces, clogging crystal boundary 70, like this when barrier layer 40 is during for the thin-film transistor of the metal electrode made by Cu, just can stop that Cu atom 60 is for example to the diffusion of semiconductor active layer 30, thereby reduced the infringement to thin-film transistor performance.

The utility model embodiment also provides a kind of thin-film transistor, as shown in Figure 5, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50, also comprises any above-mentioned barrier layer 40.

Wherein, as shown in Figure 5, when leak in the situation that the material of metal level 50 is Cu in described source, described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

Certainly, when the material of described gate electrode 10 is also in the situation of Cu, described barrier layer 40 is also arranged between described gate electrode 10 and described gate insulation layer 20.

For described barrier layer 40, optional, shown in figure 2, described barrier layer 40 can comprise at least two-layer conductive film; Wherein, the crystal boundary 70 in the described conductive film of arbitrary layer is arranged with crystal boundary 70 mutual dislocation in another layer that contacts described conductive film.

A kind of thin-film transistor that the utility model embodiment provides, crystal boundary 70 in the described conductive film of arbitrary layer comprising due to barrier layer 40 wherein and the crystal boundary 70 mutual dislocation arrangements in another layer that contacts described conductive film, on the contact-making surface of the two-layer conductive film contacting arbitrarily, can form the staggered floor construction of crystal boundary, thereby when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, can stop the diffusion of Cu atom, for example can stop that Cu atom is to semiconductor active layer 30 diffusions, and then reduce the infringement to film transistor device performance.

Further alternative, described at least two-layer conductive film comprises two-layer conductive film, and described two-layer conductive film comprises ground floor conductive film 401 and second layer conductive film 402.Like this, on the one hand, by this two-layer conductive film, can stop the diffusion of Cu atom, on the other hand, can reduce technique number of times, save cost.

Provide three concrete examples below, to describe above-mentioned thin-film transistor and barrier layer 40 in detail.

Example 1, shown in figure 5, this example provides a kind of thin-film transistor, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50; Wherein, the material that metal level 50 is leaked in described source is Cu, and described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

Wherein, described barrier layer 40, shown in figure 2, comprises the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is

the thickness of described second layer conductive film is

described ground floor conductive film 401 is the conductive film of molybdenum simple substance, the serve as reasons conductive film of the molybdenum oxide that described molybdenum simple substance forms of described second layer conductive film 402, and crystal boundary 70 mutual dislocation of the molybdenum oxide in the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and described second layer conductive film 402 are arranged.

molybdenum oxide conductive film as second layer conductive film 402.

It should be noted that, the thin-film transistor of metal electrode is leaked in the source that is applied to be made by Cu when described barrier layer 40, consider that described semiconductor active layer is that metal-oxide semiconductor (MOS) is as the indium gallium zinc oxide of amorphous (Indium Gallium Zinc Oxide, be called for short IGZO) during active layer, some above-mentioned metal simple-substance for example Mo can react with described IGZO, in the interface contacting, generates molybdenum oxide and causes the performance of thin-film transistor to worsen.

Therefore, in order to address this problem and to keep stopping the diffusion of Cu atom, the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the molybdenum oxide in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method or thermal evaporation, the described metal-oxide semiconductor (MOS) active layer of take is substrate, when splash-proofing sputtering metal molybdenum, pass into the oxygen of condition of plasma, thereby obtain thickness on described metal-oxide semiconductor (MOS) active layer, be about molybdenum oxide conductive film as second layer conductive film 402, then take second layer conductive film 402 as substrate, deposit thickness is about

metal molybdenum simple substance as ground floor conductive film 401.

Example 2, shown in figure 5, this example provides a kind of thin-film transistor, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50; Wherein, the material that metal level 50 is leaked in described source is Cu, and described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

the thickness of described second layer conductive film is

Here, the crystal boundary 70 of the tantalum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the tantalum simple substance in described second layer conductive film 402 are arranged and can for example be realized by the following method, that is: adopt sputtering method or thermal evaporation deposit thickness on substrate to be about metal tantalum simple substance as ground floor conductive film 401; The described ground floor conductive film 401 of take is substrate, when splash-proofing sputtering metal tantalum, by changing the process conditions such as sputtering power, rate of film build, obtains thickness and be about on described ground floor conductive film 401

the second layer conductive film 402 of another layer of metal tantalum simple substance.

Example 3, shown in figure 5, this example provides a kind of thin-film transistor, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50; Wherein, the material that metal level 50 is leaked in described source is Cu, and described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

Wherein, described barrier layer 40, shown in figure 2, comprises the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is the thickness of described second layer conductive film is

metal molybdenum simple substance as ground floor conductive film 401; The described ground floor conductive film 401 of take is substrate, then sputter molybdenum-titanium alloy, obtains thickness and be about on described ground floor conductive film 401

the second layer conductive film 402 of another layer of molybdenum-titanium alloy.

For described barrier layer 40, optional, as shown in Figure 3, comprise at least one blocking unit 403, any blocking unit 403 includes on one deck conductive film 4032 under conductive film 4031 and one deck; Wherein, described upper conductive film 4031 comprises without crystal boundary conductive film.

A kind of thin-film transistor that the utility model embodiment provides, the upper conductive film 4031 comprising due to barrier layer 40 is wherein for without crystal boundary conductive film, can cover the crystal boundary passage of described lower conductive film 4032, when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, can stop the diffusion of Cu atom 60, and reduce the infringement to film transistor device performance.

Provide a concrete example below, to describe above-mentioned thin-film transistor and barrier layer 40 in detail.

Example 4, shown in figure 5, this example provides a kind of thin-film transistor, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50; Wherein, the material that metal level 50 is leaked in described source is Cu, and described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

Wherein, described barrier layer 40, shown in figure 3, comprises a blocking unit 403; The thickness of described blocking unit 403 is

wherein, described blocking unit 403 comprises without the upper conductive film 4031 of crystal boundary and the lower conductive film 4032 of metal simple-substance zirconium.

barrier layer

For described barrier layer 40, optionally, shown in figure 4, this barrier layer 40 comprises that one deck has the 3rd conductive film 404 of crystal boundary, crystal boundary 70 places at described the 3rd conductive film 404 also comprise crystal boundary obstacle 80, and described crystal boundary obstacle 80 is for filling up the crystal boundary of described the 3rd conductive film.

A kind of thin-film transistor that the utility model embodiment provides, because barrier layer 40 wherein comprises that one deck has the 3rd conductive film 404 of crystal boundary, crystal boundary 70 places at described the 3rd conductive film 404 also comprise crystal boundary obstacle 80, by crystal boundary 70 places at described the 3rd conductive film, described crystal boundary obstacle 80 is set like this, filled up the crystal boundary 70 of described the 3rd conductive film 404, thereby when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, just can stop the diffusion of Cu atom 60, for example can stop that Cu atom 60 is to the diffusion of semiconductor active layer 30, and then reduce the infringement to film transistor device performance.

Example 5, shown in figure 5, this example provides a kind of thin-film transistor, comprises gate electrode 10, gate insulation layer 20, semiconductor active layer 30, source leakage metal level 50; Wherein, the material that metal level 50 is leaked in described source is Cu, and described barrier layer 40 is arranged on described source and leaks between metal level 50 and described semiconductor active layer 30.

Wherein, described barrier layer 40, shown in figure 4, this barrier layer 40 comprises the 3rd conductive film 404 of layer of metal simple substance hafnium, described the 3rd conductive film 404 thickness are

It should be noted that, at present, the oxide semiconductor that the IGZO of take is representative, because it has the features such as electron mobility is high, homogeneity is good, has been widely used in Display Technique field, makes the semiconductor active layer in thin-film transistor; Yet the metal simple-substance of mentioning because some is above-mentioned for example Mo can react with described IGZO, in the interface contacting, generate molybdenum oxide and cause the performance of thin-film transistor to worsen, therefore, in the case, the part that described barrier layer 40 contacts with the semiconductor active layer of described IGZO should be the material not reacting with described IGZO.

It should be noted that, above-mentioned example all be take the thin-film transistor of bottom gate type and is described as example, but thin-film transistor of the present utility model is not as limit, for example, can be top gate type thin film transistor or two gate type thin film transistor.

In addition, the utility model embodiment also provides a kind of array base palte, comprises substrate, is arranged on the thin-film transistor on substrate; Wherein, described thin-film transistor is above-mentioned thin-film transistor; Certain described array base palte also comprises pixel electrode or pixel electrode and public electrode.

For above-mentioned barrier layer, the utility model embodiment also provides a kind of preparation method of barrier layer 40, and the method comprises: on underlay substrate, form at least two-layer conductive film; Wherein, the crystal boundary 70 in the described conductive film of arbitrary layer is arranged with crystal boundary 70 mutual dislocation in another layer that contacts described conductive film.

Due to different from the structure of another layer of described conductive film contacting in the described conductive film of arbitrary layer, make to form the grain growth direction difference of described conductive film, on the contact-making surface of described at least two-layer conductive film, can form the staggered floor construction of crystal boundary 70, when this barrier application is during in the thin-film transistor of the metal electrode of being made by Cu, can stop that Cu atom is for example to the diffusion of semiconductor active layer 30, and then reduce the infringement to film transistor device performance.

Optionally, on described underlay substrate, at least form two-layer conductive film, be respectively ground floor conductive film 401 and second layer conductive film 402, described ground floor conductive film 401 and second layer conductive film 402 include the metal simple-substance of high thermal stability and low-resistivity; Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.The embodiment bis-that its concrete preparation method can provide referring to the utility model repeats no more herein.

Or optional, on described underlay substrate, at least form two-layer conductive film, be respectively ground floor conductive film 401 and second layer conductive film 402, described ground floor conductive film 401 comprises the metal simple-substance of high thermal stability and low-resistivity, and described second layer conductive film 402 comprises compound that the metal simple-substance by described high thermal stability and low-resistivity forms or the second layer conductive film 402 of alloy.Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium; Described compound comprises the oxide that consists of above-mentioned metal simple-substance, nitride, oxynitrides etc.The embodiment tri-that the embodiment mono-that its concrete preparation method can provide referring to the utility model or the utility model provide repeats no more herein.

Further, while considering the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, the thickness of the resistance on this barrier layer 40, transparency, thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore, preferably, the thickness of described ground floor conductive film 401 is

the thickness of described second layer conductive film 402 is

The utility model embodiment provides a kind of preparation method of barrier layer 40, and the method comprises: on underlay substrate, form at least one blocking unit 403, any blocking unit includes on one deck conductive film 4032 under conductive film 4031 and one deck; Wherein, described upper conductive film 4031 comprises without crystal boundary conductive film.

Because described upper conductive film 4031 comprises described without crystal boundary conductive film, can cover lower conductive film 4032, during the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, can stop that Cu atom is for example to the diffusion of semiconductor active layer 30, and then reduce the infringement to film transistor device performance.

Optionally, described method specifically comprises: on underlay substrate, form conductive film 4032 under one deck, described lower conductive film 4032 comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity; Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium; Described alloy is such as comprising molybdenum-titanium alloy, molybdenum-tungsten alloy etc.

On the surface of the relatively described underlay substrate of described lower conductive film 4032, pass into the mist of oxygen or nitrogen or oxygen and nitrogen, form conductive film 4031 on one deck, described upper conductive film 4031 is without crystal boundary conductive film.

The embodiment tetra-that the concrete preparation method on a kind of barrier layer 40 that the utility model embodiment provides can provide referring to the utility model repeats no more herein.

In addition, the utility model embodiment also provides a kind of preparation method of barrier layer 40, the method comprises: on underlay substrate, form the 3rd conductive film 404 that one deck has crystal boundary, and forming the crystal boundary obstacle 80 at crystal boundary 70 places be positioned at described the 3rd conductive film 404, described crystal boundary obstacle 80 is for filling up the crystal boundary 70 of described the 3rd conductive film 404.

Thereby Cu atom and crystal boundary are cut off and opened, during the thin-film transistor of the metal electrode that is applied to be made by Cu when this barrier layer 40, can stop that Cu atom is for example to the diffusion of semiconductor active layer 30, and then reduce the infringement to film transistor device performance.

Optionally, described method specifically comprises: on underlay substrate, form the 3rd conductive film 404 that one deck has crystal boundary 70, described the 3rd conductive film 404 comprises the metal simple-substance of high thermal stability and low-resistivity or the alloy consisting of the metal simple-substance of described high thermal stability and low-resistivity; Wherein, the metal simple-substance of described high thermal stability and low-resistivity comprises molybdenum or titanium or tungsten or tantalum or zirconium or cobalt or hafnium.

On the surface of the relatively described underlay substrate of described the 3rd conductive film 404, pass into the mist of oxygen or nitrogen or oxygen and nitrogen, formation is positioned at the crystal boundary obstacle 80 at crystal boundary 70 places of described the 3rd conductive film 404, and described crystal boundary obstacle 80 is for filling up the crystal boundary 70 of described the 3rd conductive film 404; Wherein, described crystal boundary obstacle 80 comprises oxide or nitride or the oxynitrides that the metal simple-substance by described high thermal stability and low-resistivity forms.

The embodiment five that the concrete preparation method on a kind of barrier layer 40 that the utility model embodiment provides can provide referring to the utility model repeats no more herein.

For above-mentioned thin-film transistor, the utility model also provides a kind of preparation method of above-mentioned thin-film transistor, and described preparation method comprises the steps:

S101, at underlay substrate last layer molybdenum film, by a composition PROCESS FOR TREATMENT, on described substrate, form gate electrode 10.

Concrete, can use magnetically controlled sputter method, on underlay substrate, prepare a layer thickness and exist

molybdenum film.Then by mask board to explosure, development, etching, the composition PROCESS FOR TREATMENT such as peel off, at the certain area of described substrate, form described gate electrode 10, also form grid line, grid line lead-in wire etc. simultaneously.

S102, on the substrate of completing steps S101, form gate insulation layer 20.

Concrete, can utilize chemical vapour deposition technique to deposit a layer thickness on the substrate that is formed with described gate electrode 10 and be about gate insulation layer film, the material of described gate insulation layer film is silicon nitride normally, also can use silica and silicon oxynitride.

S103, on the substrate of completing steps S102, make semiconductor active layer film, by a composition PROCESS FOR TREATMENT, form semiconductor active layer 30.

Concrete, can utilize chemical vapor deposition method deposit thickness on substrate to be

metal oxide semiconductor films indium gallium zinc oxide (Indium Gallium Zinc Oxide for example, IGZO) film, then by mask board to explosure, development, etching, the composition PROCESS FOR TREATMENT such as peel off, at the certain area of described substrate, form the semiconductor active layer 30 being positioned at above described gate electrode 10.

S104, on the substrate of completing steps S103, make barrier film, by a composition PROCESS FOR TREATMENT, form the barrier layer 40 that is positioned at described semiconductor active layer 30 tops.

Wherein, make described barrier film and can comprise following three kinds of methods:

The first: shown in figure 2, comprise the ground floor conductive film 401 and the second layer conductive film 402 that are in contact with one another; Wherein, the thickness of described ground floor conductive film is

the thickness of described second layer conductive film is

described ground floor conductive film 401 is the conductive film of molybdenum simple substance, the serve as reasons conductive film of the molybdenum oxide that described molybdenum simple substance forms of described second layer conductive film 402, described second layer conductive film 402 forms by carrying out described semiconductor active layer 30, described ground floor conductive film 401 is formed on described second layer conductive film 402 tops, and the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and the 70 mutual dislocation arrangements of the crystal boundary of the molybdenum oxide in described second layer conductive film 402.

Here, the crystal boundary 70 of the molybdenum simple substance in described ground floor conductive film 401 and crystal boundary 70 mutual dislocation of the molybdenum oxide in described second layer conductive film 402 are arranged and can for example be realized by the following method, adopt sputtering method or thermal evaporation, the described metal-oxide semiconductor (MOS) active layer of take is substrate, when splash-proofing sputtering metal molybdenum, pass into the oxygen of condition of plasma, thereby obtain thickness on described metal-oxide semiconductor (MOS) active layer, be about

metal molybdenum simple substance as ground floor conductive film 401.

The second: shown in figure 3, comprise that one deck is without the upper conductive film 4031 of crystal boundary and the lower conductive film 4032 of layer of metal simple substance zirconium, and two layers of thickness is

Here, described barrier film can for example be realized by the following method, that is: adopt sputtering method on substrate plated metal zirconium simple substance as lower conductive film 4032; Under metal simple-substance zirconium, conductive film 4032 surfaces pass into the nitrogen of condition of plasma, and the zirconium atom on described lower conductive film 4031 surfaces reacts with the nitrogen of described condition of plasma, generate one deck without the upper conductive film 4031 of crystal boundary.

It is to be noted, said process can repeatedly repeat, finally obtain comprising a plurality of barrier films without the upper conductive film 4031 of crystal boundary and the lower conductive film of metal simple-substance zirconium 4032 formations, in the case, to this barrier film, after a composition PROCESS FOR TREATMENT, can obtain comprising the barrier layer 40 of a plurality of blocking units 403, each blocking unit 403 forms without the upper conductive film 4031 of crystal boundary and the lower conductive film of layer of metal simple substance zirconium 4032 by one deck.

In addition, consider resistance, the transparency on this barrier layer 40, the thickness of thin-film transistor integral body etc. can affect the performance of thin-film transistor, therefore,, in order to guarantee transparency and the low-resistivity on

barrier layer

The third: shown in figure 4, comprise the 3rd conductive film 404 of layer of metal simple substance hafnium, described the 3rd conductive film 404 thickness are crystal boundary 70 places at described the 3rd conductive film 404 also comprise crystal boundary obstacle 80, described crystal boundary obstacle 80 is the oxynitrides of described metal simple-substance hafnium, be nitrogen hafnium oxide, for filling up the crystal boundary 70 of the 3rd conductive film 404 being formed by described metal simple-substance hafnium.

S105, on the substrate of completing steps S104, make Cu metallic film, by a composition PROCESS FOR TREATMENT, form the source-drain electrode layer 50 that comprises source electrode 501 and drain electrode 502 that is positioned at 40 tops, described barrier layer.

Concrete, can utilize chemical vapor deposition method to deposit a layer thickness on whole substrate and exist

cu metallic film, metal oxide semiconductor films is carried out to a composition technique and can form described source electrode 501 and drain electrode 502.

By above-mentioned steps S101～S105, just can prepare with reference to the bottom gate thin film transistor shown in figure 5.By leaking between metal level 50 and described semiconductor active layer 30 and form above-mentioned barrier layer 40 in described source, can stop the diffusion of Cu atom in source leakage metal level 50,, and then reduce the infringement to film transistor device performance.

For above-mentioned array base palte, the utility model also provides a kind of preparation method of above-mentioned array base palte, and on the basis of above-mentioned steps S101～S105, described preparation method comprises the steps:

S106, on the substrate that completes above-mentioned steps S105, make transparent conductive film, by a composition PROCESS FOR TREATMENT, form the pixel electrode 90 being electrically connected to described drain electrode 502 as shown in Figure 6.

Concrete, can utilize chemical vapor deposition method to deposit a layer thickness on whole substrate and exist between transparent conductive film, wherein conventional transparent conductive film can be indium tin oxide (Indium Tin Oxides, be called for short ITO) or indium-zinc oxide (Indium ZincOxide, be called for short IZO) film, carries out a composition technique to transparent conductive film and can form the pixel electrode 90 being electrically connected to described drain electrode 502.

By above-mentioned steps S101～S106, just can prepare with reference to the array base palte shown in figure 6.

In addition the array base palte that, the utility model embodiment provides goes for the production of the liquid crystal indicator of the types such as a senior super dimension conversion hysteria, TN type.Wherein, a senior super dimension switch technology, its core technology characteristic description is: the electric field producing by electric field that in same plane, gap electrode edge produces and gap electrode layer and plate electrode interlayer forms multi-dimensional electric field, make in liquid crystal cell between gap electrode, directly over electrode, all aligned liquid-crystal molecules can both produce rotation, thereby improved liquid crystal operating efficiency and increased light transmission efficiency.A senior super dimension switch technology can improve the picture quality of TFT-LCD product, has high-resolution, high permeability, low-power consumption, wide visual angle, high aperture, low aberration, without advantages such as water of compaction ripples (Push Mura).

Therefore, preferred, on the basis of step S106, described method also comprises the steps:

S107, on the substrate that completes above-mentioned steps S106, make passivation layer film, form passivation layer 100 as shown in Figure 7.

Concrete, can on whole substrate, apply a layer thickness and exist

protective layer, its material is silicon nitride or transparent organic resin material normally.

S108, on the substrate that completes above-mentioned steps S107, make transparent conductive film, by a composition PROCESS FOR TREATMENT, form public electrode 110 as shown in Figure 7.

By above-mentioned steps S101～S108, just can prepare with reference to the conversion hysteria array base palte of the senior super dimension shown in figure 7.

The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of described claim.

Claims

1. A barrier layer, characterized in that it comprises at least two layers of conductive films;

Wherein, the grain boundaries in any one layer of the conductive film and the grain boundaries in the other layer of the conductive film that are in contact with each other are arranged in dislocation.

2. barrier layer according to claim 1, is characterized in that, described at least two layers of conductive films at least comprise a first layer of conductive film and a second layer of conductive film; the first layer of conductive film and the second layer of conductive film The conductive thin films all include metal elements with high thermal stability and low resistivity.

3. The barrier layer according to claim 1, characterized in that, said at least two layers of conductive film at least comprise a first layer of conductive film and a second layer of conductive film; said first layer of conductive film comprises high thermal stability and low Metal element with resistivity;

The second layer of conductive film includes a compound or alloy composed of the high thermal stability and low resistivity metal element;

Wherein, the compound includes an oxide, or a nitride, or an oxynitride compound composed of the metal element with high thermal stability and low resistivity.

4. The barrier layer according to claim 2 or 3, wherein the metal element with high thermal stability and low resistivity comprises molybdenum, or titanium, or tungsten, or tantalum, or zirconium, or cobalt, or hafnium .

5. barrier layer according to claim 2 or 3, is characterized in that, the thickness of described any layer conductive film is

6. A barrier layer, characterized by comprising at least one barrier unit, any barrier unit comprising an upper conductive film and a lower conductive film; wherein the upper conductive film includes a grain boundary-free conductive film.

7. The barrier layer according to claim 6, wherein the lower conductive film comprises a metal element with high thermal stability and low resistivity, or an alloy composed of the metal element with high thermal stability and low resistivity .

8 . The barrier layer according to claim 7 , wherein the metal element with high thermal stability and low resistivity comprises molybdenum, or titanium, or tungsten, or tantalum, or zirconium, or cobalt, or hafnium.

9. The barrier layer according to any one of claims 6-8, characterized in that, the thickness of any one of the barrier units is

10. A barrier layer, characterized in that it comprises a third conductive film with a grain boundary, and also includes a grain boundary barrier at the grain boundary of the third conductive film for filling the third conductive film grain boundaries.

11. The barrier layer according to claim 10, characterized in that, the third conductive film comprises a metal element with high thermal stability and low resistivity, or is composed of a metal element with high thermal stability and low resistivity. alloy;

The grain boundary barrier includes an oxide, a nitride, or an oxynitride compound composed of the high thermal stability and low resistivity metal element.

12 . The barrier layer according to claim 11 , wherein the metal element with high thermal stability and low resistivity comprises molybdenum, or titanium, or tungsten, or tantalum, or zirconium, or cobalt, or hafnium.

13. The barrier layer according to any one of claims 10 to 12, characterized in that the thickness of the third conductive film is

14. A thin film transistor comprising a gate electrode, a gate insulating layer, a semiconductor active layer, and a source-drain metal layer; it is characterized in that it also includes any one of claims 1 to 5, or 6 to 9, or 10 to 13 the barrier layer.

15. An array substrate, comprising a substrate and a thin film transistor disposed on the substrate; characterized in that, the thin film transistor is the thin film transistor according to claim 14.