CN203445128U - Cathode structure of semiconductor device - Google Patents
Cathode structure of semiconductor device Download PDFInfo
- Publication number
- CN203445128U CN203445128U CN201320521965.6U CN201320521965U CN203445128U CN 203445128 U CN203445128 U CN 203445128U CN 201320521965 U CN201320521965 U CN 201320521965U CN 203445128 U CN203445128 U CN 203445128U
- Authority
- CN
- China
- Prior art keywords
- finger
- semiconductor device
- linear pattern
- amplifier gates
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 24
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 3
- 238000010276 construction Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 235000012489 doughnuts Nutrition 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 2
- 241000555268 Dendroides Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Landscapes
- Thyristors (AREA)
Abstract
The utility model relates to a cathode structure of a semiconductor device, which belongs to the technology field of a semiconductor device. The cathode structure of a semiconductor device mainly solves the problems of the cathode of the present semiconductor device that the finger strips of amplification gate involutes are too long, di/dt tolerance is low, gate control open uniformity is poor, etc. The cathode structure is mainly characterized in that the finger strips of amplification gate involutes include uniformly distributed inner finger strips and V-shaped outer finger strips connected to the outer ends of the inner finger strips, the inner ends of the inner finger strips are connected with an amplification gate circular ring, two outer finger strips of each linear inner finger strip are symmetrical, the outer ends of all V-shaped outer finger strips are uniformly distributed on a circumference, and the edges of the included angles of the linear inner finger strips and the V-shaped outer finger strips are circular. The cathode structure is characterized in that the effective utilization area of each chip is raised, the initial conduction area of the chip is raised, and the conductivity uniformity of the cathode portion is raised, and the cathode structure is widely applied for cathode figure design of an electric power semiconductor rapid thyristor, a pulse thyristor and other rapid open devices.
Description
Technical field
The utility model belongs to technical field of semiconductor device, is specifically related to a kind of power semiconductor cathode construction, especially a kind of cathode construction that is applied to electric semiconductor field pulse thyristor device, high speed thyristor device, high-frequency thyratron transistor etc.
Background technology
Cathode pattern is the basic link of all kinds of thyristor device designs, to opening soon class thyristor, is even more important.The distribution of cathode pattern directly affects the dynamic parameter of device, so its graphic designs and arrange must be scientific and reasonable.General design is designed careless sample after to device parameters, then in conjunction with traditional design experience, determines final graphics.Design configuration be take mask plate as carrier, transfers to chip surface, and mark off corresponding gate pole and cathodic region by photoetching process repeatedly.
High speed thyristor or high-frequency thyratron transistor, negative electrode often adopts strip gate pole, I-shaped gate pole, involute gate pole or imitative involute gate pole, and the target face that arranges of this type of gate pole is uniformly distributed relatively.While being applied to intermediate frequency, can substantially meet the demands, but for more than pulse current 100KA, the dynamic characteristics such as the di/dt ability of former cathode pattern design, hard pulse through-current capability cannot meet requirement on devices.And the pulse ability of opening of raising thyristor, first to improve switching speed, initial turn-on size and the conducting homogeneity of pulse thyristor, can shorten like this thyristor service time, but simple amplifier gates extended line or the branch quantity improving, as good not in the uniformity of its distribution, to cause the loss of cathode area, will cause the variation for the vital a series of dynamic characteristic parameters of frequency characteristic such as on-state voltage drop, switching loss simultaneously.
Existing opening soon On current and the time that device products has taken into full account device, by lengthening amplifier gates line, as shown in Figures 1 to 4, make the amplifier gates of opening soon thyristor present radial, this irradiation structure can consist of many involutes, though improved within the specific limits service behaviour, but because its amplifier gates involute finger is oversize, in gate pole triggering and conducting process, the resistance limits of amplifier gates bar own opening time of finger end inhomogeneous, di/dt tolerance is low, gate pole is controlled and opened the shortcomings such as lack of homogeneity.
Therefore pulse class device, often, within shorter service time, reaches higher pulse peak current, develops a kind of high di/dt, applicable various sizes and negative electrode and opens more uniform semiconductor device cathode pattern and become current problem demanding prompt solution.
Summary of the invention
The technical problem that the utility model solves is to adopt to improve amplifier gates extended line, improves initial turn-on area, and makes extended line cathodic region of living in be uniformly distributed the cathode construction of structure around.What this cathode construction and arrangement method thereof had improved chip effectively utilizes area, improves the uniformity that each amplifier gates branch is opened, and is conducive to improve the difference of opening that cathode distance center gate pole distance brings, and is convenient to processing.
Technical solution of the present utility model is: a kind of semiconductor device cathode construction, comprise cathode zone and be distributed in cathodic region short dot on cathode zone, centered by the center of circle donut, the amplifier gates annulus centered by the center of circle and the amplifier gates extended line finger of gate pole, it is characterized in that: described amplifier gates extended line finger comprises radially finger in equally distributed linear pattern; In this linear pattern, one end of finger is inserted and is connected with amplifier gates annulus; The other end of finger is connected with the outer finger of V-shape in linear pattern, and the outer finger in two limits of the outer finger of this V-shape is symmetrical, and is two sections of angle in obtuse angle; The outer end points of the outer finger of each V-shape is uniformly distributed on the circumference at place; In linear pattern, the angle edge of finger, the outer finger of V-shape is circular.
In linear pattern described in technical solution of the present utility model, finger number is 12 of 4 ∽.
In linear pattern described in technical solution of the present utility model, finger width is greater than the outer finger width of V-shape.
Outside two limits of the outer finger of the V-shape described in technical solution of the present utility model, finger angle is 160 ° of 30 ∽; Angle in obtuse angle outside each limit on finger is 165 ° of 100 ∽.
In linear pattern described in technical solution of the present utility model, finger number is 12 of 8 ∽.
Technical solution of the present utility model can also be: a kind of semiconductor device cathode construction, comprise cathode zone and be distributed in cathodic region short dot on cathode zone, centered by the center of circle donut, the amplifier gates annulus centered by the center of circle and the amplifier gates extended line finger of gate pole, it is characterized in that: described amplifier gates extended line finger comprises equally distributed linear pattern finger radially; One end of this linear pattern finger is inserted and is connected with amplifier gates annulus; On this linear pattern finger, be superimposed with annular finger that be connected with linear pattern finger, equally distributed; Linear pattern finger and with the angle edge of annular finger be circular.
Annular finger described in technical solution of the present utility model is the annular finger centered by the center of circle.
Annular finger number described in technical solution of the present utility model is 6 of 2 ∽.
Annular finger number described in technical solution of the present utility model is 3.
Cathodic region short dot described in technical solution of the present utility model is square or regular hexagon or octagon arrangement or its wantonly 2 kinds of assembled arrangement.
Cathodic region short dot diameter described in technical solution of the present utility model is 0.06 ∽ 0.6mm, and spacing is 0.4 ∽ 3.5mm.
The arrange technical solution of semiconductor device cathode construction method of the utility model, comprises the following steps:
(1) take the center of circle divides annulus as axle is divided into 5 of 12 decile sectors of 4 ∽ or 2 ∽ etc. by the cathode zone of semiconductor device; Each decile cathodic region area and amplifier gates extended line ratio are basically identical.
(2) the cathode area of opening according to amplifier gates extended line finger, determines amplifier gates extended line finger shape, radical length and width; Amplifier gates extended line finger is to comprise the interior finger of equally distributed linear pattern radially, in this linear pattern, one end of finger is inserted and is connected with amplifier gates annulus, in linear pattern, the other end of finger is connected with the outer finger of V-shape, outside two limits of the outer finger of this V-shape, finger is 160 ° of angle symmetries of 30 ∽, and be and be two sections of 165 ° of obtuse angle angles of 100 ∽, the outer end points of the outer finger of each V-shape is uniformly distributed on the circumference at place, and in linear pattern, the angle edge of finger, the outer finger of V-shape is circular; Or amplifier gates extended line finger is to comprise equally distributed linear pattern finger radially, one end of this linear pattern finger is inserted and is connected with amplifier gates annulus, on this linear pattern finger, be superimposed with annular finger that be connected with linear pattern finger, equally distributed, linear pattern finger and with the angle edge of annular finger be circular;
(3) according to cathodic region short dot, arrange, determine amplifier gates extended line finger position, make amplifier gates extended line finger consistent with cathodic region short dot spacing; Cathodic region short dot is square or regular hexagon or octagon arrangement or its wantonly 2 kinds of assembled arrangement; Cathodic region short dot diameter is 0.06 ∽ 0.6mm, and spacing is 0.4 ∽ 3.5mm;
(4) in the central area in cathodic region, center gate pole is set;
(5) the lithography mask version by above-mentioned design is processed by photoetching process, designed cathode pattern is transferred to the surface of chip.
By implementing the described scheme of the utility model a kind of semiconductor device cathode construction embodiment, can reach following technique effect:
1, in semiconductor device cathode construction unit, each amplifier gates extended line finger be take the center of circle as axle decile, and the cathode zone equivalence completely that amplifier gates extended line finger is opened, has improved the uniformity that amplifier gates is opened;
2, amplifier gates extended line finger angle edge is circular, and the smooth rounding of transition, does not exist wedge angle, local defective effect when minimizing chip is dynamically opened; And guarantee convenience and the practicality of processing, need not special protection;
3, same amplifier gates extended line, amplifier gates extended line finger length is short compared with other method, takies chip diameter slightly little, and that has improved chip effectively utilizes area;
4, amplifier gates extended line finger radially narrows down, and is conducive to reduce end-to-end distance from the resistance difference with front end, and the lateral resistance of balance end-to-end distance center gate pole distance brings opens/turn-off difference.
The utlity model has and improved chip and effectively utilize area, improved chip initial turn-on area, be conducive to the branch that equilibrium distance center gate pole electrode distance distance brings and open difference, improved cathodic region and opened inhomogeneity feature.The utility model is widely used in electric semiconductor high speed thyristor, pulse thyristor etc. and opens soon device cathodes graphic designs.
Accompanying drawing explanation
In order more to clearly demonstrate the utility model or prior art scheme, below the accompanying drawing of required use in embodiment or description of the Prior Art is briefly introduced.Obviously, the accompanying drawing the following describes is only some embodiments of the present invention, to those skilled in the art, is not paying under the prerequisite of creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is that existing semiconductor device cathode construction rice shape is arranged schematic diagram.
Fig. 2 is that the imitative involute of existing semiconductor device cathode construction is arranged schematic diagram.
Fig. 3 is that existing semiconductor device cathode construction involute is arranged schematic diagram.
Fig. 4 is that existing semiconductor device cathode construction dendroid is arranged schematic diagram.
Fig. 5 is that the utility model cathode construction embodiment 1 arranges schematic diagram.
Fig. 6 is that the utility model cathode construction embodiment 2 arranges schematic diagram.
Fig. 7 is that the utility model cathode construction embodiment 3 arranges schematic diagram.
Fig. 8 is that the utility model cathode construction cathodic region short dot is arranged schematic diagram.
Finger 9a, the outer finger 9b of V-shape in Tu Zhong， center gate pole 1,7,10, amplifier gates 2, cathode zone 3,5,8, annular finger 4, linear pattern finger 6, amplifier gates extended line finger 9, linear pattern.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, to the utility model, embodiment intactly describes.Obviously, described embodiment is only a part of embodiment of the present utility model, rather than whole embodiment.Any based on embodiment of the present utility model, those skilled in the art obtain under the prerequisite of not making creative work all other embodiment, belong to the scope that the utility model is protected.
Embodiment 1 as shown in Figure 5.Semiconductor device cathode construction comprises cathode zone 3, cathodic region short dot, donut 1, the amplifier gates annulus centered by the center of circle and the amplifier gates extended line finger 2 of gate pole centered by the center of circle.Amplifier gates extended line finger 2 comprises 8 interior fingers of equally distributed linear pattern radially, and in linear pattern, one end of finger is inserted also and is connected with amplifier gates annulus, and the other end is connected with the outer finger of V-shape.Article 8, in linear pattern, finger is divided into 8 sectors of decile by cathode zone, and every 45 ° is a host sectors.The outer finger symmetry in two limits of the outer finger of V-shape, and be and be two sections of 157.5 ° of obtuse angle angles.The outer end points of the outer finger of each V-shape is uniformly distributed on the circumference at place, and every 22.5 degree are branch sector.In linear pattern, the outer finger of finger and V-shape forms Y shape finger.In linear pattern, the angle edge of finger, the outer finger of V-shape is circular.Be characterized in, according to subregion radially, each sector being uniformly distributed, guarantee the uniformity of opening between each sector.In cathode zone, amplifier gates shape finger is the finger that each section of width do not wait, and in its linear pattern, finger is wider, and the outer finger of V-shape is slightly narrow.
As shown in Figure 8.Cathodic region short dot is that octagon and square combination are arranged.Cathodic region short dot diameter is 0.06 ∽ 0.6mm, and spacing is 0.4 ∽ 3.5mm.All can be used for embodiment 1,2,3.
Claims (10)
1. a semiconductor device cathode construction, comprise cathode zone and be distributed in cathodic region short dot on cathode zone, centered by the center of circle donut, the amplifier gates annulus centered by the center of circle and the amplifier gates extended line finger of gate pole, it is characterized in that: described amplifier gates extended line finger comprises radially finger in equally distributed linear pattern; In this linear pattern, one end of finger is inserted and is connected with amplifier gates annulus; The other end of finger is connected with the outer finger of V-shape in linear pattern, and the outer finger in two limits of the outer finger of this V-shape is symmetrical, and is two sections of angle in obtuse angle; The outer end points of the outer finger of each V-shape is uniformly distributed on the circumference at place; In linear pattern, the angle edge of finger, the outer finger of V-shape is circular.
2. a kind of semiconductor device cathode construction according to claim 1, is characterized in that: in described linear pattern, finger number is 12 of 4 ∽.
3. a kind of semiconductor device cathode construction according to claim 1 and 2, is characterized in that: in described linear pattern, finger width is greater than the outer finger width of V-shape.
4. a kind of semiconductor device cathode construction according to claim 1 and 2, is characterized in that: outside two limits of the described outer finger of V-shape, finger angle is 160 ° of 30 ∽; Angle in obtuse angle outside each limit on finger is 165 ° of 100 ∽.
5. a kind of semiconductor device cathode construction according to claim 2, is characterized in that: in described linear pattern, finger number is 12 of 8 ∽.
6. a semiconductor device cathode construction, comprise cathode zone and be distributed in cathodic region short dot on cathode zone, centered by the center of circle donut, the amplifier gates annulus centered by the center of circle and the amplifier gates extended line finger of gate pole, it is characterized in that: described amplifier gates extended line finger comprises equally distributed linear pattern finger radially; One end of this linear pattern finger is inserted and is connected with amplifier gates annulus; On this linear pattern finger, be superimposed with annular finger that be connected with linear pattern finger, equally distributed; Linear pattern finger and with the angle edge of annular finger be circular.
7. a kind of semiconductor device cathode construction according to claim 6, is characterized in that: described annular finger is the annular finger centered by the center of circle.
8. according to a kind of semiconductor device cathode construction described in claim 6 or 7, it is characterized in that: described annular finger number is 6 of 2 ∽.
9. according to a kind of semiconductor device cathode construction described in claim 1 or 6, it is characterized in that: described cathodic region short dot is arranged as square or regular hexagon or octagon or its wantonly 2 kinds of assembled arrangement.
10. according to a kind of semiconductor device cathode construction described in claim 1 or 6, it is characterized in that: described cathodic region short dot diameter is 0.06 ∽ 0.6mm, spacing is 0.4 ∽ 3.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320521965.6U CN203445128U (en) | 2013-08-26 | 2013-08-26 | Cathode structure of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320521965.6U CN203445128U (en) | 2013-08-26 | 2013-08-26 | Cathode structure of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203445128U true CN203445128U (en) | 2014-02-19 |
Family
ID=50096152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320521965.6U Expired - Lifetime CN203445128U (en) | 2013-08-26 | 2013-08-26 | Cathode structure of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203445128U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025036072A (en) * | 2023-08-30 | 2025-03-14 | 台亞半導體股▲フン▼有限公司 | Wide band gap diode and method of manufacturing same |
-
2013
- 2013-08-26 CN CN201320521965.6U patent/CN203445128U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025036072A (en) * | 2023-08-30 | 2025-03-14 | 台亞半導體股▲フン▼有限公司 | Wide band gap diode and method of manufacturing same |
| JP7756197B2 (en) | 2023-08-30 | 2025-10-17 | 台亞半導體股▲フン▼有限公司 | Wide bandgap diode and method of manufacturing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102738257A (en) | Low-cost efficient solar cell electrode grid line structure | |
| CN203445128U (en) | Cathode structure of semiconductor device | |
| CN103337515A (en) | Gate region of power semiconductor chip | |
| Huang et al. | Simulation Study of a Low Switching Loss FD-IGBT With High $ dI/dt $ and $ dV/dt $ Controllability | |
| CN202948932U (en) | A Trench Type IGBT Layout Structure | |
| CN203134807U (en) | Insulated gate bipolar transistor | |
| CN202332860U (en) | High-power thyristor | |
| CN203026511U (en) | IGBT layout | |
| CN204167327U (en) | A kind of diode of soft recovery afterflow | |
| CN203150555U (en) | Quick switching-on thyristor | |
| CN203521422U (en) | A layout of an IGBT | |
| CN103779403A (en) | IGBT chip structure | |
| CN212114035U (en) | Electron accelerator earthing device | |
| CN103926434A (en) | Shielding cover for lightning arrester test | |
| CN103094333B (en) | A kind of high-power thyristor | |
| CN205595335U (en) | Novel bars structure | |
| CN205141004U (en) | High -power infrared LED chip electrode structure | |
| CN108428737A (en) | Semiconductor devices with interdigitated electrodes | |
| CN214518059U (en) | Auxiliary welding device for field effect transistor | |
| CN203746860U (en) | IGBT chip structure | |
| CN202948448U (en) | An IGBT layout | |
| CN220210423U (en) | Frequency tripling IGBT control system | |
| CN104485356B (en) | A kind of low capacitance low-voltage discharge tube | |
| CN114220845B (en) | Power semiconductor devices | |
| CN107942615B (en) | IGBT or MOSFET layout structure for electric automobile |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140219 |