CN203398167U - Tunneling magneto-resistor device - Google Patents
Tunneling magneto-resistor device Download PDFInfo
- Publication number
- CN203398167U CN203398167U CN201320405203.XU CN201320405203U CN203398167U CN 203398167 U CN203398167 U CN 203398167U CN 201320405203 U CN201320405203 U CN 201320405203U CN 203398167 U CN203398167 U CN 203398167U
- Authority
- CN
- China
- Prior art keywords
- stress
- resistor device
- material layer
- tunneling magneto
- ferroelectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005641 tunneling Effects 0.000 title claims abstract description 17
- 230000005291 magnetic effect Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 9
- 239000012782 phase change material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Landscapes
- Hall/Mr Elements (AREA)
Abstract
In actual use, a tunneling magneto-resistor device requires a bias magnetic field, and the bias magnetic field is different for different application of the tunneling magneto-resistor device. The bias magnetic field is provided by a coil in the prior art, which is complex in structure and high in power consumption. The tunneling magneto-resistor device comprises a ferroelectric substrate, a stress magnetic phase-transited material layer, an insulating layer and a ferromagnetic layer, wherein the stress magnetic phase-transited material layer is grown on the ferroelectric substrate, the insulating layer is grown on the stress magnetic phase-transited material layer, and the ferromagnetic layer is grown on the insulating layer. When an electric field is applied to the ferroelectric substrate, the ferroelectric substrate shrinks or stretches under the effect of the electric field. The stress is transmitted to the stress magnetic phase-transited material layer to change the magnetic state thereof and adjusts the bias state of the tunneling magneto-resistor device. The tunneling magneto-resistor device is compatible with a conventional electrical control and is low in power dissipation.
Description
Technical field
The utility model relates to sensor field, refers more particularly to a kind of tunneling magnetic resistance device.
Background technology
Magnetic Sensor is widely used in all trades and professions such as life, industry, aviation.Tunneling magnetic resistance device magneto-resistor is at room temperature greater than 100%, wide of highly sensitive Magnetic Sensor field application.In practical application, tunneling magnetic resistance device need to provide certain bias magnetic field, and the bias magnetic field that different application needs is not quite similar.Existing method is to adopt coil that bias magnetic field is provided, and exists the shortcomings such as complex structure, power consumption height.
Utility model content
The utility model provides a kind of tunneling magnetic resistance device, utilizes stress magnetic phase change material to prepare tunneling magnetic resistance device, relies on the bias state that stress is controlled tunneling magnetic resistance device, has and the advantage such as existing electric control is compatible, low in energy consumption.Technical solution adopted in the utility model is, a kind of tunneling magnetic resistance device, comprise ferroelectric substrate, stress magnetic phase change material layer, insulating barrier, ferromagnetic layer, wherein, stress magnetic phase change material layer growth is in ferroelectric substrate, insulating barrier is grown on stress magnetic phase change material layer, and ferromagnetic layer is grown on insulating barrier.
Ferroelectric substrate is applied to electric field, and under the effect of electric field, ferroelectric substrate occurs flexible, and stress passes to stress magnetic phase change material layer, changes its magnetic state, regulates the bias state of tunneling magnetic resistance device.The utlity model has and the advantage such as existing electric control is compatible, low in energy consumption.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1 ferroelectric substrate, 2 stress magnetic phase change material layers, 3 insulating barriers, 4 ferromagnetic layers.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the utility model.
Fig. 1 is structural representation of the present utility model, ferroelectric substrate 1, stress magnetic phase change material layer 2, insulating barrier 3, ferromagnetic layer 4, wherein, stress magnetic phase change material layer 2 is grown in ferroelectric substrate 1, insulating barrier 3 is grown on stress magnetic phase change material layer 2, and ferromagnetic layer 4 is grown on insulating barrier 3.Ferroelectric substrate 1 is applied to electric field, and under the effect of electric field, ferroelectric substrate 1 occurs flexible, and stress passes to stress magnetic phase change material layer 2, changes its magnetic state, regulates the bias state of tunneling magnetic resistance device.The utlity model has and the advantage such as existing electric control is compatible, low in energy consumption.
More than show and described basic principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (1)
1. a tunneling magnetic resistance device, comprise ferroelectric substrate, stress magnetic phase change material layer, insulating barrier, ferromagnetic layer, it is characterized in that: described stress magnetic phase change material layer growth is in ferroelectric substrate, and insulating barrier is grown on stress magnetic phase change material layer, and ferromagnetic layer is grown on insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320405203.XU CN203398167U (en) | 2013-07-02 | 2013-07-02 | Tunneling magneto-resistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320405203.XU CN203398167U (en) | 2013-07-02 | 2013-07-02 | Tunneling magneto-resistor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203398167U true CN203398167U (en) | 2014-01-15 |
Family
ID=49909675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320405203.XU Expired - Fee Related CN203398167U (en) | 2013-07-02 | 2013-07-02 | Tunneling magneto-resistor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203398167U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720188A (en) * | 2016-03-03 | 2016-06-29 | 天津理工大学 | Magnetoelectric effect based magnetoelectric memory element of ferroelectric/ferromagnetic composite thin film |
| CN105762273B (en) * | 2016-03-03 | 2018-07-24 | 天津理工大学 | A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film |
| CN116191019A (en) * | 2023-04-10 | 2023-05-30 | 北京航空航天大学 | A Phase Shift Keying Dual Driver Low Frequency Transmitting Antenna Based on Magnetic Phase Change Material |
| CN116417796A (en) * | 2023-04-10 | 2023-07-11 | 北京航空航天大学 | Amplitude shift keying low frequency signal-transmitting antenna based on magnetic phase-change material |
-
2013
- 2013-07-02 CN CN201320405203.XU patent/CN203398167U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720188A (en) * | 2016-03-03 | 2016-06-29 | 天津理工大学 | Magnetoelectric effect based magnetoelectric memory element of ferroelectric/ferromagnetic composite thin film |
| CN105762273B (en) * | 2016-03-03 | 2018-07-24 | 天津理工大学 | A kind of magnetoelectricity storage unit and preparation method thereof based on double-layer ferro-electricity film |
| CN116191019A (en) * | 2023-04-10 | 2023-05-30 | 北京航空航天大学 | A Phase Shift Keying Dual Driver Low Frequency Transmitting Antenna Based on Magnetic Phase Change Material |
| CN116417796A (en) * | 2023-04-10 | 2023-07-11 | 北京航空航天大学 | Amplitude shift keying low frequency signal-transmitting antenna based on magnetic phase-change material |
| CN116191019B (en) * | 2023-04-10 | 2025-10-14 | 北京航空航天大学 | A phase-shift keying dual-drive low-frequency transmitting antenna based on magnetic phase change material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203398167U (en) | Tunneling magneto-resistor device | |
| GB2523934A (en) | Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same | |
| JP2014183319A5 (en) | Magnetic bonding | |
| ATE554508T1 (en) | BATTERY WITH REDUCED MAGNETIC LOSS | |
| WO2012064946A3 (en) | Magnetically coupled actuation apparatus and method | |
| EP2891893A3 (en) | Current sensor and current sensor module | |
| WO2012101448A3 (en) | Conductive element | |
| WO2014198746A3 (en) | Device for moving aircraft along the ground | |
| SG195087A1 (en) | Superconducting element for superconducting current limiter, method for manufacturing superconducting element for superconducting current limiter, and superconducting current limiter | |
| CN104319086A (en) | Air gap type voltage regulating device | |
| CN203406155U (en) | Constant permeability magnetic mutual inductor | |
| CN204204608U (en) | GAP TYPE regulator | |
| CN203277391U (en) | Field effect transistor | |
| WO2012142423A3 (en) | Thermally activated magnetic and resistive aging | |
| CN204558534U (en) | A kind of force snesor | |
| EP2779165A3 (en) | Gap between magnetic materials | |
| CN205566253U (en) | An intelligent temperature control switch | |
| CN203287508U (en) | Magnetic sensor structure | |
| CN202495648U (en) | Slide-wire rheostat switch for children | |
| CN203125421U (en) | Electromagnetic screwdriver with controllable magnetism | |
| CN203941281U (en) | A kind of giant magneto-resistance sensor | |
| CN202259239U (en) | High stability electronic triode | |
| CN205136751U (en) | Miniature electrical ball valve | |
| CN201557362U (en) | Magnetism isolating material | |
| CN203351328U (en) | Current magnetic field sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140115 Termination date: 20140702 |
|
| EXPY | Termination of patent right or utility model |