CN203387396U - IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions - Google Patents
IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions Download PDFInfo
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- CN203387396U CN203387396U CN201320458016.8U CN201320458016U CN203387396U CN 203387396 U CN203387396 U CN 203387396U CN 201320458016 U CN201320458016 U CN 201320458016U CN 203387396 U CN203387396 U CN 203387396U
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 238000011084 recovery Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 29
- 230000003139 buffering effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Abstract
The utility model discloses an IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions. The IGBT inverter buffer circuit not only can ensure an absorption effect of surge voltage, but also can greatly reduce the discharge time of overvoltage energy through discharge voltage in a discharge circuit, thereby improving the switching frequency of a switching device IGBT, and well meeting requirements for the IGBT inverter buffer circuit in high-frequency application occasions. The IGBT inverter buffer circuit disclosed by the utility model can be widely applied to power supply products.
Description
Technical field
The utility model relates to electronic circuit field, relates in particular to a kind of IGBT inverter buffer circuit that can be used for high frequency condition.
Background technology
The IGBT inverter is applied in higher occasions of operating frequency such as frequency converter, Switching Power Supply and distributed generation systems more, for example distributed generation system as photovoltaic generating system in, in inverter, the switching frequency of switching device will reach even several ten thousand hertz of several KHz.Under so high operating frequency, make the turn-on and turn-off of switching device very frequent, the turn-on and turn-off time is very short.Because there is stray inductance in main circuit, when IGBT turn-offs, main circuit current sharply changes, and on the stray inductance of main circuit, can bring out high voltage, makes IGBT bear very large surge voltage at shutdown moment.In addition, both end voltage raises extremely owing to oppositely recovering with the antiparallel fly-wheel diode of IGBT, also can produce the surge voltage similar to turn-offing surge voltage.The existence of surge voltage, can affect the normal operation of IGBT, as switching loss is large, makes IGBT overheated, when serious, even causes IGBT to damage.In order to improve the reliability of IGBT work, method more commonly used is to use buffer circuit.
IGBT inverter buffer circuit will guarantee when switching device turn-offs, and absorbs the caused shutoff surge voltage of major loop stray inductance energy, and absorbed overvoltage energy once turn-offed on switching device to discharge off before action.The inverter operating frequency is higher, and it is just shorter that buffer circuit completes the time of the above-mentioned course of work, and this buffer circuit to the IGBT inverter has proposed very high requirement.
The normal buffer circuit adopted of conventional I GBT inverter has 3 kinds, and the first is the electric capacity buffer circuit, is applicable to the IGBT of small-power grade, to transient voltage is very effective and cost is low.But the sort buffer circuit, along with the increase of power grade, can produce vibration with the DC bus stray inductance.The second RCD buffer circuit can be avoided this situation, because fast recovery diode can the clamp transient voltage, thereby suppress resonance, produce, but when power grade further increases, the loop stray inductance of sort buffer circuit can become very large, causes effectively controlling transient voltage.The third is electric discharge prevention type buffer circuit, but sort circuit easily causes turn-offing the inhibition deficiency of surge voltage, or causing the current oscillation of buffer circuit, the corresponding increase of collector current peak value while making the IGBT conducting, cause the conducting of IGBT to become unstable.
The utility model content
In order to solve the problems of the technologies described above, the purpose of this utility model is to provide a kind of assimilation effect that can guarantee surge voltage, meets a kind of IGBT inverter buffer circuit that can be used for high frequency condition of high frequency applications occasion.
The technical scheme that the utility model adopts is:
A kind of IGBT inverter buffer circuit that can be used for high frequency condition, comprise an IGBT pipe, the 2nd IGBT pipe, the first inductance, the second inductance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity, the first diode, the second diode, the 3rd diode, the 4th diode, the first resistance and the second resistance, the collector electrode of a described IGBT pipe is connected with the first electric capacity and then with the positive terminal of the first diode by the first inductance successively, the negative pole end of described the first diode respectively with the emitter of an IGBT pipe, the collector electrode of the 2nd IGBT pipe is connected with the positive terminal of the second diode, the positive terminal of described the first diode also is connected with the negative pole end of the 3rd diode, the positive terminal of the 3rd diode is connected with the second resistance and then with the emitter of the 2nd IGBT pipe by the 4th electric capacity successively, the negative pole end of described the second diode is connected with the second inductance and then with the emitter of the 2nd IGBT pipe by the second electric capacity successively, the collector electrode of a described IGBT pipe also is connected with the 3rd electric capacity and then with the negative pole end of the 4th diode by the first resistance successively, and the positive terminal of described the 4th diode is connected with the negative pole end of the second diode.
Be further used as preferred embodiment, described the first diode is fast recovery diode.
Be further used as preferred embodiment, described the second diode is fast recovery diode.
Be further used as preferred embodiment, described the first electric capacity is Absorption Capacitance.
Be further used as preferred embodiment, described the second electric capacity is Absorption Capacitance.
The beneficial effects of the utility model are:
A kind of IGBT inverter buffer circuit that can be used for high frequency condition of the utility model, can not only guarantee the assimilation effect of surge voltage, and by the discharge voltage in discharge loop, can greatly shorten the discharge time of overvoltage energy, improve the switching frequency of switching device IGBT, met well in the high frequency applications occasion requirement to IGBT inverter buffer circuit.
The accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further:
Fig. 1 is a kind of circuit theory diagrams that can be used for the IGBT inverter buffer circuit of high frequency condition of the utility model;
Fig. 2 is the working circuit diagram of the utility model IGBT inverter buffer circuit;
Fig. 3 is the utility model IGBT inverter buffer circuit electric discharge equivalent circuit diagram;
Fig. 4 is the shutoff oscillogram of the utility model and traditional buffer circuit IGBT pipe;
Fig. 5 is the overvoltage discharge waveform figure of the utility model and traditional buffer circuit buffer capacitor.
Embodiment
With reference to Fig. 1, a kind of IGBT inverter buffer circuit that can be used for high frequency condition of the utility model, comprise an IGBT pipe T1, the 2nd IGBT pipe T2, the first inductance L 1, the second inductance L 2, the first capacitor C 1, the second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the first resistance R 1 and the second resistance R 2, the collector electrode of a described IGBT pipe T1 is connected with the first capacitor C 1 and then with the positive terminal of the first diode D1 by the first inductance L 1 successively, and the negative pole end of described the first diode D1 is managed respectively the emitter of T1 with an IGBT, the collector electrode of the 2nd IGBT pipe T2 is connected with the positive terminal of the second diode D2, the positive terminal of described the first diode D1 also is connected with the negative pole end of the 3rd diode D3, the positive terminal of the 3rd diode D3 is connected with the second resistance R 2 and then with the emitter of the 2nd IGBT pipe T2 by the 4th capacitor C 4 successively, the negative pole end of described the second diode D2 is connected with the second inductance L 2 and then with the emitter of the 2nd IGBT pipe T2 by the second capacitor C 2 successively, the collector electrode of a described IGBT pipe T1 also is connected with the 3rd capacitor C 3 and then with the negative pole end of the 4th diode D4 by the first resistance R 1 successively, the positive terminal of described the 4th diode D4 is connected with the negative pole end of the second diode D2.
Be further used as preferred embodiment, described the first diode D1 is fast recovery diode.
Be further used as preferred embodiment, described the second diode D2 is fast recovery diode.
Be further used as preferred embodiment, described the first capacitor C 1 is Absorption Capacitance.
Be further used as preferred embodiment, described the second capacitor C 2 is Absorption Capacitance.
With reference to Fig. 2, wherein, the first bus inductance L P1 and the second bus inductance L P2 are the bus stray inductance, the stray inductance that the first inductance L 1 and the second inductance L 2 are buffer circuit, the first capacitor C 1 and the second capacitor C 2 are buffer capacitor, the 3rd capacitor C 3 and the 4th capacitor C 4 are discharge capacity, and the first resistance R 1 and the second resistance R 2 are buffer resistance, and the first diode D1 and the second diode D2 are buffering diode.The course of work of the present utility model is divided into the linearisation change of current, bus stray inductance resonant transfer energy and buffering capacitor discharge three phases altogether.In the first two in the stage, the operation principle of the utility model IGBT inverter buffer circuit and traditional IGBT inverter buffer circuit is as broad as long, also there will be two due to voltage spikes in the shutoff voltage waveform of IGBT pipe, mainly by the stray inductance of buffer circuit and the bus stray inductance of major loop, caused respectively, in second stage, finish, in bus stray inductance LP after the whole transferring buffered capacitor C S of energy, buffer circuit enters three phases, be buffer capacitor CS discharge regime, its equivalent electric circuit as shown in Figure 3.
With reference to Fig. 3, the discharge loop in visible Fig. 3 has increased discharge capacity, i.e. the 3rd capacitor C 3, the three capacitor C 3 and buffering capacitor C S electric discharge equivalent capacity in series C.
Equivalent capacity: C=C3*CS/ (C3+CS).
Obviously equivalent capacity C is less than the value of buffer capacitor CS.Therefore, in the situation that the buffer resistance value is constant, the RC timeconstantτ of Fig. 3 is less, this means in the situation that do not change buffer capacitor CS and buffering resistance value, the utility model IGBT inverter buffer circuit has shortened the discharge time of buffer capacitor CS, has met the requirement of IGBT inverter under the frequency applications occasion.
With reference to Fig. 4 and Fig. 5, in two kinds of buffer circuits, current-voltage waveform when the IGBT pipe turn-offs as shown in Figure 4, Fig. 4 a is the shutoff waveform of the slow IGBT pipe of traditional buffer circuit, Fig. 4 b is the shutoff waveform of the utility model buffer circuit IGBT pipe, therefrom can see that two kinds of voltage, current waveforms in turn off process are basic identical, turn-off surge voltage and be controlled in 350V.Can also see in the drawings a vibration district is arranged, this is that reverse recovery due to buffering diode causes.Overvoltage discharge waveform on the buffer capacitor of two kinds of buffer circuits as shown in Figure 5, Fig. 5 a is the overvoltage discharge waveform on traditional buffer circuit buffer capacitor CS, Fig. 5 b is the overvoltage discharge waveform on the utility model buffer circuit buffer capacitor CS, Fig. 5 a, 5b adopt same coordinate so that analyze, as seen from the figure: because overvoltage on the buffer capacitor of IGBT inverter buffer circuit of the present utility model constantly just can discharge off at 70us; And traditional buffer circuit constantly could discharge off at 90us.Therefore, the utility model IGBT inverter buffer circuit has shortened the discharge time of overvoltage energy, has improved the switching frequency of switching device IGBT, has met in the high frequency applications occasion requirement to IGBT inverter buffer circuit.
More than that better enforcement of the present utility model is illustrated, but the utility model is created and is not limited to described embodiment, those of ordinary skill in the art also can do and make all equivalent variations or replacement under the prerequisite without prejudice to the utility model spirit, and the distortion that these are equal to or replacement all are included in the application's claim limited range.
Claims (5)
1. an IGBT inverter buffer circuit that can be used for high frequency condition, it is characterized in that: comprise an IGBT pipe (T1), the 2nd IGBT pipe (T2), the first inductance (L1), the second inductance (L2), the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3), the 4th electric capacity (C4), the first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode (D4), the first resistance (R1) and the second resistance (R2), the collector electrode of a described IGBT pipe (T1) is connected with the first electric capacity (C1) and then with the positive terminal of the first diode (D1) by the first inductance (L1) successively, the negative pole end of described the first diode (D1) is managed respectively the emitter of (T1) with an IGBT, the collector electrode of the 2nd IGBT pipe (T2) is connected with the positive terminal of the second diode (D2), the positive terminal of described the first diode (D1) also is connected with the negative pole end of the 3rd diode (D3), the positive terminal of the 3rd diode (D3) is connected with the second resistance (R2) and then with the emitter of the 2nd IGBT pipe (T2) by the 4th electric capacity (C4) successively, the negative pole end of described the second diode (D2) is connected with the second inductance (L2) and then with the emitter of the 2nd IGBT pipe (T2) by the second electric capacity (C2) successively, the collector electrode of a described IGBT pipe (T1) also is connected with the 3rd electric capacity (C3) and then with the negative pole end of the 4th diode (D4) by the first resistance (R1) successively, the positive terminal of described the 4th diode (D4) is connected with the negative pole end of the second diode (D2).
2. a kind of IGBT inverter buffer circuit that can be used for high frequency condition according to claim 1, it is characterized in that: described the first diode (D1) is fast recovery diode.
3. a kind of IGBT inverter buffer circuit that can be used for high frequency condition according to claim 1, it is characterized in that: described the second diode (D2) is fast recovery diode.
4. a kind of IGBT inverter buffer circuit that can be used for high frequency condition according to claim 1, it is characterized in that: described the first electric capacity (C1) is Absorption Capacitance.
5. a kind of IGBT inverter buffer circuit that can be used for high frequency condition according to claim 1, it is characterized in that: described the second electric capacity (C2) is Absorption Capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320458016.8U CN203387396U (en) | 2013-07-30 | 2013-07-30 | IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320458016.8U CN203387396U (en) | 2013-07-30 | 2013-07-30 | IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions |
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| CN203387396U true CN203387396U (en) | 2014-01-08 |
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| CN201320458016.8U Expired - Fee Related CN203387396U (en) | 2013-07-30 | 2013-07-30 | IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515361A (en) * | 2015-11-26 | 2016-04-20 | 深圳市华星光电技术有限公司 | Buffer circuit |
| CN106411112A (en) * | 2016-10-12 | 2017-02-15 | 长沙群瑞电子科技有限公司 | Surge overvoltage absorption circuit used for power device |
| CN106452036A (en) * | 2016-10-25 | 2017-02-22 | 广州供电局有限公司 | A modularized multi-level inverter based on an H-bridge and a buffer circuit thereof |
| WO2017041331A1 (en) * | 2015-09-09 | 2017-03-16 | 深圳市华星光电技术有限公司 | Drive circuit and liquid crystal display apparatus |
| CN108141129A (en) * | 2015-09-14 | 2018-06-08 | Tm4股份有限公司 | It is configured to the electric power converter of limit switch overvoltage |
| CN116207964A (en) * | 2023-03-31 | 2023-06-02 | 青岛海尔空调电子有限公司 | Frequency converter and electronic equipment |
-
2013
- 2013-07-30 CN CN201320458016.8U patent/CN203387396U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017041331A1 (en) * | 2015-09-09 | 2017-03-16 | 深圳市华星光电技术有限公司 | Drive circuit and liquid crystal display apparatus |
| CN108141129A (en) * | 2015-09-14 | 2018-06-08 | Tm4股份有限公司 | It is configured to the electric power converter of limit switch overvoltage |
| CN108141129B (en) * | 2015-09-14 | 2020-07-14 | Tm4股份有限公司 | Power converter configured to limit switching overvoltage |
| CN105515361A (en) * | 2015-11-26 | 2016-04-20 | 深圳市华星光电技术有限公司 | Buffer circuit |
| CN105515361B (en) * | 2015-11-26 | 2018-07-06 | 深圳市华星光电技术有限公司 | A kind of buffer circuit |
| CN106411112A (en) * | 2016-10-12 | 2017-02-15 | 长沙群瑞电子科技有限公司 | Surge overvoltage absorption circuit used for power device |
| CN106452036A (en) * | 2016-10-25 | 2017-02-22 | 广州供电局有限公司 | A modularized multi-level inverter based on an H-bridge and a buffer circuit thereof |
| CN106452036B (en) * | 2016-10-25 | 2019-08-16 | 广州供电局有限公司 | Modularization multi-level converter and its buffer circuit based on H bridge |
| CN116207964A (en) * | 2023-03-31 | 2023-06-02 | 青岛海尔空调电子有限公司 | Frequency converter and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN JINGFUYUAN TECH. CO., LTD. Free format text: FORMER NAME: SHENZHEN JINGFUYUAN TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: Shenzhen Nanshan District City, Guangdong province 518055 white pine Luxili Nangang Second Industrial Park 12 Building 1, 2, 5 floor Patentee after: SHENZHEN JINGFUYUAN TECHNOLOGY CO., LTD. Address before: Shenzhen Nanshan District City, Guangdong province 518055 white pine Luxili Nangang Second Industrial Park 12 Building 1, 2, 5 floor Patentee before: Shenzhen Jingfuyuan Tech Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140108 Termination date: 20190730 |
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| CF01 | Termination of patent right due to non-payment of annual fee |