CN203299499U - Array substrate and display device - Google Patents

Abstract

The utility model discloses an array substrate and a display device. The array substrate comprises a thin film transistor arranged on a substrate and an electrode structure arranged on the thin film transistor. The electrode structure comprises a pixel electrode and a public electrode which are insulated from each other. The array substrate further comprises a black matrix arranged above the thin film transistor, and an orthographic projection of the black matrix on the substrate covers the thin film transistor. The black matrix is electrically connected with the public electrode and used for providing public electrode signals for the public electrode. Due to the fact that a function that the black matrix reuses a public electrode line is adopted, the black matrix is electrically connected with the public electrode and provides the public electrode signals for the public electrode. Compared with the prior art of arranging the public electrode line in the same layer as the grid electrode independently, occupation of each sub pixel unit opening area can be reduced, and opening rate of the array substrate is improved. Due to the fact that the black matrix used as the public electrode line is arranged above the thin film transistor, film layers penetrated by a via hole required when the black matrix is connected with the public electrode can be reduced, and the difficulty of a manufacturing process is reduced.

Description

A kind of array substrate and display device

technical field

The utility model relates to the field of display technology, in particular to an array substrate and a display device.

Background technique

The liquid crystal display panel is mainly composed of an array substrate, an opposite substrate, and liquid crystal molecules located between the two substrates; wherein, the array substrate is provided with sub-pixel units arranged in a matrix, and each sub-pixel unit is provided with a thin film transistor ( TFT) and the pixel electrodes connected to the thin film transistors, and the common electrodes and color filters corresponding to each sub-pixel unit are arranged on the opposite substrate. When aligning the liquid crystal display panel, it is necessary to align the color filters on the opposite substrate with the sub-pixel units on the array substrate. During the alignment, alignment errors are prone to occur. In order to avoid the occurrence of alignment errors, There is a structure (COA, CF on Array) in which the color filter is directly placed on the array substrate.

At present, most of the existing COA structures are directly and simply superimposed color filters on the array substrate. Take the COA structure of Advanced Super Dimension Switch (ADS, Advanced Super Dimension Switch) mode as an example, as shown in Figure 1. The structure on the array substrate includes: a gate 102 and a common electrode line 103 sequentially arranged on the base substrate 101, a gate insulating layer 104, an active layer 105, a source 106 and a drain 107, a first insulating layer 108, Black matrix 109 , color filter 110 , pixel electrode 111 , second insulating layer 112 , and common electrode 113 . Wherein, the common electrode 113 is electrically connected to the common electrode line 103 through the via hole a penetrating through the gate insulating layer 104 , the first insulating layer 108 , the color filter 110 and the second insulating layer 112 .

The array substrate with the above structure needs to use 10 mask plates (Mask) for patterning during preparation, and the steps for patterning using Mask are as follows: preparing the pattern of gate 102 and common electrode line 103, the active layer 105, the source electrode 106 and the drain electrode 107, the gate insulating layer 104 and the first insulating layer 108, the black matrix 109, the color filter 110, the pixel electrode 111, the second insulating layer 112, The pattern of the common electrode 113, in which, since the color filter 110 is generally composed of three primary colors (red, green, blue) cross-arranged monochromatic filters, it is necessary to use three mask patterns for composition.

In the above structure, the opaque common electrode line 103 and the gate 102 are arranged on the same layer. On the one hand, it will occupy the opening area of each sub-pixel unit, which affects the aperture ratio. On the other hand, the common electrode 113 needs to pass through the deeper The via hole a is electrically connected to the common electrode line 103. Since the materials of the gate insulating layer 104, the first insulating layer 108, the color filter 110 and the second insulating layer 112 penetrated by the via hole a are different, in the preparation The process requires multiple patterning to form, which also increases the difficulty of the overall preparation process.

To sum up, the existing ADS mode array substrate with COA structure has the problems of relatively difficult preparation process and low aperture ratio.

Utility model content

The embodiment of the utility model provides an array substrate and a display device, which can increase the aperture ratio of the COA structure and reduce the difficulty of preparation.

An embodiment of the present invention provides an array substrate, including a base substrate, a thin film transistor located on the base substrate, and an electrode structure located on the thin film transistor, and the electrode structure includes mutually insulated pixels electrode and common electrode, also includes:

A black matrix located above the thin film transistor and covering the thin film transistor in an orthographic projection on the base substrate;

The black matrix is electrically connected to the common electrode for providing common electrode signals to the common electrode.

A display device provided by an embodiment of the present invention includes the above-mentioned array substrate provided by an embodiment of the present invention.

The beneficial effects of the utility model embodiment include:

An array substrate and a display device provided by an embodiment of the present invention, the array substrate includes a thin film transistor thin film transistor located on the base substrate, and an electrode structure located on the thin film transistor, the electrode structure includes mutually insulated pixel electrodes and common electrodes , further comprising: a black matrix located above the thin film transistor and covering the thin film transistor in an orthographic projection on the base substrate; the black matrix is electrically connected to the common electrode, and is used to provide a common electrode signal to the common electrode. Due to the use of the black matrix to multiplex the function of the common electrode line, it is electrically connected to the common electrode to provide a common electrode signal, compared with the prior art where the common electrode line on the same layer as the gate is separately provided, the opening of each sub-pixel unit can be reduced Occupancy of the area increases the aperture ratio of the array substrate. Moreover, since the black matrix used as the common electrode line is arranged above the thin film transistor, the film layers through which the black matrix needs to be connected to the common electrode can be reduced, and the difficulty of the manufacturing process is also reduced.

Description of drawings

Fig. 1 is the structural representation of the ADS mode array substrate of existing COA structure;

2a to 2c are schematic structural views of the array substrate provided by the embodiment of the present invention;

FIG. 3 is a flow chart of a method for preparing an array substrate provided by an embodiment of the present invention;

4a to 4f are structural schematic diagrams of each step of forming the pattern of the common electrode and the black matrix through a patterning process in the preparation method provided by the embodiment of the present invention.

Detailed ways

The specific implementation manners of the array substrate and the display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

The thickness and shape of each layer of film in the drawings do not reflect the true proportion of the array substrate, but are only intended to schematically illustrate the content of the present invention.

The embodiment of the present invention provides an array substrate, as shown in FIG. 2a to FIG. 2c, including a base substrate 201, a thin film transistor thin film transistor 202 located on the base substrate 201, and an electrode structure 203 located on the thin film transistor 202 , the electrode structure 203 includes a pixel electrode 2031 and a common electrode 2032 insulated from each other, and further includes:

The black matrix 204 located above the thin film transistor 202 and on the base substrate 201 covers the black matrix 202 of the thin film transistor 202;

The black matrix 204 is electrically connected to the common electrode 2032 for providing a common electrode signal to the common electrode 2032 .

Specifically, the above-mentioned array substrate provided by the embodiments of the present utility model can be applied to liquid crystal displays such as In-Plane Switch (IPS, In-Plane Switch) and Advanced Super Dimension Switch (ADS, Advanced Super Dimension Switch) that can realize wide viewing angles. , is not limited here. The following descriptions are all taken as an example for an ADS type liquid crystal display panel.

In the above-mentioned array substrate provided by the embodiment of the present invention, the black matrix is electrically connected to the common electrode, and is used to provide the common electrode signal to the common electrode. Due to the use of the black matrix to multiplex the function of the common electrode line, it is electrically connected to the common electrode to provide a common electrode signal, compared with the prior art where the common electrode line on the same layer as the gate is separately provided, the opening of each sub-pixel unit can be reduced Occupancy of the area increases the aperture ratio of the array substrate. Moreover, since the black matrix used as the common electrode line is arranged above the thin film transistor, the film layers through which the black matrix needs to be connected to the common electrode can be reduced, and the difficulty of the manufacturing process is also reduced.

In specific implementation, the thin-film transistors in the above-mentioned array substrate provided by the embodiment of the present invention can adopt a bottom-gate structure, as shown in FIG. 2a to FIG. Insulating layer 2022, active layer 2023, source 2024, and drain 2025. Of course, the thin film transistor 202 in the array substrate may also adopt other structures in actual implementation, which is not limited here.

The above-mentioned array substrate provided by the embodiment of the present invention will be described below by taking a thin-film transistor with a bottom-gate structure as an example.

Preferably, in the above-mentioned array substrate provided by the embodiment of the present utility model, as shown in FIG. 2a to FIG. No other film layers are set between the matrix 204 and the common electrode 2032. Compared with the common electrode line and the grid in the same layer in the prior art, the common electrode needs to be connected to the common electrode line through the via holes penetrating multiple film layers, which can avoid The arrangement of via holes reduces the difficulty of the manufacturing process.

In specific implementation, in the above array substrate provided by the embodiment of the present invention, as shown in Figure 2a to Figure 2c, the black matrix 204 directly electrically connected to the common electrode 2032 can be directly arranged between the film layers of the common electrode 2032 Of course, the black matrix 204 can also be directly disposed under the film layer of the common electrode 2032 , which is not limited here.

Preferably, as shown in FIG. 2a to FIG. 2c, in the array substrate provided by the embodiment of the present invention, when the structure in which the black matrix 204 is directly located on the common electrode 2032 is adopted, the common electrode 2032 and the black The matrix 204 is made by a single patterning process, that is, a gray tone mask or a halftone mask is used to prepare the graphics of the two film layers at the same time, so that compared with the prior art, 10 Masks are required for patterning, which can reduce the number of Masks. The number of times of use, thereby improving the manufacturing efficiency of the product and reducing the production cost.

Specifically, in the above-mentioned array substrate provided by the embodiment of the present invention, in order to ensure that the black matrix not only has the opacity to protect the thin film transistor from light, but also has the conductivity to transmit the common electrode signal, metal materials or opaque The organic conductive material is used as the material of the black matrix.

Specifically, in the above-mentioned array substrate provided by the embodiment of the present utility model, as shown in FIG. An insulating layer 206, and a color filter 205 is arranged on the first insulating layer 206. The color filter 205 is generally composed of three primary colors (red, green, blue) cross-arranged monochromatic filters. And a second insulating layer 207 is provided between the pixel electrode 2031 and the common electrode 2032 .

Further, in the above-mentioned array substrate provided by the embodiment of the present invention, as shown in FIG. 2b, the first insulating layer 206 in the structure shown in FIG. 2a can also be omitted between the thin film transistor 202 and the electrode structure 203, and the The color filter 205 multiplexes the function of the insulating layer, that is, the color filter 205 as an insulating layer is directly arranged between the thin film transistor 202 and the electrode structure 203. Similarly, the color filter 205 is generally composed of three primary colors (red, green, etc.) , blue) composed of cross-arranged monochromatic filters. Compared with the structure shown in Figure 2a, using the function of multiplexing the insulating layer of the color filter can save an additional insulating layer between the source drain and the pixel electrode, so that a Mask can be reduced during preparation. Composition, to further improve the manufacturing efficiency of products and reduce production costs.

Or, further, in the above-mentioned array substrate provided by the embodiment of the present utility model, as shown in FIG. 2c, a color filter 205 can also be used between the pixel electrode 2031 and the common electrode 2032 instead of the color filter 205 in the structure shown in FIG. 2a. The second insulating layer 207, the color filter 205 is used as an insulating layer, that is, the color filter 205 as an insulating layer is arranged between the pixel electrode 2031 and the common electrode 2032. Similarly, the color filter 205 is generally composed of It consists of three primary colors (red, green, blue) cross-arranged monochromatic filters. Compared with the structure shown in Figure 2a, the color filter is used to reuse the function of the insulating layer between the pixel electrode and the common electrode, and an additional insulating layer is omitted. In this way, one mask can be reduced for patterning during preparation. Further improve the manufacturing efficiency of the product and reduce the production cost.

Based on the same concept of the utility model, the embodiment of the utility model also provides a display device, including the above-mentioned array substrate provided by the embodiment of the utility model, the display device can be: a mobile phone, a tablet computer, a TV, a monitor, a notebook computer, Any product or component with display function, such as digital photo frame and navigator. For the implementation of the display device, reference may be made to the above-mentioned embodiments of the array substrate, and repeated descriptions will not be repeated.

Based on the same concept of the utility model, the embodiment of the utility model also provides a method for preparing an array substrate, which specifically includes the following steps:

A step of forming a thin film transistor on a base substrate;

A step of forming an electrode structure; the electrode structure includes mutually insulated pixel electrodes and common electrodes;

The step of forming a black matrix; the orthographic projection of the black matrix on the base substrate covers the thin film transistor; and the black matrix is directly electrically connected with the common electrode, and is used to provide the common electrode signal to the common electrode.

Specifically, during specific implementation, the black matrix can be located above the common electrode, that is, the common electrode is formed first and then the black matrix is formed, and of course the common electrode can also be located above the black matrix, that is, the common electrode is formed after the black matrix is formed first, It is not limited here.

Specifically, when the black moment is located above the common electrode, the method for preparing the array substrate provided by the embodiment of the present invention, as shown in FIG. 3 , may specifically include the following steps:

Step S101, forming a thin film transistor on a base substrate;

Step S102, forming a pixel electrode on the thin film transistor;

Step S103, forming a common electrode insulated from the pixel electrode on the pixel electrode;

Step S104, forming a black matrix on the common electrode; the orthographic projection of the black matrix on the base substrate covers the thin film transistor; and the black matrix is directly electrically connected to the common electrode for providing common electrode signals to the common electrode.

In specific implementation, the above step S103 forms a common electrode insulated from the pixel electrode on the pixel electrode and step S104 forms a black matrix on the common electrode, which can be realized by using a Mask, that is, the common electrode and the black matrix can be formed through a single patterning process Compared with the existing technology, the number of times of using the Mask can be reduced, the manufacturing efficiency of the product can be improved, and the production cost can be reduced.

Specifically, forming the common electrode and black matrix patterns through a patterning process can be achieved in the following manner:

First, the film of the common electrode 2032 and the film of the black matrix 204 are sequentially formed, as shown in FIG. 4a;

Then, coat a photoresist 208 on the film of the black matrix, and use a mask to expose and develop the photoresist 208, as shown in FIG. The photoresist completely reserves the region c; in specific implementation, the mask can be a halftone mask or a gray tone mask;

Wherein, the photoresist partially reserved area b corresponds to the pattern area where the common electrode 2032 is formed, and the photoresist completely reserved area c corresponds to the pattern area where the black matrix 204 is formed;

Finally, the photoresist completely removed region a, the photoresist partially retained region b and the photoresist completely retained region c are etched to form the patterns of the common electrode 2032 and the black matrix 204 .

Wherein, the photoresist completely removed region a, the photoresist partially reserved region b and the photoresist completely reserved region c are etched to form the pattern of the common electrode 2032 and the black matrix 204, specifically through the following methods:

First, the thin film of the common electrode 2032 and the thin film of the black matrix 204 in the photoresist completely removed region a are removed by an etching process to obtain the pattern of the common electrode 2032, as shown in FIG. 4c;

Then, ashing the photoresist 208 to remove the photoresist 208 in the photoresist part reserved region b, as shown in FIG. 4d;

Next, use an etching process to remove the film of the black matrix 204 in the partially reserved region b of the photoresist, as shown in FIG. 4e;

Finally, the photoresist 208 in the region c where the photoresist is completely reserved is peeled off to obtain the pattern of the black matrix 204, as shown in FIG. 4f.

Preferably, in actual implementation, in order to ensure that the black matrix has both opacity for light-shielding protection of the thin film transistor and conductivity for transmitting common electrode signals, a metal material or an opaque organic conductive material can be used as the black matrix s material.

Further, before the step S102 of forming the pixel electrode on the thin film transistor, a color filter as an insulating layer is first formed on the thin film transistor, and the color filter is generally composed of a single cross-arrangement of three primary colors (red, green, blue). Composition of color filters. Compared with the preparation method of the existing structure, the use of the function of multiplexing the insulating layer of the color filter can save an additional insulating layer between the source drain and the pixel electrode, so that one mask can be reduced for patterning during preparation , to further improve the manufacturing efficiency of the product and reduce the production cost.

Or, further, before the step S103 of forming a common electrode insulated from the pixel electrode on the pixel electrode, a color filter as an insulating layer is first formed on the pixel electrode, and the color filter is generally composed of three primary colors (red, green , blue) composed of cross-arranged monochromatic filters. Compared with the preparation method of the existing structure, the use of the function of the color filter to reuse the insulating layer can save an additional insulating layer between the pixel electrode and the common electrode, so that one mask can be reduced for patterning during preparation, and further Improve product manufacturing efficiency and reduce production costs.

An array substrate and a display device provided by an embodiment of the present invention, the array substrate includes a thin film transistor thin film transistor located on the base substrate, and an electrode structure located on the thin film transistor, the electrode structure includes mutually insulated pixel electrodes and common electrodes , further comprising: a black matrix located above the thin film transistor and covering the thin film transistor in an orthographic projection on the base substrate; the black matrix is electrically connected to the common electrode, and is used to provide a common electrode signal to the common electrode. Due to the use of the black matrix to multiplex the function of the common electrode line, it is electrically connected to the common electrode to provide a common electrode signal, compared with the prior art where the common electrode line on the same layer as the gate is separately provided, the opening of each sub-pixel unit can be reduced Occupancy of the area increases the aperture ratio of the array substrate. Moreover, since the black matrix used as the common electrode line is arranged above the thin film transistor, the film layers through which the black matrix needs to be connected to the common electrode can be reduced, and the difficulty of the manufacturing process is also reduced.

Obviously, those skilled in the art can make various changes and modifications to the utility model without departing from the spirit and scope of the utility model. In this way, if these modifications and variations of the utility model fall within the scope of the claims of the utility model and equivalent technologies thereof, the utility model is also intended to include these modifications and variations.

Claims (7)

1. an array base palte, comprise underlay substrate, is positioned at the thin film transistor (TFT) on described underlay substrate, and be positioned at the electrode structure on described thin film transistor (TFT), and described electrode structure comprises pixel electrode and the public electrode of mutually insulated, it is characterized in that, also comprises:

Be positioned at the black matrix that described thin film transistor (TFT) top and the orthogonal projection on described underlay substrate cover described thin film transistor (TFT);

Described black matrix and described public electrode are electrical connected, and being used for provides common electrode signal to described public electrode.

2. array base palte as claimed in claim 1, is characterized in that, described black matrix and described public electrode directly are electrical connected.

3. array base palte as claimed in claim 2, is characterized in that, described black matrix is located immediately on described public electrode.

4., as the described array base palte of claim 1-3 any one, it is characterized in that, described black matrix is metal material or opaque organic conductive material.

5. array base palte as claimed in claim 1, is characterized in that, also comprises: between described thin film transistor (TFT) and described electrode unit and as the colored filter of insulation course.

6. array base palte as claimed in claim 1, is characterized in that, also comprises; Between described pixel electrode and described public electrode and as the colored filter of insulation course.

7. a display device, is characterized in that, comprises as the described array base palte of claim 1-6 any one.

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