CN203206179U - Low-noise bias circuit of voltage controlled oscillator - Google Patents
Low-noise bias circuit of voltage controlled oscillator Download PDFInfo
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- CN203206179U CN203206179U CN 201320231971 CN201320231971U CN203206179U CN 203206179 U CN203206179 U CN 203206179U CN 201320231971 CN201320231971 CN 201320231971 CN 201320231971 U CN201320231971 U CN 201320231971U CN 203206179 U CN203206179 U CN 203206179U
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- bipolar junction
- bjt1
- controlled oscillator
- junction transistor
- bjt2
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- CFMYXEVWODSLAX-QOZOJKKESA-N tetrodotoxin Chemical compound O([C@@]([C@H]1O)(O)O[C@H]2[C@@]3(O)CO)[C@H]3[C@@H](O)[C@]11[C@H]2[C@@H](O)N=C(N)N1 CFMYXEVWODSLAX-QOZOJKKESA-N 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 15
- 238000001914 filtration Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The utility model discloses a low-noise bias circuit of a voltage controlled oscillator. The low-noise bias circuit of the voltage controlled oscillator is composed of a constant voltage source, a shunt circuit and a filtering capacitor C1. The shunt circuit includes a resistor R1, a first bipolar junction-type transistor BJT1 and a second bipolar junction-type transistor BJT2 sequentially connected together. The R1 is connected with a collector electrode of the BJT1. An emitting electrode of the BJT1 is connected with the collector electrode of the BJT2. The collector electrode of the BJT1 is connected with a base electrode of the BJT1. The collector electrode of the BJT2 is connected with a base electrode of the BJT2. A first shunt output branch circuit is connected between the R1 and the BJT1 in parallel. A second shunt output branch circuit is connected between the emitting electrode of the BJT1 and the base electrode of the BJT2 in parallel. According to the utility model, by adopting a serial structure composed of the bipolar junction-type transistors with the base electrodes being in short connection with the collector electrodes and a high-value poly resistor as a shunt unit, the low-noise bias circuit of the voltage controlled oscillator is comparatively low in output noise compared with a traditional bias circuit employing resistors connected in series for shunting. And a filtering capacitor is not needed to add in the external and the small capacitor only needs to be added in the low-noise bias circuit of the voltage controlled oscillator, so that the number of pins of a chip can be reduced effectively and the cost is reduced.
Description
Technical field
The utility model relates to a kind of low-noise voltage-controlled oscillator biasing circuit.
Background technology
As shown in Figure 1, traditional biasing circuit is generally finished dividing potential drop by resistance, but owing to the noise of the bleeder circuit that is comprised of series resistance R4, R5 is relatively large, need to carry out filtering at the outside large electric capacity (capacitor C 4 among Fig. 1) that increases of biasing circuit, the output pin that this has increased biasing circuit has increased circuit cost.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of Novel low noise voltage controlled oscillator biasing circuit is provided, adopt BJT pipe and the height of base stage and collector electrode short circuit to be worth poly resistance as partial pressure unit, the biasing circuit output noise is less, and needn't externally add filter capacitor, only need to add little electric capacity in biasing circuit inside and get final product, can effectively reduce the pin of chip, reduce cost.
The purpose of this utility model is achieved through the following technical solutions: the low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with voltage controlled oscillator, for the voltage controlled oscillator in the frequency source circuit provides biasing, it is by constant voltage source, bleeder circuit and filter capacitor C1 form, described bleeder circuit comprises the successively resistance R 1 of series connection, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, and the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined;
The first dividing potential drop output branch road in parallel between the base stage of resistance R 1 and the first bipolar junction transistor BJT1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2; After exporting branch road and the second dividing potential drop is exported branch circuit parallel connection, the first dividing potential drop is connected in series with filter capacitor C1.
Further, described resistance R 1 is high value poly resistance.
Further, be respectively equipped with switch on described the first dividing potential drop output branch road and the second dividing potential drop output branch road.
The emitter of the second bipolar junction transistor BJT2 and filter capacitor C1 be ground connection respectively.
The beneficial effects of the utility model are:
The structure that the BJT pipe of employing base stage and collector electrode short circuit is connected with high value poly resistance is as partial pressure unit, compare with traditional biasing circuit that carries out dividing potential drop by the resistance series connection, the biasing circuit output noise is less, and needn't externally add filter capacitor, only needing to add little electric capacity in biasing circuit inside gets final product, can effectively reduce the pin of chip, reduce cost.
Description of drawings
Fig. 1 is traditional bias circuit construction schematic diagram;
Fig. 2 is the utility model bias circuit construction schematic diagram;
Fig. 3 is the utility model biasing circuit and traditional resistor biasing circuit of divided voltage output voltage noise curve comparison diagram.
Embodiment
Below in conjunction with accompanying drawing the technical solution of the utility model is described in further detail, but protection range of the present utility model is not limited to the following stated.
As shown in Figure 2, the low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with the LC voltage controlled oscillator, for the LC voltage controlled oscillator in the frequency source circuit provides the voltage bias point, it is comprised of constant voltage source LDO_VDD, bleeder circuit and filter capacitor C1, described bleeder circuit comprises high value poly resistance R 1, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2 of successively series connection, and high value poly resistance R 1 is carried out dividing potential drop with the bleeder circuit that the BJT pipe is composed in series to the voltage that LDO exports.High value poly resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, and the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined;
The first dividing potential drop output branch road in parallel between the base stage of high value poly resistance R 1 and the first bipolar junction transistor BJT1, the first dividing potential drop output branch road output voltage point DC1, the first dividing potential drop is exported branch road and is provided with K switch G1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, the second dividing potential drop output branch road output voltage point DC2, the second dividing potential drop is exported branch road and is provided with K switch G2.Control by K switch G1 and KG2 is the voltage DC of output bias circuit optionally, and the selection of electrical voltage point DC1 and electrical voltage point DC2 is mainly interval based on the linear change of the capacitance of variable capacitance.
After exporting branch road and the second dividing potential drop is exported branch circuit parallel connection, the first dividing potential drop is connected in series with filter capacitor C1.
The emitter of the second bipolar junction transistor BJT2 and filter capacitor C1 be ground connection respectively.
As seen in Figure 3: under same LDO output voltage condition, the output voltage noise of biasing circuit that the utility model adopts (about-17dB) is starkly lower than the output voltage noise (about-15dB) of traditional employing electric resistance partial pressure configuration biases circuit.
Claims (4)
1. low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with voltage controlled oscillator, for the voltage controlled oscillator in the frequency source circuit provides biasing, it is characterized in that: it is by constant voltage source, bleeder circuit and filter capacitor C1 form, described bleeder circuit comprises the successively resistance R 1 of series connection, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, and the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined;
The first dividing potential drop output branch road in parallel between the base stage of resistance R 1 and the first bipolar junction transistor BJT1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2; After exporting branch road and the second dividing potential drop is exported branch circuit parallel connection, the first dividing potential drop is connected in series with filter capacitor C1.
2. low-noise voltage-controlled oscillator biasing circuit according to claim 1 is characterized in that: described resistance R 1 is high value poly resistance.
3. low-noise voltage-controlled oscillator biasing circuit according to claim 1 is characterized in that: be respectively equipped with switch on described the first dividing potential drop output branch road and the second dividing potential drop output branch road.
4. low-noise voltage-controlled oscillator biasing circuit according to claim 1 is characterized in that: the emitter of described the second bipolar junction transistor BJT2 and filter capacitor C1 difference ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320231971 CN203206179U (en) | 2013-05-02 | 2013-05-02 | Low-noise bias circuit of voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320231971 CN203206179U (en) | 2013-05-02 | 2013-05-02 | Low-noise bias circuit of voltage controlled oscillator |
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| Publication Number | Publication Date |
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| CN203206179U true CN203206179U (en) | 2013-09-18 |
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| CN 201320231971 Expired - Fee Related CN203206179U (en) | 2013-05-02 | 2013-05-02 | Low-noise bias circuit of voltage controlled oscillator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104135233A (en) * | 2013-05-02 | 2014-11-05 | 成都国腾电子技术股份有限公司 | Low-noise voltage-controlled oscillator biasing circuit and frequency source self-calibration method |
| US9780725B2 (en) | 2015-08-21 | 2017-10-03 | International Business Machines Corporation | Improving oscillator phase noise using active device stacking |
| US9831830B2 (en) | 2015-08-21 | 2017-11-28 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
-
2013
- 2013-05-02 CN CN 201320231971 patent/CN203206179U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104135233A (en) * | 2013-05-02 | 2014-11-05 | 成都国腾电子技术股份有限公司 | Low-noise voltage-controlled oscillator biasing circuit and frequency source self-calibration method |
| CN104135233B (en) * | 2013-05-02 | 2017-05-10 | 成都振芯科技股份有限公司 | Low-noise voltage-controlled oscillator biasing circuit and frequency source self-calibration method |
| US9780725B2 (en) | 2015-08-21 | 2017-10-03 | International Business Machines Corporation | Improving oscillator phase noise using active device stacking |
| US9831830B2 (en) | 2015-08-21 | 2017-11-28 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
| US10171031B2 (en) | 2015-08-21 | 2019-01-01 | International Business Machines Corporation | Oscillator phase noise using active device stacking |
| US10236825B2 (en) | 2015-08-21 | 2019-03-19 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: CHENGDU ZHENXIN TECHNOLOGY CO., LTD. Free format text: FORMER NAME: CHENGDU ARTEC ELECTRONICS CORP. |
|
| CP03 | Change of name, title or address |
Address after: No. 1 high tech Zone Gaopeng road in Chengdu city of Sichuan Province in 610000 Patentee after: CHENGDU CORPRO TECHNOLOGY CO., LTD. Address before: No. 1 high tech Zone Gaopeng road in Chengdu city of Sichuan Province in 610041 Patentee before: Chengdu ARTEC Electronics Corp. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20190502 |