[go: up one dir, main page]

CN203055466U - Shift register unit, shift register, array substrate and display device - Google Patents

Shift register unit, shift register, array substrate and display device Download PDF

Info

Publication number
CN203055466U
CN203055466U CN 201320060333 CN201320060333U CN203055466U CN 203055466 U CN203055466 U CN 203055466U CN 201320060333 CN201320060333 CN 201320060333 CN 201320060333 U CN201320060333 U CN 201320060333U CN 203055466 U CN203055466 U CN 203055466U
Authority
CN
China
Prior art keywords
shift register
switching tube
clock signal
signal
register cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201320060333
Other languages
Chinese (zh)
Inventor
王颖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN 201320060333 priority Critical patent/CN203055466U/en
Application granted granted Critical
Publication of CN203055466U publication Critical patent/CN203055466U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal Display Device Control (AREA)
  • Shift Register Type Memory (AREA)

Abstract

The embodiment of the utility model discloses a shifting register unit, a shifting register, an array substrate and a display device, relates to the field of displays and can independently reset all the shifting register units. The shifting register unit comprises a sampling part, an outputting part and a resetting part, wherein the sampling part comprises a first switching tube and a second switching tube; the outputting part comprises a fifth switching tube, a sixth switching tube, a first capacitor and a second capacitor; and the resetting part comprises a third switching tube and a fourth switching tube.

Description

移位寄存器单元、移位寄存器、阵列基板和显示装置Shift register unit, shift register, array substrate and display device

技术领域technical field

本实用新型涉及显示器领域,尤其涉及一种移位寄存器单元、移位寄存器、阵列基板和显示装置。The utility model relates to the field of displays, in particular to a shift register unit, a shift register, an array substrate and a display device.

背景技术Background technique

随着显示技术的不断发展,采用薄膜晶体管的有源阵列显示器已成为最为常见的平板显示装置,其栅极驱动电路通常以移位寄存器的方式实现,移位寄存器由多个级联的移位寄存器单元组成,各个移位寄存器单元依次输出信号,以实现栅极的逐行驱动。With the continuous development of display technology, active matrix displays using thin film transistors have become the most common flat panel display devices, and their gate drive circuits are usually implemented in the form of shift registers, which are composed of multiple The shift register units are composed of register units, and each shift register unit outputs signals in sequence to realize the progressive driving of the gate.

现有的移位寄存器单元包括采样、输出、复位三个工作状态。在相邻的两个移位寄存器单元中,后一个移位寄存器单元的输出信号作为前一个移位寄存器单元的复位信号,以使前一个移位寄存器单元停止输出。但是,如果前一个移位寄存器单元没有接收到来自后一个移位寄存器单元的复位信号,前一个移位寄存器单元就不会停止输出。因此,现有技术中前一个移位寄存器单元的复位是由后一个移位寄存器单元来控制的,则若来自后一个移位寄存器单元的复位信号无法顺利或延迟反馈给前一个移位寄存器单元,则前一个移位寄存器单元就不会按照预定的时间停止输出,则可能导致整个阵列基板甚至液晶显示器的无法正常工作。故而,需要解决这个移位寄存器单元无法独立复位的问题。The existing shift register unit includes three working states of sampling, output and reset. In two adjacent shift register units, the output signal of the latter shift register unit is used as the reset signal of the former shift register unit, so that the former shift register unit stops outputting. However, if the previous shift register unit does not receive the reset signal from the latter shift register unit, the previous shift register unit will not stop outputting. Therefore, in the prior art, the reset of the previous shift register unit is controlled by the latter shift register unit, if the reset signal from the latter shift register unit cannot be fed back smoothly or delayed to the previous shift register unit , the previous shift register unit will not stop outputting according to the predetermined time, which may cause the failure of the entire array substrate and even the liquid crystal display. Therefore, it is necessary to solve the problem that the shift register unit cannot be reset independently.

实用新型内容Utility model content

本实用新型所要解决的技术问题在于提供一种移位寄存器单元、移位寄存器、阵列基板和显示装置,使得各移位寄存器单元能够独立复位。The technical problem to be solved by the utility model is to provide a shift register unit, a shift register, an array substrate and a display device, so that each shift register unit can be reset independently.

为解决上述技术问题,本实用新型采用如下技术方案:In order to solve the above technical problems, the utility model adopts the following technical solutions:

本实用新型第一方面提供了一种移位寄存器单元,包括:The first aspect of the utility model provides a shift register unit, including:

采样部分、输出部分和复位部分,Sampling section, output section and reset section,

其中,所述采样部分包括第一开关管和第二开关管,所述输出部分包括第五开关管、第六开关管、第一电容和第二电容,所述复位部分包括第三开关管、第四开关管;Wherein, the sampling part includes a first switch tube and a second switch tube, the output part includes a fifth switch tube, a sixth switch tube, a first capacitor and a second capacitor, and the reset part includes a third switch tube, The fourth switch tube;

所述第一开关管的源极连接所述移位寄存器单元的输入端,接收来自所述输入端的输入信号,所述第一开关管的栅极连接第一时钟信号;所述第二开关管的栅极和源极连接第二时钟信号,所述第二时钟信号与所述第一时钟信号反相;所述第三开关管的栅极和源极连接所述第一时钟信号;所述第四开关管的栅极连接所述第二时钟信号,所述第四开关管的源极连接电源输入信号;所述第五开关管的源极连接所述第二时钟信号,所述第五开关管的栅极连接所述第一开关管和所述第二开关管的漏极,所述第五开关管的漏极连接所述移位寄存器单元的输出端;所述第六开关管的栅极连接所述第三开关管和所述第四开关管的漏极,所述第六开关管的源极连接所述电源输入信号,所述第六开关管的漏极连接所述移位寄存器单元的输出端;所述第一电容的一端连接所述第五开关管的栅极,另一端连接所述移位寄存器单元的输出端;所述第二电容的一端连接所述第六开关管的栅极,另一端连接所述电源输入信号。The source of the first switch tube is connected to the input terminal of the shift register unit to receive the input signal from the input terminal, the gate of the first switch tube is connected to the first clock signal; the second switch tube The gate and source of the third switching tube are connected to the second clock signal, and the second clock signal is inverse phase to the first clock signal; the gate and source of the third switching transistor are connected to the first clock signal; The gate of the fourth switching tube is connected to the second clock signal, the source of the fourth switching tube is connected to the power input signal; the source of the fifth switching tube is connected to the second clock signal, and the fifth switching tube is connected to the second clock signal. The gate of the switch tube is connected to the drains of the first switch tube and the second switch tube, the drain of the fifth switch tube is connected to the output end of the shift register unit; the sixth switch tube The gate is connected to the drains of the third switching tube and the fourth switching tube, the source of the sixth switching tube is connected to the power input signal, and the drain of the sixth switching tube is connected to the shift The output end of the register unit; one end of the first capacitor is connected to the gate of the fifth switch tube, and the other end is connected to the output end of the shift register unit; one end of the second capacitor is connected to the sixth switch The grid of the tube, and the other end is connected to the power input signal.

所述第一至第六开关管均为MOS管或薄膜晶体管。The first to sixth switching transistors are all MOS transistors or thin film transistors.

所述薄膜晶体管为P型薄膜晶体管或为N型薄膜晶体管。The thin film transistor is a P-type thin film transistor or an N-type thin film transistor.

当所述第一至第六开关管均为P型薄膜晶体管时,所述电源输入信号为高电平;When the first to sixth switch tubes are all P-type thin film transistors, the power input signal is at a high level;

在第一时间段内,所述输入信号为低电平,所述第一时钟信号为低电平,所述第二时钟信号为高电平,则所述移位寄存器单元的输出信号为高电平;In the first time period, the input signal is low level, the first clock signal is low level, and the second clock signal is high level, then the output signal of the shift register unit is high level;

在第二时间段内,所述输入信号为高电平,所述第一时钟信号为高电平,所述第二时钟信号为低电平,则所述移位寄存器单元的输出信号为低电平;In the second time period, the input signal is high level, the first clock signal is high level, and the second clock signal is low level, then the output signal of the shift register unit is low level;

在第三时间段内,所述输入信号为高电平,所述第一时钟信号为低电平,所述第二时钟信号为高电平,则所述移位寄存器单元的输出信号为高电平。In the third time period, the input signal is at high level, the first clock signal is at low level, and the second clock signal is at high level, then the output signal of the shift register unit is at high level level.

当所述第一至第六开关管均为N型薄膜晶体管时,所述电源输入信号为低电平;When the first to sixth switch tubes are all N-type thin film transistors, the power input signal is at a low level;

在第一时间段内,所述输入信号为高电平,所述第一时钟信号为高电平,所述第二时钟信号为低电平,则所述移位寄存器单元的输出信号为低电平;In the first time period, the input signal is high level, the first clock signal is high level, and the second clock signal is low level, then the output signal of the shift register unit is low level;

在第二时间段内,所述输入信号为低电平,所述第一时钟信号为低电平,所述第二时钟信号为高电平,则所述移位寄存器单元的输出信号为高电平;In the second time period, the input signal is low level, the first clock signal is low level, and the second clock signal is high level, then the output signal of the shift register unit is high level;

在第三时间段内,所述输入信号为低电平,所述第一时钟信号为高电平,During the third time period, the input signal is at low level, and the first clock signal is at high level,

所述第二时钟信号为低电平,则所述移位寄存器单元的输出信号为低电平。When the second clock signal is at low level, the output signal of the shift register unit is at low level.

本实用新型第二方面提供了一种移位寄存器,包括n个级联的上述移位寄存器单元,所述n为大于1的整数,其中,第1个所述移位寄存器单元的输入端连接至所述移位寄存器的信号输入端,第n个所述移位寄存器单元的输出端连接至所述移位寄存器的信号输出端。The second aspect of the utility model provides a shift register, including n cascaded above-mentioned shift register units, where n is an integer greater than 1, wherein the input end of the first shift register unit is connected to To the signal input end of the shift register, the output end of the nth shift register unit is connected to the signal output end of the shift register.

本实用新型第三方面提供了一种阵列基板,包括上述移位寄存器。The third aspect of the present invention provides an array substrate, including the above-mentioned shift register.

本实用新型第四方面提供了一种液晶显示器,包括上述阵列基板。The fourth aspect of the utility model provides a liquid crystal display, including the above-mentioned array substrate.

在本实用新型的实施例中,该移位寄存器单元的结构使得该移位寄存器单元在接收输入信号后,可以输出相应的输出信号,并在输出输出信号后,自行复位,无需在等待到下一移位寄存器单元的输出信号作为复位信号之后,再根据复位信号进行复位。保证了移位寄存器单元的正常工作,进而保证了整个阵列基板甚至液晶显示器的正常工作。In the embodiment of the utility model, the structure of the shift register unit is such that the shift register unit can output the corresponding output signal after receiving the input signal, and reset itself after outputting the output signal without waiting until the next After the output signal of a shift register unit is used as a reset signal, the reset is performed according to the reset signal. This ensures the normal operation of the shift register unit, thereby ensuring the normal operation of the entire array substrate and even the liquid crystal display.

附图说明Description of drawings

为了更清楚地说明本实用新型实施例或现有技术中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only the present invention For some novel embodiments, those of ordinary skill in the art can also obtain other drawings based on these drawings without any creative work.

图1为本实用新型实施例中的移位寄存器单元的结构示意图;Fig. 1 is the structural representation of the shift register unit in the utility model embodiment;

图2为本实用新型实施例中的P型薄膜晶体管的移位寄存器单元的结构示意图;FIG. 2 is a schematic structural diagram of a shift register unit of a P-type thin film transistor in an embodiment of the present invention;

图3为本实用新型实施例中的P型薄膜晶体管的移位寄存器单元的时序图;3 is a timing diagram of a shift register unit of a P-type thin film transistor in an embodiment of the present invention;

图4为本实用新型实施例中的N型薄膜晶体管的移位寄存器单元的结构示意图;4 is a schematic structural diagram of a shift register unit of an N-type thin film transistor in an embodiment of the present invention;

图5为本实用新型实施例中的N型薄膜晶体管的移位寄存器单元的时序图。FIG. 5 is a timing diagram of a shift register unit of an N-type thin film transistor in an embodiment of the present invention.

具体实施方式Detailed ways

下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. . Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

本实用新型实施例的第一方面提供了一种移位寄存器单元,为了方便对该移位寄存器单元的描述,如图1所示,所述移位寄存器单元包括:The first aspect of the embodiment of the present invention provides a shift register unit. In order to facilitate the description of the shift register unit, as shown in FIG. 1, the shift register unit includes:

其中,所述采样部分包括第一开关管T1和第二开关管T2,所述输出部分包括第五开关管T5、第六开关管T6、第一电容C1和第二电容C2,所述复位部分包括第三开关管T3、第四开关管T4;Wherein, the sampling part includes a first switch tube T1 and a second switch tube T2, the output part includes a fifth switch tube T5, a sixth switch tube T6, a first capacitor C1 and a second capacitor C2, and the reset part Including the third switching tube T3 and the fourth switching tube T4;

具体的,所述第一开关管T1的源极连接所述移位寄存器单元的输入端,接收来自所述输入端的输入信号IN,所述第一开关管T1的栅极连接第一时钟信号CK;所述第二开关管T2的栅极和源极连接第二时钟信号CKB,所述第二时钟信号CKB与所述第一时钟信号CK反相;所述第三开关管T3的栅极和源极连接所述第一时钟信号CK;所述第四开关管T4的栅极连接所述第二时钟信号CKB,所述第四开关管T4的源极连接电源输入信号V;所述第五开关管T5的源极连接所述第二时钟信号CKB,所述第五开关管T5的栅极连接所述第一开关管T1和所述第二开关管T2的漏极,所述第五开关管T5的漏极连接所述移位寄存器单元的输出端;所述第六开关管T6的栅极连接所述第三开关管T3和所述第四开关管T4的漏极,所述第六开关管T6的源极连接所述电源输入信号V,所述第六开关管T6的漏极连接所述移位寄存器单元的输出端;所述第一电容C1的一端连接所述第五开关管T5的栅极,另一端连接所述移位寄存器单元的输出端;所述第二电容C2的一端连接所述第六开关管T6的栅极,另一端连接所述电源输入信号V。Specifically, the source of the first switching transistor T1 is connected to the input terminal of the shift register unit to receive the input signal IN from the input terminal, and the gate of the first switching transistor T1 is connected to the first clock signal CK. ; The gate and source of the second switching transistor T2 are connected to the second clock signal CKB, and the second clock signal CKB is inverse to the first clock signal CK; the gate and the source of the third switching transistor T3 The source is connected to the first clock signal CK; the gate of the fourth switching transistor T4 is connected to the second clock signal CKB, and the source of the fourth switching transistor T4 is connected to the power input signal V; the fifth The source of the switching transistor T5 is connected to the second clock signal CKB, the gate of the fifth switching transistor T5 is connected to the drains of the first switching transistor T1 and the second switching transistor T2, and the fifth switching transistor T5 The drain of the transistor T5 is connected to the output terminal of the shift register unit; the gate of the sixth switching transistor T6 is connected to the drains of the third switching transistor T3 and the fourth switching transistor T4, and the sixth switching transistor T6 is connected to the drain of the fourth switching transistor T4. The source of the switch tube T6 is connected to the power input signal V, the drain of the sixth switch tube T6 is connected to the output terminal of the shift register unit; one end of the first capacitor C1 is connected to the fifth switch tube The other end of the gate of T5 is connected to the output end of the shift register unit; one end of the second capacitor C2 is connected to the gate of the sixth switching transistor T6, and the other end is connected to the power input signal V.

在本实施例的技术方案中,该移位寄存器单元的结构使得该移位寄存器单元在接收输入信号后,可以输出相应的输出信号,并在输出输出信号后,自行复位,无需在等待到下一移位寄存器单元的输出信号作为复位信号之后,再根据复位信号进行复位。保证了移位寄存器单元的正常工作,进而保证了整个阵列基板甚至液晶显示器的正常工作。In the technical solution of this embodiment, the structure of the shift register unit is such that the shift register unit can output the corresponding output signal after receiving the input signal, and reset itself after outputting the output signal, without waiting until the next After the output signal of a shift register unit is used as a reset signal, the reset is performed according to the reset signal. This ensures the normal operation of the shift register unit, thereby ensuring the normal operation of the entire array substrate and even the liquid crystal display.

需要说明的是,在本实用新型实施例中,高电平均为VGH表示,低电平均为VGL表示。It should be noted that, in the embodiment of the present invention, the high level is represented by VGH, and the low level is represented by VGL.

优选的,所述第一至第六开关管均可以为MOS管或薄膜晶体管。进一步的,所述薄膜晶体管可为P型薄膜晶体管或为N型薄膜晶体管,其中,由于多晶硅薄膜晶体管的迁移率较高,尤其适用于移位寄存器单元。Preferably, the first to sixth switching transistors may all be MOS transistors or thin film transistors. Further, the thin film transistor may be a P-type thin film transistor or an N-type thin film transistor, wherein, because of the high mobility of the polysilicon thin film transistor, it is especially suitable for a shift register unit.

如图2所示,当所述第一至第六开关管均为P型薄膜晶体管时,As shown in Figure 2, when the first to sixth switching transistors are all P-type thin film transistors,

在第一时间段t1内,所述输入信号IN为低电平VGL,所述第一时钟信号CK为低电平VGL,所述第二时钟信号CKB为高电平VGH,则所述移位寄存器单元的输出信号OUT为高电平VGH;In the first time period t1, the input signal IN is at low level VGL, the first clock signal CK is at low level VGL, and the second clock signal CKB is at high level VGH, then the shift The output signal OUT of the register unit is a high level VGH;

具体的,在第一时间段t1内,所述移位寄存器单元进入采样阶段。Specifically, within the first time period t1, the shift register unit enters a sampling phase.

此时,所述输入信号IN为低电平VGL,并且,所述第一时钟信号CK为低电平VGL,使得第一、三开关管T1、T3导通;同时,由于所述第二时钟信号CKB与所述第一时钟信号CK反相,则所述第二时钟信号CKB为VGH,则第二开关管T2和第四开关管T4无法导通。所以此时N1、N2点的电平相应的被拉低到(低电平VGL+Vth(任一个薄膜晶体管的门限电压)),故而第六开关管T6导通,由于第六开关管T6的源极连接高电平VGH,漏极连接所述移位寄存器单元的输出端。则所述移位寄存器单元的输出信号OUT为高电平VGH。At this time, the input signal IN is at low level VGL, and the first clock signal CK is at low level VGL, so that the first and third switching transistors T1 and T3 are turned on; at the same time, due to the second clock The signal CKB is inverse to the first clock signal CK, then the second clock signal CKB is VGH, and the second switch T2 and the fourth switch T4 cannot be turned on. So at this time, the levels of points N1 and N2 are correspondingly pulled down to (low level VGL+Vth (threshold voltage of any thin-film transistor)), so the sixth switching tube T6 is turned on, because the sixth switching tube T6 The source is connected to the high level VGH, and the drain is connected to the output terminal of the shift register unit. Then the output signal OUT of the shift register unit is at a high level VGH.

并且由于N1点的电平为(低电平VGL+Vth),第六开关管T6的输出端输出高电平VGH,此时,位于N1点和第六开关管T6的输出端之间的第一电容C1被充电,对输入信号IN进行充电,则第一电容C1两端的电压差为(高电平VGH-低电平VGL-门限电压Vth)。And because the level of point N1 is (low level VGL+Vth), the output terminal of the sixth switching tube T6 outputs a high level VGH. A capacitor C1 is charged to charge the input signal IN, and the voltage difference across the first capacitor C1 is (high level VGH−low level VGL−threshold voltage Vth).

在第二时间段t2内,所述输入信号为高电平VGH,所述第一时钟信号CK为高电平VGH,所述第二时钟信号CKB为低电平VGL,则所述移位寄存器单元的输出信号为低电平VGL;In the second time period t2, the input signal is at high level VGH, the first clock signal CK is at high level VGH, and the second clock signal CKB is at low level VGL, then the shift register The output signal of the unit is low level VGL;

具体的,在第二时间段t2内,所述移位寄存器单元进入输出阶段。Specifically, within the second time period t2, the shift register unit enters an output stage.

此时,输入信号IN和第一时钟信号CK均为高电平VGH,使得第一开关管T1关断,由于第一电容C1的作用,N1点的电平得以保持,仍为(低电平VGL+门限电压Vth),故而T5导通,输出低电平VGL。同时,由于第二时钟信号CKB的电平为低电平VGL,故而第二、四开关管T2、T4导通,由于第四开关管T4的源极连接高电平VGH,此时N2点的电平为高电平VGH,关断了第六开关管T6。则此时,移位寄存器单元的输出信号为第五开关管T5输出的低电平VGL。At this time, both the input signal IN and the first clock signal CK are at a high level VGH, so that the first switching tube T1 is turned off, and due to the effect of the first capacitor C1, the level at point N1 is maintained and is still (low level VGL+threshold voltage Vth), so T5 is turned on and outputs low level VGL. At the same time, since the level of the second clock signal CKB is low level VGL, the second and fourth switching transistors T2 and T4 are turned on, and since the source of the fourth switching transistor T4 is connected to the high level VGH, at this time, the The level is high level VGH, and the sixth switching tube T6 is turned off. At this time, the output signal of the shift register unit is the low level VGL output by the fifth switching transistor T5.

在第三时间段t3内,所述输入信号IN为高电平VGH,所述第一时钟信号CK为低电平VGL,所述第二时钟信号CKB为高电平VGH,则所述移位寄存器单元的输出信号为高电平VGH。In the third time period t3, the input signal IN is at high level VGH, the first clock signal CK is at low level VGL, and the second clock signal CKB is at high level VGH, then the shift The output signal of the register unit is a high level VGH.

具体的,在第三时间段t3内,所述移位寄存器单元进入复位阶段。Specifically, within the third time period t3, the shift register unit enters a reset phase.

此时,第一时钟信号CK为低电平VGL,输入信号IN为高电平VGH,第一开关管T1导通,使得N1点的电平被拉高到高电平VGH,第五开关管T5被关断。同时,由于第一时钟信号CK为低电平VGL,第三开关管T3导通,N2的电位被拉低至(低电平VGL+门限电压Vth),使得第六开关管T6被导通,使得移位寄存器单元的输出信号OUT再次被拉高为高电平VGH,实现移位寄存器单元的独立复位。At this time, the first clock signal CK is at low level VGL, the input signal IN is at high level VGH, the first switching tube T1 is turned on, so that the level at point N1 is pulled up to high level VGH, and the fifth switching tube T5 is turned off. At the same time, since the first clock signal CK is at low level VGL, the third switching tube T3 is turned on, and the potential of N2 is pulled down to (low level VGL+threshold voltage Vth), so that the sixth switching tube T6 is turned on, so that The output signal OUT of the shift register unit is pulled high again to a high level VGH to realize the independent reset of the shift register unit.

另外,在该移位寄存器单元的其他阶段,第二电容C2保持了N2点处于低电平VGL,保证了第六开关管T6的导通,使得输出信号OUT始终为高电平VGH,提高了输出信号OUT的稳定性。In addition, in other stages of the shift register unit, the second capacitor C2 keeps the point N2 at a low level VGL, which ensures the conduction of the sixth switching tube T6, so that the output signal OUT is always at a high level VGH, improving the Stability of the output signal OUT.

如图4所示,当所述第一至第六开关管均为N型薄膜晶体管时,移位寄存器单元也可实现独立复位功能,此时的电源输入信号V为低电平VGL,由于N型薄膜晶体管的移位寄存器单元工作过程与P型薄膜晶体管的移位寄存器单元类似,在此不再赘述。As shown in Figure 4, when the first to sixth switch tubes are all N-type thin film transistors, the shift register unit can also realize an independent reset function. At this time, the power input signal V is a low level VGL, because the N The working process of the shift register unit of the P-type thin film transistor is similar to that of the P-type thin film transistor, and will not be repeated here.

需要说明的是,N型薄膜晶体管的移位寄存器单元的输入信号IN、第一时钟信号CK、第二时钟信号CKB和输出信号OUT均反相于P型薄膜晶体管的移位寄存器单元,具体参见图5。It should be noted that the input signal IN, the first clock signal CK, the second clock signal CKB, and the output signal OUT of the shift register unit of the N-type thin film transistor are all inverted from those of the shift register unit of the P-type thin film transistor. For details, see Figure 5.

另外,一般薄膜晶体管的源极和漏极是可以互换设置的。In addition, the source and drain of a general thin film transistor can be set interchangeably.

本实施例的第二方面提供了一种移位寄存器,包括n个级联的上述移位寄存器单元,所述n为大于1的整数,其中,第1个所述移位寄存器单元的输入端连接至所述移位寄存器的信号输入端,第n个所述移位寄存器单元的输出端连接至所述移位寄存器的信号输出端。The second aspect of this embodiment provides a shift register, including n cascaded above-mentioned shift register units, where n is an integer greater than 1, wherein the input terminal of the first shift register unit connected to the signal input end of the shift register, and the output end of the nth shift register unit is connected to the signal output end of the shift register.

由于本实用新型实施例提供的移位寄存器与上述本实用新型实施例所提供的移位寄存器单元具有相同的技术特征,所以也能产生相同的技术效果,解决相同的技术问题。Since the shift register provided by the embodiment of the utility model has the same technical features as the shift register unit provided by the above-mentioned embodiment of the utility model, it can also produce the same technical effect and solve the same technical problem.

本实施例的第三方面提供了一种阵列基板,包括上述移位寄存器。A third aspect of this embodiment provides an array substrate, including the above-mentioned shift register.

本实施例的第四方面提供了一种显示装置,包括上述阵列基板。所述液晶显示器可以为:液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。尤其是采用低温多晶硅技术的有源有机发光二极管显示器。A fourth aspect of this embodiment provides a display device, including the above-mentioned array substrate. The liquid crystal display can be any product or component with a display function, such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television set, a monitor, a notebook computer, a digital photo frame, a navigator, and the like. In particular, active organic light-emitting diode displays using low-temperature polysilicon technology.

以上所述,仅为本实用新型的具体实施方式,但本实用新型的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本实用新型揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本实用新型的保护范围之内。因此,本实用新型的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present utility model, but the scope of protection of the present utility model is not limited thereto. Anyone familiar with the technical field can easily think of changes or changes within the technical scope disclosed by the utility model Replacement should be covered within the protection scope of the present utility model. Therefore, the protection scope of the present utility model should be based on the protection scope of the claims.

Claims (8)

1. a shift register cell is characterized in that, comprising:
Sampling section, output and the part that resets,
Wherein, described sampling section comprises first switching tube and second switch pipe, and described output comprises the 5th switching tube, the 6th switching tube, first electric capacity and second electric capacity, and described reset portion branch comprises the 3rd switching tube, the 4th switching tube;
The source electrode of described first switching tube connects the input end of described shift register cell, receives the input signal from described input end, and the grid of described first switching tube connects first clock signal; The grid of described second switch pipe is connected the second clock signal with source electrode, described second clock signal and described first clock signal are anti-phase; The grid of described the 3rd switching tube is connected described first clock signal with source electrode; The grid of described the 4th switching tube connects described second clock signal, and the source electrode of described the 4th switching tube connects power supply input signal; The source electrode of described the 5th switching tube connects described second clock signal, and the grid of described the 5th switching tube connects the drain electrode of described first switching tube and described second switch pipe, and the drain electrode of described the 5th switching tube connects the output terminal of described shift register cell; The grid of described the 6th switching tube connects the drain electrode of described the 3rd switching tube and described the 4th switching tube, and the source electrode of described the 6th switching tube connects described power supply input signal, and the drain electrode of described the 6th switching tube connects the output terminal of described shift register cell; One end of described first electric capacity connects the grid of described the 5th switching tube, and the other end connects the output terminal of described shift register cell; One end of described second electric capacity connects the grid of described the 6th switching tube, and the other end connects described power supply input signal.
2. shift register cell according to claim 1 is characterized in that, described first to the 6th switching tube is metal-oxide-semiconductor or thin film transistor (TFT).
3. shift register cell according to claim 2 is characterized in that, described thin film transistor (TFT) is P type thin film transistor (TFT) or is the N-type thin film transistor (TFT).
4. shift register cell according to claim 3 is characterized in that, when described first to the 6th switching tube was P type thin film transistor (TFT), described power supply input signal was high level;
In very first time section, described input signal is low level, and described first clock signal is low level, and described second clock signal is high level, and then the output signal of described shift register cell is high level;
In second time period, described input signal is high level, and described first clock signal is high level, and described second clock signal is low level, and then the output signal of described shift register cell is low level;
In the 3rd time period, described input signal is high level, and described first clock signal is low level, and described second clock signal is high level, and then the output signal of described shift register cell is high level.
5. shift register cell according to claim 3 is characterized in that, when described first to the 6th switching tube was the N-type thin film transistor (TFT), described power supply input signal was low level;
In very first time section, described input signal is high level, and described first clock signal is high level, and described second clock signal is low level, and then the output signal of described shift register cell is low level;
In second time period, described input signal is low level, and described first clock signal is low level, and described second clock signal is high level, and then the output signal of described shift register cell is high level;
In the 3rd time period, described input signal is low level, and described first clock signal is high level, and described second clock signal is low level, and then the output signal of described shift register cell is low level.
6. shift register, it is characterized in that, comprise n cascade as each described shift register cell of claim 1-5, described n is the integer greater than 1, wherein, the input end of the 1st described shift register cell is connected to the signal input part of described shift register, and the output terminal of n described shift register cell is connected to the signal output part of described shift register.
7. an array base palte is characterized in that, comprises shift register as claimed in claim 6.
8. a display device is characterized in that, comprises array base palte as claimed in claim 7.
CN 201320060333 2013-02-01 2013-02-01 Shift register unit, shift register, array substrate and display device Expired - Lifetime CN203055466U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320060333 CN203055466U (en) 2013-02-01 2013-02-01 Shift register unit, shift register, array substrate and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320060333 CN203055466U (en) 2013-02-01 2013-02-01 Shift register unit, shift register, array substrate and display device

Publications (1)

Publication Number Publication Date
CN203055466U true CN203055466U (en) 2013-07-10

Family

ID=48738394

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320060333 Expired - Lifetime CN203055466U (en) 2013-02-01 2013-02-01 Shift register unit, shift register, array substrate and display device

Country Status (1)

Country Link
CN (1) CN203055466U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103761938A (en) * 2013-02-01 2014-04-30 京东方科技集团股份有限公司 Shifting register units, shifting register, array substrate and display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103761938A (en) * 2013-02-01 2014-04-30 京东方科技集团股份有限公司 Shifting register units, shifting register, array substrate and display device
WO2014117433A1 (en) * 2013-02-01 2014-08-07 京东方科技集团股份有限公司 Shift register units, shift register, array substrate, and display device
US9159447B2 (en) 2013-02-01 2015-10-13 Boe Technology Group Co., Ltd. Shift register unit, shift register, array substrate and display apparatus
CN103761938B (en) * 2013-02-01 2015-12-30 京东方科技集团股份有限公司 Shift register cell, shift register, array base palte and display device

Similar Documents

Publication Publication Date Title
CN103971628B (en) Shift register cell, gate driver circuit and display device
CN104021750B (en) Shift register cell, gate driver circuit and driving method and display device
CN103500551B (en) Shift register cell, GOA circuit, array base palte and display device
CN102831861B (en) Shifting register, drive method thereof, gate driver and display device
CN203773916U (en) Shift register unit, shift register and display device
US9886927B2 (en) Display device, TFT substrate and GOA driving circuit
CN104282287B (en) A kind of GOA unit and driving method, GOA circuit and display device
US9626928B2 (en) Liquid crystal display device comprising gate driver on array circuit
CN102779478B (en) Shift register unit and driving method, shift register as well as display device thereof
CN104485079B (en) GOA (Gate Driver On Array) circuit for liquid crystal display device
KR102019578B1 (en) GOA circuit and liquid crystal display
CN105185320B (en) A kind of GOA unit, GOA circuits, display driver circuit and display device
CN103165190A (en) Shifting register units, shifting register, array substrate and display device
CN102831860A (en) Shifting register, drive method thereof, gate driver and display device
CN105469760A (en) GOA circuit based on LTPS semiconductor film transistor
CN106128347A (en) Shift register cell and driving method, gate driver circuit, display device
CN105702295A (en) Shifting register unit, gate drive circuit, display panel and display device
WO2014173025A1 (en) Shift register unit, gate drive circuit, and display device
CN105741744A (en) Shifting register unit, grid driving circuit and display device
CN104810003A (en) Shifting register, driving method of shifting register, grid driving circuit and display device
CN106128364A (en) Shift register cell and driving method, gate driver circuit, display device
CN107731187A (en) A kind of shift register and its driving method, gate driving circuit and display device
CN105244000A (en) GOA unit, GOA circuit and display device
CN202771772U (en) Shift register, grid driver and display device
CN106991958B (en) Shifting register unit and driving method thereof, grid driving circuit and display device

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
AV01 Patent right actively abandoned

Granted publication date: 20130710

Effective date of abandoning: 20151230

C25 Abandonment of patent right or utility model to avoid double patenting