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CN203054261U - Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display - Google Patents

Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display Download PDF

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Publication number
CN203054261U
CN203054261U CN 201220661816 CN201220661816U CN203054261U CN 203054261 U CN203054261 U CN 203054261U CN 201220661816 CN201220661816 CN 201220661816 CN 201220661816 U CN201220661816 U CN 201220661816U CN 203054261 U CN203054261 U CN 203054261U
Authority
CN
China
Prior art keywords
film
tft
apf
brightness enhancement
pva
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220661816
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Chinese (zh)
Inventor
邱韶华
钱琨
裴晓明
盛正军
陈敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN SAPO PHOTOELECTRIC CO Ltd
Original Assignee
SHENZHEN SAPO PHOTOELECTRIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by SHENZHEN SAPO PHOTOELECTRIC CO Ltd filed Critical SHENZHEN SAPO PHOTOELECTRIC CO Ltd
Priority to CN 201220661816 priority Critical patent/CN203054261U/en
Application granted granted Critical
Publication of CN203054261U publication Critical patent/CN203054261U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model provides a brightness enhancement polarizer used for a TFT-TN transmissive display. The brightness enhancement polarizer used for the TFT-TN transmissive display comprises a stripping foil, an EWV film, a PVA film, a TAC film, an advance polarizer film (APF) and a protection film which are adhered orderly. An thin brightness enhancement polarizer used for the TFT-TN transmissive display comprises the stripping foil, the EWV film, the PVA film, the APF and the protection film which are adhered orderly, and the APF and the PVA film are adhered directly via a UV adhesive. The APF used in the utility model is lighter and thinner than a conventional dual brightness enhancement film (DBEF), so that the brightness, a visual angle, the reliability of the polarizer, and the delamination resistance and stripping resistance are improved. Moreover, the APF itself has a scratch resistance function, so that the interference line defects in an original brightness enhancement structure can be reduced.

Description

TFT-TN infiltration type display is with blast and slim blast polaroid
Technical field
The utility model relates to a kind of polaroid, relates in particular to twisted nematic type (TN) the infiltration type display blast polaroid for thin film transistor (TFT) (TFT).
Background technology
In order to improve display brightness, generally adopt the DBEF brightness enhancement film in the market, and it utilizes mainly in the backlight part.But because the DBEF brightness enhancement film is thicker, be not suitable for ultra-thinization of TFT display development trend.
Utilize in addition at its brightening effect of backlight part and have only 30%, can promote 5~10% with polaroid applying brightening effect.
The utility model content
In order to solve problem in the prior art, the utility model provides a kind of TFT-TN infiltration type display blast polaroid, comprises stripping film, EWV film, PVA film, TAC film, APF film and the diaphragm of fitting successively.
As further improvement of the utility model, adopt pressure sensitive adhesive to fit between described stripping film and the EWV film.
As further improvement of the utility model, adopt pressure sensitive adhesive to fit between described APF film and the TAC film.
As further improvement of the utility model, adopt the PVA water-soluble glue to fit between described PVA film and the EAV film.
As further improvement of the utility model, adopt the PVA water-soluble glue to fit between the described TAC film.
As further improvement of the utility model, the TD direction of APF is parallel with the MD direction of PVA film during applying, TD direction, i.e. the fabric width direction of film; The MD direction, i.e. film rolling direction.
A kind of TFT-TN infiltration type display comprises stripping film, EWV film, PVA film, APF film and the diaphragm of fitting successively with slim blast polaroid, the APF film directly and the PVA film close by the UV sticker.
The beneficial effects of the utility model are: the APF film that adopts in the utility model has lighter and thinner design than traditional DBEF film, when can improve brightness, improved visible angle, improve the reliability of polaroid, anti-layering, skimming resistance also are improved, and carry the scratch resistance function, can reduce the ratio that the interference lines defective in original brightening structure occurs.
Description of drawings
Fig. 1 is the utility model TFT-TN infiltration type display blast polaroid structural representation;
Fig. 2 be in the utility model the APF film cut synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further.
The English alphabet that relates in the literary composition Chinese as follows:
TFT: thin film transistor (TFT) (Thin Film Transistor)
DBEF: brightness enhancement film (Dual Brightness Enhancement Film (DBEF)
APF: reflection-type polarisation ultra thin optical film (Advance Polarizer Film), supplied by 3M company.
TAC: three cellulose acetate membrane
PVA: polyvinyl alcohol film
TD direction: the fabric width direction of film
MD direction: film rolling direction
UV: ultra-violet curing glue
EWV: wide visual angle film
TFT-TN infiltration type display blast polaroid: as shown in Figure 1, comprise stripping film 1, EWV 2, PVA film 3, TAC film 4, APF film 5 and the diaphragm 6 of fitting successively.
Between stripping film and the EWV film, all adopt pressure sensitive adhesive to fit between APF film and the TAC film, adopt the PVA water-soluble glue to fit between PVA film and EWV film, the TAC film.
The parallel applying of MD direction of the TD direction of APF film and PVA film.
In addition, in order to pursue thinner design, can also with the APF film directly and the PVA film close by the UV sticker, from and can lack one deck TAC film.
The applying method of APF, as Fig. 2:
Along the TD direction, cut into sheet perpendicular to the MD direction, the width that cuts is determined by the fabric width of PVA film, then with adhesive tape with b1, b2 ... the limit is bonded, the rolling rolling, at last APF film and the former mating plate of this web-like are fitted with the form of volume to volume, can reach the TD direction of APF film and the parallel applying of MD direction of PVA film, and this kind laminating type is enhanced productivity.
Above content be in conjunction with concrete preferred implementation to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection domain of the present utility model.

Claims (7)

1. a TFT-TN infiltration type display blast polaroid is characterized in that: comprise stripping film, EWV film, PVA film, TAC film, APF film and the diaphragm of fitting successively.
2. TFT-TN infiltration type display blast polaroid according to claim 1 is characterized in that: adopt pressure sensitive adhesive to fit between described stripping film and the EWV film.
3. TFT-TN infiltration type display blast polaroid according to claim 1 is characterized in that: adopt pressure sensitive adhesive to fit between described APF film and the TAC film.
4. TFT-TN infiltration type display blast polaroid according to claim 1 is characterized in that: adopt the PVA water-soluble glue to fit between described PVA film and the EAV film.
5. TFT-TN infiltration type display blast polaroid according to claim 1 is characterized in that: adopt the PVA water-soluble glue to fit between the described TAC film.
6. according to any described TFT-TN infiltration type display blast polaroid of claim 1 to 5, it is characterized in that: the TD direction of APF is parallel with the MD direction of PVA film during applying, TD direction, i.e. the fabric width direction of film; The MD direction, i.e. film rolling direction.
7. a TFT-TN infiltration type display is characterized in that with slim blast polaroid: comprise stripping film, EWV film, PVA film, APF film and the diaphragm of fitting successively, the APF film directly and the PVA film close by the UV sticker.
CN 201220661816 2012-12-05 2012-12-05 Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display Expired - Lifetime CN203054261U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220661816 CN203054261U (en) 2012-12-05 2012-12-05 Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220661816 CN203054261U (en) 2012-12-05 2012-12-05 Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display

Publications (1)

Publication Number Publication Date
CN203054261U true CN203054261U (en) 2013-07-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220661816 Expired - Lifetime CN203054261U (en) 2012-12-05 2012-12-05 Brightness enhancement polarizer and thin brightness enhancement polarizer used for thin film transistor-twisted nematic (TFT-TN) transmissive display

Country Status (1)

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CN (1) CN203054261U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105931501A (en) * 2016-06-03 2016-09-07 深圳市中幼国际教育科技有限公司 Large-visual angle children' reading machine
CN106094228A (en) * 2016-06-01 2016-11-09 武汉华星光电技术有限公司 Thin film that grating is integrated with polaroid and manufacture method, display

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106094228A (en) * 2016-06-01 2016-11-09 武汉华星光电技术有限公司 Thin film that grating is integrated with polaroid and manufacture method, display
CN106094228B (en) * 2016-06-01 2019-11-26 武汉华星光电技术有限公司 Grating and the integrated film of polaroid and its manufacturing method, display
CN105931501A (en) * 2016-06-03 2016-09-07 深圳市中幼国际教育科技有限公司 Large-visual angle children' reading machine

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Granted publication date: 20130710