CN202888814U - IGBT short circuit protection soft turn-off circuit - Google Patents
IGBT short circuit protection soft turn-off circuit Download PDFInfo
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- CN202888814U CN202888814U CN 201220510884 CN201220510884U CN202888814U CN 202888814 U CN202888814 U CN 202888814U CN 201220510884 CN201220510884 CN 201220510884 CN 201220510884 U CN201220510884 U CN 201220510884U CN 202888814 U CN202888814 U CN 202888814U
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Abstract
本实用新型公开了一种IGBT短路保护软关断电路，包括：三极管Q1、三极管Q3、三极管Q4；二极管D2、PNP三极管Q2；驱动电阻R4、驱动电阻R6、驱动电阻R7、电阻R2、限流电阻R3、限流电阻R5。本实用新型可以方便调整IGBT关断的驱动电阻，配合IGBT的集电极、发射极之间电压的测量，实现理想的IGBT短路保护软关断的效果。
The utility model discloses an IGBT short-circuit protection soft shut-off circuit, comprising: triode Q1, triode Q3, triode Q4; diode D2, PNP triode Q2; driving resistor R4, driving resistor R6, driving resistor R7, resistor R2, current limiting Resistor R3, current limiting resistor R5. The utility model can conveniently adjust the driving resistance of the IGBT turn-off, cooperate with the measurement of the voltage between the collector electrode and the emitter electrode of the IGBT, and realize the ideal IGBT short-circuit protection soft turn-off effect.
Description
Technical field
The utility model belongs to circuit protection field, particularly relates to a kind of frequency converter short-circuit protection circuit.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, by the compound full-control type voltage driven type power semiconductor that BJT (double pole triode) and MOS (insulating gate type field effect tube) form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.
In frequency converter, IGBT is very crucial device, must do omnibearing protection to it.And the short-circuit protection of the IGBT most important thing especially.When the frequency converter short circuit occurs, usually all be accompanied by serious equipment fault, misoperation, most probably cause damage of equipment or human casualty accident.And the short-circuit protection of IGBT is avoided one of best method of this consequence just.
In frequency converter, when being short-circuited, IGBT can be accompanied by great electric current, and maximum can reach several times of IGBT rated current.The IGBT short-circuit detecting circuit is realized that by other circuit open in the applicant's patent application before this, number of patent application is: 201220444103.3.If the short-circuit detecting circuit of IGBT detects the IGBT short circuit, need to send IGBT-Driver than controller and turn-off the more Zao shutoff IGBT order of IGBT order, prevent that IGBT from crossing cause thermal damage.This moment, the IGBT short-circuit detecting circuit produced the IGBT-Fault signal, made this signal become high level by low level.
In the circuit in the past, because the existence of stray inductance on the major loop is turn-offed excessive electric current and will be produced too high shutoff overvoltage during short-circuit protection, be easy to exceed the safety operation area of IGBT, thereby cause the overvoltage of IGBT to lose efficacy.If when the IGBT short circuit, prolong the turn-off time of IGBT, just can realize the soft shutoff of short circuit of IGBT, thereby reduce the shutoff overvoltage of IGBT, protected IGBT.
Summary of the invention
Goal of the invention: a kind of IGBT short-circuit protection soft breaking circuit is provided, when the IGBT short circuit, prolongs the turn-off time of IGBT, reduce the shutoff overvoltage of IGBT, protection IGBT.
Technical scheme: a kind of IGBT short-circuit protection soft breaking circuit comprises: triode Q1, triode Q3, triode Q4; Diode D2, PNP triode Q2; Drive resistance R 4, drive resistance R 6, drive resistance R 7, resistance R 2, current-limiting resistance R3, current-limiting resistance R5, it is characterized in that, current-limiting resistance R3, current-limiting resistance R5 are respectively the base stage current-limiting resistances of triode Q3, triode Q4, the end of current-limiting resistance R3, current-limiting resistance R5 is parallel to the end that IGBT drives signal IGBT-Driver, the current-limiting resistance R5 other end and triode Q3, drives the resistance R 7 afterwards ground connection of connecting; The other end of current-limiting resistance R3 and triode Q4, drive the resistance R 6 afterwards ground connection of connect; The current-limiting resistance R5 other end is connected with IGBT saturation voltage drop detection signal IGBT-Fault with diode D2, triode Q1 series connection is rear; Ground connection after triode Q1, resistance R 2, PNP triode Q2,4 series connection of driving resistance R;
When the IGBT short circuit, short-circuit detecting circuit produces IGBT saturation voltage drop detection signal IGBT-Fault, make this signal become high level+15V by low level-10V, triode Q4 keeps turn-offing, triode Q1 saturation conduction, diode D2 is clamped to the base stage of triode Q3-10V, and triode Q3 is turned off; And conducting PNP triode Q2 this moment, the grid of IGBT is discharged to-10V by+15V by driving resistance R 4; Drive resistance R 4 resistances by reasonable setting, just can prolong the turn-off time of IGBT, realize the soft shutoff of short circuit of IGBT;
When IGBT was not short-circuited, IGBT saturation voltage drop detection signal IGBT-Fault kept high level+15V always, and PNP triode Q2 keeps turn-offing always; IGBT drives signal IGBT-Driver when being high level+15V, triode Q3 conducting, and triode Q4 turn-offs, and drives the service time of resistance R 7 control IGBT; When IGBT drives signal IGBT-Driver and becomes low level-10V, triode Q4 conducting, triode Q3 turn-offs, by driving the turn-off time of resistance R 6 control IGBT.
Advantage of the present utility model and beneficial effect: this circuit all adopts discrete device to finish, and has reliability height, antijamming capability advantage strong, with low cost; Breaking circuit when working from IGBT during the IGBT short circuit adopts respectively different branch roads, and is noiseless each other; Can conveniently adjust the driving resistance that IGBT turn-offs, cooperate the measurement of voltage between the collector electrode, emitter of IGBT, can reach very easily the effect of the soft shutoff of ideal I GBT short-circuit protection.
Description of drawings
Fig. 1 is the utility model IGBT short-circuit protection soft breaking circuit schematic diagram;
Fig. 2 is the utility model embodiment circuit diagram;
Fig. 3 is that the IGBT collector electrode-emitter when IGBT is not short-circuited among the utility model embodiment turn-offs overvoltage figure;
Fig. 4 is the grid-emitter voltage oscillogram when IGBT is not short-circuited among the utility model embodiment;
Fig. 5 is that the collector electrode-emitter when IGBT is short-circuited among the utility model embodiment turn-offs overvoltage figure;
Fig. 6 is the grid during the IGBT short circuit-emitter voltage falling waveform figure among the utility model embodiment;
Fig. 7 is that the collector electrode-emitter when IGBT is short-circuited among the utility model embodiment turn-offs overvoltage figure;
Fig. 8 is the grid-emitter voltage falling waveform figure when IGBT is short-circuited among the utility model embodiment.
Embodiment
In order to make the purpose, technical solutions and advantages of the present invention clearer, describe the present invention below in conjunction with the drawings and specific embodiments.
Such as Fig. 1, a kind of IGBT short-circuit protection soft breaking circuit comprises: triode Q1, triode Q3, triode Q4; Diode D2, PNP triode Q2; Drive resistance R 4, drive resistance R 6, drive resistance R 7, resistance R 2, current-limiting resistance R3, current-limiting resistance R5, it is characterized in that, current-limiting resistance R3, current-limiting resistance R5 are respectively the base stage current-limiting resistances of triode Q3, triode Q4, the end of current-limiting resistance R3, current-limiting resistance R5 is parallel to the end that IGBT drives signal IGBT-Driver, the current-limiting resistance R5 other end and triode Q3, drives the resistance R 7 afterwards ground connection of connecting; The other end of current-limiting resistance R3 and triode Q4, drive the resistance R 6 afterwards ground connection of connect; The current-limiting resistance R5 other end is connected with IGBT saturation voltage drop detection signal IGBT-Fault with diode D2, triode Q1 series connection is rear; Ground connection after triode Q1, resistance R 2, PNP triode Q2,4 series connection of driving resistance R;
When the IGBT short circuit, short-circuit detecting circuit produces IGBT saturation voltage drop detection signal IGBT-Fault, make this signal become high level+15V by low level-10V, triode Q4 keeps turn-offing, triode Q1 saturation conduction, diode D2 is clamped to the base stage of triode Q3-10V, and triode Q3 is turned off; And conducting PNP triode Q2 this moment, the grid of IGBT is discharged to-10V by+15V by driving resistance R 4; Drive resistance R 4 resistances by reasonable adjustment, just can adjust the turn-off time of IGBT, realize the soft shutoff of short circuit of IGBT;
When IGBT was not short-circuited, IGBT saturation voltage drop detection signal IGBT-Fault kept high level+15V always, and PNP triode Q2 keeps turn-offing always; IGBT drives signal IGBT-Driver when being high level+15V, triode Q3 conducting, and triode Q4 turn-offs, and drives the service time of resistance R 7 control IGBT; When IGBT drives signal IGBT-Driver and becomes low level-10V, triode Q4 conducting, triode Q3 turn-offs, by driving the turn-off time of resistance R 6 control IGBT.
Fig. 2 is the utility model embodiment circuit diagram, and the busbar voltage of major loop is 100V, and the electric current of the IGBT that flows through is 100A, and stray inductance is 100nH.Voltage source V 1 is for generation of+15V voltage, and voltage source V 4 is for generation of-10V voltage.Voltage source V 3 drives signal IGBT-Driver, frequency 1KHz, duty ratio 30% for generation of IGBT.Voltage source V 2 is for generation of IGBT saturation voltage drop detection signal IGBT-Fault, frequency 100Hz.Voltage source V 5 is major loop busbar voltages, and R9 is current-limiting resistance, and L1 is stray inductance.
Fig. 3 is that the IGBT collector electrode-emitter when IGBT is not short-circuited among the utility model embodiment turn-offs overvoltage figure, drives resistance R 6, drives resistance R 7 and be 2 Ω.The collector electrode of IGBT-emitter overshoot voltage is about 40V.
Fig. 4 is the grid-emitter voltage oscillogram when IGBT is not short-circuited among the utility model embodiment, drives resistance R 6, drives resistance R 7 and be 2 Ω.Grid-emitter voltage is about fall time: 3.75 μ S.
Fig. 5 is that the collector electrode-emitter when IGBT is short-circuited among the utility model embodiment turn-offs overvoltage figure, drives resistance R 6, drives resistance R 7 and be 2 Ω, and driving resistance R 4 is 5 Ω.The collector electrode of IGBT-emitter overshoot voltage is 30V.
Fig. 6 is the grid during the IGBT short circuit-emitter voltage falling waveform figure among the utility model embodiment, drives resistance R 6, drives resistance R 7 and be 2 Ω, and driving resistance R 4 is 5 Ω.Grid-emitter voltage is about 7.5 μ S fall time.By seeing that with the contrast of figure two grid-emitter voltage obviously prolongs fall time, this is because the IGBT soft breaking circuit is worked.
Fig. 7 is that the collector electrode-emitter when IGBT is short-circuited among the utility model embodiment turn-offs overvoltage figure; Driving resistance R 6, driving resistance R 7 are 2 Ω.Change the resistance that drives resistance R 4 into 50 Ω by 5 Ω, the collector electrode of IGBT-emitter overshoot voltage is 10V.Among the figure, curve 1 is the shutoff waveform of 50 Ω for driving resistance R 4, and curve 2 is the shutoff waveform of 5 Ω for driving resistance R 4.
Fig. 8 is the grid-emitter voltage falling waveform figure when IGBT is short-circuited among the utility model embodiment, drives resistance R 6, drives resistance R 7 and be 2 Ω.Change the resistance that drives resistance R 4 into 50 Ω by 5 Ω.Curve 3 is the shutoff waveform of 50 Ω for driving resistance R 4, and curve 4 is the shutoff waveform of 5 Ω for driving resistance R 4.Can see by contrast, change the resistance that drives resistance R 4 and just can change the turn-off time of IGBT, thereby realized the soft shutoff of short circuit of IGBT.
This circuit all adopts discrete device to finish, and has reliability height, antijamming capability advantage strong, with low cost.Breaking circuit when working from IGBT during the IGBT short circuit adopts respectively different branch roads, and is noiseless each other.Can conveniently adjust the driving resistance that IGBT turn-offs, cooperate the measurement of voltage between the collector electrode, emitter of IGBT, can reach very easily the effect of the soft shutoff of ideal I GBT short-circuit protection.
Claims (3)
1. an IGBT short-circuit protection soft breaking circuit comprises: triode Q1, triode Q3, triode Q4; Diode D2, PNP triode Q2; Drive resistance R 4, drive resistance R 6, drive resistance R 7, resistance R 2, current-limiting resistance R3, current-limiting resistance R5, it is characterized in that, current-limiting resistance R3, current-limiting resistance R5 are respectively the base stage current-limiting resistances of triode Q3, triode Q4, the end of current-limiting resistance R3, current-limiting resistance R5 is parallel to the end that IGBT drives signal IGBT-Driver, the current-limiting resistance R5 other end and triode Q3, drives the resistance R 7 afterwards ground connection of connecting; The other end of current-limiting resistance R3 and triode Q4, drive the resistance R 6 afterwards ground connection of connect; The current-limiting resistance R5 other end is connected with IGBT saturation voltage drop detection signal IGBT-Fault with diode D2, triode Q1 series connection is rear; Ground connection after triode Q1, resistance R 2, PNP triode Q2,4 series connection of driving resistance R.
2. IGBT short-circuit protection soft breaking circuit as claimed in claim 1, it is characterized in that, when the IGBT short circuit, short-circuit detecting circuit produces IGBT saturation voltage drop detection signal IGBT-Fault, make this signal become high level+15V by low level-10V, triode Q4 keeps turn-offing triode Q1 saturation conduction, diode D2 is clamped to the base stage of triode Q3-10V, and triode Q3 is turned off; And conducting PNP triode Q2 this moment, the grid of IGBT is discharged to-10V by+15V by driving resistance R 4; Drive resistance R 4 resistances by reasonable setting, just can prolong the turn-off time of IGBT, realize the soft shutoff of short circuit of IGBT.
3. IGBT short-circuit protection soft breaking circuit as claimed in claim 1 is characterized in that, when IGBT was not short-circuited, IGBT saturation voltage drop detection signal IGBT-Fault kept high level+15V always, and PNP triode Q2 keeps turn-offing always; IGBT drives signal IGBT-Driver when being high level+15V, triode Q3 conducting, and triode Q4 turn-offs, and drives the service time of resistance R 7 control IGBT; When IGBT saturation voltage drop detection signal IGBT-Driver becomes low level-10V, triode Q4 conducting, triode Q3 turn-offs, by driving the turn-off time of resistance R 6 control IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220510884 CN202888814U (en) | 2012-09-29 | 2012-09-29 | IGBT short circuit protection soft turn-off circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220510884 CN202888814U (en) | 2012-09-29 | 2012-09-29 | IGBT short circuit protection soft turn-off circuit |
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| CN202888814U true CN202888814U (en) | 2013-04-17 |
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| CN 201220510884 Expired - Lifetime CN202888814U (en) | 2012-09-29 | 2012-09-29 | IGBT short circuit protection soft turn-off circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9812941B2 (en) | 2015-09-11 | 2017-11-07 | Nxp Usa, Inc. | High power driver having multiple turn off modes |
| US9887534B2 (en) | 2014-06-11 | 2018-02-06 | Delta Electronics (Shanghai) Co., Ltd. | Power converter, short-circuit detecting device thereof and short-circuit detecting method thereof |
| CN110572011A (en) * | 2019-08-20 | 2019-12-13 | 合肥工业大学 | IGBT drive circuit soft switching device with short circuit protection |
| US10587258B2 (en) | 2018-06-19 | 2020-03-10 | Delta Electronics, Inc. | Drive circuit of power semiconductor switch |
| WO2023197594A1 (en) * | 2022-04-11 | 2023-10-19 | 潍柴动力股份有限公司 | Overvoltage protection driving circuit, motor driving circuit, and vehicle |
-
2012
- 2012-09-29 CN CN 201220510884 patent/CN202888814U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9887534B2 (en) | 2014-06-11 | 2018-02-06 | Delta Electronics (Shanghai) Co., Ltd. | Power converter, short-circuit detecting device thereof and short-circuit detecting method thereof |
| US9812941B2 (en) | 2015-09-11 | 2017-11-07 | Nxp Usa, Inc. | High power driver having multiple turn off modes |
| US10587258B2 (en) | 2018-06-19 | 2020-03-10 | Delta Electronics, Inc. | Drive circuit of power semiconductor switch |
| CN110572011A (en) * | 2019-08-20 | 2019-12-13 | 合肥工业大学 | IGBT drive circuit soft switching device with short circuit protection |
| CN110572011B (en) * | 2019-08-20 | 2020-10-02 | 合肥工业大学 | Soft switching device of IGBT drive circuit with short circuit protection |
| WO2023197594A1 (en) * | 2022-04-11 | 2023-10-19 | 潍柴动力股份有限公司 | Overvoltage protection driving circuit, motor driving circuit, and vehicle |
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| C14 | Grant of patent or utility model | ||
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Address after: 100043 Shijingshan District City, the ancient city of Beijing, West Street, No. 19 small and medium enterprises base Patentee after: HICONICS ECO-ENERGY TECHNOLOGY Co.,Ltd. Address before: 100176, No. two, No. 3, Yizhuang Economic Development Zone, Beijing, Beijing, Daxing District, Boxing Patentee before: HICONICS DRIVE TECHNOLOGY CO.,LTD. |
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Granted publication date: 20130417 |