CN202187081U - 一种单晶炉热场 - Google Patents
一种单晶炉热场 Download PDFInfo
- Publication number
- CN202187081U CN202187081U CN2011202756477U CN201120275647U CN202187081U CN 202187081 U CN202187081 U CN 202187081U CN 2011202756477 U CN2011202756477 U CN 2011202756477U CN 201120275647 U CN201120275647 U CN 201120275647U CN 202187081 U CN202187081 U CN 202187081U
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- heat
- heat shield
- furnace
- single crystal
- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004321 preservation Methods 0.000 abstract description 28
- 230000000694 effects Effects 0.000 abstract description 10
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202756477U CN202187081U (zh) | 2011-07-30 | 2011-07-30 | 一种单晶炉热场 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202756477U CN202187081U (zh) | 2011-07-30 | 2011-07-30 | 一种单晶炉热场 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202187081U true CN202187081U (zh) | 2012-04-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202756477U Expired - Lifetime CN202187081U (zh) | 2011-07-30 | 2011-07-30 | 一种单晶炉热场 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202187081U (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105177701A (zh) * | 2015-10-14 | 2015-12-23 | 江苏华盛天龙光电设备股份有限公司 | 一种低能耗单晶炉 |
| CN109097822A (zh) * | 2018-09-29 | 2018-12-28 | 包头美科硅能源有限公司 | 一种降低单晶晶棒中的碳含量方法 |
| CN111121444A (zh) * | 2019-12-30 | 2020-05-08 | 昇力恒(宁夏)真空科技股份公司 | 一种热屏隔离式超高温真空烧结炉 |
-
2011
- 2011-07-30 CN CN2011202756477U patent/CN202187081U/zh not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105177701A (zh) * | 2015-10-14 | 2015-12-23 | 江苏华盛天龙光电设备股份有限公司 | 一种低能耗单晶炉 |
| CN109097822A (zh) * | 2018-09-29 | 2018-12-28 | 包头美科硅能源有限公司 | 一种降低单晶晶棒中的碳含量方法 |
| CN109097822B (zh) * | 2018-09-29 | 2020-11-03 | 包头美科硅能源有限公司 | 一种降低单晶晶棒中的碳含量方法 |
| CN111121444A (zh) * | 2019-12-30 | 2020-05-08 | 昇力恒(宁夏)真空科技股份公司 | 一种热屏隔离式超高温真空烧结炉 |
| CN111121444B (zh) * | 2019-12-30 | 2022-04-05 | 昇力恒(宁夏)真空科技股份公司 | 一种热屏隔离式超高温真空烧结炉 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Wei Inventor before: Wang Wei Inventor before: Wei Zhimin |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: WANG WEI WEI ZHIMIN TO: WANG WEI |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120411 |