CN201903704U

CN201903704U - Coupling device for multi-wavelength and high-power semiconductor laser

Info

Publication number: CN201903704U
Application number: CN2010206661147U
Authority: CN
Inventors: 刘兴胜; 王晓飚; 王敏; 栾凯; 郑艳芳; 杨凯
Original assignee: Xian Focuslight Technology Co Ltd
Current assignee: Focuslight Technologies Inc
Priority date: 2010-12-17
Filing date: 2010-12-17
Publication date: 2011-07-20
Anticipated expiration: 2020-12-17

Abstract

The utility model discloses a coupling device for a multi-wavelength and high-power semiconductor laser, which comprises a semiconductor laser polarization beam combining module, a filtering module and a focusing lens, wherein the semiconductor laser polarization beam combining module is arranged at the front end of the filtering module; and the focusing lens is arranged at the rear end of the filtering module. According to the coupling device for the multi-wavelength and high-power semiconductor laser, by adopting a unique optical fiber coupling technology, the multi-wavelength and high-power output can be achieved; the high density of optical power is obtained; and meanwhile, the shapes and the sizes of light spots are controllable.

Description

A kind of multi-wavelength high-power semiconductor laser coupling device

Technical field

The utility model belongs to field of semiconductor lasers, relates to a kind of semiconductor laser coupling device, especially a kind of multi-wavelength high-power semiconductor laser coupling device.

Background technology

Volume is little, in light weight owing to having, the life-span long for semiconductor laser diode (LD), the electro-optical efficiency advantages of higher, be widely used in each field of civil and military, as various aspects such as medical treatment, printing, laser ranging, laser guidance, material processed and processing, particularly solid state laser of LD pumping (DPL) and the developing direction that fiber laser has become to attach most importance to have obtained paying attention to widely and studying.Pursuing superpower laser has more in recent years become the developing goal of laser instrument, and the power expansion technology is one of technological trend of superpower laser.Advantages such as especially high-power semiconductor laser and light-pumped solid state laser thereof have that volume is little, in light weight, photoelectric transformation efficiency is high, stable performance, reliability height and life-span are long, become the most rising product in the photoelectricity industry, can be widely used in fields such as industry, military affairs, medical treatment and direct material processed.

In order to improve the output power of high power semiconductor lasers, can be with tens or tens integrated encapsulation of single tube chip of laser, form laser instruments crust bar, a plurality of crust bars are piled up can form the folded battle array of laser instrument two dimension, the luminous power of the folded battle array of laser instrument can reach multikilowatt even higher.But along with the increase of semiconductor laser bar number, its beam quality will descend.In addition, the singularity of semiconductor laser structure has determined that it is fast, the slow axis beam quality is inconsistent: the beam quality of fast axle is near diffraction limit, and the beam quality of slow axis is poor, and this makes semiconductor laser be subjected to very big restriction in commercial Application.Realize the Laser Processing of high-quality, wide region, laser instrument must satisfy high power and high light beam quality simultaneously.Therefore, now developed country all will research and develop novel high-power, high light beam quality high power semiconductor lasers as an important research direction, with the Materialbearbeitung mit Laserlicht demands of applications of the higher laser power density that meets the demands.

The utility model content

The purpose of this utility model is to overcome the shortcoming of above-mentioned prior art, a kind of multi-wavelength high-power semiconductor laser coupling device is provided, this multi-wavelength high-power semiconductor laser coupling device can be realized the output of multi-wavelength high-power output, and light spot shape is controlled.

The purpose of this utility model solves by the following technical programs:

This multi-wavelength high-power semiconductor laser coupling device comprises that one or more semiconductor laser polarizations close bundle module, filtration module and condenser lens; Described semiconductor laser polarization closes the bundle module and comprises the folded battle array of semiconductor laser collimating module, the folded battle array collimation of semiconductor laser polarization module, PBS prism; It is the laser of λ for the P wavelength that the folded battle array of described semiconductor laser collimating module is launched polarization state to the PBS prism; It is the laser of λ for the S wavelength that the folded battle array collimation of described semiconductor laser polarization module is launched polarization state to the PBS prism; Described PBS prism carries out exporting filtration module to after polarization closes bundle to the two bundle laser of injecting; Described filtration module reception is closed the emergent light of the PBS prism of restrainting module from described semiconductor laser polarization and is carried out filtering and close the bundle processing, and the laser that forming a beam power increases exports described condenser lens to; Described condenser lens output multiwavelength laser.Described semiconductor laser polarization closes the bundle module and is connected with controller.

The folded battle array of above-mentioned semiconductor laser collimating module is made up of the folded battle array of the semiconductor laser that is arranged in order, fast axis collimation lenticule, slow axis collimation microlens; The shoot laser of the folded battle array of described semiconductor laser successively through soon, behind the slow axis collimation microlens, launching polarization state is the laser of λ for the P wavelength.

The folded battle array collimation of above-mentioned semiconductor laser polarization module is made up of the folded battle array of the semiconductor laser that is arranged in order, fast axis collimation lenticule, slow axis collimation microlens and wave plate; The shoot laser of the folded battle array of described semiconductor laser successively through soon, behind slow axis collimation microlens and the rotatory polarization wave plate, launching polarization state is the laser of λ for the S wavelength.

The folded battle array of above-mentioned semiconductor laser is made up of one or more semiconductor lasers.

In preferred embodiment of the present utility model, to show three described semiconductor laser polarizations in filtration module side parallel and close the bundle module, described filtration module comprises a plurality of completely reflecting mirrors and filter mirror; Three semiconductor laser polarizations close bundle module emitting laser and close bundle respectively after a plurality of completely reflecting mirrors of filtration module and filter mirror are handled and be a branch of shoot laser.

Above-mentioned condenser lens is made up of one or more male-female spherical lenses, biconvex lens, biconcave lens or curved surface-planar lens.

Be provided with hygrosensor and power detector temperature and power in the above-mentioned multi-wavelength high-power semiconductor laser coupling device with control system.

The utility model has following beneficial effect with respect to prior art:

(1) optical power density height, general folded battle array coupling brightness is lower, the folded battle array of multi-wavelength high-power semiconductor laser of the present utility model coupled system Output optical power density height.

(2) power height, the folded battle array of multi-wavelength high-power semiconductor laser of the present utility model coupled system output power height.

(3) the utility model closes the bundle module and closes filtration module and the condenser lens that bundle is handled for its filtering by a plurality of semiconductor laser polarizations are set, and has realized multi-wavelength output.

(4) the utility model is by the size and the controllable shapes of the hot spot of condenser lens output, and is easy to use.

Description of drawings

Fig. 1 is the folded battle array of a multi-wavelength high-power semiconductor laser of the present utility model coupled system composition diagram;

Fig. 2 is a fundamental diagram of the present utility model.

Wherein: 1 closes the bundle module for the semiconductor laser polarization; 2 is filtration module; 3 is condenser lens; 4 are the folded battle array of semiconductor laser collimating module; 5 are the folded battle array collimation of semiconductor laser polarization module; 6 is the PBS prism; 7 are the folded battle array of semiconductor laser; 8 is the fast axis collimation lenticule; 9 is the slow axis collimation microlens; 10 is the rotatory polarization wave plate; 11 is catoptron; 12,13 is filter mirror; 14,15,16,17,18,19,20,21,22,23,24,25 is laser.

Embodiment

This kind multi-wavelength high-power semiconductor laser coupling device of the present utility model comprises that one or more semiconductor laser polarizations close bundle module 1, filtration module 2 and condenser lens 3.The folded battle array of described semiconductor polarization closes bundle module 1 and places filtration module 2 front ends, and condenser lens 3 places the filtration module rear end; Also be provided with hygrosensor and power detector in this device and be used for laser temperature and the power that probing semiconductor laser instrument polarization closes bundle module 1.Semiconductor laser polarization of the present utility model in addition closes the bundle module and also is connected with controller, when a plurality of semiconductor laser polarizations close bundle module 1, can control respectively or whole control it.

The semiconductor laser polarization closes bundle module 1 and comprises the folded battle array of semiconductor laser collimating module 4, the folded battle array collimation of semiconductor laser polarization module 5, PBS prism 6.The folded battle array of semiconductor laser collimating module 4 is made up of the folded battle array 7 of the semiconductor laser that is arranged in order, fast axis collimation lenticule 8, slow axis collimation microlens 9; The shoot laser of the folded battle array 7 of semiconductor laser successively through soon, behind the slow

axis collimation microlens

8,9, launching polarization state is the laser of λ for the P wavelength.The folded battle array collimation of semiconductor laser polarization module 5 is made up of the folded battle array 7 of the semiconductor laser that is arranged in order, fast axis collimation lenticule 8, slow axis collimation microlens 9 and rotatory polarization wave plate 10; The shoot laser of the folded battle array 7 of semiconductor laser successively through soon, behind slow

axis collimation microlens

8,9 and the rotatory polarization wave plate 10, launching polarization state is the laser of λ for the S wavelength.In the utility model, the folded battle array 7 of semiconductor laser is made up of a plurality of (as 1-20) semiconductor laser.Condenser lens 3 is made up of one or more male-female spherical lenses, biconvex lens, biconcave lens or curved surface-planar lens.

In the utility model, when comprising that a plurality of semiconductor laser polarizations close bundle during module, can be in parallel, can connect, can connection in series-parallel in conjunction with or can distinguish control separately.Simultaneously multi-wavelength high-power semiconductor laser coupling device can also add temperature detector and power detector temperature and the power with control system.

In above composition, it is the laser of λ for the P wavelength that the folded battle array of semiconductor laser collimating module 4 is launched polarization state to PBS prism 6; It is the laser of λ for the S wavelength that the folded battle array collimation of semiconductor laser polarization module 5 is launched polarization state to PBS prism 6; The two bundle laser that 6 pairs on PBS prism is injected carry out exporting filtration module 2 to after polarization closes bundle; Filtration module 2 receptions are closed the emergent light of the PBS prism 6 of restrainting module 1 from described semiconductor laser polarization and are carried out filtering and close the bundle processing, and the laser that forming a beam power increases exports described condenser lens 3 to; Condenser lens 3 output multiwavelength laser.

Below in conjunction with drawings and Examples the utility model is done and to be described in further detail:

Embodiment

With reference to shown in Figure 1, present embodiment comprises that the semiconductor laser polarization closes bundle module 1, filtration module 2, condenser lens 3.Wherein the folded battle array of semiconductor polarization closes bundle module 1 and places filtration module 2 front ends, and condenser lens 3 places filtration module 2 rear ends.In the present embodiment, parallel is shown three semiconductor laser polarizations and is closed bundle module 1, filtration module 2 comprises 4 completely reflecting

mirrors

11 and 2 filter mirrors 12, and the completely reflecting mirror 11 at this place and the number of filter mirror 12 are to add or delete according to the needs that the semiconductor laser polarization closes bundle module 1.Three semiconductor laser polarizations close bundle module 1 emitting laser and close bundle respectively after a plurality of completely reflecting mirrors of filtration module 2 and filter mirror are handled and be a branch of shoot laser.

It is as follows that this multi-wavelength high-power semiconductor laser coupling device gets principle of work:

Close bundle module 1 for the folded battle array of semiconductor laser polarization, place the folded battle array of the semiconductor laser collimating module 4 of PBS prism 6 front ends to launch soon, the lenticule 8 of slow axis, polarization state behind 9 collimations is the laser of λ for the P wavelength, place the folded battle array collimation of the semiconductor laser polarization module 5 of PBS prism 6 upper ends to launch through soon, the lenticule 8 of slow axis, for the S wavelength laser of λ through rotatory polarization wave plate 10 rear polarizer attitudes again behind 9 collimations, the light total transmissivity that 6 pairs of polarization states of PBS prism are P, to polarization state is the light total reflection of S, behind this two bundles laser process PBS prism 6, carry out polarization and close bundle, its power doubles.

Same principle, close bundle module 1 for the folded battle array of an a plurality of semiconductor lasers polarization, carry out after polarization closes bundle, the folded battle array of each semiconductor laser polarization closes the wavelength difference of bundle module 1 output, at catoptron and optical filtering, export from focus lamp 3 behind the sharp combiner of a plurality of wavelength through filtration module 2.Can carry out the adjusting of wavelength, power and hot spot as required.

As shown in Figure 2, close the bundle module for the folded battle array of first semiconductor laser polarization, place the folded battle array of the semiconductor laser collimating module 4 of PBS prism 6 front ends to launch soon, polarization state behind the lenticule collimation of slow axis is the laser 14 of λ 1 for the P wavelength, place the folded battle array collimation of the semiconductor laser polarization module 5 of PBS prism 6 upper ends to launch through soon, for the S wavelength laser 15 of λ through rotatory polarization wave plate 10 rear polarizer attitudes again behind the lenticule collimation of slow axis, the light total transmissivity that 6 pairs of polarization states of PBS prism are P, to polarization state is the light total reflection of S, behind this two bundles laser process PBS prism 6, carry out polarization and close bundle back output laser 16, its power doubles.

Close bundle module 1 for the folded battle array of second semiconductor laser polarization, place the folded battle array of the semiconductor laser collimating module 4 of PBS prism 6 front ends to launch soon, polarization state behind the lenticule collimation of slow axis is the laser 17 of λ 2 for the P wavelength, place the folded battle array collimation of the semiconductor laser polarization module 5 of PBS prism upper end to launch through soon, for the S wavelength laser 18 of λ 2 through rotatory polarization wave plate rear polarizer attitude again behind the lenticule collimation of slow axis, the light total transmissivity that 6 pairs of polarization states of PBS prism are P, to polarization state is the light total reflection of S, behind this two bundles laser process PBS prism 6, carry out polarization and close bundle back output laser 20

In like manner, place the folded battle array of the semiconductor laser collimating module 4 of PBS prism 6 front ends to launch soon for the 3rd semiconductor laser, polarization state behind the lenticule collimation of slow axis is the laser 21 of λ 3 for the P wavelength, place the folded battle array collimation of the semiconductor laser polarization module 5 of PBS prism upper end to launch through soon, for the S wavelength laser 22 of λ 2 through rotatory polarization wave plate rear polarizer attitude again behind the lenticule collimation of slow axis, the PBS prism is the light total transmissivity of P to polarization state, to polarization state is the light total reflection of S, behind this two bundles laser process PBS prism 6, carry out polarization and close bundle back output laser 23.

Laser 16 is totally reflected to optical filtering 12 through catoptron, laser 19 is totally reflected to optical filtering 12 through catoptron, optical filtering can realize to wavelength being the laser total transmissivity of λ 1, is the laser total reflection of λ 2 to wavelength, and laser 16 and laser 19 close bundle after filtration behind the light microscopic 12 and is laser 20; In like manner, arrive optical filtering 13 after the laser 23 process catoptron total reflections, optical filtering 13 can realize that wavelength is that λ 1 and wavelength are the laser total transmissivity of λ 2, to wavelength is the laser total reflection of λ 3, laser 20 and laser 23 close bundle after filtration behind the light microscopic 26 and are laser 24, and laser 24 is through condenser lenses 3 back output multiwavelength laser 25.

Based on above structure, the utility model proposes the preparation method of this multi-wavelength high-power semiconductor laser coupling device, specifically may further comprise the steps:

1) at first prepares semiconductor laser, fast axis collimation lenticule 8 and slow axis collimation microlens 9;

2) be the folded battle array 7 of the folded battle array of one dimension composition semiconductor laser with a plurality of semiconductor laser vertical pile, prepare the folded battle array 7 of polylith semiconductor laser;

3) make the folded battle array of a semiconductor laser collimating module 4 at the folded battle array of semiconductor laser 7 front ends installation fast axis collimation lenticule 8, slow axis collimation microlens 9;

4) at the folded battle array of second half conductor laser 7 front ends fast axis collimation lenticule 8, slow axis collimation microlens 9 and rotatory polarization wave plate 10 are installed and are made the folded battle array collimation of semiconductor laser polarization module 5;

5) the folded battle array of semiconductor laser collimating module 4 is placed PBS prism 6 front ends, place PBS prism 6 upper ends to make the folded battle array of semiconductor laser polarization the folded battle array collimation of semiconductor laser polarization module 5 and close bundle module 1;

6) a plurality of catoptrons 11 and filter mirror 12 are formed filtration module 2;

7) the folded battle array of a plurality of semiconductor lasers polarization is closed bundle module 1 and place filtration module 2 front ends, collector lens 3 is placed filtration module 2 rear ends, make the folded battle array of multi-wavelength high-power semiconductor laser coupled system.

In sum, the folded battle array of a multi-wavelength high-power semiconductor laser of the present utility model coupled system adopts the unique optical fiber coupling technique, makes coupled optical power density height, can realize multi-wavelength high-power output, simultaneously, can control the size and the shape of hot spot.

Claims

1. a multi-wavelength high-power semiconductor laser coupling device, is characterized in that, comprises one or more semiconductor laser polarization beam combining modules (1), filter module (2) and focusing lens (3), described semiconductor stack The polarization beam combining module (1) is placed at the front end of the filter module (2), and the focusing lens (3) is placed at the rear end of the filter module (2); the device is also provided with a temperature detector and a power detector; the semiconductor The laser polarization beam combining module (1) is also connected with a controller.

2. The multi-wavelength high-power semiconductor laser coupling device according to claim 1, characterized in that, the semiconductor laser polarization beam combining module (1) comprises a semiconductor laser stack collimation module (4), a semiconductor laser stack collimator Straight polarization module (5), PBS prism (6);

3. The multi-wavelength high-power semiconductor laser coupling device according to claim 2, characterized in that, the semiconductor laser stack collimation module (4) consists of sequentially arranged semiconductor laser stacks (7), fast axis collimation Composed of microlenses (8) and slow-axis collimating microlenses (9); the outgoing laser light of the semiconductor laser array (7) passes through the fast and slow-axis collimating microlenses (8, 9) sequentially, and emits a polarization state is the laser light with P wavelength λ.

4. The multi-wavelength high-power semiconductor laser coupling device according to claim 2, characterized in that, the semiconductor laser stack collimation polarization module (5) is composed of semiconductor laser stacks (7) arranged in sequence, fast axis collimator Composed of a straight microlens (8), a slow axis collimating microlens (9) and a wave plate (10); the outgoing laser light of the semiconductor laser stack (7) passes through the fast and slow axis collimating microlenses (8, 9) ) and the rotating polarizing waveplate (10), emit a laser with a polarization state of S and a wavelength of λ.

5. The multi-wavelength high-power semiconductor laser coupling device according to claim 3 or 4, characterized in that, the semiconductor laser stack (7) is composed of one or more semiconductor lasers.

6. multi-wavelength high-power semiconductor laser coupling device according to claim 2, is characterized in that, described semiconductor laser polarization beam combining module (1) has one or more, and described filtering module (2) comprises a plurality of all Reflecting mirrors and filter mirrors; the laser beams emitted by the polarization beam combining module (1) of the semiconductor laser are respectively processed by a plurality of total reflection mirrors and filter mirrors of the filter module (2), and then combined into a beam of outgoing laser light.

7. multi-wavelength high-power semiconductor laser coupling device according to claim 1 or 2, is characterized in that, described focusing lens (3) is made of one or more convex-concave spherical lens, biconvex lens, biconcave lens or curved surface- composed of flat lenses.