CN201877427U - Integrated high-power LED (light-emitting diode) - Google Patents
Integrated high-power LED (light-emitting diode) Download PDFInfo
- Publication number
- CN201877427U CN201877427U CN2010206459066U CN201020645906U CN201877427U CN 201877427 U CN201877427 U CN 201877427U CN 2010206459066 U CN2010206459066 U CN 2010206459066U CN 201020645906 U CN201020645906 U CN 201020645906U CN 201877427 U CN201877427 U CN 201877427U
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- Prior art keywords
- led
- light
- leds
- aluminium substrate
- aluminium base
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004411 aluminium Substances 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000001398 aluminium Chemical class 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 241000220317 Rosa Species 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The utility model relates to an integrated high-power LED (light-emitting diode), comprising an aluminium substrate and a plurality of LEDs, wherein the aluminium substrate is covered with an insulating layer; the LEDs are arranged on the aluminium substrate and are connected in sequence by conductive bars arranged on the insulating layer so as to form a series circuit; the number of the LEDs is an even number, i.e. 2N; the LEDs are arranged in two rows and N lines; two conductive bars at one side of the aluminium substrate are respectively a positive electrode and a negative electrode of input voltage; and silver paste is filled arranged between a light-emitting wafer and the aluminium substrate of the LED. In the integrated high-power LED, since only highly conductive silver paste is arranged between the light-emitting wafer and the aluminium substrate, the number of dielectric layers is greatly decreased, and the path from the light-emitting wafer and a radiator is shortened, so that the heat-conducting effect is improved. When a plurality of high-power LEDs are connected to form a higher-power light source, the temperature in the device is greatly reduced, so that the light-emitting efficiency is improved and the service life is prolonged.
Description
Technical field
The utility model relates to a kind of great power LED, and the temperature that relates in particular to a kind of effective minimizing device inside rises, improves the integrated form great power LED of luminous efficiency.
Background technology
Because the electric energy of power-type LED 80% or more be converted into heat energy, have only 20% electric energy to be converted into luminous energy, so the great power LED device generates heat easily, it is very important therefore dispelling the heat.Present single great power LED between the radiating subassembly, generally has elargol, heat sink, scolding tin, aluminium base and heat-conducting cream at its luminescent wafer successively, has 5 media, so heat conductivility is relatively poor.And a plurality of great power LEDs are when connecting to form a more powerful light source, and easier to cause the radiating element temperature to rise very fast, finally influence the light efficiency and the life-span of LED device.
Summary of the invention
The utility model mainly solve original power-type LED at its luminescent wafer between the radiating subassembly, have 5 media, heat conductivility is relatively poor, and a plurality of great power LEDs are when connecting to form a more powerful light source, the easier radiating element temperature that causes rises comparatively fast, finally influences the light efficiency of LED device and the technical problem in life-span; Provide a kind of luminescent wafer of power-type LED that reduces to the medium number of plies between the radiating element, shorten luminescent wafer to the path between the radiating element, thereby improve heat-conducting effect, the temperature that reduces device inside rises, improve luminous efficiency, the integrated form great power LED that increases the service life.
Above-mentioned technical problem of the present utility model is mainly solved by following technical proposals: the utility model comprises that one is coated with the aluminium base of a layer insulating and is located at a plurality of LED on this aluminium base, a plurality of LED link to each other by the bus of being located on the described insulating barrier, are provided with elargol between the luminescent wafer of described LED and the described aluminium base.The luminescent wafer of LED only links to each other with aluminium base by elargol, aluminium base itself is exactly a reasonable radiating subassembly, the luminescent wafer that has reduced LED shortens luminescent wafer to the path between the radiating element to the medium number of plies between the radiating element, improves heat-conducting effect.When a plurality of great power LEDs connected to form a more powerful light source, the temperature that has significantly reduced device inside rose, and improves luminous efficiency, increases the service life.
As preferably, described a plurality of LED link to each other successively by bus and constitute series circuit.Effectively improve luminous efficiency.
As preferably, the number of described LED is even number 2N, and even number LED is two row N row and arranges, and is respectively the positive and negative electrode of input voltage at two buss of described aluminium base one side.Easy to connect, it is neat to arrange.
As preferably, described aluminium base is an one flat plate.The monoblock aluminium base is the plane, and it is plane that the place of fixed L ED also is, and further guarantees heat-conducting effect, and makes also more convenient.
The beneficial effects of the utility model are: by between the luminescent wafer of LED and aluminium base elargol only being set, significantly reduced the medium number of plies, shortened luminescent wafer to the path between the radiating element, thereby improved heat-conducting effect.When a plurality of great power LEDs connected to form a more powerful light source, the temperature that has significantly reduced device inside rose, and improves luminous efficiency, increases the service life.
Description of drawings
Fig. 1 is a kind of plan structure schematic diagram of the present utility model.
Fig. 2 is a kind of main TV structure schematic diagram of the present utility model.
Fig. 3 is the luminescent wafer of LED in the utility model and a kind of syndeton decomposing schematic representation between the aluminium base.
1. aluminium bases among the figure, 2.LED, 3. bus, 4. luminescent wafer, 5. elargol.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment 1: a kind of integrated form great power LED of present embodiment, as shown in Figure 1, comprise that one is coated with the aluminium base 1 of a layer insulating and is installed on 10 LED2 on this aluminium base 1, aluminium base 1 is a flat board that 5mm is thick, be coated with the bus that metallic copper is made on the insulating barrier, 10 LED2 link to each other successively by bus 3 and constitute series circuit, 10 LED are two rows, 5 row and arrange, the bus 3 that connects LED surrounds shaped as frame, is respectively the positive and negative electrode of input voltage at two buss of aluminium base 1 one sides.As Fig. 2, shown in Figure 3, between the luminescent wafer 4 of 10 LED and the aluminium base 1 elargol 5 only is installed.
The utility model has significantly reduced the medium number of plies by between the luminescent wafer of LED and aluminium base high heat conduction elargol only being set, and has shortened luminescent wafer to the path between the radiating element, thereby improves heat-conducting effect.When a plurality of great power LEDs connected to form a more powerful light source, the temperature that has significantly reduced device inside rose, and improves luminous efficiency, increases the service life.
Claims (4)
1. integrated form great power LED, it is characterized in that comprising that one is coated with the aluminium base (1) of a layer insulating and is located at a plurality of LED(2 on this aluminium base (1)), a plurality of LED(2) link to each other by the bus of being located on the described insulating barrier (3), be provided with elargol (5) between the luminescent wafer of described LED (4) and the described aluminium base (1).
2. a kind of integrated form great power LED according to claim 1 is characterized in that described a plurality of LED(2) linking to each other successively by described bus (3) constitutes series circuit.
3. a kind of integrated form great power LED according to claim 2, it is characterized in that described LED(2) number be even number 2N, even number LED is two row N row and arranges, and is respectively the positive and negative electrode of input voltage at two buss of described aluminium base (1) one side.
4. a kind of integrated form great power LED according to claim 1 and 2 is characterized in that described aluminium base (1) is an one flat plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206459066U CN201877427U (en) | 2010-12-08 | 2010-12-08 | Integrated high-power LED (light-emitting diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206459066U CN201877427U (en) | 2010-12-08 | 2010-12-08 | Integrated high-power LED (light-emitting diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201877427U true CN201877427U (en) | 2011-06-22 |
Family
ID=44165337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206459066U Expired - Fee Related CN201877427U (en) | 2010-12-08 | 2010-12-08 | Integrated high-power LED (light-emitting diode) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201877427U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102966860A (en) * | 2011-08-31 | 2013-03-13 | 奥斯兰姆有限公司 | LED (light-emitting diode) lamp and method for producing LED lamp |
-
2010
- 2010-12-08 CN CN2010206459066U patent/CN201877427U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102966860A (en) * | 2011-08-31 | 2013-03-13 | 奥斯兰姆有限公司 | LED (light-emitting diode) lamp and method for producing LED lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110622 Termination date: 20151208 |
|
| EXPY | Termination of patent right or utility model |